201145396 六、發明說明： 【發明所屬之技術領域1 本發明是有關於一種對被處理體照射脈衝雷射光以進 行雷射退火的雷射退火處理裝置、雷射退火處理體的製造 方法及雷射退火處理程式。 【先前技術】 於液晶顯示器或有機電致發光 (Electro-Luminescence ’ EL )顯示器的晝素開關或驅動電 路中所使用的薄膜電晶體中，作為低溫製程的製造方法的 一環，進行使用雷射光的雷射退火。該方法是在對成膜於 基板上的非單晶半導體膜照射雷射光而局部地進行加熱熔 融之後，在其冷卻過程中將半導體薄膜結晶化為多晶或者 單BB。結晶化的半導體薄膜中因載子(carrjer)的遷移率變高 而可使薄膜電晶體高性能化》 。 於上述雷射光的照射中，必需對半導體薄膜進行均質 的處理’一般而言是進行將雷射輸出設為固定的控制，以 使所照射的雷射光具有穩定的照射能量，脈衝雷射光受到 將脈衝能量設為固定的控制。 然而上述方法中大多數被利用的準分子(excimer)氣 體雷射根據放電方式使氣體激發而使雷射光振盪。於高輸 出的準分子氣體雷射中，在第一次藉由高電壓的放電之 後藉由殘留電壓而產生多個放電’並根據其結果而產生 具有多個波峰的雷射光。此時，第二波峰以後的波峰的特 眭與第波峰有所不同。因此，提出有一種脈衝雷射振盪 4 201145396 裝置，該脈衝雷射振盪裝置求出脈衝雷射光的脈衝波形中 的多個極大值之間的比，使用該比處於規定範圍的雷射光 而將結晶化矽的特性保持為固定（參照專利文獻1；)。 於該脈衝雷射振盪裝置中，上述脈衝雷射光的時間變 化波形包含2個以上的波峰群，其中第二波峰群的脈衝雷 射光束的波峰值相對於最初的波峰群的脈衝雷射光束的波 峰值設定為0.37至0.47的範圍内。該裝置中，變更配置 於脈衝雷射裝置的附近的共振器的鏡面（mi订沉）的角度， 從而可調整各波峰群的波形比。 [先行技術文獻] [專利文獻] [專利文獻1] 曰本專利特開2001-338892公報 然而’於脈衝雷射振盪器中，藉由施加至該振盪器的 放電電壓而使輸出發生變化’從而具有若放電電壓增大則 輸出增大的傾向。因此，一般而言，利用光電二極體等的 適當的測定部對自氣體激發脈衝雷射振盪器所輸出的脈衝 雷射光的輸出進行測定’並進行如下的反饋控制：根據該 測定結果’以使上述脈衝雷射光的輸出成為目標值的方式 來調整上述放電電壓。 而且’於藉由氣體激發來輸出脈衝雷射光的氣體激發 脈衝雷射振盪器中’藉由該雷射振盪器的運行，氣體容易 隨時間經過而與其他物質化合，因氣體濃度的減少或純度 的降低而導致氣體劣化。若氣體發生劣化則輸出能量降 201145396 低’因此雷射裝置中具有氣體注入⑽㈣⑽的功能將 HC1氣體等.的激發用的氣體於—定的週期内注人至振屋器 内、°然而’ ^該氣體於—定的週油未被注人，或者氣體 ^主入t未症充分抑制氣體的劣化，則為了將輸出能量保 寺為目私值，須藉由上述反饋控制使放電電壓逐漸上升。 因放電電壓的上升而可維持輸出能量 ，但輸出的脈衝 射光=㈣會發生變化，縣二（2nd)料值會相對地 上升。右2nd波峰值增大，則第一（lst)波峰值與2nd波 峰值的比例亦增大。 然而’本發明者等人瞭解到’若2nd波峰值/1st波峰 值增大，則每個雷射脈衝的照射（sh〇t)不均容易發生， 於，射退火處理巾面方向上會產线差，從騎成為例如 對半導體薄膜的結晶化造成影響的主要原因。 【發明内容】 本發明疋為了解決如上述般的先前的課題而完成，其 目的在於提供一種不受經時性的氣體的劣化的影響，而能 夠進行將穩定的脈衝波形的脈衝雷射光照射至被處理體來 進行良好的雷射退火的雷射退火處理裝置，雷射退火處理 程式及雷射退火處理體的製造方法，其可獲得特性優異的 雷射退火處理體。 亦即，本發明的雷射退火處理裝置的特徵在於包括： 氣體激發脈衝雷射振盪器；可變衰減器（attenuat〇r)，使 自該氣體激發脈衝雷射振蘆器輸出的脈衝雷射光以規定的 衰減率透過；光學系統，將已透過該可變衰減器的脈衝雷 201145396 0 /Dy^pif 值；且 射光向被處理鮮引；以及控制部，進行第以調整 上述氣體激發脈衝雷射振盪㈣上述脈衝雷射光的輸出 述㈣雜據上述氣體激發_雷射顧11内的氣 2劣化，進行第2鋪使由上述第丨控制而調整的上述 輸出值降低、並且減小上述可魏魅的衰減率。 本發明的雷射退火處理體的製造方法，使自氣體 3雷射㈣H輸出親衝諸光以規定的衰減率透過可 變哀減器後騎至被處理體，該雷射退域理體的 法的特徵在於： 々 進行第1控制以便將自上述氣體激發脈衝雷射振 輸出的上述脈衝f射光的輸出值調整為規定值，判定該卞 體激發脈衝雷射減器内的氣體的劣化狀態，根據該Z 結果進行第2㈣使由上料i鋪而敏 降低、並且減小上述可變衰減器的衰減率。⑽出值 本發明的雷射退火處理程式是由對可變衰減器的 ，進行調整的控制部進行動作的程式，該可變衰減器 成體，發脈衝雷射振盡器輸出的脈衝雷射光的輸出值調 :規定值’並且使自上述氣體激發脈衝雷射振盪器輪出 几、射至被處理體的脈衝雷射光以規定的透過率透過， 射退火處理程式的特徵在於包括： D"胥 ，第1步驟，將自上述氣體激發脈衝雷射振盪器輪 脈衝雷射光的輸iii值調整為規定值；第2步驟，對體 激發脈衝雷射缝H内的氣體的劣化狀誠行狀；2 201145396 第3步驟，根據該第2步驟中的判定結果來使上述第i步 驟中調整的上述輸出的規定值降低、並且減小上述可變衰 減器的哀減率。 本發明中，自氣體尚未劣化的初始的狀態等開始，執 行調整氣體激發脈衝雷射振in的脈衝雷射光的輸出值的 第1控制。於該控财，通常預先設定作為目標的規定的 輸出值，並進行氣體激發脈衝雷射振盪器的輪出調整以使 輸出成為該規定的輸出值。該調整通常藉由施加至上述氣 體激發脈衝雷射振盪器的放電電壓的調整來進行。例如， 利用光電二極體等的適當的輸出值測定部來對自氣體激發 脈衝雷射振盪器輸出的脈衝雷射光的輸出進行測定，並根 ，該測定結果進㈣上述脈衝諸光的輸ώ成為目標的規 定輸出值的方式來調整上述放電電壓的反饋控制。再者， 本發明中輪出值測定部的構成未作特別限定，亦可對脈衝 雷射光的輸出的大小進行測定。 而且，此時，對應於氣體激發脈衝雷射振盪器的輸出 ^設定可變衰減器的衰減率。衰減率能夠以如下方式來決 定，即，照射至被處理體的脈衝能量積分值成為規定值。 然而，本發明並不限定於此，例如亦能以將脈衝雷射光的 一個脈衝的極大值保持為固定的方式來決定衰減率等。 本發明中’依據氣體發生劣化的狀態，來進行第2控 制使由上述第1控制而調整的上述輸出值降低、並且減小 上述可變衰減器的衰減率。 第2控制依據氣體的劣化來進行，能夠於氣體的劣化 201145396 ^/jyjpif 達到規定的狀態時來進行。關於此時的規定的狀態，除設 定一個條件之外，亦可設定2個以上的條件，以階段性地 進行第2控制。而且，當氣體的劣化達到上述規定的條件 之後，伴隨氣體的劣化的進行，亦可藉由第2控制而連續 地或階段性地使由第1控制所調整的上述輸出值降低、並 且減小上述可變衰減器的衰減率。 藉由上述第2控制，防止脈衝波形大幅變大且防止雷 射退火處理變得不均一，從而可良好地進行半導體薄膜的 結晶化等。 再者’藉由第2控制’若由第1控制所調整的上述輸 ^降低至蚊的下限值為止或若上述可變衰減器的衰減 ^減小至規定的下限值為止，則亦可判定為氣體的更 期。 作氣體的劣化可藉由各種資訊來判定。例如， 激發脈衝雷射缝糾運行_與氣體 =的:===:述相_來判 =二的時間臨限(一)值，並藉:二= ，超出該時間臨限值來進行上述第2控制。運行時間^ 控制該氣體激魏衝雷射缝^用的翻料行管理。 放電化可藉由氣體激發脈衝雷射振盪器的 體的劣化而該4=藉=述反饋控制，伴隨氣 Λ双黾電壓增尚。於該情況下，可 叙1個或2個以上的電壓臨限值，並藉由實際的放 9 201145396 D/jyopn 電電壓超出該電壓臨限值來進行上述第2控制。放電電壓 由對氣體激發脈衝雷射振盪器進行控制的控制部而決定， 從而可容易掌握。 而且，氣體的劣化可由根據照射至被處理體的脈衝波 形的第1波+值P1及第2波峰值P2所求出的波峰比j»2/pi 來判疋。另外，第1波峰值可由最初所出現的第1波峰群 的最大南度（第1波峰的高度）來表示，第2波峰值可由 第1波峰群以後出現的第2波岭群的最大高度（第2波蜂 的高度）來表示。於通常的氣體激發雷射中，最初將出現 高度相對較大的第1波峰群，然後，經過強度大幅降低的 極小值（最大高度的數分之丨程度）之後，出現高度相對 較小的第2波峰群，從而大致具有2個波峰群。另外，本 發明中可於1脈衝中出現3個以上的波峰群。 若如上述般伴隨氣體的劣化而氣體激發脈衝雷射振盪 器的放電電壓上升，且脈衝波形發生變化，則上述波峰比 P2/P1增大。於該情況下，可預先針對波峰比而設置i個 或2個以上的波峰比臨限值，並藉由實際的波峰比超出該 波峰比臨限值來進行上述第2控制。另外，該波峰比可由 適當的脈衝波形測定部來對照射至被處理體的脈衝雷射光 的脈衝波形測定，並藉由圖像分析等來抽出第丨波峰與第 2波峰，根據各自的波峰的大小來算出上述波峰比。該波 峰比的算出可藉由控制部而進行。 尤其於考慮波峰比的控制中’將波峰比抑制為規定值 以下的脈衝雷射光可照射至被處理體，從而可減小每個雷 201145396201145396 VI. Description of the Invention: [Technical Field 1 of the Invention] The present invention relates to a laser annealing treatment apparatus for irradiating pulsed laser light to a subject to perform laser annealing, a method of manufacturing a laser annealing treatment body, and a laser Annealing program. [Prior Art] In a thin film transistor used in a halogen switch or a driving circuit of a liquid crystal display or an electro-luminescence (EL) display, laser light is used as a part of a manufacturing method of a low-temperature process. Laser annealing. In this method, after the non-single crystal semiconductor film formed on the substrate is irradiated with laser light and locally heated and melted, the semiconductor film is crystallized into polycrystalline or single BB during the cooling process. In the crystallized semiconductor thin film, the mobility of the carrier (carrjer) becomes high, and the thin film transistor can be improved in performance. In the irradiation of the above-mentioned laser light, it is necessary to perform a homogeneous treatment on the semiconductor thin film. Generally, the laser output is fixedly controlled so that the irradiated laser light has stable irradiation energy, and the pulsed laser light is received. The pulse energy is set to a fixed control. However, most of the excimer gas lasers utilized in the above methods oscillate the laser light to oscillate the laser light according to the discharge mode. In the high-output excimer gas laser, a plurality of discharges are generated by the residual voltage after the first high-voltage discharge, and laser light having a plurality of peaks is generated according to the result. At this time, the characteristics of the peak after the second peak are different from those of the first peak. Therefore, there has been proposed a pulsed laser oscillation 4 201145396 device which obtains a ratio between a plurality of maximum values in a pulse waveform of pulsed laser light, and crystallizes the laser light in a predetermined range using the ratio The characteristics of the pupation are kept constant (refer to Patent Document 1;). In the pulsed laser oscillation device, the time-varying waveform of the pulsed laser light includes two or more peak groups, wherein the peak of the pulsed laser beam of the second peak group is relative to the pulsed laser beam of the initial peak group. The peak value is set in the range of 0.37 to 0.47. In this device, the angle of the mirror surface (mi-sinking) of the resonator disposed in the vicinity of the pulse laser device is changed, so that the waveform ratio of each peak group can be adjusted. [Patent Literature] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-338892. However, in the pulse laser oscillator, the output is changed by the discharge voltage applied to the oscillator. There is a tendency that the output increases as the discharge voltage increases. Therefore, in general, the output of the pulsed laser light output from the gas excitation pulse laser oscillator is measured by an appropriate measuring unit such as a photodiode, and the following feedback control is performed: based on the measurement result The discharge voltage is adjusted such that the output of the pulsed laser light becomes a target value. Moreover, 'in a gas-excited pulsed laser oscillator that outputs pulsed laser light by gas excitation', by the operation of the laser oscillator, the gas easily combines with other substances over time due to a decrease in gas concentration or purity. The decrease is caused by gas degradation. If the gas is degraded, the output energy drop is low at 201145396. Therefore, the function of gas injection (10) (4) (10) in the laser device is to inject the gas for excitation of HC1 gas into the vibrating chamber within a predetermined period, however '^ If the gas is not injected into the fixed oil, or the gas is mainly suppressed, the deterioration of the gas is sufficiently suppressed. In order to increase the output energy to the private value, the discharge voltage must be gradually increased by the above feedback control. . The output energy can be maintained due to the rise of the discharge voltage, but the output pulse light = (4) will change, and the county 2 (2nd) material value will rise relatively. As the right 2nd peak increases, the ratio of the first (lst) peak to the 2nd peak also increases. However, the inventors of the present invention have learned that if the peak of the 2nd wave/the peak of the 1st wave is increased, the unevenness of the irradiation (sh〇t) of each laser pulse is likely to occur, and the film is produced in the direction of the shot annealing treatment. The line difference is a major cause of influence on the crystallization of a semiconductor film, for example. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems as described above, and an object of the invention is to provide a pulsed laser beam having a stable pulse waveform to be irradiated without being affected by deterioration of a gas over time. A laser annealing treatment apparatus that performs good laser annealing on a target object, a laser annealing treatment program, and a method of manufacturing a laser annealing treatment body can obtain a laser annealing treatment body having excellent characteristics. That is, the laser annealing treatment apparatus of the present invention is characterized by comprising: a gas excitation pulse laser oscillator; a variable attenuator (attenuat〇r) for causing pulsed laser light output from the gas excitation pulse laser vibrator Transmitted at a predetermined attenuation rate; the optical system passes the pulsed Ray 201145396 0 /Dy^pif value that has passed through the variable attenuator; and the light is directed to the processed fresh light; and the control unit performs the first adjustment of the gas excitation pulse (4) The output of the pulsed laser light is described above. (4) The gas 2 is degraded in the gas excitation_ray 11 and the second output is adjusted to reduce the output value adjusted by the second control. Wei Mei's attenuation rate. In the method for producing a laser annealing treatment body according to the present invention, the light is emitted from the gas (3) H output and the light is transmitted through the variable attenuator at a predetermined attenuation rate, and then the target body is driven to the object to be processed. The method is characterized in that: 第 performing a first control to adjust an output value of the pulsed light emitted from the gas excitation pulse laser output to a predetermined value, and determining a deterioration state of a gas in the body excitation pulse laser reducer According to the Z result, the second (four) is made to be lowered by the feeding i, and the attenuation rate of the above variable attenuator is reduced. (10) Value The laser annealing processing program of the present invention is a program for operating a control unit that adjusts the variable attenuator, and the variable attenuator is a body, and the pulsed laser light output from the pulsed laser oscillator is output. The output value is adjusted to a predetermined value and the pulsed laser light that is emitted from the gas excitation pulse laser oscillator and emitted to the object to be processed is transmitted at a predetermined transmittance. The radiation annealing process is characterized by: D"胥, in the first step, the value of the input iii of the pulsed laser light from the gas excitation pulse laser oscillator is adjusted to a predetermined value; and in the second step, the deterioration of the gas in the laser slit H of the body excitation pulse is performed; 2 201145396 In the third step, based on the determination result in the second step, the predetermined value of the output adjusted in the i-th step is lowered, and the rate of abrupt reduction of the variable attenuator is reduced. In the present invention, the first control for adjusting the output value of the pulsed laser light of the gas excitation pulse laser in is performed from the initial state in which the gas has not deteriorated. For this money control, a predetermined output value as a target is usually set in advance, and the round-off adjustment of the gas excitation pulse laser oscillator is performed so that the output becomes the predetermined output value. This adjustment is usually performed by adjustment of the discharge voltage applied to the above-described gas excitation pulse laser oscillator. For example, an appropriate output value measuring unit such as a photodiode is used to measure the output of the pulsed laser light output from the gas excitation pulse laser oscillator, and the measurement result is entered into (4) the output of the pulsed light. The feedback control of the above-described discharge voltage is adjusted in such a manner as to be a target output value. Further, the configuration of the wheel-out value measuring unit in the present invention is not particularly limited, and the magnitude of the output of the pulsed laser light can be measured. Moreover, at this time, the attenuation rate of the variable attenuator is set corresponding to the output of the gas excitation pulse laser oscillator. The attenuation rate can be determined in such a manner that the pulse energy integral value irradiated to the object to be processed becomes a predetermined value. However, the present invention is not limited thereto, and for example, the attenuation rate or the like can be determined such that the maximum value of one pulse of the pulsed laser light is kept constant. In the present invention, the second control is performed in accordance with the state in which the gas is deteriorated, so that the output value adjusted by the first control is lowered, and the attenuation rate of the variable attenuator is reduced. The second control is performed in accordance with the deterioration of the gas, and can be performed when the deterioration of the gas 201145396 ^/jyjpif reaches a predetermined state. Regarding the predetermined state at this time, in addition to setting one condition, two or more conditions may be set to perform the second control in stages. Further, after the deterioration of the gas reaches the predetermined condition, the output value adjusted by the first control may be continuously or stepwise decreased or decreased by the second control in accordance with the progress of the deterioration of the gas. The attenuation rate of the above variable attenuator. By the second control described above, it is possible to prevent the pulse waveform from being greatly increased and to prevent the laser annealing treatment from becoming uneven, and it is possible to satisfactorily crystallize the semiconductor thin film or the like. Further, by the second control, if the above-mentioned input adjusted by the first control is lowered to the lower limit of the mosquito or if the attenuation of the variable attenuator is reduced to the predetermined lower limit, It can be judged as a period of gas. The deterioration of the gas can be determined by various information. For example, the excitation pulse laser seam correction operation _ with the gas =: ===: the phase _ to determine = two time threshold (a) value, and borrow: two =, beyond the time threshold to carry out the above The second control. Run time ^ Control the flow control of the gas-excited laser punching seam. The discharge can be controlled by the gas excitation pulsed laser oscillator body, and the feedback voltage is controlled by the feedback. In this case, one or two or more voltage thresholds can be described, and the second control is performed by the actual discharge voltage of 201145396 D/jyopn exceeding the voltage threshold. The discharge voltage is determined by a control unit that controls the gas excitation pulse laser oscillator, so that it can be easily grasped. Further, the deterioration of the gas can be judged by the peak ratio j»2/pi obtained from the first wave + value P1 and the second peak value P2 of the pulse waveform irradiated to the object to be processed. Further, the first wave peak may be represented by the maximum south degree of the first peak group (the height of the first peak) which appears first, and the second wave peak may be the maximum height of the second wave group which appears after the first peak group ( The height of the second wave bee is shown. In a typical gas-excited laser, a relatively high first peak group will initially appear, and then a very small height will occur after a very small decrease in intensity (a maximum number of degrees of maximum height). 2 peak groups, thus roughly having two peak groups. Further, in the present invention, three or more peak groups may appear in one pulse. As described above, as the gas is deteriorated and the discharge voltage of the gas excitation pulse laser oscillator increases, and the pulse waveform changes, the peak ratio P2/P1 increases. In this case, i or two or more peak ratio thresholds may be set in advance for the peak ratio, and the second control may be performed by the actual peak ratio exceeding the peak ratio threshold. Further, the peak ratio can be measured by a pulse waveform of the pulsed laser light irradiated to the object to be processed by an appropriate pulse waveform measuring unit, and the second peak and the second peak can be extracted by image analysis or the like, according to the respective peaks. The size is used to calculate the above peak ratio. The calculation of the peak ratio can be performed by the control unit. In particular, in the control of the peak ratio, the pulsed laser light is suppressed to a predetermined value or less, and the laser beam can be irradiated to the object to be processed, thereby reducing each of the thunders.
D 射脈衝的照射不均。 本發财’被處理__未作_限定，但可 土用於以非晶韻_對象而結晶The irradiation of the D pulse is uneven. This Fortune' is processed __not defined, but can be used to crystallize with amorphous rhyme
[發明的效果] ㈣退人T ㈣制般，根據本發明’進行第1控制以便將自 衝雷麵器輸出的上述脈衝雷射光的輸出值 疋值’且欺該氣體激發脈衝雷射振盪器内的氣 體^化狀態’根據_定結果而進行第2控制使上述第 这卫制中所調整的上述輸&值降低、並且減小上述可變衰 =器的衰減率，因此使伴隨氣體的劣化的脈衝波形的變化 /’、，且降低每個脈衝雷射光的照射不均，從而可進行均 一的雷射退火處理。 易懂 明如下 為讓本發明之上述和其他目的、特徵和優點能更明顯 ，下文特舉較佳實施例，並配合所附圖式，作詳細說 【實施方式】 以下，根據圖式來對本發明的一實施形態進行說明。 圖1是說明相當於本發明的雷射退火處理裝置的準分 子雷射退火裝置1的概略圖。 本實施形態令，以平板顯示器TFT元件申所使用的基 板W為對象，該基板14中形成非晶矽薄膜14a作為被處 理體。非晶石夕薄膜14a藉由通常方法而形成於基板14的上 層。本發明中，非晶矽薄膜14a的形成方法未作特別限定。 該準分子雷射退火裝置1中，包括··氣體激發脈衝雷 11 201145396 射振盪器11’其輸出發光波長為308 nm、脈衝雷射的週期 為3Ό0 Ηζ的脈衝雷射光；以及输出控制部lla，其生成驅 動該氣體激發脈衝雷射振盪器11的脈衝信號。另外，本發 明中，自氣體激發脈衝雷射振盪器11輸出的脈衝雷射光的 波長或週期並不限定於上述。關於發光波長，例如可表示 240 mn〜358 nm的波長。該輸出控制部Ua包括中央處理 單兀（Central Processing Unit，CPU)及使該 CPU 動作的 程式、儲存該程式等的唯讀記憶體（Read_〇nlyMem〇ry， ROM)、成為作業區域的隨機存取記憶體（Rand〇m[Effects of the Invention] (4) In the case of the T (four) system, according to the present invention, 'the first control is performed so that the output value of the pulsed laser light outputted by the self-piercing laser beam device is depreciated' and the gas excitation pulse laser oscillator is deceived The gas control state in the inside is performed according to the result of the determination, and the above-mentioned value of the output and the value adjusted in the above-mentioned first manufacturing system is lowered, and the attenuation rate of the variable fading device is reduced, thereby causing the accompanying gas. The variation of the degraded pulse waveform /', and the uneven illumination of each pulsed laser light is reduced, so that a uniform laser annealing process can be performed. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. An embodiment of the invention will be described. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a quasi-molecular laser annealing apparatus 1 corresponding to a laser annealing treatment apparatus of the present invention. In the present embodiment, the substrate W used for the flat panel display TFT element is formed, and the amorphous germanium film 14a is formed as a processed body in the substrate 14. The amorphous slab film 14a is formed on the upper layer of the substrate 14 by a usual method. In the present invention, the method of forming the amorphous germanium film 14a is not particularly limited. The excimer laser annealing apparatus 1 includes: · gas excitation pulse ray 11 201145396 oscillating oscillator 11 ′ which outputs pulsed laser light having an emission wavelength of 308 nm and a pulse laser period of 3 Ό 0 ;; and an output control unit 11a It generates a pulse signal that drives the gas excitation pulse laser oscillator 11. Further, in the present invention, the wavelength or period of the pulsed laser light output from the gas excitation pulse laser oscillator 11 is not limited to the above. Regarding the light emission wavelength, for example, a wavelength of 240 mn to 358 nm can be expressed. The output control unit Ua includes a central processing unit (CPU) and a program for operating the CPU, a read-only memory (Read_〇nlyMem〇ry, ROM) for storing the program, and the like, and a randomized work area. Access memory (Rand〇m
Memory，RAM)、非揮發地保持資料的快閃記憶體等。非 揮發的記㈣巾儲存著肋生成_上述氣體激發脈衝雷 射振盡器11進行規定的輸出的脈衝健的動作參數等。 —於該賴激發脈衝雷射振㈣u巾，作為初始設定而 吸定為以規定的輸丨脈衝能量來輸錄衝雷射光。本 中輸出脈衝能量的值未作特別限定，例如可表示85〇 mJ/pulse 〜i050mJ/pulse〇 退火部lla上可控制地連接著對準分子雷射 部沪入仃控制的裝置控制部17,根據裝置控制 射振堡nYi 輸峻㈣llat生成使氣聽發脈衝雷 振簠器11的=:衝信號’此時決定氣體激發脈衝雷射 存該包括CPU及使該CPU動作的程式、儲 上迷ROM、RAM、快閃記憶體 201145396 專作為5己憶部17a而包合Λ 包含==包含本 發明中該㈣部的數量未作制❿3^力能’但本 來發揮作為本發明的控制部的功能，、可由—個控制部 氣贈it憶部i7a中，在初始蚊中，儲翻以由上述 乳體激發脈衝雷射振盪器u獲 :上迷 數、昭^t咸奴蚊的衰鱗的動作參 i密二魏理體的脈衝雷射光中的成為目標的脈衝能 置制且伴隨裝置的運行以參照所儲存的資料來對裝 而且’記憶部17a中儲存後述的波峰比的波峰比臨限 户且將於超出該;;皮峰比臨限值時所調整的放電電壓相對 於氣體激發脈衝雷射振m器11的降低量、可變衰減器的衰 減率的降低量轉為控制量將而加以儲存。 另外，本實施形態中，已對設定一個波峰比臨限值的 情況進行了朗’但亦可設定雜以上的波峰比臨限值， 並根據各臨限值來分別規定上述控制量。 而且，包括對上述氣體激發脈衝雷射振盪器η内補給 鹵氣（halogen gas)的氣體供給部21，該氣體供給部21 可控制地連接於上述裝置控制部17。裝置控制部17中， 13 201145396 jfjyjyn 對氣體激發脈衝雷射振盪器11的運行時間進行管理，設定 為每當運行時間經過規定時間，便使氣體供給部^動作而Memory, RAM), flash memory that keeps data non-volatile. The non-volatile (four) towel stores the rib generation _ the above-mentioned gas excitation pulse laser horn 11 performs a predetermined output pulse operation parameter and the like. - In the initial excitation, the excitation pulse laser vibration (four) u-ray is selected to record the laser beam with a predetermined pulse energy. The value of the output pulse energy in the present invention is not particularly limited, and for example, the device control unit 17 that can controllably connect the alignment molecular laser unit to the control unit 17 can be connected to the 85〇mJ/pulse to i050mJ/pulse〇 annealing portion 11a. According to the device control, the vibration of the nYi transmission (four) llat is generated to make the gas audible pulse lightning damper 11 =: rushing signal 'this time determines the gas excitation pulse laser to store the program including the CPU and the CPU, the storage fan The ROM, the RAM, and the flash memory 201145396 are exclusively used as the 5 memory unit 17a. Included == Including the number of the (four) parts in the present invention is not made, but the present invention is used as the control unit of the present invention. The function can be given to the i7a by the control unit. In the initial mosquito, the storage is turned over by the above-mentioned milk-excited pulsed laser oscillator. The target pulse can be set in the pulsed laser light of the action and the operation of the device is carried out with reference to the stored data, and the peak ratio of the peak ratio stored in the memory portion 17a is limited. The household will exceed this;; Adjusting voltage corresponding to a gas discharge excitation pulse laser oscillator to reduce the amount of 11 m, the amount of the variable attenuator decreases decay rate into a control amount will be saved. Further, in the present embodiment, the case where one peak ratio is set to the threshold value has been performed, but the peak ratio of the peak or more may be set, and the control amount is defined for each threshold value. Further, a gas supply unit 21 for supplying a halogen gas to the gas excitation pulse laser oscillator η is provided, and the gas supply unit 21 is controllably connected to the device control unit 17. In the device control unit 17, 13 201145396 jfjyjyn manages the operation time of the gas excitation pulse laser oscillator 11, and sets the gas supply unit to operate every time the operation time elapses.
將規定量的氣體補給至上述氣體激發脈衝雷射振盪器U 内。而且，亦可經由裝置控制部17而藉由操作人員的操作 來進行氣體的補給，而且，還可相應於氣體的劣化來補仏 氣體。 ^ 而且，自氣體激發脈衝雷射振盈器U輸出的脈衝雷射 光100如圖3所示，於丨脈衝中隨時間變化而具有兩個波 峰群（第1波峰、第2波峰），相對於具有最大高度的第i 波冷的波峰強度P1，第2波峰成為波峰強度P2。於初始 狀態下，波♦比P2/P1並不限定於本發明，例如，例示〇 % 以下。 於氣體激發脈衝雷射振盪器u内配置著藉由光電二 極體等構成的輸ih侧定部2〇,以輸人脈衝雷射光1〇〇的 一部分而對輸出值進行測定。另外，輸出值測定部20的構 成未，特別限定’可使用光電二極體等。輸出值測定部20 的測疋結果被發送至上述輸出控制部1 la。 ，於氣體激發脈衝雷射振堡器U的出射側配置著可變 衰減器12,於可變衰減器12的輸出側配置著由均質器 =a、鏡面13b、透鏡13c等構成的光學系統13。另外，本 實施形態中，已圖示可變衰減^ 12位於光學系統13中， 但^發明中，可變衰減器12亦可位於光學系統13外。可 變，減器12以規定的衰減率使脈衝f射光衰減後透過，從 而衰減率為可變。可變衰減器12可控制地連接於上述裝置 201145396 d /oyjpii 控制部17’由裝置控制部17根據齡而設定為規定的衰 ，率。於初始設定中便設定為規定的衰減率。另外，可變 衰，器的構成並不限定於本發明中的特定的構成，亦可改 變衰減率而使脈衝雷射光透過。衰減率的調整例如可藉由 介電體的角度調整等來進行。 光學系統13以對載置於可在水平方向（χ_γ方向） 上移動的平台15上的被處理體，照射脈衝雷射光100的方 式來導引脈衝雷射光。而且。光學系統13中，對脈衝雷射 光100進行整形，以使其成為規定的光束形狀（例如線光 束形狀）。該光束形狀被整形為已考慮了基板14的大 形狀。 平σ 15可利用移動裝置18 (示於圖2)而在水平方向 上移動，藉由使平台15相對於脈衝雷射光1〇〇相對地進行 1動:*可一邊對非晶石夕薄膜14a照射脈衝雷射光觸一 邊進行掃描。本發財，此時的掃描速度未作特別限定， 例如可例示1 mm/sec〜30 mm/sec ^上述移動裝置18可控 制地連接於上述裝置控制部17，藉由該裝置控制部17來 控制移動。 而且，準分子雷射退火裝置1中包括脈衝波形測定部 其自光學系統13取出脈衝雷射光的一部分並測定 脈衝波形。此時的取出位置為，於形成㈣光的光束之後， 上述均質器13a的脈衝雷射光出射方向的後方側。 ^另外，脈衝波形測定部16的構成未作特別規定，可使 用阿速光電二極體、雙平面（bi_planar)放電管、示波器 15 201145396 joscilloseGpe)等。該脈衝波形測定部i6的測定結果被發 ΐίΐΪ裝置控制部17。·裝置控制部17中接收該測定結 果並根據圖像分析等對脈衝波形進行解析，抽出如圖3所 示的第1波峰的波峰值Ρ1與第2波峰的波峰值ρ2，將ρ2/ρι 2波峰比而計算。而且，裝置控制部17可根據脈衝波形 來异出脈衝能量D •其次，一邊參照圖4的流程圖一邊對上述準分子雷射 退火裝置1中的退火處理方法進行朗。另外，以下的控 制順序藉由輸出控制部lla、裝置控制部17中所包含的程 式來執行。 首先，伴隨處理的開始，搬入形成著非晶矽薄膜14a 的基板14並將該基板14載置於平台15上（步驟sl)。通 常’準分子雷射退火裝置1包括進行環境機（真空環境 等）的處理室（未圖示），將基板14搬入至該處理室内進 行處理。 於裝置控制部17中’自記憶部17a讀出初始設定用的 動作參數並開始脈衝雷射光的照射（步驟s2)。亦即，自 氣體激發脈衝雷射振盪器11向輸出控制部lla發送控制指 令，使脈衝雷射光以規定的放電電壓而自氣體激發脈衝雷 射振盪器11輸出。而且，此時對可變衰減器12進行控制 而設定為規定的衰減率。 藉由上述輸出調整與可變衰減器的衰減率調整，非晶 矽薄膜14a的加工面以作為目標的脈衝能量而被照射有脈 衝雷射光。 201145396 圖3表示自氣體激發脈衝雷射振盪器11輸出的 ，衝雷^光驗舰形。圖3巾表轉體的濃度、輸出能 =放電電屋不同的脈衝雷射光的各波形。如圖3所示般， 二下傾向：若增大放電電壓則輸出能量增大，並且第 辦女的波較Ρ2才目對於第1波峰的波峰值P1而相對地 二θ站另方面’具有如下傾向：若減小放電電壓則輸出 月Γΐ"、’並且第2波峰的波峰值Ρ2相對於第1波峰的 波峰值Ρ1而相對地減小。 :氣體激發脈衝雷射振盪器u輸出的脈衝雷射光⑽ ^出值敎部2G來败輸出值。測定結果如上述般被 沾=出控制部113。自氣體激發脈衝雷射振盪器11輸出 =衝雷射光村魏減^ 12的伽下贱定的衰減率 ^且由光學系統13進行整形而被導入規定的光路並昭 =非㈣薄膜⑷。該整形或將脈衝雷射光導入規定的 二路的作用是藉由光學系統13的均f器m、鏡面別、 透鏡13c等的適當的光學構件來完成。 ，時’藉由—邊使平台15移動—邊蹄脈衝雷射光而 進仃脈衝雷射光的掃m，脈衝雷㈣丨⑼的一部分 被取出，由脈衝波糊定部16測定脈衝波形，且測定 被送至裝置控制部17。 於進行上述脈衝雷射光的照射時，自氣體激發脈衝雷 射振盧器η輸出的脈衝雷射光的輸出值由輸出值測定部 進仃測定後被送至輸出控制部lla，於輸出控制部lu 中’進打測定值是否為設定的輸出值關定。於輸出控制 17 201145396 規定的範圍來作為設定值，若超出該範圍 制疋為規格外.，.且進行反饋控制以將輸出值維持在規格 内（步驟⑴。根據圖5來說明該反饋控制的順序。以下 的控制藉由輸出控制部11a的程式來執行。 =該控制順序中，如上述般，由輸出值败部2〇測定 輸出後將測定結果送至輸出控制部lla(步驟叫。然後， 判定測^值是否在狀的規格内（步驟训>若測定值在 規格内（步㈣b，YES)，則結束處理。若測定值在規格 外（步驟s3b，NO)，貝，J進行是否超出規格的判定（步驟 s3c)。若超出規格（步驟s3c，卿），則減小施加至氣體 激發脈衝雷射缝器11的放電電壓以使輸崎低至規格 内為止（步驟s3d)。另-方面，若未超出規格（步輝s3c， NO)，則輸出成為小於規格，從而增大施加至氣體激發脈 衝雷射振ill 11敝電電壓贿輸㈣加至規格内為止 (步驟s3e)。於步驟S3d、S3e後，回到步驟s3b，若輸出 值在規格内則結束處理，若在規格外則重複進行調整放電 電壓的處理。另外，即便使放電電壓增加至預定的上限值 為止或降低至預定的下限值為止而輸出值亦不在規格内的 情況下，可視為發生某些錯誤或到達氣體的更換時期而令 止處理。 進行上述反饋控制，進而，於圖4所示的控制順序中， 調整振盪器輸出目標值與衰減器衰減率（步驟s4)。於初 始設定中’設定上述振盪器輸出目標值與衰減器衰減率目 標值’於裝置的初始運行中則無需進行該些調整。 18 201145396 進而’判定照射至基板14的a (步驟办具體而言，脈射=否在規定内 形測定部16來測定，測定結果\\^=形/脈衝波 Ϊ射，能量。於她制== 量密度。亦即形2=3的剖面積，算出脈衝能 為脈衝能量測定部的作用。另it皮本:定^ 二在 標值與衰減器衰減率進行V整’S4以對振盪器輸出目 的衰減率的調整:=:==== 規定内（步驟85，γρς〉日衡能量密度在 脈衝雨射捩#55 ，則轉向步驟S6。若於氣體激發 11的輸出調整範圍及可變衰減器12的衰 密度磁定内，則可作為錯誤 而、、、。束處S或可判定為氣體的更換時期。 16的於裝置控制部17中根據脈衝波形測定部 的波蜂值p'忿行糖’ _第1波峰中 酸i，自上、^ 波峰中的波峰值P2。_，算出比 並與某於測定Ϊ憶部…讀出預先設定的波峰比臨限值， 果的波峰比進行比較(步驟s7)。若基於 ζ 、、波峰比為所設定的波峰比臨限值以下（步驟 i回’職體物b程度為可接受的狀態，直 驟…中繼續進行處理直至處理結束為止（步 19 201145396 另一方面，於基於上述測定結果的波峰比超出波峰比 臨限值的情況下（步驟s7 ,超出設定值），氣體的劣化已 疋程度地進行，為了使該波+比為臨限值以下而將指令 輸出至上述輸出控制部lla以減小施加至氣體激發脈衝雷 射振盪H 11的放電電壓。藉由該輸出控制部lla進行的上 述反饋控制中，若於該步驟中決定放電電壓，則將藉由該 放電電壓而實際獲得的輸出值設為目標值（步驟s3)e輸 出值成為小於初始設定巾蚊的設定值，而為了對該輸出 值進行補充，於裝置控制部丨7巾進行調整以減小可變衰減 器12的衰減率並增大脈衝雷射光的透過的比例（步驟 s4)。上述調整量預先設定為控制量並儲存於記憶部⑺。 裝置控制部17參照儲存於記憶部17a的設定資料來進行上 述調整的控制。上述控财，主要是以使照射至基板14 的脈衝雷射光的能量錢成為蚊制对_整可變 減器的衰減率。 x /外’步驟s7 + ’當根據氣體的劣化來設定氣體激發 氏衝雷射振盪n的輸出調整及可變衰減器12的衰減率 時’亦可使氣體供給部21動作輯氣體激發脈衝雷射振盪 H補給氣體以改善氣體的劣化。亦即，依據氣體的劣化 ，進仃氣翻H而且’除上述控綱料，亦可藉由 疋期地補給氣體來抑制氣體的劣化，從而更均—地 射退火處理。 革 根據上述控制順序，可將脈衝雷射光的波峰比維持為 適备而進行處理，可減少每—脈衝的照射不均，從而可於 20 201145396 最佳的狀態下進行雷射退火，結果可獲得均一粒徑的多晶 石夕。 另外，本實施形態中，是根據脈衝波形的波峰比的變 化來判疋氣體的劣化的狀態，但本發明中亦可藉由其他方 法來判定氣體的劣化並進行第丨控制、第2控制，例如， 亦可根據施加至氣體激發脈衝雷射振盪器u的放電電壓 的變化來判定氣體的劣化。 以上，根據上述實施形態對本發明進行了說明，但本 發明並不p!定於上述說明的内容，只要不脫離本發明則可 進行適當的變更。 〜雖然本㈣已以較佳實施·露如上，然其並非用以 限^本發明’任何熟習此技藝者，在不脫離本發明之精神 内，當可作些許之更動與潤飾，因此本發明之保護 fe圍备視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 ’ 的概=是表示本發_雷射退讀理裝置的-實施形態 的』=?本發明的雷射退火處理裝置的-實掩形態 波峰射退火處理裝置+輪出義衝雷射光的 =示:發明的退火處理的控制順序的流程圖。 圖5疋表不對氣體激發雷射振盈 反饋控制的順序的流程圖。 _ ~調整的 21 201145396 ΚΛ1- 【主要元件符號說明】 1 準分子雷射退火裝置 2 :控制部 11 :氣體激發脈衝雷射振盪器 11a :輸出控制部 12 :可變衰減器 13 :光學系統 13a :均質器 13b :鏡面 13c :透鏡 14 :基板 14a :非晶矽薄膜 15 :平台 16 :脈衝波形測定部 17 :裝置控制部 17a :記憶部 18 :移動裝置 20 :輸出值測定部 21 :氣體供給部 100 :脈衝雷射光 si〜s8 :步驟 s3a〜s3e :步驟 22A predetermined amount of gas is supplied to the above-described gas excitation pulse laser oscillator U. Further, the gas can be replenished by the operation of the operator via the device control unit 17, and the gas can be supplemented in accordance with the deterioration of the gas. ^ Moreover, the pulsed laser light 100 output from the gas excitation pulse laser oscillator U is as shown in FIG. 3, and has two peak groups (first peak, second peak) with respect to time in the chirped pulse, as opposed to The peak intensity P1 of the ith wave having the maximum height, and the second peak becomes the peak intensity P2. In the initial state, the wave ratio P2/P1 is not limited to the present invention, for example, 〇% or less. An output side value is measured by a part of the input pulse laser light 1 配置 in the gas excitation pulse laser oscillator u, which is formed by a photodiode or the like. Further, the configuration of the output value measuring unit 20 is not particularly limited, and a photodiode or the like can be used. The result of the measurement by the output value measuring unit 20 is sent to the output control unit 1 la. The variable attenuator 12 is disposed on the exit side of the gas excitation pulse laser vibrating unit U, and the optical system 13 composed of the homogenizer=a, the mirror surface 13b, the lens 13c, and the like is disposed on the output side of the variable attenuator 12. . Further, in the present embodiment, the variable attenuation 12 is shown in the optical system 13, but in the invention, the variable attenuator 12 may be located outside the optical system 13. The variable reducer 12 attenuates the pulsed light at a predetermined attenuation rate and transmits it, so that the attenuation rate is variable. The variable attenuator 12 is controllably connected to the above-described device. 201145396 d /oyjpii The control unit 17' is set to a predetermined attenuation rate by the device control unit 17 depending on the age. It is set to the specified attenuation rate in the initial setting. Further, the configuration of the variable fading device is not limited to the specific configuration of the present invention, and the attenuation rate can be changed to transmit the pulsed laser light. The adjustment of the attenuation rate can be performed, for example, by adjusting the angle of the dielectric body or the like. The optical system 13 guides the pulsed laser light by irradiating the pulsed laser light 100 to the object to be processed placed on the stage 15 which is movable in the horizontal direction (χ_γ direction). and. In the optical system 13, the pulsed laser light 100 is shaped so as to have a predetermined beam shape (e.g., a line beam shape). The shape of the beam is shaped such that the large shape of the substrate 14 has been considered. The flat σ 15 can be moved in the horizontal direction by means of the moving device 18 (shown in Fig. 2), by making the platform 15 relatively move with respect to the pulsed laser light 1 :: * can be opposite to the amorphous slab film 14a The pulsed laser light is scanned while scanning. In the present invention, the scanning speed at this time is not particularly limited, and for example, 1 mm/sec to 30 mm/sec can be exemplified. The mobile device 18 is controllably connected to the device control unit 17, and is controlled by the device control unit 17. mobile. Further, the excimer laser annealing apparatus 1 includes a pulse waveform measuring unit that extracts a part of the pulsed laser light from the optical system 13 and measures the pulse waveform. The take-out position at this time is the rear side of the pulsed laser light emission direction of the homogenizer 13a after the light beam of the (four) light is formed. Further, the configuration of the pulse waveform measuring unit 16 is not particularly limited, and an A-speed photodiode, a bi-planar discharge tube, an oscilloscope, and the like may be used. The measurement result of the pulse waveform measuring unit i6 is transmitted to the device control unit 17. The device control unit 17 receives the measurement result, analyzes the pulse waveform based on image analysis or the like, and extracts the peak value Ρ1 of the first peak and the peak value ρ2 of the second peak as shown in FIG. 3, and ρ2/ρι 2 The peak ratio is calculated. Further, the device control unit 17 can generate the pulse energy D based on the pulse waveform. • Next, the annealing treatment method in the excimer laser annealing apparatus 1 is performed while referring to the flowchart of Fig. 4 . Further, the following control sequence is executed by the programs included in the output control unit 11a and the device control unit 17. First, with the start of the process, the substrate 14 on which the amorphous germanium film 14a is formed is carried and placed on the stage 15 (step sl). The "excimer laser annealing apparatus 1" generally includes a processing chamber (not shown) for performing an environmental machine (vacuum environment, etc.), and carries the substrate 14 into the processing chamber for processing. The device control unit 17 reads out the initial setting operation parameters from the memory unit 17a and starts the irradiation of the pulsed laser light (step s2). That is, the control signal is transmitted from the gas excitation pulse laser oscillator 11 to the output control unit 11a, and the pulsed laser light is output from the gas excitation pulse laser oscillator 11 at a predetermined discharge voltage. Further, at this time, the variable attenuator 12 is controlled to be set to a predetermined attenuation rate. By the above-described output adjustment and the attenuation rate adjustment of the variable attenuator, the processed surface of the amorphous germanium film 14a is irradiated with pulsed laser light with the target pulse energy. 201145396 Figure 3 shows the output from the gas-excited pulsed laser oscillator 11. Figure 3 Concentration of the swivel of the towel table, output energy = each waveform of the pulsed laser light of the discharge electric house. As shown in Fig. 3, the second tendency is: if the discharge voltage is increased, the output energy is increased, and the wave of the second female is smaller than the peak P1 of the first peak, and the second θ station has another There is a tendency that when the discharge voltage is decreased, the enthalpy ", and the peak value Ρ2 of the second peak is relatively decreased with respect to the peak value Ρ1 of the first peak. : The pulsed laser light (10) output from the gas excitation pulse laser oscillator u is out of the value 2G to defeat the output value. The measurement results were stained and discharged to the control unit 113 as described above. The output of the self-gas excitation pulsed laser oscillator 11 = the attenuation rate of the gamma ray of the laser ray illuminator ^ 12 is formed by the optical system 13 and is introduced into a predetermined optical path and is shown as a non-fourth film (4). This shaping or introduction of the pulsed laser light into a predetermined two-way operation is performed by an appropriate optical member such as the homogenizer m of the optical system 13, the mirror surface, and the lens 13c. When the platform 15 is moved, the platform 15 is moved, the laser beam is irradiated, and a part of the pulsed laser light is extracted. A part of the pulsed lightning (four) 丨 (9) is taken out, and the pulse waveform is determined by the pulse wave paste unit 16 and measured. It is sent to the device control unit 17. When the pulsed laser light is irradiated, the output value of the pulsed laser light output from the gas excitation pulse laser yoke η is measured by the output value measuring unit, and then sent to the output control unit 11a, and output control unit Whether the measured value is set to the set output value. The range specified by the output control 17 201145396 is used as the set value, and if it is outside the range, the feedback control is performed to maintain the output value within the specification (step (1). The feedback control is explained based on Fig. 5 The following control is executed by the program of the output control unit 11a. = In the control sequence, as described above, the output is measured by the output value failure unit 2, and the measurement result is sent to the output control unit 11a (step is called. If the measured value is within the specification (step (4) b, YES), the processing ends. If the measured value is outside the specification (step s3b, NO), Bay, J Whether or not the specification is exceeded (step s3c). If the specification is exceeded (step s3c, qing), the discharge voltage applied to the gas excitation pulse laser slitter 11 is decreased so that the input and output are as low as within the specification (step s3d). On the other hand, if the specification (step s3c, NO) is not exceeded, the output becomes smaller than the specification, thereby increasing the application to the gas excitation pulse laser ill 11 敝 electric voltage bribe (4) is added to the specification (step s3e) In the steps After S3d and S3e, the process returns to step s3b, and if the output value is within the specification, the process is terminated, and if the specification is outside the specification, the process of adjusting the discharge voltage is repeated. Further, even if the discharge voltage is increased to a predetermined upper limit value or is lowered to When the predetermined lower limit value and the output value are not within the specifications, it may be regarded as a certain error or a replacement period of the reaching gas, and the processing is terminated. The feedback control is performed, and further, in the control sequence shown in FIG. Adjust the oscillator output target value and the attenuator attenuation rate (step s4). In the initial setting, 'set the above oscillator output target value and the attenuator attenuation rate target value' in the initial operation of the device, it is not necessary to make these adjustments. 18 201145396 Further, it is determined that a is irradiated onto the substrate 14 (the procedure is specifically, the pulse is not measured in the predetermined internal shape measuring unit 16 and the measurement result is \\^= shape/pulse wave emission, energy. == Quantity density, that is, the cross-sectional area of shape 2=3, the calculation of the pulse energy is the function of the pulse energy measurement unit. The other it is: the second is the value of the attenuation value of the attenuator and the attenuation of the attenuator. Adjustment of output destination attenuation rate: =:==== Within the specified (step 85, γρς>day balance energy density is in pulse rain 捩#55, then go to step S6. If the output of the gas excitation 11 is adjusted and variable The attenuation of the attenuator 12 can be used as an error, and the beam S can be determined as the replacement period of the gas. The device control unit 17 calculates the wave bee value p' of the pulse waveform measuring unit.忿行糖' _ The first peak of the acid i, the peak value P2 in the peak of the ^ wave, the calculated ratio and the peak of the measured peak ratio, the peak of the peak The comparison is performed (step s7). If the peak ratio is below the threshold value based on the ζ and the peak ratio (step i back to the state where the body b degree is acceptable, the process continues until the process is processed until the process is completed. On the other hand, if the peak ratio based on the above measurement result exceeds the peak ratio threshold (step s7, the set value is exceeded), the deterioration of the gas is performed to the extent that the wave is + Output the command to the upper limit than the threshold The output control unit lla to reduce the excitation pulse is applied to the gas exit Ray H oscillation of the discharge voltage 11. In the feedback control by the output control unit 11a, when the discharge voltage is determined in this step, the output value actually obtained by the discharge voltage is set as the target value (step s3), and the output value becomes smaller than the initial value. The set value of the towel mosquito is set, and in order to supplement the output value, the device control unit adjusts to reduce the attenuation rate of the variable attenuator 12 and increase the ratio of the transmission of the pulsed laser light (step s4). . The above adjustment amount is set in advance as a control amount and stored in the storage unit (7). The device control unit 17 performs control of the above adjustment with reference to the setting data stored in the storage unit 17a. The above-mentioned money control is mainly to make the energy of the pulsed laser light irradiated onto the substrate 14 the attenuation rate of the mosquito-made dynamometer. x / outside 'step s7 + ' When the output adjustment of the gas excitation laser oscillation n and the attenuation rate of the variable attenuator 12 are set according to the deterioration of the gas, the gas supply portion 21 can also be operated to excite the gas excitation pulse The oscillation H is supplied to the gas to improve the deterioration of the gas. That is, depending on the deterioration of the gas, the helium gas is turned over and H is removed. In addition to the above-mentioned control material, the gas can be suppressed by replenishing the gas in a flood season, thereby more uniformly performing the annealing treatment. According to the above control sequence, the peak ratio of the pulsed laser light can be maintained and processed, and the uneven illumination per pulse can be reduced, so that the laser annealing can be performed under the optimal condition of 201114396, and the result can be obtained. Uniform particle size of polycrystalline stone. Further, in the present embodiment, the state in which the gas is deteriorated is determined based on the change in the peak ratio of the pulse waveform. However, in the present invention, the deterioration of the gas may be determined by another method, and the second control and the second control may be performed. For example, the deterioration of the gas can also be determined based on the change in the discharge voltage applied to the gas excitation pulse laser oscillator u. The present invention has been described above based on the above embodiments, but the present invention is not limited to the above description, and may be appropriately modified without departing from the invention. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The protection shall be subject to the definition of the patent application scope attached to it. [Simplified description of the drawing] 'The general value of the present invention is the embodiment of the present invention. </ RTI> The laser annealing processing device of the present invention = = The flow chart of the control sequence of the invented annealing process. Figure 5 is a flow chart showing the sequence of gas-excited laser vibration feedback control. _ ~Adjusted 21 201145396 ΚΛ1- [Main component symbol description] 1 Excimer laser annealing device 2: Control unit 11: Gas excitation pulse laser oscillator 11a: Output control unit 12: Variable attenuator 13: Optical system 13a : Homogenizer 13b: Mirror surface 13c: Lens 14: Substrate 14a: Amorphous film 15: Platform 16: Pulse waveform measuring unit 17: Device control unit 17a: Memory unit 18: Mobile device 20: Output value measuring unit 21: Gas supply Part 100: Pulsed laser light si~s8: Steps s3a~s3e: Step 22