WO2011092406A1 - Magnetometre integre et son procede de fabrication - Google Patents
Magnetometre integre et son procede de fabrication Download PDFInfo
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- WO2011092406A1 WO2011092406A1 PCT/FR2011/000058 FR2011000058W WO2011092406A1 WO 2011092406 A1 WO2011092406 A1 WO 2011092406A1 FR 2011000058 W FR2011000058 W FR 2011000058W WO 2011092406 A1 WO2011092406 A1 WO 2011092406A1
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- Prior art keywords
- sensors
- substrate
- magnetometer
- magnetometer according
- deposited
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000005291 magnetic effect Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000035945 sensitivity Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- 238000002663 nebulization Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013256 coordination polymer Substances 0.000 claims description 2
- 238000009834 vaporization Methods 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 2
- 230000005415 magnetization Effects 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- -1 for example Co Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0029—Treating the measured signals, e.g. removing offset or noise
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
Definitions
- the invention relates to an integrated magnetometer with two or three axes, as well as to its manufacturing method.
- magnetoresistive sensors consist of a stack of thin layers deposited on a planar substrate, for example made of silicon.
- a giant magnetoresistance magnetoresistive sensor of the English language “Giant MagnetoResistance” consists of two magnetic layers, CM1 and CM2, for example cobalt, separated by a CMET metal layer, for example copper, whose thickness is of the order of one nanometer.
- the lower layer CM2 is called “hard” because its magnetization (magnetic moment) M 2 is rendered insensitive to any external magnetic field (as long as it is not too intense), while the upper layer CM1 is said to be soft because its magnetic moment Mi is likely to be modified by an external magnetic field of moderate intensity.
- the magnetization of the "hard” layer is obtained by depositing the latter on an antiferromagnetic layer, called the blocking layer CB.
- the magnetization of the "soft” layer is obtained by annealing above the Curie temperature, followed by by cooling in the presence of a magnetic field having a suitable direction.
- the electrical resistance of this structure depends on the cosine of the angle ⁇ between Mi and M 2 .
- M- ⁇ and M 2 are generally chosen perpendicular to each other in the absence of an external magnetic field.
- a second type of sensor is also composed of two layers EF1, EF2 of a conductive ferromagnetic material, for example Co, Fe or CoFe, which can be identical or different (“electrodes") separated from a thin layer C1 (thickness typically between 0.8 and 5 nm) of insulation such as alumina - Al 2 0 3 - or magnesium oxide - MgO.
- a conductive ferromagnetic material for example Co, Fe or CoFe
- C1 thin layer
- C1 thin layer of insulation
- the magnetization of the lower electrode EF2 is fixed, while that of the upper electrode can be modified by an external magnetic field.
- the probability that an electron crosses the insulating barrier, and therefore the resistance of the tunnel junction JT depends on the cosine of the angle ⁇ between the magnetizations between the two magnetic layers.
- a TMR sensor is sensitive only to the component of the field oriented in the direction of the magnetization of its "hard" electrode.
- a TMR sensor In a TMR sensor, the electric current flows perpendicular to the plane of the layers. Consequently, such a sensor is in the form of two crossed strips constituted by the ferromagnetic electrodes EF1, EF2, separated by the layer C1, as illustrated in FIG.
- a first possibility for eliminating this shift illustrated in FIG. 3A, consists in integrating on the same substrate four identical sensors R 1 f R 1 ', R 2 , R 2 ', with axes of sensitivity parallel to one another. These four sensors are connected so as to form a Wheatstone bridge, with a first arm formed by the sensors Ri and R 2 and a second arm formed by the sensors Ri 'and R 2 '.
- the sensors R 2 and R ' 2 belonging to different arms and occupying opposite positions in the Wheatstone bridge (that is to say not being connected directly to one another) are covered by a BM alloy magnetic shielding soft ferromagnetic. Thus, only the resistances of Ri and Ri 'depend on the external magnetic field.
- the potential difference between the points A and B is proportional to cos (0), and therefore to the component of the external magnetic field that can be measured.
- the four sensors are identical: it suffices that the resistances of Ri and Ri 'are equal to each other, as well as those of R 2 and R 2 ', and that the offset of the four sensors presents the same dependence of the temperature.
- a second solution for eliminating the offset consists in making a differential resistance measurement between two identical sensors R, R 'and having a response of sign opposite to the same magnetic field component (arrows A R , AR ').
- Two sensors of this type must have opposite magnetizations of their "hard” layers. This can be achieved in several ways, in particular:
- an artificial antiferromagnetic system or “AAF” of the English “Artificial Antiferromagnet” which is in turn deposited on the blocking layer.
- AAF artificial antiferromagnetic system
- the magnetizations of the two layers are constantly in an antiparallel alignment: thus, the "hard” layer of the sensor is polarized in a opposite direction to the magnetic moment of the blocking layer.
- Figure 4 shows a sectional view of a sensor having an AAF.
- the use of an AAF structure in a GMR sensor is delicate, since said structure increases the conductivity of the sensor and thus decreases its sensitivity. This problem does not arise in the case of a TMR sensor.
- the prior art does not make it possible to produce an integrated magnetometer with three axes: at the most, the magnetoresistive sensors deposited on a planar substrate make it possible to measure the two components of the projection of an external magnetic field on the plane of the substrate.
- a three-axis magnetometer is generally made in hybrid form, using at least two non-coplanar substrates. This results in expensive devices to achieve, bulky and delicate, and especially with limited accuracy by systematic errors related to the assembly of the magnetometer.
- the invention aims to overcome the aforementioned drawbacks of the prior art.
- An object of the invention making it possible to achieve this goal is an integrated magnetometer according to claim 1, comprising a plurality of multilayer magnetoresistive sensors deposited on a so-called upper surface of a substantially planar substrate, characterized in that:
- said upper surface of the substrate has at least one cavity or protrusion provided with a plurality of inclined faces; and in that :
- magnetoresistive sensors are deposited on four said inclined faces, having different orientations and opposite two by two, each sensor being sensitive to a component of an external magnetic field parallel to the face on which it is deposited.
- Another object of the invention is a method of manufacturing a magnetometer as described above comprising:
- Said first step can be implemented by anisotropic etching of said substrate, which must then be monocrystalline.
- Said second step may comprise at least one operation of depositing a homogeneous layer of resin on the surface of said substrate, said or each deposition operation being carried out by nebulization or vaporization of said resin.
- FIGS. 5A and 5B respectively, an elevation view in section of a truncated pyramid-shaped protrusion obtained for anisotropic etching of a monocrystalline silicon substrate, on one side of which a magnetoresistive sensor of the type has been deposited.
- GMR GMR
- Figure 6 is a sectional view of a one-axis magnetometer based on GMR type sensors
- FIG. 7 a plan view of a two-axis magnetometer according to one embodiment of the invention, also based on GMR type sensors;
- FIG. 8 a plan view of a three-axis magnetometer according to another embodiment of the invention, also based on GMR type sensors;
- FIG. 9 a plan view of a three-axis magnetometer according to yet another embodiment of the invention, based on TMR type sensors;
- Figure 10 an elevational view of a magnetometer according to the invention cointegrated with an accelerometer
- Figure 11 a simplified illustration of the different steps of manufacturing a magnetometer according to the method of the invention
- Figure 12 is a plan view of a magnetometer according to a variant of the invention, including flux concentrators.
- FIG. 13A and 13B a plan view of a magnetometer constituted by a series connection of several magnetometers of the type shown in Figure 7.
- the production of protuberances of this type - as well as cavities also in the form of a truncated pyramid - has been described in the article by Chi-Rong Yang et al. "Study on anisotropic silicon etching characteristics in various surfactant-added teramethylammonium hydroxide water solutions". J. Micromech. Microeng. 5, 2028 (2005).
- Mi represents the magnetization moment of the (soft) sensitive layer of Ri, M 2 that of the hard layer, A R the detection axis of the sensor, parallel to M 2 .
- the surface of the substrate S is parallel to the xy plane, and perpendicular to the z axis.
- the components along the x, y and z axes, respectively, of an external magnetic field to be measured are called B x , B y and B z .
- a known current travels the sensor Ri in a direction parallel to the y axis; the voltage V- ⁇ measured at its terminals makes it possible to determine its resistance, which is a function of B x and B z , but not of B y .
- its output signal is given by:
- V ⁇ V 0 + S [ B z Sin ⁇ + B x C0S ⁇ ]
- S the sensitivity of the sensor
- Vo its offset, that is, its output voltage in the absence of a magnetic field.
- the device of FIG. 5 is of limited interest because, because of the offset, it is difficult to associate a voltage measurement with the value of a component of the magnetic field.
- FIG. 6 shows a device in which two identical sensors R 1 and R 3 are deposited on two opposite faces of the pyramid P.
- the output signals V 1 and V 2 make it possible to determine B x , while avoiding the offset V 0 :
- the measurement of the component B z depends on the offset
- FIG. 7 shows a device according to one embodiment of the invention, in which four identical sensors Ri, R 2 , R 3 and R 4 are deposited on the four faces of pyramid P, with their sensitivity axes ARI, AR 2 , A R3 and A R4 oriented towards the tip.
- This magnetometer makes it possible to determine B x and B y , thus achieving a "compass":
- FIG. 8 shows a device according to another embodiment of the invention, which is different from the first embodiment in that the sensors deposited on the two faces of opposite orientation are split into two identical elementary sensors: Ri, Ri ', and R 3 , R 3 '.
- the four elementary sensors are connected in a Wheatstone bridge, as shown in the figure.
- the voltage V A B is directly proportional to B X , which simplifies the measurement processing electronics and makes it possible to increase their dynamics, since it is no longer necessary to amplify, and possibly convert to digital format, the component V 0 of the measured voltage signals.
- a bridge structure may also be formed on the other two faces of the protuberance P, giving access to a signal indicative of the component B Y of the magnetic field.
- FIG. 9 shows a device according to yet another embodiment of the invention, which differs from that of FIG. 7 only in that the sensors R 2 and R 4 comprise an AAF structure which reverses their sensitivity (the arrows A R2 and A R4 are oriented opposite the tip of the pyramid P).
- the three components of the magnetic field are given by:
- Each flux concentrator is constituted by two planar pieces of soft magnetic material with high permeability (for example: permalloy), having a trapezoidal shape and facing each other by their smaller base, their height being parallel to the sensitivity axis of the sensor. magnetoresistive (and therefore being oriented towards the base of the pyramid). These two pieces concentrate the flux lines of the magnetic field in the region between their smaller bases, where the sensor is located. This variant is illustrated in FIG.
- FIGS. 13A and 13B illustrate a "complex" magnetometer constituted by a plurality (four, in this case) of elementary magnetometers MM1 - MM4 as described above, in which the corresponding sensors - that is to say having axes of sensitivity parallel to each other - are connected in series. This makes it possible to increase the signal-to-noise ratio; when TMR sensors are used, this also reduces the risk of tunnel junction breakdown.
- Elementary magnetometers must be placed in close proximity to one another (a few millimeters or less, preferably 1 mm or less) to be subjected to the same magnetic field. For the sake of readability, FIG.
- FIG. 13A shows a simplified case, where only one sensor of each elementary magnetometer is connected in series with the corresponding sensors of the other magnetometers;
- Figure 13B shows the case where the four branches of each elementary magnetometer participate in a series connection.
- the number of elementary magnetometers may be different from four; these elementary magnetometers need not be aligned; they can also, for example, be arranged in a matrix.
- the invention has been described with reference to embodiments based on the use of sensors that are identical to each other (except, as the case may be, as regards the sign of their sensitivity S). This is not an essential limitation, and magnetometers formed by a plurality of different magnetoresistive sensors are not excluded from the scope of the invention. However, the use of identical sensors is preferred because it makes it possible to minimize systematic errors.
- the monolithic co-integration of the different sensors is advantageous, among other things, in that it makes it possible precisely to ensure the substantial identity of their characteristics.
- the sensors will preferably be deposited in the immediate vicinity of each other; typically, all the sensors of the same magnetometer according to the invention will be included in a radius of 1 mm or less, preferably 100 ⁇ or less and more preferably 50 ⁇ m or less.
- FIG. 10 shows an elevational view of a magnetometer MM of the type of FIG. 9, cointegrated with a microelecromechanical AM accelerometer with built-in lever, sensitive along the z axis.
- the accelerometer measures the component of the gravitational acceleration g along the z axis, which makes it possible to determine the inclination of this axis relative to the vertical. It is thus possible to determine the components of the magnetic field B parallel and perpendicular to the local vertical.
- accelerometers of different types, one or three axes can be used.
- the magnetometer of the invention is generally connected, by means of conductive lines deposited on the substrate S by conventional techniques of microelectronics, to an electronic processing circuit.
- This circuit digital, analog or hybrid digital / analog, makes it possible to perform the resistance measurements and to process the results of these measurements to determine the desired components of the magnetic field.
- this circuit can be co-integrated on the substrate S.
- FIGS. 11A-11D very schematically illustrate the various steps of a method of manufacturing a magnetometer according to the invention.
- the first step is the anisotropic chemical etching of the surface 100 of the silicon, by etching, revealing the planes 1 1 more dense and inclined 54.7 °.
- FIG. 11A shows the substrate S coated with a layer of resin RL, in which an opening has been disengaged allowing chemical etching of the surface of the substrate.
- FIG. 11B shows the truncated pyramidal cavity CP obtained at the end of the anisotropic etching operation, after removal of the resin. Alternatively, it is possible to obtain protuberances of the same shape by removing the resin everywhere except on a square or rectangular region. This step is well known in the art, and described in particular by the aforementioned article by Chi-Rong Yang et al.
- the second step is the realization of magnetoresistive sensors and their electrical connections, by conventional deposition and lithography operations.
- a difficulty is represented by the fact that the lithography operations require to deposit layers homogeneous resin on the inclined faces of the cavities or protuberances.
- the conventional spinning technique (“spincoating") is not suitable because it would leave the slopes bare.
- spincoating there are techniques of deposition by nebulization (“spraycoating”) or resin evaporation, which make it possible to produce homogeneous layers of resin even on inclined surfaces. See for example the following publications:
- Figure 11C shows a resin layer RL 'deposited by nebulization.
- Annealing in the presence of an external magnetic field B R are performed after or during the manufacture of the sensors to polarize the blocking layers and the "soft" layers ( Figure 1 D).
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012550490A JP2013518273A (ja) | 2010-01-29 | 2011-01-28 | 集積磁力計およびその製造プロセス |
CN2011800075712A CN102859382A (zh) | 2010-01-29 | 2011-01-28 | 集成式磁力计及其制造方法 |
KR1020127022485A KR20120139712A (ko) | 2010-01-29 | 2011-01-28 | 통합 자력계 및 그 제조방법 |
US13/575,221 US9557392B2 (en) | 2010-01-29 | 2011-01-28 | Integrated magnetometer and its manufacturing process |
EP11708900.3A EP2529243B1 (fr) | 2010-01-29 | 2011-01-28 | Magnetometre integre et son procede de fabrication |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1000369 | 2010-01-29 | ||
FR1000369A FR2955942B1 (fr) | 2010-01-29 | 2010-01-29 | Magnetometre integre et son procede de fabrication |
Publications (1)
Publication Number | Publication Date |
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WO2011092406A1 true WO2011092406A1 (fr) | 2011-08-04 |
Family
ID=42663615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2011/000058 WO2011092406A1 (fr) | 2010-01-29 | 2011-01-28 | Magnetometre integre et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US9557392B2 (fr) |
EP (1) | EP2529243B1 (fr) |
JP (1) | JP2013518273A (fr) |
KR (1) | KR20120139712A (fr) |
CN (1) | CN102859382A (fr) |
FR (1) | FR2955942B1 (fr) |
WO (1) | WO2011092406A1 (fr) |
Cited By (4)
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CN103576101A (zh) * | 2012-07-31 | 2014-02-12 | 北京嘉岳同乐极电子有限公司 | 一种多通道集成式磁传感器 |
WO2014137433A1 (fr) | 2013-03-08 | 2014-09-12 | Deere & Company | Détection de courant électrique dans un conducteur |
JP2014531571A (ja) * | 2011-08-30 | 2014-11-27 | ジャンス マルチディメンション テクノロジー シーオー., エルティーディー | Mtj三軸磁場センサおよびそのパッケージ方法 |
CN104755948A (zh) * | 2012-10-12 | 2015-07-01 | 美新公司 | 单晶三轴磁场传感器 |
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EP2965105A4 (fr) * | 2013-03-08 | 2016-11-23 | Deere & Co | Détection de courant électrique dans un conducteur |
Also Published As
Publication number | Publication date |
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EP2529243B1 (fr) | 2014-03-19 |
US20130134970A1 (en) | 2013-05-30 |
JP2013518273A (ja) | 2013-05-20 |
FR2955942B1 (fr) | 2013-01-04 |
EP2529243A1 (fr) | 2012-12-05 |
US9557392B2 (en) | 2017-01-31 |
FR2955942A1 (fr) | 2011-08-05 |
CN102859382A (zh) | 2013-01-02 |
KR20120139712A (ko) | 2012-12-27 |
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