TWM439044U - Transport roller - Google Patents

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Publication number
TWM439044U
TWM439044U TW100222720U TW100222720U TWM439044U TW M439044 U TWM439044 U TW M439044U TW 100222720 U TW100222720 U TW 100222720U TW 100222720 U TW100222720 U TW 100222720U TW M439044 U TWM439044 U TW M439044U
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Taiwan
Prior art keywords
substrate
transfer roller
region
roller
transfer
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TW100222720U
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Chinese (zh)
Inventor
Meyer Mirko
Frigge Steffen
Staude Mirko
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Roth & Rau Ag
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Publication of TWM439044U publication Critical patent/TWM439044U/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G39/00Rollers, e.g. drive rollers, or arrangements thereof incorporated in roller-ways or other types of mechanical conveyors 
    • B65G39/02Adaptations of individual rollers and supports therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Rollers For Roller Conveyors For Transfer (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

M439044 •五、新型說明: 【新型所屬之技術領域】 本新型涉及輥傳送系統的一種傳送輥,該輥 用於將至少一個平面形的矽基片傳送通過光伏基 備的一溫度受控的處理室,所述矽基片在其被傳 述處理室的過程中在所述加工設備中被加工。 【先前技術】 習知技術中廣泛地應用了此類傳送輥。在此 輥通常是圓柱體,其罩面上放置有矽基片。這種 送輥的一缺點係,傳送輥上的矽基片較容易在傳 移動,並且從而有時會發生從所希望的傳送方向 這種圓柱形傳送輥的另一缺點係,當用在高溫爐 述傳送輥的表面受到污染。這樣的污染例如可能 塗覆光伏工業中所使用的矽基片的金屬糊劑的磨 。因爲圓柱形傳送輥的罩面與在其上傳送的矽基 面積接觸,所以可能將汙物轉移到矽基片上,例 染物。由此可能損壞矽基片》 由文獻WO 20 1 0/1 01 702還公知一種傳送輥 安裝有圓錐形地成型的多個過渡輥。藉由使用軸 輕易地在傳送輥上轉動該等過渡輥。僅出現很小 。該等過渡輥藉由其圓錐形態實現了矽基片在傳 確定的位置,並且由此使得矽基片能夠在不同速 傳送帶之間進行可靠地過渡。由於其複雜的結構 傳送系統 片加工設 送經過所 所述傳送 圓柱形傳 送平面中 的偏離。 中時,所 由於用以 損而產生 片處於大 如金屬污 ,在其上 承,可以 的摩擦力 送輥上的 度運行的 ,這種傳 -3- M439044 送輥係昂貴的部件。此外,由於採用了軸承,在較高的溫 度下使用這種輥係有問題的。 【新型內容】 因此本新型的目的係,提出一適合在光伏工業中用於 傳送矽基片的傳送輥,藉由這種傳送輥將矽基片沿著一所 希望的傳送方向進行可靠地傳送,由此避免了由於在傳送 輥上的摩擦而造成的矽基片磨損、或者把磨損減少到無關 緊要的程度,並且所述傳送輥適合在高溫使用。 該目的藉由所述類型的一種傳送輥而實現,其中在構 成至少一個與所述傳送輥一體地構成的基片引導區域的前 提下使所述傳送輥成型,其中所述至少一個基片引導區域 具有多個側向的末端區域,在該等區域上放置有矽基片並 且該等區域的直徑大於在該等末端區域之間的、所述基片 引導區域的中間區域的直徑,從而防止矽基片的支撐側在 該中間區域中與所述傳送輥的接觸或使這種接觸最小化’ 但不因此中斷所述傳送輥。 也就是,這種傳送輥對於每個應當在其上傳送的矽基 片都有一基片引導區域,在該基片引導區域上進行所述矽 基片的傳送。所述傳送輥在該等基片引導區域的邊緣或者 末端區域處具有的直徑大於所述基片引導區域的中部或者 中間區域的直徑》由此實現了 :所述矽基片僅以其邊緣或 者邊處於該等末端區域上,並且由於所述傳送輥在基片傳 送區域中央的較小的直徑,所述矽基片的中央與所述傳送 -4 - M439044 輥沒有任何接觸。藉由這種基片引導作用實現了所述矽基 片的一種可靠的傳送,其中避免了所述矽基片的滑動( Verrutschen )或者轉動。在所述基片引導區域的中央或者 中間區域中的較小的直徑起到了避免在該區域中所述矽基 片與傳送輥之間的摩擦的作用。此外該中間區域可以用於 傳送以較小的槪率出現的基片斷片(Substratbruchstiicken )° 在根據本新型的傳送輥的一擴展中,所述傳送輥具有 對應地由一有較大直徑的區域分離的至少兩個基片引導區 域,以便構成通過所述處理室的輥傳送系統的至少兩個平 行的基片引導軌道。藉由設置至少兩個彼此相鄰的基片引 導區域,可以同時彼此相鄰地傳送和加工至少兩個矽基片 。在一傳送輥上的基片引導區域數量較大的情況下,對應 地可以在該傳送輥上彼此相鄰地傳送和加工較大數量的矽 基片。在此,在所述傳送輥上的基片引導區域的數量和大 小可以適配於所採用的矽基片和要使用的處理室。 在根據本新型的傳送輥的一優選實施方式中,所述至 少一個基片引導區域的該等側向的末端區域各自具有一向 外地直徑增大的斜坡或者凹形的彎曲。所述凹形的彎曲在 所述基片引導區域的邊緣上所具有的直徑的增加程度大於 所述凹形的彎曲的內部區域。由此實現了,所述矽基片的 一邊緣位置在所述基片引導區域中與在一中央位置相比是 在能量上更加不利的。由此強迫所述矽基片在重力下緩和 地進入所述基片引導區域內部的中央位置。 M439044 在根據本新型的傳送輥的一有利實施方式中,所 坡以對所述傳送輥的旋轉軸線在3。至45。之間的傾刹 而延伸。實驗表明,小於3。的傾斜角度沒有作用,而 45°的傾斜角度對所述矽基片的邊緣造成過大的負荷。 在根據本新型的傳送輥的一特別優選的實施方式 所述斜坡以對所述傳送輥的旋轉軸線爲6°的傾斜角度 伸。已證實6°的傾斜角度係用於支撐矽基片的最佳角 在該角度下,一方面進行了可靠的基片傳送,而另一 沒有觀察到顆粒的產生。 在本新型的一擴展中,所述至少一個基片引導區 該等側向的末端區域相應地具有階梯狀地向外增大的 ,以便支撐不同寬度的矽基片。在該實施方式中,所 送輥可以用於傳送不同寬度的基片類型。由此可以避 具有兩種不同基片尺寸的製造環境下的改裝工作。 在根據本新型的傳送輥的一簡單的實施方式中, 至少一個基片引導區域的、相應地處於所述末端區域 的中間區域具有恒定的直徑。處於一基片傳送區域的 末端區域之間的中間區域在支承該等輥時具有一機械 功能。此外在基片斷裂的緊急事故的情況下,該中間 還起到傳送基片斷片的作用。在該中間區域構成爲一 恒定的圓柱體時,所述傳送輥的製造係特別簡單的。 在根據本新型的傳送輥的一擴展中,所述至少一 片引導區域的、相應地置於所述末端區域之間的該等 區域具有朝向所述基片引導區域的中部而縮小的直徑 述斜 角度 大於 中, 而延 度。 方面 域的 直徑 述傳 免在 所述 之間 該等 性的 區域 直徑 個基 中間 。所 -6- M439044 述矽基片放在所述傳送輥上,在一溫度受控的處理室中加 工。因此所述矽基片的加工結果總是與溫度相關的。在調 節矽基片的溫度時出現了不同的效果。在所述矽基片的支 撐物處存在的換熱熱阻(Warmeiibergangswiderstand )小 於所述基片引導區域的中央或者中部,在此所述矽基片係 懸空(hohl )放置的並且在此換熱熱阻隨著所述矽基片與 所述傳送輥之間的間距而增大。在加工過程中,還可以例 如藉由加熱燈或者藉由電漿在所述矽基片和傳送輥上進行 能量輸入。於是,所述矽基片的加工結果取決於所述矽基 片的位置以及在該位置上的時間溫度曲線。藉由減小所述 基片引導區域中部的直徑可以優化處理結果的均勻性,例 如所沉積的層厚度的均勻性。於是,以此方式例如可以實 現在基片中央和在基片邊緣中上相同的沉積層厚度。 在根據本新型的一有利的實施例中,所述矽基片係一 種156 mm的矽基片,而所述傳送輥具有156.4 mm至 157.2 mm的最大基片支撐寬度。在所述傳送輥的一優選 的實施方式中,所述傳送輥的最大基片支撐寬度爲156.8 mm ° 在本新型的另一變體中,所述傳送輥至少在所述處理 室的溫度受控的區域中由陶瓷構成。陶瓷係形狀穩定且持 久耐用的材料,較好地適於構成所述傳送輥。 在本新型的一優選的實施方式中,所述傳送輥用一具 有至少高達300。(:的耐熱性的材料構成。許多溫度受控的 處理室具有30 0t以上的溫度並且需要對應地耐熱性的傳 M439044 送輥。因此所述傳送輥優選地由所提出的耐熱性材料構成 ,於是在這種情況下它在高溫或者低溫下都可以使用。 在本新型的一有利的實施例中,所述傳送輥至少在設 置於溫度受控的處理室中的傳送輥部分中由一無金屬污染 物的材料構成。在高溫度下尤其可以觀察到金屬擴散效應 ,也就是說,金屬原子從一個位置向另一個位置遷移。在 採用由金屬製造的傳送輥時,例如金屬原子可以通過所述 矽基片的支撐物擴散至所述矽基片中,其中所述金屬原子 可能在所述矽基片中引起損害,例如引起電子特性的改變 。作爲金屬擴散源,不僅要考慮金屬的傳送輥,而且還要 考慮到在其中金屬只是組成部分或者僅以痕量存在的材料 。因此優選的是採用完全不會從中出現金屬擴散的材料》 在根據本新型的傳送輥的一有益的擴展中,所述至少 一個基片引導區域的該等側向的末端區域具有一防黏合塗 層和/或一粗糖化處理(Aufrauhung)。藉由一防黏合塗層 和/或藉由粗糙化處理避免了或大幅度地減少了顆粒在所 述傳送輥上的黏附作用,從而減少由輥傳送系統造成的、 顆粒出現在矽基片上的槪率。當矽基片在該支撐區域中具 有一不可磨損的塗層時,上述選項係有意義的。 在本新型的一優選的實施方式中,所述傳送輥具有 2 2 mm的最小直徑。在該直徑的情況下,所述傳送輥具有 足夠的機械穩定性。 【實施方式】 -8- M439044 圖1用透視圖示意性地示出了根據本新型的傳送輥1 的一實例。所述傳送輥1係一成型的或者結構化的( strukturierte )傳送輥’它具有多個直徑不同但無間斷的 區域。所示的傳送輥1有一基片引導區域2。在另一圖中 沒有示出的實施方式中,根據本新型的傳送輥1也可以具 有兩個或者多個基片引導區域2。所述基片引導區域2有 兩個側向的末端區域3,該等區域具有的直徑大於處在該 等末端區域3之間的中間區域4的直徑。如在圖2中所示 ,在所述末端區域3上設有矽基片8的支撐物。相對地, 在中間區域4中的傳送輥罩面與所述矽基片8之間設有一 間距。在所述基片引導區域2之外,所述傳送輥1還可以 具有其它的零件,例如軸承。 圖示的傳送輥1由陶瓷製造並且有300°C以上的耐高 溫性。所示的傳送輥1可以用在不同的處理室中,例如在 光伏工業中採用的一用於在400°C進行PECVD-Si3N4塗覆 的處理室中、在光伏工業中採用的一用於在高達900°C下 焙燒金屬糊劑以產生金屬導軌(Leitbahnen )的處理室中 或者還可以在光伏工業中採用的一同樣處於高達900°C的 摻雜室中。然而根據本新型的傳送輥1的應用不限於舉例 說明的該等處理室。相反,本新型其可以在任意的輥傳送 系統中得到應用。 在圖2中用橫截面示出了一根據本新型的傳送輥1的 截面。該截面包含一上述的基片引導區域2。該基片引導 區域2由兩個末端區域3限定,這兩個末端區域在所示的 -9- M439044 實施例中由兩個部分3a和3b組成,並且具有朝向基片引 導區域2的邊緣而增加的直徑。在末端區域3上,具體是 在部分3a上設有矽基片8的支撐物。 在圖2所示的實施例中,傳送輥1的直徑在末端區域 3的部分3a中以一斜坡的形式向外地增大,該斜坡對旋轉 軸線R的傾斜角度5爲6°。末端區域3的部分3b有一較 大的斜坡,也就是說,對旋轉軸線R有一較大的傾斜角度 。在根據本新型的傳送輥1的另一圖中沒有示出的實施方 式中,所述斜坡還可以在所述末端區域中以兩個以上的階 梯的形式增大,或者所述末端區域3可以有一凹形的彎曲 。矽基片8僅以其外邊或者邊緣在所述基片引導區域2中 置於傳送輥1上。矽基片8的機械強度隨溫度而減弱,並 且還有可能的是,矽基片8彎曲並且由此稍稍加大該支撐 區域。在該等末端區域3之間的中間區域4中卻保證了傳 送輥1與矽基片8之間的一間距。藉由在矽基片8與傳送 輥4之間的這個間距避免了矽基片8的磨損。 在矽基片8的、朝向傳送輥1的側面上的鋁糊劑由於 其較低的耐高溫性而易於磨損。矽基片8 (具有在矽基片 8的末端區域之外的鋁糊劑)可以在所示的基片傳送區域 2中在根據本新型的傳送輥1上可靠地傳送。 在圖示的實施例中·,傳送輥1由陶瓷構成,而矽基片 8由矽構成,其熱膨脹係數大於陶瓷。因此,在基片引導 區域2和矽基片8升溫時,矽基片8的長度比基片引導區 域2的長度增加得更多。因此,對於寬度156 mm的矽基 -10- M43.9044 片而言,基片支撐寬度6優選的是156. 在圖2中,根據本新型的傳送輥1 比例示出,而是爲了好識別而示意地畫 的矽基片8以及在末端區域3上矽基片 中存在的塗層,可能出現不希望的矽基 可能導致磨損物黏附在傳送輥1上。這 至少在末端區域3中在傳送輥1上的-φ 藉由在該區域中的粗糙化處理來應對。 【圖式簡單說明】 圖1 用透視圖示出根據本新型的 式;並且 圖2 用橫截面圖示意性地示出根 的另一實施方式的一截面。 【主要元件符號說明】 1 :傳送輥 2 :基片引導區域 3 :末端區域 3 a、3 b :部分 4 :中間區域 5 :傾斜角 6 :基片支撐寬度 8 :砂基片 R :旋轉軸線 8 mm β 的長度關係沒有按 出。取決於所採用 8的所述支撐區域 片8的磨損,並且 樣的問題可以藉由 一防黏合塗層和/或 傳送輥的一實施方 據本新型的傳送輥 -11 -M439044 • V. New description: [New technical field] The present invention relates to a transfer roller for a roller transport system for transporting at least one planar ruthenium substrate through a temperature controlled process of a photovoltaic substrate The chamber is processed in the processing apparatus during its being passed through the processing chamber. [Prior Art] Such a transfer roller is widely used in the prior art. Here, the rolls are usually cylindrical with a ruthenium substrate placed on the cover. A disadvantage of such a feed roller is that the ruthenium substrate on the transfer roller is relatively easy to move, and thus another disadvantage of such a cylindrical transfer roller from the desired conveyance direction sometimes occurs when used at high temperatures. The surface of the conveying roller is contaminated. Such contamination may, for example, be applied to the grinding of a metal paste of a ruthenium substrate used in the photovoltaic industry. Since the cover of the cylindrical transfer roller is in contact with the area of the ruthenium substrate conveyed thereon, it is possible to transfer the dirt onto the ruthenium substrate, the article. As a result, it is also known from the document WO 20 1 0/1 01 702 that a conveying roller is fitted with a plurality of transition rollers which are formed in a conical shape. The transition rolls are easily rotated on the transfer rolls by using a shaft. It only appears very small. The transition rolls achieve a defined position of the ruthenium substrate by its conical configuration and thereby enable the ruthenium substrate to reliably transition between different speed belts. Due to its complex structure, the transport system is designed to traverse the deflection in the transport cylindrical transport plane. In the middle, the -3- M439044 delivery roller is an expensive component because the sheet is subjected to a large amount of metal contamination and can be fed by a frictional force on the roller. In addition, the use of such rollers at higher temperatures is problematic due to the use of bearings. [New content] Therefore, the object of the present invention is to provide a transfer roller suitable for transporting a ruthenium substrate in the photovoltaic industry, by which the ruthenium substrate is reliably transported in a desired transport direction. Thereby, the wear of the ruthenium substrate due to the friction on the transfer roller is avoided, or the wear is reduced to an insignificant extent, and the transfer roller is suitable for use at a high temperature. This object is achieved by a transfer roller of the type described, wherein the transfer roller is formed under the premise that at least one substrate guiding region is formed integrally with the transfer roller, wherein the at least one substrate is guided The region has a plurality of lateral end regions on which the ruthenium substrate is placed and the diameter of the regions is greater than the diameter of the intermediate region of the substrate guide region between the end regions, thereby preventing The support side of the ruthenium substrate contacts or minimizes contact with the transfer roller in this intermediate region 'but does not thereby interrupt the transfer roller. That is, such a transfer roller has a substrate guiding region for each of the ruthenium substrates to be transferred thereon, on which the transfer of the ruthenium substrate is performed. The transfer roller has a diameter at an edge or an end region of the substrate guiding regions that is larger than a diameter of a middle portion or an intermediate portion of the substrate guiding region. Thus, the ruthenium substrate is only edged or The edges are on the end regions, and due to the smaller diameter of the transfer roller in the center of the substrate transfer area, the center of the cymbal substrate does not have any contact with the transfer-4 - M439044 roll. A reliable transfer of the rafter substrate is achieved by such substrate guiding, wherein the sliding of the rafter substrate or rotation is avoided. The smaller diameter in the central or intermediate portion of the substrate guiding area serves to avoid friction between the ruthenium substrate and the transfer roller in this area. Furthermore, the intermediate region can be used to transport a base segment which is produced at a low rate. In an extension of the transport roller according to the invention, the transport roller has a correspondingly larger diameter region. The separated at least two substrate guiding regions are configured to constitute at least two parallel substrate guiding tracks of the roller transport system through the processing chamber. By providing at least two substrate guiding regions adjacent to each other, at least two ruthenium substrates can be simultaneously transferred and processed adjacent to each other. In the case where the number of substrate guiding regions on a conveying roller is large, a correspondingly large number of ruthenium substrates can be conveyed and processed adjacent to each other on the conveying roller. Here, the number and size of the substrate guiding areas on the transfer rolls can be adapted to the ruthenium substrate used and the processing chamber to be used. In a preferred embodiment of the transfer roller according to the present invention, the lateral end regions of the at least one substrate guiding region each have a slope or a concave curvature that increases in diameter. The concave curvature has a diameter increase on the edge of the substrate guiding region that is greater than the concave curved inner region. It is thereby achieved that an edge position of the cymbal substrate is more energy inferior in the substrate guiding area than in a central position. The ruthenium substrate is thereby forced to gently enter the central position inside the substrate guiding region under gravity. M439044 In an advantageous embodiment of the conveying roller according to the invention, the slope is at 3 to the axis of rotation of the conveying roller. To 45. The tilt between the brakes extends. Experiments have shown that it is less than 3. The angle of inclination has no effect, and the angle of inclination of 45 causes an excessive load on the edge of the cymbal substrate. In a particularly preferred embodiment of the transport roller according to the invention, the ramp extends at an oblique angle of 6° to the axis of rotation of the transport roller. It has been confirmed that the inclination angle of 6° is the optimum angle for supporting the enamel substrate. At this angle, reliable substrate transfer is performed on the one hand, and no particle generation is observed on the other. In an extension of the novel, the at least one substrate guiding region, the lateral end regions, respectively, have a stepped outwardly enlarged shape to support the 矽 substrate of different widths. In this embodiment, the feed rolls can be used to transport substrate types of different widths. This makes it possible to avoid retrofitting in a manufacturing environment with two different substrate sizes. In a simple embodiment of the transport roller according to the invention, the intermediate region of the at least one substrate guiding region, correspondingly in the end region, has a constant diameter. The intermediate portion between the end regions of a substrate transfer area has a mechanical function when supporting the rolls. In addition, in the case of an emergency in which the substrate is broken, the intermediate also functions as a transfer substrate piece. The manufacture of the transfer rolls is particularly simple when the intermediate portion is formed as a constant cylinder. In an extension of the transport roller according to the present invention, the regions of the at least one guiding region that are correspondingly disposed between the end regions have a diameter that is reduced toward the middle of the substrate guiding region. The angle is greater than medium, and the degree of elongation. The diameter of the domain is described as being intermediate between the diameters of the regions between the two. The -6-M439044 substrate was placed on the transfer roller and processed in a temperature controlled processing chamber. Therefore, the processing results of the ruthenium substrate are always temperature dependent. Different effects occur when adjusting the temperature of the ruthenium substrate. The heat exchange heat resistance (Warmeiibergangswiderstand) present at the support of the ruthenium substrate is smaller than the central or middle portion of the substrate guiding region, where the ruthenium substrate is placed in a hoh and is exchanged there The thermal resistance increases with the spacing between the ruthenium substrate and the transfer roller. During the processing, energy input can also be carried out on the crucible substrate and the transfer roller, for example by means of a heat lamp or by means of plasma. Thus, the processing of the ruthenium substrate depends on the position of the ruthenium substrate and the time temperature profile at that location. The uniformity of the processing results can be optimized by reducing the diameter of the middle portion of the substrate guiding region, such as the uniformity of the deposited layer thickness. Thus, in this way, for example, the same deposited layer thickness can be achieved in the center of the substrate and in the edge of the substrate. In an advantageous embodiment according to the present invention, the tantalum substrate is a 156 mm tantalum substrate and the transfer roller has a maximum substrate support width of 156.4 mm to 157.2 mm. In a preferred embodiment of the transfer roller, the maximum substrate support width of the transfer roller is 156.8 mm. In another variation of the present invention, the transfer roller is subjected to at least the temperature of the processing chamber. The controlled area consists of ceramic. Ceramics are materials that are dimensionally stable and durable, and are well suited to form the transfer rolls. In a preferred embodiment of the present invention, the transfer roller has a use of at least up to 300. (The composition of the heat resistant material. Many temperature controlled processing chambers have a temperature of 30 Torr or more and require a corresponding heat resistance of the transfer M439044. Therefore, the transfer roller is preferably composed of the proposed heat resistant material, In this case, it can be used at either high or low temperatures. In an advantageous embodiment of the invention, the transfer roller is at least in the portion of the transfer roller disposed in the temperature controlled processing chamber. Material composition of metal contaminants. In particular, metal diffusion effects can be observed at high temperatures, that is, metal atoms migrate from one position to another. When a transfer roll made of metal is used, for example, a metal atom can pass through The support of the substrate is diffused into the ruthenium substrate, wherein the metal atom may cause damage in the ruthenium substrate, for example, causing a change in electronic properties. As a metal diffusion source, not only metal transport but also metal transfer is considered. Roller, but also consider the material in which the metal is only a component or only in trace amounts. Therefore it is preferred to use no Material from which metal diffusion occurs. In a beneficial development of the transfer roller according to the invention, the lateral end regions of the at least one substrate guiding region have an anti-adhesion coating and/or a roughing treatment (Aufrauhung). The adhesion of the particles on the transfer roller is avoided or substantially reduced by an anti-adhesive coating and/or by roughening treatment, thereby reducing the occurrence of particles caused by the roller transport system. The enthalpy ratio on the ruthenium substrate. The above options are significant when the ruthenium substrate has a non-abrasive coating in the support region. In a preferred embodiment of the present invention, the transfer roller has a 2 2 mm In the case of this diameter, the conveying roller has sufficient mechanical stability. [Embodiment] -8- M439044 FIG. 1 schematically shows a conveying roller 1 according to the present invention in a perspective view. An example of the transfer roll 1 is a formed or structured transfer roll having a plurality of different but uninterrupted areas. The transfer roll 1 is shown as having a substrate guiding area. 2. In an embodiment not shown in another figure, the transfer roller 1 according to the present invention may also have two or more substrate guiding regions 2. The substrate guiding region 2 has two lateral ends Zone 3 having a diameter greater than the diameter of the intermediate zone 4 between the end zones 3. As shown in Figure 2, a support for the raft substrate 8 is provided on the end zone 3. In contrast, a spacing is provided between the transfer roll cover in the intermediate portion 4 and the cymbal substrate 8. The transfer roll 1 may have other parts in addition to the substrate guide area 2. For example, bearings. The illustrated transfer roll 1 is made of ceramic and has a high temperature resistance above 300 ° C. The transfer roll 1 shown can be used in different processing chambers, such as one used in the photovoltaic industry for 400 °C in a PECVD-Si3N4 coated processing chamber, used in the photovoltaic industry for processing a metal paste at up to 900 ° C to produce a metal rail (Leitbahnen) or in the photovoltaic industry One used in a doping chamber up to 900 ° CHowever, the application of the transfer roller 1 according to the present invention is not limited to the processing chambers exemplified. Instead, the present invention can be applied in any roller conveyor system. A cross section of a conveying roller 1 according to the present invention is shown in cross section in Fig. 2. The section includes a substrate guiding area 2 as described above. The substrate guiding region 2 is defined by two end regions 3, which in the illustrated embodiment -9-M439044 are composed of two portions 3a and 3b and have an edge facing the substrate guiding region 2 Increased diameter. On the end region 3, in particular, a support for the ruthenium substrate 8 is provided on the portion 3a. In the embodiment shown in Fig. 2, the diameter of the conveying roller 1 is outwardly increased in the portion 3a of the end portion 3 in the form of a slope which is inclined at an angle of 6 to the rotation axis R. The portion 3b of the end region 3 has a relatively large slope, that is, a large inclination angle to the rotation axis R. In an embodiment not shown in another diagram of the transport roller 1 according to the present invention, the ramp may also be increased in the end region in the form of more than two steps, or the end region 3 may There is a concave curvature. The ruthenium substrate 8 is placed on the transfer roller 1 only in its outer peripheral edge or edge in the substrate guide region 2. The mechanical strength of the ruthenium substrate 8 is weakened with temperature, and it is also possible that the ruthenium substrate 8 is bent and thereby the support region is slightly enlarged. A spacing between the transfer roller 1 and the cymbal substrate 8 is ensured in the intermediate portion 4 between the end regions 3. This wear of the ruthenium substrate 8 is avoided by this spacing between the ruthenium substrate 8 and the transfer roller 4. The aluminum paste on the side of the enamel substrate 8 facing the conveying roller 1 is liable to be worn due to its low temperature resistance. The ruthenium substrate 8 (having an aluminum paste outside the end region of the ruthenium substrate 8) can be reliably conveyed on the transfer roller 1 according to the present invention in the substrate transfer region 2 shown. In the illustrated embodiment, the transfer roller 1 is made of ceramic, and the ruthenium substrate 8 is made of tantalum, and its coefficient of thermal expansion is larger than that of ceramic. Therefore, the length of the ruthenium substrate 8 is increased more than the length of the substrate guide region 2 when the substrate guide region 2 and the ruthenium substrate 8 are heated. Therefore, for a 15610-M43.9044 piece having a width of 156 mm, the substrate support width 6 is preferably 156. In Fig. 2, the transfer roll 1 according to the present invention is shown in proportion, but for good identification. While the enamel substrate 8 which is schematically drawn and the coating present in the ruthenium substrate on the end region 3, undesired sulfhydryl groups may occur which may cause the abrasive to adhere to the conveying roller 1. This at least the -φ on the conveying roller 1 in the end region 3 is dealt with by the roughening treatment in this region. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a formula according to the present invention in a perspective view; and Fig. 2 schematically shows a cross section of another embodiment of the root in a cross-sectional view. [Main component symbol description] 1 : Transfer roller 2 : Substrate guiding region 3 : End region 3 a, 3 b : Part 4 : Intermediate region 5 : Inclination angle 6 : Substrate support width 8 : Sand substrate R : Rotation axis The length relationship of 8 mm β was not pressed out. Depending on the wear of the support region sheet 8 employed, and the problem of the sheet can be achieved by an anti-adhesive coating and/or an embodiment of the transfer roller according to the present invention.

Claims (1)

M439044 附件3¼ 100222720號專利申請案中文申請專利範圍修正本 民國101年7月23日修正 六、申請專利範圍: 1. 一種用於將至少一個平面形的矽基片(8)傳送通 過光伏基片加工設備的溫度受控的處理室的輥傳送系統之 傳送輥(1),其中該矽基片(8)在其被傳送通過該處理 室的過程中在該設備中被加工, 其特徵在於, 在構成與該傳送輥(1)—體地構成的至少一個基片 引導區域(2)的前提下使該傳送輥(1)成型,其中該至 少一個基片引導區域(2)具有多個側向的末端區域(3) ,在該等區域上放置該砍基片(8)並且該等區域所具有 的直徑大於在該等末端區域(3)之間的、該基片引導區 域(2)的中間區域(4)的直徑,從而防止或者減少了該 矽基片(8)的支撐側在該中間區域(4)中與該傳送輥( 1)的接觸,但不因此中斷該傳送輥(1)。 2·如申請專利範圍第1項所述之傳送輥,其中,該傳 送輥(1)具有相應地由至少一個具有較大直徑的區域分 離的至少兩個基片引導區域(2),以便構成通過該處理 室的'該輥傳送系統的兩個平行的基片引導軌道。 3.如申請專利範圍第1項所述之傳送輥,其中,該至 少一個基片引導區域(2)的該等側向的末端區域(3)各 自具有一向外地直徑增大的斜坡或者凹形的彎曲。 4·如申請專利範圍第3項所述之傳送輥,其中,該斜 -llr M439044 坡以對該傳送輥(1)的旋轉軸線在M439044 Annex 31⁄4 Patent Application No. 100222720 Patent Application Revision of the Chinese Patent Application Revision of the Republic of China on July 23, 101. Patent Application: 1. A method for transferring at least one planar ruthenium substrate (8) through a photovoltaic substrate a transfer roll (1) of a roll transport system of a temperature controlled processing chamber of a processing apparatus, wherein the tantalum substrate (8) is processed in the apparatus during its transport through the processing chamber, characterized in that The conveying roller (1) is formed on the premise of at least one substrate guiding region (2) integrally formed with the conveying roller (1), wherein the at least one substrate guiding region (2) has a plurality of sides End regions (3) to which the chopping substrate (8) is placed and having a diameter greater than the substrate guiding region (2) between the end regions (3) The diameter of the intermediate portion (4), thereby preventing or reducing the contact of the support side of the cymbal substrate (8) with the transfer roller (1) in the intermediate portion (4), but without interrupting the transfer roller ( 1). 2. The transfer roller of claim 1, wherein the transfer roller (1) has at least two substrate guiding regions (2) correspondingly separated by at least one region having a larger diameter to constitute The track is guided by the two parallel substrates of the roll transport system of the process chamber. 3. The transfer roller of claim 1, wherein the lateral end regions (3) of the at least one substrate guiding region (2) each have an outwardly increasing diameter slope or concave shape Bending. 4. The transfer roller of claim 3, wherein the oblique-llr M439044 slope is at the axis of rotation of the transfer roller (1) 角度(5)而延伸。 5·如申請專利範圍第4項所述之傳送輥,其中,該斜 坡以對該傳送輥(1)的旋轉軸線爲6。的傾斜角度(5)而 延伸。 6·如申請專利範圍第1項所述之傳送輥,其中,該至 少一個基片引導區域(.2)的該等側向的末端區域(3)各 自具有階梯式地向外增大的直徑,以便支撐不同寬度的矽 7. 如申請專利範圍第1項所述之傳送輥,其中,該至 少一個基片引導區域(2)的、相應地位於該等末端區域 (3 )之間的該等中間區域(4 )具有恒定的直徑。 8. 如申請專利範圍第1項所述之傳送輥,其中,該至 少一個基片引導區域(2)的、相應地位於該等末端區域 (3)之間的該等中間區域(4)具有朝向該基片引導區域 (2)的中部而縮小的直徑。 9. 如申請專利範圍第1項所述之傳送輥,其中,該矽 基片(8)係一種156 mm的矽基片,而該傳送輥(1)的 最大基片支撐寬度(6)爲從156.4 mm至U7.2 mm。 10. 如申請專利範圍第9項所述之傳送輥,其中,該 最大基片支撐寬度(6)爲156.8 mm。 11. 如申請專利範圍第1項所述之傳送輥,其中,該 傳送輥(1)至少在該處理室的溫度受控的區域中是由陶 瓷構成的。 -13" M439044 _____ _.?.窆3„修正 補充 12. 如申請專利範圍第1項所述之傳送輥’其中’該 傳送輥(1)由具有至少高達300 °C的耐熱性的材料構成。 13. 如申請專利範圍第1項所述之傳送輥,其中,該 傳送輥(1)至少在設置於該溫度受控的處理室中的傳送 輥(1)部分上由一無金屬污染物的材料構成。 14. 如申請專利範圍第1項所述之傳送輥,其中,該 至少一個基片引導區域(2)的該等側向的末端區域(3) ^ 具有一防黏合塗層和/或一粗糙化處理。 15. 如申請專利範圍第1至14項中任一項所述之傳送 輥,其中,該傳送輥(1)有22 mm的最小直徑。Extend from angle (5). 5. The transfer roller of claim 4, wherein the slope is 6 on the axis of rotation of the transfer roller (1). The angle of inclination (5) extends. 6. The transfer roller of claim 1, wherein the lateral end regions (3) of the at least one substrate guiding region (.2) each have a stepped outwardly increasing diameter The conveying roller of claim 1, wherein the at least one substrate guiding region (2) is correspondingly located between the end regions (3) The intermediate region (4) has a constant diameter. 8. The transfer roller of claim 1, wherein the intermediate regions (4) of the at least one substrate guiding region (2) correspondingly between the end regions (3) have A reduced diameter toward the middle of the substrate guiding area (2). 9. The transfer roller of claim 1, wherein the ruthenium substrate (8) is a 156 mm ruthenium substrate, and the maximum substrate support width (6) of the transfer roller (1) is From 156.4 mm to U7.2 mm. 10. The transfer roller of claim 9, wherein the maximum substrate support width (6) is 156.8 mm. 11. The transfer roller of claim 1, wherein the transfer roller (1) is made of ceramic at least in a temperature controlled region of the processing chamber. -13" M439044 _____ _.?. 窆3 „Repaired Supplement 12. The transfer roller as described in claim 1 wherein the transfer roller (1) consists of a material having a heat resistance of at least up to 300 °C. 13. The transfer roller of claim 1, wherein the transfer roller (1) is made of a metal-free contaminant at least on a portion of the transfer roller (1) disposed in the temperature-controlled processing chamber. 14. The transfer roll of claim 1, wherein the lateral end regions (3) of the at least one substrate guiding region (2) have an anti-adhesive coating and The conveying roller according to any one of claims 1 to 14, wherein the conveying roller (1) has a minimum diameter of 22 mm.
TW100222720U 2010-12-01 2011-12-01 Transport roller TWM439044U (en)

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JP2000286320A (en) * 1999-03-31 2000-10-13 Shibaura Mechatronics Corp Substrate transfer apparatus
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