JP2011228734A - Annealing device for semiconductor film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To secure uniformity of crystallization irrespective of fluctuation of laser output during laser annealing.SOLUTION: A laser annealing device of a semiconductor film irradiates a silicon film being a non-single crystal semiconductor film with a pulse laser beam to crystallize the non-single crystal semiconductor film. The device includes: a laser oscillator 1 outputting the pulse laser beam having a maximum peak height in a first peak; an optical system 4 guiding the pulse laser beam to the non-single crystal semiconductor film; a maximum peak height measuring portion measuring the maximum peak height in a pulse waveform of the pulse laser beam radiated onto the non-single crystal semiconductor film; and a control portion 8 receiving measuring results of the maximum peak height measuring portion and controlling laser pulse energy of the pulse laser beam outputted from the laser oscillator 1 or an attenuation rate of a variable attenuator 2 so that a maximum peak height becomes a predetermined height in the pulse waveform changing by changes in oscillation conditions of the laser oscillator 1.

Description

  The present invention relates to an apparatus for manufacturing a polycrystalline or single crystal semiconductor film used for a thin film transistor used in a pixel switch or a drive circuit of a liquid crystal display or an organic EL display.

  In a thin film transistor used for a pixel switch or a driving circuit of a liquid crystal display or an organic EL display, laser annealing using laser light is performed as a part of a manufacturing method of a low temperature process. In this method, a non-single crystal semiconductor film formed on a substrate is irradiated with a laser beam and locally heated and melted, and then the semiconductor thin film is crystallized into a polycrystal or a single crystal in the cooling process. . Since the crystallized semiconductor thin film has high carrier mobility, the performance of the thin film transistor can be improved. By the way, in the laser beam irradiation, it is necessary to perform a uniform process on the semiconductor thin film. In general, the laser beam output is controlled to be constant so that the irradiated laser beam has a stable irradiation energy. .

However, there are cases where constant crystallization characteristics cannot be obtained because the oscillation conditions of the laser oscillator change or the pulse waveform changes even if the laser beam output is constant due to laser gas degradation. FIG. 3 shows the change of the laser pulse waveform when the laser pulse energy is changed, and it can be seen that the profile of the pulse waveform itself changes due to the fluctuation of the laser pulse energy.
For this reason, conventionally, a method is generally used in which laser light is detected using a power meter or a photodiode, and the laser light output is controlled so that the energy integrated value of the laser light waveform is constant.
In addition, the ratio of a plurality of maximum values in the pulse waveform of the laser beam is obtained, and when this ratio exceeds a predetermined value, the amount of excitation gas injected into the laser gas enclosure or charge / discharge from the power source A pulse gas laser oscillation device that controls at least one of voltage values supplied to a circuit has been proposed (see Patent Document 1).

Japanese Patent Laid-Open No. 10-12549

Since the conventional method and apparatus are configured as described above, the following problems arise.
1. When a halogen gas is injected as a laser gas, the laser oscillation becomes unstable until the laser gas composition ratio is stabilized.
2. As the halogen gas composition ratio increases, the laser pulse energy stability decreases.
3. A certain amount of time is required for “the ratio between the maximum values falls within a predetermined range”.
4). There is a contradiction between “making the ratio between the maximum values fall within a predetermined range” and stable oscillation with less energy fluctuation of the laser.
5). Due to the influence of beam divergence and the like, the original pulse waveform of the laser oscillator is different from the pulse waveform irradiated to the irradiated object.

  The present invention has been made in order to solve the above-described problems of the prior art, and is a semiconductor film capable of stably obtaining laser light energy contributing to crystallization and obtaining a semiconductor thin film having a certain crystallinity. An object is to provide a laser annealing apparatus.

That is, of the semiconductor film laser annealing apparatus of the present invention, the first present invention is a semiconductor film for irradiating a silicon film which is a non-single-crystal semiconductor film with pulsed laser light to crystallize the non-single-crystal semiconductor film. In the laser annealing equipment of
A laser oscillator that outputs a pulsed laser beam having a maximum peak height at a first peak; an optical system that guides the pulsed laser beam to the non-single-crystal semiconductor film; and the pulsed laser irradiated to the non-single-crystal semiconductor film A maximum peak height measurement unit for measuring a maximum peak height in a pulse waveform of light, and a measurement result of the maximum peak height measurement unit in response to a measurement result of the oscillation condition of the laser oscillator. And a control unit that controls the laser pulse energy of the pulsed laser light output from the laser oscillator so that the peak height becomes a predetermined height.

A semiconductor film laser annealing apparatus according to a second aspect of the present invention is a semiconductor film laser annealing apparatus that irradiates a silicon film, which is a non-single crystal semiconductor film, with a pulse laser beam to crystallize the non-single crystal semiconductor film.
A laser oscillator that outputs a pulsed laser beam having a maximum peak height at a first peak; a variable attenuator that adjusts an attenuation factor of the pulsed laser beam; and an optical system that guides the pulsed laser beam to a non-single-crystal semiconductor film; A maximum peak height measuring unit for measuring a maximum peak height in a pulse waveform of the pulsed laser light irradiated on the non-single-crystal semiconductor film, and receiving the measurement result of the maximum peak height measuring unit, the laser And a control unit that controls an attenuation factor of the variable attenuator so that the maximum peak height becomes a predetermined height in a pulse waveform that changes according to a change in an oscillation condition of the oscillator.

  In addition, the said control part may control both the pulse laser beam energy in the said laser oscillator, and the attenuation factor of the said variable attenuator.

That is, the semiconductor film laser annealing apparatus of the third aspect of the present invention is a semiconductor film laser annealing apparatus for irradiating a silicon film, which is a non-single crystal semiconductor film, with a pulsed laser beam to crystallize the non-single crystal semiconductor film. ,
A laser oscillator that outputs a pulsed laser beam having a maximum peak height at a first peak; a variable attenuator that adjusts an attenuation factor of the pulsed laser beam; and an optical system that guides the pulsed laser beam to a non-single-crystal semiconductor film; A maximum peak height measuring unit for measuring a maximum peak height in a pulse waveform of the pulsed laser light irradiated on the non-single-crystal semiconductor film, and receiving the measurement result of the maximum peak height measuring unit, the laser Controls the laser pulse energy of the pulsed laser light output from the laser oscillator and the attenuation rate of the variable attenuator so that the maximum peak height becomes a predetermined height in the pulse waveform that changes due to changes in the oscillation conditions of the oscillator And a control unit.

  According to a fourth aspect of the present invention, there is provided the laser annealing apparatus for a semiconductor film according to any one of the first to third aspects, wherein the maximum peak height measuring unit includes a beam splitter disposed in an optical path of the pulse laser beam. A pulse waveform detector that detects the waveform of a part of the pulse laser beam extracted by the beam splitter, and a maximum peak height determiner that determines the maximum peak height from the pulse waveform detected by the pulse waveform detector It is characterized by providing.

  According to the present invention, by maintaining the maximum peak height of the laser light waveform at a predetermined height, the crystal characteristics of the semiconductor film irradiated with the laser light become constant. The pulse width in the pulse waveform is usually 1000 nsec or less, and preferably 500 nsec or less. However, the present invention is not limited to a specific pulse width. The predetermined height of the pulse waveform can be selected as appropriate, but is set so that the crystal characteristics are constant and of good quality. Usually, a range is defined as a predetermined height, and control is performed so that the maximum peak height of the pulse waveform falls within this range.

  FIG. 4 shows the maximum peak height optimum for crystallization at the laser irradiation position and the energy density optimum for crystallization (by laser power meter measurement) with respect to the laser pulse energy. As is clear from the figure, the optimum energy density varies depending on the laser pulse energy. Even if the pulse waveform integral value is controlled to be constant, if the laser pulse energy fluctuates, it is optimal for crystallization. It can be seen that it is not possible to maintain the proper conditions. On the other hand, at the maximum peak height, the optimum maximum peak height is substantially constant even if the laser pulse energy is different. By making the maximum peak height of the waveform constant, even if the laser pulse energy varies. An optimum state for crystallization can be maintained. In addition, whether it is optimal for crystallization can be determined by, for example, observation of the crystal grain size with an electron microscope.

  FIG. 5 shows the relationship between laser pulse energy (measured by a power meter or energy meter), pulse area (pulse waveform integrated value), and maximum peak height. As can be seen from the figure, the laser pulse energy and the maximum peak height are not in a proportional relationship, and even if the laser pulse energy of the irradiated laser light is constant, it cannot be maintained in an optimum state for crystallization.

  According to the present invention, the maximum peak height of the pulse waveform is adjusted to a predetermined height by adjusting the laser pulse energy of the pulsed laser light output from the laser oscillator and the energy of the laser light while measuring the maximum peak height. Can be accurately maintained. As a method for adjusting the output energy, adjustment can be performed by adjusting the amount of injection excitation gas in the laser oscillator, adjusting the discharge voltage value in the laser oscillator, or the like. Further, the energy adjustment of the pulsed laser beam after the output can also be performed using a variable attenuator that can adjust the attenuation rate of the pulsed laser beam output from the laser oscillator. The variable attenuator is not limited to a specific one as long as the attenuation factor with respect to the laser beam can be appropriately changed.

Note that, as a laser annealing method for a semiconductor film, in the laser annealing method for performing an annealing process by irradiating a non-single crystal semiconductor film with a pulse laser beam, a maximum peak height of the pulse waveform of the laser beam is set to a predetermined height. Thus, energy control of the pulse laser beam can be performed.
Further, as a laser annealing method of the semiconductor film, the maximum peak height of the pulse waveform of the laser beam is measured, and the output energy or / and after the output of the pulse laser beam so that the maximum peak height becomes a predetermined height. The energy of the pulse laser beam can be adjusted.

As described above, the present invention has the following effects.
1. Since the laser irradiation energy density is controlled by the maximum peak height of the pulse waveform having a high correlation with the crystal characteristics, a constant crystallization characteristic can always be obtained.
2. Even if the pulse waveform changes due to changes in the oscillation conditions of the laser oscillator, a constant crystallization characteristic can always be obtained.
3. Even if the output (W) is constant due to deterioration of the laser gas, when the pulse waveform changes, the laser irradiation energy density is controlled by the maximum peak height of the pulse waveform that is highly correlated with the crystal characteristics. Certain crystallization characteristics are obtained.

It is a figure showing the outline of the laser annealing device in one embodiment of the present invention. Similarly, it is a flowchart showing a procedure for maintaining an optimum state for crystallization. It is a graph which shows the change of a laser pulse waveform at the time of changing laser pulse energy. It is a graph which shows the energy density and maximum peak height optimal for crystallization with respect to laser pulse energy. It is a figure which shows the relationship between the pulse energy density with respect to laser pulse energy, and the maximum peak height.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
The laser neil processing apparatus includes a laser oscillator 1 that outputs gas laser light. In the laser oscillator 1, the laser light output can be adjusted by adjusting the amount of injected gas and the discharge voltage. As the laser oscillator 1, for example, a Coherent excimer laser oscillator LSX315C (wavelength 308 nm, repetition frequency 300 Hz) can be used.

  A variable attenuator 2 is disposed in the optical path from which the laser beam 10 output from the laser oscillator 1 is emitted. The variable attenuator 2 is composed of an attenuator optical element whose transmittance changes according to the incident angle of the laser beam, and the attenuation factor of the laser beam passing through the variable attenuator 2 can be adjusted. The adjustment of the attenuation factor in the variable attenuator 2 can be performed by the variable attenuator control unit 3, and the variable attenuator control unit 3 can be configured by, for example, a CPU and a program for operating the CPU.

An optical system 4 in which an optical member such as a homogenizer is disposed is provided on the output side optical path of the variable attenuator 2, and the optical system 4 converts the laser light 10 into a line beam having a length of 465 mm and a width of 0.4 mm, for example. To shape.
A part of the laser beam 10 guided by the optical system 4 is extracted by the beam splitter 5, and most of the laser beam is transmitted through the beam splitter 5 and irradiated onto the object 6. As the object 6 to be processed, for example, an a-Si film having a thickness of 50 nm is targeted.

The laser beam 10 a extracted from the beam splitter 5 is input to the pulse waveform detection means 7. The pulse waveform detector 7 detects the pulse waveform of the laser beam 10a and corresponds to a pulse waveform detector of the present invention. For example, a Hamamatsu photonics biplanar photoelectric tube (type Rl193U-52) is used as the pulse waveform detection means 7.
The result detected by the pulse waveform detection means 7 is output to the control unit 8. The control unit 8 includes a CPU, a program for operating the CPU, a storage unit that stores data related to a predetermined maximum peak height of the pulse waveform in a nonvolatile manner, and the like. The control unit 8 determines the maximum peak height of the waveform from the detection result in the pulse waveform detection means 7. Therefore, the control unit 8 has a function as a maximum peak height determination unit, and constitutes the maximum peak height measurement unit of the present invention in cooperation with the pulse waveform detection means 7. The control unit 8 can control the output of the laser oscillator 1 and can issue a control command to the variable attenuator control unit 3.

Next, the operation of the laser annealing apparatus will be described.
The laser beam 10 is output from the laser oscillator 1 according to the initially set output. The oscillation energy of the laser oscillator 1 is controlled by a built-in energy meter. The value of the energy meter is proportional to the integral value of the pulse waveform.

The laser beam 10 reaches the variable attenuator 2. The variable attenuator 2 is controlled so that the laser beam 10 passes with the attenuation rate initially set by the variable attenuator controller 3. An optimum irradiation energy density for crystallizing the workpiece 6 is set by the variable attenuator 2.
The laser light attenuated at a predetermined attenuation rate is shaped into a band shape by the optical system 4 and reaches the beam splitter 5. Laser light that passes through the beam splitter 5 is irradiated onto the object 6 to be subjected to laser annealing. The laser beam 10a extracted by the beam splitter 5 reaches the pulse waveform detection means 7, and information relating to the detected pulse waveform is output to the control unit 8.

Below, the control procedure in the control part 8 is demonstrated based on FIG.
First, in step 1, the pulse waveform is detected as described above, and the detection result is output to the control unit 8 (step s1).
The controller 8 determines the maximum peak height in the waveform from the detected pulse waveform (step s2). Normally, as shown in FIG. 3, since the first peak in the waveform is the maximum peak, it can be regarded as the maximum peak height by determining the first peak height.

Subsequently, the control unit 8 reads the maximum peak height data in a predetermined range stored in the storage unit and compares it with the maximum peak height determined (detected) in the above (step s3). Note that the maximum peak height in the predetermined range is stored in advance in the storage unit. The maximum peak height in the predetermined range may be set with different data depending on the type of the object 6 to be processed.
In the above comparison, when the detected maximum peak height is within the maximum peak height within the predetermined range (step s3, YES), the current laser beam 10 has the maximum peak height optimum for crystallization. Then, the laser light waveform is continuously detected (to step s1). The repeated detection of the laser waveform may be performed continuously or at a predetermined interval.

When the detected maximum peak height is not within the predetermined range (step s3, NO), laser output adjustment is performed.
The output adjustment in the laser oscillator 1 is adjusted by the discharge voltage. When the detected maximum peak height is higher than the predetermined range, the control unit 8 adjusts the discharge voltage of the laser oscillator 1 so that the output is reduced and the maximum peak height is within the predetermined range, while detecting the maximum peak height. When the maximum peak height is lower than the predetermined range, the laser oscillator 1 is adjusted so that the output is increased and the maximum peak height is within the predetermined range. The adjustment amount can be determined based on the amount by which the detected maximum peak height is out of the predetermined range.
After the adjustment, the laser light waveform is continuously detected (to step s1) until the laser irradiation process ends (step s5, YES).

As described above, even when the output of the laser beam fluctuates, by maintaining the maximum peak height of the pulse waveform at a predetermined value, the laser annealing process is performed in an optimum state for crystallization regardless of the shape of the pulse waveform. Can always be performed and constant crystals are obtained.
In the above control step, it has been described that the output is adjusted by the laser oscillator 1 in order to adjust the maximum peak height of the pulse waveform. However, by adjusting the attenuation factor in the variable attenuator 2, the pulse waveform is adjusted. The maximum peak height of the pulse waveform may be adjusted by both adjusting the output of the laser oscillator 1 and adjusting the attenuation factor of the variable attenuator 2.
As mentioned above, although this invention was demonstrated based on the said embodiment, this invention is not limited to the content of the said description, As long as it does not deviate from the range of this invention, an appropriate change is possible.

DESCRIPTION OF SYMBOLS 1 Laser oscillator 2 Variable attenuator 3 Variable attenuator control part 4 Optical system 5 Beam splitter 6 To-be-processed object 7 Pulse waveform detection means 8 Control part

Claims (4)

In a laser annealing apparatus for a semiconductor film that irradiates a silicon film, which is a non-single crystal semiconductor film, with a pulsed laser beam to crystallize the non-single crystal semiconductor film,
A laser oscillator that outputs a pulsed laser beam having a maximum peak height at a first peak; an optical system that guides the pulsed laser beam to the non-single-crystal semiconductor film; and the pulsed laser irradiated to the non-single-crystal semiconductor film A maximum peak height measurement unit for measuring a maximum peak height in a pulse waveform of light, and a measurement result of the maximum peak height measurement unit in response to a measurement result of the oscillation condition of the laser oscillator. A laser annealing apparatus for a semiconductor film, comprising: a control unit that controls a laser pulse energy of a pulse laser beam output from the laser oscillator so that a peak height becomes a predetermined height. In a laser annealing apparatus for a semiconductor film that irradiates a silicon film, which is a non-single crystal semiconductor film, with a pulsed laser beam to crystallize the non-single crystal semiconductor film,
A laser oscillator that outputs a pulsed laser beam having a maximum peak height at a first peak; a variable attenuator that adjusts an attenuation factor of the pulsed laser beam; and an optical system that guides the pulsed laser beam to a non-single-crystal semiconductor film; A maximum peak height measuring unit for measuring a maximum peak height in a pulse waveform of the pulsed laser light irradiated on the non-single-crystal semiconductor film, and receiving the measurement result of the maximum peak height measuring unit, the laser A semiconductor film laser, comprising: a control unit that controls an attenuation factor of the variable attenuator so that the maximum peak height becomes a predetermined height in a pulse waveform that changes according to a change in an oscillation condition of an oscillator. Annealing equipment. In a laser annealing apparatus for a semiconductor film that irradiates a silicon film, which is a non-single crystal semiconductor film, with a pulsed laser beam to crystallize the non-single crystal semiconductor film,
A laser oscillator that outputs a pulsed laser beam having a maximum peak height at a first peak; a variable attenuator that adjusts an attenuation factor of the pulsed laser beam; and an optical system that guides the pulsed laser beam to a non-single-crystal semiconductor film; A maximum peak height measuring unit for measuring a maximum peak height in a pulse waveform of the pulsed laser light irradiated on the non-single-crystal semiconductor film, and receiving the measurement result of the maximum peak height measuring unit, the laser Control the laser pulse energy of the pulse laser beam output from the laser oscillator and the attenuation rate of the variable attenuator so that the maximum peak height is a predetermined height in the pulse waveform that changes due to changes in the oscillation conditions of the oscillator A laser annealing apparatus for a semiconductor film.   The maximum peak height measurement unit includes a beam splitter disposed in an optical path of the pulse laser beam, a pulse waveform detection unit that detects a waveform of a part of the pulse laser beam extracted by the beam splitter, and the pulse waveform 4. The laser annealing apparatus for a semiconductor film according to claim 1, further comprising a maximum peak height determination unit that determines a maximum peak height from a pulse waveform detected by the detection unit.

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