DE602006013436D1 - Tieftopfgeformtes kupfersputtertarget - Google Patents

Tieftopfgeformtes kupfersputtertarget

Info

Publication number
DE602006013436D1
DE602006013436D1 DE602006013436T DE602006013436T DE602006013436D1 DE 602006013436 D1 DE602006013436 D1 DE 602006013436D1 DE 602006013436 T DE602006013436 T DE 602006013436T DE 602006013436 T DE602006013436 T DE 602006013436T DE 602006013436 D1 DE602006013436 D1 DE 602006013436D1
Authority
DE
Germany
Prior art keywords
deep
sputter target
shaped copper
copper sputter
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006013436T
Other languages
English (en)
Inventor
Atsushi Fukushima
Shiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Eneos Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of DE602006013436D1 publication Critical patent/DE602006013436D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE602006013436T 2005-03-28 2006-02-08 Tieftopfgeformtes kupfersputtertarget Active DE602006013436D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005090609 2005-03-28
PCT/JP2006/302122 WO2006103833A1 (ja) 2005-03-28 2006-02-08 深鍋状銅製スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
DE602006013436D1 true DE602006013436D1 (de) 2010-05-20

Family

ID=37053102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006013436T Active DE602006013436D1 (de) 2005-03-28 2006-02-08 Tieftopfgeformtes kupfersputtertarget

Country Status (8)

Country Link
US (1) US8728255B2 (de)
EP (3) EP1865090B1 (de)
JP (1) JP4650811B2 (de)
KR (1) KR100947200B1 (de)
CN (1) CN101151398B (de)
DE (1) DE602006013436D1 (de)
TW (1) TW200643207A (de)
WO (1) WO2006103833A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60231538D1 (de) * 2001-11-26 2009-04-23 Nikko Materials Co Ltd Sputtertarget und herstellungsverfahren dafür
US8030082B2 (en) 2006-01-13 2011-10-04 Honeywell International Inc. Liquid-particle analysis of metal materials
US20100013096A1 (en) * 2006-10-03 2010-01-21 Nippon Mining & Metals Co., Ltd. Cu-Mn Alloy Sputtering Target and Semiconductor Wiring
JP5379010B2 (ja) * 2008-02-08 2013-12-25 Ｊｘ日鉱日石金属株式会社 イッテルビウム製スパッタリングターゲット及び同ターゲットの製造方法。
JP5092939B2 (ja) * 2008-07-01 2012-12-05 日立電線株式会社 Ｔｆｔ用平板型銅スパッタリングターゲット材及びスパッタリング方法
KR101290856B1 (ko) * 2008-09-30 2013-07-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리 또는 고순도 구리 합금 스퍼터링 타겟 및 동 스퍼터링 타겟의 제조 방법
US20110123389A1 (en) 2008-09-30 2011-05-26 Jx Nippon Mining & Metals Corporation High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
US9347130B2 (en) 2009-03-27 2016-05-24 Jx Nippon Mining & Metals Corporation Lanthanum target for sputtering
KR101376453B1 (ko) 2009-03-31 2014-03-19 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링용 란타늄 타깃
KR101273021B1 (ko) * 2009-08-12 2013-06-10 가부시키가이샤 아루박 스퍼터링 타겟의 제조 방법 및 스퍼터링 타겟
JP5607512B2 (ja) * 2010-11-24 2014-10-15 古河電気工業株式会社 円筒状ターゲット材、その製造方法、及び、そのシート被覆方法
CN102618836B (zh) * 2011-01-28 2014-04-02 赖志煌 用于制作薄膜太阳能电池的薄膜化合物的靶材、薄膜太阳能电池的制作方法及薄膜太阳能电池
JP5723171B2 (ja) * 2011-02-04 2015-05-27 株式会社神戸製鋼所 Ａｌ基合金スパッタリングターゲット
CN102146554B (zh) * 2011-03-16 2012-08-15 杭州宣宁电子材料有限公司 一种高纯铜溅射靶材的制备方法
JP5723247B2 (ja) * 2011-09-09 2015-05-27 株式会社Ｓｈカッパープロダクツ 円筒型スパッタリングターゲット材、それを用いた配線基板及び薄膜トランジスタの製造方法
JP5793069B2 (ja) * 2011-12-26 2015-10-14 株式会社Ｓｈカッパープロダクツ スパッタリング用銅ターゲット材の製造方法
KR101645834B1 (ko) 2012-01-12 2016-08-04 제이엑스금속주식회사 고순도 구리 스퍼터링 타깃
JP5567042B2 (ja) * 2012-02-10 2014-08-06 株式会社Ｓｈカッパープロダクツ Ｔｆｔ用銅スパッタリングターゲット材
US9761420B2 (en) * 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
CN105722355B (zh) * 2014-12-05 2020-01-21 宏达国际电子股份有限公司 电子装置壳体及其加工方法
CN112921287B (zh) * 2021-01-22 2022-10-28 宁波江丰电子材料股份有限公司 一种超高纯铜靶材及其晶粒取向控制方法
CN113046705B (zh) * 2021-03-16 2022-08-16 宁波江丰电子材料股份有限公司 一种铜靶材及其制备方法和用途

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
JP3975414B2 (ja) * 1997-11-28 2007-09-12 日立金属株式会社 スパッタリング用銅ターゲットおよびその製造方法
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6946039B1 (en) * 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
AU2002236551A1 (en) * 2001-07-19 2003-03-03 Honeywell International Inc. Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
DE60231538D1 (de) * 2001-11-26 2009-04-23 Nikko Materials Co Ltd Sputtertarget und herstellungsverfahren dafür
EP1666630A4 (de) * 2003-09-12 2012-06-27 Jx Nippon Mining & Metals Corp Sputtertarget und verfahren zur endbearbeitung der oberfläche eines derartigen targets

Also Published As

Publication number Publication date
CN101151398A (zh) 2008-03-26
WO2006103833A1 (ja) 2006-10-05
EP1865090A1 (de) 2007-12-12
EP2123790A1 (de) 2009-11-25
JP4650811B2 (ja) 2011-03-16
EP2123791A1 (de) 2009-11-25
EP1865090B1 (de) 2010-04-07
EP2123791B1 (de) 2014-08-13
US20090057139A1 (en) 2009-03-05
KR20070107164A (ko) 2007-11-06
KR100947200B1 (ko) 2010-03-11
EP1865090A4 (de) 2008-04-16
TW200643207A (en) 2006-12-16
US8728255B2 (en) 2014-05-20
TWI333508B (de) 2010-11-21
CN101151398B (zh) 2012-06-27
JPWO2006103833A1 (ja) 2008-09-04

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