TW200643207A - Deep-pot-shaped copper sputtering target and process for producing the same - Google Patents

Deep-pot-shaped copper sputtering target and process for producing the same

Info

Publication number
TW200643207A
TW200643207A TW095107542A TW95107542A TW200643207A TW 200643207 A TW200643207 A TW 200643207A TW 095107542 A TW095107542 A TW 095107542A TW 95107542 A TW95107542 A TW 95107542A TW 200643207 A TW200643207 A TW 200643207A
Authority
TW
Taiwan
Prior art keywords
sputtering target
pot
deep
shaped copper
copper sputtering
Prior art date
Application number
TW095107542A
Other languages
English (en)
Other versions
TWI333508B (zh
Inventor
Atsushi Fukushima
Shiro Tsukamoto
Original Assignee
Nippon Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co filed Critical Nippon Mining Co
Publication of TW200643207A publication Critical patent/TW200643207A/zh
Application granted granted Critical
Publication of TWI333508B publication Critical patent/TWI333508B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW095107542A 2005-03-28 2006-03-07 Deep-pot-shaped copper sputtering target and process for producing the same TW200643207A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005090609 2005-03-28

Publications (2)

Publication Number Publication Date
TW200643207A true TW200643207A (en) 2006-12-16
TWI333508B TWI333508B (zh) 2010-11-21

Family

ID=37053102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107542A TW200643207A (en) 2005-03-28 2006-03-07 Deep-pot-shaped copper sputtering target and process for producing the same

Country Status (8)

Country Link
US (1) US8728255B2 (zh)
EP (3) EP1865090B1 (zh)
JP (1) JP4650811B2 (zh)
KR (1) KR100947200B1 (zh)
CN (1) CN101151398B (zh)
DE (1) DE602006013436D1 (zh)
TW (1) TW200643207A (zh)
WO (1) WO2006103833A1 (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046250A1 (fr) * 2001-11-26 2003-06-05 Nikko Materials Company, Limited Cible de pulverisation et procede de fabrication associe
US8030082B2 (en) 2006-01-13 2011-10-04 Honeywell International Inc. Liquid-particle analysis of metal materials
KR101070185B1 (ko) * 2006-10-03 2011-10-05 Jx닛코 닛세끼 킨조쿠 가부시키가이샤 구리-망간 합금 스퍼터링 타겟트 및 반도체 배선
WO2009099121A1 (ja) * 2008-02-08 2009-08-13 Nippon Mining & Metals Co., Ltd. イッテルビウム製スパッタリングターゲット及び同ターゲットの製造方法
JP5092939B2 (ja) * 2008-07-01 2012-12-05 日立電線株式会社 Ｔｆｔ用平板型銅スパッタリングターゲット材及びスパッタリング方法
EP3128039B1 (en) * 2008-09-30 2019-05-01 JX Nippon Mining & Metals Corp. High-purity copper sputtering target or high-purity copper alloy sputtering target
US20110123389A1 (en) 2008-09-30 2011-05-26 Jx Nippon Mining & Metals Corporation High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
JP5497740B2 (ja) * 2009-03-27 2014-05-21 Ｊｘ日鉱日石金属株式会社 スパッタリング用ランタンターゲット
JP5456763B2 (ja) 2009-03-31 2014-04-02 Ｊｘ日鉱日石金属株式会社 スパッタリング用ランタンターゲット
DE112010003274T5 (de) * 2009-08-12 2012-12-27 Ulvac, Inc. Verfahren zur Herstellung eines Sputtertargets sowie Sputtertarget
JP5607512B2 (ja) * 2010-11-24 2014-10-15 古河電気工業株式会社 円筒状ターゲット材、その製造方法、及び、そのシート被覆方法
CN102618836B (zh) * 2011-01-28 2014-04-02 赖志煌 用于制作薄膜太阳能电池的薄膜化合物的靶材、薄膜太阳能电池的制作方法及薄膜太阳能电池
JP5723171B2 (ja) * 2011-02-04 2015-05-27 株式会社神戸製鋼所 Ａｌ基合金スパッタリングターゲット
CN102146554B (zh) * 2011-03-16 2012-08-15 杭州宣宁电子材料有限公司 一种高纯铜溅射靶材的制备方法
JP5723247B2 (ja) * 2011-09-09 2015-05-27 株式会社Ｓｈカッパープロダクツ 円筒型スパッタリングターゲット材、それを用いた配線基板及び薄膜トランジスタの製造方法
JP5793069B2 (ja) * 2011-12-26 2015-10-14 株式会社Ｓｈカッパープロダクツ スパッタリング用銅ターゲット材の製造方法
JP5747091B2 (ja) 2012-01-12 2015-07-08 Jx日鉱日石金属株式会社 高純度銅スパッタリングターゲット
JP5567042B2 (ja) * 2012-02-10 2014-08-06 株式会社Ｓｈカッパープロダクツ Ｔｆｔ用銅スパッタリングターゲット材
US9761420B2 (en) * 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
CN105722355B (zh) * 2014-12-05 2020-01-21 宏达国际电子股份有限公司 电子装置壳体及其加工方法
CN112921287B (zh) * 2021-01-22 2022-10-28 宁波江丰电子材料股份有限公司 一种超高纯铜靶材及其晶粒取向控制方法
CN113046705B (zh) * 2021-03-16 2022-08-16 宁波江丰电子材料股份有限公司 一种铜靶材及其制备方法和用途

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
JP3975414B2 (ja) * 1997-11-28 2007-09-12 日立金属株式会社 スパッタリング用銅ターゲットおよびその製造方法
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6946039B1 (en) * 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
WO2003008656A2 (en) * 2001-07-19 2003-01-30 Honeywell International Inc. Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
WO2003046250A1 (fr) * 2001-11-26 2003-06-05 Nikko Materials Company, Limited Cible de pulverisation et procede de fabrication associe
EP1666630A4 (en) * 2003-09-12 2012-06-27 Jx Nippon Mining & Metals Corp SPUTTERTARGET AND METHOD FOR FINISHING THE SURFACE OF SUCH A TARGET

Also Published As

Publication number Publication date
JPWO2006103833A1 (ja) 2008-09-04
EP1865090A1 (en) 2007-12-12
WO2006103833A1 (ja) 2006-10-05
US8728255B2 (en) 2014-05-20
JP4650811B2 (ja) 2011-03-16
CN101151398B (zh) 2012-06-27
TWI333508B (zh) 2010-11-21
KR20070107164A (ko) 2007-11-06
KR100947200B1 (ko) 2010-03-11
EP1865090A4 (en) 2008-04-16
EP1865090B1 (en) 2010-04-07
EP2123791A1 (en) 2009-11-25
EP2123791B1 (en) 2014-08-13
US20090057139A1 (en) 2009-03-05
CN101151398A (zh) 2008-03-26
DE602006013436D1 (de) 2010-05-20
EP2123790A1 (en) 2009-11-25

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