WO2011142154A1 - レーザアニール処理装置、レーザアニール処理体の製造方法およびレーザアニール処理プログラム - Google Patents
レーザアニール処理装置、レーザアニール処理体の製造方法およびレーザアニール処理プログラム Download PDFInfo
- Publication number
- WO2011142154A1 WO2011142154A1 PCT/JP2011/053031 JP2011053031W WO2011142154A1 WO 2011142154 A1 WO2011142154 A1 WO 2011142154A1 JP 2011053031 W JP2011053031 W JP 2011053031W WO 2011142154 A1 WO2011142154 A1 WO 2011142154A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- pulse laser
- output
- value
- control
- Prior art date
Links
- 238000005224 laser annealing Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000005284 excitation Effects 0.000 claims abstract description 72
- 230000006866 deterioration Effects 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 238000005259 measurement Methods 0.000 claims description 26
- 238000002834 transmittance Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000284 extract Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Definitions
- the present invention relates to a laser annealing apparatus that performs laser annealing by irradiating a target object with pulsed laser light, a method for manufacturing a laser annealing object, and a laser annealing program.
- a thin film transistor used for a pixel switch or a drive circuit of a liquid crystal display or an organic EL (Electro-Luminescence) display laser annealing using laser light is performed as a part of a manufacturing method of a low temperature process.
- a non-single crystal semiconductor film formed on a substrate is irradiated with a laser beam and locally heated and melted, and then the semiconductor thin film is crystallized into a polycrystal or a single crystal in the cooling process. . Since the crystallized semiconductor thin film has high carrier mobility, the performance of the thin film transistor can be improved.
- the laser output is controlled to be constant so that the irradiated laser light has a stable irradiation energy.
- the laser beam is controlled to make the pulse energy constant.
- the excimer gas laser that is widely used in the above-described method oscillates laser light by exciting a gas by a discharge method.
- a high-power excimer gas laser a plurality of discharges are generated due to a residual voltage after the first discharge due to a high voltage, and as a result, a laser beam having a plurality of peaks is generated.
- the second and subsequent peaks may have different characteristics from the first peak.
- a pulse laser oscillation device has been proposed in which a ratio between a plurality of local maximum values in a pulse waveform of a pulse laser beam is obtained, and the characteristics of crystallized silicon are kept constant by using a laser beam having this ratio in a predetermined range. (See Patent Document 1).
- the time-varying waveform of the pulse laser beam includes two or more peak groups, and the peak value of the pulse laser beam of the second peak group is the peak value of the pulse laser beam of the first peak group. On the other hand, it is set to be within the range of 0.37 to 0.47.
- the angle of the resonator mirror disposed in the vicinity of the pulse laser apparatus is changed so that the waveform ratio of each peak group can be adjusted.
- the output changes depending on the discharge voltage applied to the oscillator, and the output tends to increase as the discharge voltage increases.
- the output of the pulse laser beam output from the gas excitation pulse laser oscillator is measured by an appropriate measuring unit such as a photodiode, and the output of the pulse laser beam becomes a target value based on the measurement result.
- feedback control for adjusting the discharge voltage is performed.
- the gas is likely to combine with other substances over time due to operation, and the gas deteriorates due to a decrease in gas concentration or a decrease in purity. Since the output energy decreases when the gas deteriorates, the laser device has a function of gas injection, and an excitation gas such as HCl gas is injected into the oscillator at a constant cycle. However, if this gas is not injected at a fixed period or if the gas injection does not sufficiently suppress the deterioration of the gas, the discharge voltage gradually increases by the feedback control in order to keep the output energy at the target value. .
- the waveform of the pulse laser beam to be output changes and the 2nd peak value relatively increases.
- the ratio between the 1st peak value and the 2nd peak value also increases.
- the inventors of the present invention tend to cause shot unevenness for each laser pulse, resulting in variations in the surface direction in the laser annealing process, for example, for crystallization of a semiconductor thin film. It has been elucidated that it will be an influential factor.
- the present invention has been made to solve the above-mentioned problems of the prior art, and is capable of irradiating a workpiece with a pulse laser beam having a stable pulse waveform regardless of gas deterioration over time. It is an object of the present invention to provide a laser annealing treatment apparatus capable of performing annealing, a laser annealing treatment program, and a laser annealing treatment body manufacturing method capable of obtaining a laser annealing treatment body excellent in characteristics.
- the laser annealing apparatus of the present invention includes a gas excitation pulse laser oscillator, a variable attenuator that transmits pulse laser light output from the gas excitation pulse laser oscillator at a predetermined attenuation rate, and a pulse laser that transmits the variable attenuator.
- An optical system that guides light to an object to be processed, and a control unit that performs first control to adjust an output value of the pulsed laser light in the gas-excited pulsed laser oscillator,
- the control unit reduces the output value adjusted by the first control according to the deterioration of the gas in the gas excitation pulse laser oscillator, and reduces the attenuation factor of the variable attenuator. It is characterized by performing.
- the method for manufacturing a laser annealed body of the present invention is a method for manufacturing a laser annealed body in which pulsed laser light output from a gas-excited pulse laser oscillator is transmitted through a variable attenuator with a predetermined attenuation rate and irradiated to a target object.
- First control is performed to adjust the output value of the pulse laser beam output from the gas excitation pulse laser oscillator to a predetermined value, the deterioration state of the gas in the gas excitation pulse laser oscillator is determined, and the determination result Accordingly, the output value adjusted by the first control is lowered, and second control is performed to reduce the attenuation factor of the variable attenuator.
- the laser annealing processing program of the present invention adjusts the output value of the pulse laser beam output from the gas excitation pulse laser oscillator to a predetermined value, and outputs the pulse output from the gas excitation pulse laser oscillator to the object to be processed.
- a program that operates in a controller that adjusts the transmittance of a variable attenuator that transmits laser light at a predetermined transmittance A first step of adjusting an output value of the pulse laser beam output from the gas excitation pulse laser oscillator to a predetermined value; a second step of determining a deterioration state of the gas in the gas excitation pulse laser oscillator; A third step of reducing a predetermined value of the output adjusted in the first step according to a determination result in the second step and reducing an attenuation factor of the variable attenuator.
- the first control for adjusting the output value of the pulse laser beam in the gas excitation pulse laser oscillator is executed from the initial state where the gas is not deteriorated.
- a target predetermined output value is set, and the output of the gas excitation pulse laser oscillator is adjusted so that the output becomes the predetermined output value.
- the adjustment is usually performed by adjusting the discharge voltage applied to the gas excitation pulse laser oscillator.
- the output of the pulse laser beam output from the gas excitation pulse laser oscillator is measured by an appropriate output value measuring unit such as a photodiode, and the output of the pulse laser beam is set to a target predetermined output value based on the measurement result.
- feedback control for adjusting the discharge voltage is performed.
- the configuration of the output value measuring unit is not particularly limited as long as the output level of the pulse laser beam can be measured.
- the attenuation factor of the variable attenuator is set corresponding to the output of the gas excitation pulse laser oscillator.
- the attenuation rate can be determined so that the integral value of the pulse energy applied to the object to be processed becomes a predetermined value.
- the present invention is not limited to this.
- the attenuation rate may be determined so as to keep the maximum value of one pulse of the pulsed laser light constant.
- the output value adjusted by the first control is lowered, and the second control for reducing the attenuation factor of the variable attenuator is performed.
- the second control is performed according to the deterioration of the gas, and can be executed when the deterioration of the gas reaches a predetermined state.
- a predetermined state As the predetermined state at this time, two or more conditions may be set in addition to one condition, and the second control may be performed step by step.
- the output value adjusted by the first control is continuously or stepwise adjusted by the second control as the gas deterioration progresses. It is possible to reduce the attenuation factor of the variable attenuator.
- the second control it is possible to prevent crystallization of the semiconductor thin film, etc., by preventing the pulse waveform from changing greatly and making the laser annealing process non-uniform. Note that when the output value adjusted in the first control is lowered to a predetermined lower limit value by the second control or when the attenuation factor of the variable attenuator is reduced to a predetermined lower limit value, it is time to replace the gas. May be determined.
- Gas degradation can be determined by various information. For example, the correlation between the operation time of the gas excitation pulse laser oscillator and the gas deterioration can be obtained in advance, and the gas deterioration can be determined based on the correlation based on the actual operation time.
- the second control can be performed by setting a time threshold value of 1 or 2 or more for the operation time and exceeding the time threshold for the actual operation time.
- the operation time can be managed by a control unit that controls the gas excitation pulse laser oscillator.
- gas deterioration can be determined by a change in discharge voltage of the gas excitation pulse laser oscillator.
- the discharge voltage increases as the gas deteriorates.
- one or two or more voltage thresholds are provided for the discharge voltage, and the second control can be performed when the actual discharge voltage exceeds the voltage threshold.
- the discharge voltage is determined by a control unit that controls the gas excitation pulse laser oscillator, and is easy to grasp.
- the deterioration of the gas can be determined by the peak ratio P2 / P1 obtained from the first peak value P1 and the second peak value P2 in the pulse waveform irradiated to the object to be processed.
- the first peak value can be represented by the maximum height (first peak height) in the first peak group that appears first, and the second peak value appears after the first peak group. It can be represented by the maximum height (the height of the second peak) in the second peak group.
- a first peak group having a relatively large height appears first, and after passing through a minimum value (about a fraction of the maximum height) at which the intensity greatly decreases,
- a second peak group having a small height appears and has two peak groups.
- three or more peak groups may appear in one pulse.
- the second control can be performed when a peak ratio threshold value of 1 or 2 or more is provided for the peak ratio and the actual peak ratio exceeds the peak ratio threshold value.
- the peak ratio is determined by measuring the pulse waveform of the pulsed laser light applied to the object to be processed with an appropriate pulse waveform measuring unit, extracting the first peak and the second peak by image analysis, and the like. The above peak ratio can be calculated from the size of. The calculation of the peak ratio can be performed by the control unit.
- the object to be processed can be irradiated with pulsed laser light whose peak ratio is suppressed to a predetermined value or less, and shot unevenness for each laser pulse can be reduced.
- the type of the object to be processed is not particularly limited, but can be suitably used for laser annealing for crystallizing an amorphous silicon thin film.
- the first control for adjusting the output value of the pulse laser beam output from the gas excitation pulse laser oscillator to a predetermined value is performed, and the gas in the gas excitation pulse laser oscillator is controlled. Since the second control for reducing the attenuation value of the variable attenuator is performed while reducing the output value adjusted in the first control according to the determination result, the deterioration state of the gas is deteriorated. The change in the pulse waveform accompanying the above is reduced, the shot unevenness for each pulse laser beam is reduced, and a uniform laser annealing process is enabled.
- FIG. 1 is a schematic diagram for explaining an excimer laser annealing apparatus 1 corresponding to the laser annealing apparatus of the present invention.
- a substrate 14 used in a flat panel display TFT device is a target, and an amorphous silicon thin film 14a is formed on the substrate 14 as an object to be processed.
- the amorphous silicon thin film 14a is formed on the upper layer of the substrate 14 by a conventional method.
- the method for forming the amorphous silicon thin film 14a is not particularly limited.
- the excimer laser annealing apparatus 1 includes a gas excitation pulse laser oscillator 11 that outputs a pulse laser beam having an emission wavelength of 308 nm and a pulse laser period of 300 Hz, and drives the gas excitation pulse laser oscillator 11.
- An output control unit 11a that generates a pulse signal is provided.
- the wavelength and period of the pulse laser beam output from the gas excitation pulse laser oscillator 11 are not limited to the above.
- the emission wavelength for example, a wavelength of 240 to 358 nm can be shown.
- the output control unit 11a includes a CPU, a program that operates the CPU, a ROM that stores the program, a RAM that is a work area, a flash memory that holds data in a nonvolatile manner, and the like.
- the nonvolatile memory stores operation parameters for generating a pulse signal for performing a predetermined output by the gas excitation pulse laser oscillator 11.
- the gas excitation pulse laser oscillator 11 is set to output pulsed laser light with a predetermined output pulse energy as an initial setting.
- the output pulse energy value is not limited to a specific value in the present invention, for example, 850 to 1050 mJ / pulse can be shown.
- a device control unit 17 that controls the entire excimer laser annealing apparatus 1 is connected to the output control unit 11a in a controllable manner. Based on a command from the device control unit 17, the output control unit 11a uses a gas excitation pulse laser oscillator. 11 is generated, and the discharge voltage in the gas excitation pulse laser oscillator 11 is determined at this time.
- the device control unit 17 includes a CPU, a program for operating the CPU, a ROM for storing the program, a RAM serving as a work area, a flash memory for holding data in a nonvolatile manner, and the ROM, RAM, flash memory, and the like. Is included in the device control unit 17 as a storage unit 17a.
- the apparatus control unit 17 and the output control unit 11a function together as the control unit 2 according to the present invention.
- the programs included in the output control unit 11a and the device control unit 17 include the laser annealing processing program of the present invention.
- the two device control units 17 and the output control unit 11a function as roles, but the number is particularly limited as the present invention. Instead, one control unit may fulfill the function of the control unit according to the present invention.
- the storage unit 17a has an operation parameter for obtaining a predetermined output by the gas excitation pulse laser oscillator 11, an operation parameter for setting a predetermined attenuation factor by the variable attenuator 12 described later, and an object to be processed.
- the target pulse energy density and the like in the pulsed laser beam irradiated on is stored, and the apparatus is controlled with reference to the stored data as the apparatus is operated.
- the storage unit 17a stores a peak ratio threshold value of a peak ratio, which will be described later.
- the amount of decrease in the discharge voltage with respect to the gas excitation pulse laser oscillator 11 adjusted when the peak ratio threshold value is exceeded, the attenuation of the variable attenuator.
- the amount of decrease in the rate is stored as control amount data. In this embodiment, description will be made assuming that one peak ratio threshold is set. However, two or more peak ratio thresholds may be set, and the control amount may be determined according to each threshold. .
- the gas excitation pulse laser oscillator 11 is provided with a gas supply unit 21 for supplying halogen gas, and the gas supply unit 21 is connected to the apparatus control unit 17 in a controllable manner.
- the apparatus control unit 17 manages the operation time of the gas excitation pulse laser oscillator 11, and operates the gas supply unit 21 every time the operation time elapses for a predetermined time, thereby supplying a predetermined amount of gas to the gas excitation pulse laser oscillator 11. It can be set to refill inside. Further, the gas may be replenished by the operator's operation via the device control unit 17, or the gas may be replenished according to the deterioration of the gas.
- the pulse laser beam 100 output from the gas excitation pulse laser oscillator 11 has two peak groups (first peak and second peak) in one pulse as time passes as shown in FIG.
- the second peak has a peak intensity P2 with respect to the peak intensity P1 of the first peak having the maximum height.
- the peak ratio P2 / P1 is not particularly limited as the present invention, but for example, 0.35 or less is exemplified.
- an output value measuring unit 20 composed of a photodiode or the like is disposed, and a part of the pulse laser beam 100 is input to measure an output value.
- the output value measuring unit 20 is not particularly limited in configuration, and a photodiode or the like can be used.
- the measurement result of the output value measuring unit 20 is transmitted to the output control unit 11a.
- variable attenuator 12 is disposed on the emission side of the gas excitation pulse laser oscillator 11, and an optical system 13 including a homogenizer 13a, a mirror 13b, a lens 13c, and the like is disposed on the output side of the variable attenuator 12. Yes.
- the variable attenuator 12 is illustrated as being located in the optical system 13, but the present invention may be such that the variable attenuator 12 is located outside the optical system 13.
- the variable attenuator 12 attenuates and transmits the pulse laser beam with a predetermined attenuation rate, and the attenuation rate is variable.
- variable attenuator 12 is connected to the device control unit 17 in a controllable manner, and is set to a predetermined attenuation rate by a command to the device control unit 17. In the initial setting, a predetermined attenuation rate is set.
- a predetermined attenuation rate is set.
- the configuration of the variable attenuator is not limited to a specific one in the present invention, and may be any as long as it can transmit the pulsed laser light while changing the attenuation factor.
- the attenuation rate can be adjusted by adjusting the angle of the dielectric, for example.
- the optical system 13 guides the pulse laser beam so that the object to be processed placed on the stage 15 movable in the horizontal direction (XY direction) is irradiated with the pulse laser beam 100. Also.
- the pulse laser beam 100 is shaped into a predetermined beam shape (for example, a line beam shape). The beam shape is shaped in consideration of the size of the substrate 14.
- the stage 15 can be moved in the horizontal direction by a moving device 18 (shown in FIG. 2). By moving the stage 15 relative to the pulse laser beam 100, the pulse laser beam 100 is applied to the amorphous silicon thin film 14a. It is possible to scan while irradiating.
- the scanning speed at this time is not particularly limited in the present invention, but can be exemplified by 1 to 30 mm / second, for example.
- the moving device 18 is connected to the device control unit 17 in a controllable manner, and movement is controlled by the device control unit 17.
- the excimer laser annealing apparatus 1 includes a pulse waveform measurement unit 16 that extracts a part of the pulse laser beam 100 from the optical system 13 and measures a pulse waveform.
- the take-out position at this time is after the beam formation of the laser beam is performed and is behind the pulse laser beam emission direction of the homogenizer 13a.
- the configuration of the pulse waveform measuring unit 16 is not particularly specified, and a high-speed photodiode, a biplanar discharge tube, an oscilloscope, or the like can be used.
- the measurement result of the pulse waveform measurement unit 16 is transmitted to the device control unit 17.
- the apparatus control unit 17 receives the measurement result, analyzes the pulse waveform by image analysis or the like, extracts the peak value P1 of the first peak and the peak value P2 of the second peak as shown in FIG. 3, and P2 / P1 Is calculated as a peak ratio. Moreover, the apparatus control part 17 can calculate pulse energy from a pulse waveform.
- the substrate 14 on which the amorphous silicon thin film 14a is formed is carried in and placed on the stage 15 (step s1).
- the excimer laser annealing apparatus 1 is provided with a processing chamber (not shown) in which atmosphere adjustment (vacuum atmosphere or the like) is performed, and the substrate 14 is carried into the processing chamber for processing.
- the apparatus control unit 17 reads out the initial setting operation parameters from the storage unit 17a and starts the irradiation with the pulsed laser light (step s2). That is, a control command is sent from the gas excitation pulse laser oscillator 11 to the output control unit 11a, and a pulse laser beam is output from the gas excitation pulse laser oscillator 11 at a predetermined discharge voltage. At this time, the variable attenuator 12 is controlled and set to a predetermined attenuation rate. By the output adjustment and the attenuation rate adjustment of the variable attenuator, the processed surface of the amorphous silicon thin film 14a is irradiated with the pulse laser beam with the target pulse energy.
- FIG. 3 shows the pulse waveform of the pulse laser beam output from the gas excitation pulse laser oscillator 11.
- waveforms of pulsed laser beams having different gas concentrations, output energy, and discharge voltage are shown.
- the discharge voltage when the discharge voltage is increased, the output energy increases, and the peak value P2 of the second peak tends to be relatively larger than the peak value P1 of the first peak.
- the discharge voltage when the discharge voltage is decreased, the output energy decreases and the peak value P2 of the second peak tends to be relatively small with respect to the peak value P1 of the first peak.
- the output value of the pulse laser beam 100 output from the gas excitation pulse laser oscillator 11 is measured by the output value measuring unit 20.
- the measurement result is sent to the output control unit 11a as described above.
- the pulse laser beam output from the gas excitation pulse laser oscillator 11 is attenuated by the variable attenuator 12 at a predetermined attenuation rate, is guided by the optical system 13 while being shaped by the optical system 13, and is irradiated onto the amorphous silicon thin film 14a.
- the shaping and the action of guiding the pulsed laser beam to a predetermined optical path are performed by appropriate optical members such as a homogenizer 13a, a mirror 13b, and a lens 13c of the optical system 13.
- the pulse laser beam is scanned by irradiating the pulse laser beam while moving the stage 15. Further, a part of the pulse laser beam 100 is extracted, the pulse waveform measurement unit 16 measures the pulse waveform, and the measurement result is sent to the apparatus control unit 17.
- the output value of the pulse laser beam output from the gas excitation pulse laser oscillator 11 is measured by the output value measuring unit 20 and sent to the output control unit 11a.
- the output control unit 11a it is determined whether or not the measured value is the set output value.
- a predetermined range is set as the set value, and if it deviates from this range, it is determined that it is out of the standard, and feedback control is performed so that the output value is maintained within the standard (step s3).
- the feedback control procedure will be described with reference to FIG. The following control is executed by the program of the output control unit 11a.
- the output value measurement unit 20 measures the output and sends the measurement result to the output control unit 11a (step s3a).
- step s3b it is determined whether or not the measured value is within the set standard. If the measured value is within the standard (step s3b, YES), the process is terminated. If the measured value is out of the standard (step s3b, NO), it is determined whether or not it exceeds the standard (step s3c). If it exceeds the standard (step s3c, YES), the discharge voltage applied to the gas excitation pulse laser oscillator 11 is reduced so that the output falls within the standard (step s3d).
- step s3c, NO the output is smaller than the standard, and the discharge voltage applied to the gas excitation pulse laser oscillator 11 is increased so as to increase the output to within the standard ( Step s3e).
- the process returns to step s3b. If the output value is within the standard, the process is terminated. If the output value is not within the standard, the process for adjusting the discharge voltage is repeated. If the output voltage does not fall within the standard even if the discharge voltage is increased or decreased to a predetermined upper limit value or lower limit value, it is assumed that some error has occurred or that the gas replacement time has been reached. The process may be stopped.
- the feedback control is performed, and further, in the control procedure shown in FIG. 4, the oscillator output target value and the attenuator attenuation rate are adjusted (step s4).
- the above-described oscillator output target value and attenuator attenuation rate target value are set, and these adjustments are not required in the initial operation of the apparatus.
- the pulse waveform measuring unit 16 also has a role as a pulse energy measuring unit.
- a pulse waveform measuring unit and a pulse energy measuring unit may be provided separately. If the energy density is not within the specified range (step s5, NO), the process returns to step s4 to adjust the oscillator output target value and the attenuator attenuation rate. Normally, the pulse energy density can be adjusted by adjusting the attenuation factor of the variable attenuator. If the pulse energy density is within the specified range (step s5, YES), the process proceeds to step s6.
- the processing is terminated as an error, or it is determined that it is time to replace the gas. Can do.
- step s6 the apparatus control unit 17 analyzes the pulse waveform based on the measurement result of the pulse waveform measurement unit 16, and extracts the peak value P1 at the first peak and the peak value P2 at the second peak.
- the ratio P2 / P1 is calculated, a preset peak ratio threshold value is read from the storage unit 17a, and compared with the peak ratio based on the measurement result (step s7). If the peak ratio based on the measurement result is less than or equal to the set peak ratio threshold (step s7, less than the set value), the degree of gas deterioration is acceptable, so that the process is completed (step s8). Returning to step s3, the processing is continued.
- step s7 when the peak ratio based on the measurement result exceeds the peak ratio threshold value (step s7, exceeding the set value), the gas deterioration is considerably advanced, and the gas excitation pulse laser oscillator 11 is set so as to make the peak ratio equal to or less than the threshold value.
- a command is output to the output control unit 11a so as to reduce the discharge voltage applied to the output control unit 11a.
- the output control unit 11a when the discharge voltage is determined in this step, the output value actually obtained by the discharge voltage is set as the target value (step s3).
- the output value is smaller than the set value determined in the initial setting, and in order to compensate for this, the apparatus control unit 17 reduces the attenuation rate of the variable attenuator 12 and increases the transmission rate of the pulse laser beam. Adjust (step s4).
- the adjustment amount described above is set in advance as a control amount and stored in the storage unit 17a.
- the device control unit 17 controls the adjustment with reference to the setting data stored in the storage unit 17a.
- the attenuation factor of the variable attenuator 12 is mainly adjusted so that the energy density of the pulsed laser light applied to the substrate 14 becomes a set value.
- step s7 when adjusting the output of the gas excitation pulse laser oscillator and setting the attenuation factor of the variable attenuator 12 based on the deterioration of the gas, the gas supply unit 21 is operated to supply gas to the gas excitation pulse laser oscillator 11. It may be replenished to improve gas deterioration. That is, the gas is replenished according to the deterioration of the gas. In addition to the above control procedure, the gas can be prevented from deteriorating by periodically replenishing the gas, and the laser annealing process can be performed more uniformly.
- the state of gas deterioration is determined based on the change in the peak ratio of the pulse waveform.
- the first and second controls may be performed by determining the gas deterioration by other methods.
- the deterioration of the gas may be determined based on a change in the discharge voltage applied to the gas excitation pulse laser oscillator 11.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Lasers (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
上記レーザ光の照射においては、半導体薄膜で均質な処理が行われる必要があり、照射されるレーザ光が安定した照射エネルギーを有するように、一般にレーザ出力を一定にする制御がなされており、パルスレーザ光では、パルスエネルギーを一定にする制御がなされている。
このパルスレーザ発振装置では、前記パルスレーザ光の時間変化波形が2以上のピーク群を含み、そのうちの2番目のピーク群のパルスレーザビームのピーク値が最初のピーク群のパルスレーザビームのピーク値に対して、0.37から0.47の範囲内となるように設定している。該装置では、パルスレーザ装置の近傍に配置された共振器のミラーの角度を変更して、各ピーク群の波形比を調整可能にしている。
放電電圧の上昇によって出力エネルギーを維持することはできるが、出力されるパルスレーザ光の波形が変化し、2ndピーク値が相対的に上昇する。2ndピーク値が大きくなれば、1stピーク値と2ndピーク値の割合も大きくなる。
しかし、本発明者らは、2ndピーク値/1stピーク値が大きくなると、レーザパルス毎のショットムラが生じやすくなり、レーザアニール処理において面方向でバラツキが生じてしまい、例えば半導体薄膜の結晶化に影響を及ぼす要因になることを解明している。
前記制御部は、前記ガス励起パルスレーザ発振器内のガスの劣化に応じて、前記第1の制御で調整される前記出力値を低下させるとともに、前記可変アッテネータの減衰率を小さくする第2の制御を行うことを特徴とする。
前記ガス励起パルスレーザ発振器から出力される前記パルスレーザ光の出力値を所定値に調整する第1の制御を行い、該ガス励起パルスレーザ発振器内のガスの劣化状態を判定し、該判定結果に応じて前記第1の制御で調整される前記出力値を低下させるとともに、前記可変アッテネータの減衰率を小さくする第2の制御を行うことを特徴とする。
前記ガス励起パルスレーザ発振器から出力されるパルスレーザ光の出力値を所定値に調整する第1のステップと、該ガス励起パルスレーザ発振器内のガスの劣化状態を判定する第2のステップと、該第2のステップにおける判定結果に応じて前記第1のステップで調整される前記出力の所定値を低下させるとともに、前記可変アッテネータの減衰率を小さくする第3のステップと、を有することを特徴とする。
また、この際には、ガス励起パルスレーザ発振器の出力に対応して可変アッテネータの減衰率が設定される。減衰率は被処理体に照射されるパルスエネルギー積分値が所定値になるように減衰率が決定されるものとすることができる。但し、本発明としてはこれに限定されるものではなく、例えばパルスレーザ光の1つのパルスの極大値を一定に保つように減衰率を決定するなどしてもよい。
第2の制御は、ガスの劣化に応じてなされるものであり、ガスの劣化が所定の状態に達した際に実行されるようにすることができる。この際の所定の状態としては1つの条件の他、2以上の条件を設定して、段階的に第2の制御を行うようにしてもよい。また、ガスの劣化が上記所定の条件に達した後は、ガスの劣化の進行に伴って、第2の制御によって、連続的または段階的に、第1の制御で調整される前記出力値を低下させるとともに、前記可変アッテネータの減衰率を小さくするようにしてもよい。
上記第2の制御によって、パルス波形が大きく変化してレーザアニール処理が不均一になるのを防止して、半導体薄膜の結晶化などを良好に行うことが可能になる。
なお、第2の制御によって、第1の制御で調整される前記出力値が所定の下限値まで低下した場合や前記可変アッテネータの減衰率が所定の下限値まで小さくなると、ガスの交換時期であると判定するようにしてもよい。
特にピーク比を考慮した制御では、ピーク比を所定値以下に抑えたパルスレーザ光を被処理体に照射でき、レーザパルス毎のショットムラを低減できる。
図1は、本発明のレーザアニール処理装置に相当するエキシマレーザアニール装置1を説明する概略図である。
この実施形態では、フラットパネルディスプレイTFTデバイスに用いられる基板14を対象にし、該基板14には被処理体としてアモルファスシリコン薄膜14aが形成されているものとする。アモルファスシリコン薄膜14aは、常法により基板14の上層に形成されている。本発明としては、アモルファスシリコン薄膜14aの形成方法は特に限定されるものではない。
該ガス励起パルスレーザ発振器11では、初期設定として所定の出力パルスエネルギーでパルスレーザ光が出力されるように設定されている。本発明としては出力パルスエネルギーの値が特定のものに限定されるものではないが、例えば850~1050mJ/パルスを示すことができる。
前記出力制御部11aには、エキシマレーザアニール装置1全体を制御する装置制御部17が制御可能に接続されており、装置制御部17の指令に基づいて出力制御部11aでは、ガス励起パルスレーザ発振器11を動作させるパルス信号を生成し、この際にガス励起パルスレーザ発振器11における放電電圧が決定する。
この実施形態では、本発明の制御部2として、二つの装置制御部17と前記出力制御部11aとが役割分担をして機能しているが、本発明としてはその数は特に限定されるものではなく、また、一つの制御部で本発明としての制御部の機能を果たすものであってもよい。
また、記憶部17aには、後述するピーク比のピーク比閾値が格納されており、該ピーク比閾値を越えた際に調整するガス励起パルスレーザ発振器11に対する放電電圧の低下量、可変アッテネータの減衰率の低下量などが制御量データとして格納されている。
なお、この実施形態では、1つのピーク比閾値が設定されているものとして説明するが、2つ以上のピーク比閾値を設定し、各閾値に応じて上記制御量をそれぞれ定めるようにしてもよい。
ステージ15は、移動装置18(図2示)で水平方向に移動することができ、ステージ15をパルスレーザ光100に対し相対的に移動させることで、アモルファスシリコン薄膜14aに対しパルスレーザ光100を照射しつつ走査することを可能にする。この際の走査速度は本発明としては特に限定されるものではないが、例えば1~30mm/秒を例示することができる。上記移動装置18は前記装置制御部17に制御可能に接続され、該装置制御部17によって移動が制御される。
なお、パルス波形測定部16としては特に構成が特定されるものではなく、高速フォトダイオード、バイプラナー放電管、オシロスコープなどを用いることができる。該パルス波形測定部16の測定結果は、前記装置制御部17に送信されている。装置制御部17では、測定結果を受けて画像分析などによってパルス波形を解析し、図3に示すような第1ピークのピーク値P1と第2ピークのピーク値P2とを抽出し、P2/P1をピーク比として算出する。また、装置制御部17は、パルス波形からパルスエネルギーを算出することができる。
先ず、処理の開始に伴って、アモルファスシリコン薄膜14aが形成された基板14が搬入され、ステージ15上に載置される(ステップs1)。通常は、エキシマレーザアニール装置1は雰囲気調整(真空雰囲気など)がなされる処理室(図示しない)を備えており、該処理室内に基板14を搬入して処理を行う。
上記出力調整と可変アッテネータの減衰率調整によって、アモルファスシリコン薄膜14aの加工面では、目標とするパルスエネルギーでパルスレーザ光が照射されることになる。
この際にステージ15を移動させながらパルスレーザ光を照射することでパルスレーザ光の走査がなされる。また、パルスレーザ光100の一部が取り出され、パルス波形測定部16でパルス波形が測定され、測定結果が装置制御部17に送られている。
さらに、基板14に照射されるエネルギー密度が規定内であるか否かの判定がなされる(ステップs5)。具体的には、パルスレーザ光のパルス波形がパルス波形測定部16で測定され、測定結果が装置制御部17に送られてパルスレーザ光のパルスエネルギーが測定される。装置制御部17では、光学系13による整形によってレーザビームの断面積が把握されており、これによりパルスエネルギー密度が算出される。すなわち、この実施形態ではパルス波形測定部16がパルスエネルギー測定部としての役割も有している。なお、本発明としては、パルス波形測定部とパルスエネルギー測定部とを別個に備えるものであってもよい。上記エネルギー密度が規定内になければ(ステップs5、NO)、ステップs4に戻って発振器出力目標値とアッテネータ減衰率が調整される。通常は、可変アッテネータの減衰率の調整によって、パルスエネルギー密度を調整することができる。パルスエネルギー密度が規定内にあれば(ステップs5、YES)、ステップs6へ移行する。ガス励起パルスレーザ発振器11の出力調整範囲および可変アッテネータ12の減衰率調整範囲内でパルスエネルギー密度が規定内に収まらなければ、エラーとして処理を終了したり、ガスの交換時期と判定したりすることができる。
なお、この実施形態では、パルス波形のピーク比の変化によってガスの劣化の状態を判定したが、本発明としては他の方法によってガスの劣化を判定し第1、第2の制御を行うことも可能であり、例えば、ガス励起パルスレーザ発振器11に印加される放電電圧の変化に基づいてガスの劣化を判定するようにしてもよい。
2 制御部
11 ガス励起パルスレーザ発振器
11a 出力制御部
12 可変アッテネータ
13 光学系
14 基板
14a アモルファスシリコン薄膜
15 ステージ
16 パルス波形測定部
17 装置制御部
18 移動装置
20 出力値測定部
21 ガス供給部
Claims (14)
- ガス励起パルスレーザ発振器と、該ガス励起パルスレーザ発振器から出力されたパルスレーザ光を所定の減衰率で透過させる可変アッテネータと、該可変アッテネータを透過したパルスレーザ光を被処理体に導く光学系と、前記ガス励起パルスレーザ発振器における前記パルスレーザ光の出力値を調整する第1の制御を行う制御部とを備え、
前記制御部は、前記ガス励起パルスレーザ発振器内のガスの劣化に応じて、前記第1の制御で調整される前記出力値を低下させるとともに、前記可変アッテネータの減衰率を小さくする第2の制御を行うことを特徴とするレーザアニール処理装置。 - 前記被処理体に照射されるパルスレーザ光のパルス波形を測定するパルス波形測定部を備え、
前記制御部は、前記パルス波形測定部の測定結果を受けて、測定されたパルス波形における第1ピーク値P1および第2ピーク値P2とからピーク比P2/P1を求め、該ピーク比が所定比を越える場合、前記ガスが劣化したものとして前記第2の制御を行うことを特徴とする請求項1記載のレーザアニール処理装置。 - 前記制御部は、前記第1の制御における前記出力値の調整を前記ガス励起パルスレーザ発振器に印加する放電電圧の調整によって行い、前記放電電圧が所定電圧を超えると前記ガスが劣化したものとして前記第2の制御を行うことを特徴とする請求項1記載のレーザアニール処理装置。
- 前記ガス励起パルスレーザ発振器におけるパルスレーザ光の出力値を測定する出力値測定部を備え、前記制御部は、該出力値測定部の測定結果を受けて前記ガス励起パルスレーザ発振器の出力が所定の出力値となるように前記第1の制御を行うことを特徴とする請求項1~3のいずれかに記載のレーザアニール処理装置。
- 前記ガス励起パルスレーザ発振器に対し前記ガスを補給するガス供給手段を備え、前記制御部は、前記ガスの劣化および前記ガス励起パルスレーザ発振器の稼働時間の一方または両方に応じて前記ガス供給手段による前記ガス補給の制御を行うことを特徴とする請求項1~4のいずれかに記載のレーザアニール処理装置。
- 前記制御部は、前記被処理体に照射されるパルスレーザ光のパルスエネルギーが所定エネルギー値になるように、前記可変アッテネータの減衰率を調整することを特徴とする請求項1~5のいずれかに記載のレーザアニール処理装置。
- 前記被処理体に照射されるパルスレーザ光のパルスエネルギーを測定し、その測定結果を前記制御部に出力するパルスエネルギー測定部を備え、前記制御部は、前記測定結果に基づいて前記調整を行うことを特徴とする請求項6記載のレーザアニール処理装置。
- 前記パルスエネルギー測定部は、前記光学系でビーム形状の整形がされた後のパルスレーザ光を測定するものであることを特徴とする請求項7記載のレーザアニール処理装置。
- 前記制御部は、前記ガスの劣化進行に伴って前記ガスの交換時期であると判定することを特徴とする請求項1~8のいずれかに記載のレーザアニール処理装置。
- ガス励起パルスレーザ発振器から出力されたパルスレーザ光を所定の減衰率で可変アッテネータに透過させて被処理体に照射するレーザアニール処理体の製造方法であって、
前記ガス励起パルスレーザ発振器から出力される前記パルスレーザ光の出力値を所定値に調整する第1の制御を行い、該ガス励起パルスレーザ発振器内のガスの劣化状態を判定し、該判定結果に応じて前記第1の制御で調整される前記出力値を低下させるとともに、前記可変アッテネータの減衰率を小さくする第2の制御を行うことを特徴とするレーザアニール処理体の製造方法。 - 前記パルスレーザ光のパルス波形を測定し、測定されたパルス波形における第1ピーク値P1および第2ピーク値P2とからピーク比P2/P1を求め、該ピーク比が所定比を越える場合、前記ガスが劣化したものとして前記第2の制御を行うことを特徴とする請求項10記載のレーザアニール処理体の製造方法。
- 前記第1の制御における前記出力値の調整を前記ガス励起パルスレーザ発振器に印加する放電電圧の調整によって行うことを特徴とする請求項10または11に記載のレーザアニール処理体の製造方法。
- 前記被処理体に照射されるパルスレーザ光のパルスエネルギーが所定エネルギー値になるように、前記可変アッテネータの減衰率を調整することを特徴とする請求項10~12のいずれかに記載のレーザアニール処理体の製造方法。
- ガス励起パルスレーザ発振器から出力されるパルスレーザ光の出力値を所定値に調整するとともに、前記ガス励起パルスレーザ発振器から出力されて被処理体に照射されるパルスレーザ光を所定の透過率で透過させる可変アッテネータの透過率を調整する制御部で動作するプログラムであって、
前記ガス励起パルスレーザ発振器から出力されるパルスレーザ光の出力値を所定値に調整する第1のステップと、該ガス励起パルスレーザ発振器内のガスの劣化状態を判定する第2のステップと、該第2のステップにおける判定結果に応じて前記第1のステップで調整される前記出力の所定値を低下させるとともに、前記可変アッテネータの減衰率を小さくする第3のステップと、を有することを特徴とするレーザアニール処理プログラム。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020117031337A KR101425112B1 (ko) | 2010-05-11 | 2011-02-14 | 레이저 어닐링 장치, 피처리체의 레이저 어닐링 방법, 및 레이저 어닐링 프로그램 |
CN201180003017.7A CN102473615B (zh) | 2010-05-11 | 2011-02-14 | 激光退火处理装置、激光退火处理体的制造方法及激光退火处理方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010109693A JP5430488B2 (ja) | 2010-05-11 | 2010-05-11 | レーザアニール処理装置、レーザアニール処理体の製造方法およびレーザアニール処理プログラム |
JP2010-109693 | 2010-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011142154A1 true WO2011142154A1 (ja) | 2011-11-17 |
Family
ID=44914213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/053031 WO2011142154A1 (ja) | 2010-05-11 | 2011-02-14 | レーザアニール処理装置、レーザアニール処理体の製造方法およびレーザアニール処理プログラム |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5430488B2 (ja) |
KR (1) | KR101425112B1 (ja) |
CN (1) | CN102473615B (ja) |
TW (1) | TWI446451B (ja) |
WO (1) | WO2011142154A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105099447A (zh) * | 2014-03-24 | 2015-11-25 | 联发科技股份有限公司 | 使用注入锁定振荡器的时钟及数据恢复电路及方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5829575B2 (ja) * | 2012-05-28 | 2015-12-09 | 株式会社日本製鋼所 | パルス波形測定機能を有するレーザアニール装置 |
JP5904590B2 (ja) * | 2012-10-05 | 2016-04-13 | 株式会社日本製鋼所 | 結晶質半導体の製造方法および結晶質半導体の製造装置 |
JP2015012204A (ja) * | 2013-07-01 | 2015-01-19 | 株式会社日本製鋼所 | レーザアニール装置 |
KR101523673B1 (ko) * | 2013-12-27 | 2015-05-28 | 에이피시스템 주식회사 | 레이저 조사 방법 및 레이저 조사 모듈 |
US9335276B2 (en) * | 2014-03-03 | 2016-05-10 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for control of excimer laser annealing |
WO2018229823A1 (ja) | 2017-06-12 | 2018-12-20 | ギガフォトン株式会社 | レーザ装置、及びレーザ装置管理システム、並びにレーザ装置の管理方法 |
JP6697108B2 (ja) * | 2019-04-22 | 2020-05-20 | ギガフォトン株式会社 | レーザ装置及び極端紫外光生成システム |
CN112038267B (zh) * | 2020-09-21 | 2024-02-20 | 京东方科技集团股份有限公司 | 一种激光能量的调节装置 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08195357A (ja) * | 1995-01-13 | 1996-07-30 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
JPH1012549A (ja) * | 1996-06-25 | 1998-01-16 | Toshiba Corp | パルスガスレーザ発振装置、レーザアニール装置、半導体装置の製造方法、及び半導体装置 |
JPH11283933A (ja) * | 1998-01-29 | 1999-10-15 | Toshiba Corp | レ―ザ照射装置,非単結晶半導体膜の製造方法及び液晶表示装置の製造方法 |
JP2000200760A (ja) * | 1999-01-07 | 2000-07-18 | Matsushita Electric Ind Co Ltd | レ―ザアニ―ル処理方法とレ―ザアニ―ル処理装置 |
JP2001057346A (ja) * | 1999-08-19 | 2001-02-27 | Toshiba Corp | レーザ加工方法およびレーザ加工装置 |
JP2003163167A (ja) * | 2001-09-12 | 2003-06-06 | Hitachi Ltd | 多結晶半導体膜、多結晶半導体膜製造方法及びそれを用いた薄膜半導体素子 |
JP2003258349A (ja) * | 2002-03-04 | 2003-09-12 | Toshiba Corp | レーザ加工方法、その装置および薄膜加工方法 |
JP2004063879A (ja) * | 2002-07-30 | 2004-02-26 | Sony Corp | レーザ加工装置およびレーザ加工方法 |
JP2005219077A (ja) * | 2004-02-04 | 2005-08-18 | Sumitomo Heavy Ind Ltd | レーザエネルギ調整装置、及びレーザエネルギ調整方法、及びレーザ加工機 |
JP2006049606A (ja) * | 2004-08-05 | 2006-02-16 | Sumitomo Heavy Ind Ltd | レーザ加工装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3296148B2 (ja) * | 1994-06-24 | 2002-06-24 | 住友電気工業株式会社 | ウエハ−及びその製造方法 |
SG108878A1 (en) * | 2001-10-30 | 2005-02-28 | Semiconductor Energy Lab | Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device |
US7050878B2 (en) * | 2001-11-22 | 2006-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductror fabricating apparatus |
KR100531416B1 (ko) * | 2003-09-17 | 2005-11-29 | 엘지.필립스 엘시디 주식회사 | Sls 장비 및 이를 이용한 실리콘 결정화 방법 |
JP4765378B2 (ja) * | 2005-04-08 | 2011-09-07 | パナソニック株式会社 | レーザ加工装置 |
-
2010
- 2010-05-11 JP JP2010109693A patent/JP5430488B2/ja active Active
-
2011
- 2011-02-14 WO PCT/JP2011/053031 patent/WO2011142154A1/ja active Application Filing
- 2011-02-14 CN CN201180003017.7A patent/CN102473615B/zh active Active
- 2011-02-14 KR KR1020117031337A patent/KR101425112B1/ko active IP Right Grant
- 2011-03-02 TW TW100106887A patent/TWI446451B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08195357A (ja) * | 1995-01-13 | 1996-07-30 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
JPH1012549A (ja) * | 1996-06-25 | 1998-01-16 | Toshiba Corp | パルスガスレーザ発振装置、レーザアニール装置、半導体装置の製造方法、及び半導体装置 |
JPH11283933A (ja) * | 1998-01-29 | 1999-10-15 | Toshiba Corp | レ―ザ照射装置,非単結晶半導体膜の製造方法及び液晶表示装置の製造方法 |
JP2000200760A (ja) * | 1999-01-07 | 2000-07-18 | Matsushita Electric Ind Co Ltd | レ―ザアニ―ル処理方法とレ―ザアニ―ル処理装置 |
JP2001057346A (ja) * | 1999-08-19 | 2001-02-27 | Toshiba Corp | レーザ加工方法およびレーザ加工装置 |
JP2003163167A (ja) * | 2001-09-12 | 2003-06-06 | Hitachi Ltd | 多結晶半導体膜、多結晶半導体膜製造方法及びそれを用いた薄膜半導体素子 |
JP2003258349A (ja) * | 2002-03-04 | 2003-09-12 | Toshiba Corp | レーザ加工方法、その装置および薄膜加工方法 |
JP2004063879A (ja) * | 2002-07-30 | 2004-02-26 | Sony Corp | レーザ加工装置およびレーザ加工方法 |
JP2005219077A (ja) * | 2004-02-04 | 2005-08-18 | Sumitomo Heavy Ind Ltd | レーザエネルギ調整装置、及びレーザエネルギ調整方法、及びレーザ加工機 |
JP2006049606A (ja) * | 2004-08-05 | 2006-02-16 | Sumitomo Heavy Ind Ltd | レーザ加工装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105099447A (zh) * | 2014-03-24 | 2015-11-25 | 联发科技股份有限公司 | 使用注入锁定振荡器的时钟及数据恢复电路及方法 |
CN105099447B (zh) * | 2014-03-24 | 2018-11-09 | 联发科技股份有限公司 | 使用注入锁定振荡器的时钟及数据恢复电路及方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201145396A (en) | 2011-12-16 |
JP2011238804A (ja) | 2011-11-24 |
KR101425112B1 (ko) | 2014-08-01 |
CN102473615B (zh) | 2015-04-01 |
JP5430488B2 (ja) | 2014-02-26 |
CN102473615A (zh) | 2012-05-23 |
TWI446451B (zh) | 2014-07-21 |
KR20130044125A (ko) | 2013-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5430488B2 (ja) | レーザアニール処理装置、レーザアニール処理体の製造方法およびレーザアニール処理プログラム | |
TWI508144B (zh) | 雷射回火處理裝置以及雷射回火處理方法 | |
US20060054077A1 (en) | Pulse sequencing lateral growth method | |
KR20060048396A (ko) | 반도체 박막의 제조 방법 및 제조 장치 | |
TWI512827B (zh) | 半導體膜的雷射回火方法以及回火裝置 | |
JP2011114052A (ja) | 半導体基板の製造方法及びレーザアニール装置 | |
TWI816674B (zh) | 用於準分子雷射矽結晶之能量控制器 | |
JP5214662B2 (ja) | 多結晶シリコン薄膜の製造方法 | |
KR102108025B1 (ko) | 결정질 반도체의 제조 방법 및 결정질 반도체의 제조 장치 | |
JP5614768B2 (ja) | レーザ処理装置およびレーザ処理方法 | |
JP2005116729A (ja) | レーザ加工装置およびレーザ加工方法 | |
KR102397423B1 (ko) | 레이저 장치 및 이의 구동방법 | |
JP5203348B2 (ja) | 半導体基板の製造方法および半導体基板製造装置 | |
WO2021049127A1 (ja) | レーザ処理装置及びレーザ光モニタ方法 | |
KR101323614B1 (ko) | 결정질막의 제조 방법 및 결정질막 제조 장치 | |
JP2005219077A (ja) | レーザエネルギ調整装置、及びレーザエネルギ調整方法、及びレーザ加工機 | |
JP5645220B2 (ja) | 半導体膜のレーザアニール装置 | |
KR101591490B1 (ko) | 레이저 보정 방법 및 장치 | |
KR100553761B1 (ko) | 레이저 어닐링 방법 및 레이저 어닐링 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180003017.7 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 20117031337 Country of ref document: KR Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11780412 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11780412 Country of ref document: EP Kind code of ref document: A1 |