KR101913174B1 - 물질에서 크랙을 형성하는 방법 - Google Patents

물질에서 크랙을 형성하는 방법 Download PDF

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KR101913174B1
KR101913174B1 KR1020137031564A KR20137031564A KR101913174B1 KR 101913174 B1 KR101913174 B1 KR 101913174B1 KR 1020137031564 A KR1020137031564 A KR 1020137031564A KR 20137031564 A KR20137031564 A KR 20137031564A KR 101913174 B1 KR101913174 B1 KR 101913174B1
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donor substrate
lithium
substrate
implantation
hydrogen
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KR20140040725A (ko
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오렐리 토쟁
프레데릭 마젱
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꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
KR1020137031564A 2011-05-02 2012-04-27 물질에서 크랙을 형성하는 방법 Active KR101913174B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1153737 2011-05-02
FR1153737A FR2974944B1 (fr) 2011-05-02 2011-05-02 Procédé de formation d'une fracture dans un matériau
PCT/EP2012/057713 WO2012150184A1 (fr) 2011-05-02 2012-04-27 Procede de formation d'une fracture dans un materiau

Publications (2)

Publication Number Publication Date
KR20140040725A KR20140040725A (ko) 2014-04-03
KR101913174B1 true KR101913174B1 (ko) 2018-10-30

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KR1020137031564A Active KR101913174B1 (ko) 2011-05-02 2012-04-27 물질에서 크랙을 형성하는 방법

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Country Link
US (1) US9105688B2 (enExample)
EP (1) EP2705529B1 (enExample)
JP (1) JP6019106B2 (enExample)
KR (1) KR101913174B1 (enExample)
CN (1) CN103534800B (enExample)
FR (1) FR2974944B1 (enExample)
SG (1) SG194748A1 (enExample)
WO (1) WO2012150184A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015112308A1 (en) 2014-01-23 2015-07-30 Sunedison Semiconductor Limited High resistivity soi wafers and a method of manufacturing thereof
WO2015195314A1 (en) * 2014-06-19 2015-12-23 Gtat Corporation Enhancing the emissivity of a donor substrate for ion implantation
FR3043248B1 (fr) * 2015-10-30 2017-12-15 Commissariat Energie Atomique Procede d'elimination de defauts dans un film semiconducteur comprenant la formation d'une couche de piegeage d'hydrogene
JP6632462B2 (ja) * 2016-04-28 2020-01-22 信越化学工業株式会社 複合ウェーハの製造方法
FR3079658B1 (fr) * 2018-03-28 2021-12-17 Soitec Silicon On Insulator Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques
FR3091000B1 (fr) * 2018-12-24 2020-12-04 Soitec Silicon On Insulator Procede de fabrication d’un substrat pour un capteur d’image de type face avant
FR3091620B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
FR3091619B1 (fr) 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de guérison avant transfert d’une couche semi-conductrice
FR3094573B1 (fr) * 2019-03-29 2021-08-13 Soitec Silicon On Insulator Procede de preparation d’une couche mince de materiau ferroelectrique
CN110341291B (zh) * 2019-08-16 2021-04-06 江阴市合助机械科技有限公司 一种复合板材自动剥离方法
CN113311309B (zh) * 2021-07-30 2021-10-12 度亘激光技术（苏州）有限公司 半导体结构的覆盖层剥除方法及半导体结构失效分析方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
JP2007184581A (ja) * 2005-12-19 2007-07-19 Corning Inc 改善されたイオン注入プロセスを用いて作成されたガラス絶縁体上半導体
US20090061594A1 (en) 2006-03-29 2009-03-05 Aurelie Tauzin Method of detaching a thin film by melting precipitates

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE504916C2 (sv) 1995-01-18 1997-05-26 Ericsson Telefon Ab L M Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
FR2847076B1 (fr) * 2002-11-07 2005-02-18 Soitec Silicon On Insulator Procede de detachement d'une couche mince a temperature moderee apres co-implantation
US20050181210A1 (en) * 2004-02-13 2005-08-18 Doering Patrick J. Diamond structure separation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
JP2007184581A (ja) * 2005-12-19 2007-07-19 Corning Inc 改善されたイオン注入プロセスを用いて作成されたガラス絶縁体上半導体
US20090061594A1 (en) 2006-03-29 2009-03-05 Aurelie Tauzin Method of detaching a thin film by melting precipitates

Also Published As

Publication number Publication date
SG194748A1 (en) 2013-12-30
FR2974944A1 (fr) 2012-11-09
JP6019106B2 (ja) 2016-11-02
US9105688B2 (en) 2015-08-11
EP2705529B1 (fr) 2015-03-11
FR2974944B1 (fr) 2013-06-14
EP2705529A1 (fr) 2014-03-12
WO2012150184A1 (fr) 2012-11-08
US20140113434A1 (en) 2014-04-24
KR20140040725A (ko) 2014-04-03
CN103534800A (zh) 2014-01-22
CN103534800B (zh) 2016-12-07
JP2014518010A (ja) 2014-07-24

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