WO2011122377A1 - 半導体製造装置用耐食性部材及びその製法 - Google Patents

半導体製造装置用耐食性部材及びその製法 Download PDF

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WO2011122377A1
WO2011122377A1 PCT/JP2011/056624 JP2011056624W WO2011122377A1 WO 2011122377 A1 WO2011122377 A1 WO 2011122377A1 JP 2011056624 W JP2011056624 W JP 2011056624W WO 2011122377 A1 WO2011122377 A1 WO 2011122377A1
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Prior art keywords
corrosion
oxide
resistant member
semiconductor manufacturing
sintered body
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PCT/JP2011/056624
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English (en)
French (fr)
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守道 渡邊
勝田　祐司
早瀬　徹
明日美 神藤
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日本碍子株式会社
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Priority to JP2012508218A priority Critical patent/JP5819816B2/ja
Priority to KR1020127024757A priority patent/KR101400598B1/ko
Priority to CN201180015793.9A priority patent/CN102822115B/zh
Publication of WO2011122377A1 publication Critical patent/WO2011122377A1/ja
Priority to US13/624,087 priority patent/US8679998B2/en

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Definitions

  • the present invention relates to a corrosion-resistant member for semiconductor manufacturing equipment and a method for manufacturing the same.
  • Patent Document 1 discloses a thin film of Yb 2 O 3 or Dy 2 O 3 formed by a PVD method. These thin films have an extremely low etching rate in plasma compared to an alumina sintered body or the like.
  • the present invention has been made in order to solve such problems, and provides a corrosion-resistant member for a semiconductor manufacturing apparatus that has a lower etching rate than that of a conventionally known sintered body.
  • the main purpose is to solve such problems, and provides a corrosion-resistant member for a semiconductor manufacturing apparatus that has a lower etching rate than that of a conventionally known sintered body. The main purpose.
  • the present inventors diligently examined the applicability of rare earth oxide sintered bodies as corrosion resistant members for semiconductor manufacturing equipment, and when some of the rare earth oxide sintered bodies satisfy specific physical properties. In addition, the inventors have found that the effect of suppressing the etching rate is remarkably increased, and have completed the present invention.
  • the corrosion-resistant member for a semiconductor manufacturing apparatus of the present invention has an open porosity of 0.3% or less, and at least one sintered body selected from the group consisting of ytterbium oxide, holmium oxide, dysprosium oxide and erbium oxide. It consists of
  • the method for producing a corrosion-resistant member for a semiconductor manufacturing apparatus comprises: (a) a sintering aid comprising at least one oxide raw material selected from the group consisting of ytterbium oxide, holmium oxide, dysprosium oxide and erbium oxide.
  • the target corrosion-resistant member for semiconductor manufacturing equipment After forming into the shape of the target corrosion-resistant member for semiconductor manufacturing equipment without using it, it is hot-press fired at a predetermined firing temperature in an inert atmosphere, or (b) from the group consisting of Mg, Ca and Sr After being formed into the shape of a target corrosion-resistant member for semiconductor manufacturing equipment together with a sintering aid that is a fluoride of at least one element selected, hot press firing at a temperature lower than the predetermined firing temperature in an inert atmosphere By doing so, the oxide raw material is sintered to obtain a sintered body having an open porosity of 0.3% or less.
  • the corrosion-resistant member for a semiconductor manufacturing apparatus of the present invention since the etching rate can be suppressed smaller than the yttria sintered body and the alumina sintered body known so far, the amount of dust generated from the corrosion-resistant member is reduced. Reduced and can withstand long reactive F, Cl-based plasmas used in semiconductor manufacturing processes. These materials have a high volume resistivity of 1 ⁇ 10 15 ⁇ ⁇ cm or more, and are suitable as an electrostatic chuck or a heater material.
  • the manufacturing method of the corrosion-resistant member for semiconductor manufacturing apparatuses of this invention is suitable for manufacturing such a corrosion-resistant member. In particular, when a sintering aid is added, a dense body can be obtained at a low temperature, thereby reducing the manufacturing cost.
  • FIG. 6 is a reflected electron image obtained by photographing a cross section (polished surface) of a sintered body of Example 7.
  • FIG. It is the secondary electron image which image
  • the corrosion-resistant member for a semiconductor manufacturing apparatus of the present invention has an open porosity of 0.3% or less, and is made of at least one sintered body selected from the group consisting of ytterbium oxide, holmium oxide, dysprosium oxide and erbium oxide. Is.
  • the sintered body at least one kind of sintered body selected from the group consisting of ytterbium oxide, holmium oxide, dysprosium oxide and erbium oxide is used.
  • these are sintered bodies of rare earth oxides even sintered bodies of rare earth oxides, for example, sintered bodies of gadolinium oxide have a problem in densification, and sintered bodies of europium oxide can be densified.
  • the sintered body a plurality of types of sintered bodies selected from the above group can be used, but one type of sintered body selected from the group may be used.
  • the oxide raw material used for producing the sintered body is preferably as the amount of impurity metal is small, and is preferably 0.1 wt% or less of the oxide, for example.
  • the open porosity is a value measured by the Archimedes method using pure water as a medium. If the open porosity exceeds 0.3%, the etching rate is increased and the strength is lowered, which is not preferable.
  • the open porosity is preferably as close to zero as possible. For this reason, there is no lower limit in particular.
  • a grain boundary phase containing at least one selected from the group consisting of Mg, Ca and Sr and at least one of O and F is dispersed in the sintered body.
  • the grain boundary phase containing MgO may be dispersed, or the grain boundary phase containing Ca and F may be dispersed.
  • a grain boundary phase is produced when fired together with a sintering aid (for example, MgF 2 or CaF 2 ) containing Mg, Ca, or Sr.
  • a sintering aid for example, MgF 2 or CaF 2
  • a material having a bulk density of 8.8 to 9.2 g / cm 3 and made of a sintered body of ytterbium oxide is a good example.
  • the etching rate can be sufficiently suppressed, but also the strength is increased by dispersing the aforementioned grain boundary phase.
  • a good example is a material having a bulk density of 8.1 to 8.4 g / cm 3 and made of a sintered body of holmium oxide.
  • At least one oxide raw material selected from the group consisting of ytterbium oxide, holmium oxide, dysprosium oxide and erbium oxide is used (a) using a sintering aid.
  • a sintering aid After forming into the shape of the desired corrosion-resistant member for semiconductor manufacturing equipment, it is selected from the group consisting of (b) Mg, Ca and Sr by hot press firing at a predetermined firing temperature in an inert atmosphere.
  • the inert atmosphere may be an atmosphere that does not affect the firing of the oxide raw material, and examples thereof include a nitrogen atmosphere, an argon atmosphere, and a helium atmosphere.
  • the firing temperature and the press pressure at the time of hot pressing may be any temperature and pressure that can provide a dense sintered body having an open porosity of 0.3% or less, and are appropriately determined depending on the type of the oxide raw material. You only have to set it.
  • the firing temperature may be set between 1500 and 1800 ° C.
  • the press pressure may be set between 100 and 300 kgf / cm 2 .
  • the pressure at the time of molding is not particularly limited, and may be appropriately set to a pressure capable of maintaining the shape.
  • Yb 2 O 3 , Er 2 O 3 , Ho 2 O 3 , Dy 2 O 3 , Gd 2 O 3 , Nd 2 O 3 , Eu 2 O 3 , and Y 2 O 3 raw materials have a purity of 99.9% or more, average Commercial powder having a particle size of 1 ⁇ m or less was used.
  • Al 2 O 3 raw material a commercially available powder having a purity of 99.5% or more and an average particle diameter of 0.5 ⁇ m was used.
  • MgF 2 raw material a commercially available powder having a purity of 99.9% or more was pre-ground to 0.5 to 1 ⁇ m as required.
  • the same CaF 2 raw material was used.
  • the preliminary pulverization was performed by pot mill pulverization using isopropyl alcohol as a solvent and zirconia cobblestone.
  • Examples 1 to 7, Comparative Examples 1 to 6 a corrosion-resistant member for a semiconductor manufacturing apparatus was produced using a rare earth oxide raw material in a simple manner. Specifically, first, the rare earth oxide raw material powder shown in Table 1 is uniaxially pressed at a pressure of 200 kgf / cm 2 to produce a disk-shaped molded body having a diameter of about 50 mm and a thickness of about 10 mm, and a graphite mold for firing. Stored. Next, firing was performed at a predetermined firing temperature (see Table 1) using a hot press method to obtain a corrosion-resistant member for a semiconductor manufacturing apparatus. The press pressure during firing was 200 kgf / cm 2, and an Ar atmosphere was maintained until the end of firing. The holding time at the firing temperature (maximum temperature) was 4 hours.
  • a corrosion-resistant member for a semiconductor manufacturing apparatus was produced using two kinds of rare earth oxide raw materials. Specifically, first, two kinds of rare earth oxide raw material powders shown in Table 1 were weighed, and wet mixed for 4 hours using nylon pots and ⁇ 5 mm alumina cobblestones using isopropyl alcohol as a solvent. After mixing, the slurry was taken out and dried at 110 ° C. in a nitrogen stream. Thereafter, it was passed through a 30-mesh sieve to obtain a mixed powder. Using this prepared powder, molding and firing were performed in the same manner as in Examples 1 to 5 and Comparative Examples 1 to 6. Incidentally, notation "Yb 2 O 3 / 25mol% Ho 2 O 3 " in Table 1 means that it is formulated powder plus Ho 2 O 3 of 25 mol% to Yb 2 O 3 of 100 mol%.
  • Each obtained sintered body was processed for various evaluations, and the following evaluations were performed. Each evaluation result is shown in Table 1.
  • D8 ADVANCE manufactured by Bruker AXS
  • the grain boundary phase in the composite material was evaluated from SEM / EDS observation of the sintered body that was mirror-polished with the crystal phase of the sintered body.
  • Etching rate The surface of each sintered body was polished to a mirror surface and subjected to a corrosion resistance test under the following conditions using an ICP plasma corrosion resistance test apparatus. The etching rate of each material was calculated by dividing the step between the unexposed surface and the exposed surface measured by a surface roughness meter by the test time.
  • ICP 800 W
  • bias 450 W
  • exposure time 10 h
  • sample temperature room temperature
  • Chemical analysis Amount of impurity metal in sintered body (Metal elements other than Yb, Ho, Dy, Er, Mg, Ca, and Sr) are obtained by inductively coupled plasma (ICP) emission spectrum analysis and inductively coupled plasma (ICP) mass spectrometry.
  • Volume resistivity measurement It measured in air
  • test piece was ⁇ 50 mm ⁇ 0.5 to 1 mm, each electrode was formed of silver so that the main electrode had a diameter of 20 mm, the guard electrode had an inner diameter of 30 mm, an outer diameter of 40 mm, and the applied electrode had a diameter of 40 mm.
  • the applied voltage was 2 kV / mm, the current value at 1 minute after the voltage application was read, and the room temperature volume resistivity was calculated from the current value.
  • Example 5 The reason why the corrosion resistance was improved in Example 5 is presumed that the overall corrosion resistance was improved by firing at a higher temperature, resulting in a coarser grain size and a relatively low corrosion-resistant grain boundary area.
  • the materials of Examples 1 to 5 had a high volume resistivity of 1 ⁇ 10 15 ⁇ ⁇ cm or more, and were suitable as electrostatic chucks or heater materials.
  • Example 6 a powder mixture of Yb 2 O 3 and Ho 2 O 3 was used, and in Example 7, a powder mixture of Yb 2 O 3 and Er 2 O 3 was used and densified at a firing temperature of 1500 ° C.
  • the corrosion resistance was superior to Comparative Examples 1 to 6, and the strength and the volume resistivity tended to be higher than those of Example 1 (simple).
  • Comparative Examples 1 and 2 when Y 2 O 3 and Al 2 O 3 were fired at 1500 and 1700 ° C., respectively, they were densified, but the corrosion resistance was inferior to those of Examples 1 to 4.
  • Comparative Example 3 when Yb 2 O 3 was fired at 1300 ° C., the corrosion resistance was inferior to that of Examples 1 to 4 because the open porosity was 4.6% and there were many pores.
  • Comparative Examples 4 and 5 were fired respectively Gd 2 O 3, Eu 2 O 3 at 1500 °C, Gd 2 O 3 because often open porosity of 2.5% and pores, corrosion resistance Examples 1-4 It was inferior.
  • Eu 2 O 3 has very low corrosion resistance at the grain boundary, and it is considered that corrosion has progressed due to the penetration of fluorine into the sintered body through the grain boundary.
  • Yb 2 O 3 , Er 2 O 3 , Ho 2 O 3 , and Dy 2 O 3 are presumed to be one of the factors that the corrosion resistance of rare earth oxides is higher than that of Eu 2 O 3. Yes.
  • Nd 2 O 3 was fired at 1500 ° C., but the sintered body collapsed within a few days of atmospheric storage, and evaluation was impossible.
  • Example 8 to 15 a corrosion-resistant member for a semiconductor manufacturing apparatus was prepared using a mixed powder of a rare earth oxide and a fluoride of a group 2A element (alkaline earth metal). Specifically, first, the rare earth oxides shown in Table 2 and the fluorides of Group 2A elements were weighed, and wet mixed for 4 hours using isopropyl alcohol as a solvent and a nylon pot and ⁇ 5 mm alumina cobblestone. After mixing, the slurry was taken out and dried at 110 ° C. in a nitrogen stream. Thereafter, it was passed through a 30-mesh sieve to obtain a mixed powder.
  • a rare earth oxides shown in Table 2 and the fluorides of Group 2A elements were weighed, and wet mixed for 4 hours using isopropyl alcohol as a solvent and a nylon pot and ⁇ 5 mm alumina cobblestone. After mixing, the slurry was taken out and dried at 110 ° C. in a nitrogen stream. Thereafter, it was passed through a 30-
  • the blended powder was uniaxially pressed at a pressure of 200 kgf / cm 2 to prepare a disk-shaped molded body having a diameter of about 35 mm and a thickness of about 10 mm, and stored in a firing graphite mold.
  • firing was performed at a predetermined firing temperature (Table 2) using a hot press method to obtain a corrosion-resistant member for a semiconductor manufacturing apparatus.
  • the press pressure during firing was 200 kgf / cm 2, and an Ar atmosphere was maintained until the end of firing.
  • the holding time at the firing temperature (maximum temperature) was 4 hours.
  • notation "Yb 2 O 3 / 1vol% MgF 2 " in Table 2 means that a formulated powder plus MgF 2 of 1 vol% to Yb 2 O 3 of 100 vol%.
  • Example 8 was added a predetermined amount of MgF 2 shown in Yb 2 O 3 in Table 2, were densified at sintering temperature 1300 ° C., MgF 2 and Yb 2 O 3 reacts during sintering, Granular MgO and YbOF phases were formed in the Yb 2 O 3 matrix (see FIG. 1).
  • the addition of fluoride enabled dense sintering, and the corrosion resistance was equivalent to Example 1.
  • the grain boundary phase was introduced in a dispersed manner, the strength was higher than in Example 1.
  • Example 10 were added CaF 2 in a predetermined amount shown in Yb 2 O 3 in Table 2, were densified at sintering temperature 1200 ⁇ 1300 °C, Yb 2 O 3 Ca in the matrix, mainly F A grain boundary phase was formed (see FIG. 2).
  • the addition of fluoride enabled dense sintering, and the corrosion resistance was almost equivalent to Example 1.
  • the grain boundary phase was introduced in a dispersed manner, the strength was higher than in Example 1.
  • Examples 12 and 13 when a predetermined amount of MgF 2 shown in Table 2 was added to Ho 2 O 3 and densified at a firing temperature of 1300 ° C., MgF 2 and Ho 2 O 3 reacted to form granular MgO and HoOF phases in the Ho 2 O 3 matrix.
  • the firing temperature was lower than that in Example 3, dense sintering was possible by the addition of fluoride, and the corrosion resistance was equivalent to Example 3. Further, the grain boundary phase was dispersed and introduced, so that the strength was higher than in Example 3.
  • Examples 14 and 15 when a predetermined amount of CaF 2 shown in Table 2 was added to Ho 2 O 3 and densified at a firing temperature of 1300 ° C., as in Examples 10 and 11, in the Yb 2 O 3 matrix. A grain boundary phase mainly composed of Ca and F was formed. In Examples 14 and 15, although the firing temperature was lower than that in Example 3, dense sintering was possible by addition of fluoride, and the corrosion resistance was almost equivalent to Example 3. Further, the grain boundary phase was dispersed and introduced, so that the strength was higher than in Example 3.
  • Examples 9 to 11 and 13 to 15 had a high volume resistivity of 1 ⁇ 10 15 ⁇ ⁇ cm or more, and were suitable as electrostatic chucks or heater materials. Similar characteristics are also expected for Examples 8 and 12.
  • Example 16 and 17 the sintered body (Yb 2 O 3 ⁇ 1500 ° C. fired product) obtained in Example 1 was processed to a thickness of 1 mm, and each was 1100 ° C. for 10 hours and 1200 ° C. for 10 hours, and the atmosphere Annealing treatment was performed.
  • Example 18 the sintered body obtained in Example 5 (Yb 2 O 3 ⁇ 1800 ° C. fired product), and in Examples 19 and 20, the sintered bodies obtained in Examples 6 and 7 (respectively, Yb 2 O 3 —Ho 2 O 3 solid solution, Yb 2 O 3 —Er 2 O 3 solid solution) were processed to a thickness of 1 mm and subjected to atmospheric annealing at 1200 ° C. for 10 hours.
  • Example 16 the corrosion resistance was improved and the volume resistivity was high as compared with the sintered body before the atmospheric annealing treatment.
  • the Yb 2 O 3 fired product changed from ivory color to white (Examples 16 to 18), and the Yb 2 O 3 —Ho 2 O 3 solid solution changed from orange brown to orange white (Example 19). ), Yb 2 O 3 —Er 2 O 3 solid solution changed from reddish brown to pink (Example 20). It is presumed that by performing atmospheric annealing after firing, oxygen vacancies and the like contained in the sintered body are reduced, and the crystallinity is improved to further improve the corrosion resistance and volume resistivity.
  • the present invention is applicable to a semiconductor manufacturing apparatus used when performing a dry process or plasma coating in semiconductor manufacturing.

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Abstract

　まず、Ｙｂ2Ｏ3原料粉末を、２００ｋｇｆ／ｃｍ２の圧力で一軸加圧成形し、φ３５ｍｍ、厚さ１０ｍｍ程度の円盤状成形体を作製し、焼成用黒鉛モールドに収納した。次いで、ホットプレス法を用いて所定の焼成温度（１５００℃）で焼成を行い、半導体製造装置用耐食性部材を得た。焼成時のプレス圧力は２００ｋｇｆ／ｃｍ２とし、焼成終了までＡｒ雰囲気とした。焼成温度（最高温度）での保持時間は４時間とした。これにより、開気孔率０．２％のＹｂ2Ｏ3焼結体からなる半導体製造装置用耐食性部材を得た。

Description

半導体製造装置用耐食性部材及びその製法
　本発明は、半導体製造装置用耐食性部材及びその製法に関する。
　半導体製造におけるドライプロセスやプラズマコーティングなどを実施する際に利用される半導体製造装置では、エッチング、クリーニング用として、反応性の高いＦ、Ｃｌ系プラズマが使用される。このため、こうした装置に利用される部材には高い耐食性が必要であり、静電チャックやヒーター等のＳｉウエハと接する部材は更なる高耐食が求められる。このような要求に応えられる耐食性部材として、特許文献１には、ＰＶＤ法によって形成されたＹｂ2Ｏ3やＤｙ2Ｏ3の薄膜が開示されている。これらの薄膜は、プラズマ中でのエッチングレートがアルミナ焼結体などと比べて非常に小さくなっている。
特開２００２－２２２８０３号公報
　しかし、薄膜は成膜時に気孔やクラックが内在し易いためプラズマによる腐食が進み易く、更に基材との性質の違いや密着性の問題によって腐食の進行及び繰返し使用に伴う剥離等によってデバイス特性に影響を与える可能性があり、静電チャック等への適用には問題があった。これらの部材には焼結体が好適だが、上述の特許文献１では、ＰＶＤ法によって形成されたＹｂ2Ｏ3やＤｙ2Ｏ3の薄膜について評価されているものの、焼結体については評価されていなかった。耐食性部材としては、Ｙ2Ｏ3やＡｌ2Ｏ3の焼結体が知られているものの、よりエッチングレートを小さく抑えることのできる焼結体材料の開発が望まれていた。
　本発明はこのような課題を解決するためになされたものであり、半導体製造装置用耐食性部材として、これまでに知られている焼結体に比べてエッチングレートをより小さく抑えるものを提供することを主目的とする。
　本発明者らは、半導体製造装置用耐食性部材として、希土類酸化物の焼結体の適用可能性を鋭意検討したところ、そのうちの一部の希土類酸化物の焼結体が特定の物性を満たすときにエッチングレートの抑制効果が格段に高くなることを見いだし、本発明を完成するに至った。
　すなわち、本発明の半導体製造装置用耐食性部材は、開気孔率が０．３％以下であり、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の焼結体からなるものである。
　また、本発明の半導体製造装置用耐食性部材の製法は、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の酸化物原料を、（ａ）焼結助剤を用いることなく目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、所定の焼成温度でホットプレス焼成することにより、又は、（ｂ）Ｍｇ，Ｃａ及びＳｒからなる群より選ばれる少なくとも１種の元素のフッ化物である焼結助剤と共に目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、前記所定の焼成温度より低い温度でホットプレス焼成することにより、前記酸化物原料を焼結させて開気孔率が０．３％以下の焼結体を得るものである。
　本発明の半導体製造装置用耐食性部材によれば、これまでに知られているイットリア焼結体やアルミナ焼結体に比べてエッチングレートをより小さく抑えることできるため、耐食性部材からの発塵量が低減し、半導体製造プロセスにおいて使用される反応性の高いＦ、Ｃｌ系プラズマに長期間耐えることができる。これらの材料は体積抵抗率が１×１０15Ω・ｃｍ以上と高く、静電チャックやヒーター材としても好適である。また、本発明の半導体製造装置用耐食性部材の製法は、こうした耐食性部材を製造するのに適している。特に、焼結助剤を加えたときには、低温で緻密体が得られるため、製造コストが低減される。
実施例７の焼結体の断面（研磨面）を撮影した反射電子像である。 実施例９の焼結体の断面（研磨面）を撮影した二次電子像である。
　本発明の半導体製造装置用耐食性部材は、開気孔率が０．３％以下であり、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の焼結体からなるものである。
　焼結体としては、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の焼結体を用いる。これらは希土類酸化物の焼結体であるが、希土類酸化物の焼結体であっても、例えば酸化ガドリニウムの焼結体は緻密化に問題があり、酸化ユウロピウムの焼結体は緻密化可能であるがエッチングレートを十分抑制できないため適切でなく、酸化ネオジムの焼結体は大気保管中に崩壊してしまうため適切でない。また、焼結体としては、前出の群より選ばれた複数種の焼結体を用いることもできるが、その群より選ばれた１種の焼結体を用いてもよい。焼結体を作製する際に用いる酸化物原料は、不純物金属量が少ないほど好ましく、例えば酸化物の０．１ｗｔ％以下であることが好ましい。
　開気孔率は、ここでは純水を媒体としたアルキメデス法により測定した値とする。開気孔率が０．３％を超えると、エッチングレートが高くなったり強度が低下したりするため、好ましくない。開気孔率は、できるだけゼロに近いほど好ましい。このため、特に下限値は存在しない。
　本発明の半導体製造装置用耐食性部材において、焼結体には、Ｍｇ，Ｃａ及びＳｒからなる群より選ばれた少なくとも１種とＯ及びＦの少なくとも１種とを含む粒界相が分散していてもよい。例えば、ＭｇＯを含む粒界相が分散していたり、Ｃａ，Ｆを含む粒界相が分散していてもよい。このような粒界相は、Ｍｇ，Ｃａ又はＳｒを含む焼結助剤（例えばＭｇＦ2とかＣａＦ2など）と共に焼成したときに生成するものであるが、そのような焼結助剤を用いると焼成温度を低くすることができるため、その分、消費エネルギーが少なくなり製造コストが低減する。
　本発明の半導体製造装置用耐食性部材としては、嵩密度が８．８～９．２ｇ／ｃｍ3であり、酸化イッテルビウムの焼結体からなるものが好例として挙げられる。この場合、エッチングレートを十分抑制できるばかりでなく、前述の粒界相を分散させることにより強度も高くなる。また、嵩密度が８．１～８．４ｇ／ｃｍ3であり、酸化ホルミウムの焼結体からなるものも好例として挙げられる。
　本発明の半導体製造装置用耐食性部材の製法は、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の酸化物原料を、（ａ）焼結助剤を用いることなく目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、所定の焼成温度でホットプレス焼成することにより、又は、（ｂ）Ｍｇ，Ｃａ及びＳｒからなる群より選ばれる少なくとも１種の元素のフッ化物である焼結助剤と共に目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、前記所定の焼成温度より低い温度でホットプレス焼成することにより、前記酸化物原料を焼結させて開気孔率が０．３％以下の焼結体を得るものである。この製法は、本発明の半導体製造装置用耐食性部材を得るのに好適である。
　ここで、不活性雰囲気とは、酸化物原料の焼成に影響を及ぼさない雰囲気であればよく、例えば窒素雰囲気やアルゴン雰囲気、ヘリウム雰囲気などが挙げられる。また、ホットプレス時の焼成温度及びプレス圧力は、開気孔率が０．３％以下の緻密な焼結体が得られるような温度及び圧力であればよく、酸化物原料の種類に応じて適宜設定すればよい。例えば、焼成温度を１５００～１８００℃の間で設定し、プレス圧力を１００～３００ｋｇｆ／ｃｍ2の間で設定してもよい。更に、成形時の圧力は、特に制限するものではなく、形状を保持することのできる圧力に適宜設定すればよい。
　以下に、本発明の好適な実施例について説明する。Ｙｂ2Ｏ3，Ｅｒ2Ｏ3，Ｈｏ2Ｏ3，Ｄｙ2Ｏ3，Ｇｄ2Ｏ3，Ｎｄ2Ｏ3，Ｅｕ2Ｏ3，Ｙ2Ｏ3原料は、純度９９．９％以上、平均粒径１μｍ以下の市販粉末を使用した。Ａｌ2Ｏ3原料は純度９９．５％以上の平均粒径０．５μｍの市販粉末を使用した。ＭｇＦ2原料は、純度９９．９％以上の市販粉末を必要に応じて０．５～１μｍに予備粉砕したものを使用した。ＣａＦ2原料についても同様のものを使用した。なお、予備粉砕は溶媒をイソプロピルアルコールとし、ジルコニア製玉石を使用してポットミル粉砕した。
［実施例１～７，比較例１～６］
　実施例１～５，比較例１～６では、希土類酸化物原料を単味で用いて、半導体製造装置用耐食性部材を作製した。具体的には、まず、表１に示す希土類酸化物原料粉末を、２００ｋｇｆ／ｃｍ２の圧力で一軸加圧成形し、φ５０ｍｍ、厚さ１０ｍｍ程度の円盤状成形体を作製し、焼成用黒鉛モールドに収納した。次いで、ホットプレス法を用いて所定の焼成温度（表１参照）で焼成を行い、半導体製造装置用耐食性部材を得た。焼成時のプレス圧力は２００ｋｇｆ／ｃｍ２とし、焼成終了までＡｒ雰囲気とした。焼成温度（最高温度）での保持時間は４時間とした。
　実施例６，７では、２種類の希土類酸化物原料を用いて、半導体製造装置用耐食性部材を作製した。具体的には、まず、表１に示す２種類の希土類酸化物原料粉末を秤量し、イソプロピルアルコールを溶媒とし、ナイロン製のポット、φ５ｍｍのアルミナ玉石を用いて４時間湿式混合した。混合後スラリーを取り出し、窒素気流中１１０℃で乾燥した。その後３０メッシュの篩に通し、調合粉末とした。この調合粉末を用いて、実施例１～５，比較例１～６と同様にして、成形及び焼成を行った。なお、表１の「Ｙｂ2Ｏ3／２５ｍｏｌ％Ｈｏ2Ｏ3」という表記は、１００ｍｏｌ％のＹｂ2Ｏ3に２５ｍｏｌ％のＨｏ2Ｏ3を加えた調合粉末であることを意味する。
　得られた各焼結体を各種評価用に加工し、以下の評価を行った。各評価結果を表１に示す。
（１）開気孔率・嵩密度
　純水を媒体としたアルキメデス法により測定した。試料形状は（２）と同形状に加工したものを用いた。
（２）強度
　３ｍｍ×４ｍｍ×４０ｍｍのＪＩＳＲ１６０１に準じた形状に加工して４点曲げ試験を行い、強度を算出した。
（３）結晶相評価
　焼結体を乳鉢で粉砕し、Ｘ線回折装置により結晶相を同定した。測定条件はＣｕＫα，４０ｋＶ，４０ｍＡ，２θ＝１０－７０°とし、封入管式Ｘ線回折装置（ブルカー・エイエックスエス製　Ｄ８　ＡＤＶＡＮＣＥ）を使用した。
（４）粒界相の評価
　複合材中の粒界相は、焼結体の結晶相と鏡面研磨した焼結体のＳＥＭ／ＥＤＳ観察から評価した。
（５）エッチングレート
　各焼結体表面を鏡面に研磨し、ＩＣＰプラズマ耐食試験装置を用いて下記条件の耐食試験を行った。表面粗さ計により測定した非暴露面と暴露面との段差を試験時間で割ることにより各材料のエッチングレートを算出した。
　ＩＣＰ：８００Ｗ、バイアス：４５０Ｗ、導入ガス：ＮＦ3／Ｏ2／Ａｒ＝７５／３５／１００ｓｃｃｍ　０．０５Ｔｏｒｒ、暴露時間：１０ｈ、試料温度：室温
（６）化学分析
　焼結体中の不純物金属量（Ｙｂ，Ｈｏ，Ｄｙ，Ｅｒ，Ｍｇ，Ｃａ，Ｓｒを除く金属元素）は誘導結合プラズマ（ＩＣＰ）発光スペクトル分析、並びに誘導結合プラズマ（ＩＣＰ）質量分析による。
（７）体積抵抗率測定
　ＪＩＳ　Ｃ２１４１に準じた方法により、大気中、室温にて測定した。試験片形状はφ５０ｍｍ×０．５～１ｍｍとし、主電極は直径２０ｍｍ、ガード電極は内径３０ｍｍ、外径４０ｍｍ、印加電極は直径４０ｍｍとなるよう各電極を銀で形成した。印加電圧は２ｋＶ／ｍｍとし、電圧印加後１分時の電流値を読み取り、その電流値から室温体積抵抗率を算出した。
［評価結果］
　表１に示すように、実施例１～４では、Ｙｂ2Ｏ3，Ｅｒ2Ｏ3，Ｈｏ2Ｏ3，Ｄｙ2Ｏ3をそれぞれ単味で用いて、焼成温度１５００℃で緻密化したところ、エッチレートが２２４～２５２ｎｍ／ｈであり、耐食性が高かった。また、実施例５では、Ｙｂ2Ｏ3を焼成温度１８００℃で緻密化したところ、エッチレートが２１０ｎｍ／ｈであり、実施例１と比べて耐食性が向上した。実施例５で耐食性が向上した理由は、より高温で焼成したことで粒径が粗大化して相対的に低耐食な粒界面積が減ることによって、全体の耐食性が向上したと推察している。実施例１～５の材料は体積抵抗率が１×１０15Ω・ｃｍ以上と高く、静電チャックやヒーター材として好適であった。実施例６では、Ｙｂ2Ｏ3とＨｏ2Ｏ3との混合粉末、実施例７では、Ｙｂ2Ｏ3とＥｒ2Ｏ3との混合粉末を用いて、焼成温度１５００℃で緻密化したところ、比較例１～６に比べて耐食性が優れ、実施例１（単味）に比べて強度が向上し体積抵抗率も高くなる傾向が見られた。これら実施例６，７では、ＸＲＤ解析より、Ｙｂ2Ｏ3のピークが低角度側にシフトしており、Ｈｏ2Ｏ3やＥｒ2Ｏ3のピークが検出されなかったことから、それぞれＹｂ2Ｏ3－Ｈｏ2Ｏ3固溶体（Ｙｂ2Ｏ3－Ｈｏ2Ｏ3ｓｓ）、Ｙｂ2Ｏ3－Ｅｒ2Ｏ3固溶体（Ｙｂ2Ｏ3－Ｅｒ2Ｏ3ｓｓ）を形成していると考えられる。
　一方、比較例１，２では、Ｙ2Ｏ3，Ａｌ2Ｏ3を１５００、１７００℃でそれぞれ焼成したところ、いずれも緻密化したが、耐食性は実施例１～４より劣っていた。比較例３では、Ｙｂ2Ｏ3を１３００℃で焼成したところ、開気孔率４．６％と気孔が多いため、耐食性が実施例１～４より劣っていた。比較例４，５では、Ｇｄ2Ｏ3，Ｅｕ2Ｏ3を１５００℃でそれぞれ焼成したところ、Ｇｄ2Ｏ3は開気孔率２．５％と気孔が多いため、耐食性が実施例１～４より劣っていた。Ｅｕ2Ｏ3は粒界が非常に低耐食であり、粒界を介して焼結体内部にフッ素が侵入し、腐食が進んだと考えられる。Ｙｂ2Ｏ3，Ｅｒ2Ｏ3，Ｈｏ2Ｏ3，Ｄｙ2Ｏ3は粒界がＥｕ2Ｏ3より高耐食であることが、希土類酸化物中で耐食性が高い要因の一つと推察している。比較例６では、Ｎｄ2Ｏ3を１５００℃で焼成したが、大気保管数日で焼結体が崩壊し、評価不能であった。
Figure JPOXMLDOC01-appb-T000001
［実施例８～１５］
　実施例８～１５では、希土類酸化物と２Ａ族元素（アルカリ土類金属）のフッ化物との調合粉末を用いて、半導体製造装置用耐食性部材を作製した。具体的には、まず、表２に示す希土類酸化物と２Ａ族元素のフッ化物とを秤量し、イソプロピルアルコールを溶媒とし、ナイロン製のポット、φ５ｍｍのアルミナ玉石を用いて４時間湿式混合した。混合後スラリーを取り出し、窒素気流中１１０℃で乾燥した。その後３０メッシュの篩に通し、調合粉末とした。続いて、その調合粉末を、２００ｋｇｆ／ｃｍ２の圧力で一軸加圧成形し、φ３５ｍｍ、厚さ１０ｍｍ程度の円盤状成形体を作製し、焼成用黒鉛モールドに収納した。次いで、ホットプレス法を用いて所定の焼成温度（表２）で焼成を行い、半導体製造装置用耐食性部材を得た。焼成時のプレス圧力は２００ｋｇｆ／ｃｍ２とし、焼成終了までＡｒ雰囲気とした。焼成温度（最高温度）での保持時間は４時間とした。なお、表２の「Ｙｂ2Ｏ3／１ｖｏｌ％ＭｇＦ2」という表記は、１００ｖｏｌ％のＹｂ2Ｏ3に１ｖｏｌ％のＭｇＦ2を加えた調合粉末であることを意味する。
　得られた各焼結体を各種評価用に加工し、先ほどと同様の評価を行った。各評価結果を表２に示す。
　実施例８，９では、Ｙｂ2Ｏ3に表２に示す所定量のＭｇＦ2を添加し、焼成温度１３００℃で緻密化したところ、焼結中にＭｇＦ2とＹｂ2Ｏ3が反応し、Ｙｂ2Ｏ3マトリックス中に粒状のＭｇＯ，ＹｂＯＦ相が形成された（図１参照）。実施例１と比べて焼成温度が低いにもかかわらず、フッ化物の添加によって緻密な焼結が可能となり、耐食性は実施例１と同等であった。また、粒界相が分散導入されたことにより、実施例１よりも高強度化した。
　実施例１０，１１では、Ｙｂ2Ｏ3に表２に示す所定量のＣａＦ2を添加し、焼成温度１２００～１３００℃で緻密化したところ、Ｙｂ2Ｏ3マトリックス中にＣａ，Ｆを主とする粒界相が形成された（図２参照）。実施例１と比べて焼成温度が低いにもかかわらず、フッ化物の添加によって緻密な焼結が可能となり、耐食性は実施例１とほぼ同等であった。また、粒界相が分散導入されたことにより、実施例１よりも高強度化した。
　実施例１２，１３では、Ｈｏ2Ｏ3に表２に示す所定量のＭｇＦ2を添加し、焼成温度１３００℃で緻密化したところ、実施例８，９と同様、焼結中にＭｇＦ2とＨｏ2Ｏ3が反応し、Ｈｏ2Ｏ3マトリックス中に粒状のＭｇＯ，ＨｏＯＦ相が形成された。実施例１２，１３では、実施例３と比べて焼成温度が低いにもかかわらず、フッ化物の添加によって緻密な焼結が可能となり、耐食性は実施例３と同等であった。また、粒界相が分散導入されたことにより、実施例３よりも高強度化した。
　実施例１４，１５では、Ｈｏ2Ｏ3に表２に示す所定量のＣａＦ2を添加し、焼成温度１３００℃で緻密化したところ、実施例１０，１１と同様、Ｙｂ2Ｏ3マトリックス中にＣａ，Ｆを主とする粒界相が形成された。実施例１４，１５では、実施例３と比べて焼成温度が低いにもかかわらず、フッ化物の添加によって緻密な焼結が可能となり、耐食性は実施例３とほぼ同等であった。また、粒界相が分散導入されたことにより、実施例３よりも高強度化した。
　実施例９～１１，１３～１５の材料は体積抵抗率が１×１０15Ω・ｃｍ以上と高く、静電チャックやヒーター材として好適であった。また、実施例８，１２についても同様の特性が見込まれる。
Figure JPOXMLDOC01-appb-T000002
［実施例１６～２０］
　実施例１６，１７では、実施例１で得られた焼結体（Ｙｂ2Ｏ3・１５００℃焼成品）を厚さ１ｍｍに加工し、それぞれ１１００℃で１０時間、１２００℃で１０時間、大気アニール処理を行った。また、実施例１８では、実施例５で得られた焼結体（Ｙｂ2Ｏ3・１８００℃焼成品）、実施例１９，２０では、実施例６，７で得られた焼結体（それぞれＹｂ2Ｏ3－Ｈｏ2Ｏ3固溶体、Ｙｂ2Ｏ3－Ｅｒ2Ｏ3固溶体）を厚さ１ｍｍに加工し、１２００℃で１０時間、大気アニール処理を行った。
　得られた各大気アニール処理品を各種評価用に加工し、先ほどと同様の評価（強度を除く）を行った。各評価結果を表３に示す。
　実施例１６～２０では、いずれも大気アニール処理を行う前の焼結体に比べて耐食性が向上すると共に体積抵抗率が高くなった。また、いずれも大気アニール処理を行う前の焼結体に比べて白みを帯びた色調に変化した。具体的には、Ｙｂ2Ｏ3焼成品は象牙色から白色に変化し（実施例１６～１８）、Ｙｂ2Ｏ3－Ｈｏ2Ｏ3固溶体は橙褐色から橙白色に変化し（実施例１９）、Ｙｂ2Ｏ3－Ｅｒ2Ｏ3固溶体は赤褐色から桃色に変化した（実施例２０）。焼成後に大気アニール処理を施すことにより焼結体に含まれる酸素欠損等が低減し、結晶性が向上することで耐食性、体積抵抗率が一段と向上したと推察される。
Figure JPOXMLDOC01-appb-T000003
　本出願は、2010年3月30日に出願された日本国特許出願第2010-079251号を優先権主張の基礎としており、引用によりその内容全てが本明細書に含まれる。
　本発明は、半導体製造におけるドライプロセスやプラズマコーティングなどを実施する際に利用される半導体製造装置に利用可能である。

Claims (6)

  1. 　開気孔率が０．３％以下であり、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の焼結体からなる、半導体製造装置用耐食性部材。
  2. 　前記焼結体には、Ｍｇ，Ｃａ及びＳｒからなる群より選ばれた少なくとも１種とＯ及びＦの少なくとも１種とを含む粒界相が分散している、
    　請求項１又は２に記載の半導体製造装置用耐食性部材。
  3. 　嵩密度が８．８～９．２ｇ／ｃｍ3であり、酸化イッテルビウムの焼結体からなる、請求項１又は２記載の半導体製造装置用耐食性部材。
  4. 　嵩密度が８．１～８．４ｇ／ｃｍ3であり、酸化ホルミウムの焼結体からなる、請求項１又は２記載の半導体製造装置用耐食性部材。
  5. 　酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも１種の酸化物原料を、（ａ）焼結助剤を用いることなく目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、所定の焼成温度でホットプレス焼成することにより、又は、（ｂ）Ｍｇ，Ｃａ及びＳｒからなる群より選ばれる少なくとも１種の元素のフッ化物である焼結助剤と共に目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、前記所定の焼成温度より低い温度でホットプレス焼成することにより、前記酸化物原料を焼結させて開気孔率が０．３％以下の焼結体を得る、半導体製造装置用耐食性部材の製法。
  6. 　前記酸化物原料を焼結させて開気孔率が０．３％以下の焼結体を得たあと、１０００℃以上で大気アニール処理を施す、
    　請求項５に記載の半導体製造装置用耐食性部材の製法。
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