FR2973157B1 - Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe - Google Patents
Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxeInfo
- Publication number
- FR2973157B1 FR2973157B1 FR1152496A FR1152496A FR2973157B1 FR 2973157 B1 FR2973157 B1 FR 2973157B1 FR 1152496 A FR1152496 A FR 1152496A FR 1152496 A FR1152496 A FR 1152496A FR 2973157 B1 FR2973157 B1 FR 2973157B1
- Authority
- FR
- France
- Prior art keywords
- strained material
- partially relaxed
- producing isolates
- relaxed strained
- isolates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1152496A FR2973157B1 (fr) | 2011-03-25 | 2011-03-25 | Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe |
CN201210074073.6A CN102693902B (zh) | 2011-03-25 | 2012-03-20 | 实现至少部分松弛的应变材料的岛状物的方法 |
US13/429,000 US8642443B2 (en) | 2011-03-25 | 2012-03-23 | Process for the realization of islands of at least partially relaxed strained material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1152496A FR2973157B1 (fr) | 2011-03-25 | 2011-03-25 | Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2973157A1 FR2973157A1 (fr) | 2012-09-28 |
FR2973157B1 true FR2973157B1 (fr) | 2014-03-14 |
Family
ID=44119823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1152496A Active FR2973157B1 (fr) | 2011-03-25 | 2011-03-25 | Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe |
Country Status (3)
Country | Link |
---|---|
US (1) | US8642443B2 (fr) |
CN (1) | CN102693902B (fr) |
FR (1) | FR2973157B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3063571B1 (fr) | 2017-03-01 | 2021-04-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat donneur pour la formation de dispositifs optoelectroniques, collection de substrats issus de ce procede |
FR3064820B1 (fr) * | 2017-03-31 | 2019-11-29 | Soitec | Procede d'ajustement de l'etat de contrainte d'un film piezoelectrique |
FR3079658B1 (fr) * | 2018-03-28 | 2021-12-17 | Soitec Silicon On Insulator | Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques |
CN108630777B (zh) * | 2018-04-23 | 2019-11-12 | 华南师范大学 | 通过水解离进行太阳能制氢的混合装置及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6177344B1 (en) * | 1998-11-25 | 2001-01-23 | Applied Materials, Inc. | BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient |
FR2855650B1 (fr) * | 2003-05-30 | 2006-03-03 | Soitec Silicon On Insulator | Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat |
TWI457984B (zh) * | 2008-08-06 | 2014-10-21 | Soitec Silicon On Insulator | 應變層的鬆弛方法 |
EP2151852B1 (fr) * | 2008-08-06 | 2020-01-15 | Soitec | Relâchement et transfert de couches tendues |
FR2936903B1 (fr) * | 2008-10-07 | 2011-01-14 | Soitec Silicon On Insulator | Relaxation d'une couche de materiau contraint avec application d'un raidisseur |
ATE555494T1 (de) * | 2009-02-19 | 2012-05-15 | S O I Tec Silicon | Relaxation und übertragung von verspannten materialschichten |
-
2011
- 2011-03-25 FR FR1152496A patent/FR2973157B1/fr active Active
-
2012
- 2012-03-20 CN CN201210074073.6A patent/CN102693902B/zh active Active
- 2012-03-23 US US13/429,000 patent/US8642443B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102693902B (zh) | 2016-05-11 |
CN102693902A (zh) | 2012-09-26 |
US20120241918A1 (en) | 2012-09-27 |
US8642443B2 (en) | 2014-02-04 |
FR2973157A1 (fr) | 2012-09-28 |
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Legal Events
Date | Code | Title | Description |
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CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20130107 |
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RM | Correction of a material error |
Effective date: 20130107 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 7 |
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PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 10 |
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PLFP | Fee payment |
Year of fee payment: 11 |
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PLFP | Fee payment |
Year of fee payment: 12 |
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PLFP | Fee payment |
Year of fee payment: 13 |
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PLFP | Fee payment |
Year of fee payment: 14 |