WO2011152682A2 - Couche conductrice transparente, cible pour couche conductrice transparente et procédé de production de la cible pour couche conductrice transparente - Google Patents

Couche conductrice transparente, cible pour couche conductrice transparente et procédé de production de la cible pour couche conductrice transparente Download PDF

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Publication number
WO2011152682A2
WO2011152682A2 PCT/KR2011/004081 KR2011004081W WO2011152682A2 WO 2011152682 A2 WO2011152682 A2 WO 2011152682A2 KR 2011004081 W KR2011004081 W KR 2011004081W WO 2011152682 A2 WO2011152682 A2 WO 2011152682A2
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Prior art keywords
transparent conductive
conductive film
target
compounds
oxide
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PCT/KR2011/004081
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English (en)
Korean (ko)
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WO2011152682A3 (fr
Inventor
박장우
김상희
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주식회사 나노신소재
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Priority to JP2013513116A priority Critical patent/JP2013533378A/ja
Priority to CN2011800276567A priority patent/CN103038834A/zh
Publication of WO2011152682A2 publication Critical patent/WO2011152682A2/fr
Publication of WO2011152682A3 publication Critical patent/WO2011152682A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Definitions

  • the present invention relates to a method for manufacturing a transparent conductive film, a target for transparent conductive film, and a target for transparent conductive film.
  • Transparent conductive films are transparent electrodes, automotive windows, heat reflecting films for construction, anti-static films, or anti-fogging transparent heating elements used in freezer show cases. Also widely used.
  • the transparent electrode requires a high light transmittance and electrical conductivity.
  • the transparent electrode may have a light transmittance of 85% or more and a resistivity of 1 ⁇ ⁇ 3 ⁇ ⁇ ⁇ or less in the visible light region.
  • Transparent electrodes satisfying the above conditions are suitable for solar cells, liquid crystal displays, organic light emitting display devices, inorganic light emitting display devices, touch panels and the like.
  • the transparent conductive film a tin oxide (Sn0 2 ) based thin film, a zinc oxide (ZnO) based thin film or an indium oxide (In 2 0 3 ) based thin film is known.
  • the tin oxide-based thin film includes an antimony tin oxide (AT0) thin film containing antimony as a dopant, or a bloso tin oxide (FT0) thin film containing fluorine as a dopant.
  • the zinc oxide thin film may be an aluminum zinc oxide (AZ0) thin film containing aluminum as a dopant or a gallium zinc oxide (GZ0) thin film containing galliumol as a dopant.
  • the indium oxide thin film may be an indium tin oxide thin film (ITO) thin film or an indium zinc oxide thin film (IZ0).
  • ITO indium tin oxide thin film
  • IZ0 indium zinc oxide thin film
  • the transparent conductive film is mainly manufactured by sputtering or ion plasma.
  • the sputtering method is effective in the case where it is necessary to precisely control the film formation and the film thickness of a material having low vapor pressure, and is widely used because the operation is very simple and convenient.
  • the said sputtering method uses the target which is a raw material of a thin film.
  • the target is formed as a solid containing a metal element forming a thin film to form a thin film.
  • Sintered bodies such as metals, metal oxides, metal nitrides, and metal carbides are used in the production of the target, or in some cases, single crystals are used.
  • the sputtering method generally uses an apparatus having a vacuum chamber capable of placing a substrate and a target therein.
  • a vacuum chamber capable of placing a substrate and a target therein.
  • an inert gas such as argon is injected into the vacuum chamber and controlled at a gas pressure of approximately 10 Pa or less.
  • the anode is used as the base material and the target is used as the cathode. Allow the argon plasma to be generated.
  • the argon cations in the argon plasma stratify the target, which is the cathode, and the target constituent particles bounced off by collision are deposited on the substrate to form a transparent conductive film.
  • the IT0 thin film one of the typical transparent conductive films, requires a crystallization process to lower the specific resistance value.
  • the ⁇ thin film it is crystallized by heat treatment after deposition on a substrate such as glass or plastic.
  • a change in the resistivity due to the process temperature affects the device characteristics.
  • An object of the present invention is to provide a transparent conductive film that is crystallized even in a low temperature heat treatment process.
  • An object of the present invention is to provide a transparent conductive film having low resistance at low temperature and having excellent electrical conductivity.
  • An object of the present invention is to provide a transparent conductive film having a stable specific resistance at various process temperatures and excellent thermal stability.
  • An object of the present invention is to provide a target for a transparent conductive film having a dense structure.
  • An object of the present invention is to provide a method for producing a target for a transparent conductive film that can be formed by the coprecipitation method ultra-fine synthetic powder having a uniform particle size distribution of 50nm or less.
  • An object of the present invention is to provide a method for producing a target for a transparent conductive film which can produce a high-density target because the ultra-fine synthetic powder has a high sintering driving force.
  • the present invention relates to a total weight of the transparent conductive film, 0.01-10 weight 3 ⁇ 4 »additive comprising one or two or more selected from the group consisting of tantalum compounds, niobium compounds and vanadium compounds; And it provides a transparent conductive film comprising 90-99.99% by weight of rhythm tin oxide (().
  • the present invention is an additive containing 0.01 to 10% by weight of one or two or more selected from the group consisting of tantalum compounds, niobium compounds and vanadium compounds with respect to the target total weight for the transparent conductive film; And it provides a target for a transparent conductive film comprising indium tin oxide (IT0) 90-99.99% by weight.
  • the present invention comprises the steps of preparing a solution comprising an indium precursor and a tin precursor; Adding an alkali compound to the solution to form IT0; Mixing an ITO with an additive including at least one selected from the group consisting of a tantalum compound, a niobium compound, and a vanadium compound to form a molded article; And it provides a method for producing a target for the transparent conductive film comprising the step of sintering the molded body to produce a sputtering target.
  • the transparent conductive film according to the present invention is crystallized even in a low temperature heat treatment process.
  • the transparent conductive film according to the present invention has a low resistance at low temperature, and the electrical conductivity is remarkably excellent.
  • the transparent conductive film according to the present invention at various process temperatures It has a stable specific resistance value, which makes it possible to realize excellent thermal stability.
  • a transparent conductive film having a more compact structure can be manufactured.
  • an ultrafine synthetic powder having a uniform particle size distribution of 50 nm or less may be formed by a coprecipitation method.
  • the ultra fine synthetic powder may have a high sintering driving force to produce a high density target having excellent densification.
  • Example 1 is a graph showing the results of measuring sheet resistance values according to the heat treatment temperatures of the thin films of Examples 1 to 3 and Comparative Example 1 of the present invention.
  • FIG. 2 is a graph showing XRD before (a) and after (b) the heat treatment of Comparative Example 1.
  • Figure 3 is a graph showing the XRD before (a), after the heat treatment (b) ta nl-o] heat treatment of Example ⁇ 11.
  • rr 4 is a graph showing XRD before (a) and after (b) the heat treatment of Example 3.
  • Figure 5 is a photograph showing the SEM before (a), after the heat treatment (a) before the aa heat treatment of Comparative Example 1
  • Figure 7 shows an SEM of the embodiment ⁇ ⁇ ⁇ before heat treatment of 13 (a), after the heat treatment (b).
  • Transparent conductive film of the present invention 0.01 to 10% by weight of an additive containing one or two or more selected from the group consisting of tantalum compounds, niobium compounds and vanadium compounds relative to the total weight of the transparent conductive film; And 90-99.99% by weight of indium tin oxide (IT0).
  • an additive containing one or two or more selected from the group consisting of tantalum compounds, niobium compounds and vanadium compounds relative to the total weight of the transparent conductive film; And 90-99.99% by weight of indium tin oxide (IT0).
  • the additive when the additive is included in the above-described range, since the ion radius of Group 5 elements such as tantalum, niobium, and vanadium is about 15 to 30% smaller than the indium ion radius, the solid solution between the mixtures of the thin film can be made more efficiently. . Therefore, the transparent conductive film may be crystallized even at a low temperature heat treatment process of 150 ° C. or less, and thermal stability may be improved. Then, it is possible to form a thin film having a specific resistance value equivalent to the specific resistance value of the obtained transparent conductive film at a temperature of 200 ° C or more.
  • the additive is included in the above-mentioned range, crystallization may not occur at low temperatures and the specific resistance may not be lowered. If the additive is included in excess of the above-mentioned range, ionized tantalum, niobium, vanadium, or the like causes scattering on the tin oxide tin (IT0), resulting in high carrier concentration. Thus, a problem arises in that the mobility of the electrons is reduced and the resistance is increased.
  • the additive is preferably an oxide, more preferably at least one selected from the group consisting of tantalum oxide, niobium oxide and vanadium oxide.
  • a transparent conductive film of the present invention is preferably a transmittance of 85% ⁇ 100%, and preferably in the resistivity of 5x10- 5 ⁇ 1 ⁇ 10- 3 ⁇ ⁇ ⁇ . This is because it is a suitable condition that can be used as a transparent electrode of a flat panel display device.
  • the flat panel display device is not particularly limited as long as the transparent conductive film of the present invention can be used as a transparent electrode.
  • a liquid crystal display device (LCD), a plasma display panel (PDP), an organic light emitting display device (0LED), TOUCH SCREEN etc. can be mentioned.
  • the transparent conductive film according to the present invention is crystallized even in a low temperature heat treatment process.
  • the transparent conductive film according to the present invention has a low resistance at low temperature, and the electrical conductivity is remarkably excellent.
  • the transparent conductive film according to the present invention has a stable specific resistance value at various process temperatures, thereby realizing excellent thermal stability.
  • the target for a transparent conductive film of the present invention is 0.01-10% by weight of an additive containing at least one selected from the group consisting of tantalum compounds, niobium compounds, and vanadium compounds, and indium tin oxide, based on the total weight of the target for transparent conductive films. ( ⁇ ) 90-99.99% by weight.
  • the target for the transparent conductive film containing the additive in the above-described range since the ion radius of Group 5 elements such as tantalum, niobium, and barnacle is about 15 to 30% smaller than the knot ion radius, solid solution between the target mixtures Make painting more efficient. Therefore, when the thin film is made of the target, the transparent conductive film may be crystallized even at a low temperature heat treatment process of 150 ° C or less, and thermal stability may be improved. And, it is possible to form a thin film having a specific resistance value of the level equivalent to the specific resistance value of 200 ° C or more and temperature.
  • the transparent conductive film produced thereby cannot crystallize at low temperature and can not lower the specific resistance value.
  • ionized tantalum, niobium, vanadium, etc. causes scattering on indium tin oxide ( ⁇ ) to cause high carrier concentration. do. Therefore, there is a problem that the mobility of the electrons of the transparent conductive film manufactured thereby is reduced and the resistance is increased.
  • the additive is preferably an oxide, more preferably at least one selected from the group consisting of tantalum oxide, niobium oxide, and vanadium oxide.
  • a transparent conductive film having a more compact structure can be manufactured.
  • Method for producing a target for a transparent conductive film of the present invention comprises the step of preparing a solution containing an indium precursor and a tin precursor.
  • the indium precursor and tin precursor is not particularly limited as long as it is used in the technical field of the present invention, but is preferably a metal alkoxide precursor.
  • the indium precursor and the tin precursor may include, for example, indium nitrate, indium chloride, tin chloride or tin sulfide.
  • pH of the said solution is 1-4. In the case of exceeding the above-mentioned range, problems may occur in the reaction rate of the solution.
  • the pH regulator can be added and stirred for 5 to 20 hours at 30 ⁇ 80 ° C.
  • Ultrapure water or weak alkali may be used as the pH adjusting agent, and in some cases, a weak acid may be used.
  • Method for producing a target for a transparent conductive film of the present invention includes the step of forming an IT0 by adding an alkali compound to the solution.
  • the step of forming the ITO by adding an alkali compound to the solution the step of adding an alkali compound to the solution; Reacting the solution to which the alkali compound is added at 10-80 ° C. for 15-25 hours to form a precipitate; And heat-treating the precipitate at 500-800 ° C. for 1.5-2.5 hours to form ITO.
  • pH of the solution to which the said alkali compound was added is 7-10.
  • temperature of the solution to which the alkali compound is added it is preferable to maintain the temperature at 10-80 ° C.
  • the reaction time becomes longer if it is kept below the above-mentioned temperature. And, if it is maintained above the above-mentioned temperature, it is difficult to produce a fine synthetic powder of 50nm or less by causing the growth of particles.
  • the alkali compound is not particularly limited as long as it is used in the technical field of the present invention, and examples thereof include NH 4 0H.
  • the average particle diameter of the said precipitate is 10-50 nm. If the above range is satisfied, processing is advantageous in a later step.
  • the precipitate can be obtained through filtration separation, washed and dried.
  • Filtration separation of the precipitate may be performed using a filter press or a centrifuge.
  • the washing of the precipitate may be performed using ultrapure water or alcohol.
  • Drying of the precipitate may be performed by a method such as hot air drying.
  • the temperature is preferably 80 ⁇ 200 ° C.
  • the precipitate When the precipitate is heat-treated at 500 ⁇ 800 ° C, residual water and chemically bound salts present in the precipitate are decomposed and removed. If the heat treatment is less than the above range, the volatilization of salts that are chemically bound does not occur completely. If the heat treatment exceeds the above-mentioned range, the particles are sintered (growth of particles), which is not preferable. If the particles are sintered, it is difficult to produce a sintered compact having a dense structure by increasing the driving force for the purpose of the present invention, which is difficult to grind as a subsequent process. It is preferable that the average particle diameter of said (pi) is 1.0-10.0, and the specific surface area is 10-30 mVg.
  • the average particle diameter is larger than the above-mentioned range and the specific surface area is smaller than the above-mentioned range, it is difficult to form a dense structure with a high density. If the average particle diameter is smaller than the above-mentioned range and the specific surface area is larger than the above-mentioned range, there is a risk of cracking during molding, and an increase in internal residual stress and residual crack may occur due to excessive shrinkage during sintering.
  • Method for producing a target for manufacturing a transparent conductive film of the present invention comprises the step of mixing the additives containing one or two or more selected from the group consisting of tantalum compounds, niobium compounds and vanadium compounds in the ITO to form a molded article.
  • the step of forming a molded body by mixing one or two or more kinds of additives selected from the group consisting of tantalum compounds, niobium compounds and vanadium compounds in ⁇ 0, the tantalum compounds, niobium in the ITO Mixing one or two or more additives selected from the group consisting of a compound and a vanadium compound to form a system 1 complex; Mixing a polyvinyl alcohol with the giant U mixture to form a second mixture; Wet ball milling the Crab 2 mixture to form a slurry; And pressurizing the slurry to form a molded body.
  • the additive is preferably an oxide, more preferably one or two or more selected from the group consisting of tantalum oxide, niobium oxide and vanadium oxide.
  • the polyvinyl alcohol is a material that serves to increase the molding density and the sintered density during target molding, and is coated on the surface of the first mixture, that is, the surface of ⁇ 0.
  • the second mixture may include water as a medium.
  • the slurry may be prepared in powder form by spray drying before pressing.
  • the method for producing a target for manufacturing a transparent conductive film of the present invention includes the step of sintering the molded body to produce a sputtering target.
  • the step of manufacturing the sputtering target by sintering the molded body is preferably a step of preparing the sputtering target by sintering the molded body at 1,250 to 1600 ° C for 10 to 20 hours. And, upon sintering, is raised to the temperature of the sintering furnace at a rate of 1.0 ⁇ 1.5 ° C / min is more preferable to set the temperature range eu addition, the interior volume 1.0m oxygen of 200 to 100 (per 3 in the sintered It is more preferable to advance in an atmosphere.
  • the sintered body may be manufactured as a sputtering target through a grinding and cutting process.
  • the temperature is raised to 90 CTC by using an atmospheric atmosphere or high-purity air, and then the oxygen concentration in the atmosphere using oxygen gas in the atmosphere inside the furnace chamber at 1,000 ° C or more at which shrinkage behavior occurs. It is preferable to carry out by keeping it high.
  • a cooling process may be further performed after sintering.
  • the manufacturing method of the target for transparent conductive films of this invention by the coprecipitation method,
  • the ultra fine synthetic powder having a uniform particle size distribution of 50 nm or less can be formed.
  • the ultra fine synthetic powder may have a high sintering driving force to produce a high density target having excellent densification.
  • the actual numerical range corresponding to the relative density measured by the Archimedes method that is, the density of 98% or more.
  • the density is measured using the Archimedes principle. It is possible to prepare an IT0 target of 7.007g / cuf (15X98%), which is 983 ⁇ 4 of 7.15 / ⁇ .
  • phase separation by high temperature does not occur, so that no cracks or nodules are generated during sputtering, and a uniform conductive film can be formed.
  • a target having a surface specific resistance of 1 ⁇ 10 ⁇ -cm or less, preferably 5 ⁇ 10 “4 ⁇ ⁇ cm or less while being thermally and chemically stable and having excellent electrical conductivity can be prepared.
  • an ultrafine synthetic powder having a uniform particle size distribution of 50 nm or less may be formed by a coprecipitation method.
  • the ultra fine synthetic powder may have a high sintering driving force to produce a high density target having excellent densification.
  • a step of forming a transparent conductive film using a sputtering apparatus equipped with a target for a transparent conductive film of the present invention will be described below.
  • the gas concentration and the deposition pressure may be adjusted to prepare a transparent conductive film.
  • the prepared transparent conductive film may be heat treated at a temperature of 300 ° C. or less under oxygen, nitrogen, vacuum, or air atmosphere.
  • the heat treatment is performed for 1 to 5 hours at a temperature of 50 to 25CTC.
  • the transparent conductive film manufactured as described above has thermal stability, it may be used for transparent electronic devices, and also, a liquid crystal display (LCD), a plasma display panel (PDP), an organic light emitting display (0LED), and a touch screen. It can be used for a flat panel display device such as TOUCH SCREEN or a surface light source lighting device.
  • LCD liquid crystal display
  • PDP plasma display panel
  • LED organic light emitting display
  • touch screen a touch screen.
  • a flat panel display device such as TOUCH SCREEN or a surface light source lighting device.
  • the average particle diameter of the slurry was 0.5-1.0, the average particle diameter of more than 90% of the powder was 1.0 / mi or less.
  • the slurry was spray dried to obtain 50 to 80 spherical powders.
  • the spherical powder was made into a shaped body by applying a pressure of 2.5 ton / ciif using CIP. Thereafter, the molded body was put into an electric furnace, and then heated to 1,550 ° C. at a temperature rising rate of 1.2 ° C./min, and then sintered for 12 hours to prepare a sintered body. At this time, the electric furnace was supplied with an oxygen atmosphere of 40 (H oxygen per inner volume lm 3.
  • the sintered body was manufactured as a sputtering target through a grinding and cutting process.
  • the sputtering target mounted in the RF magnetron sputtering, and the initial degree of vacuum within the chamber in the 1X10- was adjusted to 6 Torr or less ambient temperature to a thickness of lOOran depositing In-Sn-Ta-0-based thin film on the glass substrate It was.
  • Example 1 In Example 1, only 5 g of tantalum oxide was added to 995 g of ⁇ , and all others were the same as in Example 1 to obtain a sputtering target.
  • the density and surface resistivity of the sputtering target are shown in Table 3 below.
  • the sputtering target was mounted on an RF magnetron sputter, and the initial vacuum in the chamber was adjusted to 1 ⁇ 10 ⁇ 6 Torr or less. Thereafter, an In—Sn—Ta-0 based thin film was deposited on the glass substrate at a thickness of 100 nm at ambient temperature.
  • Example 1 In Example 1, only 2g of niobium oxide was added to 998 g of ⁇ 0, and the remainder was the same as in Example 1 to obtain a sputtering target.
  • the density and surface resistivity of the sputtering target are shown in Table 4 below. Table 4 Density surface resistivity
  • the sputtering target was mounted on an RF magnetron sputter, and the initial vacuum in the chamber was adjusted to lxlCT ⁇ orr or less, and an In-Sn-Nb-0-based thin film was deposited on the glass substrate at a thickness of 100 nm at ambient temperature. .
  • Example 1 except that ITO was 100 g and no tantalum oxide was added, the remainder was the same as in Example 1 to obtain a sputtering target.
  • the density and surface resistivity of the sputtering target are shown in Table 5 below.
  • the sputtering target was mounted on an RF magnetron sputter, and the initial vacuum in the chamber was adjusted to 1 ⁇ 10 ⁇ 6 Torr or less, and then an In—Sn-0 based thin film was deposited on the glass substrate at a thickness of 100 nm at ambient temperature.
  • Example 1 In Example 1, only 12 g of tantalum oxide was added to 988 g of ⁇ , and all others were the same as in Example 1 to obtain a sputtering target.
  • the relative density of 90% of the theoretical density was shown, and the surface resistivity is shown in Table 6 below.
  • the sheet resistance values of the thin films of Examples 1 to 3 and Comparative Example 1 were measured. And, after heat treatment for 2 hours at 180 ° C, 250 ° C, 350 ° C in the air atmosphere of the thin film of Examples 1 to 3 and Comparative Example 1, the sheet resistance value was measured.
  • Example 1 is a graph showing the result of measuring sheet resistance values according to heat treatment temperature and before heat treatment of the thin films of Examples 1 to 3 and Comparative Example 1 of the present invention.
  • the thin film of Examples 1 to 3 had a smaller change in sheet resistance with temperature than the thin film of Comparative Example 1. And, even if the heat treatment at a relatively low temperature of 180 ° C, it can be seen that the sheet resistance value is excellent. And it can be seen that the thin film of Examples 1 to 3 according to the present invention is superior to Comparative Example 1 (A-depo on the X-axis) even without heat treatment.
  • the crystallization degree of the thin film of Example 1, Example 3, and the comparative example 1 was measured. Then, after heat treatment at 180 ° C for 2 hours in the air atmosphere of the thin film of Example 1, Example 3 and Comparative Example 1, the degree of crystallization was measured.
  • FIG. 2 is a graph showing XRD before and after heat treatment of the thin film of Comparative Example 1.
  • FIG. 3 is a graph showing XRD before (a) and after (b) the heat treatment of the thin film of Example 1.
  • FIG. 4 is a graph showing XRD before (a) and after (b) the heat treatment of the thin film of Example 3.
  • FIG. 5 is a photograph showing SEM before (a) and after (b) heat treatment of the thin film of Comparative Example 1.
  • FIG. Figure 6 shows the SEM before (a), after the heat treatment (b) of the thin film of Example 1.
  • Figure 7 shows the SEM before (a), after the heat treatment (b) of the thin film of Example 3.

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Abstract

La présente invention a pour objet une couche conductrice transparente, qui comprend, sur la base d'un poids total de la couche conductrice transparente, de 0,01 à environ 10 % en poids d'un additif comprenant un composé ayant au moins un ou deux éléments choisis dans le groupe comprenant le tantale, le niobium et le vanadium ; et de 90 à environ 99,99 % en poids d'un oxyde d'indium et d'étain (ITO).
PCT/KR2011/004081 2010-06-04 2011-06-03 Couche conductrice transparente, cible pour couche conductrice transparente et procédé de production de la cible pour couche conductrice transparente WO2011152682A2 (fr)

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JP2013513116A JP2013533378A (ja) 2010-06-04 2011-06-03 透明導電膜、透明導電膜用ターゲット及び透明導電膜用ターゲットの製造方法
CN2011800276567A CN103038834A (zh) 2010-06-04 2011-06-03 透明导电膜、透明导电膜用靶及透明导电膜用靶的制造方法

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KR10-2010-0052772 2010-06-04

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WO2011152682A3 WO2011152682A3 (fr) 2012-05-03

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