WO2012073196A1 - Rouleau de transport - Google Patents
Rouleau de transport Download PDFInfo
- Publication number
- WO2012073196A1 WO2012073196A1 PCT/IB2011/055375 IB2011055375W WO2012073196A1 WO 2012073196 A1 WO2012073196 A1 WO 2012073196A1 IB 2011055375 W IB2011055375 W IB 2011055375W WO 2012073196 A1 WO2012073196 A1 WO 2012073196A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transport roller
- substrate
- transport
- guide region
- roller according
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G39/00—Rollers, e.g. drive rollers, or arrangements thereof incorporated in roller-ways or other types of mechanical conveyors
- B65G39/02—Adaptations of individual rollers and supports therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
Definitions
- the invention relates to a transport roller of a roller transport system for the transport of at least one planar silicon substrate through a tempered process chamber of a photovoltaic substrate processing plant, in which the silicon substrate is processed during its passage through the process chamber.
- Transport rollers of this type are widely used in the prior art.
- the transport rollers are usually cylinders, on the lateral surface of which the silicon substrates rest.
- a disadvantage of such cylindrical transport rollers is that the silicon substrates on the transport rollers are relatively easy to move in the transport plane and therefore sometimes deviations from the desired transport direction occur.
- Another disadvantage of such cylindrical transport rollers arises when used in high-temperature furnaces, when the surface of the transport rollers is dirty. Such contamination can be caused, for example, by the abrasion of metal pastes with which the silicon substrates used in the photovoltaic industry can be coated. Since the lateral surface of cylindrical transport rollers is in large-area contact with the silicon substrates transported thereon, contamination, for example metal contamination, can be transmitted to the silicon substrates. This can damage the silicon substrates.
- a transport roller of the aforementioned type wherein the transport roller is profiled to form at least one substrate guide region formed integrally with the transport roller, the at least one substrate guide region having lateral end regions on which the silicon substrate rests and which have a larger diameter than that between the two Having lying end portions intermediate regions of the substrate guide region, so that contact of the support side of the silicon substrate with the transport roller is prevented or minimized in this intermediate region, without the transport roller has an interruption for this purpose.
- This transport roller thus has, for each silicon substrate to be transported on it, a substrate guide region on which the transport of the silicon substrates takes place.
- the transport roller has a larger diameter at the edges or the end regions of this substrate guide region than in the middle or the intermediate regions of the substrate guide region. It is thereby achieved that the silicon substrates rest only with their edges on the end regions of the substrate guide regions and the center of the silicon substrate has no contact with the transport roller due to the smaller diameter of the transport roller in the center of the substrate guide region.
- the smaller diameter in the center or in the intermediate regions of the substrate guide region serves to avoid friction between the silicon substrate and the transport roller in this region.
- this intermediate region can be used to transport substrate fragments which are less likely to occur.
- the transport roller has at least two substrate guide regions, each separated by at least one region of increased diameter, for forming at least two parallel substrate guide tracks of the roller transport system through the process chamber.
- the transport roller has at least two substrate guide regions next to one another, at least two silicon substrates can be transported and processed simultaneously at the same time.
- a higher number of substrate guide regions on a transport roller a higher number of silicon substrates can accordingly be transported and processed side by side on this transport roller.
- the number and size of the substrate guide regions on the transport rollers can be adapted to the silicon substrates used and to the process chamber to be used.
- the lateral end regions of the at least one substrate guide region each have an outwardly diameter-increasing slope or concave curvature.
- the concave curvature has a larger increase in diameter at the edge of the substrate guide area than the inner area of the concave curvature.
- the slope extends at an angle of inclination between 3 ° and 45 ° to the axis of rotation of the transport roller. Tilt angles below 3 ° have been found to be ineffective experimentally, and angles of tilt in excess of 45 ° have proven to be too great a burden on the edges of the silicon substrates.
- the slope runs at an angle of inclination of 6 ° to the axis of rotation of the transport roller.
- An inclination angle of 6 ° has proven to be the optimum angle for the support of the silicon substrates.
- a secure substrate transport takes place at this angle, on the other hand no particle formation is observed.
- the lateral end regions of the at least one substrate guide region each have a diameter which increases in a stepwise outward direction for supporting silicon substrates of different widths.
- the transport roller can be used for transporting different widths of substrate types. As a result, retooling in a manufacturing environment with two different substrate sizes can be avoided.
- the intermediate regions of the at least one substrate guide region lying between the end regions each have a constant diameter.
- the intermediate region lying between the end regions of a substrate guide region has a mechanical function in the storage of the rolls. Furthermore, this intermediate region serves in the event of a substrate fracture to transport the substrate fragments.
- this intermediate region with a constant diameter as a cylinder the production of the transport roller is particularly simple.
- the intermediate regions of the at least one substrate guide region lying between the end regions each have a diameter which decreases towards the center of the substrate guide region.
- the silicon substrates are processed on the transport roller lying in a tempered process chamber.
- the processing results of the silicon substrates are thus usually temperature-dependent.
- various effects occur.
- At the support of the silicon substrates there is a lower heat transfer resistance than in the center or in the middle of the substrate guide region, where the silicon substrates are hollow and where the heat transfer resistance increases with the distance between the silicon substrate and the transport roller.
- an energy input on silicon substrates and transport rollers for example by heating lamps or by plasmas, occurs during the processing.
- the processing result on the silicon substrates is then dependent on the location on the silicon substrate and on the temporal temperature profile at this location. Due to the reduced diameter of the center of the substrate guide region, the homogeneity of the processing result, for example a deposited layer thickness, can be optimized. In this way, then, for example, a same deposited Layer thickness in the substrate center and the substrate edge on which the silicon substrate rests reachable.
- the silicon substrate is a 156 mm silicon substrate and the transport roller has a maximum substrate support width of 156.4 mm to 157.2 mm. In a preferred embodiment of this transport roller, the maximum substrate support is 156.8 mm.
- the transport roller is formed of ceramic at least in the tempered region of the process chamber. Ceramics are dimensionally stable and durable materials that are well suited to the formation of the transport roller.
- the transport roller is formed of a heat-resistant material of at least 300 ° C.
- Many tempered process chambers have temperatures above 300 ° C and require correspondingly heat-resistant transport rollers. Therefore, the transport rollers are preferably formed of the proposed refractory material, and then they can be arbitrarily used at high or low temperatures.
- the transport roller is formed of a metal contamination-free material at least in the section of the transport roller which is provided in the tempered process chamber.
- metal diffusion is observable, that is, metal atoms migrate from one place to another.
- metal atoms could diffuse across the supports of the silicon substrates into the silicon substrates, and the metal atoms in the silicon substrates could cause damage, such as changes in electronic properties.
- materials are used which do not emanate metal atom diffusion.
- the lateral end regions of the at least one substrate guide region have a Non-stick coating and / or a roughening on.
- a non-stick coating and / or by roughening the adhesion of particles to the transport rollers is avoided or greatly reduced, whereby the probability of the occurrence of particles on the silicon substrates with the cause in the roller transport system is reduced.
- This option is of interest, for example, if the silicon substrates have a non-abradable coating in the support area.
- the transport roller has a minimum diameter of 22 mm. At this diameter, the transport roller has sufficient mechanical stability.
- Figure 1 schematically an embodiment of an inventive
- Figure 2 schematically shows a section of a further embodiment of a transport roller according to the invention in cross section.
- FIG. 1 schematically shows an example of a transport roller 1 according to the invention in a perspective view.
- the transport roller 1 is a profiled transport roller having regions of different diameters but no interruption.
- the transport roller 1 shown has a substrate guide region 2.
- the transport roller 1 according to the invention can also have two or more substrate guide regions 2.
- the substrate guide region 2 has two lateral end regions 3, which have a larger diameter than the intermediate region 4 located between the end regions 3.
- the support of a silicon substrate 8, as shown in Figure 2 is provided.
- a distance is provided between the transport roller lateral surface in the intermediate region 4 and the silicon substrate 8.
- the transport roller 1 can au ßer the Substrat Adjusts Scheme 2 even more elements, such as bearings, have.
- the illustrated transport roller 1 is formed of a ceramic and has a temperature resistance above 300 ° C.
- the transport roller 1 shown is in various process chambers, for example in a used in the photovoltaic industry process chamber for a PECVD Si 3 N coating at 400 ° C, in a process chamber used in the photovoltaic industry for baking metal pastes to produce metallic interconnects at temperatures of up to 900 ° C or in doping chambers used in the photovoltaic industry can also be used at temperatures up to 900 ° C.
- the use of the transport roller 1 according to the invention is not limited to these process chambers listed by way of example. It can, however, be used in any roller transport systems.
- FIG. 2 shows a section of a transport roller 1 according to the invention in cross section.
- This section comprises a substrate guide region 2 described above.
- the substrate guide region 2 is delimited by two end regions 3, which in the illustrated embodiment consist of two sections 3a, 3b and have a diameter increasing toward the edge of the substrate guide region 2.
- the support of a silicon substrate 8 is provided on the end regions 3 and especially on the section 3a.
- the diameter of the transport roller 1 in the portion 3 a of the end portion 3 outward Shen towards in the form of a slope, the inclination angle 5 to the rotation axis R of the transport roller is 6 °.
- the portion 3b of the end portion 3 has a larger slope, that is, a greater inclination angle to the rotation axis R.
- the slope in the end region may increase in more than two stages or the end portion 3 may have a concave curvature.
- the silicon substrate 8 rests only with its outer edges or edges on the transport roller 1 in the substrate guide region 2.
- the mechanical strength of the silicon substrate 8 decreases and it is also possible for the silicon substrate 8 to bend and thus slightly increase the contact area.
- a distance between the transport roller 1 and the silicon substrate 8 is ensured.
- the distance between the silicon substrate 8 and the transport roller 4 avoids abrasion of the silicon substrate 8.
- aluminum pastes on the side facing the transport roller 1 side of the silicon substrate 8 tend to wear because of their low temperature resistance. Silicon substrates 8 with aluminum pastes outside the end regions of the silicon substrate 8 can therefore be transported safely on the transport roller 1 according to the invention in the illustrated substrate guide region 2.
- the transport roller 1 consists in the illustrated embodiment of a ceramic, while the silicon substrate 8 is made of silicon, which has a larger thermal expansion coefficient than the ceramic.
- the substrate guide region 2 and the silicon substrate 8 are heated, therefore, the length of the silicon substrate 8 increases more than the length of the substrate guide region 2. Therefore, for a silicon substrate 156 mm wide, the substrate support width 6 is preferably 156.8 mm.
- the aspect ratios of the transport roller 1 according to the invention are not to scale, but shown schematically for easy recognition.
- undesired abrasion from the silicon substrates 8 can occur and the abrasion on the transport rollers 1 can adhere to it.
- Such problems can be counteracted by a non-stick coating on the transport rollers 1 at least in the end region 3 and / or by roughening in this area.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Rollers For Roller Conveyors For Transfer (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
L'invention concerne un rouleau de transport d'un système de transport à rouleaux pour le transport d'au moins un substrat en silicium plat à travers une chambre de traitement thermorégulée d'une installation de traitement de substrat photovoltaïque dans laquelle le substrat en silicium est traité pendant qu'il traverse la chambre de traitement. L'invention vise à fournir un rouleau de transport adapté au transport de substrats en silicium dans l'industrie photovoltaïque, ledit rouleau permettant de transporter les substrats en silicium avec fiabilité dans une direction de transport souhaitée, permettant d'éviter une usure abrasive des substrats en silicium due à leur frottement contre le rouleau de transport ou la réduisant à un degré sans conséquence et adapté à une utilisation à des températures élevées. A cet effet, l'invention propose un rouleau de transport du type cité, qui est profilé par formation d'au moins une zone de guidage de substrat réalisée d'une seule pièce avec le rouleau de transport. La ou les zones de guidage de substrat comportent des zones d'extrémité latérales, sur lesquelles repose le substrat en silicium et lesquelles présentent un diamètre supérieur à celui des zones intermédiaires de la zone de guidage de substrat situées entre les zones d'extrémité, de sorte qu'un contact entre le côté d'appui du substrat en silicium et le rouleau de transport dans cette zone intermédiaire est empêché ou réduit au minimum sans que le rouleau de transport ne présente pour cela d'interruption.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201190000241.6U CN203225240U (zh) | 2010-12-01 | 2011-11-30 | 传送辊 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202010013032.8 | 2010-12-01 | ||
DE202010013032U DE202010013032U1 (de) | 2010-12-01 | 2010-12-01 | Transportrolle |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012073196A1 true WO2012073196A1 (fr) | 2012-06-07 |
Family
ID=43603800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2011/055375 WO2012073196A1 (fr) | 2010-12-01 | 2011-11-30 | Rouleau de transport |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN203225240U (fr) |
DE (1) | DE202010013032U1 (fr) |
TW (1) | TWM439044U (fr) |
WO (1) | WO2012073196A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108604545A (zh) * | 2016-01-29 | 2018-09-28 | 堺显示器制品株式会社 | 输送装置和清洗装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011080202A1 (de) * | 2011-08-01 | 2013-02-07 | Gebr. Schmid Gmbh | Vorrichtung und Verfahren zur Herstellung von dünnen Schichten |
CN108945946A (zh) * | 2018-07-26 | 2018-12-07 | 常州机电职业技术学院 | 一种大型工件输送用的自对中托辊机构 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63112349A (ja) * | 1986-10-30 | 1988-05-17 | Yamaguchi Nippon Denki Kk | ウエハ−の搬送機構 |
JPH09265064A (ja) * | 1996-03-28 | 1997-10-07 | Toshiba Electron Eng Corp | 液晶表示素子用基板の搬送装置及び搬送方法 |
JP2000286320A (ja) * | 1999-03-31 | 2000-10-13 | Shibaura Mechatronics Corp | 基板搬送装置 |
WO2003054975A2 (fr) * | 2001-12-13 | 2003-07-03 | Enitecnologie S.P.A. | Four de cuisson pour dispositifs photovoltaiques |
DE102006049488A1 (de) * | 2006-10-17 | 2008-04-30 | Höllmüller Maschinenbau GmbH | Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten |
US20100220983A1 (en) * | 2009-03-02 | 2010-09-02 | Doherty Timothy R | Infrared furnace system |
-
2010
- 2010-12-01 DE DE202010013032U patent/DE202010013032U1/de not_active Expired - Lifetime
-
2011
- 2011-11-30 CN CN201190000241.6U patent/CN203225240U/zh not_active Expired - Fee Related
- 2011-11-30 WO PCT/IB2011/055375 patent/WO2012073196A1/fr active Application Filing
- 2011-12-01 TW TW100222720U patent/TWM439044U/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63112349A (ja) * | 1986-10-30 | 1988-05-17 | Yamaguchi Nippon Denki Kk | ウエハ−の搬送機構 |
JPH09265064A (ja) * | 1996-03-28 | 1997-10-07 | Toshiba Electron Eng Corp | 液晶表示素子用基板の搬送装置及び搬送方法 |
JP2000286320A (ja) * | 1999-03-31 | 2000-10-13 | Shibaura Mechatronics Corp | 基板搬送装置 |
WO2003054975A2 (fr) * | 2001-12-13 | 2003-07-03 | Enitecnologie S.P.A. | Four de cuisson pour dispositifs photovoltaiques |
DE102006049488A1 (de) * | 2006-10-17 | 2008-04-30 | Höllmüller Maschinenbau GmbH | Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten |
US20100220983A1 (en) * | 2009-03-02 | 2010-09-02 | Doherty Timothy R | Infrared furnace system |
WO2010101702A1 (fr) | 2009-03-02 | 2010-09-10 | Btu International, Inc. | Système de four infrarouge |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108604545A (zh) * | 2016-01-29 | 2018-09-28 | 堺显示器制品株式会社 | 输送装置和清洗装置 |
Also Published As
Publication number | Publication date |
---|---|
TWM439044U (en) | 2012-10-11 |
DE202010013032U1 (de) | 2011-02-17 |
CN203225240U (zh) | 2013-10-02 |
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