WO2011129373A1 - 光反射性異方性導電接着剤及び発光装置 - Google Patents

光反射性異方性導電接着剤及び発光装置 Download PDF

Info

Publication number
WO2011129373A1
WO2011129373A1 PCT/JP2011/059194 JP2011059194W WO2011129373A1 WO 2011129373 A1 WO2011129373 A1 WO 2011129373A1 JP 2011059194 W JP2011059194 W JP 2011059194W WO 2011129373 A1 WO2011129373 A1 WO 2011129373A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
reflective
anisotropic conductive
conductive adhesive
particles
Prior art date
Application number
PCT/JP2011/059194
Other languages
English (en)
French (fr)
Inventor
秀次 波木
士行 蟹澤
英明 馬越
明 石神
Original Assignee
ソニーケミカル&インフォメーションデバイス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニーケミカル&インフォメーションデバイス株式会社 filed Critical ソニーケミカル&インフォメーションデバイス株式会社
Priority to US13/640,784 priority Critical patent/US8916894B2/en
Priority to EP11768894.5A priority patent/EP2560198A4/en
Priority to CN201180018769.0A priority patent/CN102859673B/zh
Priority to KR1020117015024A priority patent/KR20130049689A/ko
Publication of WO2011129373A1 publication Critical patent/WO2011129373A1/ja
Priority to HK13105913.8A priority patent/HK1178320A1/zh
Priority to US14/543,550 priority patent/US9260634B2/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
    • C08K2003/0831Gold
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2237Oxides; Hydroxides of metals of titanium
    • C08K2003/2241Titanium dioxide
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2296Oxides; Hydroxides of metals of zinc
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/24Acids; Salts thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/02Fibres or whiskers
    • C08K7/04Fibres or whiskers inorganic
    • C08K7/08Oxygen-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/04Ingredients treated with organic substances
    • C08K9/06Ingredients treated with organic substances with silicon-containing compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/13198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298Fillers
    • H01L2224/13299Base material
    • H01L2224/133Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205Shape
    • H01L2224/32057Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01056Barium [Ba]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01081Thallium [Tl]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10157Shape being other than a cuboid at the active surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials

Definitions

  • the present invention relates to a light-reflective anisotropic conductive adhesive used for anisotropically conductive connection of a light-emitting element to a wiring board, and a light-emitting element using the light-reflective anisotropic conductive adhesive.
  • the present invention relates to a light emitting device that is mounted on.
  • LED elements such as light emitting diode (LED) elements
  • 3 to 5 show structural examples of old-type light emitting devices.
  • the LED element 33 is bonded to the substrate 31 with a die bond adhesive 32, and the p electrode 34 and the n electrode 35 on the upper surface of the LED element 33 are bonded with a gold (Au) wire 37. Wire bonding is performed by silver plating 36. Thereby, the LED element 33 and the board
  • the light emitting device seals the entire LED element 33 with a resin such as a transparent mold resin (not shown), but the connection of the gold wire 37 depends on the difference in linear expansion coefficient between the resin and the LED element 33 and the gold wire 37. Separation may occur in the portion, or an electrical connection failure may occur due to the disconnection of the gold wire 37.
  • a resin such as a transparent mold resin
  • such a light emitting device is required to maintain the light emission efficiency (light extraction efficiency) by suppressing the reduction in the reflectance of the light emitted from the LED element.
  • gold electrodes are usually used as the p electrode 34 and the n electrode 35 of the LED element 33.
  • the gold electrode or the gold wire absorbs light having a wavelength of 400 to 500 nm emitted to the upper surface side, and the die bond adhesive 32 absorbs the light emitted downward.
  • Such light absorption reduces the light emission efficiency (light extraction efficiency) of the LED element 33.
  • the bonding process using the die-bonding adhesive 32 is based on oven curing, there is a problem that it takes time to manufacture.
  • a conductive paste 37 typified by a silver paste is used.
  • a p-electrode 34 and an n-electrode 35 on the lower surface of the LED element 33 and a silver-plated portion 36 on the substrate 31. are electrically connected.
  • the conductive paste 37 has a weak adhesive force, reinforcement with the sealing resin 38 is required.
  • light may be diffused or absorbed inside the conductive paste 37, thereby reducing the light emission efficiency of the LED element 33.
  • an anisotropic conductive adhesive (ACP) or an anisotropic conductive adhesive film (ACP) is cured, and the LED element and the substrate are connected and fixed and electrically joined.
  • Patent Document 1 describes a method of flip-chip mounting an LED element. Further, for example, in the light emitting device shown in FIG. 5, the p-electrode 34 and the n-electrode 35 on the lower surface of the LED element 33 and the substrate 31 are electrically bonded by flip chip mounting using a commercially available anisotropic conductive adhesive 39. It is a thing. In this flip chip mounting technique, bumps 40 are formed on the p electrode 34 and the n electrode 35, respectively.
  • a light reflection layer is provided on the LED element by a metal vapor deposition layer or the like so as to be insulated from the p electrode and the n electrode.
  • emitted from the LED element is suppressed, and luminous efficiency is maintained.
  • the technique of Patent Document 1 has a problem that the number of manufacturing steps of the light emitting device is increased and an increase in cost is inevitable.
  • Au or Ni used as conductive particles dispersed in the binder of ACP exhibits brown or dark brown, and the imidazole that the binder usually contains
  • the ACP binder exhibits an overall brown color due to the system latent curing agent exhibiting a brown color, thereby absorbing light. As a result, the light emission efficiency of the LED element 33 decreases.
  • the ACP uses an epoxy resin as a binder resin, but the ACP using the epoxy resin increases the conduction resistance and peels off the joint surface due to an internal stress based on a difference in thermal expansion coefficient with the connection substrate accompanying a temperature change. , Cracks and the like were generated. For this reason, reliability such as resistance to reflow of lead-free solder, resistance to thermal shock, and resistance to corrosion phenomenon of vapor deposition wiring when used and stored in a high temperature and high humidity atmosphere may be lowered.
  • the present invention has been proposed in view of such a conventional situation, and a light emitting element such as an LED element is flip-chip mounted on a wiring board using an anisotropic conductive adhesive, resulting in a manufacturing cost.
  • a light-emitting device that maintains the light-emitting efficiency of a light-emitting element without providing such a light reflection layer on the LED element, the object is to prevent the occurrence of cracks in the anisotropic conductive adhesive and to obtain high conduction reliability It is.
  • the inventors of the present invention have found that the occurrence of cracks can be prevented by making the light-reflective insulating particles added to the anisotropic conductive adhesive into a needle-like shape.
  • the present invention relates to a light-reflective anisotropic conductive adhesive used for anisotropically conductively connecting a light-emitting element to a wiring board, comprising a thermosetting resin, conductive particles, and light-reflective needle-like insulation. It is characterized by containing particles.
  • the present invention is characterized in that the light emitting element is mounted on the wiring board by the flip chip method through such a light reflective anisotropic conductive adhesive.
  • the light-reflective anisotropic conductive adhesive in the light-reflective anisotropic conductive adhesive can be obtained by adding light-reflective needle-like insulating particles to the anisotropic conductive adhesive. Generation of cracks can be prevented and high conduction reliability can be obtained.
  • FIG. 1A is a cross-sectional view of light-reflective conductive particles
  • FIG. 1B is a cross-sectional view of light-reflective conductive particles
  • FIG. 2 is a cross-sectional view of the light-emitting device in this embodiment.
  • FIG. 3 is a cross-sectional view of a conventional light emitting device.
  • FIG. 4 is a cross-sectional view of a conventional light emitting device.
  • FIG. 5 is a cross-sectional view of a conventional light emitting device.
  • the light-reflective anisotropic conductive adhesive in the present embodiment is an adhesive used for anisotropically connecting an LED element, which is a light-emitting element, to a wiring board, and includes a thermosetting resin composition, It contains conductive particles and light reflective acicular insulating particles.
  • the light-reflective acicular insulating particles are characterized by having an acicular shape having an aspect ratio within a predetermined range as will be described later.
  • the thermosetting resin composition contains spherical particles, cracks are generated from the interface between the spherical particles and the thermosetting resin composition due to internal stress of the thermosetting resin composition when the stretchability decreases with temperature change. There is a case.
  • electrical_connection reliability will be impaired. For this reason, the light-reflective anisotropic conductive adhesive needs to have excellent toughness.
  • the light-reflective anisotropic conductive adhesive in the present embodiment needle-shaped light-reflective insulating particles having an aspect ratio in a predetermined range are added to the thermosetting resin composition.
  • the acicular light-reflective insulating particles arranged in random directions propagate and absorb the internal stress of the thermosetting resin composition accompanying the temperature change in the acicular crystal.
  • the toughness of the thermosetting resin composition can be increased.
  • the light-reflective anisotropic conductive adhesive exhibits excellent toughness, and can suppress generation of cracks and peeling of the adhesive surface even when the thermosetting resin composition expands and contracts due to temperature change. .
  • the light-reflective needle-like insulating particles are made of a white needle-like inorganic compound and reflect light incident on the light-reflective anisotropic conductive adhesive to the outside.
  • the light-reflective needle-like insulating particles themselves exhibit white color, the wavelength dependence of the reflection characteristics with respect to visible light can be reduced, and visible light can be efficiently reflected.
  • the light-reflective anisotropic conductive adhesive in the present embodiment is a particle composed of an inorganic compound that exhibits white color and has an acicular shape with an aspect ratio in a predetermined range (hereinafter referred to as “white acicular inorganic material”).
  • white acicular inorganic material an inorganic compound that exhibits white color and has an acicular shape with an aspect ratio in a predetermined range.
  • Examples of the white acicular inorganic particles include acicular shapes such as titanate whiskers such as zinc oxide whisker, titanium oxide whisker, and potassium titanate whisker, aluminum borate whisker, and wollastonite (kaolin silicate acicular crystals). Mention may be made of inorganic compounds. Whisker is a crystal grown in a needle shape by a special manufacturing method, and since there is no disorder in the crystal structure, it has an advantage that it is rich in elasticity and hardly deforms. Since these inorganic compounds exhibit white color in a light emitting device that emits visible light, the wavelength dependency of the reflection characteristics with respect to visible light is small and the visible light is easily reflected.
  • acicular shapes such as titanate whiskers such as zinc oxide whisker, titanium oxide whisker, and potassium titanate whisker, aluminum borate whisker, and wollastonite (kaolin silicate acicular crystals).
  • inorganic compounds is a crystal grown in a needle shape by a special manufacturing method, and since there is no disorder in the crystal
  • the zinc oxide whisker has a high whiteness and is a catalyst for photodegradation even when photocuring of the cured product of the thermosetting resin composition in the cured anisotropic conductive adhesive is concerned. It is particularly preferable because it has no property.
  • the fiber diameter is preferably 5 ⁇ m or less.
  • the aspect ratio of the white needle-like inorganic particles made of single needle crystals is preferably greater than 10 and less than 35, and particularly preferably greater than 10 and less than 20.
  • the aspect ratio of the white needle-like inorganic particles is larger than 10, the internal stress of the thermosetting resin can be sufficiently propagated and absorbed.
  • the aspect ratio of the white needle-like inorganic particles is less than 35, the needle-like crystals are less likely to be broken and can be uniformly dispersed in the thermosetting resin. Connection is not hindered. When this aspect ratio is less than 20, the dispersibility in the thermosetting resin can be further improved.
  • thermosetting resin composition Since the toughness of the thermosetting resin composition can be increased by adding white needle-like inorganic particles having an aspect ratio of more than 10 and less than 35 to the thermosetting resin composition, the light reflecting anisotropy Even if the conductive adhesive expands and contracts, it is possible to suppress the peeling or cracking of the adhesive surface.
  • the white needle-like inorganic particles instead of such a single needle-like crystal, for example, a shape formed by combining the center and apex of the tetrahedron, such as Tetrapod (registered trademark), etc.
  • a crystal having a plurality of needle-like shapes may be used.
  • the white needle-like inorganic particles of double needle crystals are superior in that they have a higher thermal conductivity than the white needle-like inorganic particles of single needle crystals, but they have a bulkier crystal structure than single needle crystals. It is necessary to be careful not to damage the substrate or the joined part of the element by the needle-like part during thermocompression bonding.
  • the acicular white inorganic particles may be treated with a silane coupling agent, for example. Dispersibility in the thermosetting resin composition can be improved by treating the acicular white inorganic particles with the silane coupling agent. For this reason, the acicular white inorganic particle processed with the silane coupling agent can be mixed in the thermosetting resin composition uniformly in a short time.
  • the white needle-like inorganic particles have a refractive index (JIS K7142) that is preferably larger than the refractive index of the cured product of the thermosetting resin composition (JIS K7142), more preferably at least about 0.02. preferable. This is because if the difference in refractive index is small, the reflection efficiency at the interface between them decreases. That is, as the white needle-like inorganic particles, those that are light-reflective and insulating inorganic particles whose refractive index is less than or equal to the refractive index of the thermosetting resin composition to be used, such as SiO2. Not applicable.
  • the content is preferably 1 to 50% by volume (Vol%), more preferably 5 to 25% by volume, based on the thermosetting resin composition.
  • the light-reflective anisotropic conductive adhesive in the present embodiment contains such white needle-like inorganic particles and covers most of the conductive particles, the conductive particles exhibit a color such as brown. Even in this case, the whiteness of the thermosetting resin composition is realized. Because of the whiteness of such a thermosetting resin composition, the wavelength dependence of the reflection characteristics with respect to visible light is reduced, and the visible light is easily reflected. While suppressing the fall of the reflectance of the emitted light, the light which a LED element light-emits toward the lower surface side can also be utilized efficiently. As a result, the light emission efficiency (light extraction efficiency) of the LED element can be improved.
  • the light-reflective anisotropic conductive adhesive in this Embodiment of the thermosetting resin composition accompanying a temperature change is because the shape of the white inorganic particle as a light-reflective insulating particle is needle shape. It is possible to prevent the internal stress from being transmitted to the thermosetting resin by propagating and absorbing the internal stress in the needle crystal. In addition, when the particle shape is spherical, the internal stress of the thermosetting resin composition is less likely to be propagated and absorbed in the particles than the needle-shaped particles.
  • the toughness of the thermosetting resin composition can be increased.
  • the light-reflective anisotropic conductive adhesive exhibits excellent toughness, and can suppress generation of cracks and peeling of the adhesive surface even when the thermosetting resin composition expands and contracts due to temperature change. .
  • the light-reflective anisotropic conductive adhesive in the present embodiment is a particle made of a spherical inorganic compound exhibiting white as light-reflective insulating particles (hereinafter referred to as “white spherical inorganic particles”).
  • White needle-like inorganic particles may be added to the thermosetting resin composition containing the.
  • the white spherical inorganic particles are preferably made of the same material as the above white needle-like inorganic particles, and those having a refractive index equal to or lower than the refractive index of the thermosetting resin composition used, such as SiO2, are not applicable. .
  • the thermosetting resin composition can be further whitened to further improve the light extraction efficiency of the LED element. Also in this case, the toughness of the thermosetting resin can be increased.
  • the addition amount (Vol%) of the white needle-like inorganic particles be equal to or more than the addition amount (Vol%) of the white spherical inorganic particles.
  • the size is preferably 0.02 to 20 ⁇ m, and 0 2 to 1 ⁇ m is more preferable.
  • the white spherical inorganic particles like the white needle-like inorganic particles, preferably have a refractive index (JIS K7142) greater than the refractive index of the cured product of the thermosetting resin composition (JIS K7142). More preferably, it is about 02 larger.
  • resin-coated metal particles obtained by coating the surface of the spherical metal particles with a transparent insulating resin may be used instead of such white spherical inorganic particles.
  • the metal particles include nickel, silver, and aluminum.
  • the size of the resin-coated metal particles is preferably from 0.1 to 30 ⁇ m, more preferably from 0.2 to 10 ⁇ m.
  • size of the resin coating metal particle has shown the magnitude
  • a cured product of an acrylic resin can be preferably used.
  • a preferable example is a resin obtained by radical copolymerization of methyl methacrylate and 2-hydroxyethyl methacrylate in the presence of a radical initiator such as an organic peroxide such as benzoyl peroxide.
  • a radical initiator such as an organic peroxide such as benzoyl peroxide.
  • it is more preferably crosslinked with an isocyanate-based crosslinking agent such as 2,4-tolylene diisocyanate.
  • metal particles it is preferable to introduce a ⁇ -glycidoxy group, a vinyl group or the like into the metal surface in advance with a silane coupling agent.
  • Such resin-coated metal particles for example, are charged with metal particles and a silane coupling agent in a solvent such as toluene and stirred at room temperature for about 1 hour, and then, a radical monomer, a radical polymerization initiator, and as necessary. It can be produced by adding a crosslinking agent and stirring the mixture while heating to the radical polymerization initiation temperature.
  • the light-reflective anisotropic conductive adhesive can exhibit excellent toughness even when white spherical inorganic particles are added together with white needle-like inorganic particles. By being able to do, even if it expands and contracts by a temperature change, it can suppress that peeling of an adhesive surface and a crack generate
  • the conductive particles contained in the light-reflective anisotropic conductive adhesive in the present embodiment particles of a metal material used in conventional conductive particles for anisotropic conductive connection can be used.
  • the metal material for the conductive particles include gold, nickel, copper, silver, solder, palladium, aluminum, alloys thereof, multilayered products thereof (for example, nickel plating / gold flash plating products), and the like. it can.
  • thermosetting resin composition since the white needle-like inorganic particles cover most of the conductive particles, the thermosetting resin composition exhibits a brown color due to the conductive particles. And the entire thermosetting resin composition exhibits high whiteness.
  • metal-coated resin particles obtained by coating resin particles with a metal material may be used.
  • resin particles include styrene resin particles, benzoguanamine resin particles, and nylon resin particles.
  • a method of coating the resin particles with a metal material a conventionally known method can be employed, and for example, an electroless plating method, an electrolytic plating method, or the like can be used.
  • the layer thickness of the metal material to be coated may be any thickness that can ensure good connection reliability, and is usually 0.1 to 3 ⁇ m, although it depends on the particle size of the resin particles and the type of metal.
  • the particle size of the resin particles is preferably 1 to 20 ⁇ m, more preferably 3 to 10 ⁇ m, and even more preferably 3 to 5 ⁇ m. preferable.
  • the shape of the resin particles is preferably a spherical shape, but may be a flake shape or a rugby ball shape.
  • the metal-coated resin particles have a spherical shape, and if the particle size is too large, the connection reliability is lowered, so 1 to 20 ⁇ m is preferable, and 3 to 10 ⁇ m is more preferable.
  • the conductive particles contained in the light-reflective anisotropic conductive adhesive in the present embodiment are light-reflective conductive with light reflectivity as shown in the cross-sectional views of FIGS. 1A and 1B, for example. It is also possible to use particles.
  • the light-reflective conductive particles 10 shown in FIG. 1A are selected from core particles 1 coated with a metal material, and titanium oxide (TiO2) particles, zinc oxide (ZnO) particles, or aluminum oxide (Al2O3) particles on the surface thereof. And a light reflecting layer 3 formed from at least one kind of inorganic particles 2 formed.
  • the light reflecting layer 3 formed from such inorganic particles exhibits a color in a range from white to gray. For this reason, as described above, the wavelength dependency of the reflection characteristic with respect to visible light is small and the visible light is easily reflected, so that the luminous efficiency of the LED element can be further improved.
  • Zinc oxide which is not catalytic to photodegradation and has a high refractive index can be preferably used.
  • the core particle 1 is used for anisotropic conductive connection, and its surface is made of a metal different material.
  • Examples of the core particle 1 include an embodiment in which the core particle 1 itself is a metal material, or an embodiment in which the surface of the resin particle is coated with a metal material.
  • the layer thickness of the light reflecting layer 3 formed from the inorganic particles 2 is preferably 0.5 to 50%, more preferably 1 to 25%.
  • the particle size of the inorganic particles 2 is preferably 0.02 to 4 ⁇ m, particularly preferably 0.1 to 1 ⁇ m, and 0.2 to 0.5 ⁇ m.
  • the particle size of the inorganic particles 2 is set so that the light to be reflected (that is, the light emitted from the light emitting element) is not transmitted. It is preferable that it is 50% or more.
  • examples of the shape of the inorganic particles 2 include an amorphous shape, a spherical shape, a scaly shape, and a needle shape.
  • a spherical shape is preferable from the viewpoint of the light diffusion effect
  • a scaly shape is preferable from the viewpoint of the total reflection effect.
  • the light-reflective conductive particles 10 are produced by a known film formation technique (so-called mechanofusion method) in which a film composed of small particles is formed on the surface of large particle diameter particles by physically colliding large and small powders. be able to.
  • the inorganic particles 2 are fixed so as to bite into the metal material on the surface of the core particle 1, and on the other hand, the inorganic particles monolayers constitute the light reflecting layer 3 because the inorganic particles are hardly fused and fixed together. Therefore, in the case of FIG. 1A, the layer thickness of the light reflecting layer 3 is considered to be equal to or slightly thinner than the particle size of the inorganic particles 2.
  • the light-reflective conductive particle 20 shown in FIG. 1B contains a thermoplastic resin 4 in which the light-reflective layer 3 functions as an adhesive, and the inorganic particles 2 are also fixed to each other by the thermoplastic resin 4. It differs from the light-reflective conductive particle 10 of FIG. 1A in that it is formed (for example, two layers or three layers). By containing such a thermoplastic resin 4, the mechanical strength of the light reflecting layer 3 is improved, and the inorganic particles are hardly peeled off.
  • thermoplastic resin 4 a halogen-free thermoplastic resin can be preferably used for the purpose of low environmental load.
  • polyolefins such as polyethylene and polypropylene, polystyrene, acrylic resins, and the like can be preferably used.
  • Such light-reflective conductive particles 20 can also be manufactured by a mechanical fusion method. If the particle size of the thermoplastic resin 4 applied to the mechanical fusion method is too small, the adhesion function is lowered, and if it is too large, it is difficult to adhere to the core particles. More preferred. Further, if the blending amount of the thermoplastic resin 4 is too small, the adhesion function is deteriorated, and if it is too large, aggregates of particles are formed. 500 parts by mass is preferable, and 4 to 25 parts by mass is more preferable.
  • thermosetting resin contained in the light-reflective anisotropic conductive adhesive in the present embodiment it is preferable to use a colorless and transparent resin as much as possible. This is because the light reflecting efficiency of the light-reflective conductive particles in the anisotropic conductive adhesive is reflected without lowering the incident light without changing the light color of the incident light.
  • colorless and transparent means that the cured product of the anisotropic conductive adhesive has a light transmittance (JIS K7105) of 80% or more, preferably 90% or more with respect to visible light having a wavelength of 380 to 780 nm.
  • the blending amount of the conductive particles such as the light-reflective conductive particles with respect to 100 parts by mass of the thermosetting resin composition is too small, conduction failure occurs. Since short-circuit tends to occur, 1 to 100 parts by mass is preferable, and 10 to 50 parts by mass is more preferable.
  • the light-reflective anisotropic conductive adhesive in the present embodiment has a reflectance (JIS K7105) with respect to light having a wavelength of 450 nm of more than 9% by adding white needle-like inorganic particles to the thermosetting resin composition. High value.
  • the reflection characteristics of the light-reflective anisotropic conductive adhesive in the present embodiment include various other factors such as the reflection characteristics and blending amount of the light-reflective conductive particles, the blending composition of the thermosetting resin composition, and the like.
  • the reflectance (JIS K7105) with respect to light having a wavelength of 450 nm is realized to be 30% or more. Usually, if the amount of light-reflective conductive particles having good reflection characteristics is increased, the reflectance tends to increase.
  • the reflection characteristics of the light-reflective anisotropic conductive adhesive can be evaluated from the viewpoint of refractive index. That is, when the reflectance of the cured product is larger than the refractive index of the cured product of the thermosetting resin composition excluding the conductive particles and the light-reflective insulating particles, the light-reflective insulating particles and the heat surrounding them are heated. This is because the amount of light reflection at the interface between the curable resin composition and the cured product increases.
  • the difference obtained by subtracting the refractive index of the cured product of the thermosetting resin composition (JIS K7142) from the refractive index of the light-reflective insulating particles (JIS K7142) is preferably 0.02 or more, more preferably Is desirably 0.2 or more.
  • the refractive index of the thermosetting resin composition mainly composed of epoxy resin is about 1.5.
  • thermosetting resin composition those used in conventional anisotropic conductive adhesives and anisotropic conductive films can be used.
  • a thermosetting resin composition is obtained by blending an insulating binder resin with a curing agent.
  • the insulating binder resin is preferably an epoxy resin mainly composed of an alicyclic epoxy compound, a heterocyclic epoxy compound, a hydrogenated epoxy compound, or the like.
  • Preferred examples of the alicyclic epoxy compound include those having two or more epoxy groups in the molecule. These may be liquid or solid. Specific examples include glycidyl hexahydrobisphenol A, 3,4-epoxycyclohexenylmethyl-3 ', 4'-epoxycyclohexene carboxylate, and the like. Among them, glycidyl hexavidrobisphenol A, 3,4-epoxycyclohexenylmethyl-3 ′, 4 is preferable because it can ensure light transmission suitable for mounting LED elements on the cured product and is excellent in rapid curing. '-Epoxycyclohexenecarboxylate can be preferably used.
  • heterocyclic epoxy compound examples include an epoxy compound having a triazine ring, and particularly preferably 1,3,5-tris (2,3-epoxypropyl) -1,3,5-triazine-2,4, Mention may be made of 6- (1H, 3H, 5H) -trione.
  • water-added epoxy compound hydrogenated products of the above-described alicyclic epoxy compounds and heterocyclic epoxy compounds, and other known hydrogenated epoxy resins can be used.
  • the alicyclic epoxy compound, heterocyclic epoxy compound and hydrogenated epoxy compound may be used alone, but two or more kinds may be used in combination.
  • other epoxy compounds may be used in combination as long as the effects of the present invention are not impaired.
  • the curing agent examples include acid anhydrides, imidazole compounds, and dicyan.
  • acid anhydrides that are difficult to discolor the cured product particularly alicyclic acid anhydride-based curing agents, can be preferably used.
  • methylhexahydrophthalic anhydride etc. can be mentioned preferably.
  • thermosetting resin composition when using an alicyclic epoxy compound and an alicyclic acid anhydride-based curing agent, the respective amounts used are uncured if there is too little alicyclic acid anhydride-based curing agent.
  • the epoxy compound increases, and if it is too much, the corrosion of the adherend material tends to be accelerated due to the influence of the excess curing agent. Therefore, the alicyclic acid anhydride-based curing is performed on 100 parts by mass of the alicyclic epoxy compound.
  • the agent is preferably used in a proportion of 80 to 120 parts by mass, more preferably 95 to 105 parts by mass.
  • the light-reflective anisotropic conductive adhesive in the present embodiment is manufactured by uniformly mixing a thermosetting resin composition, conductive particles, and white needle-like inorganic particles that are light-reflective insulating particles. can do.
  • a thermosetting resin composition, conductive particles, and white needle-like inorganic particles that are light-reflective insulating particles are dispersed and mixed together with a solvent such as toluene. Then, it may be applied to the peeled PET film so as to have a desired thickness and dried at a temperature of about 80 ° C.
  • a light-emitting device 200 shown in FIG. 2 includes a connection terminal 22 on a substrate 21 and a connection bump 26 formed on each of an n-electrode 24 and a p-electrode 25 of an LED element 23 as a light-emitting element.
  • This is a light emitting device in which the above-described light-reflective anisotropic conductive adhesive is applied and the substrate 21 and the LED element 23 are flip-chip mounted.
  • the light-reflective anisotropic conductive adhesive cured product 100 is formed by dispersing the light-reflective insulating particles 10 in the cured product 11 of the thermosetting resin composition.
  • the LED element 23 reflects light in the cured product 100 of the light-reflective anisotropic conductive adhesive from light emitted toward the substrate 21 side. Reflected by the conductive insulating particles 10 and emitted from the upper surface of the LED element 23. Accordingly, it is possible to prevent a decrease in luminous efficiency.
  • LED element 23, bump 26, substrate 21, connection terminal 22, etc. can be the same as the configuration of the conventional light-emitting device.
  • the light emitting device 200 can be manufactured using a conventional anisotropic conductive connection technique except that the light-reflective anisotropic conductive adhesive in the present embodiment is used.
  • the well-known light emitting element other than the LED element 23 can be applied in the range which does not impair the effect of this invention.
  • Thermosetting resin composition comprising white needle-like inorganic particles and conductive particles (particle size 5 ⁇ m) whose surface of a spherical resin is gold-plated, and epoxy curing adhesive (adhesive binder mainly composed of CEL2021P-MeHHPA) It mixed with the thing and produced the anisotropic conductive adhesive.
  • the amount of white needle-like inorganic particles added was 12.0% by volume with respect to the thermosetting resin composition.
  • titanium dioxide (TiO 2) whiskers having a long direction particle size of 1.7 ⁇ m and a short direction particle size of 0.13 ⁇ m (aspect ratio of 13.1) were used.
  • the addition amount of electroconductive particle was 10 mass% with respect to the thermosetting resin composition.
  • the produced anisotropic conductive adhesive was applied onto a white plate so as to have a thickness of 100 ⁇ m, and was cured by heating at 200 ° C. for 1 minute.
  • the total reflectance (specular reflection and diffuse reflection) with respect to the light of wavelength 450nm which used barium sulfate as a standard was measured using the spectrophotometer (Shimadzu Corporation UV3100).
  • the conduction reliability and the presence or absence of cracks were evaluated by a thermal cycle test (TCT). Place the test LED module in the TCT, (a) 30 minutes at -40 ° C ⁇ ⁇ 30 minutes at 100 ° C, 1000 cycles, (b) -55 ° C, 30 minutes ⁇ ⁇ 125 ° C, 30 minutes, 1000 cycles It was. That is, (a) exposure to an atmosphere of ⁇ 40 ° C. and 100 ° C. for 30 minutes each, and 1000 cycles of a cooling / heating cycle with this as one cycle, and (b) exposure to an atmosphere of ⁇ 55 ° C. and 125 ° C. for 30 minutes, 1000 cycles of the cooling / heating cycle with this as one cycle were performed.
  • TCT thermal cycle test
  • Evaluation of the presence or absence of cracks was made by performing 1000 cycles of TCT and then observing the test LED module taken out from the TCT from the upper surface of the blue LED element with a metal microscope to observe whether or not cracks occurred.
  • the case where no occurrence of cracks was observed in the light-reflective anisotropic conductive adhesive was evaluated as “ ⁇ ”, and the case where generation of cracks was observed in the light-reflective anisotropic conductive adhesive was determined as “x”.
  • Example 2 Example 1 except that zinc oxide (ZnO) whiskers (Panatetra WZ-05F1, Amtec) having a long particle size of 50 ⁇ m and a short particle size of 3 ⁇ m (aspect ratio of 16.7) were used as white needle-shaped inorganic particles. The same process was performed.
  • ZnO zinc oxide
  • Example 3 Example 1 except that potassium titanate whiskers (Tismo series, manufactured by Otsuka Chemical Co., Ltd.) having a long particle size of 20 ⁇ m and a short particle size of 0.6 ⁇ m (aspect ratio 33.3) were used as the white needle-like inorganic particles. The same process was performed.
  • Example 4 The surface of zinc oxide (ZnO) whisker (Panatetra WZ-05F1, Amtec) having a long particle size of 50 ⁇ m and a short particle size of 3 ⁇ m (aspect ratio of 16.7) is treated with a silane coupling agent as white needle-like inorganic particles. The same treatment as in Example 1 was performed, except that what was used was used.
  • ZnO zinc oxide
  • Example 5 As white needle-like inorganic particles, zinc oxide (ZnO) whiskers (Panatetra WZ-05F1, manufactured by Amtec) having a long direction particle size of 50 ⁇ m, a short direction particle size of 3 ⁇ m, and an aspect ratio of 16.7 were used as a thermosetting resin composition. In addition to the addition of 9.0% by volume, zinc oxide (ZnO) white spherical inorganic particles (type I, manufactured by Sakai Chemical Co., Ltd.) having a particle size of 0.6 ⁇ m (aspect ratio of 1.0) are thermosetting. The same treatment as in Example 1 was performed, except that the resin composition was added at a ratio of 3.0% by volume.
  • ZnO zinc oxide
  • Example 1 The same treatment as in Example 1 was performed except that the anisotropic conductive adhesive did not contain white needle-like inorganic particles.
  • Example 3 In place of the white needle-like inorganic particles of Example 1, 0.6 ⁇ m (aspect ratio: 1.0) zinc oxide white spherical inorganic particles were added at a ratio of 12.0 vol% with respect to the thermosetting resin composition. Except that, the same processing as in Example 1 was performed.
  • Example 1 TiO2 (titanium dioxide) having an aspect ratio of 13.1 as white needle-like inorganic particles was 12.0% by volume with respect to the thermosetting resin composition.
  • the reflectance at a wavelength of 450 nm of the cured product of the added light-reflective anisotropic conductive adhesive was 55%.
  • the total luminous flux of the LED mounting sample using this light-reflective anisotropic conductive adhesive was 350 (mlm). Both the reflectance and the light extraction efficiency from the LED were slightly lower than those of Comparative Example 2 using spherical TiO2 (white spherical inorganic particles).
  • no crack was generated after 1000 cycles of TCT ( ⁇ 40 to 100 ° C.) and 1000 cycles of TCT ( ⁇ 55 to 125 ° C.), and the crack resistance was improved.
  • Example 2 As can be seen from the results of Example 2, light in which ZnO (zinc oxide) having an aspect ratio of 16.7 was added as acicular white inorganic particles at a ratio of 12.0% by volume with respect to the thermosetting resin composition.
  • the reflectance at a wavelength of 450 nm of the cured product of the reflective anisotropic conductive adhesive was 35%.
  • the total luminous flux of the LED mounting sample using this light-reflective anisotropic conductive adhesive was 300 (mlm). Both the reflectance and the light extraction efficiency from the LED were slightly lower than those of Comparative Example 3 using spherical ZnO (white spherical inorganic particles). However, no crack was generated after 1000 cycles of TCT ( ⁇ 40 to 100 ° C.) and 1000 cycles of TCT ( ⁇ 55 to 125 ° C.), and the crack resistance was improved.
  • Example 3 light reflectivity obtained by adding potassium titanate having an aspect ratio of 33.3 as white needle-like inorganic particles in a proportion of 12.0% by volume with respect to the thermosetting resin composition.
  • the reflectance of the cured anisotropic conductive adhesive at a wavelength of 450 nm was 30%.
  • the total luminous flux of the LED mounting sample using this light-reflective anisotropic conductive adhesive was 250 (mlm).
  • Both the reflectance and the light extraction efficiency from the blue LED were slightly lower than those of Comparative Example 3 using granular ZnO (white spherical inorganic particles).
  • no crack was generated after 1000 cycles of TCT ( ⁇ 40 to 100 ° C.) and 1000 cycles of TCT ( ⁇ 55 to 125 ° C.), and the crack resistance was improved.
  • zinc oxide (ZnO) having an aspect ratio of 16.7 as white needle-like inorganic particles was added at a rate of 9.0% by volume with respect to the thermosetting resin composition.
  • the reflectance at a wavelength of 450 nm of a cured product of a light-reflective anisotropic conductive adhesive obtained by adding spherical ZnO (white spherical inorganic particles) at a ratio of 3.0% by volume to the thermosetting resin composition is 40%.
  • the total luminous flux of the LED mounting sample using this light-reflective anisotropic conductive adhesive was 250 (mlm).
  • the wavelength of the cured product of the anisotropic conductive adhesive in which 10% by mass of the conductive particles were added to the thermosetting resin composition without adding the needle-shaped white inorganic particles was 450 nm.
  • the reflectance at 8 was 8%.
  • the total luminous flux of the LED mounting sample using this anisotropic conductive adhesive was 200 (mlm). Since the light with a wavelength of 450 nm emitted from the blue LED is absorbed by gold (Au), the reflectance with respect to this light is lowered, and thereby the emission efficiency (light extraction efficiency) of the blue LED is lowered. No cracks occurred after 1000 cycles of TCT ( ⁇ 40 to 100 ° C.) and 1000 cycles of TCT ( ⁇ 55 to 125 ° C.).
  • a light-reflective anisotropic conductive adhesive having a white spherical inorganic particle of titanium dioxide (TiO2) added at 12.0% by volume with respect to the thermosetting resin composition at a wavelength of 450 nm.
  • the reflectance of was 62%.
  • the total luminous flux of the LED mounting sample using this light-reflective anisotropic conductive adhesive was 390 (mlm).
  • cracks did not occur after 1000 cycles of TCT ( ⁇ 40 to 100 ° C.), but cracks occurred after 1000 cycles of TCT ( ⁇ 55 to 125 ° C.).
  • the light-reflective anisotropic conductive adhesive obtained by adding 12.0% by volume of white spherical inorganic particles of zinc oxide (ZnO) to the thermosetting resin composition at a wavelength of 450 nm.
  • the reflectance of was 40%.
  • the total luminous flux of the LED mounting sample using this light-reflective anisotropic conductive adhesive was 350 (mlm).
  • Examples 1 to 5 using the light-reflective anisotropic conductive adhesive in which the white needle-like inorganic particles are added to the thermosetting resin composition the light emitted from the LED element is not affected. It was possible to suppress the decrease in reflectivity and improve the light emission efficiency (light extraction efficiency) of the LED element. Further, the light-reflective anisotropic conductive adhesives in Examples 1 to 5 were confirmed to have high crack resistance even after TCT. This is presumably because the toughness of the thermosetting resin composition could be increased by the white needle-like inorganic particles having a needle-like shape. Further, it was found that the light-reflective anisotropic conductive adhesives of Examples 1 to 5 have high resistance to temperature changes and exhibit excellent conduction reliability.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

 発光素子の発光効率を維持するとともに、クラックの発生を防止して高い導通信頼性を得ることが可能な光反射性異方性導電接着剤及び発光装置を提供する。光反射性異方性導電接着剤は、熱硬化性樹脂組成物と、導電性粒子と、光反射性針状絶縁粒子とを含有する。この光反射性針状絶縁粒子は、酸化チタン、酸化亜鉛及びチタン酸塩からなる群より選択される少なくとも1種の無機粒子である。

Description

光反射性異方性導電接着剤及び発光装置
 本発明は、発光素子を配線板に異方性導電接続するために使用する光反射性異方性導電接着剤、及び、この光反射性異方性導電接着剤を用いて発光素子を配線板に実装してなる発光装置に関する。
 本出願は、日本国において2010年4月13日に出願された日本特許出願番号特願2010-092672を基礎として優先権を主張するものであり、この出願を参照することにより、本出願に援用される。
 従来、発光ダイオード(LED)素子等の発光素子を使用した発光装置が広く使用されている。図3~図5に、旧タイプの発光装置の構造例を示す。図3に示す発光装置の製造においては、基板31上にダイボンド接着剤32でLED素子33を接合し、LED素子33の上面のp電極34,n電極35を金(Au)ワイヤ37で基板31に銀メッキ36によりワイヤボンディングする。これにより、LED素子33と基板31とを電気的に接合している。通常、発光装置は、LED素子33全体を透明モールド樹脂等の樹脂で封止するが(図示せず)、樹脂とLED素子33及び金ワイヤ37との線膨張係数の違いによって金ワイヤ37の接続部分に剥離が生じたり、金ワイヤ37の断線による電気接続不良が発生することがある。
 一般に、このような発光装置に対しては、LED素子から出射された光の反射率の低減を抑制して発光効率(光取り出し効率)を維持させることが要請されている。図3に示す発光装置において、LED素子33のp電極34、n電極35としては、通常、金電極を使用する。しかしながら、LED素子33が出射する光の内、上面側に出射する波長400~500nmの光を金電極や金ワイヤが吸収し、また、下側に出射した光をダイボンド接着剤32が吸収する。このような光吸収は、LED素子33の発光効率(光取り出し効率)を低下させてしまう。さらに、ダイボンド接着剤32による接着プロセスは、オーブン硬化によるため、製造に時間がかかるといった問題もある。
 図4に示す発光装置は、銀ペーストに代表される導電性ペースト37が使用され、この導電性ペースト37によってLED素子33の下面のp電極34、n電極35と基板31上の銀メッキ部分36とが電気的に接合されている。しかしながら、導電性ペースト37は、接着力が弱いため、封止樹脂38による補強が必要となる。その上、導電性ペースト37の内部に光が拡散又は吸収することがあり、LED素子33の発光効率を低下させてしまう。
 そこで、例えば異方性導電接着剤(ACP)又は異方性導電接着フィルム(ACP)を硬化させることでLED素子と基板とを接続固定して電気的に接合したものが提案されている。例えば特許文献1には、LED素子をフリップチップ実装する方法が記載されている。また、例えば図5に示す発光装置は、市販の異方性導電接着剤39を使用してフリップチップ実装によりLED素子33の下面のp電極34、n電極35と基板31とを電気的に接合したものである。このフリップチップ実装技術においては、p電極34とn電極35とにバンプ40がそれぞれ形成されている。
 特許文献1の技術では、LED素子に光反射層をp電極及びn電極と絶縁するように金属蒸着層等により設けている。これにより、LED素子から出射された光の反射率の低減を抑制して発光効率を維持させている。しかしながら、この特許文献1の技術では、発光装置の製造工程数が増加する上、コストアップが避けられないという問題がある。他方、図5に示す発光装置は、光反射層を設けないものの、ACPのバインダに分散される導電性粒子として使用されるAu又はNiが茶色又は暗茶色を呈すること、バインダが通常含有するイミダゾール系潜在性硬化剤が茶色を呈すること等の原因により、ACPのバインダが全体的に茶色を呈し、これによって光を吸収してしまう。その結果、LED素子33の発光効率が低下する。
特開平11-168235号公報
 ところで、ACPは、エポキシ樹脂をバインダ樹脂として使用するが、エポキシ樹脂を使用するACPは、温度変化に伴う接続基板との熱膨張率差に基づく内部応力によって、導通抵抗の増大、接合面の剥離、クラック等を生じていた。このため、鉛フリーハンダの対応リフロー、熱衝撃の耐性、高温高湿度雰囲気中で使用及び貯蔵した場合の、蒸着配線の腐食現象に対する耐性等の信頼性が低下することがあった。
 本発明は、このような従来の実情に鑑みて提案されたものであり、LED素子等の発光素子を配線板に異方性導電接着剤を用いてフリップチップ実装してなり、製造コストを招くような光反射層をLED素子に設けることなく発光素子の発光効率を維持させる発光装置において、異方性導電接着剤のクラックの発生を防止して高い導通信頼性を得ることを目的とするものである。
 本件発明者は、異方性導電接着剤中に添加する光反射性絶縁粒子を針状形状とすることによって、クラックの発生を防止できることを見出した。
 すなわち、本発明は、発光素子を配線板に異方性導電接続するために使用する光反射性異方性導電接着剤であって、熱硬化性樹脂、導電性粒子及び光反射性針状絶縁粒子を含有することを特徴とする。
 また、本発明は、このような光反射性異方性導電接着剤を介して、発光素子がフリップチップ方式で配線板に実装されていることを特徴とする。
 本発明の光反射性異方性導電接着剤及び発光装置によれば、異方性導電接着剤中に光反射性針状絶縁粒子を添加することにより、光反射性異方性導電接着剤におけるクラックの発生を防止して高い導通信頼性を得ることができる。
図1Aは、光反射性導電性粒子の断面図であり、図1Bは、光反射性導電性粒子の断面図である。 図2は、本実施の形態における発光装置の断面図である。 図3は、従来の発光装置の断面図である。 図4は、従来の発光装置の断面図である。 図5は、従来の発光装置の断面図である。
 以下、本発明を適用した光反射性異方性導電接着剤の具体的な実施の形態(以下、これを「本実施の形態」という。)の一例について、図面を参照しながら説明する。本実施の形態における光反射性異方性導電接着剤は、発光素子であるLED素子を配線板に異方性導電接続するために使用する接着剤であって、熱硬化性樹脂組成物と、導電性粒子と、光反射性針状絶縁粒子とを含有する。
 光反射性針状絶縁粒子は、後述するように、アスペクト比が所定範囲の値である針状形状からなることを特徴としている。熱硬化性樹脂組成物が球状粒子を含有する場合、温度変化に伴い伸縮性が低下すると、熱硬化性樹脂組成物の内部応力によって球状粒子と熱硬化性樹脂組成物との界面からクラックが発生する場合がある。このように光反射性異方性導電接着剤にクラックが生じると、導通信頼性を損なうことになる。そのため、光反射性異方導電接着剤は、優れた強靭性を有することが必要となる。
 本実施の形態における光反射性異方性導電接着剤は、アスペクト比が所定範囲の針状の光反射性絶縁粒子を熱硬化性樹脂組成物に添加する。熱硬化性樹脂組成物中において、それぞれランダムな方向に配置される針状の光反射性絶縁粒子は、温度変化に伴う熱硬化性樹脂組成物の内部応力を針状結晶中に伝搬及び吸収させて熱硬化性樹脂にこの内部応力が伝わるのを抑制することができるため、熱硬化性樹脂組成物の強靭性を高めることができる。これにより、光反射性異方導電接着剤は、優れた強靭性を発揮して、温度変化によって熱硬化性樹脂組成物が伸縮してもクラックの発生や接着面の剥離を抑制することができる。
 光反射性針状絶縁粒子は、可視光を発光する発光装置においては、白色を呈する針状無機化合物からなり、光反射性異方性導電接着剤に入射した光を外部に反射する。光反射性針状絶縁粒子自体が白色を呈することにより、可視光に対する反射特性の波長依存性を小さくすることができ、可視光を効率的に反射することができる。
 このように、本実施の形態における光反射性異方性導電接着剤は、白色を呈するとともにアスペクト比が所定範囲の針状形状を有する無機化合物からなる粒子(以下、これを「白色針状無機粒子」という。)を含有することにより、発光素子から出射された光に対する反射率の低減を抑制して発光素子の発光効率を維持するとともに、クラック等を防止して高い導通信頼性を得ることができる。
 白色針状無機粒子としては、例えば酸化亜鉛ウィスカ、酸化チタンウィスカ、チタン酸カリウムウィスカ等のチタン酸塩ウィスカ、ホウ酸アルミニウムウィスカ、ウォラストナイト(カオリンシリケートの針状結晶)等の針状形状の無機化合物を挙げることができる。ウィスカは、特殊な製法によって針状に成長した結晶であり、結晶構造に乱れがないため弾力性に富み、変形しにくいという利点を有する。これらの無機化合物は、可視光を発光する発光装置においては白色を呈するため、可視光に対する反射特性の波長依存性が小さく、且つ可視光を反射しやすい。中でも、酸化亜鉛ウィスカは、白色度が高く、且つ、硬化した異方性導電接着剤における熱硬化性樹脂組成物の硬化物の光劣化が懸念される場合であっても光劣化に対して触媒性がないことから、特に好ましい。
 白色針状無機粒子は、一本の針状形状を有する結晶(単針状結晶)からなる場合には、その繊維径(短方向粒径)は、5μm以下が好ましい。また、単針状結晶からなる白色針状無機粒子のアスペクト比は、10よりも大きく35未満が好ましく、10よりも大きく20未満が特に好ましい。白色針状無機粒子のアスペクト比が10よりも大きい場合には、熱硬化性樹脂の内部応力を十分に伝搬及び吸収させることができる。また、白色針状無機粒子のアスペクト比が35未満である場合には、針状の結晶が折れにくくなるとともに、熱硬化性樹脂中へ均一に分散することができ、導電性粒子による異方性接続を阻害することがない。このアスペクト比が20未満である場合には、熱硬化性樹脂中への分散性をさらに向上させることができる。
 アスペクト比が10よりも大きく35未満の白色針状無機粒子を熱硬化性樹脂組成物に添加することにより、熱硬化性樹脂組成物の強靭性を高めることができるため、光反射性異方性導電接着剤が伸縮しても接着面の剥離やクラックが発生することを抑制することができる。
 なお、白色針状無機粒子としては、このような単針状結晶であるものに代えて、例えばテトラポッド(登録商標)のように四面体の中心部と頂点とをそれぞれ結合してなる形状等の、複数本の針状形状を有する結晶(複針状結晶)を使用するようにしてもよい。複針状結晶の白色針状無機粒子は、単針状結晶の白色針状無機粒子に比べて熱伝導性が大きい点で優れているが、単針状結晶よりもかさ高い結晶構造であるため、熱圧着時に針状部分によって基板や素子の接合部品を傷付けないように注意する必要がある。
 また、針状白色無機粒子は、例えばシランカップリング剤で処理したものであってもよい。針状白色無機粒子がシランカップリング剤で処理されていることにより、熱硬化性樹組成物中での分散性を向上させることができる。このため、シランカップリング剤で処理した針状白色無機粒子を短時間に均一に熱硬化性樹脂組成物中に混合させることができる。
 白色針状無機粒子は、その屈折率(JIS K7142)が、好ましくは熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きいこと、より好ましくは少なくとも0.02程度大きいことが好ましい。屈折率の差が小さいと、それらの界面での反射効率が低下するからである。すなわち、白色針状無機粒子としては、光反射性且つ絶縁性を有する無機粒子であっても、SiO2のように、その屈折率が使用する熱硬化性樹脂組成物の屈折率以下であるものは適用できない。
 白色針状無機粒子の光反射性異方性導電接着剤中の配合量は、少なすぎると十分な光反射を実現することができず、その一方、多すぎると、熱硬化性樹脂の接着性が低下するため、熱硬化性樹脂組成物に対し、1~50体積%(Vol%)であることが好ましく、5~25体積%であることが特に好ましい。
 本実施の形態における光反射性異方性導電接着剤は、このような白色針状無機粒子を含有することで、導電性粒子の大部分を覆うため、導電性粒子が茶色等の色を呈する場合であっても、熱硬化性樹脂組成物の白色性を実現する。このような熱硬化性樹脂組成物の白色性により、可視光に対する反射特性の波長依存性を小さくし、且つ可視光を反射しやすくなるため、基板電極の色の種類に関係なく、LED素子から出射される光の反射率の低下を抑制するとともに、LED素子がその下面側に向けて発光する光も効率的に利用することができる。その結果、LED素子の発光効率(光取り出し効率)を向上させることができる。
 そして、本実施の形態における光反射性異方性導電接着剤は、光反射性絶縁粒子としての白色の無機粒子の形状が針状であることにより、温度変化に伴う熱硬化性樹脂組成物の内部応力を針状結晶中に伝搬及び吸収させて熱硬化性樹脂にこの内部応力が伝わるのを抑制することができる。なお、粒子形状が球状である場合には、熱硬化性樹脂組成物の内部応力を、針状形状の粒子に比べて粒子内に伝搬及び吸収させにくい。
 光反射性異方導電接着剤は、このようにして熱硬化性樹脂にこの内部応力が伝わるのを抑制するため、熱硬化性樹脂組成物の強靭性を高めることができる。これにより、光反射性異方導電接着剤は、優れた強靭性を発揮して、温度変化によって熱硬化性樹脂組成物が伸縮してもクラックの発生や接着面の剥離を抑制することができる。
 なお、本実施の形態における光反射性異方性導電接着剤は、光反射性絶縁粒子としての白色を呈する球状形状の無機化合物からなる粒子(以下、これを「白色球状無機粒子」という。)を含有する熱硬化性樹脂組成物に、白色針状無機粒子を添加するようにしてもよい。白色球状無機粒子は、上述の白色針状無機粒子と同様の材料からなることが好ましく、SiO2のように、その屈折率が使用する熱硬化性樹脂組成物の屈折率以下であるものは適用できない。
 この白色針状無機粒子とともに白色球状無機粒子を添加することで、熱硬化性樹脂組成物をさらに白色化してLED素子の光取り出し効率をより向上させることができる。また、この場合においても、熱硬化性樹脂の強靭性を高めることができる。ここで、白色針状無機粒子の添加量(Vol%)は、白色球状無機粒子の添加量(Vol%)と同量以上とすることが好ましい。
 白色球状無機粒子は、小さすぎると反射率が低くなり、大きすぎると異方性導電性粒子による接続を阻害する等の傾向があるので、その大きさは、0.02~20μmが好ましく、0.2~1μmがより好ましい。
 白色球状無機粒子は、白色針状無機粒子と同様に、その屈折率(JIS K7142)が、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きいことが好ましく、少なくとも0.02程度大きいことがより好ましい。
 球状の光反射性絶縁粒子としては、このような白色球状無機粒子に代えて、球状の金属粒子の表面を透明な絶縁性樹脂で被覆した樹脂被覆金属粒子を使用してもよい。金属粒子としては、ニッケル、銀、アルミニウム等を挙げることができる。
 樹脂被覆金属粒子の大きさは、粒径0.1~30μmが好ましく、0.2~10μmであることがより好ましい。なお、樹脂被覆金属粒子の大きさは、絶縁被覆も含めての大きさを示している。
 このような樹脂被覆金属粒子における当該樹脂としては、種々の絶縁性樹脂を使用することができる。機能的強度や透明性の点から、アクリル系樹脂の硬化物を好ましく利用することができる。好ましくは、ベンゾイルパーオキサイド等の有機過酸化物等のラジカル開始剤の存在下で、メタクリル酸メチルとメタクリル酸2-ヒドロキシエチルとをラジカル共重合させた樹脂を挙げることができる。この場合、2,4-トリレンジイソシアネート等のイソシアネート系架橋剤で架橋されていることがより好ましい。
 また、金属粒子としては、予めシランカップリング剤でγ-グリシドキシ基やビニル基等を金属表面に導入しておくことが好ましい。
 このような樹脂被覆金属粒子は、例えばトルエン等の溶媒中に金属粒子とシランカップリング剤とを投入し、室温で約1時間攪拌した後、ラジカルモノマーとラジカル重合開始剤と、必要に応じて架橋剤とを投入し、ラジカル重合開始温度に加温しながら攪拌することにより製造することができる。
 光反射性異方性導電接着剤において、白色針状無機粒子とともに白色球状無機粒子が添加されている場合においても、光反射性異方性導電接着剤は、優れた強靭性を発揮することができることにより、温度変化によって伸縮しても接着面の剥離やクラックが発生することを抑制することができる。
 本実施の形態における光反射性異方性導電接着剤が含有する導電性粒子としては、異方性導電接続用の従来の導電性粒子において使用されている金属材料の粒子を使用することができる。すなわち、導電性粒子の金属材料としては、例えば金、ニッケル、銅、銀、半田、パラジウム、アルミニウム、それらの合金、それらの多層化物(例えば、ニッケルメッキ/金フラッシュメッキ物)等を挙げることができる。
 なお、金、ニッケル或いは銅を金属材料とする導電性粒子は、茶色を呈することから、本発明の効果を他の金属材料よりも享受することができる。すなわち、上述したように、熱硬化性樹脂組成物中において、白色針状無機粒子が導電性粒子の大部分を覆うため、導電性粒子に起因して熱硬化性樹脂組成物が茶色を呈するのを抑制し、熱硬化性樹脂組成物全体が高い白色性を呈するようになる。
 また、導電性粒子としては、樹脂粒子を金属材料で被覆した金属被覆樹脂粒子を使用するようにしてもよい。このような樹脂粒子としては、スチレン系樹脂粒子、ベンゾグアナミン樹脂粒子、ナイロン樹脂粒子等を挙げることができる。樹脂粒子を金属材料で被覆する方法としては、従来公知の方法を採用することができ、例えば無電解メッキ法、電解メッキ法等を利用することができる。また、被覆する金属材料の層厚は、良好な接続信頼性を確保できる厚さであればよく、樹脂粒子の粒径や金属の種類にもよるが、通常、0.1~3μmである。
 また、樹脂粒子の粒径は、小さすぎると導通不良が生じ、大きすぎるとパターン間ショートが生じる傾向にあるので、1~20μmが好ましく、3~10μmがより好ましく、さらには3~5μmが特に好ましい。この場合、樹脂粒子の形状としては球形が好ましいが、フレーク状、ラクビーボール状であってもよい。
 金属被覆樹脂粒子は、球状形状であり、その粒径は、大きすぎると接続信頼性の低下となるため、1~20μmが好ましく、3~10μmがより好ましい。
 なお、本実施の形態における光反射性異方性導電接着剤が含有する導電性粒子は、例えば図1A、図1Bの断面図に示されるような、光反射性を付与した光反射性導電性粒子とすることも可能である。
 図1Aに示す光反射性導電性粒子10は、金属材料で被覆されているコア粒子1と、その表面に酸化チタン(TiO2)粒子、酸化亜鉛(ZnO)粒子又は酸化アルミニウム(Al2O3)粒子から選択された少なくとも一種の無機粒子2から形成される光反射層3とから構成される。このような無機粒子から形成された光反射層3は、白色から灰色の範囲にある色を呈する。このため、上述したように、可視光に対する反射特性の波長依存性が小さく、且つ可視光を反射しやすくなり、LED素子の発光効率をより向上させることができる。
 なお、酸化チタン粒子、酸化亜鉛粒子又は酸化アルミニウム粒子の内、硬化した異方性導電接着剤の熱硬化性樹脂組成物の硬化物の光劣化が懸念される場合には、上述したように、光劣化に対して触媒性がなく、屈折率も高い酸化亜鉛を好ましく使用することができる。
 コア粒子1は、異方性導電接続に供するものであり、表面が金属異材料で構成されている。コア粒子1の態様としては、例えばコア粒子1そのものが金属材料である態様、又は樹脂粒子の表面が金属材料で被覆された態様を挙げることができる。
 無機粒子2から形成された光反射層3の層厚は、コア粒子1の粒径との相対的大きさの観点からみると、コア粒子1の粒径に対して小さすぎると反射率の低下が著しくなり、大きすぎると導通不良が生じる。このため、光反射層3の層厚は、0.5~50%が好ましく、1~25%がより好ましい。
 また、光反射性導電性粒子10において、光反射層3を構成する無機粒子2の粒径は、小さすぎると光反射現象が生じ難くなり、大きすぎると光反射層の形成が困難となる傾向がある。このため、無機粒子2の粒径は、0.02~4μmが好ましく、0.1~1μm、0.2~0.5μmが特に好ましい。この場合、光反射させる光の波長の観点からみると、無機粒子2の粒径は、反射させるべき光(すなわち、発光素子が発する光)が透過してしまわないように、その光の波長の50%以上であることが好ましい。この場合、無機粒子2の形状としては無定型、球状、鱗片状、針状等を挙げることができるが、中でも、光拡散効果の点から球状、全反射効果の点から鱗片状の形状が好ましい。
 光反射性導電性粒子10は、大小の粉末同士を物理的に衝突させることにより大粒径粒子の表面に小粒子からなる膜を形成させる公知の成膜技術(いわゆるメカノフュージョン法)により製造することができる。この場合、無機粒子2は、コア粒子1の表面の金属材料に食い込むように固定され、他方、無機粒子同士が融着固定されにくいから、無機粒子のモノレイヤが光反射層3を構成する。したがって、図1Aの場合、光反射層3の層厚は、無機粒子2の粒径と同等乃至わずかに薄くなると考えられる。
 図1Bに示す光反射性導電性粒子20は、光反射層3が接着剤として機能する熱可塑性樹脂4を含有し、この熱可塑性樹脂4により無機粒子2同士も固定され、無機粒子2が多層化(例えば2層又は3層)している点で、図1Aの光反射性導電性粒子10と相違する。このような熱可塑性樹脂4を含有することにより、光反射層3の機械的強度が向上し、無機粒子の剥落等が生じにくくなる。
 熱可塑性樹脂4としては、環境低負荷を意図してハロゲンフリーの熱可塑性樹脂を好ましく使用することができ、例えば、ポリエチレン、ポリプロピレン等のポリオレフィンやポリスチレン、アクリル樹脂等を好ましく使用することができる。
 このような光反射性導電性粒子20も、メカフュージョン法により製造することができる。メカフュージョン法に適用する熱可塑性樹脂4の粒子径は、小さすぎると接着機能が低下し、大きすぎるとコア粒子に付着しにくくなるので、0.02~4μmが好ましく、0.1~1μmがより好ましい。また、このような熱可塑性樹脂4の配合量は、少なすぎると接着機能が低下し、多すぎると粒子の凝集体が形成されるので、無機粒子2の100質量部に対し、0.2~500質量部が好ましく、4~25質量部がより好ましい。
 本実施の形態における光反射性異方性導電接着剤に含まれる熱硬化性樹脂としては、なるべく無色透明なものを使用することが好ましい。異方性導電接着剤中の光反射性導電性粒子の光反射効率を低下させず、更には入射光の光色を変えずに反射させるためである。ここで、無色透明とは、異方性導電接着剤の硬化物が、波長380~780nmの可視光に対して光路長1cmの光透過率(JIS K7105)が80%以上、好ましくは90%以上となることを意味する。
 光反射性異方性導電接着剤において、熱硬化性樹脂組成物100質量部に対する光反射性導電性粒子等の導電性粒子の配合量は、少なすぎると導通不良が生じ、多すぎるとパターン間ショートが生じる傾向があるので、1~100質量部が好ましく、10~50質量部がより好ましい。
 本実施の形態における光反射性異方性導電接着剤は、熱硬化性樹脂組成物に白色針状無機粒子を加えることで、波長450nmの光に対する反射率(JIS K7105)が、9%よりも高い値となる。本実施の形態における光反射性異方性導電接着剤の反射特性は、その他の様々な因子、例えば光反射性導電性粒子の反射特性や配合量、熱硬化性樹脂組成物の配合組成等を適宜調整することで、波長450nmの光に対する反射率(JIS K7105)で、30%以上を実現する。通常、反射特性の良好な光反射性導電性粒子の配合量を増量すれば、反射率も増大する傾向がある。
 また、光反射性異方性導電接着剤の反射特性は屈折率という観点から評価することもできる。すなわち、その硬化物の反射率が、導電性粒子と光反射性絶縁粒子とを除いた熱硬化性樹脂組成物の硬化物の屈折率よりも大きいと、光反射性絶縁粒子とそれを取り巻く熱硬化性樹脂組成物の硬化物との界面での光反射量が増大するからである。具体的には、光反射性絶縁粒子の屈折率(JIS K7142)から、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)を差し引いた差が、好ましくは0.02以上、より好ましくは0.2以上であることが望まれる。なお、通常、エポキシ樹脂を主体とする熱硬化性樹脂組成物の屈折率は、約1.5である。
 熱硬化性樹脂組成物としては、従来の異方性導電接着剤や異方性導電フィルムにおいて使用されているものを利用することができる。一般に、このような熱硬化性樹脂組成物は、絶縁性バインダ樹脂に硬化剤を配合したものである。絶縁性バインダ樹脂としては、脂環式エポキシ化合物や複素環系エポキシ化合物や水素添加エポキシ化合物等を主成分としたエポキシ系樹脂が好ましく挙げられる。
 脂環式エポキシ化合物としては、分子内に2つ以上のエポキシ基を有するものが好ましく挙げられる。これらは、液状であっても固体状であってもよい。具体的には、グリシジルヘキサヒドロビスフェノールA、3,4-エポキシシクロヘキセニルメチル-3’,4’-エポキシシクロヘキセンカルボキシレート等を挙げることができる。中でも、硬化物にLED素子の実装等に適した光透過性を確保でき、速硬化性にも優れている点から、グリシジルヘキサビドロビスフェノールA、3,4-エポキシシクロヘキセニルメチル-3’,4’-エポキシシクロヘキセンカルボキシレートを好ましく使用することができる。
 複素環状エポキシ化合物としては、トリアジン環を有するエポキシ化合物を挙げることができ、特に好ましくは1,3,5-トリス(2,3-エポキシプロピル)-1,3,5-トリアジン-2,4,6-(1H,3H,5H)-トリオンを挙げることができる。
 水添加エポキシ化合物としては、先述の脂環式エポキシ化合物や複素環系エポキシ化合物の水素添加物や、その他公知の水素添加エポキシ樹脂を使用することができる。
 脂環式エポキシ化合物や複素環系エポキシ化合物や水素添加エポキシ化合物は、単独で使用してもよいが、2種以上を併用することができる。また、これらのエポキシ化合物に加えて本発明の効果を損なわない限り、他のエポキシ化合物を併用してもよい。例えば、ビスフェノールA、ビスフェノールF、ビスフェノールS、テトラメチルビスフェノールA、ジアリールビスフェノールA、ハイドロキノン、カテコール、レゾルシン、クレゾール、テトラブロモビスフェノールA、トリヒドロキシビフェニル、ベンゾフェノン、ビスレゾルシノール、ビスフェノールヘキサフルオロアセトン、テトラメチルビスフェノールA、テトラメチルビスフェノールF、トリス(ヒドロキシフェニル)メタン、ビキシレノール、フェノールノボラック、クレゾールノボラック等の多価フェノールとエピクロルヒドリンとを反応させて得られるグリシジルエーテル;グリセリン、ネオペンチルグリコール、エチレングリコール、プロピレングリコール、ヘキシレングリコール、ポリエチレングリコール、ポリプロピレングリコール等の脂肪族多価アルコールとエピクロルヒドリンとを反応させて得られるポリグリシジルエーテル;p-オキシ安息香酸、β-オキシナフトエ酸のようなヒドロキシカルボン酸とエピクロルヒドリンとを反応させて得られるグリシジルエーテルエステル;フタル酸、メチルフタル酸、イソフタル酸、テレフタル酸、テトラハイドロフタル酸、エンドメチレンテトラハイドロフタル酸、エンドメチレンヘキサハイドロフタル酸、トリメット酸、重合脂肪酸のようなポリカルボン酸から得られるポリグリシジルエステル;アミノフェノール、アミノアルキルフェノールから得られるグリシジルアミノグリシジルエーテル;アミノ安息香酸から得られるグリシジルアミノグリシジルエステル;アニリン、トルイジン、トリブロムアニリン、キシリレンジアミン、ジアミノシクロヘキサン、ビスアミノメチルシクロヘキサン、4,4’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルスルホン等から得られるグリシジルアミン;エポキシ化ポリオレフィン等の公知のエポキシ樹脂類が挙げられる。
 硬化剤としては、酸無水物、イミダゾール化合物、ジシアン等を挙げることができる。中でも、硬化物を変色させ難い酸無水物、特に脂環式酸無水物系硬化剤を好ましく使用できる。具体的には、メチルヘキサヒドロフタル酸無水物等を好ましく挙げることができる。
 熱硬化性樹脂組成物において、脂環式エポキシ化合物と脂環式酸無水物系硬化剤とを使用する場合、それぞれの使用量は、脂環式酸無水物系硬化剤が少なすぎると未硬化エポキシ化合物が多くなり、多すぎると余剰の硬化剤の影響で被着体材料の腐食が促進される傾向があるので、脂環式エポキシ化合物100質量部に対し、脂環式酸無水物系硬化剤を、好ましくは80~120質量部、より好ましくは95~105質量部の割合で使用する。
 本実施の形態における光反射性異方性導電接着剤は、熱硬化性樹脂組成物と、導電性粒子と、光反射性絶縁粒子である白色針状無機粒子とを均一に混合することにより製造することができる。また、光反射性異方性導電フィルムとする場合には、熱硬化性樹脂組成物と、導電性粒子と、光反射性絶縁粒子である白色針状無機粒子とをトルエン等の溶媒とともに分散混合し、剥離処理したPETフィルムに所期の厚さとなるように塗布し、約80℃程度の温度で乾燥すればよい。
 次に、本実施の形態における光反射性異方性導電接着剤を用いて発光素子を配線板に実装してなる発光装置について、図2を参照しながら説明する。図2に示す発光装置200は、基板21上の接続端子22と、発光素子としてのLED素子23のn電極24とp電極25とのそれぞれに形成された接続用のバンプ26との間に、上述の光反射性異方性導電接着剤を塗布し、基板21とLED素子23とがフリップチップ実装されている発光装置である。ここで、光反射性異方性導電接着剤の硬化物100は、光反射性絶縁粒子10が熱硬化性樹脂組成物の硬化物11中に分散してなるものである。なお、必要に応じて、LED素子23の全体を覆うように透明モールド樹脂で封止してもよい。
 このように構成されている発光装置200において、LED素子23は、発した光の内、基板21側に向かって発した光が光反射性異方性導電接着剤の硬化物100中の光反射性絶縁粒子10で反射し、LED素子23の上面から出射する。したがって、発光効率の低下を防止することができる。
 発光装置200における光反射性異方性導電接着剤以外の構成(LED素子23、バンプ26、基板21、接続端子22等)は、従来の発光装置の構成と同様とすることができる。また、発光装置200は、本実施の形態における光反射性異方性導電接着剤を使用すること以外は、従来の異方性導電接続技術を利用して製造することができる。なお、発光素子としては、LED素子23の他、本発明の効果を損なわない範囲で公知の発光素子を適用することができる。
 以下、本発明の具体的な実施例について説明する。なお、本発明の範囲は、下記のいずれかの実施例に限定されるものではない。
<実施例1>
(異方性導電接着剤の作製)
 白色針状無機粒子と、球状樹脂の表面を金メッキ処理した導電性粒子(粒径5μm)とをエポキシ硬化系接着剤(CEL2021P-MeHHPAを主成分とした接着性バインダ)からなる熱硬化性樹脂組成物に混合し、異方性導電接着剤を作製した。白色針状無機粒子の添加量は、熱硬化性樹脂組成物に対して12.0体積%とした。白色針状無機粒子としては、長方向粒径1.7μm、短方向粒径0.13μm(アスペクト比13.1)の二酸化チタン(TiO2)ウィスカを使用した。また、導電性粒子の添加量は、熱硬化性樹脂組成物に対して10質量%とした。
(光反射率の評価)
 作製した異方性導電接着剤を白色板上に厚さ100μmとなるように塗布し、200℃で1分間加熱して硬化させた。得られた硬化物について、分光光度計(島津製作所社製 UV3100)を用いて硫酸バリウムを標準とした波長450nmの光に対する全反射率(鏡面反射及び拡散反射)を測定した。
(LED実装サンプルの作製)
 100μmピッチの銅配線にNi/Au(5.0μm厚/0.3μm厚)メッキ処理した配線を有するガラスエポキシ基板に、バンプホルダ(FB700、カイジョー(株))を用いて15μm高の金(Au)バンプを形成した。この金バンプ付きエポキシ基板に、光反射性異方性導電接着剤を用いて、青色LED(Vf=3.2V(If=20mA))素子を200℃、20秒、1kg/チップの条件でフリップチップ実装し、テスト用LEDモジュールを得た。
(全光束量の評価)
 得られたテスト用LEDモジュールについて、全光束量測定システム(積分全球)(LE-2100、大塚電子株式会社製)を用いて全光束量を測定した(測定条件 If=20mA(定電流制御))。
(導通信頼性及びクラック発生の有無の評価)
 導通信頼性及びクラック発生の有無を、冷熱サイクル試験(TCT)により評価した。テスト用LEDモジュールをTCTに入れ、(a)-40℃で30分間←→100℃で30分間、1000サイクル、(b)-55℃、30分←→125℃、30分、1000サイクルを行った。すなわち、(a)-40℃及び100℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行い、また(b)-55℃及び125℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行った。
 導通信頼性の評価は、TCTを1000サイクル行った後に、TCTから取り出したテスト用LEDモジュールについて、If=20mA時のVf値を測定した。初期Vf値からのVf値の上昇分が5%以内である場合には導通信頼性が良好であると判断して「○」とし、初期Vf値からのVf値の上昇分が5%以上である場合には導通信頼性が良好ではないと判断して「×」とした。
 クラック発生の有無の評価は、TCTを1000サイクル行った後に、TCTから取り出したテスト用LEDモジュールについて、金属顕微鏡にて青色LED素子の上面より観察を行い、クラックの発生の有無を観察した。光反射性異方性導電接着剤にクラックの発生が観察されない場合を「○」とし、光反射性異方性導電接着剤にクラックの発生が観察された場合を「×」とした。
 <実施例2>
 白色針状無機粒子として、長方向粒径50μm、短方向粒径3μm(アスペクト比16.7)の酸化亜鉛(ZnO)ウィスカ(パナテトラWZ-05F1、アムテック製)を使用した以外は、実施例1と同様の処理を行った。
 <実施例3>
 白色針状無機粒子として、長方向粒径20μm、短方向粒径0.6μm(アスペクト比33.3)のチタン酸カリウムウィスカ(ティスモシリーズ、大塚化学製)を使用した以外は、実施例1と同様の処理を行った。
 <実施例4>
 白色針状無機粒子として、長方向粒径50μm、短方向粒径3μm(アスペクト比16.7)の酸化亜鉛(ZnO)ウィスカ(パナテトラWZ-05F1、アムテック製)の表面をシランカップリング剤で処理したものを使用した以外は、実施例1と同様の処理を行った。
 <実施例5>
 白色針状無機粒子として、長方向粒径50μm、短方向粒径3μm、アスペクト比16.7である酸化亜鉛(ZnO)ウィスカ(パナテトラWZ-05F1、アムテック製)を、熱硬化性樹脂組成物に対して9.0体積%の割合で添加するとともに、粒径0.6μm(アスペクト比1.0)の酸化亜鉛(ZnO)の白色球状無機粒子(I種、堺化学製)を、熱硬化性樹脂組成物に対して3.0体積%の割合で添加した以外は、実施例1と同様の処理を行った。
 <比較例1>
 異方性導電接着剤に白色針状無機粒子を含有させない以外は、実施例1と同様の処理を行った。
 <比較例2>
 実施例1の白色針状無機粒子に代え、粒径0.9μm(アスペクト比1.0)の酸化チタンの白色球状無機粒子を、熱硬化性樹脂組成物に対して12.0体積%の割合で添加した以外は、実施例1と同様の処理を行った。
 <比較例3>
 実施例1の白色針状無機粒子に代え、0.6μm(アスペクト比1.0)の酸化亜鉛の白色球状無機粒子を、熱硬化性樹脂組成物に対して12.0体積%の割合で添加した以外は、実施例1と同様の処理を行った。
 [表1]に、実施例1~5、比較例1~3の結果を示す。
Figure JPOXMLDOC01-appb-T000001
 [表1]に示す実施例1の結果からわかるように、白色針状無機粒子としてアスペクト比が13.1であるTiO2(二酸化チタン)を熱硬化性樹脂組成物に対して12.0体積%添加した光反射性異方性導電接着剤の硬化物の波長450nmでの反射率は、55%であった。また、この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、350(mlm)であった。球状のTiO2(白色球状無機粒子)を使用した比較例2よりも、反射率及びLEDからの光の取り出し効率は、ともにやや低下した。しかしながら、TCT(-40~100℃)1000サイクル、TCT(-55~125℃)1000サイクル何れの後においてもクラックの発生はなく、耐クラック性が向上した。
 実施例2の結果からわかるように、針状白色無機粒子としてアスペクト比が16.7であるZnO(酸化亜鉛)を熱硬化性樹脂組成物に対して12.0体積%の割合で添加した光反射性異方性導電接着剤の硬化物の波長450nmでの反射率は、35%であった。また、この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、300(mlm)であった。球状のZnO(白色球状無機粒子)を使用した比較例3よりも、反射率及びLEDからの光の取り出し効率は、ともにやや低下した。しかしながら、TCT(-40~100℃)1000サイクル、TCT(-55~125℃)1000サイクル何れの後においてもクラックの発生はなく、耐クラック性が向上した。
 実施例3の結果からわかるように、白色針状無機粒子としてアスペクト比が33.3であるチタン酸カリウムを熱硬化性樹脂組成物に対して12.0体積%の割合で添加した光反射性異方性導電接着剤の硬化物の波長450nmでの反射率は、30%であった。また、この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、250(mlm)であった。粒状のZnO(白色球状無機粒子)を使用した比較例3よりも、反射率及び青色LEDからの光の取り出し効率は、ともにやや低下した。しかしながら、TCT(-40~100℃)1000サイクル、TCT(-55~125℃)1000サイクル何れの後においてもクラックの発生はなく、耐クラック性が向上した。
 実施例4の結果からわかるように、白色針状無機粒子としてアスペクト比が16.7であるZnOを熱硬化性樹脂組成物に対して12.0体積%の割合で添加した光反射性異方性導電接着剤の硬化物の波長450nmでの反射率は、35%であった。また、この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、300(mlm)であった。粒状のZnO(白色球状無機粒子)を使用した比較例3よりも、反射率及びLEDからの光の取り出し効率は、ともにやや低下した。しかしながら、TCT(-40~100℃)1000サイクル、TCT(-55~125℃)1000サイクル何れの後においてもクラックの発生はなく、耐クラック性が向上した。
 実施例5の結果からわかるように、白色針状無機粒子としてアスペクト比が16.7である酸化亜鉛(ZnO)を熱硬化性樹脂組成物に対して9.0体積%の割合で添加するとともに、球状のZnO(白色球状無機粒子)を熱硬化性樹脂組成物に対して3.0体積%の割合で添加した光反射性異方性導電接着剤の硬化物の波長450nmでの反射率は、40%であった。また、この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、250(mlm)であった。白色球状無機粒子として球状の酸化亜鉛(ZnO)を使用した比較例3よりも、反射率及びLEDからの光の取り出し効率は、ともにやや低下した。しかしながら、TCT(-40~100℃)1000サイクル、TCT(-55~125℃)1000サイクル何れの後においてもクラックの発生はなく、耐クラック性が向上した。
 比較例1の結果からわかるように、針状白色無機粒子を添加せず、導電性粒子を熱硬化性樹脂組成物に対して10質量%添加した異方性導電接着剤の硬化物の波長450nmでの反射率は、8%であった。この異方性導電接着剤を用いたLED実装サンプルの全光束量は、200(mlm)であった。青色LEDから出射された波長450nmの光は、金(Au)に吸収されるため、この光に対する反射率が低下し、これにより、青色LEDの発光効率(光取り出し効率)が低くなった。TCT(-40~100℃)1000サイクル、TCT(-55~125℃)1000サイクル何れの後においてもクラックの発生はなかった。
 比較例2の結果からわかるように、二酸化チタン(TiO2)の白色球状無機粒子を熱硬化性樹脂組成物に対して12.0体積%添加した光反射性異方性導電接着剤の波長450nmでの反射率は、62%であった。この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、390(mlm)であった。しかしながら、TCT(-40~100℃)1000サイクル後においてはクラックの発生はなかったものの、TCT(-55~125℃)1000サイクル後においてクラックが発生した。
 比較例3の結果からわかるように、酸化亜鉛(ZnO)の白色球状無機粒子を熱硬化性樹脂組成物に対して12.0体積%添加した光反射性異方性導電接着剤の波長450nmでの反射率は、40%であった。この光反射性異方性導電接着剤を用いたLED実装サンプルの全光束量は、350(mlm)であった。TCT(-40~100℃)1000サイクル後においてはクラックの発生はなかったものの、TCT(-55~125℃)1000サイクル後においてクラックが発生した。
 なお、実施例1~5、比較例1~3の異方導電接着剤では、初期、TCT(-40~100℃)1000サイクル後、TCT(-55~125℃)1000サイクル後の何れにおいても、このような温度変化に対して高い耐性を有し、優れた導通信頼性を発揮することがわかった。
 以上の結果からわかるように、白色針状無機粒子を熱硬化性樹脂組成物に添加した光反射性異方性導電接着剤を用いた実施例1~5では、LED素子から出射された光に対する反射率の低下を抑制し、LED素子の発光効率(光取り出し効率)を向上させることができた。また、実施例1~5における光反射性異方性導電接着剤は、TCT後においても高い耐クラック性を確認できた。これは、針状形状からなる白色針状無機粒子によって熱硬化性樹脂組成物の強靭性を高めることができたためと考えられる。また、実施例1~5の光反射性異方性導電接着剤は、温度変化に対して高い耐性を有し、優れた導通信頼性を発揮することがわかった。
 21 基板、22 接続端子、23 LED素子、24 n電極、25 p電極、26 バンプ、200 発光装置

Claims (10)

  1. 発光素子を配線板に異方性導電接続するために使用する光反射性異方性導電接着剤であって、熱硬化性樹脂、導電性粒子及び光反射性針状絶縁粒子を含有することを特徴とする光反射性異方性導電接着剤。
  2. 上記光反射性針状絶縁粒子が、酸化チタン、酸化亜鉛及びチタン酸塩からなる群より選択される少なくとも1種の無機粒子であることを特徴とする請求項1記載の光反射性異方性導電接着剤。
  3. 上記光反射性針状絶縁粒子が、酸化亜鉛の表面をシラン剤で処理してなることを特徴とする請求項1記載の光反射性異方性導電接着剤。
  4. 上記光反射性針状絶縁粒子のアスペクト比が、10よりも大きく35未満であることを特徴とする請求項1乃至3の何れか1項記載の光反射性異方性導電接着剤。
  5. 上記光反射性針状粒子のアスペクト比が、10よりも大きく20未満であることを特徴とする請求項1乃至3の何れか1項記載の光反射性異方性導電接着剤。
  6. 上記熱硬化性樹脂組成物における上記光反射性針状粒子の配合量が、該熱硬化性樹脂組成物に対して1~50体積%であることを特徴とする請求項1乃至5の何れか1項記載の光反射性異方性導電接着剤。
  7. 光反射性球状絶縁粒子を更に含むことを特徴とする請求項1乃至6の何れか1項記載の光反射性異方性導電接着剤。
  8. 上記光反射性針状絶縁粒子は、上記光反射性球状絶縁粒子の体積量と同量以上の体積量で含有されていることを特徴とする請求項7記載の光反射性異方性導電接着剤。
  9. 請求項1乃至8の何れか1項記載の光反射性異方性導電接着剤を介して、発光素子がフリップチップ方式で配線板に実装されていることを特徴とする発光装置。
  10. 上記発光素子は、発光ダイオードであることを特徴とする請求項9記載の発光装置。
PCT/JP2011/059194 2010-04-13 2011-04-13 光反射性異方性導電接着剤及び発光装置 WO2011129373A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US13/640,784 US8916894B2 (en) 2010-04-13 2011-04-13 Light-reflective anisotropic conductive adhesive agent, and light emitting device
EP11768894.5A EP2560198A4 (en) 2010-04-13 2011-04-13 LIGHT REFLECTIVE AND ELECTRICALLY CONDUCTIVE ANISOTROPIC ADHESIVE AND LIGHT-EMITTING DEVICE THEREFOR
CN201180018769.0A CN102859673B (zh) 2010-04-13 2011-04-13 光反射性各向异性导电粘接剂及发光装置
KR1020117015024A KR20130049689A (ko) 2010-04-13 2011-04-13 광반사성 이방성 도전 접착제 및 발광 장치
HK13105913.8A HK1178320A1 (zh) 2010-04-13 2013-05-20 光反射性各向異性導電粘接劑及發光裝置
US14/543,550 US9260634B2 (en) 2010-04-13 2014-11-17 Light-reflective anisotropic conductive adhesive agent, and light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010092672A JP5555038B2 (ja) 2010-04-13 2010-04-13 光反射性異方性導電接着剤及び発光装置
JP2010-092672 2010-04-13

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/640,784 A-371-Of-International US8916894B2 (en) 2010-04-13 2011-04-13 Light-reflective anisotropic conductive adhesive agent, and light emitting device
US14/543,550 Continuation US9260634B2 (en) 2010-04-13 2014-11-17 Light-reflective anisotropic conductive adhesive agent, and light emitting device

Publications (1)

Publication Number Publication Date
WO2011129373A1 true WO2011129373A1 (ja) 2011-10-20

Family

ID=44798744

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/059194 WO2011129373A1 (ja) 2010-04-13 2011-04-13 光反射性異方性導電接着剤及び発光装置

Country Status (8)

Country Link
US (2) US8916894B2 (ja)
EP (1) EP2560198A4 (ja)
JP (1) JP5555038B2 (ja)
KR (1) KR20130049689A (ja)
CN (1) CN102859673B (ja)
HK (1) HK1178320A1 (ja)
TW (1) TWI513783B (ja)
WO (1) WO2011129373A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150197672A1 (en) * 2012-09-24 2015-07-16 Dexerials Corporation Anisotropic conductive adhesive and connection structure

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6107117B2 (ja) 2012-03-22 2017-04-05 豊田合成株式会社 固体装置及びその製造方法
JP5958107B2 (ja) * 2012-06-15 2016-07-27 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
JP6107024B2 (ja) * 2012-09-26 2017-04-05 日亜化学工業株式会社 発光装置およびその製造方法
KR101716548B1 (ko) * 2014-09-17 2017-03-14 삼성에스디아이 주식회사 이방 도전성 필름 및 이를 이용한 반도체 장치
JP6217705B2 (ja) * 2015-07-28 2017-10-25 日亜化学工業株式会社 発光装置及びその製造方法
TWM521008U (zh) * 2016-01-27 2016-05-01 Lite On Technology Corp 車燈裝置及其發光模組
KR20190015652A (ko) * 2017-08-03 2019-02-14 (주)트러스 압축변형이 가능한 도전성 파우더를 이용한 도전성 점착테이프 및 이의 제조방법
KR102115189B1 (ko) * 2018-11-09 2020-05-26 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0859890A (ja) * 1994-06-16 1996-03-05 Mitsui Mining & Smelting Co Ltd 被覆酸化亜鉛粉末及び被覆酸化亜鉛粉末含有組成物
JPH11168235A (ja) 1997-12-05 1999-06-22 Toyoda Gosei Co Ltd 発光ダイオード
JP2001234152A (ja) * 2000-02-24 2001-08-28 Sumitomo Metal Mining Co Ltd 導電性接着剤
JP2004258105A (ja) * 2003-02-24 2004-09-16 Tomoegawa Paper Co Ltd 異方性光拡散粘着積層体、多層シート、光学積層体並びに照明装置
JP2005330327A (ja) * 2004-05-18 2005-12-02 Sumitomo Metal Mining Co Ltd エポキシ樹脂組成物及びそれを用いた光半導体用接着剤
JP2007131677A (ja) * 2005-11-08 2007-05-31 Sumitomo Metal Mining Co Ltd エポキシ樹脂接着組成物及びそれを用いた光半導体用接着剤
WO2008023605A1 (fr) * 2006-08-23 2008-02-28 Mitsui Chemicals, Inc. Corps réfléchissant la lumière et source de lumière le comprenant
JP2008192880A (ja) * 2007-02-06 2008-08-21 Nichia Chem Ind Ltd 発光装置及びその製造方法並びに発光装置用成形体
JP2010092672A (ja) 2008-10-06 2010-04-22 Harison Toshiba Lighting Corp バックライト装置および表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256687A (ja) * 1997-03-14 1998-09-25 Matsushita Electric Ind Co Ltd ビアホール充填用導体ペースト組成物とそれを用いたプリント配線基板
TW200500739A (en) 2002-11-14 2005-01-01 Tomoegawa Paper Co Ltd Anisotropic light diffusing adhesive layer, laminated body of anisotropic light diffusing adhesive layers, and illumination device therewith
JP4951937B2 (ja) * 2005-10-28 2012-06-13 日亜化学工業株式会社 発光装置
JP4802667B2 (ja) * 2005-11-08 2011-10-26 住友金属鉱山株式会社 エポキシ樹脂接着組成物及びそれを用いた光半導体用接着剤
WO2007089599A2 (en) * 2006-01-31 2007-08-09 3M Innovative Properties Company Led illumination assembly with compliant foil construction
JP2007258324A (ja) * 2006-03-22 2007-10-04 Matsushita Electric Ind Co Ltd 発光装置の製造方法および発光装置
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0859890A (ja) * 1994-06-16 1996-03-05 Mitsui Mining & Smelting Co Ltd 被覆酸化亜鉛粉末及び被覆酸化亜鉛粉末含有組成物
JPH11168235A (ja) 1997-12-05 1999-06-22 Toyoda Gosei Co Ltd 発光ダイオード
JP2001234152A (ja) * 2000-02-24 2001-08-28 Sumitomo Metal Mining Co Ltd 導電性接着剤
JP2004258105A (ja) * 2003-02-24 2004-09-16 Tomoegawa Paper Co Ltd 異方性光拡散粘着積層体、多層シート、光学積層体並びに照明装置
JP2005330327A (ja) * 2004-05-18 2005-12-02 Sumitomo Metal Mining Co Ltd エポキシ樹脂組成物及びそれを用いた光半導体用接着剤
JP2007131677A (ja) * 2005-11-08 2007-05-31 Sumitomo Metal Mining Co Ltd エポキシ樹脂接着組成物及びそれを用いた光半導体用接着剤
WO2008023605A1 (fr) * 2006-08-23 2008-02-28 Mitsui Chemicals, Inc. Corps réfléchissant la lumière et source de lumière le comprenant
JP2008192880A (ja) * 2007-02-06 2008-08-21 Nichia Chem Ind Ltd 発光装置及びその製造方法並びに発光装置用成形体
JP2010092672A (ja) 2008-10-06 2010-04-22 Harison Toshiba Lighting Corp バックライト装置および表示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150197672A1 (en) * 2012-09-24 2015-07-16 Dexerials Corporation Anisotropic conductive adhesive and connection structure
CN104520398B (zh) * 2012-09-24 2017-10-17 迪睿合电子材料有限公司 各向异性导电粘合剂及连接结构体

Also Published As

Publication number Publication date
TWI513783B (zh) 2015-12-21
JP2011222875A (ja) 2011-11-04
US8916894B2 (en) 2014-12-23
KR20130049689A (ko) 2013-05-14
US9260634B2 (en) 2016-02-16
CN102859673B (zh) 2015-09-09
EP2560198A1 (en) 2013-02-20
JP5555038B2 (ja) 2014-07-23
HK1178320A1 (zh) 2013-09-06
US20130049054A1 (en) 2013-02-28
US20150069448A1 (en) 2015-03-12
TW201211178A (en) 2012-03-16
EP2560198A4 (en) 2014-08-06
CN102859673A (zh) 2013-01-02

Similar Documents

Publication Publication Date Title
JP5609716B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP5617210B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP5555038B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP5526698B2 (ja) 光反射性導電粒子、異方性導電接着剤及び発光装置
JP5402804B2 (ja) 発光装置の製造方法
US9670384B2 (en) Light-reflective anisotropic conductive adhesive and light-emitting device
WO2012144033A1 (ja) 光反射性導電粒子、異方性導電接着剤及び発光装置
WO2014013984A1 (ja) 光反射性異方性導電接着剤及び発光装置
JP5785306B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP2014030026A (ja) 異方性導電接着剤及び発光装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180018769.0

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 20117015024

Country of ref document: KR

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11768894

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2011768894

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13640784

Country of ref document: US