WO2012063524A1 - 分割スパッタリングターゲット及びその製造方法 - Google Patents
分割スパッタリングターゲット及びその製造方法 Download PDFInfo
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- WO2012063524A1 WO2012063524A1 PCT/JP2011/065951 JP2011065951W WO2012063524A1 WO 2012063524 A1 WO2012063524 A1 WO 2012063524A1 JP 2011065951 W JP2011065951 W JP 2011065951W WO 2012063524 A1 WO2012063524 A1 WO 2012063524A1
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- protective
- protective member
- target
- sputtering target
- backing plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Definitions
- the present invention relates to a split sputtering target obtained by joining a plurality of target members, and more particularly to a split sputtering target suitable when the target member is made of an oxide semiconductor.
- a sputtering method has been widely used in manufacturing electronic parts such as information equipment, AV equipment, and home appliances.
- a display device such as a liquid crystal display device has a semiconductor such as a thin film transistor (abbreviation: TFT).
- TFT thin film transistor
- the element is formed by a sputtering method. This is because the sputtering method is extremely effective as a method for forming a thin film constituting a transparent electrode layer or the like with a large area and high accuracy.
- an oxide semiconductor typified by IGZO In—Ga—Zn—O
- IGZO In—Ga—Zn—O
- a sputtering target of an oxide semiconductor used for sputtering since the material is ceramic, it is difficult to configure a large-area target with a single target member. Therefore, a large-area oxide semiconductor sputtering target is manufactured by preparing a plurality of oxide semiconductor target members having a certain size and bonding them onto a backing plate having a desired area (for example, Patent Documents). 1).
- a Cu backing plate is usually used, and a low-melting-point solder having good thermal conductivity, for example, an In-based metal is used for joining the backing plate and the target member.
- a low-melting-point solder having good thermal conductivity for example, an In-based metal is used for joining the backing plate and the target member.
- a large-area Cu backing plate is prepared, the backing plate surface is divided into a plurality of sections, and an oxide having an area suitable for the section A plurality of semiconductor target members are prepared. Then, a plurality of target members are arranged on the backing plate, and all target members are joined to the backing plate by using an In-based or Sn-based metal low melting point solder. In this bonding, considering the difference in thermal expansion between Cu and the oxide semiconductor, the adjacent target members are adjusted so that a gap of 0.1 mm to 1.0 mm is formed at room temperature. Has been.
- a backing is formed from the gap between the target members during the sputtering process.
- Cu which is a constituent material of the plate, is also sputtered and mixed into the oxide semiconductor thin film to be formed.
- Cu in the thin film has a mixing amount of several ppm level, but its influence is extremely large for the oxide semiconductor.
- the field effect mobility in the TFT element characteristics corresponds to the gap between the target members.
- the present invention has been made in the background as described above, and is a sputtering target having a large area, and a backing plate obtained by sputtering a split sputtering target obtained by joining a plurality of target members.
- An object of the present invention is to propose a split sputtering target capable of effectively preventing the constituent materials of the above from being mixed into a thin film to be formed.
- the present invention provides a split sputtering target formed by bonding a plurality of target members on a backing plate with a low melting point solder, along a gap formed between the bonded target members.
- the protective plate is provided on the backing plate. According to the present invention, the surface of the backing plate is not exposed in the gap formed between the target members joined on the backing plate, and effectively prevents the constituent material of the backing plate from being sputtered. It becomes possible.
- the protector in the present invention covers the backing plate surface exposed in the gap formed between the target members joined on the backing plate, and sputtering a substance that adversely affects the thin film to be formed. Sometimes it has the effect of not generating from the gap.
- a protective body a tape-shaped protective member is disposed on the backing plate surface, a substance that serves as a protective body is applied by plating, sputtering, or the like, or the surface of the backing plate itself is oxidized to form an oxide film.
- the protector is preferably provided with a tape-shaped protective member.
- Examples of the material for such a protective body include substances that do not adversely affect the thin film to be formed, for example, all or part of the elements constituting the composition of the target member, alloys containing these elements, and oxides. Things can be used.
- a substance that can suppress the sputtering phenomenon inside the gap during sputtering for example, a substance having a larger volume resistance than the target member, that is, a high resistance substance can be used as the protector.
- a high-resistance substance it is preferable that the volume resistivity ( ⁇ ⁇ cm) of the high-resistance substance has a value that is 10 times or more the volume resistivity of the target member.
- the chemical composition of the material is substantially different from the chemical composition of the low melting point solder used for bonding to the backing plate.
- metal indium when metal indium is used as the low melting point solder, it means that the protective body at that time is not metal indium.
- indium metal of low melting point solder may remain in the gap between the target members, but when the indium remaining in the gap is solidified, the surface may be oxidized.
- the metal indium of the low melting point solder used for bonding solidifies in the gap, it is difficult to form a uniform oxide film on the surface of the indium. It is not possible to achieve the same effect as.
- the divided sputtering target in the present invention is a plate-like or cylindrical one.
- the target of the plate-like sputtering target is a plate-like backing plate in which a plurality of plate-like target members having a square surface are arranged and bonded together.
- the cylindrical sputtering target is a cylindrical backing plate having a plurality of cylindrical target members (hollow cylinders) penetrated and arranged in a multi-stage shape in the column axis direction of the cylindrical backing plate, or A target is obtained by joining a plurality of curved target members obtained by vertically dividing a hollow cylinder in the cylinder axis direction to the outer surface of the cylindrical backing plate in the circumferential direction.
- This plate-like or cylindrical divided sputtering target is frequently used in a large-area sputtering apparatus.
- the present invention is intended for plate-like and cylindrical shapes, it does not prevent application to other shapes of the split sputtering target, and the shape of the target member is not limited.
- the composition of the target member can also be applied to oxide semiconductors such as IGZO and ZTO, metals such as transparent electrodes (ITO) and Al, and the composition of the target member is not limited.
- the protective body in the present invention is preferably a metal foil of any one of Zn, Ti, and Sn, an alloy foil containing 80% by mass or more of any one or more of Zn, Ti, and Sn, or a ceramic sheet or a polymer sheet.
- a metal foil or ceramic sheet With such a metal foil or ceramic sheet, the reactivity with the low melting point solder of In-based or Sn-based metal is low, and in the case of forming an oxide semiconductor, a minute amount is deposited in the formed oxide semiconductor thin film. Even if it mixes in, it can reduce the influence on a TFT element characteristic compared with Cu.
- the polymer sheet is a high-resistance material, the sputtering phenomenon in the gap between the target members is suppressed during sputtering, and adverse effects on the thin film to be formed can be prevented.
- the ceramic sheet an alumina or silica-based sheet can be used.
- synthetic resin materials such as phenol resin, melamine resin, epoxy resin, urea resin, vinyl chloride resin, polyethylene and polypropylene, and general-purpose plastics such as polyethylene, polyvinyl chloride, polypropylene and polystyrene Examples thereof include semi-general plastic materials such as materials, polyvinyl acetate, ABS resin, AS resin, and acrylic resin.
- engineering plastics such as polyacetal, polycarbonate, modified polyphenylene ether (PPE), and polybutylene terephthalate
- super engineering plastics such as polyarylate, polysulfone, polyphenylene sulfide, polyether ether ketone, polyimide resin, and fluororesin
- a polyimide resin or the like is suitable for the present invention because it has a tape-like material and has high heat resistance and insulation.
- the thickness of the metal foil or ceramic sheet or polymer sheet is preferably 0.0001 mm to 1.0 mm.
- the width of the metal foil or the ceramic sheet is preferably as large as or larger than the gap formed between the target members, and in view of workability, the width is preferably 5.0 mm to 20 mm.
- a metal foil of any one of Zn, Ti and Sn, an alloy foil containing 80% by mass or more of any one of Zn, Ti and Sn, a ceramic sheet or a polymer sheet is disposed on the backing plate, It can be attached using a melting point solder or a conductive double-sided tape.
- the protective body in the present invention preferably has a structure in which a tape-shaped first protective member and a tape-shaped second protective member are laminated.
- a structure in which tape-shaped protective members are laminated it is possible to easily manufacture the divided sputtering target according to the present invention, and the first protective member and the second protective member according to the material of the target member and the backing plate.
- the material for the member can be appropriately selected and applied.
- the tape widths of the first protective member and the second protective member may be the same or different.
- the protective body of this laminated structure is disposed along a gap formed between the joined target members in a state where the first protective member is on the target member side and the second protective member is on the backing plate side. Will be.
- the protective body in the present invention is provided by a tape-shaped protective member, a structure in which a first protective member having a narrow width and a second protective member having a wide width are stacked, and the second protective member is exposed at both end sides of the first protective member. It can be.
- This structure has a two-layer structure in which a narrow first protective member is stacked on a wide second protective member.
- the target member and the backing plate are joined by a low melting point solder such as In or Sn, but it is expected that the protective member and the low melting point solder react to form an alloy by heat treatment during joining.
- the low melting point solder for this bonding is used repeatedly, if the frequency of use increases, the composition of the low melting point solder will change due to alloying with the protective member, and the bonding between the target member and the backing plate will be caused. It may be insufficient or adversely affect the bonding strength and bonding area. Therefore, a material that does not react with the low melting point solder is selected for the second protection member, and a first protection member made of a material that easily reacts with the low melting point solder is provided thereon, so that the contact between the first protection member and the low melting point solder is achieved. It is possible to suppress the composition fluctuation of the low melting point solder.
- the thickness of the first protective member is preferably 0.0001 mm to 0.3 mm, and the thickness of the second protective member is 0.1 mm to 0.7 mm. Is preferred.
- the total thickness of the first protective member and the second protective member is preferably 0.3 mm to 1.0 mm.
- the width of the protective member is preferably 5 mm to 30 mm.
- the width of the first protective member is preferably the same as or wider than the gap formed between the target members. In consideration of properties and the like, 5 mm to 20 mm is preferable.
- the width of the wide second protective member is preferably 3 mm to 10 mm wider than the width of the first protective member.
- the protector in the present invention can have a three-row structure including a first protection member and a second protection member arranged in parallel on both ends of the first protection member.
- the both end sides of the first protection member refer to both end sides extending in the longitudinal direction of the tape-like first protection member.
- the thickness of the first protective member and the second protective member is preferably 0.0001 mm to 1.0 mm.
- the width of the first protective member is preferably the same as or larger than the gap formed between the target members. In consideration of workability, the width of the second protective member is preferably 3 mm. ⁇ 10 mm is preferred.
- the second protective member is made of a single metal of Cu, Al, Ti, Ni, Zn, Cr, Fe, or any one of these.
- the metal foil made of the alloy including the first protective member the first protective member is preferably formed of a single metal, an alloy, or a ceramic material containing one or more elements included in the target member.
- the target member in the present invention is composed of an oxide semiconductor, it is preferable that the first protective member is formed of a single metal, an alloy, or a ceramic material made of one of the elements contained in the oxide semiconductor that constitutes the target member.
- the first protection member is an oxidation containing at least one of In, Zn, Al, Ga, Zr, Ti, Sn, and Mg. It is preferable to form the ceramic material made of an oxide or nitride. Since these ceramic materials have the same composition as the target member, or a part of the composition is the same as the target member, even if they are mixed into the film during film formation, the influence on the TFT element characteristics is small. It is.
- a ceramic material such as ZrO 2 or Al 2 O 3 has a high resistance, the intrusion of plasma into the divided portion is suppressed during sputtering, and Zr or Al sputtering can be effectively prevented.
- the ceramic material include In 2 O 3 , ZnO, Al 2 O 3 , ZrO 2 , TiO 2 , IZO, and IGZO, and ZrN, TiN, AlN, GaN, ZnN, and InN.
- the present invention can be applied by forming the first protective member using a vapor deposition method, a sputtering method, a plasma spraying method, a coating method, or the like. .
- the oxide semiconductor can be made of an oxide containing at least one of In, Zn, and Ga.
- IGZO In—Ga—Zn—O
- GZO Ga—Zn—O
- IZO In—Zn—O
- ZnO ZnO
- the oxide semiconductor includes at least one of Sn, Ti, Ba, Ca, Zn, Mg, Ge, Y, La, Al, Si, and Ga. What consists of an oxide can be used. Specifically, Sn—Ba—O, Sn—Zn—O, Sn—Ti—O, Sn—Ca—O, Sn—Mg—O, Zn—Mg—O, Zn—Ge—O, Zn—Ca -O, Zn-Sn-Ge-O, or an oxide in which Ge of these oxides is changed to Mg, Y, La, Al, Si, or Ga can be given.
- the oxide semiconductor can use what consists of an oxide containing any one or more of Cu, Al, Ga, and In. Specific examples include Cu 2 O, CuAlO 2 , CuGaO 2 , and CuInO 2 .
- sputtering prevents the constituent material of the backing plate from being mixed into the thin film to be formed. be able to.
- segmentation sputtering target schematic perspective view The schematic plan view of the backing plate of this embodiment.
- the schematic sectional drawing which has arrange
- the schematic sectional drawing which arranged the protector of a two-layer structure.
- the schematic sectional drawing which has arrange
- the schematic sectional drawing which arranged the protector of a three-row structure.
- the plate-like sputtered target of the present embodiment is obtained by arranging and bonding a plurality of target members 20 to a Cu backing plate 10 as shown in FIG. A gap 30 of 0.1 mm to 1.0 mm is formed between these target members.
- a protective body 50 is attached to the surface of the backing plate 10 at a position corresponding to a gap formed between the target members.
- the protector can be attached to the surface of the backing plate 10 using a low melting point solder or a conductive double-sided tape.
- the six target members are arranged and joined as shown in FIG. 1 using In or Sn low melting point solder.
- In or Sn low melting point solder In or Sn low melting point solder
- FIG. 3 shows a schematic cross-sectional view when a single-layer protective body is used.
- the single-layer protective body 50 has a thickness of 0.0001 mm to 1.0 mm, and is formed of a metal foil of any one of Zn, Ti, and Sn, and an alloy foil containing 80% by mass or more of any one of Zn, Ti, and Sn. ing.
- the In low-melting-point solder 60 is present on both ends of the single-layer protective body 50.
- FIG. 4 shows a schematic cross-sectional view of a two-layered protective body in which tape-shaped protective members having the same width are laminated.
- the protective body 50 having a two-layer structure includes a first protective member 51 and a second protective member 52.
- the width of the first protective member 51 and the second protective member is 5 mm to 20 mm in consideration of workability and the like.
- the low melting point solder 60 of In is present on both end sides of the first protection member 51 and the second protection member 52.
- FIG. 5 shows a schematic cross-sectional view of a two-layered protective body in which protective members having different widths are laminated.
- the protective body 50 having a two-layer structure includes a first protective member 51 and a second protective member 52.
- the width of the first protective member 51 is set to 5 mm to 20 mm in consideration of workability, and the width of the second protective member 52 is 8 to 30 mm.
- the width of the second protective member is larger than that of the first protective member.
- the width is wider.
- the 1st protection member 51 is arrange
- the width of the exposed portion is 1.5 mm to 5 mm on each side of both ends.
- the low melting point solder 60 of In is present on both end sides of the first protection member 51 and the second protection member 52.
- the second protective member 52 shown in FIGS. 4 and 5 has a thickness of 0.1 mm to 0.7 mm, and is a metal foil of any one of Cu, Al, Ti, Ni, Zn, Cr, and Fe, any one or more of these. It is formed with the alloy foil containing.
- the first protective member 51 shown in FIGS. 4 and 5 has a thickness of 0.0001 mm to 0.3 mm, and includes a single metal composed of one kind of elements constituting the target member 20 and one or more kinds of elements contained in the target member. It is made of an alloy or a ceramic material of any of In 2 O 3 , ZnO, Al 2 O 3 , ZrO 2 , TiO 2 , IZO, and IGZO.
- the two-layered protective body shown in FIGS. 4 and 5 can be produced, for example, by spraying Al 2 O 3 and ZrO 2 ceramics on a 0.3 mm thick Cu foil by plasma spraying.
- a 0.0001 mm thick ZrO 2 ceramic layer could be formed on the surface of a 0.3 mm thick Cu foil using ZrO 2 powder having an average particle size of 200 ⁇ m as a raw material.
- Al 2 O 3 it could be produced in the same manner.
- FIG. 6 shows a schematic cross-sectional view when a three-row structure protector is used.
- the three-row protection body 50 has a structure in which second protection members 52 are arranged in parallel on both sides of both ends extending in the longitudinal direction of the first protection member 51.
- the width of the first protective member 51 is 5 mm to 20 mm in consideration of workability and the like, and the width of the second protective member 52 is 3 to 10 mm.
- the second protective member 51 is disposed at both ends of the first protective member 51, and the In low melting point solder 60 is present on one end side of the second protective member 52.
- the thicknesses of the first protective member and the second protective member are 0.0001 mm to 1.0 mm.
- the protection body 50 in FIG. 3 and the first protection member 51 in FIGS. 4 to 6 are formed from the high resistance material. That is, in FIGS. 3 to 6, it is important that the protective body (first protective member) has the maximum volume resistivity value among the target member, the backing plate, the low melting point solder, and the protective body (first protective member). become.
- a split sputtering target using such a high-resistance material protector is effective in both direct current sputtering and high frequency sputtering, but is particularly suitable for direct current sputtering.
- the manufactured split sputtering target was manufactured by joining an oxygen-free copper backing plate (thickness 30 mm, length 630 mm, width 710 mm) and six IGZO target members (thickness 6 mm, length 210 mm, width 355 mm). In was used as the low melting point solder for bonding. The gap between the target members was 0.5 mm.
- the target member made from IGZO weighed each raw material powder of In 2 O 3 , Ga 2 O 3 , and ZnO at a ratio of 1 mol: 1 mol: 2 mol, and mixed with a ball mill for 20 hours. And after adding and mixing 8 mass% of polyvinyl alcohol aqueous solution diluted to 4 mass% as a binder with respect to the powder total amount, it shape
- the single-layer protective body two types of metal foils of Zn and Ti having a thickness of 0.3 mm were used.
- a protective body having a two-layer structure in which protective members having different widths are laminated a Cu metal foil having a thickness of 0.3 mm and a width of 20 mm is used as a second protective member, and a Zn foil having a thickness of 0.1 mm and a width of 15 mm is used as a first belt protective member.
- a laminate was used.
- a IGZ film having a thickness of 0.0001 mm (width: 15 mm) formed as a first protective member by sputtering using a 1: 1 alloy target was used.
- Cu metal foil having a thickness of 0.3 mm and a width of 20 mm is used as a second protective member
- ZrO 2 having a thickness of 100 ⁇ m is used as a first protective member by sputtering. What coat
- Each split sputtering target was produced and a sputter evaluation test was performed.
- an IGZO thin film having a thickness of 14 ⁇ m was formed on a non-alkali glass substrate (manufactured by Nippon Electric Glass) using a sputtering apparatus (SMD-450B, manufactured by ULVAC).
- SMD-450B sputtering apparatus
- substrate formed into a film
- interval part were cut out just above the gap
- the cut substrate was subjected to sputter evaluation by measuring the amount of Cu mixed in the IGZO thin film by atomic absorption analysis. The results are shown in Table 1.
- a sputter evaluation test was similarly performed on a split sputtering target in which no protective body was disposed in the gap portion.
- the amount of Cu mixed into the IGZO thin film was less than 2 ppm (below the detection limit of atomic absorption analysis).
- the amount of Cu mixed into the IGZO thin film was 19 ppm at the gap.
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Abstract
Description
20 ターゲット部材
30 間隙
50 保護体
51 第1保護部材
52 第2保護部材
60 低融点ハンダ
Claims (10)
- バッキングプレート上に、複数のターゲット部材を低融点ハンダにより接合して形成される分割スパッタリングターゲットにおいて、
接合されたターゲット部材間に形成される間隙に沿って、バッキングプレートに保護体を設けたことを特徴とする分割スパッタリングターゲット。 - 保護体は、Zn、Ti、Snいずれかの金属箔、またはZn、Ti、Snのいずれか一種以上を80質量%以上含む合金箔、もしくはセラミックシート、或いは高分子シートである請求項1に記載の分割スパッタリングターゲット。
- 保護体は、テープ状の第1保護部材とテープ状の第2保護部材とを積層したものである請求項1に記載の分割スパッタリングターゲット。
- 保護体は、狭幅の第1保護部材と広幅の第2保護部材とが積層されたものであり、第1保護部材の両端側に第2保護部材が露出した構造とした請求項3に記載の分割スパッタリングターゲット。
- 保護体は、テープ状の第1保護部材と、第1保護部材の両端側に並列配置されたテープ状の第2保護体部材とからなる請求項1に記載の分割スパッタリングターゲット。
- 第2保護部材が、Cu、Al、Ti、Ni、Zn、Cr、Feのいずれかの単金属またはこれらのいずれかを含む合金からなる金属箔であり、
第1保護部材が、ターゲット部材に含まれる元素の一種以上を含む単金属または合金もしくはセラミック材料或いは高分子材料で形成された請求項3~請求項5いずれかに記載の分割スパッタリングターゲット。 - 第1保護部材が、In、Zn、Al、Ga、Zr、Ti、Sn、Mgのいずれか一種以上を含む酸化物又は窒化物からなるセラミック材料により形成された請求項3~請求項6いずれかに記載の分割スパッタリングターゲット。
- 複数のターゲット部材を低融点ハンダによりバッキングプレート上に接合して形成する分割スパッタリングターゲットの製造方法において、
接合されるターゲット部材間に形成される間隙に沿って、バッキングプレートに保護体を設け、
複数のターゲット部材を低融点ハンダによりバッキングプレート上に接合することを特徴とする分割スパッタリングターゲットの製造方法。 - 請求項8に記載の分割スパッタリングターゲットの製造方法に用いる保護体であって、
テープ状の第1保護部材と第2保護部材とを積層したことを特徴とする保護体。 - 請求項8に記載の分割スパッタリングターゲットの製造方法に用いる保護体または請求項9に記載の分割スパッタリングターゲットの製造方法に用いる保護体の第1保護部材であって、
ターゲット部材を構成する材料の体積抵抗率の10倍以上の体積抵抗率を有する材質からなる保護体または第1保護部材。
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