WO2012043403A1 - パターン形成方法、レジスト下層膜及びレジスト下層膜形成用組成物 - Google Patents
パターン形成方法、レジスト下層膜及びレジスト下層膜形成用組成物 Download PDFInfo
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- WO2012043403A1 WO2012043403A1 PCT/JP2011/071698 JP2011071698W WO2012043403A1 WO 2012043403 A1 WO2012043403 A1 WO 2012043403A1 JP 2011071698 W JP2011071698 W JP 2011071698W WO 2012043403 A1 WO2012043403 A1 WO 2012043403A1
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- underlayer film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
- C08G8/22—Resorcinol
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/28—Chemically modified polycondensates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Definitions
- the present invention relates to a pattern forming method by a multilayer resist process, a resist underlayer film, and a resist underlayer film forming composition.
- a pattern forming method using a multilayer resist process is becoming widespread in response to miniaturization of processing size.
- the multilayer resist process will be described.
- a resist underlayer film forming composition is applied onto a substrate, and a photoresist composition is further applied thereon.
- the mask pattern is transferred to the resist film by a reduction projection exposure apparatus (stepper) and developed with an appropriate developer to obtain a photoresist pattern.
- this pattern is transferred to the resist underlayer film by dry etching.
- a substrate with a desired pattern can be obtained.
- a multilayer resist process of three or more layers in which an intermediate layer is further provided on the surface of the resist underlayer film is employed.
- methods other than photoresist such as a nanoimprint method, are also used, for example.
- a material having a high carbon content is used for the resist underlayer film directly above the substrate.
- the carbon content is large, the etching selectivity at the time of substrate processing is improved, and more accurate pattern transfer is possible.
- a thermosetting phenol novolac resin is particularly well known.
- a composition containing an acenaphthylene-based polymer exhibits good characteristics as a lower layer film (see JP-A Nos. 2000-143937 and 2001-40293).
- This resist underlayer film becomes unnecessary after the pattern formation by etching, and is removed by ashing or the like.
- Ashing is usually a method in which oxygen plasma is generated and oxygen radicals in the plasma burn organic components in the resist underlayer film.
- the low dielectric (Low-k) material has a low resistance, so that the surface easily deteriorates or the dielectric constant increases. There is an inconvenience.
- a technique for removing the resist underlayer film using a solution has been proposed (see Japanese Patent Application Laid-Open No. 2004-177668), according to this technique, the resist underlayer film is removed after an etching process. In that case, the peelability is lowered.
- the present invention has been made based on the above-described circumstances, and can suppress the influence of a low dielectric material or the like on a substrate and can easily remove a resist underlayer film after an etching process.
- An object of the present invention is to provide a forming method, and a resist underlayer film and a composition for forming a resist underlayer film that are preferably used in such a pattern forming method.
- the resist underlayer film removing step after forming a pattern by etching on the substrate to be processed the resist underlayer film is removed with a basic solution, so that the influence on the patterned substrate is suppressed, and The resist underlayer film can be easily removed.
- At least a part of the resin having a phenolic hydroxyl group in the resist underlayer film forming step may be modified to have a quinone structure.
- the solubility with respect to the organic solvent of this resist underlayer film falls by denaturing at least one part of resin which has a phenolic hydroxyl group to a quinone structure. Therefore, according to the pattern formation method, even if the resin contained in the resist underlayer film is not cross-linked, it functions as a layer and suppresses erosion of other layers laminated by coating or the like on the upper surface of the resist underlayer film. Can do.
- the resist underlayer film can exhibit sufficient etching resistance.
- the quinone structure is modified to a phenol structure and returned to the state at the time of application, so that it is soluble in the basic solution. Therefore, the resist underlayer film can be easily removed with a basic solution.
- the above modification is preferably performed by heating.
- insolubility to an organic solvent is developed without proceeding crosslinking, and the resist underlayer film can be removed with a basic solution. It can be done more easily.
- resist underlayer film forming step and (2) resist pattern forming step includes an intermediate layer forming step of forming an intermediate layer on the upper surface side of the resist underlayer film, and (3) pattern formation In the process, the intermediate layer may be further dry etched. According to the pattern forming method, the resist underlayer film can be easily removed with a basic solution in the resist film removing step even in the case of such a multilayer resist process of three layers or four layers or more.
- the content of the cross-linking agent with respect to 100 parts by mass of the resin having a phenolic hydroxyl group in the resist underlayer film forming composition is 0 part by mass or more and 3 parts by mass or less.
- the resist underlayer film of the present invention is a resist underlayer film that is formed from a composition for forming a resist underlayer film containing a resin having a phenolic hydroxyl group, is hardly soluble in an organic solvent, and is soluble in a basic solution. . Since the resist underlayer film is hardly soluble in an organic solvent, erosion of other layers laminated on the upper surface by coating or the like can be suppressed and functions as a layer. Further, since the resist underlayer film is soluble in a basic solution, it can be easily removed with a basic solution after pattern formation while suppressing the influence on the substrate.
- the resist underlayer film has excellent solubility in an organic solvent because the phenolic hydroxyl group of the resin is modified to a quinone structure.
- the resist underlayer film can exhibit sufficient etching resistance. Furthermore, when the resist underlayer film comes into contact with the basic solution, the quinone structure is modified again to a phenol structure and becomes soluble in the basic solution. Therefore, the resist underlayer film can be easily removed with a basic solution.
- the resist underlayer film forming composition of the present invention comprises: (1) A resist underlayer film forming step of forming a resist underlayer film on the upper surface side of the substrate to be processed by applying the resist underlayer film forming composition; (2) a resist pattern forming step of forming a resist pattern on the upper surface side of the resist underlayer film; (3) Using the resist pattern as a mask, at least the resist underlayer film and the substrate to be processed are dry-etched to form a pattern on the substrate to be processed; and (4) A resist underlayer film removing step for removing the resist underlayer film on the substrate to be processed with a basic solution in this order, wherein the composition for forming a resist underlayer film comprises phenolic hydroxyl groups. It contains the resin which has.
- the resist underlayer film formed from the resist underlayer film forming composition can be easily removed after the etching step.
- the influence on the substrate can be suppressed, and the resist underlayer film after the etching process can be easily removed. Moreover, according to the resist underlayer film of the present invention, it can be easily removed with a basic solution while suppressing the influence on the substrate.
- the pattern forming method is: (1) A resist underlayer film forming step of forming a resist underlayer film on the upper surface side of the substrate to be processed by applying a composition for forming a resist underlayer film containing a resin having a phenolic hydroxyl group; (2) a resist pattern forming step of forming a resist pattern on the upper surface side of the resist underlayer film; (3) Using the resist pattern as a mask, at least the resist underlayer film and the substrate to be processed are dry-etched to form a pattern on the substrate to be processed; and (4) A resist underlayer film removing step for removing the resist underlayer film on the substrate to be processed with a basic solution in this order.
- (1 ′) includes an intermediate layer forming step of forming an intermediate layer on the upper surface side of the resist underlayer film, (3) In the pattern forming step, the intermediate layer may also be dry etched.
- the intermediate layer may also be dry etched.
- a resist underlayer film is formed on the upper surface side of the substrate to be processed by applying a resist underlayer film forming composition containing a resin having a phenolic hydroxyl group.
- the resist underlayer film forming composition is not particularly limited as long as it is a composition containing a resin having a phenolic hydroxyl group.
- a composition described later can be suitably used.
- the resin having a phenolic hydroxyl group includes a resin in which the phenolic hydroxyl group is protected with a dissociable functional group.
- the substrate to be processed is not particularly limited, and a known substrate can be used.
- an inorganic substrate is usually used.
- a silicon wafer, a wafer coated with aluminum, or the like can be used.
- the method for applying the resist underlayer film forming composition to the substrate to be processed is not particularly limited, and for example, it can be carried out by an appropriate method such as spin coating, cast coating, roll coating or the like.
- the resist underlayer film forming step at least a part of the resin having a phenolic hydroxyl group may be modified to a quinone structure.
- the solubility with respect to the organic solvent of this resist underlayer film falls by denaturing at least one part of resin which has a phenolic hydroxyl group into a quinone structure. Therefore, according to the pattern forming method, even if the resin contained in the resist underlayer film is not cross-linked, it functions as a layer and can suppress erosion of other layers laminated on the upper surface of the resist underlayer film by coating or the like. it can. Further, according to the pattern forming method, the resist underlayer film can exhibit sufficient etching resistance.
- the quinone structure is modified to a phenol structure and returned to the state at the time of application, so that it is soluble in the basic solution. Therefore, the resist underlayer film can be easily removed with a basic solution.
- This modification is performed before forming another layer (intermediate layer or resist pattern) on the upper surface of the resist underlayer film. Specifically, it may be performed on the resin in the composition before coating, or may be performed on the composition (coating film) after coating.
- the above modification is preferably performed by heating.
- the resin By modifying at least a part of the resin having a phenolic hydroxyl group to a quinone structure in this way, the resin exhibits insolubility in an organic solvent without proceeding with the crosslinking reaction, and the resist underlayer film is removed with a basic solution. Can be performed more easily.
- the heating for the modification is usually performed in the atmosphere along with the drying of the coating film after the application of the resist underlayer film forming composition to the substrate to be processed.
- the heating temperature is preferably 200 ° C. or higher and 300 ° C. or lower, more preferably 230 ° C. or higher and 270 ° C. or lower.
- the heating temperature is less than 200 ° C.
- the resin having a phenolic hydroxyl group is not sufficiently modified into the quinone structure, and the erosion of other layers laminated by coating or the like on the upper surface of the resist underlayer film is suppressed. There is a risk that it will not be possible.
- the heating temperature exceeds 300 ° C., the crosslinking reaction of the resin having a phenolic hydroxyl group proceeds and may not be easily removed with a basic solution during the resist underlayer film removal step.
- the heating time at this time is 30 seconds or more and 600 seconds or less, preferably 60 seconds or more and 240 seconds or less.
- the heating time is less than 30 seconds, the resin having a phenolic hydroxyl group is not sufficiently modified into the quinone structure, and the erosion of other layers laminated by coating or the like on the upper surface of the resist underlayer film is suppressed. There is a risk that it will not be possible.
- the heating time exceeds 600 seconds, the crosslinking reaction of the resin having a phenolic hydroxyl group proceeds and may not be easily removed with a basic solution during the resist underlayer film removal step.
- the ambient oxygen concentration at the time of heating is preferably 5% by volume or more, and more preferably 20% by volume or more.
- the oxygen concentration at the time of heating is low, the modification of the resin having a phenolic hydroxyl group to the quinone structure does not proceed sufficiently, and the characteristics necessary for the lower layer film may not be exhibited.
- the film thickness of the resist underlayer film formed in this (1) resist underlayer film forming step is not particularly limited, but is usually 0.01 ⁇ m or more and 5 ⁇ m or less.
- the resist underlayer film forming composition used in the pattern forming method of the present invention contains a resin having a phenolic hydroxyl group, and may contain other optional components such as a solvent.
- Resin having a phenolic hydroxyl group examples include novolak resins.
- novolak resins include phenols, cresols, xylenol, resorcinol, bisphenol A, phenols such as paratertiary butylphenol, paraoctylphenol, fluorene bisphenol, ⁇ -naphthol, ⁇ -naphthol, 1,5-dihydroxynaphthalene.
- examples of the resin having a phenolic hydroxyl group include those having a structural unit represented by the following formula (a).
- Ar represents a (m11 + m12 + m13 + 1) -valent aromatic group.
- R 10 is independently a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxycarbonyl group having 2 to 10 carbon atoms.
- Z 0 is each independently a single bond, a methylene group, a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, a substituted or unsubstituted arylene group having 6 to 14 carbon atoms, or a substituted or unsubstituted alkylene group It is an ether group.
- m11 represents the number of bonds in which Z 0 is bonded to Ar, and is an integer of 1 to 6.
- m12 is an integer of 0-6.
- m13 is an integer of 1 to 6. * Represents a bond.
- aromatic group at least (m11 + m12 + m13 + 1) represented by Ar, benzene-based aromatic rings such as benzene ring, naphthalene ring, anthracene ring, indene ring, fluorenylidenebiphenyl ring, furan ring, pyrrole ring, thiophene ring, phosphole
- examples include groups obtained by removing (m11 + m12 + m13 + 1) hydrogen atoms from heteroaromatic rings such as rings, pyrazole rings, oxazole rings, isoxazole rings, thiazole rings, pyridine rings, pyrazine rings, pyrimidine rings, pyridazine rings, and triazine rings.
- heteroaromatic rings such as rings, pyrazole rings, oxazole rings, isoxazole rings, thiazole rings, pyridine rings, pyrazine rings, pyrimidine rings, pyrid
- Examples of the resin having a structural unit represented by the above formula (a) include those having a structural unit represented by the following formula (a1) or formula (a2).
- R 11 and R 12 are each independently a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted alkoxyl group having 1 to 6 carbon atoms.
- Z 1 and Z 2 are each independently a single bond, a methylene group, a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, a substituted or unsubstituted arylene group having 6 to 14 carbon atoms, or a substituted or non-substituted group.
- a substituted alkylene ether group is independently a single bond, a methylene group, a substituted or unsubstituted alkylene group having 2 to 20 carbon atoms, a substituted or unsubstituted arylene group having 6 to 14 carbon atoms, or a substituted or non-substituted group.
- m1 represents the number of bonds in which Z 1 is bonded to the aromatic ring, and is an integer of 1 to 6.
- m2 is an integer of 0-6.
- m3 is an integer of 1-6.
- m4 represents the number of bonds Z 2 is bonded to the aromatic ring, and is an integer of 1 to 4.
- m5 is an integer of 0-4.
- m6 is an integer of 1 to 5.
- R 11, R 12, when Z 1 and Z 2 are a plurality of each of the plurality of R 11, R 12, Z 1 and Z 2 may be the same or different. * Represents a bond.
- m1 and m3 are each 2 or more, Z 1 and Z 2 are bonded to an aromatic ring, and the polymer having an aromatic ring has a branched structure or a network structure.
- Examples of the unsubstituted alkyl group having 1 to 6 carbon atoms in R 11 and R 12 include, for example, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, 2-methylpropyl group, 1 -Methylpropyl group, t-butyl group and the like.
- Examples of the unsubstituted alkoxyl group having 1 to 6 carbon atoms in R 11 and R 12 include, for example, methoxy group, ethoxy group, n-propoxy group, i-propoxy group, n-butoxy group, 2-methylpropoxy group, 1 -Methylpropoxy group, t-butoxy group, 2-propynyloxy group and the like.
- Examples of the unsubstituted C2-C10 alkoxycarbonyl group in R 11 and R 12 include a methoxycarbonyl group, ethoxycarbonyl group, n-propoxycarbonyl group, i-propoxycarbonyl group, n-butoxycarbonyl group, 2-methyl Examples thereof include a propoxycarbonyl group, 1-methylpropoxycarbonyl group, t-butoxycarbonyl group and the like.
- Examples of the unsubstituted aryl group having 6 to 14 carbon atoms in R 11 and R 12 include a phenyl group and a naphthyl group.
- Examples of the unsubstituted alkyl glycidyl ether group in R 11 and R 12 include a methyl glycidyl ether group, an ethyl glycidyl ether group, a propyl glycidyl ether group, and a butyl glycidyl ether group.
- the dissociative functional group represented by R is a group that dissociates in the presence of a base (for example, in a 2.38 mass% solution of tetramethylammonium hydroxide at 23 ° C.) (hereinafter referred to as “base dissociable group”). And a group that dissociates in the presence of an acid and a group that dissociates by heating during the formation of a resist underlayer film (hereinafter, also referred to as “thermally dissociable group”).
- the base dissociable group include a fluorine-containing alkylcarbonyl group, a benzyl group, and an N-imidomethyl group.
- Examples of the acid dissociable group include an alkoxycarbonyloxy group such as t-BuOCO—, and an alkoxy-substituted methyl group such as a methoxymethyl group.
- Specific examples of the alkoxy thermally dissociable group include an alkoxycarbonylmethyl group such as t-BuOCOCH 2 —.
- Examples of the unsubstituted alkylene group having 2 to 20 carbon atoms in Z 1 and Z 2 in the formula (a1) and the formula (a2) include, for example, ethylene group; 1,3-propylene group, 1,2-propylene group A propylene group such as tetramethylene group, pentamethylene group, hexamethylene group, 1-methyl-1,3-propylene group, 2-methyl-1,3-propylene group, 2-methyl-1,2-propylene group, Examples include 1-methyl-1,4-butylene group, 2-methyl-1,4-butylene group and the like.
- Examples of the unsubstituted arylene group having 6 to 14 carbon atoms in Z 1 and Z 2 include a phenylene group, a naphthylene group, an anthrylene group, and a phenanthrylene group.
- the number of carbon atoms in the alkylene moiety of the alkylene ether group in Z 1 and Z 2 is preferably 2-20.
- Specific alkylene ether groups include, for example, ethylene ether groups; propylene ether groups such as 1,3-propylene ether groups and 1,2-propylene ether groups; tetramethylene ether groups, pentamethylene ether groups, hexamethylene ether groups. Etc.
- formula (a), in (a1) and the formula (a2) as R 10, R 11, R 12 , Z 0, Z 1 and substituents which may be possessed by the groups represented by Z 2 Examples include a halogen atom, a hydroxyl group, and an aryl group having 6 to 22 carbon atoms.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- examples of the aryl group having 6 to 22 carbon atoms include a phenyl group and a naphthyl group.
- the Mw of the resin having a phenolic hydroxyl group by gel permeation chromatography is preferably 1,000 to 50,000, and more preferably 1,500 to 10,000.
- the resist underlayer film forming composition is usually a liquid composition containing a solvent that dissolves the resin.
- the solvent is not particularly limited as long as it can dissolve the resin.
- those described in paragraphs [0070] to [0073] in JP-A No. 2004-168748 can be used.
- propylene glycol monomethyl ether ethylene glycol monoethyl ether acetate, ethyl lactate, n-butyl acetate, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate
- ketones such as 2-heptanone and cyclohexanone ⁇ -butyrolactone is preferred.
- this solvent may be used individually by 1 type, and may be used in combination of 2 or more type.
- the amount of the solvent used is a range in which the solid content concentration of the obtained composition is usually 1 to 80% by mass, preferably 3 to 40% by mass, more preferably 5 to 30% by mass. .
- the resist underlayer film forming composition may contain other components such as a surfactant, a storage stabilizer, and an antifoaming agent.
- the resist underlayer film forming composition does not substantially contain a crosslinking agent because the underlayer film is removed using a basic solution in the resist underlayer film removal step.
- the content of the crosslinking agent is preferably 0 to 3 parts by weight, more preferably 0 to 1 part by weight, and more preferably 0 to 0 part by weight with respect to 100 parts by weight of the resin having a phenolic hydroxyl group. 1 part by mass or less is more preferable, and 0 part by mass is particularly preferable.
- the intermediate layer formed in this step is a layer provided with these functions in order to supplement the functions of the resist underlayer film and / or the resist film in the formation of the resist pattern, or to obtain the functions that they do not have. That is.
- the antireflection film is formed as an intermediate layer, the antireflection function of the resist underlayer film can be supplemented.
- This intermediate layer can be formed of an organic compound or an inorganic oxide.
- organic compound examples include materials commercially available under trade names such as “DUV-42”, “DUV-44”, “ARC-28”, and “ARC-29” manufactured by Brewer Science, Materials commercially available under trade names such as “AR-3” and “AR-19” manufactured by Hearth can be used.
- inorganic oxide examples include materials marketed under the trade name such as “NFC SOG” series manufactured by JSR, polysiloxane formed by CVD, titanium oxide, alumina oxide, tungsten oxide, and the like. Can be used.
- the method for forming the intermediate layer is not particularly limited, and for example, a coating method, a CVD method, or the like can be used. Among these, the coating method is preferable. When the coating method is used, the intermediate layer can be formed continuously after forming the resist underlayer film.
- the film thickness of the intermediate layer is not particularly limited and is appropriately selected according to the function required for the intermediate layer, but is preferably in the range of 10 nm to 3,000 nm, more preferably 20 nm to 300 nm.
- Resist pattern formation process a resist pattern is formed on the upper surface side of the resist underlayer film, preferably through the intermediate layer.
- the resist pattern forming step include (2-a) a step using photolithography, (2-b) a step using a nanoimprint method, (2-c) a step using self-organization of the composition,
- a step through a (2- ⁇ ) inversion process or a side wall process In addition to the steps, there may be mentioned a step through a (2- ⁇ ) inversion process or a side wall process.
- each step will be described.
- a step using photolithography is, for example, (2-a-1) a step of applying a resist composition on the resist underlayer film to form a resist film (hereinafter referred to as “step (2-a- 1) "), (2-a-2) a step of selectively irradiating the resist film with radiation to expose the resist film (hereinafter also referred to as “step (2-a-2)”); (2-a-3) developing the exposed resist film to form a resist pattern (hereinafter also referred to as “step (2-a-3)”).
- a resist film is formed on the resist underlayer film using the resist composition. Specifically, after applying the resist composition so that the resulting resist film has a predetermined thickness, the solvent in the film is volatilized by pre-baking to form a resist film.
- the resist composition examples include a positive or negative chemically amplified resist composition containing a photoacid generator, a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, and an alkali-soluble resin and a crosslinking agent. And negative resist compositions composed of an agent.
- the resist composition used for forming the resist film on the resist underlayer film has a solid concentration of usually about 5 to 50% by mass, and is generally filtered with a filter having a pore diameter of about 0.2 ⁇ m, for example. And used for forming a resist film. In this step, a commercially available resist composition can be used as it is.
- the coating method of the resist composition is not particularly limited, and can be performed by, for example, a spin coating method.
- the pre-baking temperature is appropriately adjusted according to the type of resist composition used and the like, but is usually about 30 to 200 ° C., preferably 50 to 150 ° C.
- step (2-a-2) a predetermined region of the obtained resist film is irradiated with radiation and selectively exposed.
- the radiation used for the exposure is appropriate from visible light, ultraviolet light, far ultraviolet light, X-rays, electron beams, ⁇ rays, molecular beams, ion beams, etc., depending on the type of photoacid generator used in the resist composition.
- it is preferably far ultraviolet rays, and in particular, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 excimer laser (wavelength 157 nm), Kr 2 excimer laser (wavelength 147 nm), ArKr excimer laser (Wavelength 134 nm), extreme ultraviolet light (wavelength 13 nm, etc.) and the like are preferable.
- a resist pattern is formed by developing the exposed resist film with a developer.
- the developer used in this step is appropriately selected according to the type of resist composition used. Specifically, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanol Amine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3. 0] -5-nonene, and an organic aqueous solvent.
- a water-soluble organic solvent for example, an alcohol such as methanol or ethanol, or a surfactant can be added to these alkaline aqueous solutions.
- the resist pattern is formed by washing and drying.
- post-baking can be performed after the exposure before development in order to improve resolution, pattern profile, developability, and the like.
- the post-baking temperature is appropriately adjusted according to the type of resist composition used, but is usually about 50 to 200 ° C., preferably 70 to 150 ° C.
- step (2-b) a step of applying a resist composition on the resist underlayer film to form a resist film
- step (2-b-1) a step of applying a resist composition on the resist underlayer film to form a resist film
- step (2-b-2) A step of transferring the unevenness of the stamper by pressing and releasing a stamper having a fine unevenness pattern formed on the resist film (hereinafter also referred to as “step (2-b-2)”).
- the resist composition used in the above step (2-b-1) is not particularly limited.
- a radiation sensitive resin composition containing a polymerizable unsaturated compound and a radiation sensitive polymerization initiator can be used.
- the method for applying this composition is not particularly limited, and for example, it can be carried out by a spin coating method or the like.
- the pressing pressure is preferably 0.1 MPa or more and 100 MPa or less, more preferably 0.1 to 50 MPa, and the pressing time is 1
- the time is preferably from 2 to 600 seconds, more preferably from 1 to 300 seconds.
- the stamper may or may not have transparency to radiation.
- the stamper When the stamper has translucency and the resist coating contains a radiation sensitive polymerization initiator, the stamper is exposed to the resist coating in a pressed state, thereby making it easy to transfer the convex portion of the stamper. be able to.
- the transmittance for radiation is not particularly limited, but the transmittance is preferably 70% or more with respect to desired radiation (the radiation that the radiation-sensitive polymerization initiator can function), and is preferably 75 to 100%. Is more preferable, and 80 to 100% is still more preferable.
- the resist film When the stamper is exposed in a state where it is pressed against the resist film, the resist film may be completely cured by exposure, or may be completely cured by heating in a subsequent process after incomplete curing.
- the type of radiation used for the exposure is not particularly limited, and radiation (ArF excimer laser (wavelength: 193 nm) or KrF excimer laser (wavelength: 248 nm) such as charged particle beams such as visible light, ultraviolet light, far ultraviolet light, X-rays, and electron beams is used. Can be used.
- This stamper only needs to have mechanical properties as a stamper, and can further be transparent to radiation as described above. From such a viewpoint, a light-transmitting inorganic material is particularly preferable as the material constituting the stamper.
- a translucent inorganic material quartz material (quartz (single crystal, polycrystal), various glasses (quartz glass, fluoride glass, calcium phosphate glass, borate glass, borosilicate glass, etc.) ), Silicon, spinel, corundum, sapphire and the like.
- a functional layer can be provided on the surface of the stamper (surface having a convex portion) as necessary.
- As functional layers release layers, ionization suppression layers, adhesion improving layers (layers that improve adhesion between various layers such as a layer between a stamper and a translucent electrode layer), thermal diffusion layers, various optical functional layers (Reflection suppression, refractive index control layer, light transmission improving layer, etc.), insulating layer and the like. These various layers may use only 1 type and may use 2 or more types together. That is, for example, each layer may have only one layer or may have a multilayer structure of two or more layers.
- the thickness of each functional layer is not particularly limited, but the thickness of each layer is preferably 1 to 100 nm, more preferably 1 to 50 nm, and particularly preferably 1 to 20 nm.
- Step of using self-assembly of composition is, for example, (2-c-1)
- a resist film is formed by applying a solution containing two block copolymers or graft copolymers on the resist underlayer film.
- a process hereinafter also referred to as “process (2-c-1)”
- (2-c-2) a step of microphase separation of the resist film
- step (2-c-2) a step of selectively removing one phase of the microphase-separated resist film to form a resist pattern
- step (2-c-2) A step of selectively removing one phase of the microphase-separated resist film to form a resist pattern
- the solvent used in the solution containing the two block copolymers or graft copolymers in the above step (2-c-1) is preferably a good solvent for the two block copolymers or graft copolymers. Further, it is preferable to use a solvent having a high boiling point such as ethyl cellosolve acetate (ECA), propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate (EL) or the like at 150 ° C. or higher so that a uniform solution can be prepared.
- ECA ethyl cellosolve acetate
- PGMEA propylene glycol monomethyl ether acetate
- EL ethyl lactate
- the method for applying the solution is not particularly limited, and can be performed by, for example, a spin coating method.
- an excellent phase separation structure can be formed by annealing the film at a temperature equal to or higher than the glass transition temperature of the polymer. it can.
- step (2- ⁇ -1) a step of embedding a resin composition containing polysiloxane and an organic solvent between resist pattern patterns (hereinafter referred to as “step (2- ⁇ -1)”. ”)
- step (2- ⁇ -2) removing the resist pattern and forming a reverse pattern (hereinafter also referred to as “step (2- ⁇ -2)”).
- the resin composition is embedded between the resist patterns.
- the resin composition is applied onto the substrate to be processed on the substrate to be processed on which the resist pattern is formed by an appropriate application means such as spin coating, cast coating, roll coating, and the like. This resin composition is embedded between the patterns.
- the organic solvent in a composition can be volatilized by baking.
- the firing conditions are appropriately adjusted depending on the composition of the resin composition, but the firing temperature is usually 80 to 250 ° C., preferably 80 to 200 ° C. When the firing temperature is 80 to 180 ° C., the flattening process described later, particularly the flattening process by the wet etch back method can be performed smoothly.
- the heating time is usually 10 to 300 seconds, preferably 30 to 180 seconds.
- the photoresist pattern is removed, and a reverse pattern is formed.
- a planarization process for exposing the upper surface of the resist film is performed.
- the resist pattern is removed by dry etching or dissolution and a predetermined reverse pattern is obtained.
- an etching method such as dry etch back or wet etch back, a CMP (Chemical Mechanical Polishing) method, or the like can be used.
- dry etching back using a fluorine-based gas or the like, and a CMP method are preferable.
- the processing conditions in the planarization processing are not particularly limited, and can be adjusted as appropriate.
- dry etching is preferable for removing the resist pattern, and specifically, oxygen etching, ozone etching, and the like are preferably used.
- a known resist stripping apparatus such as an oxygen plasma ashing apparatus or an ozone ashing apparatus can be used.
- the etching process conditions are not particularly limited and can be adjusted as appropriate.
- step (2- ⁇ -1 ′) A step of applying a resin composition containing polysiloxane and an organic solvent to the side wall of the resist pattern (hereinafter also referred to as “step (2- ⁇ -1 ′)”) is employed. May be. After the step (2- ⁇ -1 ′), by removing the resist pattern, a sidewall pattern in which the sidewall shape of the resist pattern is transferred can be formed.
- the inversion pattern or the sidewall pattern is used as the resist pattern in the (3) pattern formation process.
- the resist underlayer film and the substrate to be processed are dry-etched using the resist pattern as a mask to form a pattern on the substrate to be processed.
- the intermediate layer is further dry etched.
- the dry etching can be performed using a known dry etching apparatus.
- the source gas during dry etching depends on the elemental composition of the object to be etched, but includes oxygen atoms such as O 2 , CO, and CO 2 , inert gases such as He, N 2 , and Ar, Cl 2 , chlorine gas such as BCl 3 , fluorine gas such as CHF 3 and CF 4 , gas of H 2 and NH 3 , etc. can be used. In addition, these gases can also be mixed and used.
- Step of removing resist underlayer film> the resist underlayer film on the substrate to be processed is removed with a basic solution.
- the basic solution used in this step is not particularly limited as long as it is basic.
- a basic aqueous solution such as 7-undecene and 1,5-diazabicyclo [4.3.0] -5-nonene can be used.
- these basic aqueous solutions may be those obtained by adding an appropriate amount of a water-soluble organic solvent, for example, alcohols such as methanol and ethanol, and a surfactant.
- a water-soluble organic solvent for example, alcohols such as methanol and ethanol, and a surfactant.
- the solution using organic solvents other than water may be sufficient.
- the pH of this basic solution is preferably 7.5 or more, and more preferably 8 or more, for example. If the pH is less than 7.5, the resist underlayer film may not be sufficiently removed.
- the method for removing the resist underlayer film with the basic solution is not particularly limited as long as the resist underlayer film and the basic solution can be in contact with each other for a certain period of time.
- coating a basic solution, etc. are mentioned.
- the immersion time in this immersion method can be set to, for example, about 0.2 to 30 minutes. After each of these methods, the substrate to be processed may be washed with water and dried.
- the resist underlayer film is removed by the basic solution in the resist underlayer film removing step after the pattern is formed on the substrate to be processed in this way, thereby suppressing the influence of the substrate and easily.
- the resist underlayer film can be removed.
- the resist underlayer film can be removed while suppressing the influence.
- the resist underlayer film of the present invention is a resist underlayer film that is formed from a composition for forming a resist underlayer film containing a resin having a phenolic hydroxyl group, is hardly soluble in an organic solvent, and is soluble in a basic solution. .
- insoluble in an organic solvent means that, when an organic solvent or a resist solution containing an organic solvent is applied on the resist underlayer film after film formation, the resist underlayer film and the coating solution do not mix.
- the amount of decrease in the thickness of the R-dist underlayer film before and after contacting with propylene glycol methyl ether acetate at 23 ° C. for 60 seconds is less than 1 nm.
- soluble in a basic solution means that when a basic solution is applied on a resist underlayer film after film formation, the resist underlayer film is dissolved by being dissolved in the basic solution. Specifically, it shows that the resist underlayer film does not substantially remain after being contacted with a 10 mass% tetramethylammonium hydroxide aqueous solution at 50 ° C. for 60 seconds.
- the resist underlayer film is hardly soluble in an organic solvent, it can suppress erosion of other layers laminated on the upper surface by coating or the like and functions as a layer. Further, since the resist underlayer film is soluble in a basic solution, it can be easily removed with a basic solution after pattern formation while suppressing the influence on the pattern.
- At least a part of the resin having a phenolic hydroxyl group is modified with a quinone structure.
- the means for modifying at least a part of the resin having a phenolic hydroxyl group to have a quinone structure has been described in the pattern forming method, and detailed description thereof is omitted here.
- the resist underlayer film has excellent solubility in an organic solvent because the phenolic hydroxyl group of the resin is modified to a quinone structure.
- the quinone structure is modified again to a phenol structure and becomes soluble in the basic solution. Therefore, the resist underlayer film can be easily removed with a basic solution.
- the resist underlayer film forming composition of the present invention comprises: (1) A resist underlayer film forming step of forming a resist underlayer film on the upper surface side of the substrate to be processed by applying the resist underlayer film forming composition; (2) a resist pattern forming step of forming a resist pattern on the upper surface side of the resist underlayer film; (3) Using the resist pattern as a mask, at least the resist underlayer film and the substrate to be processed are dry-etched to form a pattern on the substrate to be processed; and (4) A resist underlayer film removing step for removing the resist underlayer film on the substrate to be processed with a basic solution in this order, wherein the composition for forming a resist underlayer film comprises phenolic hydroxyl groups. It contains the resin which has.
- the resist underlayer film formed from the resist underlayer film forming composition can be easily removed after the etching step.
- the details of the resist underlayer film forming composition are as described above for the pattern forming method of the present invention.
- ⁇ Preparation Example 2 10 parts of the resin (A-2) was dissolved in 90 parts of a solvent (propylene glycol monomethyl ether). This solution was filtered through a membrane filter having a pore size of 0.1 ⁇ m to obtain a resist underlayer film forming composition (J-2) of Preparation Example 2.
- a solvent propylene glycol monomethyl ether
- ⁇ Preparation Example 3 10 parts of the resin (A-3) was dissolved in 90 parts of a solvent (propylene glycol monomethyl ether). This solution was filtered through a membrane filter having a pore size of 0.1 ⁇ m to obtain a resist underlayer film forming composition (J-3) of Preparation Example 3.
- a solvent propylene glycol monomethyl ether
- ⁇ Preparation Example 4 10 parts of the resin (A-4) was dissolved in 90 parts of a solvent (propylene glycol monomethyl ether). This solution was filtered through a membrane filter having a pore size of 0.1 ⁇ m to obtain a resist underlayer film forming composition (J-4) of Preparation Example 4.
- a solvent propylene glycol monomethyl ether
- ⁇ Preparation Example 5 10 parts of the resin (A-5) was dissolved in 90 parts of a solvent (propylene glycol monomethyl ether). This solution was filtered through a membrane filter having a pore size of 0.1 ⁇ m to obtain a composition for forming a resist underlayer film (J-5) of Preparation Example 5.
- a solvent propylene glycol monomethyl ether
- a resist underlayer film forming composition (J-1) prepared in Preparation Example 1 was spin-coated on a silicon wafer having a diameter of 8 inches, and then heated at 250 ° C. for 120 seconds in a hot plate to obtain a film thickness of 0 A resist underlayer film of 3 ⁇ m was formed.
- Examples 2 to 10 and Comparative Examples 1 and 2 Resist underlayer films of Examples 2 to 10 and Comparative Examples 1 and 2 were obtained through the same steps as in Example 1 except that the resist underlayer film forming composition shown in Table 1 was used and the heating conditions were used.
- Each of the obtained resist underlayer film forming compositions was spin-coated on a silicon wafer having a diameter of 8 inches, and then heated under the conditions shown in Table 1 in a hot plate to form a 300 nm-thick resist underlayer film. Formed.
- 20 mL of propylene glycol monomethyl ether acetate was applied, allowed to stand at 23 ° C. and 1 atm for 60 seconds, and then dried.
- the film thickness of the lower layer film on this silicon wafer was measured, the amount of decrease in the film thickness of the lower layer film was measured, and the organic solvent resistance was evaluated according to the following criteria.
- a 0.2 ⁇ m-thick coating type Low-k film is formed on a silicon wafer having a diameter of 8 inches, and each of the obtained resist underlayer film forming compositions is spin-coated on the hot-plate. Heating was performed under the conditions shown in Table 1 to form a resist underlayer film having a thickness of 0.3 ⁇ m. Thereafter, a silicon-containing intermediate layer composition solution for a three-layer resist process was spin-coated on the obtained resist underlayer film and heated at 200 ° C. for 60 seconds to form an intermediate layer film having a thickness of 0.05 ⁇ m. Next, an ArF resist composition solution was spin-coated on the obtained intermediate layer coating, and prebaked on a 130 ° C.
- the film treated with the etching gas was immersed in a 10% strength tetramethylammonium hydroxide aqueous solution at 50 ° C. for 10 minutes, immersed in 2-propanol for 10 minutes, washed with water, and dried.
- the film thickness of the lower layer film on this silicon wafer was measured, the film thickness of the lower layer film residual film was measured, and the lower layer film solvent peelability was evaluated according to the following criteria.
- an evaluation result is (circle) or (triangle
- ⁇ When the film thickness of the resist underlayer film residual film is less than 5 nm “ ⁇ ”: When the film thickness of the resist underlayer film residual film is 5 nm or more and less than 10 nm “X”: The film thickness of the resist underlayer film residual film is 10 nm Above
- each of the resist underlayer films obtained in Examples 1 to 10 has sufficient etching resistance and organic solvent resistance as a resist underlayer film, and a basic solution after etching ( It was found that it was easily removed by an aqueous tetramethylammonium hydroxide solution.
- each resist underlayer film obtained in Examples 1 to 5 is preferably heated and particularly excellent in organic solvent resistance and basic solution peelability. Further, in the evaluation of the basic solution peelability, it was confirmed that the formed Low-k film pattern was not particularly affected by deformation or the like even after being immersed in the basic solution.
- the pattern forming method of the present invention suppresses the influence on the substrate and can easily remove the resist underlayer film, the resist pattern can be formed efficiently, and therefore, a low dielectric material is used in particular.
- the present invention can be suitably used for manufacturing integrated circuit elements and the like.
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Abstract
Description
(1)フェノール性水酸基を有する樹脂を含むレジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成するレジスト下層膜形成工程と、
(2)上記レジスト下層膜の上面側にレジストパターンを形成するレジストパターン形成工程と、
(3)上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成するパターン形成工程と、
(4)上記被加工基板上のレジスト下層膜を塩基性溶液で除去するレジスト下層膜除去工程と
をこの順に有するパターン形成方法である。
(1)レジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成するレジスト下層膜形成工程と、
(2)上記レジスト下層膜の上面側にレジストパターンを形成するレジストパターン形成工程と、
(3)上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成するパターン形成工程と、
(4)上記被加工基板上のレジスト下層膜を塩基性溶液で除去するレジスト下層膜除去工程と
をこの順に有するパターン形成方法に用いられるレジスト下層膜形成用組成物であって、フェノール性水酸基を有する樹脂を含むことを特徴とする。
当該パターン形成方法は、
(1)フェノール性水酸基を有する樹脂を含むレジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成するレジスト下層膜形成工程と、
(2)上記レジスト下層膜の上面側にレジストパターンを形成するレジストパターン形成工程と、
(3)上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成するパターン形成工程と、
(4)上記被加工基板上のレジスト下層膜を塩基性溶液で除去するレジスト下層膜除去工程と
をこの順に有する。なお、(1)レジスト下層膜形成工程と(2)レジストパターン形成工程との間に、(1’)上記レジスト下層膜の上面側に中間層を形成する中間層形成工程を含み、(3)パターン形成工程において、さらに中間層をもドライエッチングしてもよい。以下、各工程について、詳説する。
(1)レジスト下層膜形成工程においては、フェノール性水酸基を有する樹脂を含むレジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成する。
本発明のパターン形成方法に用いられるレジスト下層膜形成用組成物は、フェノール性水酸基を有する樹脂を含み、その他、溶媒等の任意成分を含んでいてもよい。
フェノール性水酸基を有する樹脂としては、例えばノボラック樹脂等を挙げることができる。
上記レジスト下層膜形成用組成物は、通常、上記樹脂を溶解する溶媒を含む液状の組成物である。
上記レジスト下層膜形成用組成物は、界面活性剤、保存安定剤、消泡剤等のその他の成分を含んでいてもよい。
この工程にて形成される中間層は、レジストパターン形成において、レジスト下層膜及び/又はレジスト被膜が有する機能を補ったり、これらが有していない機能を得るためにこれらの機能が付与された層のことである。例えば、反射防止膜を中間層として形成した場合、レジスト下層膜の反射防止機能を補うことができる。
(2)レジストパターン形成工程においては、上記レジスト下層膜の上面側に、好ましくは上記中間層を介してレジストパターンを形成する。このレジストパターン形成工程としては、例えば、(2-a)フォトリソグラフィを用いる工程、(2-b)ナノインプリント法を用いる工程、(2-c)組成物の自己組織化を用いる工程、及び上記各工程に加えて行われる(2-α)反転プロセス又は側壁プロセスを経る工程等が挙げられる。以下、各工程について説明する。
(2-a)フォトリソグラフィを用いる工程は、例えば
(2-a-1)上記レジスト下層膜上に、レジスト組成物を塗布してレジスト被膜を形成する工程(以下、「工程(2-a-1)」ともいう。)と、
(2-a-2)上記レジスト被膜に、選択的に放射線を照射して、このレジスト被膜を露光する工程(以下、「工程(2-a-2)」ともいう。)と、
(2-a-3)露光された上記レジスト被膜を現像して、レジストパターンを形成する工程(以下、「工程(2-a-3)」ともいう。)と
を有する。
(2-b)ナノインプリント法を用いる工程は、例えば、
(2-b-1)上記レジスト下層膜上に、レジスト組成物を塗布してレジスト被膜を形成する工程(以下、「工程(2-b-1)」ともいう。)と、
(2-b-2)このレジスト被膜に微細な凹凸パターンが形成されたスタンパを圧接及び脱離して、スタンパの凹凸を転写する工程(以下、「工程(2-b-2)」ともいう。)と
を有する。
(2-c)組成物の自己組織化を用いる工程は、例えば
(2-c-1)上記レジスト下層膜上に、2種のブロックコポリマー又はグラフトコポリマーを含む溶液を塗布してレジスト被膜を形成する工程(以下、「工程(2-c-1)」ともいう。)と、
(2-c-2)上記レジスト被膜をミクロ相分離させる工程(以下、「工程(2-c-2)」ともいう。)と、
(2-c-3)上記ミクロ相分離されたレジスト被膜の1つの相を選択的に除去して、レジストパターンを形成する工程(以下、「工程(2-c-2)」ともいう。)と
を有する。
反転プロセスを経る工程としては、例えば
(2-α-1)レジストパターンのパターン間に、ポリシロキサンと有機溶媒とを含有する樹脂組成物を埋め込む工程(以下、「工程(2-α-1)」ともいう。)と、
(2-α-2)上記レジストパターンを除去し、反転パターンを形成する工程(以下、「工程(2-α-2)」ともいう。)と
を有する。
(2-α-1’)レジストパターンの側壁に、ポリシロキサンと有機溶媒とを含有する樹脂組成物を塗布する工程(以下、「工程(2-α-1’)」ともいう。)を採用してもよい。工程(2-α-1’)を経た後、レジストパターンを除去することで、レジストパターンの側壁形状を転写した側壁パターンを形成することができる。
(3)パターン形成工程においては、上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成する。なお、中間層を形成した場合は、さらに中間層もドライエッチングする。
(4)レジスト下層膜除去工程においては、上記被加工基板上のレジスト下層膜を塩基性溶液で除去する。
本発明のレジスト下層膜は、フェノール性水酸基を有する樹脂を含むレジスト下層膜形成用組成物から形成され、有機溶媒に難溶であり、かつ、塩基性溶液に可溶であるレジスト下層膜である。
本発明のレジスト下層膜形成用組成物は、
(1)レジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成するレジスト下層膜形成工程と、
(2)上記レジスト下層膜の上面側にレジストパターンを形成するレジストパターン形成工程と、
(3)上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成するパターン形成工程と、
(4)上記被加工基板上のレジスト下層膜を塩基性溶液で除去するレジスト下層膜除去工程と
をこの順に有するパターン形成方法に用いられるレジスト下層膜形成用組成物であって、フェノール性水酸基を有する樹脂を含むことを特徴とする。
<合成例1>
コンデンサー、温度計及び撹拌装置を備えた反応装置に1-ナフトール100部、プロピレングリコールモノメチルエーテルアセテート100部及びパラホルムアルデヒド50部を仕込み、シュウ酸2部を添加し、脱水しながら120℃に昇温して、5時間反応させた後、樹脂(A-1)を得た。得られた樹脂(A-1)の重量平均分子量(Mw)は2,000であった。
コンデンサー、温度計及び撹拌装置を備えた反応装置に2-ナフトール50部、3,5-ジヒドロキシ-2-ナフトエ酸、プロピレングリコールモノメチルエーテルアセテート100部及びパラホルムアルデヒド50部を仕込み、シュウ酸2部を添加し、脱水しながら120℃に昇温して、5時間反応させた後、樹脂(A-2)を得た。得られた樹脂(A-2)の重量平均分子量(Mw)は2,000であった。
コンデンサー、温度計及び撹拌装置を備えた反応装置に2,7-ジヒドロキシナフタレン100部、プロピレングリコールモノメチルエーテルアセテート100部及びパラホルムアルデヒド50部を仕込み、シュウ酸2部を添加し、脱水しながら120℃に昇温して、5時間反応させた後、樹脂(A-3)を得た。得られた樹脂(A-3)の重量平均分子量(Mw)は2,000であった。
コンデンサー、温度計及び撹拌装置を備えた反応装置に3-メチル-フェノール100部、プロピレングリコールモノメチルエーテルアセテート100部及びパラホルムアルデヒド100部を仕込み、シュウ酸3部を添加し、脱水しながら120℃に昇温して、5時間反応させた後、樹脂(A-4)を得た。得られた樹脂(A-4)の重量平均分子量(Mw)は8,000であった。
コンデンサー、温度計及び撹拌装置を備えた反応装置にレゾルシノール100部及びエタノール400部を仕込み、80℃に加熱後、4-ヒドロキシベンズアルデヒド120部及び濃塩酸15部を添加し、5時間反応させた。この反応溶液にN-メチル-2-ピロリドン1,000部、tert-ブチルブロモアセテート800部、テトラブチルアンモニウムブロミド50部及び塩化セシウム600部を加えて80℃に昇温して、40時間反応させた後、樹脂(A-5)を得た。得られた樹脂(A-5)の重量平均分子量(Mw)は1,600であった。
コンデンサー、温度計及び撹拌装置を備えた反応装置に4-ビニルベンゼンスルホン酸エチル100部及びメチルエチルケトン100部を仕込み、80℃に加熱後、アゾビスイソブチロニトリル3部を添加し、5時間反応させ樹脂(B-1)を得た。得られた樹脂(B-1)の重量平均分子量(Mw)は5,000であった。
<調製例1>
上記樹脂(A-1)10部を、溶媒(プロピレングリコールモノメチルエーテル)90部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、調製例1のレジスト下層膜形成用組成物(J-1)を得た。
上記樹脂(A-2)10部を、溶媒(プロピレングリコールモノメチルエーテル)90部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、調製例2のレジスト下層膜形成用組成物(J-2)を得た。
上記樹脂(A-3)10部を、溶媒(プロピレングリコールモノメチルエーテル)90部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、調製例3のレジスト下層膜形成用組成物(J-3)を得た。
上記樹脂(A-4)10部を、溶媒(プロピレングリコールモノメチルエーテル)90部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、調製例4のレジスト下層膜形成用組成物(J-4)を得た。
上記樹脂(A-5)10部を、溶媒(プロピレングリコールモノメチルエーテル)90部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、調製例5のレジスト下層膜形成用組成物(J-5)を得た。
上記樹脂(B-1)10部を、溶媒(プロピレングリコールモノメチルエーテル)90部に溶解した。この溶液を孔径0.1μmのメンブランフィルターでろ過して、比較調製例1のレジスト下層膜形成用組成物(j-1)を得た。
<実施例1>
直径8インチのシリコンウェハー上に、調製例1で調製したレジスト下層膜形成用組成物(J-1)をスピンコートした後、ホットプレート内にて250℃で120秒間加熱して、膜厚0.3μmのレジスト下層膜を形成した。
表1に示すレジスト下層膜形成用組成物を用い、加熱条件としたこと以外は実施例1と同様の工程を経て、実施例2~10及び比較例1~2のレジスト下層膜を得た。
実施例1~10及び比較例1~2の各レジスト下層膜について、下記の評価を行った。その結果を表1に示す。
直径8インチのシリコンウェハー上に、得られた各レジスト下層膜形成用組成物をスピンコートした後、ホットプレート内にて表1に示す条件にて加熱して、膜厚300nmのレジスト下層膜を形成し、このレジスト下層膜をエッチング装置「EXAM」(神鋼精機社製)を用いて、CF4/Ar(CF4:100mL/min、Ar:100mL/min;RFパワー:200W)でエッチング処理した。エッチング処理前後の膜厚を測定して、エッチングレートを算出し、下記の基準でエッチング耐性を評価した。
「○」:エッチングレートが150nm/min以下の場合
「×」:エッチングレートが150nm/minを超える場合
直径8インチのシリコンウェハー上に、得られた各レジスト下層膜形成用組成物をスピンコートした後、ホットプレート内にて表1に示す条件にて加熱して、膜厚300nmのレジスト下層膜を形成した。このレジスト下層膜に対して、プロピレングリコールモノメチルエーテルアセテート20mLを塗布し、23℃1気圧で60秒間静置した後、乾燥させた。このシリコンウェハー上の下層膜の膜厚を測定して、下層膜の膜厚減少量を測定し、下記の基準で有機溶媒耐性を評価した。なお、評価結果が○又は△の場合、下層膜として十分に使用可能と判断できる。
「○」:レジスト下層膜の膜厚減少量が1nm未満の場合
「△」:レジスト下層膜の膜厚減少量が1nm以上5nm未満の場合
「×」:レジスト下層膜の膜厚減少量が5nm以上の場合
直径8インチのシリコンウェハー上に、膜厚0.2μm塗布型Low-k膜を成し、この上に、得られた各レジスト下層膜形成用組成物をスピンコートした後、ホットプレート内にて表1に示す条件にて加熱して、膜厚0.3μmのレジスト下層膜を形成した。その後、得られたレジスト下層膜上に3層レジストプロセス用ケイ素含有中間層組成物溶液をスピンコートし、200℃60秒間加熱して、膜厚0.05μmの中間層被膜を形成した。次いで、得られた中間層被膜上に、ArF用レジスト組成物溶液をスピンコートし、130℃のホットプレート上で90秒間プレベークして、膜厚0.2μmのレジスト被膜を形成した。この積層物をエッチング装置「EXAM」(神鋼精機社製)を用いて、O2(O2:100mL/min、;RFパワー:100W)でArFレジスト層を剥離し、続いてCF4/Ar(CF4:100mL/min、Ar:100mL/min;RFパワー:100W)でケイ素含有中間層組を剥離し、さらにケイ素含有中間層が完全に剥離された後にレジスト下層膜に対してCF4/Ar(CF4:100mL/min、Ar:100mL/min;RFパワー:100W)でエッチングした。このエッチングガス処理された膜を50℃の10%濃度のテトラメチルアンモニウムヒドロキシド水溶液の中に10分間浸し、2-プロパノール中に10分間浸し、水洗し、乾燥した。このシリコンウェハー上の下層膜の膜厚を測定して、下層膜残膜の膜厚を測定し、下記の基準で下層膜溶媒剥離性を評価した。なお評価結果が、○又は△の場合、塩基性溶液で容易に除去されると判断できる。
「○」:レジスト下層膜残膜の膜厚が5nm未満の場合
「△」:レジスト下層膜残膜の膜厚が5nm以上10nm未満の場合
「×」:レジスト下層膜残膜の膜厚が10nm以上の場合
Claims (8)
- (1)フェノール性水酸基を有する樹脂を含むレジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成するレジスト下層膜形成工程と、
(2)上記レジスト下層膜の上面側にレジストパターンを形成するレジストパターン形成工程と、
(3)上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成するパターン形成工程と、
(4)上記被加工基板上のレジスト下層膜を塩基性溶液で除去するレジスト下層膜除去工程と
をこの順に有するパターン形成方法。 - (1)レジスト下層膜形成工程における上記フェノール性水酸基を有する樹脂の少なくとも一部をキノン構造に変性させる請求項1に記載のパターン形成方法。
- 加熱により上記変性を行う請求項2に記載のパターン形成方法。
- (1)レジスト下層膜形成工程と(2)レジストパターン形成工程との間に、
(1’)上記レジスト下層膜の上面側に中間層を形成する中間層形成工程
を含み、
(3)パターン形成工程において、さらに中間層をドライエッチングする請求項1、請求項2又は請求項3に記載のパターン形成方法。 - 上記レジスト下層膜形成用組成物における上記フェノール性水酸基を有する樹脂100質量部に対する架橋剤の含有量が、0質量部以上3質量部以下である請求項1から請求項4のいずれか1項に記載のパターン形成方法。
- フェノール性水酸基を有する樹脂を含むレジスト下層膜形成用組成物の塗布により形成され、
有機溶媒に難溶であり、かつ、塩基性溶液に可溶であるレジスト下層膜。 - 上記フェノール性水酸基を有する樹脂の少なくとも一部がキノン構造に変性されている請求項6のレジスト下層膜。
- (1)レジスト下層膜形成用組成物の塗布により、被加工基板の上面側にレジスト下層膜を形成するレジスト下層膜形成工程と、
(2)上記レジスト下層膜の上面側にレジストパターンを形成するレジストパターン形成工程と、
(3)上記レジストパターンをマスクとして、少なくとも上記レジスト下層膜及び被加工基板をドライエッチングし、被加工基板にパターンを形成するパターン形成工程と、
(4)上記被加工基板上のレジスト下層膜を塩基性溶液で除去するレジスト下層膜除去工程と
をこの順に有するパターン形成方法に用いられるレジスト下層膜形成用組成物であって、フェノール性水酸基を有する樹脂を含むことを特徴とするレジスト下層膜形成用組成物。
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Also Published As
Publication number | Publication date |
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US8871432B2 (en) | 2014-10-28 |
KR101824285B1 (ko) | 2018-01-31 |
US20130273476A1 (en) | 2013-10-17 |
JP5910500B2 (ja) | 2016-04-27 |
JPWO2012043403A1 (ja) | 2014-02-06 |
TWI539248B (zh) | 2016-06-21 |
TW201224681A (en) | 2012-06-16 |
KR20130132781A (ko) | 2013-12-05 |
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