FR2973157B1 - Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe - Google Patents

Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe

Info

Publication number
FR2973157B1
FR2973157B1 FR1152496A FR1152496A FR2973157B1 FR 2973157 B1 FR2973157 B1 FR 2973157B1 FR 1152496 A FR1152496 A FR 1152496A FR 1152496 A FR1152496 A FR 1152496A FR 2973157 B1 FR2973157 B1 FR 2973157B1
Authority
FR
France
Prior art keywords
strained material
partially relaxed
producing isolates
relaxed strained
isolates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1152496A
Other languages
English (en)
Other versions
FR2973157A1 (fr
Inventor
Romain Boulet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1152496A priority Critical patent/FR2973157B1/fr
Priority to CN201210074073.6A priority patent/CN102693902B/zh
Priority to US13/429,000 priority patent/US8642443B2/en
Publication of FR2973157A1 publication Critical patent/FR2973157A1/fr
Application granted granted Critical
Publication of FR2973157B1 publication Critical patent/FR2973157B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
FR1152496A 2011-03-25 2011-03-25 Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe Active FR2973157B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1152496A FR2973157B1 (fr) 2011-03-25 2011-03-25 Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe
CN201210074073.6A CN102693902B (zh) 2011-03-25 2012-03-20 实现至少部分松弛的应变材料的岛状物的方法
US13/429,000 US8642443B2 (en) 2011-03-25 2012-03-23 Process for the realization of islands of at least partially relaxed strained material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152496A FR2973157B1 (fr) 2011-03-25 2011-03-25 Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe

Publications (2)

Publication Number Publication Date
FR2973157A1 FR2973157A1 (fr) 2012-09-28
FR2973157B1 true FR2973157B1 (fr) 2014-03-14

Family

ID=44119823

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152496A Active FR2973157B1 (fr) 2011-03-25 2011-03-25 Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe

Country Status (3)

Country Link
US (1) US8642443B2 (fr)
CN (1) CN102693902B (fr)
FR (1) FR2973157B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3063571B1 (fr) 2017-03-01 2021-04-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat donneur pour la formation de dispositifs optoelectroniques, collection de substrats issus de ce procede
FR3064820B1 (fr) * 2017-03-31 2019-11-29 Soitec Procede d'ajustement de l'etat de contrainte d'un film piezoelectrique
FR3079658B1 (fr) * 2018-03-28 2021-12-17 Soitec Silicon On Insulator Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques
CN108630777B (zh) * 2018-04-23 2019-11-12 华南师范大学 通过水解离进行太阳能制氢的混合装置及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177344B1 (en) * 1998-11-25 2001-01-23 Applied Materials, Inc. BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient
FR2855650B1 (fr) * 2003-05-30 2006-03-03 Soitec Silicon On Insulator Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat
TWI457984B (zh) * 2008-08-06 2014-10-21 Soitec Silicon On Insulator 應變層的鬆弛方法
EP2151852B1 (fr) * 2008-08-06 2020-01-15 Soitec Relâchement et transfert de couches tendues
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
ATE555494T1 (de) * 2009-02-19 2012-05-15 S O I Tec Silicon Relaxation und übertragung von verspannten materialschichten

Also Published As

Publication number Publication date
CN102693902B (zh) 2016-05-11
CN102693902A (zh) 2012-09-26
US20120241918A1 (en) 2012-09-27
US8642443B2 (en) 2014-02-04
FR2973157A1 (fr) 2012-09-28

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