WO2012105136A1 - Al基合金スパッタリングターゲット、及びCu基合金スパッタリングターゲット - Google Patents
Al基合金スパッタリングターゲット、及びCu基合金スパッタリングターゲット Download PDFInfo
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- WO2012105136A1 WO2012105136A1 PCT/JP2011/079460 JP2011079460W WO2012105136A1 WO 2012105136 A1 WO2012105136 A1 WO 2012105136A1 JP 2011079460 W JP2011079460 W JP 2011079460W WO 2012105136 A1 WO2012105136 A1 WO 2012105136A1
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- sputtering
- sputtering target
- based alloy
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 119
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 106
- 239000000956 alloy Substances 0.000 title claims abstract description 106
- 238000004544 sputter deposition Methods 0.000 claims abstract description 100
- 239000013078 crystal Substances 0.000 claims abstract description 85
- 239000012535 impurity Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000002003 electron diffraction Methods 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000000151 deposition Methods 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 69
- 239000010949 copper Substances 0.000 description 57
- 238000005096 rolling process Methods 0.000 description 42
- 230000015572 biosynthetic process Effects 0.000 description 41
- 238000000034 method Methods 0.000 description 31
- 238000005098 hot rolling Methods 0.000 description 30
- 239000010409 thin film Substances 0.000 description 30
- 230000009467 reduction Effects 0.000 description 26
- 239000002344 surface layer Substances 0.000 description 24
- 238000000137 annealing Methods 0.000 description 21
- 238000009826 distribution Methods 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 238000005097 cold rolling Methods 0.000 description 9
- 238000002791 soaking Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000005266 casting Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000003754 machining Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910018191 Al—Fe—Si Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Definitions
- the present invention relates to an Al-based alloy sputtering target and a Cu-based alloy sputtering target. Specifically, the present invention relates to an Al-based alloy sputtering target and a Cu-based alloy sputtering target in which the crystal orientation in the normal direction of the sputtering surface is controlled.
- Al-based alloys and Cu-based alloys have a low electrical resistivity and are easy to process. For this reason, liquid crystal displays (LCD), plasma display panels (PDP), electroluminescent displays (ELD), field emission displays (FED) Etc.) and is widely used in the field of flat panel displays (FPD).
- LCD liquid crystal displays
- PDP plasma display panels
- ELD electroluminescent displays
- FED field emission displays
- Al-based alloys and Cu-based alloys are used for materials such as wiring films, electrode films, and reflective electrode films.
- an active matrix type liquid crystal display includes a thin film transistor (TFT) which is a switching element, a pixel electrode composed of a conductive oxide film, and a TFT substrate having wiring including scanning lines and signal lines.
- TFT thin film transistor
- the scanning line and the signal line are electrically connected to the pixel electrode.
- various Al-based alloy thin films such as pure Al thin films and Al—Nd alloys, and various Cu-based alloy thin films such as pure Cu thin films and Cu—Mn alloys are used as wiring materials constituting scanning lines and signal lines. ing.
- a sputtering method using a sputtering target is generally employed for forming an Al-based alloy thin film or a Cu-based alloy thin film.
- the sputtering method first, plasma discharge is formed between a substrate and a sputtering target (target material) made of a material having the same composition as the thin film material. Then, a gas ionized by plasma discharge is collided with the target material to knock out atoms of the target material and deposit them on a substrate to form a thin film.
- the sputtering method has an advantage that a thin film having the same composition as the target material can be formed.
- an Al-based alloy thin film or a Cu-based alloy thin film formed by sputtering can dissolve an alloy element that does not dissolve in an equilibrium state, and exhibits excellent performance as a thin film. Therefore, it is an industrially effective thin film preparation method, and the development of a sputtering target as a raw material is being promoted.
- Patent Documents 1 to 4 have been proposed for the purpose of preventing the occurrence of defective sputtering.
- Patent Documents 1 to 3 are all based on the viewpoint that the cause of splash is caused by fine voids in the target material structure.
- Control the dispersion state of compound particles of Al and rare earth elements in the Al matrix (Patent Document 1), control the dispersion state of compounds of Al and transition elements in the Al matrix (Patent Document 2), target The occurrence of splash is prevented by controlling the dispersion state of the intermetallic compound of the additive element and Al (Patent Document 3).
- Patent Document 4 discloses a technique for suppressing the occurrence of surface defects caused by machining and reducing arcing generated during sputtering by adjusting the hardness of the sputter surface and then performing finish machining. Has been.
- Patent Document 5 describes a method of performing sputtering at a high film formation rate by controlling the ratio of crystal orientation on the sputtering surface of the sputtering target.
- the content ratio of ⁇ 111> crystal orientation when the sputter surface is measured by the X-ray diffraction method is increased to 20% or more, the ratio of the target material flying in the direction perpendicular to the sputter surface increases. It is described that the thin film formation rate increases.
- the results using an Al-based alloy target containing 1% by mass of Si and 0.5% by mass of Cu are described.
- Patent Document 6 does not directly describe the film formation rate.
- the content ratio of ⁇ 200> crystal orientation should be as high as 20% or more.
- the results using an Al-based alloy target containing 1% by mass of Si and 0.5% by mass of Cu are described.
- Patent Document 7 is directed to an Al—Ni—rare earth element alloy sputtering target and proposes that arcing can be sufficiently suppressed by controlling the area ratio of a specific crystal orientation.
- JP-A-10-147860 Japanese Patent Laid-Open No. 10-199830 Japanese Patent Laid-Open No. 11-293454 JP 2001-279433 A JP-A-6-128737 JP-A-6-81141 JP 2008-127623 A
- sputtering failure such as splash lowers the yield and productivity of FPD, and causes a serious problem particularly when it is desired to increase the deposition rate during sputtering.
- Various techniques have been proposed so far for improving the sputtering failure and increasing the film forming speed, but further improvements are required.
- pre-sputtering removal of impurities adhering to the target surface (pre-sputtering) is performed, and it is confirmed that a thin film having a desired component composition is formed. Has begun production. However, in order to stabilize the film composition, it is necessary to perform pre-sputtering for a long time, which greatly affects the production cost of the thin film. Therefore, a sputtering target having a shorter pre-sputtering time is required.
- the present invention has been made in view of the above circumstances, and its purpose is at the time of pre-sputtering when an Al-based alloy sputtering target or Cu-based alloy sputtering target is used, and at the time of subsequent sputtering to a substrate or the like. It is an object of the present invention to provide a technique capable of increasing the film forming speed and suppressing sputtering defects such as splash.
- the sputtering target of the present invention that has solved the above problems is an Al-based alloy or Cu-based alloy sputtering target, and is a sputtering surface at a depth within 1 mm from the outermost surface of the sputtering target by backscattered electron diffraction imaging.
- a sputtering surface normal at a depth of (1/4) ⁇ t (plate thickness) portion from the surface of the sputtering target by backscattered electron diffraction imaging Observe the crystal orientations ⁇ 001>, ⁇ 011>, ⁇ 111>, ⁇ 112>, and ⁇ 012> in the direction, ⁇ 001> ⁇ 15 °, ⁇ 011> ⁇ 15 °, ⁇ 111> ⁇ 15 °
- the total area ratio of ⁇ 112> ⁇ 15 ° and ⁇ 012> ⁇ 15 ° is defined as a Q value, the following (3) and / or (4) requirements are satisfied.
- the Al-based alloy contains 0.0001 to 1.0% by mass of Fe and 0.0001 to 1.0% by mass of Si.
- the Al-based alloy further contains 0.0001 to 0.5% by mass of at least one selected from the group consisting of Mn, Cr, Mo, Nb, Ti, and Ta.
- the Cu-based alloy contains 0.00001 to 0.04% by mass of oxygen, 0.00001 to 0.003% by mass of hydrogen, and 0.01% by mass or less of inevitable impurities. It is an aspect.
- the Al-based alloy sputtering target and the Cu-based alloy sputtering target of the present invention have a high film forming speed because the crystal orientation in the normal direction of the sputtering surface near the surface of the sputtering target consumed in the pre-sputtering is appropriately controlled. Is obtained. Further, by making the crystal orientation inside the sputtering target different from the vicinity of the surface, a high film formation rate can be obtained even during sputtering. Therefore, according to the present invention, it is not necessary to increase the sputtering power as in the prior art in the pre-sputtering step, and the productivity is remarkably improved. Furthermore, according to the present invention, it is possible to increase the film formation rate in sputtering on a substrate or the like performed after pre-sputtering, and to further suppress the occurrence of sputtering failure (splash).
- FIG. 1 shows a face-centered cubic lattice with typical crystal orientations.
- the inventors of the present invention have made an Al-based alloy sputtering target used for forming an Al-based alloy thin film useful as a wiring film material and a Cu-based alloy sputtering target used for forming a Cu-based alloy thin film, particularly during pre-sputtering and sputtering.
- a technique capable of suppressing the occurrence of defective sputtering (splash) while increasing the film formation speed of the film the inventors have intensively studied.
- the inventors have found that the intended purpose can be achieved by appropriately controlling the crystal orientation in the normal direction of the sputtering surface of the Al-based alloy sputtering target and the Cu-based alloy sputtering target, thereby completing the present invention.
- “splash generation can be suppressed (reduced)” means that the occurrence of splash is generated when sputtering is performed by setting the sputtering power according to the film formation speed under the conditions described in the examples described later.
- the number average value of three portions of the surface layer portion of the sputtering target, (1/4) ⁇ t portion, (1/2) ⁇ t portion) is 21 pieces / cm 2 or less (preferably 11 pieces / cm 2 or less, More preferably, it is 7 pieces / cm 2 or less.
- the techniques of Patent Documents 2 to 7 that do not evaluate the occurrence of splash in the thickness direction. And the evaluation criteria are different.
- the Al-based alloy sputtering target is a sputtering target mainly composed of Al containing pure Al and an alloy element.
- the present invention is suitable for an Al—Fe—Si based alloy sputtering target containing Fe and Si as alloy components.
- the Cu-based alloy sputtering target is a sputtering target mainly composed of pure Cu, and is oxygen-free copper (alloy number C1020), tough pitch copper (alloy number C1100), phosphorous deoxidized copper (specified by JIS H 3100). Alloy numbers C1201, C1220, C1221) are targeted.
- the present invention is suitable for a Cu-based alloy sputtering target containing oxygen and hydrogen and further containing chemical components other than oxygen and hydrogen described in JIS H 3100 as inevitable impurities.
- the crystal orientation characterizing the Al-based alloy sputtering target (and Cu-based alloy sputtering target) of the present invention will be described with reference to FIG.
- the crystal structure of Al and Cu is a face-centered cubic lattice (FCC: Face-centered-cubic lattice).
- FCC Face-centered-cubic lattice
- the component-based Al-based alloy sputtering target and Cu-based alloy sputtering target defined in the present invention have the same behavior during sputtering, they will be described together. Therefore, in this specification, unless otherwise specified, the description of an Al-based alloy can be appropriately replaced with a Cu-based alloy, and may be expressed as “Al (Cu) -based alloy”.
- FIG. 1 shows a typical crystal structure and crystal orientation of a face-centered cubic lattice.
- a general method is used to display the crystal orientation.
- [001], [010], and [100] are equivalent crystal orientations, and these three orientations are collectively expressed as ⁇ 001>.
- Al (Cu) has a crystal structure of a face-centered cubic lattice.
- the direction with the highest atom number density (closest direction) is ⁇ 011>, followed by ⁇ 001>, ⁇ 112>, ⁇ 111>, ⁇ 012>.
- atoms constituting the sputtering target released into the space from the surface of the sputtering target are not necessarily deposited only on the opposing substrate, and may adhere to the surrounding sputtering target surface to form a deposit. .
- This adhesion and deposition is likely to occur at the level difference between the crystal grains, and the deposit becomes a starting point of the splash, and the splash is likely to occur.
- the efficiency of the sputtering process and the yield of the sputtering target are significantly reduced.
- the structure of the Al (Cu) -based alloy sputtering target has a non-uniform crystal orientation distribution in the sputtering plane and in the sputtering target plate thickness direction, it is inherent to the sputtering target. Since the film formation rate is not uniform, it has been found that splash is likely to occur at a portion where the film formation rate specific to the sputtering target is high. On the other hand, it has been found that there is a possibility that the film forming speed is lowered at a site where the film forming speed inherent to the sputtering target is slow, and the productivity is remarkably lowered.
- the present inventors analyzed the relationship between the surface properties of the sputtering target after sputtering (after use) and the crystal grain orientation by using a scanning electron microscope (SEM: Scanning Electron Microscope) or backscattered electron diffraction imaging (EBSP: Electron Backscatter Diffraction). Pattern) was directly observed and examined in detail.
- SEM Scanning Electron Microscope
- EBSP Electron Backscatter Diffraction
- the crystal orientation of the Al (Cu) -based alloy was measured using the EBSP method as follows.
- the surface layer portion (1 mm from the outermost surface) and (1/4) ⁇ t portion in the thickness direction of the sputtering target are measured surfaces ( A sample for EBSP measurement is obtained by cutting so that a surface parallel to the sputtering surface can have an area of 10 mm or more in length and 10 mm or more in width.
- polishing with emery paper or colloidal silica suspension is performed.
- electropolishing with a mixed solution of perchloric acid and ethyl alcohol is performed.
- the crystal orientation of the said sputtering target was measured using the following apparatus and software.
- Apparatus Backscattered electron diffraction image apparatus manufactured by EDAX / TSL “Orientation Imaging MicroscopyTM (OIMTM)” Measurement software: OIM Data Collection ver. 5 Analysis software: OIM Analysis ver. 5 Measurement area: area 1200 ⁇ m ⁇ 1200 ⁇ m ⁇ depth 50 nm step size: 8 ⁇ m Number of fields of view: 3 orientations in the same measurement plane Crystal orientation difference during analysis: ⁇ 15 °
- crystal orientation difference at the time of analysis: ⁇ 15 ° means, for example, in the analysis of ⁇ 001> crystal orientation, if it is within the range of ⁇ 001> ⁇ 15 °, it is regarded as an allowable range, and ⁇ 001> crystal This means that it is determined to be a bearing. This is because, if it is within the above-mentioned allowable range, it is considered that the same orientation may be considered in terms of crystallography. As shown below, in the present invention, each crystal orientation is calculated within an allowable range of ⁇ 15 °. Then, the Partition Fraction with the crystal orientation ⁇ uvw> ⁇ 15 ° was determined as the area ratio.
- the crystal orientation ⁇ 001>, ⁇ 011>, ⁇ 111 in the normal direction of the sputtering surface at a depth within 1 mm from the outermost surface of the sputtering target. >, ⁇ 112>, and ⁇ 012> are observed by the EBSP method.
- the total area ratio of ⁇ 001> ⁇ 15 °, ⁇ 011> ⁇ 15 °, ⁇ 111> ⁇ 15 °, ⁇ 112> ⁇ 15 °, and ⁇ 012> ⁇ 15 ° was defined as P value.
- These five crystal orientations are crystal orientations existing in the normal direction of the sputtering target surface that affects the film formation rate.
- the measurement position is set to a position within 1 mm in the depth direction (target thickness direction) from the outermost surface of the sputtering target because this region affects the sputtering property (easy to be sputtered) during pre-sputtering. It is. That is, in order to improve the sputtering property in this region, it is effective to control the crystal orientation at a depth within 1 mm from the outermost surface of sputtering. In the present invention, it is only necessary to satisfy at least one of the following (1) and (2), whereby desired characteristics can be obtained.
- the area ratio PA of ⁇ 011> ⁇ 15 ° with respect to the P value is set to 40% or less, preferably 20% or less (PA is the area ratio on the same plane as the P value measurement surface).
- the lower limit is not particularly limited and may include 0%, but the maximum ratio that can be controlled in actual operation is approximately 1%.
- the total area ratio PB of ⁇ 001> ⁇ 15 ° and ⁇ 111> ⁇ 15 ° with respect to the P value is 20% or more, preferably 30% or more (PB is the area ratio on the same plane as the P value measurement surface) Is).
- the upper limit is not particularly limited, and may include 100%, but the maximum ratio that can be controlled in actual operation is about 95%.
- the sputtering target When sputtering progresses and the sputtering target is consumed in excess of 1 mm from the outermost surface before use, a part of the sputtering surface may be inclined, or irregularities having a relatively large curved surface may occur. This is because the sputtering target is not necessarily consumed uniformly and the consumption rate is locally different. However, when the surface of the sputtering target is uneven, the film formation speed is affected by the crystal orientation different from the crystal orientation at a depth within 1 mm from the outermost surface of the sputtering target as described above. Moreover, the surface properties of the sputtering target during sputtering differ for each sputtering. For this reason, the specific crystal orientation does not necessarily become a crystal orientation superior in improving the film formation rate. Therefore, the crystal orientation inside the sputtering target (in the depth direction exceeding 1 mm from the outermost surface) is desirably as random as possible.
- the ratio (PA / QA) is preferably 0.8 or less, more preferably 0.7 or less, and still more preferably 0.6 or less.
- the lower limit is not particularly limited, if the ratio of the area ratio QA of ⁇ 011> of (1/4) ⁇ t part is excessively increased, as described above, ⁇ 011> itself is a crystal orientation that is difficult to be sputtered, and the film formation rate In order to reduce the above, it is preferably 0.1 or more, more preferably 0.2 or more.
- the total area ratio PB of ⁇ 111> and ⁇ 001> at a depth of 1 mm or less from the outermost surface of the sputtering target is increased, so that ⁇ 111> and ⁇ 001> of the inside of the sputtering target. It is desirable to reduce the total area ratio QB. Therefore, as defined in (4) above, the total area ratio PB of ⁇ 111> and ⁇ 001> at a depth within 1 mm from the outermost surface of the sputtering target, and ⁇ 111> in the (1/4) ⁇ t part. And the ratio (PB / QB) of the total area ratio QB of ⁇ 001> is preferably 1.2 or more, more preferably 1.5 or more, and further preferably 2.0 or more.
- the upper limit is not particularly limited, but if the total area ratio QB of ⁇ 111> and ⁇ 001> inside is reduced too much, the crystal orientation that is harder to be sputtered than ⁇ 111> and ⁇ 001> increases, and the film formation rate decreases. Therefore, it is preferably 10.0 or less, more preferably 8.0 or less.
- the area ratio of the crystal orientation other than the above is not particularly limited. Experiments have confirmed that it is sufficient to define the crystal orientation as described above in order to improve the film formation rate and reduce the sputtering failure, and it is almost unnecessary to consider the influence of other crystal orientations.
- an Al—Fe—Si based alloy is suitable as the Al based alloy.
- An Al-based alloy sputtering target containing Fe and Si is desirable because of its low electrical resistivity and excellent hillock resistance and dry etching characteristics required when forming a wiring film.
- the content of Fe is preferably 0.0001% by mass or more and 1.0% by mass or less. If the amount is less than 0.0001% by mass, the above characteristics (hillock resistance, dry etching property) are not effective. On the other hand, if it exceeds 1.0% by mass, it is difficult to reduce the electrical resistivity.
- the Fe content is more preferably 0.0005 mass% or more and 0.5 mass% or less, and still more preferably 0.001 mass% or more and 0.1 mass% or less.
- Si is an element desirable for further improving the effect of adding Fe.
- an Al-based alloy in which Si is added in combination with Fe can achieve a low electrical resistivity.
- the content of Si is preferably 0.0001% by mass or more and 1.0% by mass or less. If it is less than 0.0001% by mass, the effect of addition is low. On the other hand, when it exceeds 1.0 mass%, it becomes difficult to reduce the electrical resistivity.
- a more preferable content is 0.001% by mass or more and 0.5% by mass or less.
- an Al-based alloy (preferably an Al-Fe-Si-based alloy) further containing at least one selected from the group consisting of Mn, Cr, Mo, Nb, Ti, and Ta is also targeted.
- These elements are effective elements for improving the heat resistance of the Al-based alloy film formed by using the Al-based alloy sputtering target of the present invention, and are also useful for improving the film formation rate.
- a commonly used method can be adopted as a method for adding the alloy element.
- a typical example is addition to a molten metal as a crystal grain refining agent.
- the composition of the crystal grain refining agent is not particularly limited as long as a desired Al-based alloy sputtering target can be obtained, and a commercially available product can also be used.
- the components of the Al-based alloy used in the present invention preferably contain an alloy element, and the balance is Al and inevitable impurities. More preferably, it is Fe and Si, and the balance is Al and inevitable impurities. More preferably, the balance Al and unavoidable impurities include at least one selected from the group consisting of Mn, Cr, Mo, Nb, Ti, and Ta. More preferably, it is at least one selected from the group consisting of Mn, Cr, Mo, Nb, Ti, and Ta, including Fe and Si, and the balance Al and inevitable impurities. Inevitable impurities include elements inevitably mixed in the manufacturing process, such as C, O, N, etc., and the content is preferably 0.001% by mass or less.
- a pure Cu sputtering target is suitable as the Cu-based alloy (meaning that the Cu-based alloy of the present invention includes pure Cu).
- a pure Cu sputtering target is desirable because of its low electrical resistivity and excellent hillock resistance and dry etching characteristics required when forming a wiring film.
- Cu is oxidized to copper oxide.
- the oxygen content is preferably 0.04% by mass or less.
- a minimum is not limited, 0.00001 mass% or more which is an actual detection limit is preferable.
- the oxygen content is measured using an inert gas melting infrared absorption method.
- an Al (Cu) -based alloy sputtering target based on the melt casting method.
- soaking is performed in the steps of melt casting ⁇ (soaking as necessary) ⁇ hot rolling ⁇ annealing.
- Conditions soaking temperature, soaking time, etc.
- hot rolling conditions eg, rolling start temperature, rolling end temperature, 1-pass maximum rolling reduction, total rolling reduction, etc.
- annealing conditions annealing temperature, annealing time, etc.
- the crystal orientation distribution, crystal grain size control means, and hardness adjustment means that can be applied differ depending on the type of Al (Cu) -based alloy. Therefore, according to the type of the Al (Cu) based alloy, for example, the above means may be used alone or in combination to adopt an appropriate means.
- the preferable manufacturing method of the said Al (Cu) base alloy target of this invention is demonstrated in detail for every process.
- melt casting The melt casting process is not particularly limited, and a process usually used for the production of a sputtering target may be adopted as appropriate, and an Al (Cu) based alloy ingot may be formed.
- typical casting methods include DC (semi-continuous) casting, thin plate continuous casting (double roll type, belt caster type, propel type, block caster type, etc.).
- hot rolling After performing the above-mentioned soaking as required, hot rolling is performed.
- the relationship between the two is controlled so as to be defined by the above (1) to (4). That is, while controlling the crystal orientation distribution in the plane direction within a depth of 1 mm from the outermost surface of the sputtering target, the crystal orientation in the inside (region exceeding 1 mm in the depth direction from the outermost surface, particularly (1/4) ⁇ t portion). Control the distribution.
- the rolling conditions during hot rolling are appropriately controlled so that 1 to By introducing a shear strain in a region having a depth of 3 mm or less, ⁇ 111> and ⁇ 001> plane orientations are introduced as the shear texture to increase the area ratio PB, and it is easy to develop as a rolling texture ⁇
- the area ratio PA of 011> plane orientation can be reduced.
- a texture having a depth of more than 1 mm (preferably (1/4) ⁇ t part, the same applies hereinafter) from the target surface. Need to be further controlled.
- the total reduction ratio in the hot rolling process is appropriately controlled so that the area ratio PA in the ⁇ 011> plane orientation is actively reduced to a depth of more than 1 mm from the target surface.
- the area ratio QA of the ⁇ 011> plane orientation is relatively increased.
- the ⁇ 001> plane orientation in the vicinity of the target surface in which the total of the area ratio PB of the ⁇ 001> plane orientation and the ⁇ 111> plane orientation is positively increased, at a depth exceeding 1 mm from the target surface, the ⁇ 001> plane orientation The total of the area ratio QB of the ⁇ 111> plane orientation is relatively reduced.
- the textures of (1) to (4) are not determined only by the rolling conditions during hot rolling, but various other factors (for example, annealing after hot rolling and annealing after cold rolling) In order to obtain a desired texture, it is desirable to appropriately adjust the hot rolling conditions and the like.
- a preferable hot rolling start temperature in the case of an Al-based alloy is 250 ° C. or higher, more preferably 300 ° C. or higher, and even more preferably 350 ° C. or higher.
- a preferable hot rolling start temperature in the case of a Cu-based alloy is 300 ° C. or higher, more preferably 400 ° C. or higher, and still more preferably 500 ° C. or higher.
- the hot rolling start temperature is too high, the number of splashes may increase due to variations in the crystal orientation distribution in the normal direction of the sputtering surface.
- a preferable hot rolling start temperature is 600 ° C. or lower, more preferably 550 ° C. or lower, and further preferably 500 ° C. or lower.
- a preferable hot rolling start temperature in the case of a Cu-based alloy is 800 ° C. or lower, more preferably 750 ° C. or lower, and still more preferably 700 ° C. or lower.
- the desired texture is easier to obtain if the one-pass maximum rolling reduction during hot rolling is lower. However, the number of rolling passes during hot rolling is excessively increased, and the productivity is remarkably lowered.
- the one-pass maximum rolling reduction is preferably 5% or more, more preferably 10% or more, and still more preferably 15% or more. On the other hand, if the one-pass maximum rolling reduction is too high, it becomes difficult to introduce shear strain in the region of 1 mm near the surface, and the structure in the region having a depth within 1 mm from the outermost surface is not as intended. / Or (2) organization may not be obtained.
- a preferable one-pass maximum rolling reduction is 35% or less, more preferably 30% or less, still more preferably 25% or less, and still more preferably 20% or less.
- a preferable total rolling reduction is 40% or more, more preferably 50% or more, and still more preferably 70% or more.
- the total rolling reduction is 95% or less, more preferably 92% or less, and still more preferably 90% or less.
- Reduction ratio per pass (%) ⁇ (thickness before one pass of rolling) ⁇ (thickness after one pass of rolling) ⁇ / (thickness before one pass of rolling) ⁇ 100
- Total rolling reduction (%) ⁇ (Thickness before starting rolling) ⁇ (Thickness after finishing rolling) ⁇ / (Thickness before starting rolling) ⁇ 100
- the annealing temperature is not particularly limited, and annealing may not be performed. However, if the annealing temperature is too low, a desired crystal orientation may not be obtained or coarse crystal grains may remain without being refined if the above-described hot rolling or the like is not performed appropriately. . Therefore, when annealing is performed, it is preferably 150 ° C. or higher, more preferably 180 ° C. or higher, and further preferably 250 ° C. or higher. It is preferable to control the annealing time to about 1 to 10 hours.
- cold rolling ⁇ annealing Although the crystal orientation distribution of the sputtering target can be controlled by the above production method, cold rolling ⁇ annealing (second rolling and annealing) may be further performed thereafter. From the viewpoint of appropriately controlling the crystal orientation distribution and the crystal grain size, it is preferable to control the annealing conditions. For example, it is recommended to control the annealing temperature in the range of 150 to 250 ° C. and the annealing time in the range of 1 to 5 hours.
- the rolled surface layer is usually ground to a sputtering surface by grinding about 0.3 mm to 1.5 mm.
- the above-described structures (1) to (4) are the structures after the machining, and the control conditions described above are set assuming the machining.
- Example 1 Al-based alloys having various compositions shown in Table 1 were prepared, and the ingot was ingoted by a DC casting method. Thereafter, hot rolling and annealing were performed under the conditions shown in Table 1 to produce a rolled sheet. After the rolled plate was allowed to cool to room temperature, it was appropriately cold-rolled at the rolling reduction shown in Table 1. Then, it annealed suitably and produced the rolled sheet.
- machining rounding and lathe processing
- grinding was performed from one rolled plate to 0.5 mm from the surface layer portion in the thickness (t) direction of the rolled plate.
- An Al-based alloy sputtering target (size: diameter 4 inches ⁇ thickness 8 mm) having a thickness adjusted by a lathe was manufactured so that the ground surface was a sputtering surface.
- a pure Al (purity 4N) sputtering target was manufactured.
- the hot rolling start temperature was 610 ° C.
- the maximum rolling reduction per pass was 50%
- the cold rolling rate was 50%.
- Crystal orientation Using the above sputtering target, the crystal orientation in the normal direction of the sputtering surface was measured and analyzed based on the EBSP method described above, and P, PA, PB, Q, QA, and QB values were obtained. And (1) surface area area ratio PA [(PA / P) ⁇ 100], (2) surface layer area ratio PB [(PB / P) ⁇ 100], (3) surface layer area ratio PA and ( Ratio of [1/4) ⁇ t area ratio QA [PA / QA], (4) Ratio of surface area ratio PB to (1/4) ⁇ t area ratio QB [PB / QB] was calculated.
- Sputtering was performed under the following conditions to form a thin film on the glass substrate so that the film thickness was about 600 nm.
- the film formation rate was calculated by the following formula.
- the actual film thickness was measured at three points at an interval of 5 mm from the central portion of the thin film surface with a stylus type step meter, and the average value was taken as the film thickness.
- the film formation speed of each sputtering target was evaluated as being excellent in film formation speed when the film formation speed was 1.05 times or more compared to the film formation speed of a pure Al (purity 4N) sputtering target prepared as a sample.
- the position coordinates, size (average particle diameter), and number of particles recognized on the surface of the thin film were measured.
- particles having a size of 3 ⁇ m or more are regarded as particles.
- the surface of the thin film was observed with an optical microscope (magnification: 1000 times), a hemispherical shape was regarded as a splash, and the number of splashes per unit area was measured.
- the number of splashes was measured in the same manner at the three locations of the surface layer portion, (1/4) ⁇ t portion, and (1/2) ⁇ t portion of the sputtering target.
- the average value of the number of splashes was defined as “the number of occurrences of splash”.
- the number of occurrences of splash thus obtained is 7 / cm 2 or less, ⁇ , 8 to 11 / cm 2 , and 12 to 21 / cm 2 .
- ⁇ , 22 pieces / cm 2 or more were evaluated as x.
- the number of splash occurrences was 21 pieces / cm 2 or less (evaluation: ⁇ , ⁇ , ⁇ )
- a sample for measuring the electrical resistivity of the thin film was prepared by the following procedure.
- a positive photoresist (novolak resin: TSMR-8900 manufactured by Tokyo Ohka Kogyo Co., Ltd., thickness 1.0 ⁇ m, line width 100 ⁇ m) was formed in a stripe pattern on the thin film surface by photolithography. It was processed by wet etching into an electrical resistivity measurement pattern shape having a line width of 100 ⁇ m and a line length of 10 mm.
- No. Examples 1 to 7 are examples in which the alloy composition and the crystal orientation distribution satisfy the requirements of the present invention, and an effect of suppressing the occurrence of splash was recognized even when the film formation rate was increased.
- No. 3 and 4 could not appropriately control one area ratio ((1), (2) in Table 2) of the texture of the surface layer portion, so that the film formation rate of the surface layer portion was (1), (2 ) Is lower than the examples satisfying both of the textures (Nos. 1, 2, 5 to 7), but it is an example in which a sufficient film formation rate can be secured ((1) PA or (2) PB Example of satisfying and further satisfying (3) PA / QA and (4) PB / QB).
- No. Nos. 5 to 7 are examples in which the texture ((1) to (4) in Table 2) satisfies all the requirements of the present invention, and was excellent in all the characteristics of film formation rate, wiring resistance, and splash (( Example of satisfying all of 1) PA, (2) PB, (3) PA / QA, and (4) PB / QB).
- Examples 8 to 12 are examples that do not satisfy all of (1) PA, (2) PB, (3) PA / QA, and (4) PB / QB, and have inferior characteristics such as film forming speed, wiring resistance, and splash. It was.
- No. No. 8 is an example in which the maximum rolling reduction per pass during hot rolling was high and the total rolling reduction was low.
- the surface layer portion and the ratio between the surface layer portion and the inside are outside the scope of the present invention, and a desired film formation rate ratio cannot be obtained.
- No. 9 is an example in which the maximum rolling reduction and cold rolling rate per pass during hot rolling were high.
- the surface layer part and the ratio between the surface layer part and the inside are outside the scope of the present invention, and the desired film formation rate ratio and wiring resistance could not be obtained.
- No. No. 10 is an example in which the Si content is high, the maximum rolling reduction per pass during hot rolling is high, and the total rolling reduction is low. In this example, the desired texture could not be obtained, the film formation rate and the wiring resistance were inferior, and splash occurred.
- No. 11 is an example in which the Fe content is large, the maximum rolling reduction per pass during hot rolling is high, and the total rolling reduction is low.
- the surface layer portion and the ratio between the surface layer portion and the inside are outside the scope of the present invention, the desired film formation rate ratio and the wiring resistance are inferior, and splash occurs.
- No. No. 12 is an example in which the Mn content is high and the maximum rolling reduction and cold rolling rate per pass during hot rolling are high.
- the surface layer part and the ratio between the surface layer part and the inside are outside the scope of the present invention, and the desired film formation rate ratio and wiring resistance could not be obtained.
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Abstract
Description
(1)前記P値に対する、<011>±15°の面積率PA:40%以下、
(2)前記P値に対する、<001>±15°と<111>±15°との合計面積率PB:20%以上
(3)前記最表面から1mm以内の深さにおける<011>±15°の面積率PAと、前記Q値に対する(1/4)×t部の深さにおける<011>±15°の面積率QAとの比率:0.8≧PA/QA
(4)前記最表面から1mm以内の深さにおける<001>±15°と<111>±15°との合計面積率PBと、前記Q値に対する(1/4)×t部の深さにおける<001>±15°と<111>±15°との合計面積率QBとの比率:1.2≦PB/QB
「Orientation Imaging MicroscopyTM(OIMTM)」
測定ソフトウェア:OIM Data Collection ver.5
解析ソフトウェア:OIM Analysis ver.5
測定領域:面積1200μm×1200μm×深さ50nm
step size:8μm
測定視野数:同一測定面内において、3視野
解析時の結晶方位差:±15°
スパッタリング初期は、スパッタリングターゲットの表面が平滑な状態である。そのため、スパッタリング面に対する面方位の影響を受けやすいことからスパッタリングされ難い結晶方位を少なくすることが有効である。原子数密度が高く、スパッタリングされ難い結晶方位である<011>が、スパッタリングターゲット最表面から1mm以内の深さの領域において、スパッタリング面法線方向に多く配向していると、スパッタリングの際に速い成膜速度が得られない。そのため、P値に対する、<011>±15°の面積率PAを40%以下、好ましくは20%以下とした(PAはP値測定面と同じ平面上の面積率である)。なお、その下限は特に限定されず、0%も含み得るが、実操業上、制御し得る最大の割合は、おおむね1%である。
上記したようにスパッタリング初期は、スパッタリングターゲットの表面が平滑な状態である。そのため、スパッタ面に対する面方位の影響を受けやすいことからスパッタリングされやすい結晶方位を多くすることが有効である。したがって、原子数密度が低く、スパッタリングされやすい結晶方位である<111>及び<001>の割合は大きいほどよい。前記P値に対する、<001>±15°と<111>±15°との合計面積率PBを20%以上、好ましくは30%以上とした(PBはP値測定面と同じ平面上の面積率である)。なお、その上限は特に限定されず、100%も含み得るが、実操業上、制御しうる最大の比率は、おおむね95%程度である。
(4)前記最表面から1mm以内の深さにおける<001>±15°と<111>±15°との合計面積率PBと、前記Q値に対する(1/4)×t部の深さにおける<001>±15°と<111>±15°との合計面積率QBとの比率:1.2≦PB/QB
以上、本発明で対象とするCu基合金について説明した。
次に、上記Al(Cu)基合金スパッタリングターゲットを製造する方法について説明する。
溶解鋳造工程は特に限定されず、スパッタリングターゲットの製造に通常用いられる工程を適宜採用し、Al(Cu)基合金鋳塊を造塊すればよい。例えば鋳造方法として、代表的にはDC(半連続)鋳造、薄板連続鋳造(双ロール式、ベルトキャスター式、プロペルチ式、ブロックキャスター式など)などが挙げられる。
上記のようにしてAl(Cu)基合金鋳塊を造塊した後、熱間圧延を行なうが、必要に応じて、熱間圧延前に均熱を行ってもよい。結晶方位分布制御のためには、均熱温度をおおむね300~600℃程度、均熱時間をおおむね1~8時間程度に制御することが好ましい。
上記の均熱を必要に応じて行なった後、熱間圧延を行なう。特に本発明では、熱間圧延条件を制御することによって、両者の関係を上記(1)~(4)で規定するように制御する。すなわち、スパッタリングターゲット最表面から1mm以内の深さの面方向における結晶方位分布制御すると共に、内部(最表面から深さ方向に1mm超の領域、特に(1/4)×t部)における結晶方位分布を制御する。特に上記(1)や(2)で規定するような制御を実現するためには、熱間圧延時の圧延条件(特に1パス当たりの最大圧下率)を適切に制御して最表面から1~3mm以内の深さの領域にせん断ひずみを導入することで、せん断集合組織として<111>、<001>面方位を導入してこれらの面積率PBを増加させ、圧延集合組織として発達し易い<011>面方位の面積率PAを低減することができる。
1パス当たりの圧下率(%)={(圧延1パス前の厚さ)-(圧延1パス後の厚さ)}/(圧延1パス前の厚さ)×100
総圧下率(%)={(圧延開始前の厚さ)-(圧延終了後の厚さ)}/(圧延開始前の厚さ)×100
上記のようにして熱間圧延を行なった後、焼鈍することが望ましい。結晶方位分布および結晶粒径制御のためには、焼鈍温度を高くすると、結晶粒が粗大化する傾向にあるため、450℃以下とすることが好ましい。一方、焼鈍温度の下限は特に限定されず、焼鈍を行わなくてもよい。もっとも焼鈍温度が低すぎると、上記熱延等で適切に処理していない場合には所望の結晶方位が得られなかったり、結晶粒が微細化されずに粗大な結晶粒が残留することがある。そのため焼鈍を行う場合は、好ましくは150℃以上、より好ましくは180℃以上、更に好ましくは250℃以上とする。焼鈍時間はおおむね1~10時間程度に制御することが好ましい。
上記の製法によりスパッタリングターゲットの結晶方位分布を制御することができるが、その後に、更に冷間圧延→焼鈍(2回目の圧延、焼鈍)を行なってもよい。結晶方位分布および結晶粒径を適切に制御する観点からは、焼鈍条件を制御することが好ましい。例えば焼鈍温度は150~250℃、焼鈍時間は1~5時間の範囲に制御することが推奨される。
表1に示す種々の組成からなるAl基合金を用意し、鋳塊をDC鋳造法によって造塊した。その後、表1に記載の条件で熱間圧延および焼鈍を行って圧延板を作製した。圧延板を室温まで放冷した後、表1記載の圧下率で適宜冷間圧延を行った。その後、適宜焼鈍を行って圧延板を作製した。
上記のスパッタリングターゲットを用い、前述したEBSP法に基づき、スパッタリング面法線方向の結晶方位を測定し、解析してP、PA、PB、Q、QA、QB値を求めた。そして(1)表層部の面積率PA[(PA/P)×100]、(2)表層部の面積率PB[(PB/P)×100]、(3)表層部の面積率PAと(1/4)×t部の面積率QAとの比率[PA/QA]、(4)表層部の面積率PBと(1/4)×t部の面積率QBとの比率[PB/QB]を算出した。
上記スパッタリングターゲットを用いて、表層部1mmまでのスパッタリングと、(1/4)×t部までスパッタリングした際の成膜速度の測定を行った。
スパッタリング条件:
背圧:3.0×10-6Torr以下、
Arガス圧:2.25×10-3Torr、
Arガス流量:30sccm、
スパッタリングパワー:DC260W、
極間距離:52mm、
基板温度:室温、
スパッタリング時間:120秒、
ガラス基板:CORNING社製#1737(直径50.8mm、厚さ0.7mm)、
触針式膜厚計:TENCOR INSTRUMENTS製alpha-step 250
成膜速度=平均膜厚(nm)/スパッタリング時間(s)
本実施例では、高スパッタリングパワーの条件下で発生しやすいスプラッシュの発生数を測定し、スプラッシュの発生を評価した。
Y値=成膜速度(2.74nm/s)×スパッタリングパワー(260W)
=713
成膜速度:2.79nm/s
下式に基づき、スパッタリングパワーを255Wと設定
スパッタリングパワー=Y値(713)/成膜速度(2.79)
≒255W
薄膜の電気抵抗率測定用サンプルは、以下の手順で作製した。上記の薄膜表面上に、フォトリソグラフィによってポジ型フォトレジスト(ノボラック系樹脂:東京応化工業製TSMR-8900、厚さ1.0μm、線幅100μm)をストライプパターンに形成した。ウェットエッチングによって線幅100μm、線長10mmの電気抵抗率測定用パターン形状に加工した。ウェットエッチングにはH3PO4:HNO3:H2O=75:5:20の混合液を用いた。熱履歴を与えるため、前記エッチング処理後に、CVD装置内の減圧窒素雰囲気(圧力:1Pa)を用いて250℃で30分保持する雰囲気熱処理を行なった。その後、四探針法により電気抵抗率を室温で測定した。3.7μΩcm以下のものを良好(○)、3.7μΩcm超のものを不良(×)と評価した。
Claims (5)
- Al基合金またはCu基合金スパッタリングターゲットであって、
後方散乱電子回折像法によって前記スパッタリングターゲットの最表面から1mm以内の深さにおけるスパッタリング面法線方向の結晶方位<001>、<011>、<111>、<112>、及び<012>を観察し、<001>±15°と、<011>±15°と、<111>±15°と、<112>±15°と、<012>±15°との合計面積率をP値としたとき、下記(1)および/または(2)の要件を満足することを特徴とするスパッタリングターゲット。
(1)前記P値に対する、<011>±15°の面積率PA:40%以下、
(2)前記P値に対する、<001>±15°と<111>±15°との合計面積率PB:20%以上 - 前記Al基合金またはCu基合金スパッタリングターゲットにおいて、
後方散乱電子回折像法によって前記スパッタリングターゲットの表面から(1/4)×t(板厚)部の深さにおけるスパッタリング面法線方向の結晶方位<001>、<011>、<111>、<112>、及び<012>を観察し、<001>±15°と、<011>±15°と、<111>±15°と、<112>±15°と、<012>±15°との合計面積率をQ値としたとき、下記(3)および/または(4)の要件を満足するものである請求項1に記載のスパッタリングターゲット。
(3)前記最表面から1mm以内の深さにおける<011>±15°の面積率PAと、前記Q値に対する(1/4)×t部の深さにおける<011>±15°の面積率QAとの比率:0.8≧PA/QA
(4)前記最表面から1mm以内の深さにおける<001>±15°と<111>±15°との合計面積率PBと、前記Q値に対する(1/4)×t部の深さにおける<001>±15°と<111>±15°との合計面積率QBとの比率:1.2≦PB/QB - 前記Al基合金がFeを0.0001~1.0質量%、及びSiを0.0001~1.0質量%含有するものである請求項1または2に記載のスパッタリングターゲット。
- 前記Al基合金が更に、Mn、Cr、Mo、Nb、Ti、及びTaよりなる群から選択される少なくとも一種を0.0001~0.5質量%含むものである請求項3に記載のスパッタリングターゲット。
- 前記Cu基合金が酸素を0.00001~0.04質量%、水素を0.00001~0.003質量%、及び不可避不純物を0.01質量%以下含有するものである請求項1または2に記載のスパッタリングターゲット。
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US13/981,414 US9551065B2 (en) | 2011-02-04 | 2011-12-20 | Al-based alloy sputtering target and Cu-based alloy sputtering target |
KR1020137023300A KR20130122965A (ko) | 2011-02-04 | 2011-12-20 | Al기 합금 스퍼터링 타깃 및 Cu기 합금 스퍼터링 타깃 |
CN201180066834.7A CN103348036B (zh) | 2011-02-04 | 2011-12-20 | Al基合金溅射靶及Cu基合金溅射靶 |
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WO2018235889A1 (ja) * | 2017-06-22 | 2018-12-27 | 株式会社Uacj | スパッタリングターゲット材、スパッタリングターゲット、スパッタリングターゲット用アルミニウム板及びその製造方法 |
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US9159850B2 (en) * | 2012-04-25 | 2015-10-13 | Guardian Industries Corp. | Back contact having selenium blocking layer for photovoltaic devices such as copper—indium-diselenide solar cells |
JP5783293B1 (ja) * | 2014-04-22 | 2015-09-24 | 三菱マテリアル株式会社 | 円筒型スパッタリングターゲット用素材 |
JP6377021B2 (ja) * | 2015-06-05 | 2018-08-22 | 株式会社コベルコ科研 | Al合金スパッタリングターゲット |
WO2018117717A1 (ko) * | 2016-12-23 | 2018-06-28 | 희성금속 주식회사 | 스퍼터링 타겟의 증착속도 예측방법, 이에 따라 증착속도가 제어된 스퍼터링 타겟 및 이의 제조방법 |
KR102001028B1 (ko) * | 2016-12-23 | 2019-07-17 | 엘티메탈 주식회사 | 스퍼터링 타켓의 속도지수를 이용한 증착속도 예측방법 |
KR102491201B1 (ko) * | 2017-12-19 | 2023-01-25 | 엘티메탈 주식회사 | 증착속도가 제어된 스퍼터링 타겟 및 이의 제조방법 |
JP2018204059A (ja) * | 2017-05-31 | 2018-12-27 | 株式会社神戸製鋼所 | フレキシブル表示装置用Al合金膜およびフレキシブル表示装置 |
WO2021117302A1 (ja) * | 2019-12-13 | 2021-06-17 | 株式会社アルバック | アルミニウム合金ターゲット、アルミニウム合金配線膜、及びアルミニウム合金配線膜の製造方法 |
JP2023124653A (ja) * | 2022-02-25 | 2023-09-06 | Jx金属株式会社 | スパッタリングターゲット及びその製造方法 |
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TW201237195A (en) | 2012-09-16 |
US20130306468A1 (en) | 2013-11-21 |
JP2012162768A (ja) | 2012-08-30 |
JP5723171B2 (ja) | 2015-05-27 |
CN103348036A (zh) | 2013-10-09 |
KR20130122965A (ko) | 2013-11-11 |
TWI471439B (zh) | 2015-02-01 |
CN103348036B (zh) | 2015-09-23 |
US9551065B2 (en) | 2017-01-24 |
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