WO2011162036A1 - スパッタリング装置、成膜方法、および制御装置 - Google Patents
スパッタリング装置、成膜方法、および制御装置 Download PDFInfo
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- WO2011162036A1 WO2011162036A1 PCT/JP2011/060924 JP2011060924W WO2011162036A1 WO 2011162036 A1 WO2011162036 A1 WO 2011162036A1 JP 2011060924 W JP2011060924 W JP 2011060924W WO 2011162036 A1 WO2011162036 A1 WO 2011162036A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3473—Composition uniformity or desired gradient
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present invention relates to a sputtering apparatus, a film forming method, and a control apparatus for forming a thin film on a substrate having a concavo-convex structure in a manufacturing process of a semiconductor device, an electronic device, a magnetic device, a display device and the like.
- a chemical reaction on the substrate such as a chemical vapor deposition method (see Patent Document 1) or an atomic layer deposition method (see Patent Document 2) is used.
- the method used is well known. These methods are used for covering deep bottom trenches, bottom surfaces of holes, and inner wall surfaces.
- methods using these chemical reactions are not suitable for applications that require high-purity metal films because reactive gases in the process are mixed in the films.
- it takes a development time to search for a source gas that is a source of a chemical reaction at present, only a limited number of materials can be realized for a metal film. Therefore, it is not used for the purpose of forming a laminated film of various metal films and alloy films.
- an oblique incident rotation film forming method disclosed in Patent Document 7 is known as a method for uniformly forming a thin film on a flat surface.
- a cathode unit that supports a target is disposed obliquely above a substrate, and a target material is sputtered by magnetron sputtering while the substrate is rotated along its processing surface.
- a method of controlling the rotation speed of the substrate is disclosed in order to improve the deviation of the film thickness distribution that occurs when the magnetic film is formed in a magnetic field (see Patent Document 8). .
- the film thickness of the thin film deposited on the concavo-convex wall surface or the inclined surface (hereinafter referred to as a side surface) varies within the substrate surface. More specifically, the film thickness attached to the side surface facing the outside of the substrate (hereinafter also referred to as the first surface) and the center side direction of the substrate depending on the positional relationship with the target disposed obliquely above the substrate. There is a problem that a difference occurs in the film thickness of the film adhering to the side surface facing the surface (hereinafter also referred to as the second surface).
- the oblique incident rotation film formation method is an effective technique for a flat substrate having no uneven structure on the surface.
- a substrate having a concavo-convex structure such as a mesa structure, a V-groove, or a trench
- two surfaces having a concavo-convex structure particularly, a surface to be processed by sputtering (for example, concavo-convex
- the thickness of the film formed by sputtering on the two surfaces facing the longitudinal direction of the structure is different.
- FIG. 2 shows a state in which a so-called mesa structure 211 having a rectangular bottom and top surface is formed on the processing surface of the substrate 21 as an uneven structure.
- a first surface facing the outside of the substrate is denoted by reference numeral 211a
- a second surface facing the center side of the substrate is denoted by reference numeral 211b.
- 18 and 19 are diagrams showing the positional relationship between the concavo-convex structure and the target when attention is paid to a certain concavo-convex structure on the substrate.
- FIG. 19 shows a state in which the substrate is rotated 180 ° from the state of FIG. In the state of FIG.
- the surface 211a and the target 400 face each other, and a film formed by sputtering is mainly formed on the surface 211a.
- the surface 211b faces the target 400, and the film formed by sputtering is mainly formed on the surface 211b.
- the distance between the target 400 and the surface 211a in FIG. 18 is different from the distance between the target 400 and the surface 211b in FIG. The longer the distance between the target and the surface to be processed, the smaller the amount of film formation. Accordingly, in the case of FIGS. 18 and 19, the film thickness of the surface 211a is larger than that of the surface 211b.
- the film thickness varies depending on the direction of the side surface. This is true for all the concavo-convex structures other than the concavo-convex structure located in the approximate center on the substrate.
- This tendency can be said regardless of where the target is placed as long as the target is placed obliquely above the substrate (offset placement). Furthermore, it can be said that a plurality of targets are arranged obliquely above the substrate. This is because even if the target is additionally arranged at a symmetrical position with respect to the central axis of the substrate, the positional relationship between the target, the surface 211a, and the surface 211b does not change. That is, the distance when the surface 211a and the target face each other is short, and the distance when the surface 211b and the target face each other is long.
- the present invention provides a sputtering apparatus and a film forming method capable of making the film thickness attached to the side surface of the concavo-convex structure uniform even in the concavo-convex structure even on the substrate on which the concavo-convex structure is formed. And it aims at providing a control device.
- the present invention provides a substrate holder for rotatably holding a substrate, and at least one sputtering target disposed obliquely opposite the substrate holder.
- a target holder for detecting the rotational position of the substrate held on the substrate holder; and rotation control means for adjusting the rotational speed of the substrate in accordance with the rotational position detected by the position detecting means.
- the rotation control means is parallel to a side surface that is a surface to be processed of the uneven structure.
- the rotational speed of the substrate when the sputtering target to be deposited is positioned on the first direction side parallel to the in-plane direction of the substrate is the first rotation rate.
- the rotation speed of the substrate is set to be slower than the rotation speed of the substrate when the sputtering target to be deposited is positioned on a second direction side that is perpendicular to the direction and parallel to the substrate surface. It is characterized by controlling.
- the present invention also provides a substrate holder for holding the substrate in a non-continuously rotatable manner, and a target holder for supporting at least one sputtering target disposed at a position diagonally opposite the substrate holder; Position detection means for detecting the rotation position of the substrate held on the substrate holder, and rotation control means for adjusting the rotation stop time of the substrate according to the rotation position detected by the position detection means.
- the rotation control means is parallel to a side surface serving as a surface to be processed of the uneven structure and the substrate
- the rotation stop time of the substrate when the sputtering target to be deposited is located on the first direction side parallel to the in-plane direction of the first direction and the first direction.
- the rotation stop time of the substrate is set to be longer than the rotation stop time of the substrate when the sputtering target to be deposited is positioned on the second direction side that is straight and parallel to the substrate surface. It is characterized by controlling.
- the present invention provides a substrate holder for rotatably holding a substrate, a cathode unit for sputtering at least one sputtering target disposed diagonally opposite the substrate holder, and on the substrate holder
- a sputtering apparatus comprising: position detection means for detecting the rotation position of the held substrate; and power control means for adjusting power supplied to the cathode unit according to the rotation position detected by the position detection means.
- the power control means is parallel to the side surface to be processed of the uneven structure and in-plane direction of the substrate
- the power supplied to the cathode unit when the sputtering target to be deposited is located on the first direction side parallel to the
- the power supplied to the cathode unit when the sputtering target to be deposited is positioned on the second direction side that is perpendicular to the first direction and parallel to the substrate surface is larger than the power supplied to the cathode unit.
- the power supplied to the cathode unit is adjusted.
- the present invention is a film forming method by sputtering, the step of placing a substrate on which at least one concavo-convex structure is formed on a rotatable substrate holder, and the tilting of the substrate while rotating the substrate.
- the forming step includes a surface to be processed of the concavo-convex structure on the substrate
- the film deposition amount on the side surface to be processed is relative
- the side surface that becomes the surface to be processed when the sputtering target to be deposited is positioned on the second direction side that is perpendicular to the first direction and parallel to the substrate surface.
- the present invention is a film forming method by sputtering, the step of placing a substrate on which at least one concavo-convex structure is formed on a rotatable substrate holder, and the tilting of the substrate while rotating the substrate.
- the forming step detecting the rotational position of the substrate; Adjusting the rotational speed of the substrate in accordance with the detected rotational position, the adjusting step being parallel to a side surface of the concavo-convex structure on the substrate that is to be processed and the substrate
- the rotation speed of the substrate when the sputtering target to be deposited is positioned on the first direction side parallel to the in-plane direction of the substrate is perpendicular to the first direction and parallel to the substrate surface.
- the present invention is a film forming method by sputtering, the step of disposing a substrate having at least one uneven structure formed on a rotatable substrate holder, while rotating the substrate discontinuously, Sputtering a sputtering target disposed at a position opposite to the substrate to form a film on the surface to be processed of the concavo-convex structure, and the forming step detects a rotational position of the substrate. And adjusting the rotation stop time of the substrate according to the detected rotational position, and the adjusting step is parallel to a side surface of the concavo-convex structure on the substrate that is a surface to be processed.
- the rotation stop time of the substrate when the sputtering target to be deposited is located on the first direction side parallel to the in-plane direction of the substrate is perpendicular to the first direction and the The rotation stop time of the substrate is controlled to be longer than the rotation stop time of the substrate when the sputtering target to be deposited is positioned on the second direction side parallel to the plate surface.
- the present invention is also a film forming method by sputtering, in which a substrate on which at least one concavo-convex structure is formed is disposed on a rotatable substrate holder, and the cathode unit is powered while rotating the substrate.
- Forming a film on the surface to be processed of the concavo-convex structure by generating a plasma by sputtering and sputtering a sputtering target disposed at a position diagonally opposite to the substrate.
- the step includes a step of detecting a rotational position of the substrate, and a step of adjusting the electric power according to the detected rotational position, and the adjusting step includes processing the uneven structure on the substrate.
- the cathode unit when the sputtering target to be deposited is positioned on the first direction side parallel to the side surface to be a surface and parallel to the in-plane direction of the substrate. From the power supplied to the cathode unit when the sputtering target to be deposited is positioned on the second direction side which is perpendicular to the first direction and parallel to the substrate surface. The power supplied to the cathode unit is adjusted so as to be larger.
- the present invention also provides a substrate holder for rotatably holding a substrate, a target holder for supporting at least one sputtering target disposed diagonally opposite the substrate holder, and on the substrate holder.
- a control device for controlling a sputtering apparatus comprising position detection means for detecting the rotational position of the substrate held on the substrate and rotation drive means for controlling the rotation of the substrate holder, wherein the position detection means When the substrate on which at least one concavo-convex structure is formed is arranged on the substrate holder, the processing unit of the concavo-convex structure is processed according to the acquired information on the rotational position.
- the rotation speed of the substrate during placement is perpendicular to the first direction and parallel to the substrate surface, and the sputtering target to be deposited is positioned on the second direction side of the substrate. It is characterized by comprising means for generating a control signal for controlling the rotation drive means so as to be slower than the rotation speed, and means for transmitting the generated control signal to the rotation drive means.
- the present invention also provides a substrate holder for holding the substrate in a non-continuously rotatable manner, and a target holder for supporting at least one sputtering target disposed at a position diagonally opposite the substrate holder; Position detection means for detecting the rotation position of the substrate held on the substrate holder, and rotation drive means for adjusting the rotation stop time of the substrate according to the rotation position detected by the position detection means.
- a control apparatus for controlling the sputtering apparatus wherein a means for obtaining information on the rotational position from the position detection means and a substrate on which at least one concavo-convex structure is formed on the substrate holder are arranged, Depending on the acquired information on the rotational position, the surface is parallel to the side surface of the concavo-convex structure to be processed and parallel to the in-plane direction of the substrate.
- the rotation stop time of the substrate when the sputtering target to be deposited is located on a first direction side is on a second direction side that is perpendicular to the first direction and parallel to the substrate surface.
- Means for generating a control signal for controlling the rotation stop time of the substrate so as to be longer than the rotation stop time of the substrate when the sputtering target to be deposited is located; and the generated control signal Means for transmitting to the rotation drive means.
- the present invention provides a substrate holder for rotatably holding a substrate, a target holder for supporting at least one sputtering target disposed diagonally opposite the substrate holder, and on the substrate holder.
- a control device for controlling a sputtering apparatus comprising: a position detection means for detecting the rotational position of the substrate held on the substrate; and a power supply source for supplying power to the cathode unit, the sputtering apparatus
- the processing unit of the concavo-convex structure is processed according to the acquired information on the rotational position.
- the power to be supplied to the cathode unit when the ring target is positioned is positioned on the second direction side that is perpendicular to the first direction and parallel to the substrate surface, and the sputtering target to be deposited is positioned on the second direction side.
- the two concavo-convex structures facing each other in the concavo-convex structure for example, The variation in film thickness between two opposing side surfaces (slopes and wall surfaces) formed along the longitudinal direction can be reduced.
- FIG. 7B is a cross-sectional view taken along the line A-A ′ of FIG. 7A. It is a figure which shows the relationship between the rotation angle (theta) of the board
- FIG. 7B is a cross-sectional view taken along the line A-A ′ of FIG. 7A. It is a figure which shows the relationship between the rotation angle (theta) of the board
- FIG. 9B is a sectional view taken along line B-B ′ of FIG. 9A. It is explanatory drawing of the board
- FIG. 10B is a sectional view taken along line C-C ′ of FIG. 10A. It is a figure which shows the example of the cross-sectional waveform of the waveform uneven structure which concerns on one Embodiment of this invention. It is a figure which shows the example of the cross-sectional waveform of the waveform uneven structure which concerns on one Embodiment of this invention. It is a figure which shows the example of the cross-sectional waveform of the waveform uneven structure which concerns on one Embodiment of this invention.
- FIG. 1 is a schematic cross-sectional view schematically showing the sputtering apparatus of this embodiment.
- FIG. 2 is a plan view schematically showing an example of a substrate in which a concavo-convex structure is integrated on a processing surface according to this embodiment, and an enlarged view of the concavo-convex structure.
- FIG. 3 is a plan view schematically showing the positional relationship between the substrate holder and the cathode unit. 1 corresponds to the AOB cross section of FIG.
- the sputtering apparatus 1 of the present embodiment includes a vacuum chamber (hereinafter simply referred to as “chamber”) 10, and the vacuum chamber 10 is provided with an upper lid via an O-ring 15 for vacuum sealing. 14 is provided.
- the vacuum chamber 10 is provided with a vacuum pump 11 for evacuating the inside.
- the vacuum chamber 10 is connected to an adjacent vacuum transfer chamber (not shown) via a gate valve (not shown) for carrying a substrate 21 to be processed.
- a gas injection port 12 is opened in the chamber 10, and a gas introduction system 13 for introducing a reactive sputtering gas into the chamber 10 is connected to the gas injection port 12.
- a gas cylinder (not shown) is connected to the gas introduction system 13 via an automatic flow controller (not shown) such as a mass flow controller, and a reactive gas is introduced from the gas inlet 12 at a predetermined flow rate.
- the gas introduction system 13 supplies a reactive gas into the chamber 10 when performing reactive sputtering in the chamber 10.
- a substrate holder 22 capable of supporting the substrate 21 is provided on the upper surface of the lower part of the processing space in the chamber 10.
- the substrate 21 to be processed is usually carried onto the substrate holder 22 through a gate valve (not shown) by a handling robot provided in an adjacent vacuum transfer chamber (not shown).
- the substrate holder 22 is a disk-shaped mounting table (stage), and is configured to adsorb and support the substrate 21 on the upper surface thereof by electrostatic adsorption, for example.
- the substrate holder 22 is connected to a rotation driving mechanism 60 via a vacuum rotation introducing device 16 and is configured to be rotatable around its central axis while maintaining a vacuum. Therefore, the substrate holder 22 can rotate the substrate 21 adsorbed and supported on the mounting surface along the processing surface.
- a magnetic fluid is used as the vacuum rotation introducing machine 16, but is not limited thereto.
- the substrate holder 22 is provided with a position sensor 23 as position detecting means, and the rotation position of the substrate 21 can be detected.
- a rotary encoder is used as the position sensor 23.
- any configuration may be used as the position sensor 23 as long as the rotational position of the rotating substrate 21 can be detected, such as the above-described rotary encoder.
- the rotational position of the substrate 21 held by the substrate holder 22 is detected by directly detecting the rotational position of the substrate 21 or the substrate holder 22 by a sensor such as the position sensor 23. Any configuration may be used as long as the rotation position can be detected.
- the rotation position of the substrate 21 may be obtained indirectly, for example, by calculation from the rotation speed or rotation time of the substrate holder 22.
- the substrate 21 is held on the mounting surface of the substrate holder 22 in a horizontal state.
- a material of the substrate 21 for example, a disk-shaped silicon wafer is used, but is not limited thereto.
- FIG. 2 shows a processing substrate on which a large number of mesa structures 211 are formed as described above.
- Each mesa structure 211 has a longitudinal direction aligned in parallel and regularly arranged.
- the side surfaces 211a and 211b along the longitudinal direction are the surfaces to be processed for sputtering of the mesa structure 211 (desired surfaces for film formation with high uniformity). That is, the side surfaces 211a and 211b, which are two side surfaces facing each other among the plurality of side surfaces of the mesa structure 211, are processing surfaces. As can be seen from FIG.
- the side surface 211 a is the outer surface of the substrate 21 of the mesa structure 211
- the side surface 211 b is the surface of the mesa structure 211 on the center side of the substrate 21.
- the mesa structure is provided so that the notch or orientation flat 212 and the longitudinal surface of the mesa structure 211 face each other.
- a plurality of cathode units 40 are disposed obliquely above the substrate holder 22 in the processing space in the chamber 10 (at a position opposite to the substrate holder 22 diagonally).
- the cathode unit 40 is configured to be able to support a sputtering target 400 (hereinafter referred to as a target). That is, a plurality of cathode units 40 are provided for one substrate holder 22, and each cathode unit 40 is attached to the upper lid 14 in an inclined state.
- the upper lid 14 is provided with five cathode units 40 (40a to 40e), but the number of cathode units 40 is not limited to this.
- One cathode unit 40 may be provided. That is, at least one cathode unit for supporting the target may be provided in the vacuum chamber 10.
- Each cathode unit 40 is inclined with respect to the processing surface of the substrate 21 on the substrate holder 22 and is offset from the central axis of the substrate 21 at equal intervals in the surface direction.
- each cathode central axis of each cathode unit 40 is located away from the rotation axis of the substrate holder 22 and is arranged at equal intervals on a concentric circle spaced a predetermined distance from the rotation axis.
- the substrate diameter and the target diameter are not particularly limited. However, when the substrate center and the cathode center are offset and the substrate 21 is rotated as in this embodiment, even if the target diameter is smaller than the substrate diameter, the substrate diameter is uniform. Excellent film formation is possible.
- a magnetron having a plurality of permanent magnets (cathode side magnets) arranged on the back side of the cathode in each cathode unit 40 is configured to form a magnetic field on the surface side of the target.
- a plate-like target is attached to each cathode unit 40 on the cathode surface side. That is, each target is provided on the processing space side with respect to the cathode, and each target is disposed facing obliquely downward.
- the target material varies depending on the type of film formed on the substrate. In the present embodiment, since five cathode units 40 are arranged, for example, five types of targets having different material components are attached, but the present invention is not limited to this.
- Each cathode unit 40 is electrically connected to a discharge power source 70 that applies a voltage to the cathode.
- the discharge power may be any of high frequency power, DC power, and superposition of high frequency power and DC power.
- a voltage is selectively applied to the plurality of cathode units 40
- an individual discharge power source may be connected to each cathode unit 40.
- the discharge power source 70 may be configured to include a switching mechanism such as a switch that selectively supplies power as a common power source. That is, a laminated film can be formed on the substrate 21 by applying a voltage to each cathode unit 40 sequentially or alternately.
- a discharge gas introduction system 41 for supplying a discharge processing gas is connected to the vicinity of the cathode in the casing of each cathode unit 40.
- a discharge gas for example, an inert gas such as Ar or Kr is used.
- Each cathode generates a plasma discharge with the substrate holder 21 and can sputter a target attached to each cathode unit 40.
- a shutter 45 that selectively cuts off between a part of the cathodes and the substrate holder 22 is provided in front of each cathode unit 40. By selectively opening the shutter 45, a target can be selected from the plurality of cathode units 40 to perform sputtering, and contamination from other sputtered targets can be prevented. it can.
- FIG. 4 is a block diagram showing a control device in the present embodiment.
- the control device 50 of the present embodiment includes, for example, a general computer and various drivers. That is, the control device 50 includes a CPU (not shown) that executes processing operations such as various calculations, control, and determination, and a ROM that stores various control programs executed by the CPU. In addition, the control device 50 includes a RAM that temporarily stores data during the processing operation of the CPU, input data, and the like, and a nonvolatile memory such as a flash memory and an SRAM. In such a configuration, the control device 50 executes a film forming process operation in accordance with a predetermined program stored in the ROM or a command from the host device.
- the control device 50 includes a discharge power source 70, a driving unit for the shutter 45, a discharge gas introduction system 41, an inert gas introduction system 13, an exhaust pump 11, and a rotation drive mechanism 60 for the substrate holder 22. Outputs a command. Various process conditions such as discharge time, discharge power, target selection, process pressure, and rotation of the substrate holder 22 are controlled according to the command. In addition, output values of sensors such as a pressure gauge for measuring the pressure in the chamber 10 and a position sensor 23 as a position detecting means for detecting the rotational position of the substrate can be acquired, and control according to the state of the apparatus is also possible. It is.
- control device 50 includes a holder rotation control unit 51 as rotation control means for adjusting the rotation speed of the substrate 21 according to the rotation position detected by the position sensor 23.
- the holder rotation control unit 51 includes a target speed calculation unit 51a and a drive signal generation unit 51b, and depends on the rotation position of the substrate based on the positional relationship between the rotation position of the substrate 21 and the cathode unit 40 during discharge. The function of controlling the rotation speed of the substrate 21 by controlling the rotation of the rotating portion of the substrate holder 22.
- the control device 50 is configured to receive information regarding the rotational position of the substrate 21 from the position sensor 23.
- the target speed calculation unit 51a determines the position based on the current rotational position value of the substrate 21 output from the position sensor 23 that detects the rotational position of the substrate 21.
- the target rotational speed at is calculated.
- the value of the target rotation speed can be calculated, for example, by holding a correspondence relationship between the rotation position of the substrate 21 and the target rotation speed as a map in advance.
- the drive signal generation unit 51 b generates a drive signal for setting the target rotation speed based on the target rotation speed calculated by the target speed calculation unit 51 a and outputs the drive signal to the rotation drive mechanism 60.
- the control device 50 is configured to transmit the drive signal generated by the drive signal generation unit 51b to the rotation drive mechanism 60.
- the rotation driving mechanism 60 includes a holder rotation driving unit 61 such as a motor that drives the substrate holder 22, a target value, and an actual value (rotation position or rotation speed) output from the position sensor 23. And a feedback control unit 62 that determines an operation value of the holder rotation driving unit 61 based on the deviation of, and drives the substrate holder 22 by a servo mechanism.
- a feedback control is not an essential component of the present invention, and the motor may be either a DC motor or an AC motor.
- the rotation drive mechanism 60 drives the holder rotation drive unit 61 based on the drive signal received from the control device 50 to rotate the substrate holder 22.
- a substrate (wafer) 21 to be processed is first installed on a substrate holder 22.
- the substrate 21 is carried onto the substrate holder 22 while maintaining the degree of vacuum in the chamber 10 through a gate valve (not shown), for example, by a handling robot provided in an adjacent vacuum transfer chamber (not shown).
- a discharge gas such as Ar is introduced into the chamber 10 from the discharge gas introduction system 41.
- a reactive gas is introduced into the chamber 10 from the reactive gas introduction system 13.
- each target has, for example, a disk shape and is formed in the same size.
- the inclination angle of the cathode is not particularly limited in the application of the present embodiment, but the angle ⁇ of the cathode central axis with respect to the normal line of the processing surface of the substrate 21 is more than 0 ° and not more than 45 °. It is preferable to arrange the cathode unit 40 as described above. More preferably, when the angle ⁇ is set to 5 ° or more and 35 ° or less, excellent in-plane uniformity can be obtained.
- discharge power is supplied from a power source (not shown) to the target surface of the first cathode unit 40a to generate plasma discharge between the substrate holder 22 and the first target is sputtered. Then, a first layer is formed on the substrate 21.
- the position sensor 23 detects the rotational position of the substrate 21 during the discharge of the first cathode unit 40a, and the position is controlled by the holder rotation control unit 51 according to the detected rotational position.
- the rotational speed of the substrate 21 is adjusted according to the rotational position detected by the sensor 23.
- the power source is sequentially switched, and the film forming operation is similarly performed for the second cathode unit 40b to the fifth cathode unit 40e.
- FIG. 5 is a diagram for explaining the positional relationship between the target and the substrate and the phase of the substrate according to this embodiment.
- FIG. 6 is explanatory drawing which shows the control map of the rotational speed of the board
- the positional relationship between the target and the substrate in this embodiment will be described with reference to FIG.
- the substrate 21 is placed on a rotatable substrate holder 22, and the target 400 is disposed obliquely above the substrate 21 so that its normal line is inclined by 30 ° with respect to the normal line of the substrate. Further, the normal of the target 400 does not need to intersect the center of the substrate and does not need to intersect the substrate surface.
- a distance from the center of the disk-shaped target 400 to a plane including the substrate surface is defined as a T / S distance. In the present embodiment, the distance T / S is 240 mm.
- the rotation phase (rotation angle) ⁇ of the substrate is defined as 90 ° closest to the target and 270 ° farthest from the target, and 90 ° clockwise from the position where the rotation angle ⁇ is 90 °.
- a point rotated by 0 ° is defined as 0 °
- a point rotated 90 ° counterclockwise from the 90 ° position is defined as 180 °.
- the starting point of the substrate rotation is set when the notch or orientation flat 212 of the substrate 21 is at a position of 180 °, but is not limited to this. As shown in FIG.
- the substrate 21 in this embodiment is provided with a notch or orientation flat 212 so that the longitudinal surfaces of the mesa structure 211 face each other. Therefore, when the notch or orientation flat 212 is at the positions of 90 ° and 270 °, the surface in the longitudinal direction faces the target.
- the rotational speed y of the substrate is a sine wave with respect to the rotational phase ⁇ of the substrate, as shown in FIGS. So as to control the rotation speed.
- the holder rotation control unit 51 as the rotation control means of the present invention calculates the rotation speed as a sine wave function having a double period of the rotation angle ⁇ of the substrate 21 based on the above formula (1).
- A is the amplitude of the rotational speed, and is obtained by multiplying the reference speed B by the variation rate a as shown in the equation (2).
- ⁇ is a phase difference, and the film thickness distribution on the side surface of the mesa structure can be optimized by changing the variation rate a and the phase difference ⁇ .
- the range of the rotation phase ⁇ of the substrate is 0 ° ⁇ ⁇ 360 °.
- the phase difference ⁇ may be set to ⁇ 45 ° or 45 °.
- the side surfaces 211a and 211b of the mesa structure 211 are the processed surfaces of the mesa structure 211. Therefore, the holder rotation control unit 51 includes a line segment that connects the center of the film formation target 400 and the rotation center of the substrate holder 22 when the rotation angle ⁇ is 0 ° and 180 °, and the substrate holder When the longitudinal direction of the mesa structure 211 is parallel to the plane A perpendicular to the substrate support surface 22 (substrate processing surface of the substrate 21) (hereinafter also referred to as “first rotation state”), The drive signal is generated so that the rotation speed becomes the slowest.
- mesa structures other than the mesa structure that passes through the center of the substrate holder 22 and is arranged on a line of 90 ° ⁇ 270 ° of the rotation angle ⁇ when the rotation angle ⁇ 0 °.
- the present embodiment by controlling the rotation of the substrate holder 22 so as to make the rotation speed of the substrate 21 in the second rotation state as high as possible, it is possible to cause a large variation in film thickness between the side surface 211a and the side surface 211b.
- the film formation in the second rotation state is reduced as much as possible.
- the longitudinal direction of the mesa structure 211 is parallel to the plane A.
- the target 400 is positioned on the direction side parallel to the side surface 211a and the side surface 211b and parallel to the in-plane direction of the substrate 21. Therefore, the side surface 211a and the side surface 211b face the target 400 in the same manner. Therefore, the distance between the side surface 211a and the target 400 and the distance between the side surface 211b and the target 400 can be made substantially the same, and the variation in film thickness between the side surface 211a and the side surface 211b can be reduced.
- a membrane can be performed.
- the rotation of the substrate holder 22 is controlled so that the rotation speed of the substrate 21 in the first rotation state is as slow as possible.
- the holder rotation control unit 51 is a sine wave function (a sine wave function in which the sine wave of the rotation speed travels two cycles) in which the maximum value and the minimum value are generated twice while the substrate holder 22 rotates once, that is, It is preferable to control the rotation of the substrate holder 22 according to the relational expression between the rotation angle ⁇ and the rotation speed of the substrate (rotation speed of the substrate holder 22) y as shown in the equation (1) and FIG.
- the control map shown in FIG. 6 may be stored in advance in a memory such as a ROM included in the control device 50.
- the control map is stored in advance in the memory. Therefore, when the target speed calculation unit 51a receives information on the rotation position of the substrate 21 from the position sensor 23, the target speed calculation unit 51a refers to the control map shown in FIG. 6 stored in the memory and corresponds to the current rotation angle ⁇ of the substrate 21. The target rotation speed is extracted, the target rotation speed is acquired, and the acquired target rotation speed is output to the drive signal generation unit 51b.
- the rotation speed of the substrate 21 can be controlled most slowly, and when the rotation angle ⁇ is 90 ° or 270 °, the substrate 21 is in the second rotation state. Can be controlled at the highest speed.
- the first surface (side surface 211a) and the second surface are formed in a certain mesa structure by controlling the film formation in the first rotation state rather than the second rotation state in this way.
- the first rotation state is more than the film formation in the second rotation state, which causes the film thickness variation between the first surface and the second surface. It is to make the film formation in the dominant. Therefore, as long as the holder rotation control unit 51 controls the rotation of the substrate holder 22 so that the rotation speed of the substrate 21 in the first rotation state is smaller than the rotation speed of the substrate 21 in the second rotation state.
- the film formation in the first rotation state can be made more dominant than the film formation in the second rotation state, and the effects of the present invention can be obtained.
- the mesa structure 211 has been described as the concavo-convex structure formed on the substrate 21.
- the concavo-convex structure may be a trench structure or a V-groove formed on the processing surface of the substrate 21.
- Examples of such a trench structure and V-groove include a trench structure in which an opening is formed in a rectangular shape and the longitudinal directions thereof are parallel, and a V-groove.
- an inverted trapezoidal structure in which the frontage is narrowed from the opening toward the bottom may be used.
- the holder rotation control unit 51 has two inner wall surfaces facing each other to be processed (for example, parallel to the longitudinal direction of the trench structure or the V-groove).
- the substrate holder 22 is rotated relatively slowly (preferably so that the rotation speed becomes the minimum value). 22 is controlled.
- the holder rotation control unit 51 is configured such that when the two mutually facing inner wall surfaces that are to be processed among the four inner wall surfaces of the trench structure and the V-groove are perpendicular to the plane A, the substrate holder The rotation of the substrate holder 22 is controlled so that the rotation of the substrate 22 becomes relatively fast (preferably, the rotation speed becomes a maximum value).
- the uneven structure has a mesa structure, a trench structure, a V-groove, or a concave or convex structure regardless of the corrugated uneven structure described later
- the target 400 to be deposited is positioned in a direction (hereinafter also referred to as a first direction) parallel to the side surface of the structure and parallel to the in-plane direction of the substrate processing surface (in the above-described first rotation state).
- the rotation drive mechanism 60 is controlled so that the rotation speed of the substrate 21 is relatively slow.
- the rotation drive mechanism 60 is controlled so that the rotation speed of the substrate 21 becomes relatively high.
- the formation in a situation that greatly contributes to the variation in film thickness between the first surface and the second surface of the concavo-convex structure. It is possible to increase the rate of film formation in a situation where the ratio of the film is small and the film does not contribute much to the variation in film thickness between the first surface and the second surface. Therefore, the uniformity of the film thickness formed on the first surface and the film thickness formed on the second surface can be improved.
- Example 1 Using the sputtering apparatus 1 according to the present embodiment, the film thickness distribution in the case where there is an uneven structure on the substrate was examined.
- the film thickness distribution was obtained from the maximum value and the minimum value of the film thickness within the substrate surface by the following equation. (Maximum value ⁇ minimum value) / (maximum value + minimum value) ⁇ 100 (%) (3)
- FIG. 7A shows a schematic diagram of a substrate with a mesa structure used to verify the effect of this embodiment.
- 7B is a cross-sectional view taken along line AA ′ of the mesa structure 211 shown in FIG. 7A.
- a mesa structure 211 having a rectangular shape with a bottom surface dimension of 4 ⁇ 2 ⁇ m is formed at the center of the substrate 21 which is a silicon (Si) substrate having a diameter of 200 mm and at a point 75 mm away from the center in four directions including the direction of the notch 212a. ing.
- Each mesa structure 211 is arranged so that the longitudinal direction of the rectangle is perpendicular to the straight line including the center of the substrate and the notch 212a.
- an object is to form a thin film uniformly on the notch side surface (side surface 212a) and the opposite side surface (side surface 212b) among the two side surfaces along the longitudinal direction.
- the inclination angles of the notch side surface and the opposite side surface of the substrate with respect to the processing surface 21a are both 35 °.
- ⁇ was an optimum value of 45 °.
- a Cu target having a diameter of 164 mm was used as the sputtering target, the inclination angle of the target normal to the substrate normal was 30 °, the T / S distance was 240 mm, and the power supplied to the target was 200 W DC, The Ar gas flow rate to be introduced was 30 sccm. Under such conditions, a Cu thin film was deposited to a thickness of 25 nm on a substrate having a diameter of 200 mm.
- FIG. 8 shows a graph of the substrate rotation speed y with respect to the rotation phase ⁇ of the substrate 21 with respect to the above conditions A, B, and C.
- reference numeral 81 is a plot for the condition A
- reference numeral 82 is a plot for the condition B
- reference numeral 83 is a plot for the condition C.
- ⁇ is 45 ° because the phase difference with respect to the rotational phase of the substrate is 2 ⁇ according to the equation (1), which is substantially a phase difference of 90 °.
- the substrate rotation speed takes a maximum value of 33 rpm when the substrate rotation phase ⁇ is at the positions of 90 ° and 270 °, and takes a minimum value of 27 rpm when the substrate rotation phase ⁇ is at the positions of 0 ° and 180 °.
- the longitudinal direction of the mesa structure 211 which is the direction in which the target side surfaces 211a and 211b of the mesa structure 211 extend, includes a line segment connecting the center of the target and the rotation center of the substrate holder 22, and is on the substrate processing surface.
- the rotation speed is maximum when it is perpendicular to a plane perpendicular to the plane. Further, when the direction parallel to both the side surfaces 211a and 211b is parallel to the plane, the rotational speed is minimized.
- Table 1 shows the maximum and minimum film thicknesses on the notch side surface (side surface 211b) and the opposite side surface (side surface 211a) of the five mesa structures 211 on the substrate 21 when the film is formed under the above conditions A to C.
- required from a value and Formula (3) is listed.
- the distribution was ⁇ 3.3%.
- the condition B in which the substrate rotation control is performed such that the period of the sine wave advances by one period while the substrate rotates once, the optimum value is obtained when the phase difference ⁇ is 90 °.
- the film thickness distribution was exactly the same as in condition A.
- condition C the optimum value of the phase difference ⁇ can be obtained when the optimum value is 45 °, and the film thickness distribution at that time is ⁇ 2.7%.
- condition B where a conventional rotation control method was used, the best value of the film thickness distribution was obtained.
- Example 3 In Examples 1 and 2, even if the concavo-convex structure on the processing surface side of the substrate is a trench structure 111 as shown in FIGS. 9A and 9B, the substrate rotation speed is controlled using the double-period sine wave function of this embodiment. Accordingly, an effect of improving the film thickness distribution in the trench structure 111 can be expected.
- the inner wall surface 111a is the first surface outside the substrate 21, the inner wall surface 111b is the second surface on the center side of the substrate 21, and these two surfaces are treated surfaces.
- the holder rotation control unit 51 has a relatively low rotation speed (preferably, a minimum value) of the rotation holder 22.
- the rotation drive mechanism 60 is controlled to control the rotation of the substrate holder 22.
- the holder rotation control unit 51 makes the rotation speed of the rotation holder 22 relatively large (preferably the maximum value) when the longitudinal direction b of the trench structure 111 is perpendicular to the plane A.
- the rotation drive mechanism 60 is controlled to control the rotation of the substrate holder 22.
- the concavo-convex structure on the processing surface side of the substrate 21 is an concavo-convex structure in which the entire or part of the substrate processing surface 123 of the substrate 21 has a periodically corrugated cross section as shown in FIGS. , Also called “corrugated uneven structure”).
- FIGS. 10A and 10B when the ridge lines 121 and the valley lines 122 of the corrugated concavo-convex structures are aligned substantially in parallel, the substrate rotation speed is obtained using the double-period sine wave function of this embodiment. By controlling the (rotational speed), an effect of improving the film thickness distribution in the substrate surface can be expected.
- reference numeral 124 denotes the back surface of the substrate 21.
- Example 5 In Example 4, even if the cross-sectional waveform of the corrugated concavo-convex structure is one or two or more waveforms selected from the group of sine, rectangular, triangular or trapezoidal waveforms as shown in FIGS.
- the effect of improving the film thickness distribution in the substrate surface can be expected by controlling the substrate rotation speed using the double-period sine wave function of the embodiment.
- the holder rotation control unit 51 when the ridge line and the valley line of the corrugated concavo-convex structure are parallel to the plane A, the holder rotation control unit 51 has a relatively low rotation speed of the rotary holder 22 (preferably , The minimum value), the rotation drive mechanism 60 is controlled to control the rotation of the substrate holder 22. Furthermore, the holder rotation control unit 51 rotates so that when the ridge line and the valley line are perpendicular to the plane A, the rotation speed of the rotation holder 22 is relatively large (preferably maximum value). The drive mechanism 60 is controlled to control the rotation of the substrate holder 22.
- FIG. 12 is an explanatory diagram showing a TMR element 131 used in a magnetic head for a hard disk drive (HDD) as an example of a mesa structure on the substrate 21 according to this embodiment.
- the TMR element is a magnetic effect element (TMR (Tunneling Magnetoresistance) element).
- the basic layer configuration of the TMR element 131 includes a magnetic tunnel junction portion (MTJ portion) having a magnetization fixed layer, a tunnel barrier layer, and a magnetization free layer.
- the magnetization fixed layer is made of a ferromagnetic material
- the tunnel barrier layer is made of a metal oxide (magnesium oxide, alumina, etc.) insulating material
- the magnetization free layer is made of a ferromagnetic material.
- the TMR element 131 is formed on the lower electrode 132 formed on the substrate 21.
- the TMR element 131 applies an external magnetic field and applies the same voltage between the ferromagnetic layers on both sides of the tunnel barrier layer and applies a constant current, and the magnetization directions of the ferromagnetic layers on both sides are the same in parallel. (Referred to as “parallel state”), the electrical resistance of the TMR element is minimized. Further, when the magnetization directions of the ferromagnetic layers on both sides are parallel and opposite (referred to as “anti-parallel state”), the electrical resistance of the TMR element 131 has a maximum characteristic.
- the magnetization fixed layer fixes the magnetization, and the magnetization free layer is formed in a state in which the magnetization direction can be reversed by applying an external magnetic field for writing.
- the magnetization fixed layer for example, a material containing a ferromagnetic material such as Co, Fe, or Ni as a main component and appropriately adding a material such as B can be used.
- the above-described TMR element 131 is formed on a flat substrate surface by a film forming method such as sputtering, and is processed into a mesa shape by an ion milling method or a reactive etching method. Thereafter, an insulating film 133, a metal film 134, a magnetic film 135, and a metal film 136 are formed on the side wall surfaces (the side surface 211a and the side surface 211b of the mesa structure 211 in FIG. 2) by a film formation method such as sputtering. At this time, it is desirable that the film thickness of each film to be formed on the side wall surface is uniform on both side walls of the mesa shape.
- the film thickness be uniform between the TMR elements as mesa structures regularly arranged on the entire surface of the substrate. Therefore, the above-described film thickness uniformity can be improved by using the sputtering apparatus and the film forming method of the present embodiment.
- the rotation speed of the substrate (substrate holder) is changed between the first rotation state and the second rotation state while keeping the emission amount of the sputtered particles emitted from the target constant.
- the rotation method of the substrate (substrate holder) may be continuous rotation or non-continuous pulse rotation. In the present embodiment, the form of the non-continuous pulse rotation will be described.
- FIG. 13A is an explanatory diagram of a case where the substrate (substrate holder) is continuously rotated when the rotation speed of the substrate rotation is controlled according to the first embodiment.
- FIG. 13B is an explanatory diagram of a case where the substrate (substrate holder) is rotated discontinuously when the rotational speed of the substrate rotation is controlled according to the present embodiment.
- the holder rotation control unit 51 When the substrate 21 (substrate holder 22) is continuously rotated, as shown in FIG. 13A, the holder rotation control unit 51 performs the substrate 21 rotation (one cycle) according to the equation (1). A drive signal is generated so that the rotation speed (angular speed ⁇ ) of the substrate 21 is continuously changed so that the rotation speed of the substrate 21 is modulated in two cycles. That is, the holder rotation control unit 51 controls the rotation of the substrate holder 22 so that the substrate 21 rotates continuously.
- f 0 is a reference discharge amount of sputtered particles from the target
- ⁇ 0 is a reference angular velocity.
- the holder rotation control unit 51 controls the rotation stop time s as shown in FIG. 13B. That is, for example, the holder rotation control unit 51 stops the rotation of the substrate 21 at a predetermined plurality of rotation angles, and the rotation unit of the substrate holder 22 rotates at a constant angular velocity (rotation speed) at other rotation angles. Thus, the rotation of the substrate holder 22 is controlled. By such control, the rotation speed of the substrate 21 is controlled so that the substrate 21 rotates discontinuously.
- the holder rotation control unit 51 may keep the rotation speed of the rotation unit of the substrate holder 22 constant as described above, or may change it.
- the rotation stop time s indicates a time during which the rotation of the substrate holder 22 is stopped when the substrate holder 22 is rotated discontinuously.
- s 0 is the reference rotation stop time.
- the first rotation state and the second rotation state appear twice each time the substrate 21 (substrate holder 22) is rotated once. Therefore, in this embodiment, the stop time of the substrate 21 (substrate holder 22) is sinusoidally modulated in two cycles while the substrate 21 (substrate holder 22) is rotated once (one cycle).
- the rotation stop time is relatively long (preferably the longest), In the case where the target is positioned on the direction side that is vertical and parallel to the in-plane direction of the substrate processing surface, the rotation stop time can be relatively short (preferably shortest).
- the drive signal may be generated so that the rotation stop time s becomes relatively short.
- the target when the substrate holder 22 rotates, the target is positioned on the direction side parallel to the side surface of the concavo-convex structure and parallel to the in-plane direction of the substrate processing surface.
- the main feature is to relatively increase the rate of film formation when the target is positioned, and to relatively decrease the rate of film formation when the target is positioned on the vertical side along the rotation of the direction and the substrate. .
- FIG. 14 is a block diagram of the control device 50 according to the present embodiment.
- the control device 50 includes a cathode power control unit 141 as a power control unit that adjusts the power (power) to the cathode unit 40 according to the rotational position detected by the position sensor 23.
- the cathode power control unit 141 includes a target power calculation unit 141a and an output signal generation unit 141b, and depends on the rotation position of the substrate based on the positional relationship between the rotation position of the substrate 21 and the cathode unit 40 during discharge. And has a function of controlling power to the cathode unit 40.
- the control device 50 is configured to receive information regarding the rotational position of the substrate holder 22 from the position sensor 23.
- the target power calculation unit 141a performs the processing based on the value of the current rotational position of the substrate holder 22 input from the position sensor 23 that detects the rotational position of the substrate holder 22.
- the target power (target power) at the position is calculated.
- the value of the target power can be calculated, for example, by storing the correspondence relationship between the rotation position of the substrate holder 22 and the target power in advance in a memory or the like provided in the control device 50 as a map.
- the output signal generator 141 b Based on the target power calculated by the target power calculator 141 a, the output signal generator 141 b generates an output signal for setting the target power and outputs the output signal to the discharge power supply 70.
- the control device 50 is configured to transmit the output signal generated by the output signal generation unit 141b to the discharge power supply 70.
- the discharge power supply 70 includes a power output unit 71 that supplies discharge power (discharge power) to the cathode unit 40, a target value, and an actual value (rotation position) output from the position sensor 23. And a feedback control unit 72 that determines an operation value of the power output unit 71 based on a deviation from the rotation speed).
- feedback control is not an essential configuration of the present invention.
- the process of this embodiment will be described by taking as an example the case where the mesa structure 211 shown in FIG. 2 is used as the concavo-convex structure and the side surfaces 211a and 211b are the surfaces to be processed of the mesa structure 211.
- the rotation speed of the substrate holder 22 is constant.
- the amount of sputtered particles flying onto the substrate 21 (substrate holder 22) in the first rotation state is determined as the second rotation.
- the discharge power supplied to the cathode unit 40 is controlled so as to increase the amount of sputtered particles flying onto the substrate 21 in the state. Accordingly, when the side surfaces 211a and 211b, which are to-be-processed surfaces of the mesa structure 212, face the cathode, the amount of sputtered particles reaching the side surfaces 211a and 211b is reduced, so that they are formed on the side surfaces 211a and 211b. Variation in film thickness can be suppressed.
- the side surfaces 211a and 211b rotate 90 ° from the position facing the cathode, the amount of sputtered particles that reach the side surfaces 211a and 211b increases, so that the side surface 211a and the side surface 211b are the same as the target.
- the rate of film formation can be increased in the case of facing. Therefore, the film formation that causes the film thickness of the side surface 211a and the film thickness of the side surface 211b to be non-uniform is reduced, and the film formation that greatly contributes to the uniform film thickness of the side surface 211a and the side surface 211b is dominant. And variation in film thickness between the side surface 211a and the side surface 211b can be reduced.
- the rotation method of the substrate holder may be continuous rotation or non-continuous pulse rotation.
- FIG. 15A is an explanatory diagram of a case where the substrate (substrate holder) is continuously rotated when the input power to the cathode is controlled according to the present embodiment.
- FIG. 15B is an explanatory diagram of a case where the substrate (substrate holder) is rotated discontinuously when the input power to the cathode is controlled according to the present embodiment.
- the cathode power control unit 141 can calculate the discharge power corresponding to the rotation angle ⁇ of the substrate 21 by using a double period sine wave function similar to the equation (1).
- the cathode power control unit 141 applies to the cathode unit 40 so as to modulate the input power (input power) to the cathode unit 40 for two periods while the substrate 21 (substrate holder 22) rotates once (one period).
- An output signal is generated so as to continuously change the input power.
- the discharge power source 70 may be controlled so that the discharge amount f is minimized.
- the cathode power control unit 141 uses the power supplied to the film formation target cathode unit in the first rotation state based on the power supply to the film formation target cathode unit in the second rotation state. Also, the electric power supplied to the cathode unit to be deposited is controlled by controlling the discharge power source 70 so that the power is also increased.
- the plurality of cathode units 40 in the sputtering apparatus 1 shown in FIG. 1 are replaced with one cathode unit 101 having a hexagonal column shape.
- the cathode unit 101 is configured to be rotatable around the column axis 101 a, and one target 102 can be disposed on each side surface of the cathode unit 101.
- the cathode unit 101 is configured such that a voltage can be individually applied to each target 102 disposed on each side surface. In such a configuration, the sputtering apparatus 100 can select a desired target by rotating around the column axis 101a.
- the discharge gas introduction system 41 is moved to the vicinity of the cathode unit 101 on the side surface of the vacuum chamber 10.
- the sputtering apparatus 100 can form a laminated film on the substrate 21 by rotating the cathode units 101 sequentially or alternately.
- the sputtering apparatus shown in FIG. 17 includes a target holder 201 having a simple polygonal column structure in which a cathode function is removed from the cathode unit 101 having a hexagonal column shape in the sputtering apparatus 100 shown in FIG. Further, in the sputtering apparatus shown in FIG. 17, the cathode unit is eliminated by providing the target holder 201, and the ion beam source 202 is disposed on the bottom surface of the vacuum chamber 10 instead. The ion beam accelerated from the ion beam source 202 is incident on the target 102 disposed on the side surface of the target holder 201 having a hexagonal column shape and sputters the target surface.
- a desired target can be selected by rotating a target holder having a hexagonal column shape around a column axis.
- the discharge gas introduction system 41 is disposed in the ion beam source, and it is considered that the discharge gas is introduced into the ion beam source 202.
- the sputtering apparatus 200 can form a laminated film on the substrate 21 by rotating the target holder 201 sequentially or alternately.
- the arrangement position of the ion beam source 202 is not limited to the bottom surface of the vacuum chamber 10, but may be a position diagonally opposite to the sputtering target (that is, the sputtering target support surface of the target holder 201) and separately from the substrate holder 22. You may arrange in any place.
- One embodiment of the present invention can be used not only for the exemplified magnetic head for HDD but also for various fields such as HDD magnetic recording medium, magnetic sensor, thin film solar cell, issuing element, piezoelectric element, and semiconductor wiring formation. .
- both the form of controlling the rotation speed of the substrate of the first embodiment and the form of controlling the input power to the cathode unit of the second embodiment may be performed.
- the control device 50 may be configured so that the control device 50 includes both the holder rotation control unit 51 and the cathode power control unit 141.
- control device 50 may be built in the sputtering device or a local device such as a LAN as long as it can control the rotation drive mechanism and discharge power source of the substrate holder included in the sputtering device.
- a local device such as a LAN
- it may be provided separately from the sputtering apparatus through a WAN connection such as the Internet.
- a processing method in which a program for operating the configuration of the above-described embodiment so as to realize the function of the above-described embodiment is stored in a storage medium, the program stored in the storage medium is read as a code, and executed on a computer. It is included in the category of the above-mentioned embodiment. That is, a computer-readable storage medium is also included in the scope of the embodiments. In addition to the storage medium storing the computer program, the computer program itself is included in the above-described embodiment.
- a storage medium for example, a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a magnetic tape, a nonvolatile memory card, and a ROM can be used.
- processing is not limited to the single program stored in the above-described storage medium, but operates on the OS in cooperation with other software and expansion board functions to execute the operations of the above-described embodiments. This is also included in the category of the embodiment described above.
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Abstract
Description
図1から図3を参照して、本実施形態に係るスパッタリング装置について説明する。図1は本実施形態のスパッタリング装置を模式的に示す概略断面図である。また、図2は本実施形態に係る処理面に凹凸構造が集積された基板の一例を模式的に示す平面図および凹凸構造の拡大図である。さらに、図3は基板ホルダとカソードユニットとの配置関係を模式的に示す平面図である。なお、図1は図3のAOB断面に相当する。
A=a・B ・・・(2)
本実施形態に係るスパッタリング装置1を用いて基板上に凹凸構造がある場合の膜厚分布を調べた。なお膜厚分布は、基板面内の膜厚の最大値と最小値から次式によって求めた。
(最大値-最小値)/(最大値+最小値)×100(%) ・・・(3)
図7Aは本実施形態の効果を検証するのに用いたメサ構造付きの基板の概略図を示している。また図7Bは、図7Aに示すメサ構造211のA-A’線断面図である。直径200mmのシリコン(Si)基板である基板21の中心と、中心からノッチ212a方向を含む4方向に75mmだけ離れた点に、底面寸法が4×2μmの長方形を成したメサ構造211が形成されている。各メサ構造211は、長方形の長手方向が基板中心とノッチ212aを含む直線に対して垂直になるように配置されている。このようなメサ構造211において長手方向に沿った2つ側面のうち、ノッチ側側面(側面212a)とその逆側側面(側面212b)にそれぞれ均一に薄膜を成膜することを目的とする。なお、本実施例ではノッチ側側面および逆側側面の基板の処理面21aに対する傾斜角はともに35°のものを用いた。
条件A.基板21の回転速度(基板ホルダ22)を30rpm一定とした場合。つまり、前述の式(1)および式(2)において、a=0、B=30とした場合。
条件B.基板21(基板ホルダ22)が1回転する間に正弦波の周期が1周期だけ進行する場合。具体的には、式(1)を
y=Asin(θ-α)+B ・・・(4)
のように変形する。変動率aおよび基準回転速度Bは、それぞれ、0.1、30とし、このとき式(2)より、A=3となる。αは最適値の90°とした。
条件C.基板21(基板ホルダ22)が1回転する間に正弦波の周期が2周期進行する場合(本実施形態)において、上記条件Bと同様にa=0.1、B=30、A=3とした。αは最適値の45°とした。その他の成膜条件では、スパッタリングターゲットとして直径164mmのCuターゲットを用い、基板の法線に対するターゲットの法線の傾斜角を30°、T/S距離を240mm、ターゲットに供給する電力を直流200W、導入するArガス流量を30sccmとした。このような条件で、直径200mmの基板上にCu薄膜を25nm堆積させた。
基板回転制御を行わない条件Aの場合、±3.3%の分布であった。それに対して、基板が1回転する間に正弦波の周期が1周期だけ進行するような基板回転制御を行った条件Bの場合では、位相差αが90°の時に最適値を得たが、条件Aの場合と全く同じ膜厚分布となった。これらに対して、本実施形態を適用した条件Cの場合、位相差αは最適値が45°の時に最適値を得ることができ、その時の膜厚分布は±2.7%であった。回転制御しない条件Aおよび従来の回転制御方法を用いた条件Bと比較して、最も膜厚分布の良い値が得られた。
実施例1の条件Cにおいて、位相差αを最適値の45°に固定したまま、変動率aを0.1から0.7まで試した。膜厚分布の測定結果を表2に示す。本実施例に対してはa=0.5で膜厚分布が最も良くなることがわかった。
実施例1及び2において基板の処理面側の凹凸構造が、図9A、9Bに示すようにトレンチ構造111であっても本実施形態の2倍周期正弦波関数を用いて基板回転数を制御することによってトレンチ構造111内における膜厚分布の改善効果が期待できる。
本実施例では、基板21の処理面側の凹凸構造が、図10A、10Bに示すように、基板21の基板処理面123の全面または一部分がその断面が周期的に波形となる凹凸構造(以下、“波形凹凸構造”とも呼ぶ)を成している。本実施例では、図10A、10Bに示すように、各波形凹凸構造の稜線121および谷線122が略平行に揃っている時、本実施形態の2倍周期正弦波関数を用いて基板回転数(回転速度)を制御することによって基板面内における膜厚分布の改善効果が期待できる。なお、図10A、10Bにおいて、符号124は、基板21の裏面である。
実施例4において、波形凹凸構造の断面波形が図11A~11Dに示すような正弦波形、矩形波形、三角波形または台形波形の群から選ばれる1つまたは2つ以上の波形であっても、本実施形態の2倍周期正弦波関数を用いて基板回転数を制御することによって基板面内における膜厚分布の改善効果が期待できる。
図12は本実施形態に係る基板21上のメサ構造の例としてハードディスクドライブ(HDD)用磁気ヘッドに用いられるTMR素子131を示す説明図である。ここで、TMR素子とは、磁気効果素子(TMR(Tunneling Magneto resistance:トンネル磁気抵抗効果)素子)である。
上述のように、第1の実施形態では、ターゲットから放出されるスパッタ粒子の放出量を一定に保ちつつ、基板(基板ホルダ)の回転速度を、第1の回転状態と第2の回転状態とで異なるように制御している。しかしながら、該基板(基板ホルダ)の回転方式を、連続回転としても良いし、非連続パルス回転としても良い。本実施形態では、該非連続パルス回転の形態について説明する。
第1及び第2の実施形態では、基板ホルダ22の回転速度を制御する形態について説明したが、本実施形態では、カソードユニット40への投入電力(投入パワー)を制御することによって、基板へのスパッタ粒子の飛来量を制御し、凹凸構造における被処理面間の膜厚の均一化を図る。
本発明の一実施形態では、第1の実施形態の基板の回転速度を制御する形態と、第2の実施形態のカソードユニットへの投入パワーを制御する形態との双方を行っても良い。この場合は、制御装置50が、ホルダ回転制御部51およびカソードパワー制御部141の双方を含むように制御装置50を構成すれば良い。
Claims (45)
- 基板を回転可能に保持するための基板ホルダと、
前記基板ホルダの斜向かいの位置に配置された、少なくとも1つのスパッタリングターゲットを支持するためのターゲットホルダと、
前記基板ホルダ上に保持された基板の回転位置を検出するための位置検出手段と、
前記位置検出手段の検出した回転位置に応じて、前記基板の回転速度を調整する回転制御手段とを備えたスパッタリング装置であって、
前記基板ホルダに少なくとも1つの凹凸構造が形成された基板が配置された際、
前記回転制御手段は、前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記基板の回転速度が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記基板の回転速度よりも遅くなるように、前記基板の回転速度を制御することを特徴とするスパッタリング装置。 - 前記回転制御手段は、前記基板の回転角の正弦波関数として前記回転速度を算出し、該正弦波関数に基づいて前記基板の回転速度を制御することを特徴とする請求項1に記載のスパッタリング装置。
- 前記回転制御手段は、前記基板が1回転する間に前記回転速度の正弦波が2周期進行するように前記回転速度を制御することを特徴とする請求項2に記載のスパッタリング装置。
- 前記回転制御手段は、前記成膜対象のスパッタリングターゲットの中心と前記基板ホルダの回転中心とを結ぶ線分を含み、かつ前記基板の前記凹凸構造が形成された面に対して垂直な平面に対して、前記被処理面となる側面が垂直となる時、前記回転速度が最大値をとり、前記被処理面となる側面が前記平面に対して垂直になる時から前記基板が90度回転する時、前記回転速度が最小値をとるように、前記回転速度を制御することを特徴とする請求項1に記載のスパッタリング装置。
- 前記凹凸構造は、その断面が周期的な波形形状である波形凹凸構造であり、隣り合う波形凹凸構造の長手方向が略平行に揃っていることを特徴とする請求項1に記載のスパッタリング装置。
- 前記波形凹凸構造の波形が正弦波、矩形波、三角波、台形波の群から選ばれるいずれか1つまたは2つ以上の波形であることを特徴とする請求項5に記載のスパッタリング装置。
- 前記回転制御手段は、前記成膜対象のスパッタリングターゲットの中心と前記基板ホルダの回転中心とを結ぶ線分を含み、かつ前記基板の前記凹凸構造が形成された面に対して垂直な平面に対して、前記波形凹凸構造の長手方向が垂直となる時、前記回転速度が最大値をとり、前記波形凹凸構造の長手方向が前記平面に対して垂直になる時から前記基板が90度回転する時、前記回転速度が最小値をとるように、前記回転速度を制御することを特徴とする請求項5に記載のスパッタリング装置。
- 基板を非連続的に回転可能に保持するための基板ホルダと、
前記基板ホルダの斜向かいの位置に配置された、少なくとも1つのスパッタリングターゲットを支持するためのターゲットホルダと、
前記基板ホルダ上に保持された基板の回転位置を検出するための位置検出手段と、
前記位置検出手段の検出した回転位置に応じて、前記基板の回転停止時間を調整する回転制御手段とを備えたスパッタリング装置であって、
前記基板ホルダに少なくとも1つの凹凸構造が形成された基板が配置された際、
前記回転制御手段は、前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記基板の回転停止時間が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記基板の回転停止時間よりも長くなるように、前記基板の回転停止時間を制御することを特徴とするスパッタリング装置。 - 前記回転制御手段は、前記基板の回転角の正弦波関数として前記回転停止時間を算出し、該正弦波関数に基づいて前記基板の回転停止時間を制御することを特徴とする請求項8に記載のスパッタリング装置。
- 前記回転制御手段は、前記基板が1回転する間に前記回転停止時間の正弦波が2周期進行するように前記回転停止時間を制御することを特徴とする請求項9に記載のスパッタリング装置。
- 前記回転制御手段は、前記成膜対象のスパッタリングターゲットの中心と前記基板ホルダの回転中心とを結ぶ線分を含み、かつ前記基板の前記凹凸構造が形成された面に対して垂直な平面に対して、前記被処理面となる側面が垂直となる時、前記回転停止時間が最小値をとり、前記被処理面となる側面が前記平面に対して垂直になる時から前記基板が90度回転する時、前記回転停止時間が最大値をとるように、前記回転停止時間を制御することを特徴とする請求項8に記載のスパッタリング装置。
- 前記凹凸構造は、その断面が周期的な波形形状である波形凹凸構造であり、隣り合う波形凹凸構造の長手方向が略平行に揃っていることを特徴とする請求項8に記載のスパッタリング装置。
- 前記波形凹凸構造の波形が正弦波、矩形波、三角波、台形波の群から選ばれるいずれか1つまたは2つ以上の波形であることを特徴とする請求項12に記載のスパッタリング装置。
- 前記回転制御手段は、前記成膜対象のスパッタリングターゲットの中心と前記基板ホルダの回転中心とを結ぶ線分を含み、かつ前記基板の前記凹凸構造が形成された面に対して垂直な平面に対して、前記波形凹凸構造の長手方向が垂直となる時、前記回転停止時間が最小値をとり、前記波形凹凸構造の長手方向が前記平面に対して垂直になる時から前記基板が90度回転する時、前記回転停止時間が最大値をとるように、前記回転停止時間を制御することを特徴とする請求項12に記載のスパッタリング装置。
- 基板を回転可能に保持するための基板ホルダと、
前記基板ホルダの斜向かいの位置に配置された少なくとも1つのスパッタリングターゲットをスパッタするためのカソードユニットと、
前記基板ホルダ上に保持された基板の回転位置を検出するための位置検出手段と、
前記位置検出手段の検出した回転位置に応じて、前記カソードユニットへの供給電力を調整する電力制御手段とを備えたスパッタリング装置であって、
前記基板ホルダに少なくとも1つの凹凸構造が形成された基板が配置された際、
前記電力制御手段は、前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象の前記スパッタリングターゲットが位置する際の前記カソードユニットへの供給電力が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象の前記スパッタリングターゲットが位置する際の前記カソードユニットへの供給電力よりも大きくなるように、前記カソードユニットへの供給電力を調整することを特徴とするスパッタリング装置。 - 前記電力制御手段は、前記基板の回転角の正弦波関数として前記供給電力を算出し、該正弦波関数に基づいて前記カソードユニットへの供給電力を制御することを特徴とする請求項15に記載のスパッタリング装置。
- 前記電力制御手段は、前記基板が1回転する間に前記供給電力の正弦波が2周期進行するように前記供給電力を制御することを特徴とする請求項16に記載のスパッタリング装置。
- 前記電力制御手段は、成膜対象の前記スパッタリングターゲットの中心と前記基板ホルダの回転中心とを結ぶ線分を含み、かつ前記基板の前記凹凸構造が形成された面に対して垂直な平面に対して、前記被処理面となる側面が垂直となる時、前記供給電力が最小値をとり、前記被処理面となる側面が前記平面に対して垂直になる時から前記基板が90度回転する時、前記供給電力が最大値をとるように、前記供給電力を制御することを特徴とする請求項15に記載のスパッタリング装置。
- 前記凹凸構造は、その断面が周期的な波形形状である波形凹凸構造であり、隣り合う波形凹凸構造の長手方向が略平行に揃っていることを特徴とする請求項15に記載のスパッタリング装置。
- 前記波形凹凸構造の波形が正弦波、矩形波、三角波、台形波の群から選ばれるいずれか1つまたは2つ以上の波形であることを特徴とする請求項19に記載のスパッタリング装置。
- 前記電力制御手段は、前記成膜対象のスパッタリングターゲットの中心と前記基板ホルダの回転中心とを結ぶ線分を含み、かつ前記基板の前記凹凸構造が形成された面に対して垂直な平面に対して、前記波形凹凸構造の長手方向が垂直となる時、前記供給電力が最小値をとり、前記波形凹凸構造の長手方向が前記平面に対して垂直になる時から前記基板が90度回転する時、前記供給電力が最大値をとるように、前記供給電力を制御することを特徴とする請求項19に記載のスパッタリング装置。
- 前記ターゲットホルダと一体にまたは別個に設けられた、前記スパッタリングターゲットをスパッタするためのカソードユニットをさらに備えることを特徴とする請求項1に記載のスパッタリング装置。
- 前記カソードユニット及び前記スパッタリングターゲットは前記基板ホルダの回転軸周りに複数個配置され、
個々のカソードユニットに順次または交互に電圧を印加することによって、前記基板上に積層膜を成膜することを特徴とする請求項22に記載のスパッタリング装置。 - 前記カソードユニットは、多角柱構造のカソードユニットであり、該多角柱のカソードユニットの側面の各々にはスパッタリングターゲットが配置可能であり、
前記多角柱構造のカソードユニットを順次または交互に回転することによって、前記基板上に積層膜を成膜することを特徴とする請求項22に記載のスパッタリング装置。 - 前記カソードユニットは、多角柱構造のターゲットホルダであり、該多角柱構造のターゲットホルダの側面の各々にはターゲットが配置可能であり、
前記スパッタリングターゲットにイオンビームを照射するためのイオンビーム源が、前記多角柱構造のターゲットホルダの斜向かい、かつ前記基板ホルダとは別個の位置に配置されており、
前記多角柱構造のターゲットホルダを順次または交互に回転することによって、前記基板上に積層膜を成膜することを特徴とする請求項22に記載のスパッタリング装置。 - 前記ターゲットホルダと一体にまたは別個に設けられた、前記スパッタリングターゲットをスパッタするためのカソードユニットをさらに備えることを特徴とする請求項8に記載のスパッタリング装置。
- 前記カソードユニット及び前記スパッタリングターゲットは前記基板ホルダの回転軸周りに複数個配置され、
個々のカソードユニットに順次または交互に電圧を印加することによって、前記基板上に積層膜を成膜することを特徴とする請求項26に記載のスパッタリング装置。 - 前記カソードユニットは、多角柱構造のカソードユニットであり、該多角柱のカソードユニットの側面の各々にはスパッタリングターゲットが配置可能であり、
前記多角柱構造のカソードユニットを順次または交互に回転することによって、前記基板上に積層膜を成膜することを特徴とする請求項26に記載のスパッタリング装置。 - 前記カソードユニットは、多角柱構造のターゲットホルダであり、該多角柱構造のターゲットホルダの側面の各々にはターゲットが配置可能であり、
前記スパッタリングターゲットにイオンビームを照射するためのイオンビーム源が、前記多角柱構造のターゲットホルダの斜向かい、かつ前記基板ホルダとは別個の位置に配置されており、
前記多角柱構造のターゲットホルダを順次または交互に回転することによって、前記基板上に積層膜を成膜することを特徴とする請求項26に記載のスパッタリング装置。 - 前記カソードユニット及び前記スパッタリングターゲットは前記基板ホルダの回転軸周りに複数個配置され、
個々のカソードユニットに順次または交互に電圧を印加することによって、前記基板上に積層膜を成膜することを特徴とする請求項15に記載のスパッタリング装置。 - 前記カソードユニットは、多角柱構造のカソードユニットであり、該多角柱のカソードユニットの側面の各々にはスパッタリングターゲットが配置可能であり、
前記多角柱構造のカソードユニットを順次または交互に回転することによって、前記基板上に積層膜を成膜することを特徴とする請求項15に記載のスパッタリング装置。 - 前記カソードユニットは、多角柱構造のターゲットホルダであり、該多角柱構造のターゲットホルダの側面の各々にはターゲットが配置可能であり、
前記スパッタリングターゲットにイオンビームを照射するためのイオンビーム源が、前記多角柱構造のターゲットホルダの斜向かい、かつ前記基板ホルダとは別個の位置に配置されており、
前記多角柱構造のターゲットホルダを順次または交互に回転することによって、前記基板上に積層膜を成膜することを特徴とする請求項15に記載のスパッタリング装置。 - スパッタリングによる成膜方法であって、
回転可能な基板ホルダ上に、少なくとも1つの凹凸構造が形成された基板を配置する工程と、
前記基板を回転しながら、前記基板の斜向かいの位置に配置されたスパッタリングターゲットをスパッタして、前記凹凸構造の被処理面上に膜を形成する工程とを有し、
前記形成する工程は、前記基板上の前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際には前記被処理面となる側面への成膜量が相対的に多くなり、かつ前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際には前記被処理面となる側面への成膜量が相対的に少なくなるように、前記膜を形成することを特徴とする成膜方法。 - スパッタリングによる成膜方法であって、
回転可能な基板ホルダ上に、少なくとも1つの凹凸構造が形成された基板を配置する工程と、
前記基板を回転しながら、前記基板の斜向かいの位置に配置されたスパッタリングターゲットをスパッタして、前記凹凸構造の被処理面上に膜を形成する工程とを有し、
前記形成する工程は、
前記基板の回転位置を検出する工程と、
前記検出した回転位置に応じて、前記基板の回転速度を調整する工程とを有し、
前記調整する工程は、
前記基板上の前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記基板の回転速度が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記基板の回転速度よりも遅くなるように、前記基板の回転速度を制御することを特徴とする成膜方法。 - スパッタリングによる成膜方法であって、
回転可能な基板ホルダ上に、少なくとも1つの凹凸構造が形成された基板を配置する工程と、
前記基板を非連続的に回転しながら、前記基板の斜向かいの位置に配置されたスパッタリングターゲットをスパッタして、前記凹凸構造の被処理面上に膜を形成する工程とを有し、
前記形成する工程は、
前記基板の回転位置を検出する工程と、
前記検出した回転位置に応じて、前記基板の回転停止時間を調整する工程とを有し、
前記調整する工程は、
前記基板上の前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記基板の回転停止時間が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記基板の回転停止時間よりも長くなるように、前記基板の回転停止時間を制御することを特徴とする成膜方法。 - スパッタリングによる成膜方法であって、
回転可能な基板ホルダ上に、少なくとも1つの凹凸構造が形成された基板を配置する工程と、
前記基板を回転しながら、カソードユニットに電力を供給することでプラズマを発生させ、前記基板の斜め向かいの位置に配置されたスパッタリングターゲットをスパッタして、前記凹凸構造の被処理面上に膜を形成する工程とを有し、
前記形成する工程は、
前記基板の回転位置を検出する工程と、
前記検出した回転位置に応じて、前記電力を調整する工程とを有し、
前記調整する工程は、
前記基板上の前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記カソードユニットに供給される電力が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記カソードユニットに供給される電力よりも大きくなるように、前記カソードユニットへの供給電力を調整することを特徴とする成膜方法。 - 基板を回転可能に保持するための基板ホルダと、
前記基板ホルダの斜向かいの位置に配置された、少なくとも1つのスパッタリングターゲットを支持するためのターゲットホルダと、
前記基板ホルダ上に保持された基板の回転位置を検出するための位置検出手段と、
前記基板ホルダの回転を制御する回転駆動手段とを備えたスパッタリング装置を制御するための制御装置であって、
前記位置検出手段から前記回転位置に関する情報を取得する手段と、
前記基板ホルダに少なくとも1つの凹凸構造が形成された基板が配置された際、前記取得された回転位置に関する情報に応じて、前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記基板の回転速度が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記基板の回転速度よりも遅くなるように、前記回転駆動手段を制御するための制御信号を生成する手段と、
前記生成された制御信号を前記回転駆動手段に送信する手段と
を備えることを特徴とする制御装置。 - 基板を非連続的に回転可能に保持するための基板ホルダと、
前記基板ホルダの斜向かいの位置に配置された、少なくとも1つのスパッタリングターゲットを支持するためのターゲットホルダと、
前記基板ホルダ上に保持された基板の回転位置を検出するための位置検出手段と、
前記位置検出手段の検出した回転位置に応じて、前記基板の回転停止時間を調整する回転駆動手段とを備えたスパッタリング装置を制御するための制御装置であって、
前記位置検出手段から前記回転位置に関する情報を取得する手段と、
前記基板ホルダに少なくとも1つの凹凸構造が形成された基板が配置された際、前記取得された回転位置に関する情報に応じて、前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象のスパッタリングターゲットが位置する際の前記基板の回転停止時間が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象のスパッタリングターゲットが位置する際の前記基板の回転停止時間よりも長くなるように、前記基板の回転停止時間を制御するための制御信号を生成する手段と、
前記生成された制御信号を前記回転駆動手段に送信する手段と
を備えることを特徴とする制御装置。 - 基板を回転可能に保持するための基板ホルダと、
前記基板ホルダの斜向かいの位置に配置された、少なくとも1つのスパッタリングターゲットを支持するためのターゲットホルダと、
前記基板ホルダ上に保持された基板の回転位置を検出するための位置検出手段と、
前記カソードユニットへ供給電力を供給する電力供給源とを備えたスパッタリング装置を制御するための制御装置であって、
前記スパッタリング装置から前記回転位置に関する情報を取得する手段と、
前記基板ホルダに少なくとも1つの凹凸構造が形成された基板が配置された際、前記取得された回転位置に関する情報に応じて、前記凹凸構造の被処理面となる側面に平行であり且つ前記基板の面内方向に平行である第1の方向側に成膜対象の前記スパッタリングターゲットが位置する際の前記カソードユニットへの供給電力が、前記第1の方向と垂直であり且つ前記基板面内に平行である第2の方向側に前記成膜対象の前記スパッタリングターゲットが位置する際の前記カソードユニットへの供給電力よりも大きくなるように、前記カソードユニットへの供給電力を制御するための制御信号を生成する手段と、
前記生成された制御信号を前記電力供給源に送信する手段と
を備えることを特徴とする制御装置。 - コンピュータを請求項37に記載の制御装置として機能させることを特徴とするコンピュータプログラム。
- コンピュータにより読み出し可能なプログラムを格納した記憶媒体であって、請求項40に記載のコンピュータプログラムを格納したことを特徴とする記憶媒体。
- コンピュータを請求項38に記載の制御装置として機能させることを特徴とするコンピュータプログラム。
- コンピュータにより読み出し可能なプログラムを格納した記憶媒体であって、請求項42に記載のコンピュータプログラムを格納したことを特徴とする記憶媒体。
- コンピュータを請求項39に記載の制御装置として機能させることを特徴とするコンピュータプログラム。
- コンピュータにより読み出し可能なプログラムを格納した記憶媒体であって、請求項44に記載のコンピュータプログラムを格納したことを特徴とする記憶媒体。
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KR20150048901A (ko) | 2015-05-07 |
KR102083955B1 (ko) | 2020-03-03 |
US9991102B2 (en) | 2018-06-05 |
US20130105298A1 (en) | 2013-05-02 |
US20180254172A1 (en) | 2018-09-06 |
KR20170064005A (ko) | 2017-06-08 |
JP2015155577A (ja) | 2015-08-27 |
EP2586889A1 (en) | 2013-05-01 |
CN103080367B (zh) | 2015-09-02 |
KR20130059384A (ko) | 2013-06-05 |
JPWO2011162036A1 (ja) | 2013-08-19 |
US10636634B2 (en) | 2020-04-28 |
CN103080367A (zh) | 2013-05-01 |
CN105088154B (zh) | 2018-05-18 |
JP5792723B2 (ja) | 2015-10-14 |
US20160079045A1 (en) | 2016-03-17 |
JP5952464B2 (ja) | 2016-07-13 |
EP2586889A4 (en) | 2016-01-20 |
CN105088154A (zh) | 2015-11-25 |
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