WO2012043751A1 - 樹脂組成物 - Google Patents
樹脂組成物 Download PDFInfo
- Publication number
- WO2012043751A1 WO2012043751A1 PCT/JP2011/072435 JP2011072435W WO2012043751A1 WO 2012043751 A1 WO2012043751 A1 WO 2012043751A1 JP 2011072435 W JP2011072435 W JP 2011072435W WO 2012043751 A1 WO2012043751 A1 WO 2012043751A1
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- WIPO (PCT)
- Prior art keywords
- resin
- resin composition
- inorganic filler
- epoxy resin
- curing agent
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 71
- 229920005989 resin Polymers 0.000 claims abstract description 72
- 239000011347 resin Substances 0.000 claims abstract description 72
- 239000011256 inorganic filler Substances 0.000 claims abstract description 57
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 57
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 28
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 17
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims description 60
- 229920000647 polyepoxide Polymers 0.000 claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 28
- 239000002114 nanocomposite Substances 0.000 claims description 21
- 238000001721 transfer moulding Methods 0.000 claims description 19
- 239000000945 filler Substances 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 239000004677 Nylon Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229920001778 nylon Polymers 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 150000008065 acid anhydrides Chemical class 0.000 claims description 9
- 238000013329 compounding Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 238000004382 potting Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- 238000000748 compression moulding Methods 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 abstract description 12
- 238000001723 curing Methods 0.000 description 54
- 239000000203 mixture Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000003960 organic solvent Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- -1 aliphatic amines Chemical class 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000004843 novolac epoxy resin Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- MOVRNJGDXREIBM-UHFFFAOYSA-N aid-1 Chemical compound O=C1NC(=O)C(C)=CN1C1OC(COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C(NC(=O)C(C)=C2)=O)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C(NC(=O)C(C)=C2)=O)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C(NC(=O)C(C)=C2)=O)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)COP(O)(=O)OC2C(OC(C2)N2C3=C(C(NC(N)=N3)=O)N=C2)CO)C(O)C1 MOVRNJGDXREIBM-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000003733 fiber-reinforced composite Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- 229920000007 Nylon MXD6 Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical class NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- UTTHLMXOSUFZCQ-UHFFFAOYSA-N benzene-1,3-dicarbohydrazide Chemical class NNC(=O)C1=CC=CC(C(=O)NN)=C1 UTTHLMXOSUFZCQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012783 reinforcing fiber Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/19101—Disposition of discrete passive components
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a resin composition capable of obtaining a cured resin having improved heat resistance and glass transition temperature.
- semiconductor modules such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) that can operate even in large-capacity, high-voltage environments are widely used in consumer and industrial devices.
- IGBTs Insulated Gate Bipolar Transistors
- MOSFETs Metal Oxide Semiconductor Field Effect Transistors
- the heat generated by the mounted semiconductor elements reaches high temperatures. The reason may be, for example, when the power handled by the semiconductor element is high, when the degree of integration of the circuit in the semiconductor element is high, or when the operating frequency of the circuit is high.
- the insulating sealing resin constituting the semiconductor module needs a glass transition temperature (Tg) equal to or higher than the heat generation temperature.
- the molecular structure of the epoxy resin is selected to improve the crosslink density, thereby increasing the heat resistance of the cured product and improving the Tg. It has been However, the method of increasing the heat resistance by changing the molecular structure of the epoxy resin to improve the crosslinking density may lower the performance such as viscosity characteristics and hygroscopicity required for the insulating sealing resin.
- an epoxy resin composition for fiber reinforced composite materials for expressing high mechanical strength in a high temperature environment which is a resin composition containing silica fine particles, bifunctional epoxy resin, polyfunctional epoxy resin and amine type curing agent as essential components.
- a thing is known (patent document 1).
- this resin composition is impregnated into reinforcing fibers and cured to obtain desired physical properties as a fiber-reinforced composite material.
- an insulating seal for sealing an electronic component such as a semiconductor element
- it can not be used as a termination resin composition.
- Resins having such insulation properties are widely used for the purpose of insulation and internal protection in devices that may generate a high heating temperature, such as fuel cells, electric parts such as solar cells, and electric products. Also in those applications, those having a high glass transition temperature are required.
- the present invention has been made to solve the above problems, and a resin composition for obtaining a cured resin having improved heat resistance and glass transition temperature while maintaining the molecular structure of the resin as such, and such a resin
- An object of the present invention is to provide a semiconductor module sealed with a composition.
- the present invention provides, according to one embodiment, a resin composition, which is selected from a) a thermosetting resin and a curing agent, or b) a thermoplastic resin, And an inorganic filler having a particle diameter of 1000 nm or less. It is preferable that the compounding ratio of the inorganic filler in the resin composition is 0.1 to 10% by weight with respect to the mass of the entire resin composition.
- the inorganic filler is at least one selected from the group consisting of Al 2 O 3 , SiO 2 , BN, AlN, and Si 3 N 4 , and preferably has an average particle diameter of 1 to 1000 nm.
- the resin is a thermosetting resin and curing agent
- the thermosetting resin is an epoxy resin, -NH 3 wherein the curing agent in the molecular structure, -NH 2, -NH, either A curing agent or an acid anhydride curing agent comprising a molecule containing one or more functional groups, wherein the inorganic filler preferably has an average particle diameter of 100 nm or less.
- the epoxy resin is preferably a trifunctional epoxy resin.
- a cured nanocomposite resin wherein the above-described resin is obtained by heat curing a resin composition which is a thermosetting resin and a curing agent.
- the average distance between the fillers is preferably 1 to 200 nm.
- the resin is a thermoplastic resin
- the thermoplastic resin is nylon
- the inorganic filler has an average particle diameter of 1000 nm or less.
- a cured nanocomposite resin which is obtained by curing the above-mentioned resin composition in which the resin is a thermoplastic resin.
- the average distance between the fillers is preferably 1 to 2000 nm.
- a semiconductor module comprising: a metal block; an insulating layer laminated to one surface of the metal block; and at least the other surface of the metal block. It is a semiconductor module which seals the assembly which comprises one circuit element with the above-mentioned resin composition. It is preferable that sealing with the resin composition is performed by potting, transfer molding, or liquid transfer molding.
- the insulating layer is dispersed in an epoxy resin and the epoxy resin, and is dispersed in a first inorganic filler having an average particle diameter of 1 to 99 nm and the epoxy resin.
- a second inorganic filler having an average particle diameter of, wherein the first and second inorganic fillers independently of each other are Al 2 O 3 , SiO 2 , BN, AlN, and Si. And at least one selected from the group consisting of 3 N 4 , wherein the compounding ratio of the first and second inorganic fillers in the insulating material is 0.1 to 7% by weight and 80 to 95% by weight, respectively. It is preferable that it is a certain insulating material.
- a method of manufacturing a semiconductor module comprising the steps of bonding an insulating layer to one surface of a metal block, and at least one of the other surface of the metal block. The steps of mounting a circuit element, and sealing the assembly obtained by mounting the circuit element with the resin composition described above. It is preferable that the step of sealing is performed by any method of potting, transfer molding, liquid transfer molding, compression molding, or injection molding.
- the resin composition according to the present invention is also preferably used for insulation and internal protection in a semiconductor module, an electric component including a solar cell, and particularly preferably used for insulation sealing of a semiconductor module.
- the invention comprises a curing agent comprising an epoxy resin and a molecule whose molecular structure contains any one or more functional groups -NH 3 , -NH 2 , -NH.
- a curing agent comprising an epoxy resin and a molecule whose molecular structure contains any one or more functional groups -NH 3 , -NH 2 , -NH.
- It is an insulation sealing resin composition for semiconductor modules which comprises an acid anhydride system hardening agent, and an inorganic filler which has a particle size whose average particle diameter is 100 nm or less. It is preferable that the compounding ratio of the inorganic filler in the resin composition is 0.1 to 10% by weight with respect to the mass of the entire resin composition.
- the inorganic filler is at least one selected from the group consisting of Al 2 O 3 , SiO 2 , BN, AlN, and Si 3 N 4 , and preferably has an average particle diameter of 1 to 100 nm.
- the epoxy resin is preferably a trifunctional epoxy resin.
- the present invention also relates to a cured nanocomposite resin obtained by heat curing the insulating sealing resin composition for a semiconductor module.
- the invention further comprises an assembly comprising a metal block, an insulating layer laminated to one surface of the metal block, and at least one circuit element mounted to the other surface of the metal block.
- the present invention also relates to a semiconductor module sealed by the above-described insulating sealing resin composition for a semiconductor module.
- sealing with the said insulating sealing resin composition for semiconductor modules is performed by either potting, transfer molding, or liquid transfer molding.
- the insulating layer is dispersed in an epoxy resin and the epoxy resin, and the first inorganic filler having an average particle diameter of 1 to 99 nm and the epoxy resin is dispersed in an average of 0.1 to 100 ⁇ m.
- the present invention further comprises the steps of bonding an insulating layer to one surface of a metal block, mounting at least one circuit element on the other surface of the metal block, and mounting the circuit element. And sealing the assembly to be assembled with the insulating sealing resin composition for a semiconductor module described above.
- the sealing step is preferably performed by any method of potting, transfer molding, or liquid transfer molding.
- the resin composition of the present invention it is possible to obtain a nanocomposite resin cured product having improved heat resistance and Tg without changing the molecular structure of the resin.
- parts such as a semiconductor module manufactured using a resin composition of the present invention, a fuel cell, and a solar cell, can realize high temperature operation.
- the resin composition according to the first embodiment of the present invention comprises a thermosetting resin, a curing agent, and an inorganic filler.
- thermosetting resin there is no limitation on the type of thermosetting resin, but in particular, an epoxy resin is preferable.
- the epoxy resin is not particularly limited.
- a bifunctional epoxy resin such as bisphenol A epoxy resin, bisphenol F epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, bisphenol A novolac epoxy resin, bisphenol Multifunctional epoxy resins such as F novolac epoxy resins, naphthalene epoxy resins, biphenyl epoxy resins, and dicyclopentadiene epoxy resins can be used alone or in combination.
- polyfunctional epoxy resins are particularly preferable, and trifunctional epoxy resins are most preferably used.
- a curing agent those generally used as a curing agent for epoxy resin can be used.
- the curing agent it is possible to use a molecule or acid anhydride in which one or more functional groups of —NH 3 , —NH 2 , —NH, or the like are contained in the molecular structure.
- aromatic amines such as diaminodiphenylmethane and diaminodiphenyl sulfone, aliphatic amines, imidazole derivatives, guanidine-based curing agents such as dicyandiamide and tetramethylguanidine, thiourea addition amines, adipic acid dihydrazides, isophthalic acid dihydrazides, Dihydrazide-based curing agents such as dodecanoic acid dihydrazide, imidazole-based curing agents such as 2-ethyl-4-methylimidazole, methyltetrahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, hexahydrophthalic anhydride, methyl hexahydroanhydride Acid anhydride curing agents such as phthalic acid and their isomers and modifications can be used. As the curing agent, one of these may be used alone, or two
- a curing aid may be added. This is to control the curing reaction.
- Curing aids include imidazoles such as 2-ethyl-4-methylimidazole, tertiary amines such as benzyldimethylamine, aromatic phosphines such as triphenylphosphine, and Lewis acids such as boron trifluoride monoethylamine.
- a boric acid ester, an organic metal compound, an organic acid metal salt etc. can be used, it is not limited to these.
- the inorganic filler may be at least one selected from the group consisting of Al 2 O 3 , SiO 2 , BN, AlN, and Si 3 N 4 , but is not limited thereto.
- the inorganic filler is particularly preferably SiO 2 .
- the inorganic filler according to this embodiment may have an average particle size of 1 to 1000 nm, preferably 1 to 100 nm, and more preferably 3 to 50 nm. More preferably, it has an average particle size of 5 to 30 nm.
- the inorganic filler according to this embodiment using a thermosetting resin preferably has an average particle diameter of 1 to 100 nm as described above, in that a sufficient Tg improvement effect can be obtained.
- the average particle diameter refers to a value measured by a laser diffraction scattering method.
- the proportion of the inorganic filler in the resin composition is preferably 0.1 to 10% by weight, more preferably 1.5 to 6% by weight, based on 100% of the weight of the resin composition before curing.
- the proportion of the inorganic filler is less than 0.1% by weight, a sufficient Tg improvement effect may not be obtained.
- the compounding ratio of an inorganic filler exceeds 10 weight%, it may become impossible to use as a casting material by the raise of a viscosity.
- the compounding ratio of the curing agent is preferably 1 to 10% by weight based on 100% by weight of the resin composition before curing. More specifically, the blending ratio of the curing agent can be determined from the epoxy equivalent of the epoxy resin and the amine equivalent or acid anhydride equivalent of the curing agent. Even when a thermosetting resin other than an epoxy resin is used, the amount of the curing agent can be appropriately determined by those skilled in the art according to the chemical equivalents of the resin and the curing agent. When a curing aid is used, the blending ratio of the curing aid is preferably 0.1 to 5% by weight based on 100% by weight of the resin composition before curing. In addition, although the compounding ratio of each raw material of the resin composition by this embodiment was mentioned above, the remainder is the compounding ratio of thermosetting resins other than an epoxy resin or an epoxy resin.
- the step of mixing the epoxy resin and the inorganic filler at a predetermined mixing ratio, the step of dispersing the inorganic filler, and the mixture in which the inorganic filler is dispersed And the step of further kneading.
- step of dispersing the inorganic filler for example, it can be carried out using an orifice pressure passing disperser.
- the average distance between the fillers is preferably dispersed at 1 to 200 nm, more preferably 1 to 100 nm.
- the average distance between the fillers as used herein is a distance connecting the center points of two adjacent fillers, and is a value measured and calculated by observation with a transmission electron microscope (TEM).
- TEM transmission electron microscope
- the resin composition according to the present embodiment is not limited to a semiconductor element, and can be used for the purpose of insulation and internal protection in solar cells, electrical parts such as breakers, and electrical products.
- Examples of the mode of use include, but are not limited to, a sealing material and a protective film for protecting cells of a solar cell, and a cover material for a breaker.
- the nanocomposite resin cured product according to the present embodiment is obtained by curing the above resin composition. Curing can be performed in two steps. Such a nanocomposite resin cured product is manufactured integrally with the semiconductor module in the method for manufacturing a semiconductor module described later.
- the resin composition according to the second embodiment of the present invention comprises a thermoplastic resin and an inorganic filler.
- a thermoplastic resin there is no limitation on the type of thermoplastic resin, but in particular, a polyamide resin is preferable, and in particular, nylon 6, nylon 6, 6 and nylon MXD are preferable.
- the resin composition according to the second embodiment uses a thermoplastic resin and an organic solvent instead of the thermosetting resin, the curing agent, and the curing assistant in the first embodiment.
- a thermoplastic resin and an organic solvent instead of the thermosetting resin, the curing agent, and the curing assistant in the first embodiment.
- the kind of filler it can be made to be the same as that of the said 1st embodiment demonstrated.
- the particle size of the filler in the present embodiment, it is particularly preferable to use an inorganic filler having an average particle size of 1000 nm or less.
- the amount of the filler added is preferably 0.1 to 10% by weight based on the total weight of the resin composition.
- the preparation of the resin composition according to the second embodiment includes the steps of dissolving the thermoplastic resin in an organic solvent, and adding and dispersing the filler in the thermoplastic resin dissolved in the organic solvent.
- organic solvent although it depends on the type of thermoplastic resin, phenols, cresols and the like can be used. Further, in particular, when nylon is used as the thermoplastic resin, hexafluoroisopropanol is preferably used as the organic solvent.
- the dilution factor of the organic solvent is preferably 1 to 1000 times.
- the organic solvent can be evaporated from the composition.
- the average distance between the fillers is preferably dispersed at 1 to 2000 nm, more preferably 1 to 1000 nm.
- FIG. 1E is a cross-sectional view schematically showing a semiconductor module according to the present embodiment.
- the semiconductor module 10 an assembly mainly including the metal block 2, the insulating layer 3, and the circuit element 4 is sealed with the nanocomposite resin cured product 1 obtained by curing the resin composition.
- a semiconductor module 10 according to the present embodiment will be described from the viewpoint of its manufacturing method with reference to FIGS. 1 (a) to 1 (e).
- a step of bonding an insulating layer 3 to one surface of a metal block 2 a step of mounting at least one circuit element 4 on the other surface of the metal block 2, and the circuit Sealing the assembly obtained by mounting the element 4 using a resin composition.
- a metal plate is punched into a predetermined shape such as a square or a rectangle by press working to manufacture the metal block 2.
- a metal plate is punched into a predetermined shape such as a square or a rectangle by press working to manufacture the metal block 2.
- Cu or Mo can be used for the metal block 2.
- the thickness of the metal block 2 is not particularly limited, but is preferably in the range of 1.0 to 6.0 mm.
- the insulating layer 3 made of an insulating material is placed on one surface of the metal block 2 Stick these together.
- the insulating layer 3 is obtained by molding and curing an insulating material.
- the insulating material is an epoxy resin and the epoxy resin dispersed in the first inorganic filler having an average particle diameter of 1 to 99 nm and the epoxy resin dispersed therein.
- An insulating material comprising a second inorganic filler having an average particle diameter of 1 to 100 ⁇ m, wherein the first and second inorganic fillers independently of each other are Al 2 O 3 , SiO 2 , BN And at least one selected from the group consisting of AlN and Si 3 N 4 , and the blending ratio of the first and second inorganic fillers in the insulating material is 0.1 to 7% by weight and 80 to 80%, respectively. It is 95% by weight.
- the blending ratio (wt%) of each component represents wt% when the total weight of the insulating material before curing is 100%.
- the other surface of the metal block 2 is a circuit element such as a power semiconductor element or a driving IC 4 is joined by soldering.
- the soldering is preferably performed in a furnace capable of hydrogen reduction using pellet-like solder.
- the furnace capable of hydrogen reduction is used in order to improve the wettability with the solder by removing the oxide film on the surface of the metal block 2 by hydrogen reduction and activating it.
- a solder material for example, a high temperature solder such as SnPbAg or a lead-free solder such as SnAgCu is used.
- the soldering temperature is set according to the melting point of the solder.
- voids remain in the solder layers (not shown) of the power semiconductor element and the metal block, the thermal resistance becomes high, and the heat generated from the power semiconductor element can not be dissipated efficiently. Therefore, in order to prevent generation of a void, it is preferable to perform a vacuum of 10 Torr or less in a state where the solder is molten.
- the circuit element 4 and the lead frame 5 are connected by the bonding wire 6 to obtain an assembly of semiconductor elements. It is preferable to use an Al wire with a wire diameter of 125 to 500 ⁇ m as the bonding wire 6.
- the bonding wire 6 is preferably ultrasonically bonded.
- this assembly is sealed with a nanocomposite resin cured product 1 obtained by molding and curing the resin composition according to an embodiment of the present invention by a predetermined method.
- Sealing can be performed by any method of potting, transfer molding, liquid transfer molding, compression molding, or injection molding.
- the assembly shown in FIG. 2D is placed in a mold attached to the transfer molding machine, and the tablet-like resin composition is preheated with a plunger using a gold. After pouring into the mold, it is taken out of the mold immediately after being cured in several tens of seconds, and post-curing in a thermostat to complete sealing.
- the mold is preferably kept at 170 to 180 ° C. According to transfer molding, since injection molding can be performed in a short time, there is an advantage that mass production can be performed inexpensively.
- liquid transfer molding In the case of sealing by liquid transfer molding, the assembly shown in FIG. 2D is placed in a high temperature mold, and the liquid resin composition is injection molded into the mold and cured by heating. .
- the mold is kept at 170 to 180 ° C., cured in the mold, and post-cured in a thermostat to complete sealing.
- Liquid transfer molding also has the advantage of being able to be carried out in a short time and having high productivity.
- the assembly of semiconductor elements is sealed using the resin composition according to the embodiment of the present invention to obtain a semiconductor module with high heat resistance. I can do it.
- the resin composition according to the present invention and the composition of the comparative example were prepared and further heat cured to produce a nanocomposite resin cured product.
- the epoxy resin and the inorganic filler were mixed in the proportions shown in Table 1 respectively, and the inorganic filler was dispersed using an orifice pressure passing type dispersing machine.
- the curing agent was added to the mixture in which the inorganic filler was dispersed in the proportions shown in Table 1, respectively.
- the mixture was further kneaded to obtain a resin composition and a composition of a comparative example.
- the blend ratio (% by weight) in Table 1 is shown by the blend ratio (% by weight) of each component when the weight of the entire resin composition before curing is 100%.
- the glass transition temperature of the obtained nanocomposite resin cured product was evaluated by differential scanning calorimetry.
- the glass transition temperature was evaluated using a differential scanning calorimeter (manufactured by DSC 6200 SII) at a temperature rising rate of 10 ° C./min in the range of 25 to 270 ° C. under N 2 gas 35 ml / min.
- Epoxy resin 1 brand name "JER 828” made by Mitsubishi Chemical BisA type epoxy resin epoxy equivalent 194
- Epoxy resin 2 brand name "JER630” made by Mitsubishi Chemical multifunctional epoxy resin epoxy equivalent 105)
- Inorganic filler trade name "AEROSIL 200” made by Nippon Aerosil Silica Average particle size 12 nm
- Curing agent 1 brand name "JER Cure 113” made by Mitsubishi Chemical modified amine type curing agent
- Hardener 2 brand name "JER Cure 307” Mitsubishi Chemical acid anhydride hardener
- Curing aid 1 trade name "EMI 24” manufactured by Mitsubishi Chemical's imidazole curing accelerator
- Example 1 and Comparative Example 1 BisA epoxy resin was used as the epoxy resin. These formulations differ in that Example 1 is an inorganic filler and Comparative Example 1 is no inorganic filler. From Table 1, it was confirmed that the addition of the inorganic filler improves the Tg by several degrees Celsius. In each of Example 2 and Comparative Example 2, a trifunctional epoxy resin was used as the epoxy resin. These formulations differ in that Example 2 is an inorganic filler and Comparative Example 2 is no inorganic filler. From Table 1, it was confirmed that Tg is improved by 33 ° C. by adding the inorganic filler.
- Example 4 a liquid resin was applied on a quartz plate simulating a filler, and then cured to form samples of Example 4 and Example 5.
- an epoxy resin was used as the thermosetting resin
- Example 5 nylon was used as the thermoplastic resin.
- the properties exhibited by this sample simulate the interaction between the filler of the present invention and the resin in the cured resin. That is, the interaction between the quartz plate and the resin at a specific distance from the quartz plate is similar to the relationship between the filler in the cured resin of the present invention and the resin in the cured resin when viewed from a macro level However, it is considered that they fully reflect these interactions.
- the epoxy resin was 110 parts by weight of the curing agent 2 and 1 part by weight of the curing aid 1 with respect to 100 parts by weight of the epoxy resin 1 used in Example 1 above.
- the mixture ratio was used as a sample to be coated on a quartz plate.
- nylon was a sample dissolved in an organic solvent and applied to a quartz plate.
- the nylon used nylon MXD6 (made by Mitsubishi Gas Chemical Co., Ltd.), and the organic solvent used hexafluoroisopropanol.
- An epoxy resin and nylon are coated on a quartz plate and then heated to 80 to 100 ° C. to cure the resin or vaporize the organic solvent to prepare a cured film of the resin on the quartz plate, and slant the resin
- the cut sample was used as an evaluation sample.
- Example 4 and Example 5 were subjected to measurement of the glass transition temperature and the melting point by means of a nanothermal microscope manufactured by Seiko Instruments Inc. The measurement results are shown in Tables 3 and 4.
- the epoxy resin was evaluated for glass transition temperature.
- the measurement results are shown in Table 3.
- the glass transition temperature was improved by 17 ° C. by setting the thickness of the epoxy resin on the quartz plate to a distance of 200 nm to 40 nm.
- the thickness of the epoxy resin in the sample of Example 4 corresponds to the middle point of the distance between the fillers in the cured resin according to the present invention.
- the semiconductor element can be effectively sealed, which is extremely useful for manufacturing a semiconductor module, and various electric parts, It can be effectively used for the insulation and internal protection of electrical products.
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Abstract
Description
前記樹脂組成物における前記無機フィラーの配合割合が、前記樹脂組成物全体の質量に対し、0.1~10重量%であることが好ましい。
また、前記無機フィラーが、Al2O3、SiO2、BN、AlN、及びSi3N4からなる群から選択される少なくとも1つであり、1~1000nmの平均粒径を有することが好ましい。
特には、前記エポキシ樹脂が、3官能型のエポキシ樹脂であることが好ましい。
前記樹脂組成物による封止が、ポッティング、トランスファー成形、または液状トランスファー成形のいずれかにより行われたものであることが好ましい。
また、前記絶縁層が、エポキシ樹脂と、前記エポキシ樹脂に分散されており、1~99nmの平均粒径を有する第1の無機フィラーと、前記エポキシ樹脂に分散されており、0.1~100μmの平均粒径を有する第2の無機フィラーと、を含む絶縁材であって、前記第1及び第2の無機フィラーが、互いに独立して、Al2O3、SiO2、BN、AlN及びSi3N4からなる群から選択される少なくとも1つであり、前記絶縁材における前記第1及び第2の無機フィラーの配合割合が、それぞれ、0.1~7重量%及び80~95重量%である絶縁材であることが好ましい。
本発明は、さらにまた別の態様によれば、半導体モジュールの製造方法であって、金属ブロックの一方の表面に、絶縁層を張り合わせるステップと、前記金属ブロックの他方の表面に、少なくとも1つの回路素子を実装するステップと、前記回路素子を実装して得られる組立体を、前述の樹脂組成物を用いて封止するステップとを含む。 前記封止するステップが、ポッティング、トランスファー成形、液状トランスファー成形、圧縮成型、または射出成型のいずれかの方法により行われることが好ましい。
前記樹脂組成物における前記無機フィラーの配合割合が、前記樹脂組成物全体の質量に対し、0.1~10重量%であることが好ましい。
前記無機フィラーが、Al2O3、SiO2、BN、AlN、及びSi3N4からなる群から選択される少なくとも1つであり、1~100nmの平均粒径を有することが好ましい。
前記エポキシ樹脂が、3官能型のエポキシ樹脂であることが好ましい。
本発明はまた、前記半導体モジュール用絶縁封止樹脂組成物を加熱硬化させることにより得られるナノコンポジット樹脂硬化物にも関する。
本発明はさらには、金属ブロックと、前記金属ブロックの一方の表面に張り合わされた絶縁層と、前記金属ブロックの他方の表面に実装された少なくとも1つの回路素子とを含んでなる組立体を、前述の半導体モジュール用絶縁封止樹脂組成物により封止してなる半導体モジュールにも関する。
前記半導体モジュール用絶縁封止樹脂組成物による封止が、ポッティング、トランスファー成形、または液状トランスファー成形のいずれかにより行われたものであることが好ましい。
前記絶縁層が、エポキシ樹脂と、前記エポキシ樹脂に分散されており、1~99nmの平均粒径を有する第1の無機フィラーと、前記エポキシ樹脂に分散されており、0.1~100μmの平均粒径を有する第2の無機フィラーと、を含む絶縁材であって、前記第1及び第2の無機フィラーが、互いに独立して、Al2O3、SiO2、BN、AlN及びSi3N4からなる群から選択される少なくとも1つであり、前記絶縁材における前記第1及び第2の無機フィラーの配合割合が、それぞれ、0.1~7重量%及び80~95重量%である絶縁材であることが好ましい。
本発明はさらにまた、金属ブロックの一方の表面に、絶縁層を張り合わせるステップと、前記金属ブロックの他方の表面に、少なくとも1つの回路素子を実装するステップと、前記回路素子を実装して得られる組立体を、前述の半導体モジュール用絶縁封止樹脂組成物を用いて封止するステップとを含む半導体モジュールの製造方法にも関する。
前記封止するステップが、ポッティング、トランスファー成形、または液状トランスファー成形のいずれかの方法により行われることが好ましい。
2 金属ブロック
3 絶縁層
4 回路素子
5 リードフレーム
6 ボンディングワイヤ
10 半導体モジュール
エポキシ樹脂、無機フィラーを、表1にそれぞれ示す割合で混合し、オリフィス加圧通過型分散機を用いて、無機フィラーを分散させた。無機フィラーを分散させた混合物に、硬化剤を表1にそれぞれ示す割合で添加した。これをさらに混練し、樹脂組成物、及び比較例の組成物を得た。なお、表1中の配合割合(重量%)は、硬化前の樹脂組成物全体の重量を100%としたときの、各成分の配合割合(重量%)で示している。
・エポキシ樹脂1(商品名「JER828」三菱化学製 BisA型エポキシ樹脂 エポキシ当量194)
・エポキシ樹脂2(商品名「JER630」三菱化学製 多官能型エポキシ樹脂 エポキシ当量105)
・無機フィラー(商品名「AEROSIL200」日本アエロジル製 シリカ 平均粒径12nm)
・硬化剤1(商品名「JERキュア113」三菱化学製 変性アミン型硬化剤)
・硬化剤2(商品名「JERキュア307」三菱化学製 酸無水物硬化剤)
・硬化助剤1(商品名「EMI24」三菱化学製 イミダゾール硬化促進剤)
Claims (17)
- a)熱硬化性樹脂及び硬化剤、または
b)熱可塑性樹脂
から選択される樹脂と、
平均粒径が1000nm以下の粒径を有する無機フィラーと
を含んでなる、樹脂組成物。 - 前記樹脂組成物における前記無機フィラーの配合割合が、前記樹脂組成物全体の質量に対し、0.1~10重量%である、請求項1に記載の樹脂組成物。
- 前記無機フィラーが、Al2O3、SiO2、BN、AlN、及びSi3N4からなる群から選択される少なくとも1つであり、1~1000nmの平均粒径を有する、請求項1に記載の樹脂組成物。
- 前記樹脂が、熱硬化性樹脂及び硬化剤であり、前記熱硬化性樹脂がエポキシ樹脂であり、前記硬化剤が分子構造中に-NH3、-NH2、-NH、のいずれか一種、または複数の官能基が含まれる分子を含んでなる硬化剤または酸無水物系硬化剤であって、前記無機フィラーが、100nm以下の平均粒径を有する、請求項1に記載の樹脂組成物。
- 前記エポキシ樹脂が、3官能型のエポキシ樹脂である、請求項4に記載の樹脂組成物。
- 請求項4に記載の樹脂組成物を加熱硬化させることにより得られるナノコンポジット樹脂硬化物。
- フィラー間の平均距離が、1~200nmである、請求項6に記載のナノコンポジット樹脂硬化物。
- 前記樹脂が熱可塑性樹脂であり、前記熱可塑性樹脂がナイロンであって、前記無機フィラーが、1000nm以下の平均粒径を有する、請求項1に記載の樹脂組成物。
- 請求項8に記載の樹脂組成物を硬化させることにより得られるナノコンポジット樹脂硬化物。
- フィラー間の平均距離が、1~2000nmである、請求項9に記載のナノコンポジット樹脂硬化物。
- 金属ブロックと、
前記金属ブロックの一方の表面に張り合わされた絶縁層と、
前記金属ブロックの他方の表面に実装された少なくとも1つの回路素子と
を含んでなる組立体を、請求項1に記載の樹脂組成物により封止してなる半導体モジュール。 - 前記樹脂組成物による封止が、ポッティング、トランスファー成形、または液状トランスファー成形のいずれかにより行われたものである、請求項11に記載の半導体モジュール。
- 前記絶縁層が、エポキシ樹脂と、前記エポキシ樹脂に分散されており、1~99nmの平均粒径を有する第1の無機フィラーと、前記エポキシ樹脂に分散されており、0.1~100μmの平均粒径を有する第2の無機フィラーと、を含む絶縁材であって、前記第1及び第2の無機フィラーが、互いに独立して、Al2O3、SiO2、BN、AlN及びSi3N4からなる群から選択される少なくとも1つであり、前記絶縁材における前記第1及び第2の無機フィラーの配合割合が、それぞれ、0.1~7重量%及び80~95重量%である絶縁材である、請求項11に記載の半導体モジュール。
- 金属ブロックの一方の表面に、絶縁層を張り合わせるステップと、
前記金属ブロックの他方の表面に、少なくとも1つの回路素子を実装するステップと、
前記回路素子を実装して得られる組立体を、請求項1に記載の樹脂組成物を用いて封止するステップと
を含む半導体モジュールの製造方法。 - 前記封止するステップが、ポッティング、トランスファー成形、液状トランスファー成形、圧縮成型、または射出成型のいずれかの方法により行われる、請求項14に記載の製造方法。
- 半導体モジュール、太陽電池を含む電気部品における絶縁及び内部保護のために使用される、請求項1に記載の樹脂組成物。
- 半導体モジュールの絶縁封止に用いるための、請求項1に記載の樹脂組成物。
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JP2022041198A (ja) * | 2020-08-31 | 2022-03-11 | 東芝三菱電機産業システム株式会社 | レジン製造方法及び絶縁構造製造方法 |
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US20170107408A1 (en) * | 2014-07-08 | 2017-04-20 | Dow Europe Gmbh | DELAYED CURING HIGH Tg CRASH DURABLE ADHESIVE |
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