JPWO2011122377A1 - 半導体製造装置用耐食性部材及びその製法 - Google Patents
半導体製造装置用耐食性部材及びその製法 Download PDFInfo
- Publication number
- JPWO2011122377A1 JPWO2011122377A1 JP2012508218A JP2012508218A JPWO2011122377A1 JP WO2011122377 A1 JPWO2011122377 A1 JP WO2011122377A1 JP 2012508218 A JP2012508218 A JP 2012508218A JP 2012508218 A JP2012508218 A JP 2012508218A JP WO2011122377 A1 JPWO2011122377 A1 JP WO2011122377A1
- Authority
- JP
- Japan
- Prior art keywords
- corrosion
- oxide
- semiconductor manufacturing
- resistant member
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005260 corrosion Methods 0.000 title claims abstract description 58
- 230000007797 corrosion Effects 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title abstract description 8
- 238000010304 firing Methods 0.000 claims abstract description 44
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 239000012298 atmosphere Substances 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims description 17
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 claims description 9
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 claims description 9
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 9
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims description 9
- 229940075624 ytterbium oxide Drugs 0.000 claims description 9
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims description 7
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 150000002222 fluorine compounds Chemical group 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000011156 evaluation Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 210000002381 plasma Anatomy 0.000 description 7
- 239000006104 solid solution Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004261 CaF 2 Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 210000000003 hoof Anatomy 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
- C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
- C04B2235/445—Fluoride containing anions, e.g. fluosilicate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/663—Oxidative annealing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/85—Intergranular or grain boundary phases
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/95—Products characterised by their size, e.g. microceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9669—Resistance against chemicals, e.g. against molten glass or molten salts
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
実施例1〜5,比較例1〜6では、希土類酸化物原料を単味で用いて、半導体製造装置用耐食性部材を作製した。具体的には、まず、表1に示す希土類酸化物原料粉末を、200kgf/cm2の圧力で一軸加圧成形し、φ50mm、厚さ10mm程度の円盤状成形体を作製し、焼成用黒鉛モールドに収納した。次いで、ホットプレス法を用いて所定の焼成温度(表1参照)で焼成を行い、半導体製造装置用耐食性部材を得た。焼成時のプレス圧力は200kgf/cm2とし、焼成終了までAr雰囲気とした。焼成温度(最高温度)での保持時間は4時間とした。
(1)開気孔率・嵩密度
純水を媒体としたアルキメデス法により測定した。試料形状は(2)と同形状に加工したものを用いた。
(2)強度
3mm×4mm×40mmのJISR1601に準じた形状に加工して4点曲げ試験を行い、強度を算出した。
(3)結晶相評価
焼結体を乳鉢で粉砕し、X線回折装置により結晶相を同定した。測定条件はCuKα,40kV,40mA,2θ=10−70°とし、封入管式X線回折装置(ブルカー・エイエックスエス製 D8 ADVANCE)を使用した。
(4)粒界相の評価
複合材中の粒界相は、焼結体の結晶相と鏡面研磨した焼結体のSEM/EDS観察から評価した。
(5)エッチングレート
各焼結体表面を鏡面に研磨し、ICPプラズマ耐食試験装置を用いて下記条件の耐食試験を行った。表面粗さ計により測定した非暴露面と暴露面との段差を試験時間で割ることにより各材料のエッチングレートを算出した。
ICP:800W、バイアス:450W、導入ガス:NF3/O2/Ar=75/35/100sccm 0.05Torr、暴露時間:10h、試料温度:室温
(6)化学分析
焼結体中の不純物金属量(Yb,Ho,Dy,Er,Mg,Ca,Srを除く金属元素)は誘導結合プラズマ(ICP)発光スペクトル分析、並びに誘導結合プラズマ(ICP)質量分析による。
(7)体積抵抗率測定
JIS C2141に準じた方法により、大気中、室温にて測定した。試験片形状はφ50mm×0.5〜1mmとし、主電極は直径20mm、ガード電極は内径30mm、外径40mm、印加電極は直径40mmとなるよう各電極を銀で形成した。印加電圧は2kV/mmとし、電圧印加後1分時の電流値を読み取り、その電流値から室温体積抵抗率を算出した。
表1に示すように、実施例1〜4では、Yb2O3,Er2O3,Ho2O3,Dy2O3をそれぞれ単味で用いて、焼成温度1500℃で緻密化したところ、エッチレートが224〜252nm/hであり、耐食性が高かった。また、実施例5では、Yb2O3を焼成温度1800℃で緻密化したところ、エッチレートが210nm/hであり、実施例1と比べて耐食性が向上した。実施例5で耐食性が向上した理由は、より高温で焼成したことで粒径が粗大化して相対的に低耐食な粒界面積が減ることによって、全体の耐食性が向上したと推察している。実施例1〜5の材料は体積抵抗率が1×1015Ω・cm以上と高く、静電チャックやヒーター材として好適であった。実施例6では、Yb2O3とHo2O3との混合粉末、実施例7では、Yb2O3とEr2O3との混合粉末を用いて、焼成温度1500℃で緻密化したところ、比較例1〜6に比べて耐食性が優れ、実施例1(単味)に比べて強度が向上し体積抵抗率も高くなる傾向が見られた。これら実施例6,7では、XRD解析より、Yb2O3のピークが低角度側にシフトしており、Ho2O3やEr2O3のピークが検出されなかったことから、それぞれYb2O3−Ho2O3固溶体(Yb2O3−Ho2O3ss)、Yb2O3−Er2O3固溶体(Yb2O3−Er2O3ss)を形成していると考えられる。
実施例8〜15では、希土類酸化物と2A族元素(アルカリ土類金属)のフッ化物との調合粉末を用いて、半導体製造装置用耐食性部材を作製した。具体的には、まず、表2に示す希土類酸化物と2A族元素のフッ化物とを秤量し、イソプロピルアルコールを溶媒とし、ナイロン製のポット、φ5mmのアルミナ玉石を用いて4時間湿式混合した。混合後スラリーを取り出し、窒素気流中110℃で乾燥した。その後30メッシュの篩に通し、調合粉末とした。続いて、その調合粉末を、200kgf/cm2の圧力で一軸加圧成形し、φ35mm、厚さ10mm程度の円盤状成形体を作製し、焼成用黒鉛モールドに収納した。次いで、ホットプレス法を用いて所定の焼成温度(表2)で焼成を行い、半導体製造装置用耐食性部材を得た。焼成時のプレス圧力は200kgf/cm2とし、焼成終了までAr雰囲気とした。焼成温度(最高温度)での保持時間は4時間とした。なお、表2の「Yb2O3/1vol%MgF2」という表記は、100vol%のYb2O3に1vol%のMgF2を加えた調合粉末であることを意味する。
実施例16,17では、実施例1で得られた焼結体(Yb2O3・1500℃焼成品)を厚さ1mmに加工し、それぞれ1100℃で10時間、1200℃で10時間、大気アニール処理を行った。また、実施例18では、実施例5で得られた焼結体(Yb2O3・1800℃焼成品)、実施例19,20では、実施例6,7で得られた焼結体(それぞれYb2O3−Ho2O3固溶体、Yb2O3−Er2O3固溶体)を厚さ1mmに加工し、1200℃で10時間、大気アニール処理を行った。
Claims (6)
- 開気孔率が0.3%以下であり、酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも1種の焼結体からなる、半導体製造装置用耐食性部材。
- 前記焼結体には、Mg,Ca及びSrからなる群より選ばれた少なくとも1種とO及びFの少なくとも1種とを含む粒界相が分散している、
請求項1又は2に記載の半導体製造装置用耐食性部材。 - 嵩密度が8.8〜9.2g/cm3であり、酸化イッテルビウムの焼結体からなる、請求項1又は2記載の半導体製造装置用耐食性部材。
- 嵩密度が8.1〜8.4g/cm3であり、酸化ホルミウムの焼結体からなる、請求項1又は2記載の半導体製造装置用耐食性部材。
- 酸化イッテルビウム、酸化ホルミウム、酸化ジスプロシウム及び酸化エルビウムからなる群より選ばれた少なくとも1種の酸化物原料を、(a)焼結助剤を用いることなく目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、所定の焼成温度でホットプレス焼成することにより、又は、(b)Mg,Ca及びSrからなる群より選ばれる少なくとも1種の元素のフッ化物である焼結助剤と共に目的とする半導体製造装置用耐食性部材の形状に成形したあと、不活性雰囲気下、前記所定の焼成温度より低い温度でホットプレス焼成することにより、前記酸化物原料を焼結させて開気孔率が0.3%以下の焼結体を得る、半導体製造装置用耐食性部材の製法。
- 前記酸化物原料を焼結させて開気孔率が0.3%以下の焼結体を得たあと、1000℃以上で大気アニール処理を施す、
請求項5に記載の半導体製造装置用耐食性部材の製法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012508218A JP5819816B2 (ja) | 2010-03-30 | 2011-03-18 | 半導体製造装置用耐食性部材及びその製法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010079251 | 2010-03-30 | ||
JP2010079251 | 2010-03-30 | ||
JP2012508218A JP5819816B2 (ja) | 2010-03-30 | 2011-03-18 | 半導体製造装置用耐食性部材及びその製法 |
PCT/JP2011/056624 WO2011122377A1 (ja) | 2010-03-30 | 2011-03-18 | 半導体製造装置用耐食性部材及びその製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011122377A1 true JPWO2011122377A1 (ja) | 2013-07-08 |
JP5819816B2 JP5819816B2 (ja) | 2015-11-24 |
Family
ID=44712088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012508218A Active JP5819816B2 (ja) | 2010-03-30 | 2011-03-18 | 半導体製造装置用耐食性部材及びその製法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8679998B2 (ja) |
JP (1) | JP5819816B2 (ja) |
KR (1) | KR101400598B1 (ja) |
CN (2) | CN102822115B (ja) |
TW (1) | TWI540635B (ja) |
WO (1) | WO2011122377A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US9440886B2 (en) * | 2013-11-12 | 2016-09-13 | Applied Materials, Inc. | Rare-earth oxide based monolithic chamber material |
US9687953B2 (en) | 2014-06-27 | 2017-06-27 | Applied Materials, Inc. | Chamber components with polished internal apertures |
US10714224B2 (en) | 2015-01-29 | 2020-07-14 | Framatome Gmbh | Method of preparing of irradiation targets for radioisotope production and irradiation target |
WO2016120120A1 (en) | 2015-01-29 | 2016-08-04 | Areva Gmbh | Irradiation target for radioisotope production, method for preparing and use of the irradiation target |
US10424417B2 (en) | 2015-01-29 | 2019-09-24 | Framatome Gmbh | Method of preparing irradiation targets for radioisotope production and irradiation target |
WO2017087474A1 (en) | 2015-11-16 | 2017-05-26 | Coorstek, Inc. | Corrosion-resistant components and methods of making |
EP3560906B1 (en) | 2016-11-16 | 2024-02-21 | Coorstek Inc. | Corrosion-resistant components and methods of making |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
CN111302800B (zh) * | 2020-03-11 | 2022-02-01 | 宁波大学 | 一种镍离子均匀掺杂技术制备高费尔德常数及高光学质量的氧化钬磁光透明陶瓷 |
KR102597644B1 (ko) | 2020-11-06 | 2023-11-03 | (주)기연 | 불화 마그네슘이 첨가된 이트리아 세라믹스 및 그 제조방법 |
KR102608236B1 (ko) | 2020-11-16 | 2023-12-01 | ㈜에이치엠테크 | 저온소결 이트리아 세라믹스 및 그 제조방법 |
CN113321509A (zh) * | 2021-06-25 | 2021-08-31 | 中国科学院上海光学精密机械研究所 | 一种用于氟化物玻璃活性气氛处理的耐腐蚀通气管 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0493802B1 (en) * | 1990-12-27 | 1996-08-28 | Kyocera Corporation | Silicon nitride-silicon carbide composite sintered material |
US5506185A (en) * | 1994-06-24 | 1996-04-09 | Lockheed Idaho Technologies Company | Ceramic oxyanion emitter |
JP2983174B2 (ja) * | 1996-04-26 | 1999-11-29 | 新日本チューブ工業株式会社 | チューブコンテナー |
JPH104083A (ja) * | 1996-06-17 | 1998-01-06 | Kyocera Corp | 半導体製造用耐食性部材 |
JP3619330B2 (ja) * | 1996-07-31 | 2005-02-09 | 京セラ株式会社 | プラズマプロセス装置用部材 |
JP3261044B2 (ja) * | 1996-07-31 | 2002-02-25 | 京セラ株式会社 | プラズマプロセス装置用部材 |
JPH1053462A (ja) * | 1996-08-02 | 1998-02-24 | Tosoh Corp | SrM2O4型固体電解質及びその製造方法 |
US6447937B1 (en) * | 1997-02-26 | 2002-09-10 | Kyocera Corporation | Ceramic materials resistant to halogen plasma and components using the same |
JP2002057207A (ja) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
US6888236B2 (en) * | 2000-03-07 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic substrate for manufacture/inspection of semiconductor |
JP2002362966A (ja) * | 2001-06-08 | 2002-12-18 | Nihon Ceratec Co Ltd | セラミックス材料 |
US6825144B2 (en) * | 2001-07-05 | 2004-11-30 | Konoshima Chemical Co., Ltd. | Translucent rare earth oxide sintered article and method for production thereof |
JP2002222803A (ja) | 2001-12-03 | 2002-08-09 | Kyocera Corp | 半導体製造用耐食性部材 |
KR101196297B1 (ko) | 2003-07-29 | 2012-11-06 | 쿄세라 코포레이션 | Y₂o₃질 소결체, 내식성 부재 및 그 제조방법, 및반도체?액정제조장치용 부재 |
JP4558431B2 (ja) * | 2004-09-30 | 2010-10-06 | 株式会社日立ハイテクノロジーズ | 半導体製造装置のクリーニング方法 |
JP4894379B2 (ja) * | 2005-09-26 | 2012-03-14 | Toto株式会社 | 希土類焼結体およびその製造方法 |
JP5324029B2 (ja) * | 2006-03-20 | 2013-10-23 | 東京エレクトロン株式会社 | 半導体加工装置用セラミック被覆部材 |
US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
CN101665352A (zh) * | 2008-09-01 | 2010-03-10 | 日本碍子株式会社 | 氧化铝烧结体及其制造方法 |
CN101514100B (zh) * | 2009-03-10 | 2013-09-18 | 中国科学院上海硅酸盐研究所 | 一种石榴石结构的闪烁透明陶瓷体系及其制备方法 |
-
2011
- 2011-03-18 KR KR1020127024757A patent/KR101400598B1/ko active IP Right Grant
- 2011-03-18 CN CN201180015793.9A patent/CN102822115B/zh active Active
- 2011-03-18 JP JP2012508218A patent/JP5819816B2/ja active Active
- 2011-03-18 WO PCT/JP2011/056624 patent/WO2011122377A1/ja active Application Filing
- 2011-03-18 CN CN201610821505.3A patent/CN107098686B/zh active Active
- 2011-03-28 TW TW100110600A patent/TWI540635B/zh active
-
2012
- 2012-09-21 US US13/624,087 patent/US8679998B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN107098686B (zh) | 2020-08-11 |
US20130023401A1 (en) | 2013-01-24 |
KR20120134128A (ko) | 2012-12-11 |
JP5819816B2 (ja) | 2015-11-24 |
TW201145386A (en) | 2011-12-16 |
CN107098686A (zh) | 2017-08-29 |
KR101400598B1 (ko) | 2014-05-27 |
CN102822115B (zh) | 2017-06-27 |
CN102822115A (zh) | 2012-12-12 |
WO2011122377A1 (ja) | 2011-10-06 |
TWI540635B (zh) | 2016-07-01 |
US8679998B2 (en) | 2014-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5819816B2 (ja) | 半導体製造装置用耐食性部材及びその製法 | |
JP5307671B2 (ja) | 窒化アルミニウム基複合材料、その製造方法及び半導体製造装置用部材 | |
JP4987238B2 (ja) | 窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法 | |
JP5203313B2 (ja) | 酸化アルミニウム焼結体及びその製法 | |
JP2002356387A (ja) | 耐プラズマ性部材 | |
JP2011168472A (ja) | アルミナ焼結体、その製法及び半導体製造装置部材 | |
JP5406565B2 (ja) | 酸化アルミニウム焼結体、その製法及び半導体製造装置部材 | |
JP5577287B2 (ja) | フッ化マグネシウム焼結体、その製法及び半導体製造装置用部材 | |
JP2002249379A (ja) | 窒化アルミニウム焼結体及び半導体製造装置用部材 | |
JP5767209B2 (ja) | 半導体製造装置用耐食性部材及びその製法 | |
JP4429742B2 (ja) | 焼結体及びその製造方法 | |
JP4480951B2 (ja) | 耐食性部材 | |
WO2013114654A1 (ja) | 静電チャック部材 | |
JP3716386B2 (ja) | 耐プラズマ性アルミナセラミックスおよびその製造方法 | |
JP6614842B2 (ja) | セラミックス材料、その製法及び半導体製造装置用部材 | |
JP2003146760A (ja) | 窒化アルミニウム焼結体とその製造方法 | |
JP2001220243A (ja) | 耐食性複合部材およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150512 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150529 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150929 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151001 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5819816 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |