WO2012090961A1 - Dispositif électroluminescent, procédé de fabrication d'un dispositif électroluminescent et liquide de revêtement - Google Patents

Dispositif électroluminescent, procédé de fabrication d'un dispositif électroluminescent et liquide de revêtement Download PDF

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Publication number
WO2012090961A1
WO2012090961A1 PCT/JP2011/080122 JP2011080122W WO2012090961A1 WO 2012090961 A1 WO2012090961 A1 WO 2012090961A1 JP 2011080122 W JP2011080122 W JP 2011080122W WO 2012090961 A1 WO2012090961 A1 WO 2012090961A1
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Prior art keywords
light
phosphor
emitting device
thin film
light emitting
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PCT/JP2011/080122
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English (en)
Japanese (ja)
Inventor
小嶋　健
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コニカミノルタオプト株式会社
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Priority to JP2012550949A priority Critical patent/JPWO2012090961A1/ja
Publication of WO2012090961A1 publication Critical patent/WO2012090961A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates to a light emitting device using a light emitting element and a phosphor, a method for manufacturing the light emitting device, and a coating solution.
  • phosphors such as YAG phosphors are arranged in the vicinity of a gallium nitride (GaN) -based blue LED (Light Emitting Diode) chip, and the blue light emitted from the blue LED chip and the phosphor are blue.
  • GaN gallium nitride
  • a technique of emitting white light by mixing yellow light emitted upon receiving light is widely used.
  • the use of such a white LED that emits white light is expanding to various fields, and among them, it is applied to a lighting device such as a headlight of an automobile that requires extremely high luminance. It is being considered.
  • a method of sealing LED chips and mounting parts using a transparent resin containing phosphor particles therein as a sealing member is generally used.
  • a transparent resin material a silicon polymer that can obtain high color uniformity and excellent in light resistance, in particular, a silicone resin using a bifunctional (D unit) silicon compound such as polydimethylsiloxane as a raw material.
  • a bifunctional (D unit) silicon compound such as polydimethylsiloxane
  • Patent Document 1 discloses a technique for improving light resistance by using a tetrafunctional (Q unit) silicon compound as a transparent resin.
  • tetrafunctional silicon compounds have poor structural flexibility and processability, they cannot withstand the stress generated when forming a transparent ceramic thin film using a condensation reaction, and are sufficient to hold phosphor particles. When a sealing portion having a sufficient thickness is formed, there is a problem that cracks are likely to occur.
  • An object of the present invention is to provide a light-emitting device, a method for manufacturing the light-emitting device, and a coating liquid that can prevent cracks from being generated when a sealing portion is formed.
  • a light-emitting device comprising a light-emitting element and a translucent thin film formed on the light-emitting element
  • the translucent thin film is made of a ceramic material containing a phosphor
  • the ceramic material is obtained by firing silsesquioxane whose composition formula is represented by (R—SiO 3/2 ) n .
  • a light-emitting device is provided in which the translucent thin film has a thickness of 5 to 200 ⁇ m.
  • R is an organic group, specifically an alkyl group or an aryl group.
  • the term “silsesquioxane” refers to those containing at least 80% silsesquioxane, and includes other components that are conventionally mixed in the synthesis process of silsesquioxane. Including
  • a light emitting device having high light resistance and capable of sealing a light emitting element with a sealing portion that does not cause cracks during formation.
  • FIG. 1 is a cross-sectional view of the light emitting device.
  • the light emitting device 100 has an LED substrate 1 having a concave cross section.
  • a metal portion 2 is provided in a concave portion (bottom portion) of the LED substrate 1, and a rectangular parallelepiped LED element 3 is disposed on the metal portion 2.
  • the LED element 3 is an example of a light emitting element that emits light of a predetermined wavelength.
  • a protruding electrode 4 is provided on the surface of the LED element 3 facing the metal portion 2, and the metal portion 2 and the LED element 3 are connected via the protruding electrode 4 (flip chip type).
  • a configuration in which one LED element 3 is provided for one LED substrate 1 is illustrated, but a plurality of LED elements 3 may be provided in a concave portion of one LED substrate 1.
  • a blue LED element is used as the LED element 3.
  • the blue LED element is formed, for example, by laminating an n-GaN-based cladding layer, an InGaN light-emitting layer, a p-GaN-based cladding layer, and a transparent electrode on a sapphire substrate.
  • the wavelength conversion part 6 is formed in the recess of the LED substrate 1 so as to seal the periphery of the LED element 3.
  • the wavelength conversion unit 6 is a translucent thin film formed by adding a phosphor to a layer of transparent ceramic material having translucency (hereinafter referred to as a transparent ceramic layer).
  • the phosphor added to the transparent ceramic layer is excited by light having a predetermined wavelength (excitation light) in the emitted light of the LED element 3, and emits fluorescence having a wavelength different from the wavelength of the excitation light.
  • the thickness of the wavelength converter 6 is preferably 5 to 200 ⁇ m, more preferably 10 to 200 ⁇ m, and still more preferably 10 to 100 ⁇ m.
  • the wavelength conversion part 6 is good also as a structure provided only in the upper surface and side surface of the LED element 3.
  • FIG. 3 As a method of providing the wavelength conversion unit 6 only around the LED element 3, a method of installing a mask when forming the wavelength conversion unit 6 is used.
  • a thin film layer 7 is formed on the upper surface and side surfaces of the wavelength conversion unit 6.
  • the thin film layer 7 is formed using a bifunctional (D unit) siloxane compound similar to the transparent resin material conventionally used for sealing the periphery of the LED element 3.
  • organosilicon polymers such as polydimethylsiloxane are preferably used.
  • the wavelength conversion unit 6 uses a so-called sol-gel method in which a sol-like mixed liquid (hereinafter referred to as a ceramic precursor liquid) obtained by mixing silsesquioxane and an organic solvent, which will be described later, is heated to a gel state and further fired.
  • a sol-like mixed liquid hereinafter referred to as a ceramic precursor liquid
  • the formed transparent ceramic layer contains a phosphor, a layered silicate mineral (layered clay mineral), and inorganic fine particles in the transparent ceramic layer.
  • Silsesquioxane serves as a binder for encapsulating phosphors, layered silicate minerals, and inorganic fine particles to form a transparent ceramic layer.
  • Silsesquioxane is a trifunctional (T unit) siloxane and is represented by a composition formula (R—SiO 3/2 ) n .
  • R is an organic group, specifically an alkyl group or an aryl group.
  • the alkyl group is preferably a methyl group or an ethyl group, and the aryl group is preferably a phenyl group.
  • Silsesquioxanes have cage, ladder, and random three-dimensional structures.
  • the silsesquioxane of this embodiment is characterized by containing a silsesquioxane having a cage structure having robustness.
  • the silicon atoms form a skeleton of a triangular prism, a pentagonal column, a hexagonal column, and a heptagonal column, respectively.
  • the phosphor is excited by the emitted light from the LED element 3 and emits fluorescence having a wavelength different from the wavelength of the emitted light.
  • a YAG (yttrium aluminum garnet) phosphor that is excited by blue light (wavelength 420 nm to 485 nm) emitted from a blue LED element and emits yellow light (wavelength 550 nm to 650 nm) is used. .
  • a YAG phosphor In order to produce such a YAG phosphor, first, an oxide of Y, Gd, Ce, Sm, Al, La, Ga, or a compound that easily becomes an oxide at a high temperature is used, and these are stoichiometrically converted. Thorough mixing is performed at a theoretical ratio to obtain a mixed raw material. Alternatively, a coprecipitated oxide obtained by firing a solution obtained by coprecipitation of oxalic acid from a solution obtained by dissolving rare earth elements of Y, Gd, Ce, and Sm in an acid at a stoichiometric ratio with aluminum oxide and gallium oxide Mix to obtain a mixed raw material.
  • the larger the particle size of the phosphor the higher the light emission efficiency (wavelength conversion efficiency), but the gap generated at the interface with the transparent ceramic material increases, and the film strength of the formed transparent ceramic layer decreases. Therefore, it is preferable to use one having an average particle diameter of 1 ⁇ m or more and 50 ⁇ m or less in consideration of the light emission efficiency and the size of the gap generated at the interface.
  • the average particle diameter of the phosphor is measured, for example, by a Coulter counter method.
  • the YAG phosphor is used, but the type of the phosphor is not limited to this, and other phosphors such as a non-garnet phosphor that does not contain Ce are used. You can also.
  • the layered silicate mineral increases the viscosity of the mixed solution by being added to the mixed solution of the ceramic precursor and the phosphor and functions to suppress the precipitation of the phosphor.
  • a swellable clay mineral having a mica structure, a kaolinite structure, a smectite structure, or the like is preferable, and a swellable smectite structure is particularly preferable.
  • the smectite structure has a card house structure in which water is added to the mixed solution and swells as the water enters between the layers, so that the viscosity of the mixed solution is greatly increased with a small amount.
  • the content of the layered silicate mineral in the transparent ceramic layer is less than 0.5% by weight, the effect of increasing the viscosity of the mixed solution cannot be obtained sufficiently.
  • the content of the layered silicate mineral exceeds 20% by weight, the strength of the transparent ceramic layer formed by heating decreases. Accordingly, the content of the layered silicate mineral is preferably 0.5 wt% or more and 20 wt% or less, and more preferably 0.5 wt% or more and 10 wt% or less.
  • a layered silicate mineral whose surface is modified (surface treatment) with an ammonium salt or the like can be used as appropriate.
  • the inorganic fine particles have a filling effect that fills the gap formed at the interface between the transparent ceramic material, the phosphor and the layered silicate mineral, a thickening effect that increases the viscosity of the mixed liquid before heating, and a transparent ceramic layer after heating. It has a film strengthening effect that improves the film strength.
  • the inorganic fine particles used in the present invention include oxide fine particles such as silicon oxide, titanium oxide and zinc oxide, and fluoride fine particles such as magnesium fluoride. In particular, it is preferable to use fine particles of silicon oxide from the viewpoint of stability with respect to the formed transparent ceramic layer.
  • the content of the inorganic fine particles in the transparent ceramic layer is less than 0.5% by weight, the respective effects described above cannot be sufficiently obtained.
  • the content of the inorganic fine particles exceeds 50% by weight, the strength of the transparent ceramic layer formed by heating decreases. Therefore, the content of the inorganic fine particles in the transparent ceramic layer is preferably 0.5% by weight or more and 50% by weight or less, and more preferably 1% by weight or more and 40% by weight or less.
  • the average particle diameter of the inorganic fine particles is measured, for example, by a Coulter counter method.
  • a material obtained by treating the surface of inorganic fine particles with a silane coupling agent or a titanium coupling agent can be used as appropriate.
  • a phosphor coating solution prepared by mixing phosphor, layered silicate mineral, and inorganic fine particles in a ceramic precursor solution in which silsesquioxane is mixed with an organic solvent (diluted)
  • the wavelength conversion part 6 which has translucency and fluorescence is formed by apply
  • organic solvent aliphatic hydrocarbons, aromatic hydrocarbons, halogen hydrocarbons, ethers, esters, alcohols, ketones and the like can be used.
  • methyl ethyl ketone, tetrahydrofuran, benzene, chloroform, ethyl ether, isopropyl ether, dibutyl ether, ethyl butyl ether, methanol, ethanol, isopropyl alcohol, ethylene glycol, propylene glycol, butanediol, glycerol, and acetone are used.
  • the mixing amount of silsesquioxane with respect to the organic solvent is preferably 5% by weight or more and 50% by weight or less, and more preferably 8% by weight or more and 40% by weight or less.
  • the procedure for preparing the phosphor coating liquid is not limited to the order of mixing silsesquioxane, solvent, phosphor, layered silicate mineral, and inorganic fine particles.
  • the order is not limited, but when using a hydrophilic layered silicate mineral that has not been surface-treated, first, the layered silicate mineral and water are premixed. Then, it is preferable from the viewpoint of obtaining a thickening effect that phosphor, inorganic fine particles, and ceramic precursor liquid are mixed thereafter.
  • the preferred viscosity of the mixed solution is 25 to 800 cP, and the most preferred viscosity is 30 to 500 cP.
  • the most preferable composition range of the phosphor coating solution is 2 to 10% by weight of silsesquioxane, 10 to 50% by weight of phosphor, 1 to 20% by weight of layered silicate mineral, and 1 to 40% by weight of inorganic fine particles.
  • a solvent or a mixture of a solvent and water is 20 to 80% by weight.
  • a thin film of a transparent ceramic layer that becomes the wavelength conversion section 6 is formed by the phosphor coating solution prepared by the above composition.
  • the formation of the transparent ceramic layer is not particularly limited.
  • the transparent ceramic layer is formed by spraying a phosphor coating solution onto the light emitting device 100.
  • FIG. 2 is a diagram for explaining a manufacturing apparatus for forming a transparent ceramic layer.
  • the manufacturing apparatus 10 mainly includes a movable table 20 that can move up and down, left and right, and back and forth, a spray device 30 that can spray the phosphor coating liquid 40 described above, and the chromaticity and luminance of the wavelength conversion unit 6. And an inspection device 50 capable of inspecting.
  • the spray device 30 is disposed above the movable table 20.
  • the spray device 30 has a nozzle 32 into which air is sent. Or the structure which sprays the fluorescent substance coating liquid 40 toward the upper direction may be sufficient as the spray apparatus 30 is installed under the moving stand 20.
  • the hole diameter at the tip of the nozzle 32 is 20 ⁇ m to 2 mm, preferably 0.1 to 0.3 mm.
  • the nozzle 32 can move up and down, left and right, and back and forth, like the moving table 20. Moreover, it is also possible to adjust the angle of the nozzle 32, and it can be made to incline with respect to the moving stand 20 (or LED board 1 installed in this).
  • the nozzle 32 has a built-in temperature adjustment mechanism, and can adjust the temperature of the ejected matter.
  • a tank 36 is connected to the nozzle 32 via a connecting pipe 34.
  • a phosphor coating liquid 40 is stored in the tank 36.
  • the tank 36 contains a stirrer. By constantly stirring the phosphor coating solution 40 with this stirrer, the phosphor having a large specific gravity is prevented from settling, and the phosphor is dispersed in the phosphor coating solution 40. Keep state.
  • a motor or the like is used as a drive source, and the phosphor coating liquid 40 is sprayed from the nozzle 32 by directly applying pressure to the phosphor coating liquid 40 in the tank 36. It is also possible to use a mechanism that performs or extrudes.
  • the inspection device 50 includes an LED element 52 and a color luminance meter 54.
  • the LED element 52 is an element that emits light similar to that of the LED element 3.
  • the color luminance meter 54 is a measuring instrument that measures the chromaticity and luminance of received light.
  • the wavelength conversion unit 6 When actually forming the wavelength conversion unit 6, a plurality of LED substrates 1 on which the LED elements 3 are mounted in advance are installed on the moving table 20, and the LED substrate 1 and the tip of the nozzle 32 are arranged to face each other. The distance between the LED substrate 1 and the tip of the nozzle 32 is 50 to 300 mm. Thereafter, while the LED substrate 1 and the nozzle 32 are moved relative to each other, the phosphor coating solution 40 is sprayed from the nozzle 32 to spray-coat the phosphor coating solution 40 onto the LED substrate 1. At this time, the spray amount of the phosphor coating liquid 40 is constant, and the phosphor amount per unit area is constant. And the film thickness of the wavelength conversion part 6 is determined by adjusting the injection time per unit area.
  • the moving base 20 is moved to inject the phosphor coating liquid 40 onto the glass plate 60, and chromaticity and luminance are inspected using the inspection device 50. By doing so, the injection amount can be adjusted.
  • the LED substrate 1 coated with the phosphor coating solution 40 is transferred to a firing furnace, and the phosphor coating solution 40 is baked.
  • the firing temperature at this time is set to such an extent that the LED element 3 is not damaged.
  • the firing temperature set in the present invention is 100 to 300 ° C, preferably 130 to 170 ° C, more preferably 140 to 160 ° C, and most preferably around 150 ° C.
  • the wavelength conversion part 6 is formed because the fluorescent substance coating liquid 40 is baked.
  • a layered silicate mineral, inorganic fine particles, and a phosphor liquid in which a phosphor is mixed with a solvent and a ceramic precursor liquid are separately prepared, and the phosphor liquid is applied first.
  • a two-component manufacturing method in which a ceramic precursor liquid is applied and fired to form a transparent ceramic film may be used.
  • the ceramic precursor liquid can be impregnated into the phosphor film by applying the ceramic precursor liquid, and then the ceramic precursor liquid can be sufficiently fired.
  • the wavelength converter 6 having a high intensity can be obtained.
  • the two-component manufacturing method is not limited to the above, and the ceramic precursor liquid may be applied without applying drying after the phosphor liquid is applied, or the ceramic precursor liquid and the phosphor liquid may be sprayed simultaneously. Good.
  • a thin film layer 7 for sealing the wavelength conversion unit 6 with a silicone resin is formed using a dispenser.
  • the wavelength conversion unit 6 is formed on the LED element 3 with the transparent ceramic material containing the phosphor, the emitted light from the LED element 3,
  • the transparent ceramic material has a silsesquiski having a composition formula represented by (R—SiO 3/2 ) n.
  • the thickness of the wavelength conversion part 6 is set to 5 to 200 ⁇ m, so that it is difficult to generate cracks, has high heat resistance, light resistance and translucency, and ensures the phosphor A light emitting device including a thin film that can be held can be obtained. Therefore, a high-luminance light-emitting device can be manufactured using such a light-emitting device.
  • the silsesquioxane contain the cage structure silsesquioxane, it is possible to obtain a light emitting device in which the peelability of the wavelength conversion unit 6 including the phosphor is suppressed.
  • the transparent ceramic material further contains a layered clay mineral and inorganic fine particles, thereby further suppressing the ease of peeling of the wavelength conversion unit 6 including the phosphor and further appropriately converting the phosphor to the wavelength conversion unit 6.
  • a light emitting device dispersed therein can be obtained.
  • the wavelength conversion part 6 is formed by spray-coating a solution obtained by diluting silsesquioxane with a predetermined solvent, light emission including the wavelength conversion part 6 that is easily uniform and excellent in heat resistance and does not cause cracks. A device can be obtained.
  • the transparent ceramic thin film (transparent ceramic layer) made of silsesquioxane encapsulating the phosphor can be protected. Can be further suppressed.
  • white light is emitted by applying a phosphor that emits yellow light fluorescence to a blue LED chip.
  • white light may be emitted by mixing and applying phosphors emitting red, blue, and green fluorescence to LED chips that emit ultraviolet light.
  • a phosphor coating solution was prepared by mixing the synthesized silsesquioxane with 5 times the weight of YAG phosphor and 10 times the weight of isopropyl alcohol. And this fluorescent substance coating liquid was apply
  • the layered silicate mineral is 0.3 times the weight of smectite and the inorganic fine particles by weight. After adding 0.3 times the amount of silicon oxide, transparent ceramic layers having a thickness of 10 ⁇ m and 100 ⁇ m were formed, respectively.
  • This silsesquioxane is 5 times the weight of YAG phosphor, 10 times the weight of isopropyl alcohol, 0.3 times the weight of smectite, and 0.3 times the weight ratio.
  • a phosphor coating solution was prepared by adding the above silicon oxide. This phosphor coating solution was applied onto an LED substrate provided with a blue LED by a spray gun.
  • the LED substrate coated with the phosphor coating solution was transferred to a firing furnace and baked at 130 ° C. for 30 minutes to form a transparent ceramic layer containing the phosphor.
  • the film thickness of the applied phosphor coating solution was changed by adjusting the spray time (spray time) and spray speed per unit area with a spray gun. Specifically, for Comparative Example 3, Examples 7 to 10, and Comparative Example 4, the film thicknesses were 3 ⁇ m, 5 ⁇ m, 10 ⁇ m, 100 ⁇ m, 200 ⁇ m, and 250 ⁇ m, respectively.
  • Example 11 In the step of forming the transparent ceramic layer in Example 9, a transparent ceramic layer having a thickness of 100 ⁇ m was formed without adding smectite and silicon oxide when preparing the phosphor coating solution.
  • Example 12 A phosphor coating solution was prepared by mixing 0.3 part by weight of smectite, 0.3 part by weight of silicon oxide, and 10 parts by weight of isopropyl alcohol with respect to 5 parts by weight of YAG phosphor. And this fluorescent substance coating liquid was apply
  • the LED substrate was transferred to a baking furnace and baked at 130 ° C. for 30 minutes, thereby forming a phosphor layer having a thickness of 100 ⁇ m.
  • silsesquioxane synthesized through the same steps as in Example 1 was applied from above the phosphor layer with a spray gun. This LED substrate was again transferred to a firing furnace and baked at 130 ° C. for 30 minutes, thereby forming a transparent ceramic layer having a thickness of 5 ⁇ m on the phosphor layer.
  • Summary Table 1 shows the film configuration of the transparent ceramic layer formed by the transparent ceramic layer forming steps of Examples 1 to 12 and Comparative Examples 1 to 6 and the evaluation of the film properties.
  • a light-emitting device having a transparent ceramic layer having suitable film properties can be obtained by forming a transparent ceramic layer containing phosphor in a range of 5 ⁇ m or more and 200 ⁇ m or less using silsesquioxane. Produced.
  • the present invention can be used for manufacturing a light emitting device using a light emitting element and a phosphor, and a light emitting device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

La présente invention concerne un dispositif électroluminescent pouvant être protégé de l'occurrence de fissures pendant la formation d'une partie d'étanchéité. Un dispositif électroluminescent est pourvu d'un élément électroluminescent et d'un mince film transmettant la lumière formé sur l'élément électroluminescent. Le mince film transmettant la lumière est composé d'un matériau céramique contenant du phosphore. Le matériau céramique est obtenu par combustion d'un silsesquioxane présentant une formule de composition représentée par (R-SiO3/2)n. Le mince film transmettant la lumière présente une épaisseur allant de 5 à 200 μm.
PCT/JP2011/080122 2010-12-28 2011-12-26 Dispositif électroluminescent, procédé de fabrication d'un dispositif électroluminescent et liquide de revêtement WO2012090961A1 (fr)

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JP2014179384A (ja) * 2013-03-13 2014-09-25 Mtek-Smart Corp Ｌｅｄの製造方法
WO2014170271A1 (fr) * 2013-04-19 2014-10-23 Osram Opto Semiconductors Gmbh Procédé de fabrication d'une pluralité de puces semi-conductrices émettant un rayonnement
JP2018056552A (ja) * 2016-08-05 2018-04-05 マブン オプトロニックス カンパニー リミテッドＭａｖｅｎ Ｏｐｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． 耐湿性チップスケールパッケージ発光素子
EP3358381A4 (fr) * 2015-09-29 2018-10-03 Panasonic Intellectual Property Management Co., Ltd. Élément de conversion de longueur d'onde et dispositif électroluminescent

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