WO2012043340A1 - ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 - Google Patents
ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 Download PDFInfo
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- WO2012043340A1 WO2012043340A1 PCT/JP2011/071500 JP2011071500W WO2012043340A1 WO 2012043340 A1 WO2012043340 A1 WO 2012043340A1 JP 2011071500 W JP2011071500 W JP 2011071500W WO 2012043340 A1 WO2012043340 A1 WO 2012043340A1
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- film
- dicing
- die
- die bond
- melting point
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Classifications
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
- Y10T428/24331—Composite web or sheet including nonapertured component
Definitions
- the present invention relates to a dicing die bond film in which a die bond film and a dicing film are laminated. Moreover, this invention relates to the manufacturing method of the semiconductor device using the said dicing die-bonding film.
- silver paste is used for fixing a semiconductor chip to a lead frame or an electrode member in a manufacturing process of a semiconductor device.
- the fixing process is performed by applying a paste adhesive on a die pad or the like of the lead frame, mounting a semiconductor chip on the lead adhesive, and curing the paste adhesive layer.
- paste adhesives have large variations in coating amount and coating shape due to their viscosity behavior and deterioration.
- the thickness of the paste-like adhesive formed is not uniform, and the reliability of the fixing strength related to the semiconductor chip is poor. That is, when the application amount of the paste adhesive is insufficient, the bonding strength between the semiconductor chip and the electrode member is lowered, and the semiconductor chip is peeled off in the subsequent wire bonding process.
- the application amount of the paste adhesive is too large, the paste adhesive is cast onto the semiconductor chip, resulting in poor characteristics, and the yield and reliability are lowered.
- Such a problem in the adhering process becomes particularly remarkable as the semiconductor chip becomes larger. Therefore, it is necessary to frequently control the amount of paste adhesive applied, which hinders workability and productivity.
- This dicing film has an adhesive layer that can be peeled off on a support substrate. After dicing the semiconductor wafer under the holding of the adhesive layer, the support substrate is stretched to bond the formed chip. They are peeled off together with the agent layer, collected individually, and fixed to an adherend such as a lead frame through the adhesive layer.
- Patent Document 5 discloses an adhesive sheet used in the DBG method or stealth dicing, in which the breaking strength at 25 ° C. is 0.1 MPa or more and 10 MPa or less, and the elongation at break is 1% or more and 40% or less. A sheet is disclosed. However, since the adhesive sheet of Patent Document 5 has an elongation at break of 40% or less, for example, when used for stealth dicing, it may break before the semiconductor wafer when tensile tension is applied, There is a risk of being divided on a line different from the line to be divided.
- Patent Document 6 discloses a dicing tape used in stealth dicing and having a tensile load of 15 N or more at a tape elongation of 10%. However, in the dicing tape of Patent Document 6, when the yield point elongation of the dicing tape itself is small, the dicing tape may be plastically deformed or broken in the expanding process, and normal dicing may not be performed. .
- Patent Document 7 discloses a dicing tape-integrated adhesive sheet used in the DBG method and stealth dicing, and a dicing tape that does not show a yield point at the time of tensile deformation, and the elongation at break exceeds 40% and is less than 400%.
- a dicing tape-integrated adhesive sheet including the adhesive sheet is disclosed.
- the adhesive sheet may break first in the expanding step.
- the present invention has been made in view of the above-described problems, and its purpose is to prevent dicing film from yielding and breaking and dicing capable of suitably breaking the die bond film by tensile tension. -To provide a die bond film.
- Another object of the present invention is to provide a method of manufacturing a semiconductor device that can prevent the dicing film from yielding and breaking and can suitably break the die bond film by tensile tension.
- the inventors of the present application examined dicing die-bonding films in order to solve the conventional problems.
- the tensile strength at the contact portion where the outer periphery of the push-up jig contacts and the elongation at yield point are within a specific range
- the tensile strength of the contact portion and the wafer affixing the semiconductor wafer
- the dicing die-bonding film according to the present invention is a dicing die-bonding film in which a die-bonding film is provided on the dicing film, and after the semiconductor wafer is irradiated with laser light to form a modified region, the semiconductor wafer A method of obtaining a semiconductor element from a semiconductor wafer by breaking in the modified region, or after forming a groove that does not reach the back surface on the surface of the semiconductor wafer, grinding the back surface of the semiconductor wafer, from the back surface
- the dicing film is used in a method for obtaining a semiconductor element from a semiconductor wafer by exposing a groove, and the dicing film has a ring sticking portion for attaching a dicing ring on an outer peripheral portion, and is further inside than the ring sticking portion.
- the contact portion where the push-up jig comes into contact needs to have at least the same or higher tensile strength than the wafer sticking portion where the push-up jig does not come into contact. Further, the wafer sticking portion needs to be expanded when a tensile tension is applied.
- [(tensile strength of the contact portion) ⁇ (tensile strength of the wafer pasting portion)] is 0N or more and 60N or less.
- the tensile strength at 25 degreeC in the contact part of a dicing film is 15N or more on the said conditions, when applying a tension
- the said tensile strength is 80 N or less, a die-bonding film can be fractured, without giving an excessive load to the apparatus which applies tensile tension.
- the yield point elongation at 25 degreeC in the contact part of a dicing film is 80% or more, it can expand, suppressing the plastic deformation of a dicing film.
- the tensile strength at 25 ° C. at the wafer pasting portion is 10 N or more, the tensile stress can be transmitted well to the die bond film. Further, since the tensile strength at 25 ° C.
- the tensile strength at the wafer pasting portion is 70 N or less, when the tensile tension is applied, the wafer pasting portion is appropriately expanded, and the die bond film can be broken.
- the yield point elongation of the wafer sticking part is 30% or more, when the tensile tension is applied, the wafer sticking part is appropriately expanded, and the die bond film can be broken.
- the elongation at break of the die bond film is larger than 40%, it can be prevented from being easily broken and the handleability can be improved.
- the said breaking elongation rate is 500% or less, when extended, it can prevent extending
- the tensile strength at the contact portion of the dicing film is 15 N or more and 80 N or less, and the yield point elongation is 80% or more, and the wafer attaching portion of the dicing film
- the tensile strength at 25 ° C. is 10 N or more and 70 N or less, and the yield point elongation is 30% or more, and [(Tensile strength of the contact portion) ⁇ (Tensile strength of the wafer pasting portion)] is Since it is 0N or more and 60N or less, by applying tensile tension, the dicing film can be expanded without breaking, and the die bond film can be broken.
- the dicing film has a structure in which a base material and a reinforcing member are laminated at least in the contact portion. Since the dicing film has a structure in which the base material and the reinforcing member are laminated at least in the contact portion, when the tensile tension is applied, the tensile tension of the contact portion can be increased. Can be broken normally.
- the dynamic friction coefficient of the contact portion of the dicing film is 0 to 0.02.
- the dynamic friction coefficient of the contact portion of the dicing film is 0.2 or less, the friction with the push-up jig when applying tensile tension can be reduced, and the die bond film can be normally broken.
- the surface roughness Ra of the contact portion is 0.03 ⁇ m or more and 1.5 ⁇ m or less, or the contact portion is treated with a lubricant. If the surface roughness Ra of the contact portion is 0.03 ⁇ m or more, or if the contact portion is treated with a lubricant, it is possible to more suitably reduce friction with the push-up jig when applying tensile tension.
- the die bond film can be normally broken.
- (A) is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention
- (b) is the top view. It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment of this invention.
- (A), (b) is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.
- (A), (b) is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.
- FIG.1 (a) is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention
- FIG.1 (b) is the top view
- FIG. 2 is a schematic cross-sectional view showing a dicing die-bonding film according to another embodiment of the present invention.
- the dicing die bond film 10 has a configuration in which the die bond film 3 is laminated on the dicing film 11.
- the dicing film 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the base material 1, and the die-bonding film 3 is provided on the pressure-sensitive adhesive layer 2.
- the die bond film 3 is formed only on the portion 2 a corresponding to the semiconductor wafer attaching portion of the pressure-sensitive adhesive layer 2.
- a configuration in which a die bond film 3 ′ is formed on the entire surface of the dicing film 11 as in the dicing die bond film 12 shown in FIG. 2 may be used.
- the dicing film 11 has a ring attaching portion 13 for attaching a dicing ring 31 to the outer peripheral portion, and the semiconductor wafer 4 on the inner side of the ring attaching portion 13.
- the contact part 14 with which the outer periphery of the pushing-up jig
- [(tensile strength of the contact portion 14) ⁇ (tensile strength of the wafer pasting portion 15)] is 0N or more and 60N or less, preferably 0N or more and 58N or less, and 0N or more and 55N or less. It is more preferable.
- the tensile strength at 25 ° C. in the contact portion 14 of the dicing film 11 is 15N or more and 80N or less, preferably 20N or more and 75N or less, and more preferably 25N or more and 70N or less. Since the tensile strength at 25 ° C. in the contact portion 14 of the dicing film 11 is 15 N or more, the dicing film 11 may be broken or plastically deformed at the contact portion 14 when a tensile tension is applied. Can be prevented, and the die-bonding film 3 can be normally broken. Moreover, since the said tensile strength is 80 N or less, the die-bonding film 3 can be fractured, without giving an excessive load to the apparatus which applies tensile tension.
- the yield point elongation at 25 ° C. at the contact portion 14 of the dicing film 11 is 80% or more, preferably 85% or more, and more preferably 90% or more. Moreover, although the yield point elongation at 25 degreeC in the contact part 14 of the dicing film 11 is so preferable that it is large, it shall be 330% or less, 300% or less, 290% or less, 260% or less, 250% or less etc., for example. Can do. Since the yield point elongation at 25 ° C. at the contact portion 14 of the dicing film 11 is 80% or more, the plastic deformation of the dicing film can be suppressed, and the breaking of the dicing film can be prevented.
- the tensile strength at 25 ° C. of the wafer pasting portion 15 of the dicing film 11 is 10N or more and 70N or less, preferably 11N or more and 50N or less, and more preferably 12N or more and 40N or less. Since the tensile strength at 25 ° C. in the wafer pasting portion 15 is 10 N or more, the tensile stress can be transmitted well to the die bond film. Moreover, since the tensile strength at 25 ° C. in the wafer pasting portion 15 is 70 N or less, when the tensile tension is applied, the wafer pasting portion 15 is appropriately expanded, and the die bond film 3 can be broken.
- the yield point elongation at 25 ° C. in the wafer pasting portion 15 of the dicing film 11 is 30% or more, and preferably 35% or more. Moreover, although the yield point elongation at 25 degreeC in the wafer sticking part 15 of the dicing film 11 is so preferable that it is large, it is set as 330% or less, 300% or less, 290% or less, 260% or less, 250% or less etc., for example. be able to. Since the yield point elongation of the wafer sticking part 15 is 30% or more, when the tensile tension is applied, the wafer sticking part 15 is appropriately expanded, and the die bond film 3 can be broken.
- the tensile strength is the strength when the specimen is extended by 10% at a sample width of 25 mm, a distance between chucks of 100 mm, and a pulling speed of 300 mm / min.
- the yield point elongation is the elongation at the yield point of the stress-strain curve obtained when measured at 25 ° C. with a sample width of 10 mm, a distance between chucks of 50 mm, and a tensile speed of 300 mm / min. .
- the elongation at break is defined as the yield point elongation.
- a tensile test was performed with a sample width of 10 mm, a chuck-to-chuck distance of 50 mm, and a pulling speed of 300 mm / min.
- the slope dy / dx changes from a positive value to 0 or a negative value.
- the base material 1 is preferably one having ultraviolet transparency, and serves as a strength matrix of a dicing die-bonding film.
- polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass
- examples of the material of the substrate 1 include polymers such as a crosslinked body of the resin.
- the plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.
- the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip The collection of the (semiconductor element) can be facilitated.
- the surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers.
- a physical treatment or a coating treatment with a primer can be performed.
- the base material 1 can be used by appropriately selecting the same kind or different kinds, and a blend of several kinds can be used as necessary.
- the base material 1 is provided with a vapor-deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, etc. on the base material 1 in order to impart an antistatic ability. be able to.
- the substrate 1 may be a single layer or two or more types.
- the thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 ⁇ m. If the substrate 1 is too thick, the pick-up property may be inferior.
- the dicing film 11 may have a structure in which the base material 1 and the reinforcing member are laminated at least in the contact portion 14. This case will be described below.
- Fig.3 (a) is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment.
- the dicing film 18 has a structure in which the pressure-sensitive adhesive layer 2 is laminated on the substrate 1, and the reinforcing member 16a is further laminated thereon.
- the reinforcing member 16 a is provided on the adhesive layer 2 in a range not facing the wafer attaching part 15, and is provided so as to be included in both the contact part 14 and the ring attaching part 13.
- the reinforcing member 16a may be provided so as to be included only in the contact portion 14.
- the adhesive layer 17a for attaching a dicing ring is provided on the reinforcing member 16a. Can do.
- FIG.3 (b) is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment.
- the dicing film 19 has a structure in which the pressure-sensitive adhesive layer 2 is laminated on the substrate 1, and the reinforcing member 16b is laminated on the back surface of the substrate 1.
- the reinforcing member 16 b is provided on the back surface of the substrate 1 in a range not facing the wafer pasting portion 15 and is provided so as to be included in both the contact portion 14 and the ring pasting portion 13.
- the reinforcing member 16b may be provided so as to be included only in the contact portion 14.
- the reinforcing member 16b is configured to be provided on the back surface of the substrate 1, a configuration in which an adhesive layer 17b for attaching the reinforcing member 16b to the back surface of the substrate 1 is provided as shown in FIG. It can be.
- the same material as the base material 1 can be used as the material of the reinforcing member 16 (reinforcing member 16a, reinforcing member 16b).
- the thickness of the reinforcing member 16 is not particularly limited and can be appropriately determined. However, the thickness is preferably 5 to 70 ⁇ m, more preferably 8 to 40 ⁇ m, and still more preferably 10 to 20 ⁇ m. Further, the tensile strength of the reinforcing member 16 is preferably 15N or more and 80N or less, more preferably 20N or more and 60N or less, and further preferably 25N or more and 50N or less. The tensile strength of the reinforcing member 16 can be measured by the same method as that for the dicing film 11.
- the dynamic friction coefficient of the contact portion 14 is preferably 0 to 0.02, more preferably 0 to 0.019, and further preferably 0 to 0.018.
- the dynamic friction coefficient of the contact portion 14 is 0.02 or less, friction with the push-up jig 33 when applying tensile tension can be reduced, and the die bond film 11 can be normally broken.
- the dynamic friction coefficient in the contact part 14 of the base material 1 is the said numerical range.
- the dynamic friction coefficient at the contact portion 14 of the reinforcing member 16b is preferably in the above numerical range.
- the surface roughness Ra of the contact portion 14 is preferably 0.03 ⁇ m or more and 1.5 ⁇ m or less, and more preferably 0.05 ⁇ m or more and 1.4 ⁇ m or less.
- the surface roughness Ra can be controlled by embossing.
- FIGS. 1B and 3A when the base material 1 comes into contact with the push-up jig 33, the surface roughness Ra at the contact portion 14 of the base material 1 is within the above numerical range. It is preferable that Further, as shown in FIG. 3B, when the reinforcing member 16b comes into contact with the push-up jig 33, the surface roughness Ra at the contact portion 14 of the reinforcing member 16b is preferably in the above numerical range.
- the contact portion 14 is preferably treated with a lubricant.
- a lubricant For example, a silicone type and a fluorine-type thing can be mentioned.
- the contact portion 14 is treated with the lubricant, the friction with the push-up jig 33 when applying the tensile tension can be more suitably reduced, and the die bond film can be normally broken.
- the base material 1 can be formed of different materials for the portion corresponding to the contact portion 14 and the portion corresponding to the wafer pasting portion 15. Thereby, a difference can be provided in the tensile strength of the contact part 14 and the wafer sticking part 15, and a yield point elongation.
- a manufacturing method of the base material 1 composed of a material in which a portion corresponding to the contact portion 14 and a portion corresponding to the wafer sticking portion 15 are different for example, a base material from which a portion corresponding to the wafer sticking portion 15 is cut out
- Examples include a method of fitting substrates having different tensile strength and / or yield point elongation.
- the pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used.
- the pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.
- acrylic polymer examples include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, such as
- the acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out.
- Such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allyl sulf
- a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
- examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably
- the acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization.
- the polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.
- the content of the low molecular weight substance is preferably small.
- the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.
- an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer.
- the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
- a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
- the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, with respect to 100 parts by weight of the base polymer.
- additives such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.
- the pressure-sensitive adhesive layer 2 can be formed of an ultraviolet curable pressure-sensitive adhesive.
- the UV curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with ultraviolet light, and only the portion 2a corresponding to the semiconductor wafer attachment portion of the pressure-sensitive adhesive layer 2 shown in FIG. By irradiating with ultraviolet rays, a difference in adhesive strength with the other portion 2b can be provided.
- the portion 2a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 is affixed to the portion 2a that has been cured and has reduced adhesive strength, the interface between the portion 2a of the pressure-sensitive adhesive layer 2 and the die bond film 3 has a property of being easily peeled off during pickup. On the other hand, the portion not irradiated with ultraviolet rays has a sufficient adhesive force, and forms the portion 2b.
- the portion 2b formed of an uncured ultraviolet curable pressure-sensitive adhesive adheres to the die-bonding film 3 'and can secure a holding force when dicing.
- the ultraviolet curable pressure-sensitive adhesive can support the die-bonding film 3 ′ for die-bonding a semiconductor chip to an adherend such as a substrate with a good balance of adhesion and peeling.
- the portion 2b can fix the wafer ring.
- the ultraviolet curable adhesive those having an ultraviolet curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.
- the ultraviolet curable pressure-sensitive adhesive include an additive-type ultraviolet curable pressure-sensitive adhesive in which an ultraviolet curable monomer component or an oligomer component is blended with a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Can be illustrated.
- an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability with an organic solvent such as ultrapure water or alcohol of an electronic component that is difficult to contaminate a semiconductor wafer or glass Is preferred.
- acrylic polymer examples include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, such as
- the acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out.
- Such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allyl sulf
- a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
- examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably
- the acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization.
- the polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.
- the content of the low molecular weight substance is preferably small.
- the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.
- an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer.
- the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
- a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
- the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, 5 parts by weight or less is preferable with respect to 100 parts by weight of the base polymer. Moreover, it is preferable that it is 0.1 weight part or more as a lower limit.
- additives such as various tackifiers and anti-aging agents may be used for the adhesive, if necessary,
- Examples of the ultraviolet curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and penta.
- Examples include erythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like.
- Examples of the ultraviolet curable oligomer component include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable.
- the blending amount of the ultraviolet curable monomer component and oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer. In general, the amount is, for example, about 5 to 500 parts by weight, preferably about 70 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
- the UV-curable adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain end as a base polymer.
- Intrinsic ultraviolet curable pressure sensitive adhesives using Intrinsic UV curable pressure-sensitive adhesive does not need to contain an oligomer component or the like, which is a low molecular weight component, or does not contain much, so that the oligomer component or the like does not move through the pressure-sensitive adhesive over time and is stable. It is preferable because an adhesive layer having a layer structure can be formed.
- the base polymer having a carbon-carbon double bond those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation.
- those having an acrylic polymer as a basic skeleton are preferable.
- the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
- the method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted.
- the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design.
- a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into an ultraviolet curable carbon-carbon double bond.
- combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like.
- a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction.
- the functional group may be on either side of the acrylic polymer and the compound as long as the combination of these functional groups generates an acrylic polymer having the carbon-carbon double bond.
- it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group.
- examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
- the acrylic polymer a copolymer obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like is used.
- the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the ultraviolet curable monomer does not deteriorate the characteristics.
- Components and oligomer components can also be blended.
- the UV-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, with respect to 100 parts by weight of the base polymer.
- the ultraviolet curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like.
- the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ '-dimethylacetophenone, 2-methyl-2-hydroxypropio ⁇ -ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalene
- the ultraviolet curable pressure-sensitive adhesive examples include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.
- photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956.
- a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.
- Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the ultraviolet curable pressure-sensitive adhesive layer 2 is formed on the substrate 1, the portion 2a is partially irradiated with ultraviolet rays to be cured. .
- the partial ultraviolet irradiation can be performed through a photomask on which a pattern corresponding to the portion 3b other than the semiconductor wafer bonding portion 3a is formed.
- curing an ultraviolet-ray spotly are mentioned.
- the ultraviolet curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the substrate 1. Partial UV curing can also be performed on the UV curable pressure-sensitive adhesive layer 2 provided on the separator.
- a part of the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays so that (the adhesive strength of the portion 2a) ⁇ (the adhesive strength of the other portion 2b). Also good. That is, after forming the ultraviolet-curing pressure-sensitive adhesive layer 2 on the substrate 1, at least one side of the substrate 1 is shielded from all or part of the portion other than the portion corresponding to the semiconductor wafer pasting portion 3 a. By irradiating with ultraviolet rays, the portion corresponding to the semiconductor wafer pasting portion 3a can be cured to form the portion 2a with reduced adhesive strength.
- the light shielding material a material that can be a photomask on a support film can be produced by printing or vapor deposition. Thereby, the dicing die-bonding film 12 can be manufactured efficiently.
- the thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 ⁇ m, more preferably 2 to 30 ⁇ m, and still more preferably, from the viewpoints of chipping prevention of the chip cut surface and compatibility of fixing and holding of the adhesive layer. 5 to 25 ⁇ m.
- the tensile storage modulus at ⁇ 10 ° C. to 30 ° C. of the pressure-sensitive adhesive layer 2 is preferably 1 ⁇ 10 4 to 1 ⁇ 10 10 Pa.
- chipping can be prevented when the wafer breaks, and chip skipping and misalignment when picking up a semiconductor chip with a die bond film can be prevented. Can be prevented.
- the die bond films 3, 3 ' have an elongation at break at 25 ° C before thermosetting of more than 40% and 500% or less. Since the elongation at break is greater than 40% and less than or equal to 500%, a step of applying tensile tension to the dicing die-bonding films 10, 12, 20, and 21 to break the die-bonding films 3 and 3 ′ (chip forming step described later) ), The die bond films 3, 3 ′ can be suitably broken by the tensile tension. In particular, since the elongation at break at 25 ° C.
- thermosetting when tensile tension is applied to the dicing die bond film 12 when the semiconductor chip 5 is obtained from the semiconductor wafer 4 by stealth dicing, the die bond film 3 3 ′ and the semiconductor wafer 4 can be broken at the same time, and the die-bonding films 3 and 3 ′ and the semiconductor wafer 4 can be reliably broken at the division line 4L.
- the breaking elongation is preferably greater than 43% and not greater than 500%, and more preferably greater than 60% and not greater than 450%.
- the elongation at break may satisfy the above numerical range in at least one direction of the flow direction (MD) or the width direction (TD).
- the peel strength (23 ° C., peel angle 180 °, peel speed 300 mm / min) between the pressure-sensitive adhesive layer 2 and the die bond film 3 of the dicing film 11 is preferably in the range of 0.02 N / 20 mm to 0.2 N / 20 mm.
- a range of 0.03 N / 20 mm to 0.15 N / 20 mm is more preferable, and a range of 0.04 N / 20 mm to 0.1 N / 20 mm is more preferable.
- the peel strength (23 ° C., peel angle 180 °, peel speed 300 mm / min) between the die bond film 3 and the semiconductor wafer is preferably in the range of 0.02 N / 20 mm to 0.5 N / 20 mm, and 0.03 N / 20 mm.
- the range of ⁇ 0.3 N / 20 mm is more preferable, and the range of 0.04 N / 20 mm to 0.2 N / 20 mm is more preferable.
- the die bond films 3, 3 ′ preferably have a tensile storage modulus at ⁇ 20 ° C. to 30 ° C. of 0.1 GPa or more and 10 GPa or less, more preferably 0.2 GPa or more and 9.5 GPa, More preferably, it is 5 GPa or more and 9 GPa.
- the tensile storage modulus at ⁇ 20 ° C. to 30 ° C. is 0.1 GPa or more, the breakability of the die bond films 3 and 3 ′ when expanded is improved. Further, by setting the tensile storage modulus to 10 GPa or less, the laminating property of the die bond films 3, 3 'to the semiconductor wafer is improved.
- the laminated structure of the die bond film is not particularly limited.
- the die bond film 3 or 3 ' (see FIGS. 1 to 3) is composed of only a single layer of the adhesive layer, or is bonded to one or both sides of the core material.
- the thing of the multilayer structure which formed the agent layer is mentioned.
- the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.
- the die bond film has a multilayer structure, the elongation at break, the tensile storage elastic modulus, the loss elastic modulus, and the like may be within the numerical range as the entire die bond film having a multilayer structure.
- Examples of the adhesive composition that constitutes the die bond films 3 and 3 ′ include a combination of a thermoplastic resin and a thermosetting resin.
- thermosetting resin examples include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, as a hardening
- the epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type.
- novolac type epoxy resins novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
- the phenol resin acts as a curing agent for the epoxy resin.
- examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.
- the blending ratio of the epoxy resin and the phenol resin is, for example, preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy groups in the epoxy resin component. . More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.
- thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.
- the acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component.
- alkyl group examples include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.
- an acrylic copolymer is particularly preferable for the purpose of improving cohesive force.
- the acrylic copolymer include a copolymer of ethyl acrylate and methyl methacrylate, a copolymer of acrylic acid and acrylonitrile, and a copolymer of butyl acrylate and acrylonitrile.
- the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid.
- Carboxyl group-containing monomers maleic anhydride or acid anhydride monomers such as itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-methacrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyl Hydroxyl group-containing monomers such as acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as
- the blending ratio of the thermosetting resin is not particularly limited as long as the die-bonding films 3 and 3 ′ exhibit a function as a thermosetting type when heated under predetermined conditions, but are 5 to 60% by weight. It is preferably within the range, and more preferably within the range of 10 to 50% by weight.
- the die bond films 3 and 3 ′ preferably have a glass transition temperature (Tg) before thermosetting of 25 to 60 ° C., more preferably 25 to 55 ° C., and further preferably 25 to 50 ° C. preferable.
- Tg glass transition temperature
- the glass transition temperature was measured using a dynamic viscoelasticity measuring device at a loss tangent (tan ⁇ ) from ⁇ 30 to 280 ° C. under the conditions of a frequency of 10 Hz and a heating rate of 5 ° C./min. This is a value obtained from the peak value of tan ⁇ .
- At least one of the epoxy resin and the phenol resin includes one or more resins having a melting point of 50 ° C. or more. This can be achieved by inclusion.
- Epoxy resins having a melting point of 50 ° C. or higher include AER-8039 (Asahi Kasei Epoxy, melting point 78 ° C.), BREN-105 (Nippon Kayaku, melting point 64 ° C.), BREN-S (Nippon Kayaku, melting point 83 ° C.).
- AER-8039 (Asahi Kasei Epoxy, melting point 78 ° C), BREN-105 (Nippon Kayaku, melting point 64 ° C), BREN-S (Nippon Kayaku, melting point 83 ° C), CER-3000L (Nippon Kasei) Medicinal product, melting point 90 ° C), EHPE-3150 (manufactured by Daicel Chemical, melting point 80 ° C), EPPN-501HY (manufactured by Nippon Kayaku, melting point 60 ° C), ESN-165M (manufactured by Nippon Steel Chemical Co., Ltd., melting point 76 ° C), ESN- 175L (manufactured by Nippon Steel Chemical Co., Ltd., melting point 90 ° C.), ESN-175S (manufactured by Nippon Steel Chemical Co., Ltd., melting point 67 ° C.), ESN-355 (manufactured by Nippon Steel Chemical Co., Ltd., B
- phenol resins having a melting point of 50 ° C. or more include DL-65 (Maywa Kasei, melting point 65 ° C.), DL-92 (Maywa Kasei, melting point 92 ° C.), DPP-L (Nippon Petroleum, melting point 100 ° C.), GS-180 (manufactured by Gunei Chemical, melting point 83 ° C), GS-200 (manufactured by Gunei Chemical, melting point 100 ° C), H-1 (manufactured by Meiwa Kasei, melting point 79 ° C), H-4 (manufactured by Meiwa Kasei, melting point) 71 ° C), HE-100C-15 (manufactured by Sumitomo Chemical, melting point 73 ° C), HE-510-05 (man
- the total weight of the epoxy resin and the phenol resin is X
- the weight of the acrylic resin is Y X / (X + Y) is preferably 0.3 or more and less than 0.9, more preferably 0.35 or more and less than 0.85, and further preferably 0.4 or more and less than 0.8.
- the epoxy resin and the phenol resin are easily broken as the content increases, the adhesion to the semiconductor wafer 4 decreases.
- the die-bonding films 3 and 3 ′ are less likely to be broken during bonding and handling, and the workability is improved.
- a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer is added as a crosslinking agent in the production. Can do. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.
- crosslinking agent conventionally known crosslinking agents can be used. Particularly preferred are polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate.
- the addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.
- a filler can be appropriately blended in the die bond films 3 and 3 ′ depending on the application.
- the blending of the filler enables imparting conductivity, improving thermal conductivity, adjusting the elastic modulus, and the like.
- the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties.
- the inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker.
- a conductive substance may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity.
- Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.
- the average particle diameter of the filler is preferably 0.005 to 10 ⁇ m, and more preferably 0.005 to 1 ⁇ m. This is because when the average particle size of the filler is 0.005 ⁇ m or more, the wettability to the adherend and the adhesiveness can be improved. Moreover, by setting it as 10 micrometers or less, while being able to make the effect of the filler added for provision of said each characteristic sufficient, heat resistance can be ensured.
- the average particle size of the filler is, for example, a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).
- B / (A + B) is 0.1 or more and 0.7 or less.
- it is 0.1 to 0.65, more preferably 0.1 to 0.6.
- additives can be appropriately blended in the die bond films 3 and 3 ′ as necessary.
- other additives include flame retardants, silane coupling agents, ion trapping agents, and the like.
- flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more.
- silane coupling agent include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more.
- the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.
- the thickness of the die bond films 3 and 3 ′ is not particularly limited, but can be selected, for example, from the range of 1 to 200 ⁇ m, preferably 5 to 100 ⁇ m, more preferably 10 to 80 ⁇ m.
- the die bond films 3, 3 'of the dicing die bond films 10, 12 are preferably protected by a separator (not shown).
- the separator has a function as a protective material for protecting the die bond films 3 and 3 ′ until they are put into practical use. Further, the separator can be used as a support base material when transferring the die bond films 3 and 3 ′ to the pressure-sensitive adhesive layer 2. The separator is peeled off when a workpiece is stuck on the die bond film 3, 3 'of the dicing die bond film.
- a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.
- a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent
- the dicing die bond films 10 and 12 according to the present embodiment are produced as follows, for example.
- the base material 1 can be formed by a conventionally known film forming method.
- the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.
- the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 2 is formed.
- a coating method For example, roll coating, screen coating, gravure coating, etc. are mentioned.
- drying conditions for example, a drying temperature of 80 to 150 ° C. and a drying time of 0.5 to 5 minutes are performed.
- the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing film 11 is produced.
- the die bond films 3, 3 ' are produced, for example, as follows. First, an adhesive composition solution that is a material for forming the die bond films 3 and 3 ′ is prepared. As described above, the adhesive composition solution contains the adhesive composition, filler, and other various additives.
- the coating film is dried under predetermined conditions to form an adhesive layer.
- a coating method For example, roll coating, screen coating, gravure coating, etc. are mentioned.
- drying conditions for example, a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes are performed.
- coating an adhesive composition solution on a separator and forming a coating film you may dry an application film on the said drying conditions, and may form an adhesive bond layer. Then, an adhesive bond layer is bonded together with a separator on a base material separator.
- the separator is peeled off from each of the dicing film 11 and the adhesive layer, and both are bonded so that the adhesive layer and the pressure-sensitive adhesive layer become a bonding surface.
- Bonding can be performed by, for example, pressure bonding.
- the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C.
- the linear pressure is not particularly limited, and is preferably 0.1 to 20 kgf / cm, and more preferably 1 to 10 kgf / cm.
- the base material separator on the adhesive layer is peeled off, and the dicing die-bonding film according to the present embodiment is obtained.
- FIGS. 4 to 7 are schematic cross-sectional views for explaining a method for manufacturing the semiconductor device according to the present embodiment.
- the modified region is formed on the division line 4L by irradiating the division line 4L of the semiconductor wafer 4 with laser light.
- This method is a method of aligning a condensing point inside a semiconductor wafer, irradiating a laser beam along a grid-like division planned line, and forming a modified region inside the semiconductor wafer by ablation by multiphoton absorption. . What is necessary is just to adjust suitably within the range of the following conditions as laser beam irradiation conditions.
- the semiconductor wafer 4 after the formation of the modified region is pressure-bonded on the die bond film, and this is bonded and held (fixing step).
- This step is performed while pressing with a pressing means such as a pressure roll.
- the attaching temperature at the time of mounting is not particularly limited, but is preferably in the range of 40 to 80 ° C. This is because warping of the semiconductor wafer 4 can be effectively prevented and the influence of expansion and contraction of the dicing die-bonding film can be reduced.
- the semiconductor wafer 4 and the die bond film 3 are broken at the planned dividing line 4L to form the semiconductor chip 5 (chip forming step).
- a commercially available wafer expansion device can be used. Specifically, as shown in FIGS. 1B and 6A, a dicing ring 31 is attached to the ring attaching portion 13 of the dicing film 11 of the dicing die bond film 10 to which the semiconductor wafer 4 is attached. After that, it is fixed to the wafer expansion device 32. Next, as shown in FIG. 6B, the push-up jig 33 is raised to apply tension to the dicing die-bonding film 10.
- This chip formation step can be performed under conditions of ⁇ 50 ° C. to 10 ° C., more preferably ⁇ 20 ° C. to 30 ° C., and further preferably ⁇ 10 ° C. to 25 ° C.
- the expanding speed (speed at which the push-up portion rises) is preferably 100 to 400 mm / second, more preferably 100 to 350 mm / second, and 100 to 300 mm / second. Further preferred.
- the expanding speed is preferably 100 to 400 mm / second or more, the semiconductor wafer 4 and the die bond film 3 can be easily broken at substantially the same time. Moreover, it can prevent that the dicing film 11 fractures
- the amount of expand is preferably 6 to 12%.
- the amount of expansion may be adjusted as appropriate according to the chip size to be formed within the numerical range.
- the amount of expand is the value (%) of the surface area increased by the expand by making the surface area of the dicing film before expansion into 100%.
- the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing die bond film 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device may be mentioned.
- the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the die-bonding film 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5.
- Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.
- the picked-up semiconductor chip 5 is die-bonded to the adherend 6 via the die-bonding film 3 (temporary fixing step).
- the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip.
- the adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.
- a conventionally known substrate can be used as the substrate.
- a metal lead frame such as a Cu lead frame or 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used.
- the present invention is not limited to this, and includes a circuit board that can be used by bonding and fixing a semiconductor element and electrically connecting the semiconductor element.
- the shear adhesive strength at 25 ° C. when the die bond film 3 is temporarily fixed is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, with respect to the adherend 6.
- the shear bond strength of the die bond film 3 is at least 0.2 MPa or more, the die bond film 3 and the semiconductor chip 5 or the adherend 6 are bonded by ultrasonic vibration or heating in the wire bonding process. Less shear deformation occurs on the adhesive surface. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.
- the shear adhesive strength at 175 ° C. at the time of temporary fixing of the die bond film 3 ′ is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 6.
- wire bonding is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by the bonding wire 7 (wire bonding step).
- the bonding wire 7 for example, a gold wire, an aluminum wire, a copper wire or the like is used.
- the temperature for wire bonding is 80 to 250 ° C., preferably 80 to 220 ° C.
- the heating time is several seconds to several minutes.
- the connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step can be performed without thermosetting the die bond film 3. Further, the semiconductor chip 5 and the adherend 6 are not fixed by the die bond film 3 in the process of this step.
- the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step).
- This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6.
- This step is performed by molding a sealing resin with a mold.
- the sealing resin 8 for example, an epoxy resin is used.
- the heating temperature at the time of resin sealing is usually 175 ° C. for 60 to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 to 185 ° C. for several minutes. Thereby, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 3. That is, in the present invention, even when the post-curing step described later is not performed, the die bonding film 3 can be fixed in this step, and the number of manufacturing steps can be reduced and the semiconductor device manufacturing period can be reduced. It can contribute to shortening.
- the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even if the die bond film 3 is not completely thermoset in the sealing step, the die bond film 3 can be completely thermoset together with the sealing resin 8 in this step.
- the heating temperature in this step varies depending on the type of the sealing resin, but is in the range of 165 to 185 ° C., for example, and the heating time is about 0.5 to 8 hours.
- the die bond film 3 after thermosetting preferably has a shear adhesive strength of 0.01 MPa or more at 175 ° C., more preferably 0.01 to 5 MPa.
- FIG. 8A a groove 4 ⁇ / b> S that does not reach the back surface 4 ⁇ / b> R is formed on the front surface 4 ⁇ / b> F of the semiconductor wafer 4 by the rotating blade 41.
- the semiconductor wafer 4 is supported by a support base (not shown).
- the depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 and the expanding conditions.
- FIG. 8B the semiconductor wafer 4 is supported on the protective base material 42 so that the surface 4 ⁇ / b> F contacts.
- back grinding is performed with the grinding wheel 45 to expose the groove 4S from the back surface 4R.
- a conventionally well-known sticking apparatus can be used for affixing the protective base material 42 to a semiconductor wafer, and a conventionally well-known grinding apparatus can also be used for back surface grinding.
- the semiconductor wafer 4 with the grooves 4 ⁇ / b> S exposed is pressure-bonded onto the dicing die-bonding film 10, and this is adhered and held and fixed (temporary fixing step).
- the protective substrate 42 is peeled off, and tension is applied to the dicing die-bonding film 10 by the wafer expansion device 32.
- the die bond film 3 is broken to form the semiconductor chip 5 (chip forming step).
- the temperature, the expansion speed, and the amount of expansion in the chip formation step are the same as those in the case where the modified region is formed on the division planned line 4L by irradiating the laser beam. Since the subsequent steps are the same as the case where the modified region is formed on the planned division line 4L by irradiating the laser beam, the description here will be omitted.
- die bond films A to F were produced as follows. ⁇ Production of die bond film> (Die bond film A) The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
- Epoxy resin manufactured by JER Corporation, Epicoat 1004, melting point: 97 ° C.
- phenol resin Mitsubishi Chemicals, Millex XLC-4L, melting point: 62 ° C.
- Acrylic ester polymer based on ethyl acrylate-methyl methacrylate manufactured by Nagase Chemtex Co., Ltd., WS-023 100 parts by weight
- Spherical silica manufactured by Admatechs Co., Ltd.
- SO-25R 1287 parts by weight
- This adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 25 ⁇ m was produced.
- (Die bond film B) The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
- This adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness of 25 ⁇ m was produced.
- This adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film C having a thickness of 25 ⁇ m was produced.
- This adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film D having a thickness of 25 ⁇ m was produced.
- This adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film E having a thickness of 25 ⁇ m was produced.
- This adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film F having a thickness of 25 ⁇ m was produced.
- base materials A to J for dicing films were prepared as follows. ⁇ Preparation of substrate for dicing film> (Substrate A) An olefin-based multilayer film (thickness 100 ⁇ m, back surface (layer thickness: 80 ⁇ m) and a layer (thickness 20 ⁇ m) composed of a mixed resin of polypropylene and ethylene-propylene rubber and a layer (thickness 20 ⁇ m) made of LLDPE (linear low density polyethylene) The LLDPE layer side) was prepared with an embossing treatment). A raw pet film (manufactured by Teijin DuPont, product name “Teijin Tetron Film”, thickness 16 ⁇ m) was bonded to the portion corresponding to the contact portion of the olefin-based multilayer film from the surface.
- Substrate B SEBS (styrene elastomer) and MBS (methacrylic ester-butadiene-styrene copolymer resin) (thickness 105 ⁇ m), SEBS layer (thickness 30 ⁇ m), and PE (polyethylene)
- a multilayer film (thickness 150 ⁇ m, embossed on the back side (PE layer side)) was prepared by laminating layers (thickness 15 ⁇ m) in this order.
- Substrate C A vinyl chloride film (manufactured by Mitsubishi Plastics Co., Ltd., product name “Altron # 2800”, thickness 100 ⁇ m) was prepared by embossing the back surface.
- Substrate D A vinyl chloride film (manufactured by Mitsubishi Plastics, product name “Altron # 2800”, thickness 100 ⁇ m) was prepared (no embossing treatment).
- Substrate E SEBS (styrene elastomer) and MBS (methacrylate-butadiene-styrene copolymer resin) (thickness 50 ⁇ m), SEBS layer (thickness 85 ⁇ m), and PE (polyethylene)
- a multilayer film (thickness 150 ⁇ m, embossed on the back side (PE layer side)) was prepared by laminating layers (thickness 15 ⁇ m) in this order.
- LDPE low density polyethylene
- Substrate G A vinyl chloride film (product name “Altron # 3300”, manufactured by Mitsubishi Plastics, Inc., thickness 100 ⁇ m) having an embossed surface was prepared.
- Substrate H A base material A (olefin-based multilayer film) was prepared.
- a pet film manufactured by Nitto Denko Corporation, product name “BT-315”, thickness 70 ⁇ m was bonded to the portion corresponding to the contact portion of the olefin-based multilayer film from the back.
- Substrate I A vinyl chloride film (manufactured by Mitsubishi Plastics Co., Ltd., product name “Altron # 2800”, thickness 100 ⁇ m) was prepared by embossing the back surface. A pet film (manufactured by Nitto Denko Corporation, product name “BT-315”, thickness 70 ⁇ m) was pasted to the portion corresponding to the wafer pasting portion of the vinyl chloride film from the back.
- a base material A (olefin-based multilayer film) was prepared.
- a pet film (made by Teijin DuPont, product name “Teijin Tetron Film”, thickness: 16 ⁇ m) on one side of which is equivalent to the contact portion of the olefin-based multilayer film is treated with a silicone-treated surface on the back side. They were pasted together.
- the following adhesive was used for bonding of the back surface of the base material A and a pet film.
- ⁇ Adhesive layer for dicing film> In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 88.8 parts of 2-ethylhexyl acrylate (hereinafter also referred to as “2EHA”), 2-hydroxyethyl acrylate ( Hereinafter, it is also referred to as “HEA”.) 11.2 parts, 0.2 part of benzoyl peroxide, and 65 parts of toluene are added and polymerized in a nitrogen stream at 61 ° C. for 6 hours to obtain a weight average molecular weight of 850,000. Acrylic polymer A was obtained. The molar ratio of 2EHA to HEA was 100 mol to 20 mol.
- the pressure-sensitive adhesive composition solution A was applied onto the silicone-treated surface of the PET release liner, and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 ⁇ m. Then, it heated at 50 degreeC for 24 hours.
- Adhesive layer A was bonded to each of base materials A to J, and 300 mJ / cm 2 of UV light was applied to the wafer side only with the UV irradiation device (product name “UM-810” manufactured by Nitto Seiki). Was irradiated to obtain a dicing film. Die bond films A to F were bonded to this dicing film to obtain a dicing die bond film.
- the combinations of the base materials A to J and the die bond films A to F are as shown in Tables 1 and 2 below.
- ⁇ Measurement of tensile storage modulus> The die bond films A to J were each formed in a strip shape having a thickness of 200 ⁇ m and a width of 10 mm. Next, using a solid viscoelasticity measuring device (RSA (III), manufactured by Rheometric Scientific), the tensile storage elastic modulus at -50 to 300 ° C. was set at a frequency of 1 Hz and a heating rate of 10 ° C./min. Measured below. Tables 1 and 2 show the tensile storage modulus at 25 ° C. at that time.
- RSA solid viscoelasticity measuring device
- the dynamic friction coefficient of the contact part of the obtained dicing film was measured.
- the dynamic friction coefficient was measured as follows.
- FIG. 10 is a diagram for explaining a method for measuring the dynamic friction coefficient.
- a 200 mm ⁇ 500 mm stainless steel plate 100 is prepared, and this plate 100 and a 200 mm ⁇ 500 mm measurement object 110 (dicing film) are bonded to the adhesive layer side. And pasted together.
- a 50 mm ⁇ 50 mm weight 101 was attached to a 50 mm ⁇ 50 mm slip piece 102.
- three weights 101N, 200N, and 300N were prepared with the sliding piece 102 attached thereto.
- a product name “Nitoflon NO.903UL” manufactured by Nitto Denko Corporation was used as the sliding piece 102.
- the weight 101 with the sliding piece 102 was placed on the measurement object 110, pulled by the tensile tester 103, and the force applied to the load cell of the tensile tester 103 was detected. At this time, the peak of the static friction force was ignored, and the force after starting the relative displacement motion between the contact surfaces was defined as the dynamic friction force (N / 50 mm) (see FIG. 11).
- the tensile tester 103 a product name, Tensilon, manufactured by Shimadzu Corporation was used, and the tensile conditions were a tensile speed of 300 mm / min and a tensile movement distance of 100 mm.
- step 1 (Confirmation of breakage) ⁇ When adopting a step (step 1) of forming a modified region on the division line 4L by irradiating laser light> Using ML300-Integration, manufactured by Tokyo Seimitsu Co., Ltd. as the laser processing device, the condensing point is aligned inside the semiconductor wafer, and laser light is emitted from the surface side of the semiconductor wafer along the grid-like (10 mm x 10 mm) division line. Irradiated to form a modified region inside the semiconductor wafer. As the semiconductor wafer, a silicon wafer (thickness 50 ⁇ m, outer diameter 12 inches) was used. The laser light irradiation conditions were as follows.
- A Laser light Laser light source
- Semiconductor laser excitation Nd YAG laser Wavelength 1064 nm
- Oscillation form Q switch pulse Repetition frequency 100kHz Pulse width 30ns Output 20 ⁇ J / pulse
- Laser light quality TEM00 40 Polarization characteristics Linearly polarized light
- B condenser lens Magnification 50 times NA 0.55 60% transmittance for laser wavelength
- C Moving speed of the table on which the semiconductor substrate is placed 100 mm / second
- step 2 ⁇ When a step of forming grooves on the surface of the semiconductor wafer and then grinding the back surface (step 2)> A grid-shaped (10 mm ⁇ 10 mm) cut groove was formed on a semiconductor wafer (thickness: 500 ⁇ m) by blade dicing. The depth of the cut groove was 250 ⁇ m. Next, the surface of the semiconductor wafer was protected with a protective tape, and backside grinding was performed until the thickness became 50 ⁇ m, thereby obtaining individual semiconductor chips (10 mm ⁇ 10 mm ⁇ 50 ⁇ m) divided. After bonding this to each of the dicing die-bonding films of Examples and Comparative Examples, a break test was performed.
- the expanding conditions in the break test were room temperature (25 ° C.), an expanding speed of 400 mm / second, and an expanding amount of 20 mm.
- the result of the break test as in the case of the above-mentioned step 1, the case where there was no broken failure portion was marked as ⁇ , and the case where there was a broken failure location was marked as x.
- the results are shown in Tables 1 and 2.
- Needle push-up speed 5 mm / s Needle push-up amount: 600 ⁇ m
- Pickup time 1 second Expanding amount: 12.5 mm Needle type: F0.7 * 15deg * 10l * 350 ⁇ m
- Collet MICRO-MECHANNICS, product name “RUBBER TIP”, product number 13-034-126
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Abstract
Description
すなわち、前記構成によれば、ダイシングフィルムの接触部における25℃での引張強度が、15N以上80N以下であり、且つ、降伏点伸度が80%以上であり、前記ダイシングフィルムの前記ウェハ貼付部における25℃での引張強度が、10N以上70N以下であり、且つ、降伏点伸度が30%以上であり、[(前記接触部の引張強度)-(前記ウェハ貼付部の引張強度)]が、0N以上60N以下であるため、引張張力を加えることにより、ダイシングフィルムを破断させることなく拡張させることができるとともに、ダイボンドフィルムを破断させることができる。
2 粘着剤層
3 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
10、12、20、21 ダイシング・ダイボンドフィルム
11、18、19 ダイシングフィルム
13 リング貼付部
14 接触部
15 ウェハ貼付部
31 ダイシングリング
33 突き上げ治具
本実施形態に係るダイシング・ダイボンドフィルムについて以下に説明する。図1(a)は、本発明の一実施形態に係るダイシング・ダイボンドフィルムを示す断面模式図であり、図1(b)は、その平面図である。図2は、本発明の他の実施形態に係るダイシング・ダイボンドフィルムを示す断面模式図である。
図3(a)に示すダイシング・ダイボンドフィルム20においては、ダイシングフィルム18は、基材1上に粘着剤層2が積層され、さらに、その上に補強部材16aが積層された構造を有している。補強部材16aは、ウェハ貼付部15に対向しない範囲において、接着剤層2上に設けられ、接触部14とリング貼付部13との両方に含まれるように設けられている。なお、補強部材16aは、接触部14のみにだけ含まれるように設けられていてもよい。補強部材16aが接着剤層2上に設けられる構成とする場合、図3(a)に示すように、補強部材16a上にダイシングリングを貼り付けるための接着剤層17aを設けた構成とすることができる。
図3(b)に示すダイシング・ダイボンドフィルム21においては、ダイシングフィルム19は、基材1上に粘着剤層2が積層され、基材1の裏面には、補強部材16bが積層された構造を有している。補強部材16bは、ウェハ貼付部15に対向しない範囲において、基材1の裏面に設けられ、接触部14とリング貼付部13との両方に含まれるように設けられている。なお、補強部材16bは、接触部14のみにだけ含まれるように設けられていてもよい。補強部材16bが基材1の裏面に設けられる構成とする場合、図3(b)に示すように、補強部材16bを基材1の裏面に貼り付けるための接着剤層17bが設けられた構成とすることができる。
また、補強部材16の引張強度は、15N以上80N以下であることが好ましく、20N以上60N以下であることがより好ましく、25N以上50N以下であることがさらに好ましい。補強部材16の引張強度は、ダイシングフィルム11と同様の方法により測定することができる。
ダイボンドフィルム3、3’の熱硬化前のガラス転移温度を25~60℃とするには、例えば、前記エポキシ樹脂と前記フェノール樹脂との少なくとも一方に、融点が50℃以上の樹脂を1種類以上含ませることにより達成できる。融点が50℃以上のエポキシ樹脂としては、AER-8039(旭化成エポキシ製、融点78℃)、BREN-105(日本化薬製、融点64℃)、BREN-S(日本化薬製、融点83℃)、CER-3000L(日本化薬製、融点90℃)、EHPE-3150(ダイセル化学製、融点80℃)、EPPN-501HY(日本化薬製、融点60℃)、ESN-165M(新日鉄化学製、融点76℃)、ESN-175L(新日鉄化学製、融点90℃)、ESN-175S(新日鉄化学製、融点67℃)、ESN-355(新日鉄化学製、融点55℃)、ESN-375(新日鉄化学製、融点75℃)、ESPD-295(住友化学製、融点69℃)、EXA-7335(大日本インキ製、融点99℃)、EXA-7337(大日本インキ製、融点70℃)、HP-7200H(大日本インキ製、融点82℃)、TEPIC-SS(日産化学製、融点108℃)、YDC-1312(東都化成製、融点141℃)、YDC-1500(東都化成製、融点101℃)、YL-6121HN(JER製、融点130℃)、YSLV-120TE(東都化成製、融点113℃)、YSLV-80XY(東都化成製、融点80℃)、YX-4000H(JER製、融点105℃)、YX-4000K(JER製、融点107℃)、ZX-650(東都化成製、融点85℃)、エピコート1001(JER製、融点64℃)、エピコート1002(JER製、融点78℃)、エピコート1003(JER製、融点89℃)、エピコート1004(JER製、融点97℃)、エピコート1006FS(JER製、融点112℃)を挙げることができる。なかでも、AER-8039(旭化成エポキシ製、融点78℃)、BREN-105(日本化薬製、融点64℃)、BREN-S(日本化薬製、融点83℃)、CER-3000L(日本化薬製、融点90℃)、EHPE-3150(ダイセル化学製、融点80℃)、EPPN-501HY(日本化薬製、融点60℃)、ESN-165M(新日鉄化学製、融点76℃)、ESN-175L(新日鉄化学製、融点90℃)、ESN-175S(新日鉄化学製、融点67℃)、ESN-355(新日鉄化学製、融点55℃)、ESN-375(新日鉄化学製、融点75℃)、ESPD-295(住友化学製、融点69℃)、EXA-7335(大日本インキ製、融点99℃)、EXA-7337(大日本インキ製、融点70℃)、HP-7200H(大日本インキ製、融点82℃)、YSLV-80XY(東都化成製、融点80℃)、ZX-650(東都化成製、融点85℃)、エピコート1001(JER製、融点64℃)、エピコート1002(JER製、融点78℃)、エピコート1003(JER製、融点89℃)、エピコート1004(JER製、融点97℃)が好ましい。これらのエポキシ樹脂は、融点が高すぎない(100℃未満である)ため、ダイボンドフィルムに使用した際のウェハラミネート性が良好である。 融点が50℃以上のフェノール樹脂としては、DL-65(明和化成製、融点65℃)、DL-92(明和化成製、融点92℃)、DPP-L(日本石油製、融点100℃)、GS-180(群栄化学製、融点83℃)、GS-200(群栄化学製、融点100℃)、H-1(明和化成製、融点79℃)、H-4(明和化成製、融点71℃)、HE-100C-15(住友ケミカル製、融点73℃)、HE-510-05(住友ケミカル製、融点75℃)、HF-1(明和化成製、融点84℃)、HF-3(明和化成製、融点96℃)、MEH-7500(明和化成製、融点111℃)、MEH-7500-3S(明和化成製、融点83℃)、MEH-7800-3L(明和化成製、融点72℃)、MEH-7851(明和化成製、融点78℃)、MEH-7851-3H(明和化成製、融点105℃)、MEH-7851-4H(明和化成製、融点130℃)、MEH-7851S(明和化成製、融点73℃)、P-1000(荒川化学製、融点63℃)、P-180(荒川化学製、融点83℃)、P-200(荒川化学製、融点100℃)、VR-8210(三井化学製、融点60℃)、XLC-3L(三井化学製、融点70℃)、XLC-4L(三井化学製、融点62℃)、XLC-LL(三井化学製、融点75℃)、を挙げることができる。なかでも、DL-65(明和化成製、融点65℃)、DL-92(明和化成製、融点92℃)、GS-180(群栄化学製、融点83℃)、H-1(明和化成製、融点79℃)、H-4(明和化成製、融点71℃)、HE-100C-15(住友ケミカル製、融点73℃)、HE-510-05(住友ケミカル製、融点75℃)、HF-1(明和化成製、融点84℃)、HF-3(明和化成製、融点96℃)、MEH-7500-3S(明和化成製、融点83℃)、MEH-7800-3L(明和化成製、融点72℃)、MEH-7851(明和化成製、融点78℃)、MEH-7851S(明和化成製、融点73℃)、P-1000(荒川化学製、融点63℃)、P-180(荒川化学製、融点83℃)、VR-8210(三井化学製、融点60℃)、XLC-3L(三井化学製、融点70℃)、XLC-4L(三井化学製、融点62℃)、XLC-LL(三井化学製、融点75℃)、が好ましい。これらのフェノール樹脂は、融点が高すぎない(100℃未満である)ため、ダイボンドフィルムに使用した際のウェハラミネート性が良好である。
先ず、基材1は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
次に、図4~図9を参照しながらダイシング・ダイボンドフィルム10を用いた半導体装置の製造方法について説明する。図4~図7は、本実施形態に係る半導体装置の一製造方法を説明するための断面模式図である。まず、半導体ウェハ4の分割予定ライン4Lにレーザー光を照射して分割予定ライン4L上に改質領域を形成する。本方法は、半導体ウェハの内部に集光点を合わせ、格子状の分割予定ラインに沿ってレーザー光を照射し、多光子吸収によるアブレーションにより半導体ウェハの内部に改質領域を形成する方法である。レーザー光照射条件としては、以下の条件の範囲内で適宜調整すればよい。
<レーザー光照射条件>
(A)レーザー光
レーザー光源 半導体レーザー励起Nd:YAGレーザー
波長 1064nm
レーザー光スポット断面積 3.14×10-8cm2
発振形態 Qスイッチパルス
繰り返し周波数 100kHz以下
パルス幅 1μs以下
出力 1mJ以下
レーザー光品質 TEM00
偏光特性 直線偏光
(B)集光用レンズ
倍率 100倍以下
NA 0.55
レーザー光波長に対する透過率 100%以下
(C)半導体基板が載置される裁置台の移動速度 280mm/秒以下
なお、レーザー光を照射して分割予定ライン4L上に改質領域を形成する方法については、特許第3408805号公報や、特開2003-338567号公報に詳述されているので、ここでの詳細な説明は省略することとする。
<ダイボンドフィルムの作製>
(ダイボンドフィルムA)
下記(a)~(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)エポキシ樹脂(JER(株)製、エピコート1004、融点:97℃)
11重量部
(b)フェノール樹脂(三井化学(株)製、ミレックスXLC-4L、融点:62℃)
13重量部
(c)アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテックス(株)製、WS-023) 100重量部
(d)球状シリカ(アドマテックス(株)製、SO-25R) 1287重量部
下記(a)~(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)エポキシ樹脂(JER(株)製、エピコート1004)
113重量部
(b)フェノール樹脂(三井化学(株)製、ミレックスXLC-4L)
121重量部
(c)アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテックス(株)製、WS-023) 100重量部
(d)球状シリカ(アドマテックス(株)製、SO-25R) 222重量部
下記(a)~(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)エポキシ樹脂(JER(株)製、エピコート1004)
113重量部
(b)フェノール樹脂(三井化学(株)製、ミレックスXLC-4L)
121重量部
(c)アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテックス(株)製、WS-023) 100重量部
(d)球状シリカ(アドマテックス(株)製、SO-25R) 37重量部
下記(a)~(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)エポキシ樹脂(JER(株)製、エピコート1001)
32重量部
(b)フェノール樹脂(三井化学(株)製、MEH7851)
34重量部
(c)アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテックス(株)製、WS-023) 100重量部
(d)球状シリカ(アドマテックス(株)製、SO-25R) 110重量部
下記(a)~(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)エポキシ樹脂(JER(株)製、エピコート1001)
32重量部
(b)フェノール樹脂(三井化学(株)製、ミレックスXLC-4L)
34重量部
(c)アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテックス(株)製、WS-023) 100重量部
(d)球状シリカ(アドマテックス(株)製、SO-25R) 18重量部
下記(a)~(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)エポキシ樹脂(JER(株)製、エピコート827)
11重量部
(b)フェノール樹脂(三井化学(株)製、ミレックスXLC-4L)
13重量部
(c)アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテックス(株)製、WS-023) 100重量部
(d)球状シリカ(アドマテックス(株)製、SO-25R) 7重量部
<ダイシングフィルム用の基材の準備>
(基材A)
ポリプロピレンとエチレン-プロピレンラバーとの混合樹脂からなる層(厚み80μm)と、LLDPE(直鎖状低密度ポリエチレン)からなる層(厚み20μm)とを積層させたオレフィン系多層フィルム(厚み100μm、背面(LLDPE層側)にエンボス処理あり)を準備した。このオレフィン系多層フィルムの接触部に相当する部分に表面から生ペットフィルム(帝人デュポン社製、製品名「テイジンテトロンフィルム」、厚さ16μm)を貼り合わせた。
SEBS(スチレン系エラストマー)及びMBS(メタクリル酸エステル‐ブタジエン‐スチレンからなる共重合体樹脂)からなる層(厚さ105μm)と、SEBSからなる層(厚さ30μm)と、PE(ポリエチレン)からなる層(厚さ15μm)とをこの順に積層させた多層フィルム(厚さ150μm、背面(PE層側)にエンボス処理あり)を準備した。
塩化ビニルフィルム(三菱樹脂社製、製品名「アルトロン#2800」、厚さ100μm)の背面にエンボス処理を行ったものを準備した。
塩化ビニルフィルム(三菱樹脂社製、製品名「アルトロン#2800」、厚さ100μm)を準備した(エンボス処理なし)。
SEBS(スチレン系エラストマー)及びMBS(メタクリル酸エステル‐ブタジエン‐スチレンからなる共重合体樹脂)からなる層(厚さ50μm)と、SEBSからなる層(厚さ85μm)と、PE(ポリエチレン)からなる層(厚さ15μm)とをこの順に積層させた多層フィルム(厚さ150μm、背面(PE層側)にエンボス処理あり)を準備した。
LDPE(低密度ポリエチレン)フィルム(日東電工社製、製品名「NOフィルム」、厚さ120μm、背面にエンボス処理あり)を準備した。
塩化ビニルフィルム(三菱樹脂社製、製品名「アルトロン#3300」、厚さ100μm)の背面にエンボス処理を行ったものを準備した。
基材A(オレフィン系多層フィルム)を準備した。このオレフィン系多層フィルムの接触部に相当する部分に背面からペットフィルム(日東電工社製、製品名「BT-315」、厚さ70μm)を貼り合わせた。
塩化ビニルフィルム(三菱樹脂社製、製品名「アルトロン#2800」、厚さ100μm)の背面にエンボス処理を行ったものを準備した。この塩化ビニルフィルムのウェハ貼付部に相当する部分に背面からペットフィルム(日東電工社製、製品名「BT-315」、厚さ70μm)を貼り合わせた。
基材A(オレフィン系多層フィルム)を準備した。このオレフィン系多層フィルムの接触部に相当する部分に背面から、片面がシリコーン処理されたペットフィルム(帝人デュポン社製、製品名「テイジンテトロンフィルム」、厚さ16μm)を、シリコーン処理面が背面となるように貼り合わせた。なお、基材Aの背面とペットフィルムとの貼り合わせには、下記の粘着剤を用いた。
冷却管、窒素導入管、温度計、及び、撹拌装置を備えた反応容器に、アクリル酸-2-エチルヘキシル(以下、「2EHA」ともいう。)88.8部、アクリル酸-2-ヒドロキシエチル(以下、「HEA」ともいう。)11.2部、過酸化ベンゾイル0.2部、及び、トルエン65部を入れ、窒素気流中で61℃にて6時間重合処理をし、重量平均分子量85万のアクリル系ポリマーAを得た。2EHAとHEAとのモル比は100mol対20molとした。
粘着剤層Aを基材A~基材Jにそれぞれ貼り合わせ、ウェハ貼付部にのみ紫外線照射装置(日東精機製、商品名「UM-810」)にて300mJ/cm2の紫外線を基材側から照射し、ダイシングフィルムを得た。このダイシングフィルムにダイボンドフィルムA~Fを貼り合わせ、ダイシング・ダイボンドフィルムを得た。基材A~基材JとダイボンドフィルムA~Fとの組合せは、下記表1及び表2に示す通りである。
ダイボンドフィルムA~Jについて、それぞれ幅10m、長さ30mm、厚さ40μmの短冊状の測定片となる様に切断した。次に、引っ張り試験機(テンシロン、島津製作所社製)を用いて25℃の条件下において、引張速度0.5mm/分、チャック間距離20mmで延伸し、破断伸び率を下記式により得た。結果を表1に示す。
破断伸び率(%)=(((破断時のチャック間長さ(mm))-20)/20)×100
ダイボンドフィルムA~Jについて、それぞれ厚さ200μm、幅10mmの短冊状とした。次に、固体粘弾性測定装置(RSA(III)、レオメトリックサイエンティフィック社製)を用いて、-50~300℃での引張貯蔵弾性率を周波数1Hz、昇温速度10℃/分の条件下にて測定した。その際の、25℃における引張貯蔵弾性率を表1、表2に示す。
得られたダイシングフィルムのウェハ貼付部と、接触部を含む部分とをそれぞれ幅10mm、長さ60mmの試料を作製した。次に、これらの試料について、引っ張り試験機(テンシロン、島津製作所社製)を用いて25℃、引張速度300mm/分、チャック間距離50mmの条件下で応力-ひずみ曲線を測定し、降伏点伸度を得た。
降伏点伸度(%)=(((降伏時のチャック間長さ(mm))-50)/50)×100
得られたダイシングフィルムのウェハ貼付部と接触部を含む部分とを、それぞれ幅25mmの試料を作製した。次に、この試料について、引っ張り試験機(テンシロン、島津製作所社製)を用いて25℃、チャック間距離100mm、引っ張り速度300mm/minでの10%延び時の引張強度を得た。なお、測定した引張強度は、MD(Machine Direction)方向の引張強度である。結果を表1、表2に示す。
[(接触部の引張強度)-(ウェハ貼付部の引張強度)]を算出した。結果を表1、表2に示す。
得られたダイシングフィルムの接触部の動摩擦係数を測定した。動摩擦係数は以下のようにして測定した。
得られたダイシングフィルムを平滑なミラーウェハに貼り合わせて固定し、接触部の表面粗さRaを表面粗さ測定機(ミツトヨ社製、製品名「サーフテストSJ-301」)を用いてMD方向に測定して求めた。結果を表1、表2に示す。
ダイシング・ダイボンドフィルムのウェハ貼付部を100mm×100mmの大きさに切り出し、ダイボンドフィルムの表面側にペットフィルム(日東電工社製、製品名「BT-315」、厚さ70μm)を貼り合わせた。その後、引っ張り試験機(テンシロン、島津製作所社製)を用いて、ダイシングフィルム側から剥離し、そのときの剥離強度を測定した。そして、得られた値を5で除することにより、20mm幅での剥離強度を算出した。測定条件は、23℃、剥離角度180度、剥離速度300mm/分とした。結果を表1、表2に示す。
<レーザー光を照射して分割予定ライン4L上に改質領域を形成する工程(工程1)を採用した場合>
レーザー加工装置として株式会社東京精密製、ML300-Integrationを用いて半導体ウェハの内部に集光点を合わせ、格子状(10mm×10mm)の分割予定ラインに沿って半導体ウェハの表面側からレーザー光を照射し、半導体ウェハの内部に改質領域を形成した。半導体ウェハは、シリコンウェハ(厚さ50μm、外径12インチ)を用いた。また、レーザー光照射条件は、下記のようにして行った。
(A)レーザー光
レーザー光源 半導体レーザー励起Nd:YAGレーザー
波長 1064nm
レーザー光スポット断面積 3.14×10-8cm2
発振形態 Qスイッチパルス
繰り返し周波数 100kHz
パルス幅 30ns
出力 20μJ/パルス
レーザー光品質 TEM00 40
偏光特性 直線偏光
(B)集光用レンズ
倍率 50倍
NA 0.55
レーザー光波長に対する透過率 60%
(C)半導体基板が載置される裁置台の移動速度 100mm/秒
半導体ウェハ(厚さ500μm)にブレードダイシング加工により格子状(10mm×10mm)の切り込み溝を形成した。切り込み溝の深さは、250μmとした。
次に、この半導体ウェハの表面を保護テープにて保護し、厚さが50μmとなるまで裏面研削を行い、分割された個々の半導体チップ(10mm×10mm×50μm)を得た。これを実施例、比較例のダイシング・ダイボンドフィルムのそれぞれに貼り合わせた後、破断試験を行った。破断試験におけるエキスパンド条件は、室温(25℃)、エキスパンド速度400mm/秒、エキスパンド量20mmとした。破断試験の結果は、上記工程1の場合と同様、破断不良の箇所がなかった場合を○、破断不良の箇所があった場合を×とした。結果を表1、表2に示す。
ダイシングフィルム側からニードルで突き上げて、ダイシングにより得られた半導体チップをダイボンドフィルムとともに粘着剤層からピックアップした。ピックアップ条件は、下記のとおりである。下記条件にて、ピックアップできたものを○、できなかったものを×とした。結果を表1、表2に示す。
[ピックアップ条件]
ピックアップ装置:商品名「SPA-300」株式会社新川社製
ピックアップニードル本数:9本
ニードル突き上げ速度:5mm/s
ニードル突き上げ量 : 600μm
ピックアップ時間:1秒
エキスパンド量 : 12.5mm
ニードル型: F0.7*15deg*10l*350μm
コレット: MICRO-MECHANICS社製、製品名「RUBBER TIP」、品番13-034-126
Claims (4)
- ダイシングフィルム上にダイボンドフィルムが設けられたダイシング・ダイボンドフィルムであって、
半導体ウェハにレーザー光を照射して改質領域を形成した後、前記半導体ウェハを前記改質領域にて破断することにより半導体ウェハから半導体素子を得る方法、又は、半導体ウェハの表面に裏面まで達しない溝を形成した後、前記半導体ウェハの裏面研削を行い、前記裏面から前記溝を表出させることにより半導体ウェハから半導体素子を得る方法に使用されるものであり、
前記ダイシングフィルムは、ダイシングリングを貼り付けるリング貼付部を外周部分に有するとともに、前記リング貼付部よりも内側に半導体ウェハを貼り付けるウェハ貼付部を有しており、さらに、前記リング貼付部と前記ウェハ貼付部との間に、突き上げ治具の外周が接触する接触部を有しており、
前記ダイシングフィルムの前記接触部における25℃での引張強度が、15N以上80N以下であり、且つ、降伏点伸度が80%以上であり、
前記ダイシングフィルムの前記ウェハ貼付部における25℃での引張強度が、10N以上70N以下であり、且つ、降伏点伸度が30%以上であり、
[(前記接触部の引張強度)-(前記ウェハ貼付部の引張強度)]が、0N以上60N以下であり、
前記ダイボンドフィルムの25℃での破断伸び率が40%より大きく500%以下であることを特徴とするダイシング・ダイボンドフィルム。 - 前記ダイシングフィルムは、少なくとも前記接触部において、基材と補強部材とが積層された構造を有していることを特徴とする請求項1に記載のダイシング・ダイボンドフィルム。
- 前記ダイシングフィルムの前記接触部の動摩擦係数が、0~0.02であることを特徴とする請求項1又は2に記載のダイシング・ダイボンドフィルム。
- 前記接触部の表面粗さRaが0.03μm以上1.5μm以下である、又は、前記接触部が潤滑剤処理されていることを特徴とする請求項3に記載のダイシング・ダイボンドフィルム。
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Also Published As
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JP2012079936A (ja) | 2012-04-19 |
TWI521578B (zh) | 2016-02-11 |
US9142457B2 (en) | 2015-09-22 |
CN103140917A (zh) | 2013-06-05 |
KR20130116261A (ko) | 2013-10-23 |
US20130330910A1 (en) | 2013-12-12 |
CN103140917B (zh) | 2016-08-24 |
TW201222651A (en) | 2012-06-01 |
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