WO2022264546A1 - 導電性シート及びダイシングダイボンドフィルム - Google Patents
導電性シート及びダイシングダイボンドフィルム Download PDFInfo
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- WO2022264546A1 WO2022264546A1 PCT/JP2022/009950 JP2022009950W WO2022264546A1 WO 2022264546 A1 WO2022264546 A1 WO 2022264546A1 JP 2022009950 W JP2022009950 W JP 2022009950W WO 2022264546 A1 WO2022264546 A1 WO 2022264546A1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
Definitions
- the present invention relates to a conductive sheet and a dicing die-bonding film.
- a conductive sheet as a method (die bonding method) for bonding a semiconductor element (semiconductor chip) to an adherend such as a metal lead frame in the manufacture of a semiconductor device (for example, the following patent document 1).
- Patent Literature 1 listed below discloses a conductive sheet containing conductive particles and a thermosetting resin. Further, in Patent Document 1 below, a semiconductor element (semiconductor chip) is attached to one surface of the conductive sheet, and then the other surface of the conductive sheet is brought into contact with an adherend such as a metal lead frame. Later, it is disclosed that the conductive sheet is heat-cured at a predetermined temperature (for example, 200° C.) and adhered to an adherend such as a metal lead frame.
- a predetermined temperature for example, 200° C.
- a semiconductor wafer for example, TAIKO (registered trademark) wafer
- TAIKO (registered trademark) wafer produced by mechanical grinding so as to leave a ring-shaped inner portion up to several tens of mm from the outer peripheral edge.
- Patent Document 2 Japanese Patent Application Laid trademark
- the TAIKO (registered trademark) wafer has a stepped portion formed between the ring-shaped portion and the inner portion thereof, and the maximum height of the stepped portion is usually about 450 ⁇ m.
- the thickness of the flat plate portion obtained by mechanical grinding is usually about 20 ⁇ m.
- a stepped portion is formed between the ring-shaped portion and the inner portion thereof. That is, such a semiconductor wafer is a semiconductor wafer having a stepped portion. Therefore, in obtaining a semiconductor element (semiconductor chip), if the conductive sheet is attached to a semiconductor wafer having a stepped portion as described above, the conductive sheet may not sufficiently follow the stepped portion. In such a case, between the semiconductor wafer having the stepped portion and the conductive sheet, there is a relatively large gap (from the edge of the stepped portion) toward the center of the semiconductor wafer having the stepped portion from the edge of the stepped portion.
- voids formed to the inner side exceeding 500 ⁇ m may occur.
- the conductive sheet is diced from the gap as a starting point for the semiconductor wafer having the stepped portion. It becomes easy to peel off from.
- the semiconductor element semiconductor chip
- the conductive sheet does not have sufficient characteristics. cannot be shown.
- an object of the present invention is to provide a conductive sheet that can sufficiently follow a stepped portion when attached to a semiconductor wafer having a stepped portion, and a dicing die-bonding film comprising the conductive sheet.
- the conductive sheet according to the present invention is A conductive sheet containing a binder resin and conductive particles, Viscosity at 70 ° C. is 10 kPa s or more and 10000 kPa s or less, The elongation at break at 70°C is 110% or more.
- the content of the conductive particles is 85% by mass or more and 97% by mass or less.
- the conductive particles contain at least one selected from the group consisting of silver particles, copper particles, silver oxide particles, and copper oxide particles.
- thermosetting resin In the conductive sheet, What the said binder resin contains a thermosetting resin is preferable.
- the conductive sheet It is preferable to further include a volatile component having a volatilization start temperature of 100° C. or higher.
- the dicing die-bonding film according to the present invention is a dicing tape having an adhesive layer laminated on a base material layer; A conductive sheet laminated on the adhesive layer of the dicing tape, The conductive sheet is any of the conductive sheets described above.
- FIG. 4A and 4B are schematic cross-sectional views for explaining a state of a wafer mounting process;
- FIG. 4 is a schematic cross-sectional view for explaining a state of a dicing die-bonding film placement step;
- FIG. 4 is a schematic cross-sectional view for explaining the state of a dicing die-bonding film contacting step;
- FIG. 4 is a schematic cross-sectional view for explaining the state of a dicing die-bonding film adhesion step;
- the conductive sheet according to this embodiment contains a binder resin and conductive particles.
- conductive particles mean particles having an electrical conductivity of 100 ⁇ S/cm or less as measured according to JIS K 0130 (2008).
- the conductive sheet according to the present embodiment has a viscosity of 10 kPa ⁇ s or more and 10000 kPa ⁇ s or less at 70°C. Furthermore, the conductive sheet according to the present embodiment has an elongation at break of 110% or more at 70°C.
- the viscosity at 70°C may be denoted by the reference number ⁇
- the elongation at break at 70°C may be denoted by the reference number Bpe.
- the sheet shape of the conductive sheet can be sufficiently maintained, and when the viscosity at 70°C is 10000 kPa s or less, the conductive sheet can have moderate hardness. Furthermore, since the elongation at break at 70° C. is 110% or more, the conductive sheet can have excellent toughness, that is, the conductive sheet can be made highly ductile and has excellent strength. can be made into By having the above characteristics, the conductive sheet according to the present embodiment can sufficiently follow the stepped portion when attached to the semiconductor wafer having the stepped portion. In this specification, the ability to sufficiently follow the stepped portion means that the gap generated from the edge of the stepped portion toward the center of the semiconductor wafer having the stepped portion is 500 ⁇ m or less.
- the conductive sheet When the viscosity at 70° C. is less than 10 kPa ⁇ s, the conductive sheet cannot maintain its sheet shape and becomes a pasty conductive composition. Since such a paste-like conductive composition is highly deformable, the paste-like conductive composition can sufficiently follow the stepped portion of a semiconductor wafer having a stepped portion. Difficult to install with uniform thickness. Further, when the conductive sheet is a pasty conductive composition, it becomes difficult to transfer the conductive sheet to a semiconductor wafer having a stepped portion in the state of a dicing die-bonding film.
- the semiconductor wafer having the stepped portion is cut inside the stepped portion after the conductive sheet is attached to obtain a flat semiconductor wafer, and then the flat semiconductor wafer is diced into a plurality of semiconductor wafers. It is cleaved into semiconductor chips.
- the semiconductor chip is used as a component of a semiconductor device by being attached to an adherend such as a metal lead frame.
- the conductive sheet is a paste-like conductive composition, dicing cannot be performed with high accuracy.
- the pasty conductive composition creeps up from the edge of the semiconductor chip. In this way, if the pasty conductive composition creeps up, it is not preferable because it causes a short circuit when used as a part of a semiconductor device.
- binder resins include thermoplastic resins and thermosetting resins.
- the conductive sheet according to this embodiment preferably contains a thermosetting resin.
- the conductive sheet can be thermoset, so that the adhesiveness to the adherend (for example, a metal lead frame) can be enhanced.
- the conductive sheet according to the present embodiment contains a thermoplastic resin in addition to the thermosetting resin.
- the thermoplastic resin By containing the thermoplastic resin in addition to the thermosetting resin, the conductive sheet can have relatively low elasticity even after the conductive sheet is thermoset.
- the thermoplastic resin since the thermoplastic resin is included, the viscosity ⁇ at 70° C. of the conductive sheet can be relatively easily adjusted to 10 kPa ⁇ s or more and 10000 kPa ⁇ s or less.
- thermosetting resin examples include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Among these, it is preferable to use an epoxy resin.
- Epoxy resins include, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, cresol novolak type, ortho-cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins.
- Bisphenol A type epoxy resins include aliphatic modified bisphenol A type epoxy resins.
- phenolic resins used as curing agents for epoxy resins include novolak-type phenolic resins, resol-type phenolic resins, biphenyl-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene.
- novolak-type phenolic resins novolak-type phenolic resins
- resol-type phenolic resins biphenyl-type phenolic resins
- polyoxystyrenes such as polyparaoxystyrene.
- thermosetting resin a thermoplastic resin having a thermosetting functional group
- thermoplastic resins having thermosetting functional groups include thermosetting functional group-containing acrylic resins.
- acrylic resins in thermosetting functional group-containing acrylic resins include those containing monomer units derived from (meth)acrylic acid esters.
- a curing agent is selected according to the type of thermosetting functional group.
- thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin.
- thermoplastic polyimide resins examples include polyamide resins such as polyamide 6 and polyamide 6,6, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Only one type of the thermoplastic resin may be used, or two or more types may be used in combination.
- an acrylic resin is preferable from the viewpoint that connection reliability by the conductive sheet can be easily ensured because of its low ionic impurity content and high heat resistance.
- the acrylic resin is preferably a polymer containing monomer units derived from (meth)acrylic acid esters as the monomer units having the largest mass ratio.
- (Meth)acrylic acid esters include, for example, (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, and (meth)acrylic acid aryl esters.
- the acrylic resin may contain monomer units derived from other components copolymerizable with the (meth)acrylic acid ester.
- Examples of other components include carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, and functional group-containing monomers such as acrylamide and acrylonitrile. Examples include monomers and various polyfunctional monomers.
- the acrylic resin is preferably a carboxyl group-containing acrylic polymer.
- the binder resin accounts for 100% by mass (parts by mass) of the conductive sheet. % or more and 25 mass % or less.
- the mass of the thermosetting resin in 100% by mass of the conductive sheet % is preferably 1% by mass or more and 30% by mass or less, and more preferably 2% by mass or more and 18% by mass or less.
- the mass% of the thermoplastic resin in 100% by mass of the conductive sheet is preferably 0.5% by mass or more and 10% by mass or less, and more preferably 1% by mass or more and 7% by mass or less. preferable.
- the mass ratio of the thermosetting resin to 100% by mass of the binder resin is 30% by mass or more and 90% by mass or less. and more preferably 40% by mass or more and 70% by mass or less.
- the conductive particles include particles such as silver particles, silver oxide particles, nickel particles, copper particles, copper oxide particles, aluminum particles, carbon black, and carbon nanotubes; Alternatively, particles plated with a metal such as silver (hereinafter also referred to as plated metal particles), and particles in which the surface of a resin particle serving as a core (nucleus) is coated with a metal (hereinafter also referred to as metal-coated resin particles), etc. mentioned. Only one type of these conductive particles may be used, or two or more types may be used in combination.
- the conductive sheet according to the present embodiment may contain at least one selected from the group consisting of silver particles, copper particles, silver oxide particles, and copper oxide particles. preferable. By containing the above-described conductive particles, the conductive sheet exhibits sufficient electrical conductivity and thermal conductivity.
- the shape of particles such as silver particles, silver oxide particles, nickel particles, copper particles, copper oxide particles, aluminum particles, carbon black, and carbon nanotubes is, for example, flake-like, needle-like, filament-like, spherical, and flat. (including scaly) can be used, and among these, spherical ones are preferably used.
- spherical particles By using spherical particles, the dispersibility of these particles in the conductive sheet can be enhanced.
- the conductive sheet according to the present embodiment particularly preferably contains silver particles.
- the silver particles may be silver particles composed of silver elements and other elements (such as metal elements) contained as unavoidable impurity elements, or may be surface-treated (for example, silane coupling treatment). It may be silver particles.
- surface treatment agents for silver particles include coating agents such as fatty acid-based, amine-based, and epoxy-based coating agents.
- silver particles surface-treated with a coating agent such as a fatty acid-based, amine-based, or epoxy-based coating agent may be referred to as coating agent-treated silver particles.
- the plated metal particles for example, particles obtained by using a nickel particle or a copper particle as a nucleus and plating the surface of the nucleus with a noble metal such as gold or silver can be used.
- the metal-coated resin particles for example, particles obtained by using a resin particle as a nucleus and coating the surface of the nucleus with a metal such as nickel or gold can be used.
- the shape of the plated metal particles and the metal-coated resin particles for example, flake-like, needle-like, filament-like, spherical, and flat (including scale-like) shapes can be used, and among these, spherical ones can be used. is preferably used. By using spherical plated metal particles and metal-coated resin particles, the dispersibility of the plated metal particles and metal-coated resin particles in the conductive sheet can be enhanced.
- the conductive sheet according to the present embodiment contains plated metal particles
- particles silver-coated copper particles obtained by using a copper particle as a core and plating the surface of the core with silver as the plated metal particle.
- the silver-coated copper particles include flat copper particles coated with a silver layer of 10% by mass and spherical copper particles coated with a silver layer of 20% by mass.
- the content of the conductive particles in 100% by mass (parts by mass) of the conductive sheet is 60% by mass or more and 98% by mass. %, more preferably 80% by mass or more and 97% by mass or less, and even more preferably 85% by mass or more and 97% by mass or less.
- the conductive sheet according to the present embodiment preferably contains silver particles and silver-coated copper particles as the conductive particles.
- the amount of the silver particles in 100 parts by mass of the conductive particles is preferably 10 parts by mass or more and 95 parts by mass or less, more preferably 20 parts by mass or more and 90 parts by mass or less. preferable.
- the viscosity ⁇ at 70° C. is preferably 50 kPa ⁇ s or more, more preferably 70 kPa ⁇ s or more, and even more preferably 100 kPa ⁇ s or more. Also, the viscosity ⁇ at 70° C. is preferably 7000 kPa ⁇ s or less, more preferably 5000 kPa ⁇ s or less, and even more preferably 3500 kPa ⁇ s or less.
- the sheet shape of the conductive sheet can be more sufficiently maintained, and the conductive sheet has a more appropriate hardness. can be
- the viscosity ⁇ at 70° C. can be evaluated using a rheometer (rotary rheometer HAAKE MARS manufactured by Thermo Fisher Scientific). Specifically, when the gap value is 250 ⁇ m, the frequency is 1 Hz, and the strain amount is 0.1%, the temperature is increased from 30° C. to 180° C. at a temperature increase rate of 10° C./min. It can be obtained by reading the indicated value at 70°C.
- a rheometer rotary rheometer HAAKE MARS manufactured by Thermo Fisher Scientific
- the elongation at break Bpe at 70°C is preferably 112% or more, more preferably 113% or more, and even more preferably 114% or more.
- the conductive sheet can be made even more excellent in toughness. That is, the conductive sheet can be made more ductile and more excellent in strength.
- the upper limit of the elongation at break Bpe at 70°C is usually 200%.
- the elongation at break Bpe at 70° C. can be evaluated using a tensile tester (for example, model “AGS-X” manufactured by Shimadzu Corporation). Specifically, it can be evaluated as follows. (1) Prepare a conductive sheet with a width of 10 mm, a length of 30 mm, and a thickness of 200 ⁇ m. (2) A test piece is obtained by attaching a polyimide tape to both ends of the conductive sheet in the length direction. Specifically, for the conductive sheet, a polyimide tape is attached to an area up to 10 mm along the length direction from the upper edge in the length direction, and 10 mm along the length direction from the lower edge in the length direction. A test piece is obtained by pasting a polyimide tape on the area up to .
- a tensile tester for example, model “AGS-X” manufactured by Shimadzu Corporation.
- the conductive sheet according to the present embodiment has a viscosity ⁇ at 70°C and an elongation at break at 70°C by appropriately adjusting the content ratio of the binder resin and the content ratio of the conductive particles in the conductive sheet. It can be obtained by appropriately adjusting Bpe.
- the viscosity ⁇ at 70° C. is adjusted to a high value by increasing the content ratio of the conductive particles in the conductive sheet, or lowered by decreasing the content ratio of the conductive particles. value can be adjusted.
- the elongation at break at 70 ° C. is adjusted to a high value by decreasing the content ratio of the conductive particles in the conductive sheet, or by increasing the content ratio of the conductive particles. It can be adjusted to a lower value.
- the conductive sheet according to the present embodiment contains a thermosetting resin and a thermoplastic resin as the matrix resin
- the content ratio of the thermosetting resin and the content ratio of the thermoplastic resin are can be obtained by appropriately adjusting the viscosity ⁇ at 70°C and the elongation at break Bpe at 70°C.
- the conductive sheet according to the present embodiment preferably further contains a volatile component having a volatilization start temperature of 100° C. or higher.
- the volatile component is more preferably a component that volatilizes at 200° C. or higher, more preferably a component that volatilizes at 250° C. or higher.
- Examples of such volatile components include organic compounds containing one or more hydroxyl groups and having a volatilization start temperature of 100° C. or higher.
- the boiling point of the organic compound is preferably 200° C. or higher, more preferably 250° C. or higher.
- the boiling point of the organic compound is preferably 350° C. or lower.
- Such organic compounds include terpene compounds.
- isobornylcyclohexanol represented by the following formula (1) is preferable as the volatile component.
- isobornylcyclohexanol is an organic compound having a boiling point of 308 to 318° C., and under a nitrogen gas stream of 200 mL/min, at a temperature rising condition of 10° C./min, from room temperature (23 ⁇ 2° C.) When the temperature is raised to 600 ° C., the mass decreases significantly from 100 ° C. or higher (volatilization starts), and the volatilization is completed at 245 ° C. (no further mass decrease is observed).
- the conductive sheet containing isobornylcyclohexanol has excellent sheet shape retention at room temperature and has tackiness at temperatures of 60° C. or higher. Therefore, when mounting a semiconductor element attached to one side of a conductive sheet on a metal lead frame or the like, the semiconductor element is usually mounted on the metal lead frame or the like via the conductive sheet at a temperature of 60 to 80°C. Although it is temporarily attached (temporarily fixed) to the adherend, isobornylcyclohexanol has tackiness at 60° C. or higher as described above, so that the conductive sheet according to the present embodiment contains isobornyl as a volatile component.
- the conductive sheet When cyclohexanol is included, the conductive sheet has improved temporary adhesion to an adherend such as a metal lead frame. That is, in the temporarily attached state, it is possible to prevent the mounting position of the semiconductor element from shifting and the lifting of the conductive sheet from the adherend. Moreover, when the conductive sheet contains a thermosetting resin and the semiconductor element is adhered to the adherend by thermosetting the conductive sheet, the adhesion can be performed with high reliability.
- the conductive sheet according to the present embodiment preferably contains 10 parts by mass or more of the volatile component with respect to 100 parts by mass of the binder resin.
- the conductive sheet according to the present embodiment preferably contains 200 parts by mass or less of the volatile component, more preferably 150 parts by mass or less, relative to 100 parts by mass of the binder resin. It is more preferable to contain 100 parts by mass or less.
- the volume of the conductive sheet can be reduced by heating the conductive sheet at 200° C. or higher to volatilize the volatile component.
- the conductive particles are in a close positional relationship in the conductive sheet to the extent that the volume is reduced. It becomes easier to form a heat conduction path. Thereby, the thermal conductivity of the conductive sheet can be made relatively high.
- the conductive sheet according to the present embodiment contains silver particles and silver-coated copper particles as described above, spherical particles are used as silver-coated copper particles. Since the specific surface area is small, the contact area between the silver-coated copper particles and the silver particles is smaller than when spherical particles are used as the silver particles and flat particles are used as the silver-coated copper particles. It is also considered to be disadvantageous from the viewpoint of thermal conductivity.
- the conductive sheet according to the present embodiment contains a volatile component having a volatilization start temperature of 100° C. or higher, as described above, the conductive sheet is heated at a temperature of 150 to 200° C. The volatile components can be relatively sufficiently volatilized when heat-curing or the like.
- the volume of the conductive sheet can be reduced relatively sufficiently, in other words, the volume of the conductive sheet can be shrunk relatively sufficiently, so that the silver-coated copper particles and the silver particles are positioned close to each other. can be related. Therefore, even when spherical particles are used as the silver-coated copper particles, a sufficient contact area between the silver-coated copper particles and the silver particles can be secured, thereby sufficiently improving electrical conductivity and thermal conductivity. can be secured to
- thermosetting resin when the conductive sheet according to the present embodiment contains a thermosetting resin, it contains a thermosetting catalyst from the viewpoint of sufficiently advancing the curing reaction of the thermosetting resin and increasing the curing reaction rate.
- thermosetting catalysts include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds.
- the thickness of the conductive sheet according to this embodiment is preferably 5 ⁇ m or more, more preferably 10 ⁇ m or more, and even more preferably 20 ⁇ m or more. Also, the thickness of the conductive sheet is preferably 150 ⁇ m or less, more preferably 100 ⁇ m or less, and even more preferably 80 ⁇ m or less. When the thickness of the conductive sheet is 150 ⁇ m or less, thermal conductivity can be further improved.
- a dial gauge PEACOCK, model R-205
- PDACOCK model R-205
- the thermal conductivity after thermosetting is preferably 1 W/m ⁇ K or more, more preferably 3 W/m ⁇ K or more. , 10 w/m ⁇ K or more.
- the thermal conductivity after thermosetting satisfies the above numerical range, the conductivity of the conductive sheet can be further increased.
- the maximum upper limit of the thermal conductivity after thermosetting is 420 W/m ⁇ K.
- the upper limit of the thermal conductivity after thermosetting may be 200 W/m ⁇ K.
- the thermal conductivity after thermal curing was obtained by thermally curing the conductive sheet according to the present embodiment at 200 ° C. for 1 hour while applying a pressure of 0.5 MPa in a pressure cooker. For the conductive sheet, it can be calculated by the following formula.
- the thermal diffusivity (m 2 /s) in the above formula can be measured by the TWA method (temperature wave thermal analysis method, measuring device: iphase mobile, manufactured by iphase).
- the specific heat (J/g ⁇ ° C.) in the above formula can be measured by the DSC method. Specific heat measurement is performed using a DSC6220 manufactured by SII Nanotechnology Co., Ltd. under the conditions of a temperature increase rate of 10 ° C./min and a temperature range of 20 to 300 ° C. Based on the obtained data, the JIS handbook (specific heat capacity measurement method K -7123) can be used to calculate the specific heat.
- the specific gravity in the above formula can be measured by the Archimedes method.
- the conductive sheet according to the present embodiment may contain one or more other components as necessary.
- Other ingredients include, for example, filler dispersants, flame retardants, silane coupling agents, and ion trapping agents.
- At least one surface of the conductive sheet according to the present embodiment is an adhesive surface to be adhered to an adherend.
- the conductive sheet according to this embodiment can be used for adhesion to an adherend having at least a part of the surface serving as an adhesion area to which the conductive sheet is adhered.
- the conductive sheet according to the present embodiment exhibits good conformability to the uneven portion even when unevenness is formed in the adhesive region.
- the conductive sheet according to the present embodiment has a bonding surface to be bonded to both the circular concave portion and the annular convex portion of a semiconductor wafer provided with a circular concave portion and an annular convex portion surrounding the circular concave portion on one side. By having it, the effect can be exhibited remarkably.
- annular convex portion of the semiconductor wafer is formed in a state of protruding from the surface of the circular concave portion, a stepped portion is formed at the boundary between the two. , and exhibits good followability even at locations where such stepped portions are formed.
- the conductive sheet according to the present embodiment may have an adhesive surface large enough to cover all of the circular recess, covers all of the circular recess, furthermore, a part of the annular protrusion, Alternatively, it may have an adhesive surface that can cover the entire surface.
- the height of the step portion may be 50 ⁇ m or more and 500 ⁇ m or less.
- the dicing die bond film 20 includes a dicing tape 10 in which an adhesive layer 2 is laminated on a base layer 1, and a dicing tape 10 laminated on the adhesive layer 2 of the dicing tape 10. and a conductive sheet 3.
- a semiconductor element is stuck on the conductive sheet 3 .
- the semiconductor device may be a bare wafer.
- a bare wafer attached to the dicing die-bonding film 20 according to the present embodiment is cut into a plurality of bare chips by blade dicing, DBG (Dicing Before Grinding), SDBG (Stealth Dicing Before Grinding), or the like.
- the conductive sheet 3 is also cut together with the bare wafer.
- the conductive sheet 3 is cut into a size corresponding to the size of a plurality of singulated bare chips. As a result, a plurality of bare chips with conductive sheets 3 can be obtained.
- the conductive sheet 3 of the dicing die-bonding film 20 contains a binder resin and conductive particles as described above.
- the conductive sheet 3 of the dicing die-bonding film 20 has a viscosity of 10 kPa ⁇ s or more and 10000 kPa ⁇ s or less at 70°C.
- the conductive sheet 3 of the dicing die-bonding film 20 has an elongation at break of 110% or more at 70° C., as described above.
- the base material layer 1 supports the adhesive layer 2 and the conductive sheet 3 laminated on the adhesive layer 2 .
- the base material layer 1 contains resin.
- resins include olefin resins such as polyethylene (PE), polypropylene (PP), ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(meth)acrylic acid copolymer. , Ethylene-(meth) acrylic ester (random, alternating) copolymers with ethylene as a monomer component; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene terephthalate (PBT), etc.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PBT polybutylene terephthalate
- the base material layer 1 contains, as the resin, at least one selected from the group consisting of polypropylene (PP), polyvinyl chloride (PVC), and ethylene-vinyl acetate copolymer (EVA). is preferably included.
- PP polypropylene
- PVC polyvinyl chloride
- EVA ethylene-vinyl acetate copolymer
- the base material layer 1 has a first resin layer containing ethylene-vinyl acetate copolymer (EVA) as a central layer, and a second resin layer containing polypropylene (PP) on both surfaces of the first resin layer, And the third resin layer containing polyvinyl chloride (PVC) may be a laminated body respectively laminated.
- EVA ethylene-vinyl acetate copolymer
- PP polypropylene
- PVC polyvinyl chloride
- the base material layer 1 may contain one type of the above-described resin, or may contain two or more types of the above-described resin.
- Examples of materials for the base layer 1 include polymers such as crosslinked resins (for example, plastic films).
- the plastic film may be used without being stretched, or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat-shrinkability has been imparted by stretching treatment or the like, by heat-shrinking the base material layer 1 after dicing, the bonding area between the adhesive layer 2 and the conductive sheet 3 is reduced, and the semiconductor is formed. It is possible to facilitate recovery of chips (semiconductor elements).
- the surface of the base material layer 1 may be subjected to a general surface treatment in order to improve adhesion, retention, etc. with adjacent layers.
- surface treatments include chemical or physical treatments such as chromic acid treatment, ozone exposure, flame exposure, high voltage shock exposure, ionizing radiation treatment, and coating treatment with a primer.
- the thickness of the substrate layer 1 is preferably 1 ⁇ m or more and 1000 ⁇ m or less, more preferably 10 ⁇ m or more and 500 ⁇ m or less, even more preferably 20 ⁇ m or more and 300 ⁇ m or less, and particularly 30 ⁇ m or more and 200 ⁇ m or less. preferable.
- the thickness of the base material layer 1 can be determined using a dial gauge (Model R-205 manufactured by PEACOCK) in the same manner as the thickness of the conductive sheet 3 described above.
- the base material layer 1 may contain various additives.
- various additives include coloring agents, fillers, plasticizers, antioxidants, antioxidants, surfactants, flame retardants and the like.
- the adhesive used to form the adhesive layer 2 is not particularly limited, and for example, general pressure-sensitive adhesives such as acrylic adhesives and rubber adhesives can be used.
- an acrylic adhesive having an acrylic polymer as a base polymer is used from the standpoint of cleanability with ultrapure water or an organic solvent such as alcohol for electronic parts such as semiconductor wafers and glass, which should not be contaminated. is preferred.
- acrylic polymer examples include acrylic polymers using one or more of (meth)acrylic acid alkyl esters and (meth)acrylic acid cycloalkyl esters as monomer components.
- (Meth)acrylic acid alkyl esters include, for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopentyl ester, hexyl ester, Heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, oc
- (meth)acrylic acid cycloalkyl ester for example, cyclopentyl ester, cyclohexyl ester, and the like can be used.
- (meth)acrylic acid ester means at least one of acrylic acid ester and methacrylic acid ester, and (meth) in the present invention means the same content as described above.
- the acrylic polymer may optionally be added to other monomer components copolymerizable with the (meth)acrylic acid alkyl ester or (meth)acrylic acid cycloalkyl ester. May contain corresponding units.
- Such monomer components include carboxyl-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride; Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrene; Contains sulfonic acid such as sulfonic acid, allylsulfonic acid, 2-(meth)acrylamid
- the acrylic polymer since the acrylic polymer is crosslinked, it can contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary.
- polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, Pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate acrylates and the like.
- One or more of these polyfunctional monomers can also be used.
- the amount of the polyfunctional monomer used is preferably 30% by mass or less of the
- the acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. Polymerization may be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization and suspension polymerization. From the point of view of preventing contamination of a clean adherend, etc., it is preferable that the content of the low-molecular-weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.
- an external cross-linking agent can be appropriately added to the pressure-sensitive adhesive in order to increase the number average molecular weight of the base polymer, such as an acrylic polymer.
- Specific means of the external cross-linking method include a method of adding a cross-linking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine-based cross-linking agent to react.
- a cross-linking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine-based cross-linking agent to react.
- the amount used is appropriately determined in consideration of the balance with the base polymer to be cross-linked and the application as an adhesive.
- the external cross-linking agent is preferably blended in an amount of about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.
- the adhesive may contain additives such as various known tackifiers and anti-aging agents, as necessary, in addition to the above components.
- the adhesive layer 2 can be formed from a radiation-curable adhesive. Radiation-curable pressure-sensitive adhesives can be easily reduced in adhesive strength by increasing the degree of cross-linking by irradiation with radiation such as ultraviolet rays. That is, by forming the adhesive layer 2 with a radiation-curable adhesive, the conductive sheet 3 is sufficiently adhered to the adhesive layer 2 without irradiating the adhesive layer 2 with radiation before dicing, After dicing, by irradiating the adhesive layer 2 with radiation to reduce the adhesive strength of the adhesive layer 2, the semiconductor chips (semiconductor elements) can be easily picked up (recovered).
- radiation-curable adhesives can be easily reduced in adhesive strength by increasing the degree of cross-linking by irradiation with radiation such as ultraviolet rays. That is, by forming the adhesive layer 2 with a radiation-curable adhesive, the conductive sheet 3 is sufficiently adhered to the adhesive layer 2 without irradiating the adhesive layer 2 with radiation before dicing, After dicing, by irradi
- Radiation-curable adhesives can be used without any particular restrictions as long as they have radiation-curable functional groups such as carbon-carbon double bonds and exhibit adhesiveness.
- Radiation-curable pressure-sensitive adhesives include, for example, additive-type radiation-curable pressure-sensitive adhesives in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. is mentioned.
- the radiation-curable monomer component examples include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, ) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate and the like.
- the radiation-curable oligomer component includes various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. be.
- the blending amount of the radiation-curable monomer component and the radiation-curable oligomer component is preferably an amount that can suitably reduce the adhesive strength of the pressure-sensitive adhesive layer 2 after radiation irradiation.
- the amount of the radiation-curable monomer component and the radiation-curable oligomer component is, for example, 5 to 500 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer that constitutes the adhesive. parts, more preferably 40 to 150 parts by mass.
- the radiation-curable pressure-sensitive adhesives may include, as base polymers, those having a carbon-carbon double bond in the polymer side chain, in the main chain, or at the end of the main chain.
- the embedded type radiation-curable pressure-sensitive adhesive used can be mentioned.
- the internal radiation-curable pressure-sensitive adhesive does not need to contain an oligomer component or the like, which is a low-molecular component, or the content of the oligomer component or the like is relatively small. Therefore, when the internal radiation-curable adhesive is used, migration of the oligomer component and the like in the adhesive layer 2 over time is suppressed. As a result, the adhesive layer 2 can have a relatively stable layer structure.
- the base polymer having a carbon-carbon double bond can be used without any particular limitation as long as it has a carbon-carbon double bond and has adhesiveness.
- a base polymer one having an acrylic polymer as a basic skeleton is preferable.
- the basic skeleton of the acrylic polymer include the acrylic polymers described above.
- the method of introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. Molecular design becomes easier. For example, after copolymerizing a monomer having a functional group with an acrylic polymer in advance, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is added to the radiation-curing of the carbon-carbon double bond. Examples include a method of condensation reaction or addition reaction while maintaining the properties.
- combinations of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridyl group, and a hydroxyl group and an isocyanate group.
- a combination of a hydroxyl group and an isocyanate group is preferable from the viewpoint of ease of reaction tracking.
- any functional group is on the side of the acrylic polymer or the carbon-carbon double bond. Although it may be on the compound side, in the case of the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound having a carbon-carbon double bond has an isocyanate group.
- examples of the isocyanate compound having a carbon-carbon bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate and the like.
- the acrylic polymer a copolymer obtained by copolymerizing the hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like is used.
- the embedded radiation-curable pressure-sensitive adhesive can use the base polymer having a carbon-carbon double bond (particularly, an acrylic polymer) alone, but the radiation-curable pressure-sensitive adhesive can be used to the extent that the properties are not deteriorated.
- a monomer component and the radiation-curable oligomer component can also be blended.
- the radiation-curable oligomer component and the like are usually contained in the range of 30 parts by weight or less, preferably in the range of 1 to 10 parts by weight, per 100 parts by weight of the base polymer.
- a photopolymerization initiator is included in the radiation-curable adhesive when it is cured by ultraviolet light or the like.
- photopolymerization initiators include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, ⁇ -hydroxy- ⁇ , ⁇ '-dimethylacetophenone, 2-methyl-hydroxypropiophenone, ⁇ -ketol compounds such as 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl ]-Acetophenone compounds such as 2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzyl dimethyl ketal; fragrances such as 2-naphthalenesulfony
- radiation-curable adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group, which are disclosed in JP-A-60-196956.
- photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group, which are disclosed in JP-A-60-196956.
- rubber-based pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing compounds and photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt-based compounds.
- the surface of the radiation-curable adhesive layer 2 When curing is inhibited by oxygen during radiation irradiation, it is desirable to shield the surface of the radiation-curable adhesive layer 2 from oxygen (air) in some way.
- oxygen air
- examples thereof include a method of covering the surface of the pressure-sensitive adhesive layer 2 with a separator, and a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere.
- the thickness of the adhesive layer 2 is not particularly limited, it is preferably 1 to 50 ⁇ m, more preferably 2 to 30 ⁇ m, in order to achieve both chipping prevention of the cut surface of the chip and fixation and retention of the conductive sheet 3. It is more preferable to have
- the dicing die-bonding film 20 according to this embodiment is attached to a semiconductor wafer having a stepped portion such as a TAIKO (registered trademark) wafer using a film attaching device or the like.
- a film attaching device or the like An example of attaching the dicing die-bonding film 20 according to the present embodiment to a semiconductor wafer having a step portion using a film attaching apparatus will be described below with reference to FIGS. 2A to 2F.
- the film mounting device 100 is formed in a circular shape when viewed from above, and includes a housing chamber bottom wall portion 101a and a housing chamber side wall extending vertically upward from the edge of the housing chamber bottom wall portion 101a.
- the storage chamber 101 has an accommodation space S formed by the portion 101b and is open on the upper side.
- the storage chamber 101 and the lid 104 are formed in a circular shape when viewed from above, in the example shown in FIGS. It extends vertically upward around the edge, and the lid side wall portion 104b extends vertically downward around the edge of the lid bottom wall portion 104a.
- the storage chamber 101 includes storage chamber packing P1 provided on the storage chamber side wall portion 101b so as to surround the storage chamber side wall portion 101b.
- a lid packing P2 is provided so as to surround the body side wall portion 104b. Rubber packing is preferably used as the storage chamber packing P1 and the lid packing P2.
- the film attachment device 100 does not necessarily have to include both the accommodation chamber packing P1 and the lid packing P2, and may include at least one of them.
- the stage 102 includes a stage bottom wall portion 102a and a stage side wall portion 102b provided to protrude vertically upward from the edge of the stage bottom wall portion 102a. ing.
- the stage 102 is formed in a circular shape when viewed from above, in the example shown in FIGS. It is provided so as to protrude upward.
- the film mounting device 100 includes a decompression pump (not shown) for reducing the pressure in the storage space S when the storage chamber 101 is closed with the lid 104 .
- the film mounting device 100 has an open valve (not shown) for releasing the decompressed state of the storage space S. As shown in FIG.
- the method of attaching the dicing die-bonding film to the semiconductor wafer having a stepped portion includes a wafer mounting step of mounting the semiconductor wafer SW having a stepped portion on the upper surface side of the stage 102, and a step of covering a part of the open portion on the upper side. 2, a dicing die-bonding film placing step of arranging the dicing die-bonding film 20 on the upper edge of the side wall portion 101b of the accommodating chamber 101; A depressurization step of depressurizing the accommodation space S of the accommodation chamber 101 to bend a part of the dicing die bond film 20 downward, and a stage 102 is raised to dicing the semiconductor wafer SW having a stepped portion in a bent state.
- the semiconductor wafer SW having a stepped portion is mounted on the upper surface side of the stage 102 so that the side having the stepped portion SW1 faces upward.
- the semiconductor wafer SW having the stepped portion is mounted on the upper surface side of the stage 102 by mounting the stepped portion SW1 on the stage side wall portion 102b.
- the surface without the stepped portion SW1 is the surface on which the circuit is formed (that is, the circuit forming surface).
- the circuit forming surface can be prevented from directly contacting the stage bottom wall portion 102a of the stage 102, so that damage to the circuit forming surface can be suppressed.
- the dicing die-bonding film 20 is arranged on the side wall portion 101b of the storage chamber 101 so that the conductive sheet 3 side faces the semiconductor wafer SW having a stepped portion. It is placed on the storage chamber packing P1.
- the dicing die-bonding film arrangement step the dicing die-bonding film 20 is placed so as to cover the semiconductor wafer SW having the stepped portion (so that the dicing die-bonding film 20 overlaps the semiconductor wafer SW having the stepped portion). It is arranged on the storage chamber packing P1 arranged on the storage chamber side wall portion 101b in the storage chamber 101 .
- the film unwound from the rolled state is placed on the housing chamber packing P1.
- illustration of how the dicing die-bonding film 20 is unrolled from a wound state is omitted.
- the storage chamber 101 is closed and hermetically sealed by bringing the lid 104 into contact with the base layer 1 side of the dicing die-bonding film 20 from above. More specifically, in the sealing step, as shown in FIG. 2C, the lid packing P2 arranged on the lid side wall portion 104b of the lid 104 is brought into contact with the base layer 1 side of the dicing die-bonding film 20. The containment chamber 101 is closed and sealed.
- the decompression pump (not shown) is used to decompress the accommodation space S of the accommodation chamber 101 to bend a portion of the dicing die-bonding film 20 downward.
- the pressure in the accommodation space S is reduced below the pressure in the space S′ formed between the dicing die-bonding film 20 and the lid body 104, thereby reducing the pressure between the space S′ and the accommodation space S.
- a differential pressure is generated, and the dicing die-bonding film 20 is bent downward as if pulled into the accommodation space S by the differential pressure.
- the stage 102 is raised by the lifting device 103 to bring the semiconductor wafer SW having a step portion into contact with the dicing die-bonding film 20 in a bent state.
- the dicing die-bonding film 20 is in a partially bent state.
- the dicing die-bonding film 20 is in contact with the stepped portion SW1 of the semiconductor wafer SW having the stepped portion, the dicing die-bonding film 20 does not sufficiently follow the stepped portion SW1, and the end edge of the stepped portion SW1 is not in contact with the stepped portion SW1. Therefore, a relatively large gap (a gap formed from the edge of the stepped portion SW1 to the inner side exceeding 500 ⁇ m) is generated toward the center of the semiconductor wafer SW having the stepped portion.
- a release valve (not shown) is opened to release the decompressed state of the accommodation space S of the accommodation chamber 101, thereby removing the semiconductor wafer SW having a stepped portion.
- the dicing die-bonding film 20 in contact with the stepped portion SW1 is further deformed so that the dicing die-bonding film 20 follows the stepped portion SW1.
- the conductive sheet 3 has a viscosity of 10 kPa s or more and 10000 kPa s or less at 70°C, and an elongation at break of 110% at 70°C.
- the dicing die-bonding film adhesion step may be performed under atmospheric pressure by releasing the reduced pressure state, or may be performed under pressurized conditions.
- the film mounting device 100 is provided with a pressure mechanism, and the dicing die-bonding film adhesion step is performed by applying pressure with the pressure mechanism.
- the semiconductor wafer SW having a stepped portion and the dicing die-bonding film 20 in contact with the stepped portion SW1 are taken out from the film mounting device 100 and placed in a pressure device separate from the film mounting device 100.
- the dicing die-bonding film adhesion step may be performed by applying pressure in the pressure device.
- the pressure conditions include pressure conditions of 0.2 MPa to 0.7 MPa for 10 seconds to 3 minutes.
- the pressurization may be performed under heated conditions. Heating conditions include heating at a temperature of 40° C. or higher and 90° C. or lower.
- the semiconductor wafer SW having a stepped portion is cut at a position inside the stepped portion SW1, and the dicing die-bonding film 20 is attached to form a flat semiconductor wafer (hereinafter referred to as a flat-shaped semiconductor wafer). (referred to as a semiconductor wafer with a dicing die-bonding film).
- the flat semiconductor wafer with dicing die-bonding film is cut into a plurality of semiconductor chips (hereinafter referred to as semiconductor chips with dicing die-bonding film) to which the dicing die-bonding film 20 is attached by blade dicing or the like.
- the conductive sheet 3 is separated from the adhesive layer 2 to obtain a semiconductor chip with the conductive sheet 3 attached (hereinafter referred to as a semiconductor chip with a conductive sheet).
- a semiconductor chip with a conductive sheet thus obtained is attached to an adherend such as a metal lead frame and used as a component of a semiconductor device.
- the conductive sheet according to the present embodiment is suitable for use by being attached to the surface of a semiconductor wafer having a stepped portion such as a TAIKO (registered trademark) wafer on which the stepped portion is formed. It is particularly suitable for use by being attached to the surface of a semiconductor wafer having a plurality of steps on the side where the steps are formed.
- the conductive sheet according to the present embodiment is suitable for use for attaching a power semiconductor chip to a substrate in a power semiconductor device.
- the conductive sheet and dicing die-bonding film according to this embodiment are configured as described above, and thus have the following advantages.
- a conductive sheet containing a binder resin and conductive particles, Viscosity at 70 ° C. is 10 kPa s or more and 10000 kPa s or less, A conductive sheet having an elongation at break of 110% or more at 70°C.
- the conductive sheet can sufficiently follow the stepped portion when attached to the semiconductor wafer having the stepped portion.
- the conductive sheet when attached to a semiconductor wafer having a stepped portion, can sufficiently conform to the stepped portion and exhibits sufficient conductivity.
- the conductive particles include at least one selected from the group consisting of silver particles, copper particles, silver oxide particles, and copper oxide particles.
- the conductive sheet can sufficiently conform to the stepped portion when attached to the semiconductor wafer having the stepped portion, and in addition, exhibits sufficient electrical conductivity and thermal conductivity. .
- the conductive sheet can be thermally cured, so that the adhesiveness to the adherend (for example, metal lead frame, etc.) can be enhanced.
- adherend for example, metal lead frame, etc.
- the volatilization Components can be volatilized relatively well.
- the volume of the conductive sheet can be reduced relatively sufficiently. Since the conductive particles have a close positional relationship in the conductive sheet by the amount of the reduction in the volume of the conductive sheet, the conductive particles in the conductive sheet provide a heat conduction path. becomes easier to form. Thereby, the thermal conductivity of the conductive sheet can be made relatively high.
- a dicing tape having an adhesive layer laminated on a base material layer; A conductive sheet laminated on the adhesive layer of the dicing tape, A dicing die-bonding film, wherein the conductive sheet is the conductive sheet according to any one of (1) to (5) above.
- the dicing die-bonding film can sufficiently conform to the stepped portion when attached to the semiconductor wafer having the stepped portion via the conductive sheet.
- the conductive sheet and dicing die-bonding film according to the present invention are not limited to the above embodiments. Moreover, the conductive sheet and the dicing die-bonding film according to the present invention are not limited by the effects described above. Various modifications can be made to the conductive sheet and the dicing die-bonding film according to the present invention without departing from the gist of the present invention.
- Example 1 Using a hybrid mixer (manufactured by Keyence Corporation, trade name: HM-500), a mixture containing each material at the mass ratio shown in Example 1 in Table 1 below is stirred and mixed for 3 minutes to form a varnish. prepared. After applying this varnish to one side of a release treatment film (manufactured by Mitsubishi Chemical Corporation, trade name: MRA38, thickness 38 ⁇ m), it is dried at a temperature of 100° C. for 2 minutes to obtain a conductive sheet with a thickness of 30 ⁇ m. rice field.
- a release treatment film manufactured by Mitsubishi Chemical Corporation, trade name: MRA38, thickness 38 ⁇ m
- thermoplastic resin acrylic resin
- thermosetting resin epoxy resin (solid and liquid) and phenol resin
- volatile material to 100 parts by mass of the thermosetting resin
- Table 2 The mass ratio (parts by mass) of isobornylcyclohexanol (MTPH)) and the mass ratio (parts by mass) of the conductive particles to 100 parts by mass of the thermosetting resin are shown in Table 2 below.
- Table 3 shows the mass ratio of the silver-coated copper particles and silver particles to 100 parts by mass of the conductive particles (silver-coated copper particles and silver particles).
- Example 2 The liquid epoxy resin is YL980 manufactured by Mitsubishi Chemical Corporation, the silver particles are silver particles surface-treated with a fatty acid-based coating agent (fatty acid-treated silver particles, the particle shape is spherical, hereinafter referred to as fatty acid-treated silver particles), and the silver-coated copper
- the particles are spherical copper particles coated with a silver layer of 20% by mass (the particle shape is spherical; hereinafter referred to as 20% coated silver-coated copper particles), and are shown in the section of Example 2 in Table 1 below.
- a conductive sheet according to Example 2 was obtained in the same manner as in Example 1, except that a mixture containing each material in the same mass ratio was obtained.
- Example 3 The liquid epoxy resin is YL980 manufactured by Mitsubishi Chemical Corporation, the silver particles are fatty acid-treated silver particles, and the silver-coated copper particles are 20% coated silver-coated copper particles.
- a conductive sheet according to Example 3 was obtained in the same manner as in Example 1, except that a mixture containing each material in the same mass ratio was obtained.
- Example 4 The liquid epoxy resin is YL980 manufactured by Mitsubishi Chemical Corporation, and the silver particles are silver particles surface-treated with an epoxy-based coating agent (epoxy-treated silver particles. The particle shape is spherical. Hereinafter referred to as epoxy-treated silver particles).
- a conductive sheet according to Example 4 was obtained in the same manner as in Example 1, except that a mixture containing each material in the mass ratio shown in the section of Example 4 in Table 1 below was obtained.
- Comparative Example 1 The liquid epoxy resin is YL980 manufactured by Mitsubishi Chemical Corporation, the silver particles are fatty acid-treated silver particles, and the silver-coated copper particles are 20% coated silver-coated copper particles.
- a conductive sheet according to Comparative Example 1 was obtained in the same manner as in Example 1, except that a mixture containing each material in the same mass ratio was obtained.
- the conductive sheet according to each example was thermally cured at 200° C. for 1 hour while applying a pressure of 0.5 MPa in a pressure cooker.
- the thermal conductivity of the heat-cured conductive sheet according to each example was calculated by the following formula.
- the thermal diffusivity ⁇ (m 2 /s) was measured by the TWA method (temperature wave thermal analysis method, measuring device: iphase mobile, manufactured by iphase).
- the specific heat C p (J/g ⁇ °C) was measured by the DSC method. Specific heat measurement is performed using a DSC6220 manufactured by SII Nanotechnology Co., Ltd. under the conditions of a temperature increase rate of 10 ° C./min and a temperature range of 20 to 300 ° C. Based on the obtained data, the JIS handbook (specific heat capacity measurement method K-7123) was used to calculate the specific heat.
- the specific gravity was measured by the Archimedes method. Table 3 below shows the results of calculating the thermal conductivity of the conductive sheet after thermosetting according to each example.
- ⁇ Viscosity ⁇ at 70°C> The viscosity ⁇ at 70° C. of the conductive sheet according to each example was measured using a rheometer (rotary rheometer HAAKE MARS manufactured by Thermo Fisher Scientific). Specifically, when the gap value is 250 ⁇ m, the frequency is 1 Hz, and the strain amount is 0.1%, the temperature is increased from 30° C. to 180° C. at a temperature increase rate of 10° C./min. It was measured by reading the indicated value at 70°C. The results are shown in Table 3 below.
- ⁇ Elongation at break Bpe at 70°C> For the conductive sheet according to each example, the elongation at break Bpe at 70° C. was measured using a tensile tester (model "AGS-X” manufactured by Shimadzu Corporation). Specifically, it was measured as follows. (1) Prepare a conductive sheet with a width of 10 mm, a length of 30 mm, and a thickness of 200 ⁇ m. (2) A test piece is obtained by attaching a polyimide tape to both ends of the conductive sheet in the length direction. Specifically, for the conductive sheet, a polyimide tape is attached to an area up to 10 mm along the length direction from the upper edge in the length direction, and 10 mm along the length direction from the lower edge in the length direction.
- a test piece is obtained by pasting a polyimide tape on the area up to .
- (3) The upper end in the longitudinal direction of the test piece is attached to one chuck of the tensile tester, and the lower end in the longitudinal direction of the test piece is attached to the other chuck of the tensile tester.
- a second bare chip having a planar dimension of 9 mm ⁇ 9 mm and a thickness of 300 ⁇ m was attached to the exposed surface of the first bare chip. to obtain a bare chip laminate.
- the second bare chip is fixed to the exposed surface of the first bare chip so that the central portion of the second bare chip is aligned with the central portion of the first bare chip.
- one set of bare chip laminates is formed on a slide glass.
- a specimen is obtained by fixing the bare chip laminate together with a wafer ring onto an adhesive layer of a dicing tape (manufactured by Nitto Denko, trade name: "ELP V-12SR").
- the bare chip laminate is fixed on the slide glass side to the adhesive layer of the dicing tape.
- the specimen is placed on a stage arranged in a housing chamber of a vacuum wafer mounter so that the dicing tape side faces downward. The stage is heated to 70°C.
- a dicing die-bonding film is placed on the upper edge of the side wall of the housing chamber so as to cover the bare chip stack in the specimen and to face the bare chip stack with the conductive sheet side.
- the dicing die-bonding film was obtained by laminating the conductive sheet according to each example onto the adhesive layer of a dicing tape (manufactured by Nitto Denko Co., Ltd., trade name "ELP V-12SR") as a die-bonding film. .
- a dicing tape manufactured by Nitto Denko Co., Ltd., trade name "ELP V-12SR"
- ELP V-12SR trade name "ELP V-12SR”
- the value of the viscosity ⁇ at 70 ° C. is in the range of 10 kPa s or more and 10000 kPa s or less, and the value of the elongation at break Bpe at 70 ° C. It is 110% or more, and the evaluation of followability to the step portion is excellent in all cases, and it can be seen that the followability is sufficiently achieved.
- the value of the viscosity ⁇ at 70 ° C. exceeds 10000 kPa s, and the value of the elongation at break Bpe at 70 ° C. is less than 110%. It can be seen that the evaluation of the followability to .
- the conductive sheet contains a binder resin and conductive particles, and furthermore, the viscosity ⁇ at 70 ° C. is 10 kPa s or more and 10000 kPa s or less, and the breaking point at 70 ° C. It is understood that by setting the elongation to 110% or more, the conductive sheet can sufficiently follow the stepped portion in the semiconductor wafer having the stepped portion.
- the conductive sheet according to each example has a sufficient value of thermal conductivity after heat curing exceeding 1 W / m K, and the conductive sheet according to Examples 2 to 5 , the thermal conductivity after thermosetting is more than 5 W/m K, which is a sufficient value. ⁇ It can be seen that the value is more sufficient than that of K.
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Abstract
Description
また、下記特許文献1には、前記導電性シートの一方面に半導体素子(半導体チップ)を取り付けた上で、前記導電性シートの他方面を金属リードフレーム等の被着体に当接させた後に、前記導電性シートを、所定温度(例えば、200℃)で熱硬化させて金属リードフレーム等の被着体に接着させて用いることが開示されている。
これを実現するためには、半導体素子(半導体チップ)の厚みを薄くする必要がある。
そして、半導体素子(半導体チップ)は、ブレードダイシングなどにより半導体ウェハをダイシングすることにより得られることから、半導体素子(半導体チップ)の厚みを薄くするためには、半導体ウェハの厚みを薄くする必要がある。
しかしながら、半導体チップの厚みを薄くすればするほど、半導体ウェハに反りが生じ易くなる。
このように、半導体ウェハに反りが生じると、ブレードダイシングなどによる半導体ウェハのダイシングを精度良く実施できなくなるという問題がある。
上記のごとき半導体ウェハは、リング状の部分を備えているので、該リング状の部分よりも内側部分を薄く研削したとしても、該半導体ウェハに反りが生じることを抑制することができる。
なお、TAIKO(登録商標)ウェハは、前記リング状の部分とそれよりも内側の部分との間に段差部が形成されており、該段差部の最大高さは、通常、450μm程度となっており、機械研削して得られた平板部分の厚さは、通常、20μm程度となっている。
すなわち、このような半導体ウェハは、段差部を有する半導体ウェハとなっている。
そのため、半導体素子(半導体チップ)を得るに際して、上記のごとき段差部を有する半導体ウェハに前記導電性シートを取り付けようとすると、前記導電性シートが十分に段差部に追従できないことがある。
このような場合、前記段差部を有する半導体ウェハと前記導電性シートとの間において、段差部の端縁から前記段差部を有する半導体ウェハの中心に向かって比較的大きな空隙(段差の端縁から500μmを超える内側にまでに形成される空隙)が生じてしまうことがある。
このように、前記段差部を有する半導体ウェハと前記導電性シートとの間において比較的大きな空隙が生じると、その空隙を起点として、ダイシング時などに前記導電性シートが前記段差部を有する半導体ウェハから剥離し易くなる。
また、ダイシング後において、半導体素子(半導体チップ)と前記導電性シートとの間に空隙が生じている場合には、このような導電性シート付の半導体素子(半導体チップ)は、十分な特性を示すことができない。
そのため、前記段差部を有する半導体ウェハと前記導電性シートとの間において比較的大きな空隙が生じると、ダイシング後に得られる導電性シート付の半導体素子(半導体チップ)を半導体装置の部品として利用できる割合が低下してしまうという問題、すなわち、歩留まりが低下してしまうという問題もある。
しかしながら、段差部を有する半導体ウェハに取り付けるに際して、十分に段差部に追従させることができる導電性シートについて、未だ十分な検討がなされているとは言い難い。
バインダ樹脂及び導電性粒子を含む導電性シートであって、
70℃における粘度が10kPa・s以上10000kPa・s以下であり、
70℃における破断点伸びが110%以上である。
前記導電性粒子の含有割合が85質量%以上97質量%以下である、ことが好ましい。
前記導電性粒子が、銀粒子、銅粒子、酸化銀粒子、および、酸化銅粒子からなる群から選択される少なくとも1種を含む、ことが好ましい。
前記バインダ樹脂は、熱硬化性樹脂を含む、ことが好ましい。
揮発開始温度が100℃以上である揮発成分をさらに含む、ことが好ましい。
基材層上に粘着剤層が積層されたダイシングテープと、
前記ダイシングテープの前記粘着剤層上に積層された導電性シートと、を備え、
前記導電性シートが、上記のいずれかの導電性シートである。
本実施形態に係る導電性シートは、バインダ樹脂及び導電性粒子を含む。
本明細書において、導電性粒子とは、JIS K 0130(2008)にしたがって測定した電気伝導率が100μS/cm以下の粒子を意味する。
さらに、本実施形態に係る導電性シートは、70℃における破断点伸びが110%以上である。
なお、以下では、70℃における粘度にηという参照番号を付し、70℃における破断点伸びにBpeという参照番号を付すことがある。
さらに、70℃における破断点伸びが110%以上であることにより、前記導電性シートを優れた靭性を有するもの、すなわち、前記導電性シートを延性に富むものにすることができるとともに、強度に優れるものにすることができる。
上記特性を備えることにより、本実施形態に係る導電性シートは、段差部を有する半導体ウェハに取り付けるに際して、十分に段差部に追従させることができるものになる。
なお、本明細書において、十分に段差部に追従させることができるとは、段差部の端縁から段差部を有する半導体ウェハの中心に向かって生じる空隙が、500μm以下であることを意味する。
このようなペースト状の導電性組成物は変形性に富むため、該ペースト状の導電性組成物は、段差部を有する半導体ウェハの段差部に十分に追従できるものの、段差部を有する半導体ウェハに均一な厚さで取り付けることが難しくなる。
また、前記導電性シートがペースト状の導電性組成物となっていると、ダイシングダイボンドフィルムとした状態では、段差部を有する半導体ウェハに前記導電性シートを転写し難くなる。
さらに、段差部を有する半導体ウェハは、前記導電性シートを取り付けた後に段差部の内側でカットされて平板状の半導体ウェハとされた後、該平板状の半導体ウェハにダイシングが施されて複数の半導体チップへと割断される。
そして、該半導体チップは、金属リードフレーム等の被着体に取り付けられることにより、半導体装置の部品として使用される。
しかしながら、上記のように、前記導電性シートがペースト状の導電性組成物となっている場合には、ダイシングを精度よく実施することができなくなることに加えて、半導体チップとされて金属リードフレーム等に取り付けられた状態において、該半導体チップの端縁からペースト状の導電性組成物が這い上がってしまうようになる。
このように、ペースト状の導電性組成物の這い上がりが生じると、半導体装置の部品として用いた場合に、短絡を招来するので好ましくない。
本実施形態に係る導電性シートは、熱硬化性樹脂を含んでいることが好ましい。
熱硬化性樹脂を含んでいることにより、前記導電性シートを熱硬化させることができるので、被着体(例えば、金属リードフレーム等)との接着性を高めることができる。
本実施形態に係る導電性シートは、熱硬化性樹脂に加えて熱可塑性樹脂を含んでいることがより好ましい。
熱硬化性樹脂に加えて熱可塑性樹脂を含んでいることにより、前記導電性シートを熱硬化させた後においても、前記導電性シートを比較的低弾性を有するものとすることができる。
また、熱可塑性樹脂を含んでいることにより、前記導電性シートについて、70℃における粘度ηを10kPa・s以上10000kPa・s以下に比較的容易に調整することができる。
ビスフェノールA型エポキシ樹脂としては、脂肪族変性ビスフェノールA型エポキシ樹脂が挙げられる。
熱硬化性官能基を有する熱可塑性樹脂においては、熱硬化性官能基の種類に応じて、硬化剤が選ばれる。
上記アクリル樹脂は、カルボキシル基含有アクリル重合体であることが好ましい。
本実施形態に係る導電性シートが、前記バインダ樹脂として、前記熱硬化性樹脂及び前記熱可塑性樹脂を含んでいる場合には、前記導電性シートの100質量%に占める前記熱硬化性樹脂の質量%は、1質量%以上30質量%以下であることが好ましく、2質量%以上18質量%以下であることがより好ましい。
また、前記導電性シートの100質量%に占める前記熱可塑性樹脂の質量%は、0.5質量%以上10質量%以下であることが好ましく、1質量%以上7質量%以下であることがより好ましい。
さらに、前記バインダ樹脂が前記熱硬化性樹脂及び前記熱可塑性樹脂で構成されている場合、前記バインダ樹脂の100質量%に占める前記熱硬化性樹脂の質量割合は、30質量%以上90質量%以下であることが好ましく、40質量%以上70質量%以下であることがより好ましい。
本実施形態に係る導電性シートは、上記のごとき導電性粒子の中でも、銀粒子、銅粒子、酸化銀粒子、および、酸化銅粒子からなる群から選択される少なくとも1種を含んでいることが好ましい。
前記導電性粒子として上記のごときものを含むことにより、前記導電性シートは、十分な導電性および熱伝導性を示すものとなる。
球状のものを用いることにより、前記導電性シート中において、これらの粒子の分散性を高めることができる。
また、本実施形態に係る導電性シートは、これらの粒子の中でも、銀粒子を含んでいることが特に好ましい。
なお、以下では、脂肪酸系やアミン系、エポキシ系などの被覆剤で表面処理された銀粒子のことを被覆剤処理銀粒子と称することがある。
本実施形態に係る導電性シートでは、前記銀粒子として、被覆剤処理銀粒子を用いることが好ましい。前記銀粒子として被覆剤処理銀粒子を用いることにより、前記導電性シートに含まれるバインダ樹脂(熱硬化性樹脂や熱可塑性樹脂等)との親和性を高めることができるので、前記銀粒子は、前記導電性シート中に分散され易くなる。
金属被覆樹脂粒子としては、例えば、樹脂粒子を核とし、その核の表面を、ニッケルや金等の金属で被覆した粒子を用いることができる。
メッキ金属粒子や金属被覆樹脂粒子の形状としては、例えば、フレーク状、針状、フィラメント状、球状、扁平状(鱗片状を含む)のものを用いることができるが、これらの中でも、球状のものを用いることが好ましい。
メッキ金属粒子や金属被覆樹脂粒子の形状として、球状のものを用いることにより、導電性シート中において、メッキ金属粒子や金属被覆樹脂粒子の分散性を高めることができる。
銀被覆銅粒子としては、扁平状銅粒子に10質量%の銀層をコートしたものや、球状の銅粒子に20質量%の銀層をコートしたものなどが挙げられる。
このような場合、前記導電性粒子の100質量部に占める前記銀粒子の質量部は、10質量部以上95質量部以下であることが好ましく、20質量部以上90質量部以下であることがより好ましい。
また、70℃における粘度ηは、7000kPa・s以下であることが好ましく、5000kPa・s以下であることがより好ましく、3500kPa・s以下であることがさらに好ましい。
70℃における粘度ηが上記のごとき数値範囲であることにより、前記導電性シートのシート形状をより一層十分に維持することができることに加えて、前記導電性シートをより一層適度な硬さを有するものとすることができる。
具体的には、Gap値として250μm、周波数として1Hz、歪み量として0.1%を採用した上で、昇温速度10℃/minにて、30℃から180℃まで昇温させたときに、70℃の指示値を読み取ることにより得ることができる。
70℃における破断点伸びBpeが上記のごとき数値範囲であることにより、前記導電性シートをより一層靭性に優れるものとすることができる。
すなわち、前記導電性シートをより一層延性に富むものにすることができるとともに、より一層強度に優れるものにすることができる。
なお、70℃における破断点伸びBpeの上限は、通常、200%である。
具体的には、以下のようにして評価することができる。
(1)幅10mm、長さ30mm、および、厚さ200μmの導電性シートを準備する。
(2)前記導電性シートの長さ方向の両端側にポリイミドテープを貼り付けて試験体を得る。具体的には、前記導電性シートについて、長さ方向の上端縁から長さ方向に沿って10mmまでの領域にポリイミドテープを貼り付けるとともに、長さ方向の下端縁から長さ方向に沿って10mmまでの領域にポリイミドテープを貼り付けて試験体を得る。
(3)前記試験体の長さ方向の上端側を前記引張試験機の一方のチャックに取り付け、前記試験体の長さ方向の下端側を前記引張試験機の他方のチャックに取り付ける。
(4)前記試験体を取り付けた前記引張試験機を恒温槽内に載置した後、恒温槽内の温度を70℃まで上昇させる。
(5)恒温槽内の温度が70℃に達してから3min経過後に、チャック間距離10mm、引張速度50mm/minの条件にて、前記試験片を長さ方向に引っ張り、引張試験時に得られたデータを、ストローク(単位はmm)を横軸とし、試験力(引張強さ。単位はN)を縦軸としたグラフ上にプロットする。
(6)前記グラフにおいて、前記試験力が最大となるときを前記導電性シートに破断が生じたときとみなして、前記試験力が最大となるときのストローク値を読み取り、該ストローク値を前記導電性シートの有効長さ(10mm。ポリイミドテープが貼り付けられていない部分の長さ)で除した後、100を乗ずることにより、70℃における破断点伸びを算出する。
例えば、70℃における粘度ηについては、前記導電性シート中において、前記導電性粒子の含有比率を上げることに高い値となるように調整したり、前記導電性粒子の含有比率を下げることにより低い値となるように調整したりすることができる。
また、70℃における破断点伸びについては、前記導電性シート中において、前記導電性粒子の含有比率を下げることにより高い値となるように調整したり、前記導電性粒子の含有比率を上げることにより低い値となるように調整したりすることができる。
さらに、本実施形態に係る導電性シートが、前記マトリックス樹脂として、熱硬化性樹脂及び熱可塑性樹脂を含んでいる場合には、前記熱硬化性樹脂の含有比率と前記熱可塑性樹脂の含有比率とを適宜調整することにより、70℃における粘度ηおよび70℃における破断点伸びBpeを適宜調整して得ることができる。
前記揮発成分は、200℃以上で揮発する成分であることがより好ましく、250℃以上で揮発する成分であることがより好ましい。
このような揮発成分としては、水酸基を1個以上含み、かつ、揮発開始温度が100℃以上である有機化合物を挙げることができる。該有機化合物の沸点は、200℃以上であることが好ましく、250℃以上であることがより好ましい。また、前記有機化合物の沸点は、350℃以下であることが好ましい。このような有機化合物としては、テルペン化合物が挙げられる。揮発成分としては、テルペン化合物の中でも、下記式(1)で表されるイソボルニルシクロヘキサノールが好ましい。なお、イソボルニルシクロヘキサノールは、沸点が308~318℃の有機化合物であり、200mL/minの窒素ガス気流下で、10℃/minの昇温条件にて、室温(23±2℃)から600℃まで昇温したときに、100℃以上から大きく質量減少し(揮発が開始し)、245℃で揮発が完了する(それ以上の質量減少が認められなくなる)という性質を有するとともに、25℃において1000000mPa・sもの極めて高い粘度を示すものの、60℃において1000mPa・s以下という比較的低い粘度を示すという性質を有する。なお、質量減少は、測定開始温度(室温)における質量減少率を0%とした場合の値である。
このように、イソボルニルシクロヘキサノールは、25℃において上記のごとく極めて高い粘度を示すため、室温においてシート形状を維持することができるものの、60℃では上記のごとく比較的低い粘度を示すようになるので、タック性を有するようになる。すなわち、イソボルニルシクロヘキサノールを含む導電性シートは、室温においてはシート形状の維持性に優れ、60℃以上の温度においてはタック性を有するものとなる。
そのため、導電性シートの一方面に貼付された半導体素子を金属リードフレーム等にマウントする際には、通常、60~80℃の温度で、導電性シートを介して半導体素子を金属リードフレーム等の被着体に仮着(仮固定)させるが、イソボルニルシクロヘキサノールは上記のごとく60℃以上においてタック性を有するようになるので、本実施形態に係る導電性シートが揮発成分としてイソボルニルシクロヘキサノールを含む場合、導電性シートは、金属リードフレーム等の被着体への仮着性がより向上されたものとなる。すなわち、仮着した状態において、半導体素子の取り付け位置がずれたり、被着体からの導電性シートの浮き上がりが抑制されるようになる。
また、導電性シートが熱硬化性樹脂を含んでおり、該導電性シートを熱硬化させて半導体素子を被着体に接着させる場合には、信頼性高く接着を行うことができる。
また、本実施形態に係る導電性シートは、前記バインダ樹脂の100質量部に対して、前記揮発成分を200質量部以下含んでいることが好ましく、150質量部以下含んでいることがより好ましく、100質量部以下含んでいることがさらに好ましい。
このように、前記導電性シートの体積が低減されると、体積が低減された分だけ、前記導電性粒子どうしは、前記導電性シート中において近い位置関係となるため、前記導電性粒子どうしによって熱伝導パスを形成し易くなる。
これにより、前記導電性シートの熱伝導性を比較的高くすることができる。
しかしながら、本実施形態に係る導電性シートが、上記のように、揮発開始温度が100℃以上である揮発成分を含んでいる場合には、前記導電性シートを150~200℃の温度で加熱して熱硬化などをさせるときに、前記揮発成分を比較的十分に揮発させることができる。
これにより、前記導電性シートの体積を比較的十分に低減させること、換言すれば、前記導電性シートを比較的十分に体積収縮させることができるので、銀被覆銅粒子と銀粒子とを近い位置関係にすることができる。
そのため、銀被覆銅粒子として球状粒子を用いた場合であっても、銀被覆銅粒子と銀粒子との接触面積を十分に確保することができ、これにより、電気伝導性及び熱伝導性を十分に確保することができる。
導電性シートの厚さが150μm以下であることにより、熱伝導性をより向上させることができる。
導電性シートの厚さは、例えば、ダイアルゲージ(PEACOCK社製、型式R-205)を用いて、ランダムに選んだ任意の5点の厚さを測定し、これらの厚さを算術平均することにより求めることができる。
熱硬化後の熱伝導率が上記数値範囲を満たすことにより、前記導電性シートの導電性をより一層高くすることができる。
なお、本実施形態に係る導電性シートでは、熱硬化後の熱伝導率の上限値は、最大で、420W/m・Kである。
本実施形態に係る導電性シートでは、熱硬化後の熱伝導率の上限値は、200W/m・Kであってもよい。
熱硬化後における熱伝導率は、本実施形態に係る導電性シートを、プレッシャークッカー装置にて、0.5MPaの圧力をかけながら、200℃で1時間処理して熱硬化させ、熱硬化させた導電性シートについて、下記式により算出することができる。
また、上記式における、比熱(J/g・℃)は、DSC法により測定することができる。比熱測定は、エスアイアイナノテクノロジー社製のDSC6220を用い、昇温速度10℃/min、温度範囲20~300℃の条件で行い、得られたデータを基に、JISハンドブック(比熱容量測定方法K-7123)に記載された方法で、比熱を算出することができる。
さらに、上記式における、比重は、アルキメデス法により測定することができる。
換言すれば、本実施形態に係る導電性シートは、表面の少なくとも一部が当該導電性シートの接着される接着領域となっている被着体への接着に用いられ得る。
本実施形態に係る導電性シートは、前記接着領域に凹凸が形成されているような場合でも、この凹凸部分に対して良好な追従性を発揮する。
本実施形態に係る導電性シートは、片面側に円形凹部と、該円形凹部を取り囲む環状凸部が設けられた半導体ウェハの前記円形凹部と前記環状凸部との両方に接着される接着面を備えていることにより、その効果が顕著に発揮され得る。
半導体ウェハでの前記環状凸部は、前記円形凹部の表面から突出した状態で形成されるため、両者の境界には段差部が形成されることになるものの、本実施形態に係る導電性シートは、そのような段差部が形成されている箇所にも良好な追従性を発揮する。
次に、図1を参照しながら、ダイシングダイボンドフィルム20について説明する。なお、以下の説明において、導電性シートと重複する部分については、その説明は繰り返さない。
ダイシングダイボンドフィルム20では、導電性シート3上に半導体素子が貼付される。半導体素子は、ベアウェハであってもよい。
本実施形態に係るダイシングダイボンドフィルム20に貼付されたベアウェハは、ブレードダイシング、DBG(Dicing Before Grinding)、または、SDBG(Stealth Dicing Before Grinding)等により複数のベアチップへと割断される。そして、前記のごとき割断時に、ベアウェハと共に、導電性シート3も割断される。導電性シート3は、個片化された複数のベアチップのサイズに相当する大きさに割断される。これにより、複数の導電性シート3付ベアチップを得ることができる。
また、ダイシングダイボンドフィルム20の導電性シート3は、上記したように、70℃における粘度が10kPa・s以上10000kPa・s以下である。
さらに、ダイシングダイボンドフィルム20の導電性シート3は、上記したように、70℃における破断点伸びが110%以上である。
伸縮性を高める観点から、基材層1は、前記樹脂として、ポリプロピレン(PP)、ポリ塩化ビニル(PVC)、および、エチレン-酢酸ビニル共重合体(EVA)からなる群から選ばれる少なくとも1種を含むことが好ましい。
また、基材層1は、エチレン-酢酸ビニル共重合体(EVA)を含む第1樹脂層を中心層とし、該第1樹脂層の両表面に、ポリプロピレン(PP)を含む第2樹脂層、および、ポリ塩化ビニル(PVC)を含む第3樹脂層が、それぞれ積層された積層体であってもよい。
基材層1の厚さは、上記した導電性シート3の厚さと同様にダイアルゲージ(PEACOCK社製、型式R-205)を用いて求めることができる。
なお、(メタ)アクリル酸エステルとは、アクリル酸エステル及びメタクリル酸エステルの少なくとも一方を意味し、本発明の(メタ)は全て前記した内容と同様の内容を意味する。
以下、図2A~図2Fを参照しながら、フィルム貼付装置を用いて、段差部を有する半導体ウェハに、本実施形態に係るダイシングダイボンドフィルム20を取り付ける例について説明する。
また、収容室101は、収容室側壁部101b上に、収容室側壁部101bを周回するように設けられる収容室パッキンP1を備えており、蓋体104は、蓋体側壁部104b上に、蓋体側壁部104bを周回するように設けられる蓋体パッキンP2を備えている。
収容室パッキンP1および蓋体パッキンP2としては、ゴム製のパッキンを用いることが好ましい。
なお、フィルム取付装置100は、必ずしも、収容室パッキンP1および蓋体パッキンP2の両方を備えている必要はなく、少なくとも、いずれか一方を備えていればよい。
さらに、図2A~図2Eに示す例では、ステージ102は、ステージ底壁部102aと、該ステージ底壁部102aの端縁から垂直上方に突出するように設けられたステージ側壁部102bとを備えている。
上記のように、ステージ102は上面視円形状に形成されていることから、図2A~図2Eに示す例では、ステージ側壁部102bは、ステージ底壁部102aの端縁を周回するように垂直上方に突出するように設けられている。
フィルム取付装置100は、収容空間Sの減圧状態を解除するための開放弁(図示せず)を備えている。
詳しくは、ウェハ載置工程では、段差部SW1をステージ側壁部102bに載置することにより、段差部を有する半導体ウェハSWをステージ102の上面側に載置する。
ここで、段差部SW1を有さない側の面は、回路が形成される面(すなわち、回路形成面)となるものの、上記のように、段差部SW1をステージ側壁部102bに載置することにより、回路形成面がステージ102におけるステージ底壁部102aと直に接触することを防ぐことができるので、前記回路形成面が損傷することを抑制することができる。
また、ダイシングダイボンドフィルム配置工程では、ダイシングダイボンドフィルム20が段差部を有する半導体ウェハSWを覆うように(ダイシングダイボンドフィルム20と段差部を有する半導体ウェハSWとが重なるように)、ダイシングダイボンドフィルム20を収容室101における収容室側壁部101b上に配された収容室パッキンP1上に配置する。
なお、ダイシングダイボンドフィルム20は、通常、ロール状に巻き取った状態で保管されていることから、ロール状に巻き取った状態から繰り出されたものが、収容室パッキンP1上に配置されることとなるが、図2B等では、ダイシングダイボンドフィルム20がロール状に巻き取った状態から繰り出されている様子については図示を省略している。
詳しくは、密閉工程では、図2Cに示すように、蓋体104における蓋体側壁部104b上に配された蓋体パッキンP2をダイシングダイボンドフィルム20の基材層1側に当接させることにより、収容室101を閉じて密閉する。
詳しくは、前記減圧ポンプを用いて、ダイシングダイボンドフィルム20と蓋体104との間に形成される空間S’よりも収容空間Sを減圧することにより、空間S’と収容空間Sとの間で差圧を生じさせ、該差圧によってダイシングダイボンドフィルム20を収容空間Sに引っ張るようにして下方側に撓ませる。
減圧工程では、収容室101の収容空間Sを、100Pa以下となるように減圧することが好ましい。
ダイシングダイボンドフィルム接触工程では、ステージ102を0.1cm/min~10cm/minの速度で上昇させることが好ましい。
ここで、図2Eに示すように、ダイシングダイボンドフィルム20は、一部が撓んだ状態となっている。
そのため、ダイシングダイボンドフィルム20は、段差部を有する半導体ウェハSWの段差部SW1に接触した状態となっているものの、段差部SW1に十分に追従した状態となっておらず、段差部SW1の端縁から、段差部を有する半導体ウェハSWの中心に向かって比較的大きな空隙(段差部SW1の端縁から500μmを超える内側までに形成される空隙)が生じた状態となっている。
上記したように、本実施形態に係るダイシングダイボンドフィルム20では、導電性シート3は、70℃における粘度が10kPa・s以上10000kPa・s以下となっているとともに、70℃における破断点伸びが110%以上であるので、段差部SW1に十分に追従させることができる。
なお、ダイシングダイボンドフィルム密着工程は、減圧状態を開放して大気圧にて実施してもよいし、加圧条件下にて実施してもよい。
前記ダイシングダイボンドフィルム密着工程を加圧条件下にて実施する場合には、フィルム取付装置100に加圧機構を備えておき、該加圧機構で加圧することにより、前記ダイシングダイボンドフィルム密着工程を実施してもよい。
あるいは、フィルム取付装置100から段差部を有する半導体ウェハSWと、段差部SW1に接触しているダイシングダイボンドフィルム20とを取出して、これをフィルム取付装置100とは別体の加圧装置内に配した後、該加圧装置内で加圧することにより、前記ダイシングダイボンドフィルム密着工程を実施してもよい。
前記ダイシングダイボンドフィルム密着工程を加圧条件下にて実施する場合には、加圧条件としては、0.2MPa~0.7MPaの条件の圧力で10秒~3分間加圧することが挙げられる。
また、前記ダイシングダイボンドフィルム密着工程を加圧条件下にて実施する場合において、前記加圧は、加熱条件下で実施されてもよい。加熱条件としては、40℃以上90℃以下の温度で加熱することが挙げられる。
そして、平板状のダイシングダイボンドフィルム付半導体ウェハは、ブレードダイシングなどにより、ダイシングダイボンドフィルム20が取り付けられた複数の半導体チップ(以下、ダイシングダイボンドフィルム付半導体チップという)に割断される。
その後、ダイシングダイボンドフィルム付半導体チップにおいて、粘着剤層2から導電性シート3を切り離すことにより、導電性シート3が取り付けられた半導体チップ(以下、導電性シート付半導体チップという)を得る。
このようにして得られた導電性シート付半導体チップは、金属リードフレーム等に被着体に取り付けられて、半導体装置の部品として使用される。
また、本実施形態に係る導電性シートは、パワー半導体装置において、パワー半導体用チップを基板に取り付けるための使用に適している。
バインダ樹脂及び導電性粒子を含む導電性シートであって、
70℃における粘度が10kPa・s以上10000kPa・s以下であり、
70℃における破断点伸びが110%以上である
導電性シート。
前記導電性粒子の含有割合が85質量%以上97質量%以下である
上記(1)に記載の導電性シート。
前記導電性粒子が、銀粒子、銅粒子、酸化銀粒子、および、酸化銅粒子からなる群から選択される少なくとも1種を含む
上記(1)または(2)に記載の導電性シート。
前記バインダ樹脂は、熱硬化性樹脂を含む
上記(1)乃至(3)のいずれかに記載の導電性シート。
揮発開始温度が100℃以上である揮発成分をさらに含む
上記(1)乃至(4)のいずれかに記載の導電性シート。
これにより、前記導電性シートの体積を比較的十分に低減させることができる。
そして、前記導電性シートの体積が低減された分だけ、前記導電性粒子どうしは、前記導電性シート中において近い位置関係となるため、前記導電性シート中に前記導電性粒子どうしによって熱伝導パスを形成し易くなる。
これにより、前記導電性シートの熱伝導性を比較的高くすることができる。
基材層上に粘着剤層が積層されたダイシングテープと、
前記ダイシングテープの前記粘着剤層上に積層された導電性シートと、を備え、
前記導電性シートが、上記(1)乃至(5)のいずれかに記載の導電性シートである
ダイシングダイボンドフィルム。
ハイブリッドミキサー(株式会社キーエンス製、商品名:HM-500)を用いて、以下の表1の実施例1の項に示した質量割合で各材料を含む混合物を3分間撹拌混合して、ワニスを調製した。
このワニスを離型処理フィルム(三菱ケミカル株式会社製、商品名:MRA38、厚さ38μm)の一方面に塗布した後に、温度100℃で2分間乾燥させて、厚さ30μmの導電性シートを得た。
なお、以下の表1に示した各材料としては、以下のものを用いた。
・フェノール樹脂
明和化成社製のMEHC-7851S(ビフェニル型フェノール樹脂、フェノール当量209g/eq)
・固体エポキシ樹脂
新日鉄住金化学社製のKI-3000-4(クレゾールノボラック型多官能エポキシ樹脂、エポキシ当量200g/eq)
・液状エポキシ樹脂
DIC社製のEXA-4816(脂肪族変性ビスフェノールA型エポキシ樹脂(2官能)、エポキシ当量403g/eq)
・銀(Ag)被覆銅(Cu)粒子
扁平状銅粒子に10質量%の銀層をコートしたもの(平均粒子径3.5μm、不定形。以下、10%コート銀被覆銅粒子という)
・銀(Ag)粒子
凝集ナノ粒子(不定形、凝集体の平均粒子径1.8μm。以下、凝集銀粒子という)
・揮発材(イソボルニルシクロヘキサノール(MTPH))
日本テルペン化学製のMTPH
・アクリル樹脂溶液
ナガセケミテック社製のテイサンレジンSG-70L(溶剤としてMEK及びトルエンを含有、固形分12.5%、ガラス転移温度-13℃、質量平均分子量90万、酸価5mg/KOH、カルボキシル基含有アクリル共重合体)
・カップリング剤
信越化学工業社製のKBE-846(ビス(トリエトキシシリルプロピル)テトラスルフィド)
・触媒
北興化学工業社製のTPP-MK(テトラフェニルホスホニウムテトラ-p-トリルボレート)
・溶剤
メチルエチルケトン(MEK)
また、熱硬化性樹脂(エポキシ樹脂(固体及び液状)及びフェノール樹脂)の100質量部に対する熱可塑性樹脂(アクリル樹脂)の質量割合(質量部)、熱硬化性樹脂の100質量部に対する揮発材(イソボルニルシクロヘキサノール(MTPH))の質量割合(質量部)、及び、熱硬化性樹脂の100質量部に対する導電性粒子の質量割合(質量部)について、以下の表2に示した。
さらに、導電性粒子(銀被覆銅粒子及び銀粒子)の100質量部に占める銀被覆銅粒子及び銀粒子の質量割合について以下の表3に示した。
液状エポキシ樹脂を三菱ケミカル社製のYL980とし、銀粒子を脂肪酸系被覆剤で表面処理された銀粒子(脂肪酸処理銀粒子。粒子形状は球状。以下、脂肪酸処理銀粒子という)とし、銀被覆銅粒子を球状の銅粒子に銀層を20質量%コートしたもの(粒子形状は球状。以下、20%コート銀被覆銅粒子という)とした上で、以下の表1の実施例2の項に示した質量割合で各材料を含む混合物を得た以外は、実施例1と同様にして、実施例2に係る導電性シートを得た。
液状エポキシ樹脂を三菱ケミカル社製のYL980とし、銀粒子を脂肪酸処理銀粒子とし、銀被覆銅粒子を20%コート銀被覆銅粒子とした上で、以下の表1の実施例3の項に示した質量割合で各材料を含む混合物を得た以外は、実施例1と同様にして、実施例3に係る導電性シートを得た。
液状エポキシ樹脂を三菱ケミカル社製のYL980とし、銀粒子をエポキシ系被覆剤で表面処理された銀粒子(エポキシ処理銀粒子。粒子形状は球状。以下、エポキシ処理銀粒子という)とした上で、以下の表1の実施例4の項に示した質量割合で各材料を含む混合物を得た以外は、実施例1と同様にして、実施例4に係る導電性シートを得た。
液状エポキシ樹脂を三菱ケミカル社製のYL980とし、銀粒子を脂肪酸処理銀粒子とし、銀被覆銅粒子を20%コート銀被覆銅粒子とした上で、以下の表1の比較例1の項に示した質量割合で各材料を含む混合物を得た以外は、実施例1と同様にして、比較例1に係る導電性シートを得た。
各例に係る導電性シートを、プレッシャークッカー装置にて、0.5MPaの圧力をかけながら、200℃で1時間処理して熱硬化させた。熱硬化させた各例に係る導電性シートについて、下記式により熱伝導率を算出した。
比熱Cp(J/g・℃)は、DSC法により測定した。比熱測定は、エスアイアイナノテクノロジー社製のDSC6220を用い、昇温速度10℃/min、温度範囲20~300℃の条件下で行い、得られたデータを基に、JISハンドブック(比熱容量測定方法K-7123)に記載された方法で比熱を算出した。
比重は、アルキメデス法により測定した。
各例に係る熱硬化後の導電性シートについて、熱伝導率を算出した結果を以下の表3に示した。
各例に係る導電性シートについて、70℃における粘度ηをレオメータ(サーモフィッシャーサイエンティフィック社製、回転式レオメータ HAAKE MARS)を用いて測定した。
具体的には、Gap値として250μm、周波数として1Hz、歪み量として0.1%を採用した上で、昇温速度10℃/minにて、30℃から180℃まで昇温させたときに、70℃の指示値を読み取ることにより測定した。
その結果を以下の表3に示した。
各例に係る導電性シートについて、70℃における破断点伸びBpeを、引張試験機(島津製作所社製の型式「AGS-X」)を用いて測定した。
具体的には、以下のようにして測定した。
(1)幅10mm、長さ30mm、および、厚さ200μmの導電性シートを準備する。
(2)前記導電性シートの長さ方向の両端側にポリイミドテープを貼り付けて試験体を得る。具体的には、前記導電性シートについて、長さ方向の上端縁から長さ方向に沿って10mmまでの領域にポリイミドテープを貼り付けるとともに、長さ方向の下端縁から長さ方向に沿って10mmまでの領域にポリイミドテープを貼り付けて試験体を得る。
(3)前記試験体の長さ方向の上端側を前記引張試験機の一方のチャックに取り付け、前記試験体の長さ方向の下端側を前記引張試験機の他方のチャックに取り付ける。
(4)前記試験体を取り付けた前記引張試験機を恒温槽内に載置した後、恒温槽内の温度を70℃まで上昇させる。
(5)恒温槽内の温度が70℃に達してから3min経過後に、チャック間距離10mm、引張速度50mm/minの条件にて、前記試験片を長さ方向に引っ張り、引張試験時に得られたデータを、ストローク(単位はmm)を横軸とし、試験力(引張強さ。単位はN)を縦軸としたグラフ上にプロットする。
(6)前記グラフにおいて、前記試験力が最大となるときを前記導電性シートに破断が生じたときとみなして、前記試験力が最大となるときのストローク値を読み取り、該ストローク値を前記導電性シートの有効長さ(10mm。ポリイミドテープが貼り付けられていない部分の長さ)で除した後、100を乗ずることにより、70℃における破断点伸びを算出する。
その結果を以下の表3に示した。
各例に係る導電性シートについて、段差部への追従性を真空ウエハマウンター(日東精機社製、真空マウンターMSA840VIII)を用いて評価した。
具体的には、以下のようにして評価した。
(1)第1ダイボンドフィルム(日東電工社製、商品名「EM-310V」、厚さ7μm)を用いて、平面寸法10mm×10mm、厚さ100μmの第1ベアチップをスライドガラスに一方面に固定した後、第2ダイボンドフィルム(日東電工社製、商品名「EM-310V」、厚さ7μm)を用いて、平面寸法9mm×9mm、厚さ300μmの第2ベアチップを前記第1ベアチップの露出面に固定して、ベアチップ積層体を得る。
なお、前記第2ベアチップは、該第2ベアチップの中心部と前記第1ベアチップの中心部とが一致するように、前記第1ベアチップの露出面に固定する。
また、ベアチップ積層体は、スライドガラス上に1組形成する。
(2)ダイシングテープ(日東電工社製、商品名「ELP V-12SR」)の粘着剤層上に、ウェハリングとともに前記ベアチップ積層体を固定して供試体を得る。
なお、前記ベアチップ積層体は、スライドガラス側を前記ダイシングテープの粘着剤層に固定する。
(3)前記供試体を、ダイシングテープ側が下側となるように真空ウエハマウンターの収容室内に配されたステージ上に載置する。なお、前記ステージは70℃に加熱しておく。
(4)前記供試体における前記ベアチップ積層体を覆い、かつ、導電性シート側が前記ベアチップ積層体と対向するように、収容室の側壁部の上端縁にダイシングダイボンドフィルムを配置する。
なお、前記ダイシングダイボンドフィルムは、ダイボンドフィルムとしてダイシングテープ(日東電工社製、商品名「ELP V-12SR」)の粘着剤層上に各例に係る導電性シートを貼り合せて得たものである。
(5)真空ウエハマウンターの蓋体を閉じた後、前記収容室の収容空間を0MPaまで減圧する。
(6)前記収容室の収容空間の減圧状態を解除して、前記真空ウエハマウンターをオートクレーブ内に入れた後、該オートクレーブ内で、前記真空ウエハマウンターを温度70℃にて0.5MPaで1分間加圧する。
(7)前記真空ウエハマウンター内から前記ベアチップ積層体を取出し、前記ベアチップ積層体をスライドガラス側から顕微鏡観察することにより、前記第1ベアチップの端縁からどの程度の距離まで空隙が形成されているかを確認する。
段差部への追従性は、以下の基準で判断した。
優:空隙が第1ベアチップの端縁から500μm以下までの距離に形成されている。
不可:空隙が第1ベアチップの端縁から500μmを超える距離まで形成されている。
段差部への追従性を評価した結果を以下の表3に示した。
これに対し、比較例1に係る導電性シートでは、70℃における粘度ηの値が10000kPa・sを超えているとともに、70℃における破断点伸びBpeの値が110%を下回っており、段差部への追従性の評価が不可となっていて、十分に追従できていないことが分かる。
この結果から、導電性シートを、バインダ樹脂及び導電性粒子を含むものとした上で、さらに、70℃における粘度ηを10kPa・s以上10000kPa・s以下のものとするとともに、70℃における破断点伸びを110%以上のものとすることにより、該導電性シートは、段差部を有する半導体ウェハにおいて、段差部に十分に追従できるものとなることが把握される。
Claims (6)
- バインダ樹脂及び導電性粒子を含む導電性シートであって、
70℃における粘度が10kPa・s以上10000kPa・s以下であり、
70℃における破断点伸びが110%以上である
導電性シート。 - 前記導電性粒子の含有割合が85質量%以上97質量%以下である
請求項1に記載の導電性シート。 - 前記導電性粒子が、銀粒子、銅粒子、酸化銀粒子、および、酸化銅粒子からなる群から選択される少なくとも1種を含む
請求項1または2に記載の導電性シート。 - 前記バインダ樹脂は、熱硬化性樹脂を含む
請求項1乃至3のいずれか1項に記載の導電性シート。 - 揮発開始温度が100℃以上である揮発成分をさらに含む
請求項1乃至4のいずれか1項に記載の導電性シート。 - 基材層上に粘着剤層が積層されたダイシングテープと、
前記ダイシングテープの粘着剤層上に積層された導電性シートと、を備え、
前記導電性シートが、請求項1乃至5のいずれか1項に記載の導電性シートである
ダイシングダイボンドフィルム。
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-
2022
- 2022-03-08 WO PCT/JP2022/009950 patent/WO2022264546A1/ja active Application Filing
- 2022-03-08 CN CN202280035889.XA patent/CN117321744A/zh active Pending
- 2022-03-08 JP JP2023529533A patent/JPWO2022264546A1/ja active Pending
- 2022-04-12 TW TW111113808A patent/TW202300605A/zh unknown
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JP2011071492A (ja) * | 2009-08-25 | 2011-04-07 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
JP2012079936A (ja) * | 2010-10-01 | 2012-04-19 | Nitto Denko Corp | ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
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JP2015195266A (ja) * | 2014-03-31 | 2015-11-05 | 日東電工株式会社 | ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法 |
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JP2017045935A (ja) * | 2015-08-28 | 2017-03-02 | 日立化成株式会社 | 接着シートとダイシングテープを用いる半導体装置の製造方法 |
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JPWO2022264546A1 (ja) | 2022-12-22 |
TW202300605A (zh) | 2023-01-01 |
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