WO2011089894A1 - 感光性重合体組成物、パターンの製造方法及び電子部品 - Google Patents
感光性重合体組成物、パターンの製造方法及び電子部品 Download PDFInfo
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- WO2011089894A1 WO2011089894A1 PCT/JP2011/000250 JP2011000250W WO2011089894A1 WO 2011089894 A1 WO2011089894 A1 WO 2011089894A1 JP 2011000250 W JP2011000250 W JP 2011000250W WO 2011089894 A1 WO2011089894 A1 WO 2011089894A1
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- 0 CC(*=N)(/C=C1)/C=C/C=C/*1C(OC=O)=C Chemical compound CC(*=N)(/C=C1)/C=C/C=C/*1C(OC=O)=C 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0091—Complexes with metal-heteroatom-bonds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/06—Polyamides derived from polyamines and polycarboxylic acids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Definitions
- the present invention relates to a photosensitive polymer composition, a pattern production method, and an electronic component. More specifically, the present invention relates to a positive photosensitive polymer composition excellent in sensitivity and adhesion to a substrate, a method for producing a patterned cured film using the polymer composition, and an electronic component.
- a polyimide resin having both excellent heat resistance, electrical characteristics, mechanical characteristics, and the like has been used for the surface protective film and the interlayer insulating film of the semiconductor element.
- This polyimide resin film is generally applied by spin coating or the like with a polyimide precursor (polyamic acid) solution (so-called varnish) obtained by reacting tetracarboxylic dianhydride and diamine in a polar solvent at normal temperature and pressure. Then, the film is formed into a thin film and formed by dehydration ring closure (curing) by heating (for example, see Non-Patent Document 1).
- an organic solvent such as N-methylpyrrolidone has been used for developing the photosensitive polyimide, but recently, a positive photosensitive resin that can be developed with an alkaline aqueous solution has been proposed from the viewpoint of environment and cost. ing.
- a method for obtaining such an alkali-developable positive photosensitive resin a method of introducing an o-nitrobenzyl group into a polyimide precursor via an ester bond (for example, see Non-Patent Document 2), soluble hydroxylimide or There is a method of mixing a naphthoquinone diazide compound with a polybenzoxazole precursor (for example, see Patent Documents 4 and 5).
- a resin obtained by such a method can be expected to have a low dielectric constant, and photosensitive polybenzoxazole is attracting attention together with photosensitive polyimide from such a viewpoint.
- photosensitive resins have been applied to various wiring layers in accordance with changes in the structure of devices. Here, for example, adhesion to aluminum wiring, electroless plating solution, etc. Resistance to plating solution is being demanded.
- Patent Documents 6 to 9 describe the use of an aluminum complex together with an active silicon compound to promote polymer cyclization.
- the techniques described in these patent documents do not sufficiently improve the adhesion to the aluminum wiring and the resistance to plating solution such as electroless plating solution.
- An object of the present invention is to provide a photosensitive polymer composition having good sensitivity and capable of forming a pattern excellent in adhesion, particularly plating solution resistance.
- the present inventors have found that the adhesion and sensitivity of a substrate can be improved by using two or more types of aluminum complex compounds in combination with a polymer capable of alkali development.
- a photosensitive polymer composition comprising the following components (a), (b), (c1) and (c2).
- A) Polymer soluble in alkaline aqueous solution (b) Compound generating acid by light (c1) Aluminum chelate complex having three bidentate ligands of the same kind (c2) Two or three kinds of bidentate coordination 1.
- Aluminum chelate complex having three children 2.
- the component (c1) is an aluminum chelate complex represented by the general formula (II ′), and the component (c2) is an aluminum chelate complex represented by the general formula (II) or (II ′′), 2.
- the photosensitive polymer composition according to 2. In the formula, R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are each independently a hydrogen atom or a monovalent organic group. However, in the formula (II ′), all three combinations of R 1 and R 2 are the same. In the formula (II), the combination of R 1 and R 2 , the combination of R 3 and R 4 , and the combination of R 5 and R 6 are different from each other.
- the component (d) is represented by the compound represented by the following formula (III), the compound represented by the following formula (IV), the compound represented by the following formula (V), and the following formula (V).
- R 7 are each independently a hydrogen atom or a monovalent organic group
- a plurality of R 8 are each independently a hydrogen atom, a monovalent organic group, or a carbon having R 8 bonded to each other.
- X is a single bond or a monovalent to tetravalent organic group
- R 11 is a hydrogen atom or a monovalent organic group
- R 12 is a monovalent organic group
- o is 1 to 4
- A is an integer of 1 to 4
- b is an integer of 0 to 3.
- R 1 represents a monovalent organic group
- A represents a divalent organic group selected from a hydrocarbon group, an organic group containing a carbonyl group, an organic group containing an ester bond, and an organic group containing an ether bond.
- n is an integer of 0 to 5
- m is an integer of 1 to 6.
- R 1 and A may be the same or different. 6).
- 6. The photosensitive polymer composition according to 5, wherein the component (d) is a compound represented by the formula (III). 7).
- E The photosensitive polymer composition according to any one of 1 to 6, further comprising an alkoxysilane adhesive. 8).
- A 100 parts by weight of component (b) 5 to 100 parts by weight of component, (c1) and (c2) 0.1 to 50 parts of component, (d) 1 to 30 parts by weight of component, (e) component 8.
- a method for producing a pattern comprising a step of applying the photosensitive polymer composition according to any one of 1 to 8 on a supporting substrate and drying, a step of exposing, a step of developing, and a step of heat treatment. 10.
- 10. The method for producing a pattern according to 9, wherein a light source used in the exposing step is i-line.
- a cured product obtained by curing the photosensitive polymer composition according to any one of 11.1 to 8.
- An electronic component comprising the cured product according to 12.11 as a surface protective film or an interlayer insulating film.
- the present invention it is possible to provide a photosensitive polymer composition having good sensitivity and capable of forming a pattern having excellent adhesion, particularly plating solution resistance.
- the photosensitive resin composition according to the present invention includes (a) a polymer soluble in an alkaline aqueous solution, (b) a compound that generates an acid by light, (c1) an aluminum chelate complex having three bidentate ligands of the same kind, ( c2) Contains an aluminum chelate complex having three 2 or 3 bidentate ligands.
- the component (c1) and the component (c2) may be collectively referred to as the component (c).
- the polymer soluble in the alkaline aqueous solution as component (a) is preferably a polyimide-based polymer or a polyoxazole-based polymer, and specifically preferred are: It is at least one polymer compound selected from polyimide, polyamideimide, polyoxazole, polyamide, and precursors thereof (for example, polyamic acid, polyamic acid ester, polyhydroxyamide, etc.).
- the component (a) may be a copolymer having two or more main chain skeletons described above, or a mixture of two or more of the above polymers.
- the polymer (a) soluble in alkaline aqueous solution is preferably a polymer having a plurality of phenolic hydroxyl groups, a plurality of carboxy groups, or both groups.
- the component (a) is more preferably an aqueous alkaline solution-soluble polyamide having a structural unit represented by the following formula (I) that functions as a precursor of polybenzoxazole and has good photosensitivity and film properties.
- formula (I) that functions as a precursor of polybenzoxazole and has good photosensitivity and film properties.
- U is a tetravalent organic group
- V is a divalent organic group.
- the amide unit containing a hydroxy group represented by the formula (I) is finally converted into an oxazole having excellent heat resistance, mechanical properties and electrical properties by dehydration and ring closure at the time of curing.
- the alkaline aqueous solution is an alkaline solution such as a tetramethylammonium hydroxide aqueous solution, a metal hydroxide aqueous solution, or an organic amine aqueous solution.
- the tetravalent organic group of U in formula (I) is generally a residue derived from dihydroxydiamine that reacts with a dicarboxylic acid to form a polyamide structure, preferably a tetravalent aromatic group, and its carbon atom.
- the number is preferably 6 to 40, more preferably a tetravalent aromatic group having 6 to 40 carbon atoms.
- Such diamines include 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, bis (3-amino-4-hydroxyphenyl) propane.
- Bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino- 4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl) -1,1,1,3,3,3- Examples include hexafluoropropane.
- the residue of diamine is not limited to these, You may combine the residue of these compounds individually or in combination of 2 or more types.
- the divalent organic group of V in formula (I) is generally a residue derived from a dicarboxylic acid that reacts with a diamine to form a polyamide structure, preferably a divalent aromatic group, and has a carbon atom number.
- the divalent aromatic group those in which two bonding sites are both present on the aromatic ring are preferred.
- dicarboxylic acids include isophthalic acid, terephthalic acid, 2,2-bis (4-carboxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 4,4′-dicarboxybiphenyl 4,4′-dicarboxydiphenyl ether, 4,4′-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) sulfone, 2,2-bis (p-carboxyphenyl) propane, 5-tert-butylisophthalic acid
- Aromatic dicarboxylic acids such as 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, 1,2-cyclobutanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, Aliphatic dicarboxylic acids such as 1,3-cyclopentanedicarboxylic acid, oxa
- the alkaline aqueous solution-soluble polyamide having the structural unit represented by the formula (I) may have a structure other than the structural unit represented by the formula (I).
- an amide unit containing a hydroxy group is contained in a certain proportion or more.
- the alkaline aqueous solution-soluble polyamide having the structural unit represented by the formula (I) is preferably a polyamide represented by the following formula.
- the two structural units may be arranged at random or in a block shape.
- U is a tetravalent organic group
- V and W are divalent organic groups.
- j and k represent mole fractions, and the sum of j and k is 100 mol%, j is 60 to 100 mol%, and k is 40 to 0 mol%.
- the divalent organic group represented by W is generally a residue of a diamine that reacts with a dicarboxylic acid to form a polyamide structure, and is a residue other than the diamine that forms the U, preferably a divalent group.
- a divalent aromatic group having 4 to 40 carbon atoms more preferably a divalent aromatic group having 4 to 40 carbon atoms.
- Such diamines include 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylsulfone, 4,4′-diaminodiphenyl sulfide, benzidine, m-phenylenediamine, p- Phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis (4-aminophenoxyphenyl) sulfone, bis (3-aminophenoxyphenyl) sulfone, bis (4-aminophenoxy) biphenyl, bis [4- Aromatic diamine compounds such as (4-aminophenoxy) phenyl] ether, 1,4-bis (4-aminophenoxy) benzene; LP-7100, X-22-161AS, X-22, which are diamines containing silicone groups -161A, X-22-161B, X-22
- the terminal group of the aromatic polyamide represented by the formula (I) becomes an amine having a carboxylic acid or a phenol group depending on the charging ratio of U and V. If necessary, the polymer end alone or two kinds of end cap agents are reacted, and one end or both ends are saturated aliphatic group, unsaturated aliphatic group, carboxy group, phenol hydroxyl group, sulfonic acid group, or thiol, respectively. It may be a group. At that time, the end cap ratio is preferably 30 to 100%.
- the molecular weight of the component (a) is preferably 3,000 to 200,000, more preferably 5,000 to 100,000 in terms of weight average molecular weight.
- the molecular weight is a value obtained by measuring by a gel permeation chromatography method and converting from a standard polystyrene calibration curve.
- the polyamide having the structural unit represented by the formula (I) can be generally synthesized from a dicarboxylic acid derivative and a hydroxy group-containing diamine. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting with the diamine. As the dihalide derivative, a dichloride derivative is preferable.
- the dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent.
- a halogenating agent thionyl chloride, phosphoryl chloride, phosphorus oxychloride, phosphorus pentachloride, etc., which are used in the usual acid chloride reaction of carboxylic acid can be used.
- the dichloride derivative As a method of synthesizing the dichloride derivative, it can be synthesized by reacting the dicarboxylic acid derivative and the halogenating agent in a solvent or by reacting in an excess halogenating agent and then distilling off the excess.
- the reaction solvent N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide, toluene, benzene and the like can be used.
- the amount of these halogenating agents to be used in a solvent is preferably 1.5 to 3.0 mol, more preferably 1.7 to 2.5 mol relative to the dicarboxylic acid derivative. In the case of reacting in an agent, 4.0 to 50 mol is preferable, and 5.0 to 20 mol is more preferable.
- the reaction temperature is preferably ⁇ 10 to 70 ° C., more preferably 0 to 20 ° C.
- the reaction between the dichloride derivative and the diamine is preferably performed in an organic solvent in the presence of a dehydrohalogenating agent.
- a dehydrohalogenating agent organic bases such as pyridine and triethylamine are usually used.
- organic solvent N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide and the like can be used.
- the reaction temperature is preferably ⁇ 10 to 30 ° C., more preferably 0 to 20 ° C.
- the compound (b), which generates an acid by light is a photosensitive agent, and is a compound having a function of generating an acid by light and increasing the solubility of the light irradiated portion in an alkaline aqueous solution.
- the component (b) include o-quinonediazide compounds, aryldiazonium salts, diaryliodonium salts, and triarylsulfonium salts.
- the o-quinonediazide compounds are preferable because of their high sensitivity.
- the o-quinonediazide compound can be obtained, for example, by subjecting o-quinonediazidesulfonyl chlorides to a hydroxy compound, an amino compound or the like in the presence of a dehydrochlorinating agent.
- o-quinonediazidesulfonyl chlorides include benzoquinone-1,2-diazide-4-sulfonyl chloride, 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride, and 1,2-naphthoquinone-2-diazide-4.
- -Sulfonyl chloride, etc. can be used.
- hydroxy compound examples include hydroquinone, resorcinol, pyrogallol, bisphenol A, bis (4-hydroxyphenyl) methane, 2,2-bis (4-hydroxyphenyl) hexafluoropropane, and 2,3,4-trihydroxybenzophenone.
- amino compounds include p-phenylenediamine, m-phenylenediamine, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylsulfone, and 4,4′-diaminodiphenyl sulfide.
- the compounding ratio of o-quinonediazide sulfonyl chloride and hydroxy compound and / or amino compound is such that the total of hydroxy group and amino group is 0.5 to 1 equivalent per mole of o-quinonediazide sulfonyl chloride. It is preferable.
- a preferred ratio of the dehydrochlorinating agent and o-quinonediazide sulfonyl chloride is in the range of 0.95 / 1 to 1 / 0.95.
- a preferred reaction temperature is 0 to 40 ° C., and a preferred reaction time is 1 to 10 hours.
- reaction solvent solvents such as dioxane, acetone, methyl ethyl ketone, tetrahydrofuran, diethyl ether, N-methylpyrrolidone and the like are used.
- dehydrochlorination agent include sodium carbonate, sodium hydroxide, sodium hydrogen carbonate, potassium carbonate, potassium hydroxide, trimethylamine, triethylamine, pyridine and the like.
- the content of the component (b) is based on 100 parts by weight of the component (a) in terms of the difference in dissolution rate between the exposed portion and the unexposed portion and the allowable sensitivity range. 5 to 100 parts by weight is preferred, 8 to 40 parts by weight is more preferred, and 8 to 20 parts by weight is even more preferred.
- the (c1) component aluminum chelate complex having three of the same (identical) bidentate ligands is distributed on the film surface in the pre-exposure heating stage, and the dissolution rate of the unexposed area is reduced, thereby reducing the composition.
- the sensitivity of objects can be improved.
- the aluminum chelate complex as the component (c1) is preferably an aluminum chelate complex represented by the following formula (II ′).
- R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group, and the combinations of three R 1 and R 2 are all the same.
- the monovalent organic group is an ether bond, (It may contain an ester bond or the like.)
- Examples of the monovalent organic group represented by R 1 and R 2 include an alkyl group having 1 to 20 carbon atoms and an alkoxyl group having 1 to 20 carbon atoms.
- the carbon number is 1-6.
- the content of the component (c1) is preferably 0.05 to 25 parts by weight, more preferably 0.1 to 20 parts by weight with respect to 100 parts by weight of the component (a). 0.5 to 15 parts by weight is more preferable, and 0.5 to 10 parts by weight is most preferable.
- the content of the component (c1) is 0.05 parts by weight or more, the sensitivity is improved, and when the content is 25 parts by weight or less, problems such as precipitation during frozen storage can be reduced.
- Examples of the aluminum chelate complex as the component (c1) include aluminum tris (ethyl acetoacetate) and aluminum tris (acetylacetonate), and aluminum tris (acetylacetonate) is preferable. These may be used alone or in combination of two or more.
- the aluminum chelate complex having three 2 or 3 types of bidentate ligands as the component can improve the adhesion of the composition by the interaction between the metal surface of the substrate and the aluminum chelate complex. it can.
- the aluminum chelate complex can greatly improve the adhesion of the composition as compared with a silane coupling agent or the like due to the interaction between the polyamide and the aluminum chelate.
- the aluminum chelate complex as the component (c2) is preferably an aluminum chelate complex represented by the following formula (II) or (II ′′).
- R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are each independently a hydrogen atom or a monovalent organic group.
- the monovalent organic group includes an ether bond, an ester bond, etc. May be included.
- the combination of R 1 and R 2 , the combination of R 3 and R 4 , and the combination of R 5 and R 6 are different from each other.
- the combination of two R 1 and R 2 is the same, and the combination of R 1 and R 2 and the combination of R 3 and R 4 are different from each other.
- Examples of the monovalent organic group for R 1 , R 2 , R 3 , R 4 , R 5 and R 6 include an alkyl group having 1 to 20 carbon atoms and an alkoxyl group having 1 to 20 carbon atoms.
- the carbon number is 1-6.
- Examples of the aluminum complex as component (c2) include aluminum ethyl acetoacetate diisopropylate, alkyl acetoacetate aluminum diisopropylate, aluminum bisethyl acetoacetate monoacetylacetonate, and preferably aluminum bisethyl acetoacetate mono Acetyl acetonate. These may be used alone or in combination of two or more.
- the content of the component (c2) is preferably 0.05 to 25 parts by weight, more preferably 0.1 to 20 parts by weight with respect to 100 parts by weight of the component (a). 0.5 to 10 parts by weight is more preferable.
- the content of the component (c2) 0.05 parts by weight or more, the effect of improving the adhesion to the substrate is effective, and by making it 25 parts by weight or less, problems such as precipitation during freezing storage are reduced. can do.
- the total content of the component (c1) and the component (c2) is preferably 0.1 to 50 parts by mass from the viewpoint of balance of photosensitive properties, and 1 to 20 parts by mass. Is more preferably 1.5 to 15 parts by mass, and most preferably 1.5 to 10 parts by mass.
- the photosensitive polymer composition of the present invention preferably contains (d) a crosslinking agent.
- the crosslinking agent as component (d) is itself polymerized in the step of heat-treating the photosensitive polymer composition of the present invention after coating, exposing and developing, reacting with the polymer to crosslink, or heat-treating. A compound.
- the component (d) is preferably a compound represented by the following formula (III) from the viewpoint of water absorption and chemical resistance of the resulting cured film.
- a plurality of R 7 are each independently a hydrogen atom or a monovalent organic group.
- a plurality of R 8 may each independently form a hydrogen atom, a monovalent organic group, or a ring structure in which R 8 may be bonded to each other to have a substituent.
- the monovalent organic group for R 7 is preferably an alkyl group having 1 to 20 carbon atoms.
- the carbon number is 1-6.
- the monovalent organic group R 8, an alkyl group having 1 to 30 carbon atoms, or carbon atoms in R 8 are bonded to each other may be a ring structure 1-8.
- R 8 is a ring structure, it may contain an oxygen atom or a nitrogen atom.
- (d) component can use these compounds individually or in combination of 2 or more types.
- Z is an alkyl group having 1 to 10 carbon atoms.
- R is an alkyl group having 1 to 20 carbon atoms.
- the carbon number is 1-6.
- the monovalent to tetravalent organic group of X is an alkyl group having 1 to 10 carbon atoms, an alkylidene group having 2 to 10 carbon atoms such as an ethylidene group, or a 6 to 30 carbon atoms such as phenylene group.
- R 11 is preferably hydrogen, an alkyl group or an alkenyl group.
- the alkyl group or alkenyl group preferably has 1 to 20 carbon atoms.
- R 12 is preferably an alkyl group, an alkenyl group, an alkoxyalkyl group or a methylol group.
- the carbon number is preferably 1-20. o is an integer of 1 to 4, a is an integer of 1 to 4, and b is an integer of 0 to 4. )
- the compound represented by the formula (IV) is preferably a compound represented by the following formula (IV ′).
- X is a single bond or a divalent organic group, and examples of the divalent organic group include an alkylene group having 1 to 10 carbon atoms such as a methylene group, an ethylene group and a propylene group, an ethylidene group, 2, Alkylene groups having 2 to 10 carbon atoms such as 2-propylidene groups, arylene groups having 6 to 30 carbon atoms such as phenylene groups, and some or all of hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms such as fluorine atoms Groups, and these groups may further contain a sulfone group, a carbonyl group, an ether bond, a thioether bond, an amide bond, and the like.
- Each R is independently a hydrogen atom, an alkyl group or an alkenyl group.
- the carbon number is preferably 1-20.
- R 14 and R 15 are each independently an alkyl group, an alkenyl group, a methylol group, or an alkoxyalkyl group, and these groups may partially have an ether bond, an ester bond, or the like.
- the carbon number is preferably 1-20.
- e and f are each independently an integer of 1 or 2
- g and h are each independently an integer of 0 to 3.
- X in the compounds represented by formula (IV) and formula (IV ′) is preferably a linking group represented by the following formula.
- each A is independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, or a group partially containing an oxygen atom or a fluorine atom.
- At least one of A is preferably a group partially containing a fluorine atom or an aryl group having 6 to 20 carbon atoms.
- the group containing an oxygen atom or a fluorine atom in part includes an alkyloxy group, and the group containing a fluorine atom includes a perfluoroalkyl group.
- the number of carbon atoms is preferably 1-20.
- Examples of the compound represented by (IV) include 2,2′-methylenebis (4-methyl-6-methoxymethylphenol), 4,4′-methylenebis (2-methyl-6-hydroxymethylphenol), 4 , 4′-methylenebis [2,6-bis (methoxymethyl) phenol], 4,4 ′-(1,1,1,3,3,3-hexafluoroisopropylidene) bis [2,6-bis (methoxy) Methyl) phenol], bis (2-hydroxy-3-methoxymethyl-5-methylphenyl) methane, 4,4 ′-(1-phenylethylidene) bis [2,6-bis (methoxymethyl) phenol], bis ( 2-hydroxy-3-ethoxymethyl-5-methylphenyl) methane, bis (2-hydroxy-3-propoxymethyl-5-methylphenyl) methane, bis (2-hydro Xy-3-butoxymethyl-5-methylphenyl) methane, bis [2-hydroxy-3- (1-propenyloxy) methyl-5-methylphenyl] me
- the compound which has an epoxy group for (d) component is also preferable to use.
- the compound represented by the following formula (V) or a compound having at least one of these structures as a partial structure in the molecule moderately inhibits dissolution of the component (a) in an alkaline aqueous solution, and It is preferable because the difference in dissolution rate can be improved, and good photosensitive characteristics with excellent sensitivity and resolution can be provided.
- R 1 represents a monovalent organic group
- A represents a divalent organic group selected from a hydrocarbon group, an organic group containing a carbonyl group, an organic group containing an ester bond, and an organic group containing an ether bond.
- n is an integer of 0 to 5 (for example, 0 to 2 or 1).
- m is an integer of 1 to 6 (eg, 1 to 3 or 1 to 2).
- m is preferably 2 or more.
- Examples of the monovalent organic group for R 1 include hydrocarbon groups and those containing an oxygen atom, sulfur atom, or halogen atom therein. Preferred groups are methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, isoamyl and the corresponding alkoxy and perfluoroalkyl groups.
- A includes an alkylene chain, a carbonyl group, an ester bond, an ether bond, a group composed of an alkylene chain and a carbonyl group, a group composed of an alkylene chain and an ester bond, a group composed of an alkylene chain and an ether bond, and the like. Can be mentioned. It is preferable that 1 ⁇ n + m ⁇ 6.
- R 1 , n and m are the same as those in the formula (V).
- the compound having a partial structure of the formula (V) is, for example, a compound bonded to another partial structure through a benzene ring in the formula (V).
- a compound of the following formula (VI) having two partial structures in the molecule has a high crosslinking reaction efficiency at the time of curing, and can impart high chemical resistance to the cured film, for example, at a lower temperature of 280 ° C. or lower. Even when used in the curing process, it can be preferably used because it can exhibit good mechanical properties and substrate adhesion.
- R 1 , A, n, and m are the same as those in the formula (V).
- B is a single bond, a divalent organic group represented by the following formula (VII), or one or more selected from an aromatic ring, an oxygen atom, a sulfur atom, a silicon atom, a carbonyl group, a sulfonyl group, and a Si—O bond.
- a divalent organic group is included.
- X is an alkylene group having 1 to 10 carbon atoms that connects two benzene rings of the formula (VI), and a part or all of the hydrogen atoms may be replaced by halogen atoms.
- Y is a hydrogen atom contained in the alkylene group or a substituent of the alkylene group, and is an alkyl group, aryl group or alkoxy group having 1 to 10 carbon atoms, and a part of the alkyl group, aryl group or alkoxy group Alternatively, all hydrogen atoms may be replaced with halogen atoms.
- Preferred structures of B include the following structures.
- These compounds can be used in combination of two or more.
- examples of the compound having three or more partial structures of the formula (V) include novolak resins, modified novolak resins, resins obtained by partially or entirely epoxy-modifying phenolic hydroxyl groups of polyhydroxystyrene, and the like. These epoxy resins can be suitably used for appropriately adjusting the strength and elastic modulus of the cured film.
- the number of epoxy groups in one molecule is 2 or more from the viewpoint of giving mechanical properties of the cured film, particularly sufficient elongation at break, and 5 or more is sufficient chemical resistance. It is preferable in order to express sex.
- the blending amount when component (d) is blended is 100 parts by weight of component (a) from the viewpoint of development time, unexposed part remaining film ratio and cured film physical properties.
- the amount is preferably 1 to 30 parts by weight, more preferably 3 to 25 parts by weight, and still more preferably 5 to 25 parts by weight.
- the photosensitive polymer composition of the present invention may further contain (e) an alkoxysilane adhesive.
- the alkoxysilane compound of the alkoxysilane adhesive includes, for example, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, ⁇ -glycidoxypropyltriethoxysilane, and ⁇ -methacryloxypropyltrimethoxysilane.
- the content of the component (e) is preferably 0.1 to 20 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the component (a). It is.
- the content of the component (e) is 0.1% by weight or more, good adhesion to the substrate can be imparted to the composition, and when the content is 20 parts by weight or less, good storability is obtained.
- the photosensitive polymer composition of the present invention is preferably a compound selected from the group consisting of (f) an onium salt, a diaryl compound and a tetraalkylammonium salt, and inhibits dissolution of the component (a) in an alkaline aqueous solution. It further contains a compound.
- Examples of the onium salt include iodonium salts such as diaryl iodonium salts, sulfonium salts such as triarylsulfonium salts, diazonium salts such as phosphonium salts and aryldiazonium salts.
- Examples of the diaryl compound include compounds in which two aryl groups such as diaryl urea, diaryl sulfone, diaryl ketone, diaryl ether, diaryl propane, and diaryl hexafluoropropane are bonded via a bonding group. Groups are preferred.
- Examples of the tetraalkylammonium salt include tetraalkylammonium halides in which the alkyl group is a methyl group, an ethyl group, or the like.
- Examples of the component (f) exhibiting a good dissolution inhibiting effect include diaryliodonium salts, diarylurea compounds, diarylsulfone compounds, tetramethylammonium halide compounds, and the like.
- Examples of the diarylurea compound include diphenylurea and dimethyldiphenylurea, and examples of the tetramethylammonium halide compound include tetramethylammonium chloride, tetramethylammonium bromide, and tetramethylammonium iodide.
- the component (f) is preferably a diaryliodonium salt represented by the following formula (VIII).
- X ⁇ represents a counter anion.
- R 8 and R 9 are each independently an alkyl group or an alkenyl group.
- m and n are each independently an integer of 0 to 5.
- X ⁇ in the formula (VIII) is nitrate ion, boron tetrafluoride ion, perchlorate ion, trifluoromethanesulfonate ion, p-toluenesulfonate ion, thiocyanate ion, chlorine ion, bromine ion, iodine ion, etc. Can be mentioned.
- diaryliodonium salt represented by the formula (VIII) examples include diphenyliodonium nitrate, bis (p-tert-butylphenyl) iodonium nitrate, diphenyliodonium trifluoromethanesulfonate, and bis (p-tert-butylphenyl). Examples thereof include iodonium trifluoromethanesulfonate, diphenyliodonium bromide, diphenyliodonium chloride, and diphenyliodonium iodide.
- diphenyliodonium nitrate diphenyliodonium trifluoromethanesulfonate
- diphenyliodonium-8-anilinonanaphthalene-1-sulfonate are preferred because of their high effects.
- the content of the component (f) is preferably 0.01 to 15 parts by weight, more preferably 0.01 to 10 parts by weight with respect to 100 parts by weight of the component (a) from the viewpoint of sensitivity and an allowable range of development time. 0.05 to 3 parts by weight is more preferable.
- the photosensitive polymer composition of the present invention contains components (a), (b), (c1), and (c2), and can further contain components (d), (e), and (f).
- the composition of the present invention may include the components (a), (b), (c1) and (c2), and optionally the components (d), (e) and (f). b), (c1) and (c2) components, and the total of the components (d), (e) and (f) excluding the solvent is, for example, 90% by weight or more, 95% by weight or more, 99% by weight or more, Alternatively, it may be 100% by weight.
- the photosensitive polymer composition of the present invention can further contain the following solvents, additives, and the like as long as the effects of the present invention are not impaired.
- the solvent examples include aprotic polar solvents such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, and ⁇ -butyrolactone. These solvents may be used alone or in combination of two or more.
- the amount of the solvent is not particularly limited, but is generally adjusted so that the amount of the solvent in the composition is 20 to 90% by weight.
- the photosensitive polymer composition of the present invention can contain a suitable surfactant or leveling agent in order to prevent coatability, for example, striation (film thickness unevenness) and improve developability.
- a suitable surfactant or leveling agent include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenol ether, and specific commercial products include Megafax F171, F173, R-08 (trade name, manufactured by Dainippon Ink and Chemicals), Florard FC430, FC431 (trade name, Sumitomo 3M), organosiloxane polymers KP341, KBM303, KBM403, KBM803 (Shin-Etsu Chemical Co., Ltd.) Company name).
- a pattern can be produced by applying the photosensitive polymer composition of the present invention.
- a pattern having a good shape and excellent sensitivity, resolution, adhesiveness and heat resistance can be obtained.
- the method for producing a pattern of the present invention includes a step of applying and drying the photosensitive polymer composition of the present invention on a support substrate, a step of exposing, a step of developing, and a step of heat treatment.
- Examples of the support substrate to which the composition of the present invention is applied include a glass substrate, an aluminum substrate, a semiconductor, a metal oxide insulator (for example, TiO 2 , SiO 2, etc.), silicon nitride, and the like.
- Examples of the coating method include a coating method such as a spinner, and a photosensitive polymer film can be formed by drying the composition of the present invention using a hot plate, an oven or the like after spin coating.
- the photosensitive polymer composition formed as a film on the support substrate is irradiated with actinic rays such as ultraviolet rays, visible rays, and radiations through a mask.
- actinic ray light source is preferably i-line.
- the pattern film is obtained by removing the exposed portion with a developer.
- a developer for example, an alkaline aqueous solution such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide is preferable, and the base concentration of these aqueous solutions is 0.1 to 10% by weight is preferable.
- the developer may further contain an alcohol and / or a surfactant, and these are preferably 0.01 to 10 parts by weight, more preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the developer. Can be included.
- the pattern coating is thermally cured, and a heat-resistant polyoxazole pattern cured film having an oxazole ring or other functional group is obtained.
- the temperature of the heat treatment is preferably 150 to 450 ° C.
- FIG. 1 to 5 are schematic cross-sectional views for explaining a manufacturing process of a semiconductor device having a multilayer wiring structure, and show a series of processes from a first process to a fifth process.
- a semiconductor substrate 1 such as a Si substrate having a circuit element (not shown) is covered with a protective film 2 such as a silicon oxide film except for a predetermined portion of the circuit element, and is exposed on the exposed circuit element.
- a first conductor layer 3 is formed.
- a film made of polyimide resin or the like as the interlayer insulating film layer 4 is formed on the semiconductor substrate 1 by a spin coating method or the like (first step, FIG. 1).
- a photosensitive resin layer 5 such as chlorinated rubber or phenol novolac is formed on the interlayer insulating film layer 4 as a mask by a spin coating method, and a predetermined portion of the interlayer insulating film layer 4 is formed by a known photolithography technique.
- a window 6A is provided so as to be exposed (second step, FIG. 2).
- the interlayer insulating film layer 4 exposed to the window 6A is selectively etched by a dry etching means using a gas such as oxygen or carbon tetrafluoride to open the window 6B.
- the photosensitive resin layer 5 is completely removed using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the window 6B (third step, FIG. 3).
- the second conductor layer 7 is formed using a known photolithography technique, and the electrical connection with the first conductor layer 3 is completely performed (fourth step, FIG. 4).
- each layer can be formed by repeating the above steps.
- the surface protective film 8 is formed.
- the photosensitive polymer composition of the present invention is applied and dried by a spin coating method, irradiated with light from a mask on which a pattern for forming a window 6C is formed at a predetermined portion, and then developed with an alkaline aqueous solution. Then, a pattern film is formed. Then, this pattern film is heated to form a pattern cured film as the surface protective film layer 8 (fifth step, FIG. 5).
- the surface protective film layer 8 protects the conductor layer from external stress, ⁇ rays, etc., and the resulting semiconductor device is excellent in reliability. In addition, you may form the said interlayer insulation film using the photosensitive polymer composition of this invention.
- the photosensitive polymer composition of the present invention can be used for electronic parts such as semiconductor devices and multilayer wiring boards, and specifically, surface protection films and interlayer insulating films of semiconductor devices, and interlayer insulation of multilayer wiring boards. It can be used for forming a film or the like.
- the electronic component of the present invention is not particularly limited except that it has a surface protective film or an interlayer insulating film formed using the photosensitive polymer composition of the present invention, and can have various structures.
- Synthesis example 1 [Synthesis of Polybenzoxazole Precursor (Component (a))] In a 0.5 liter flask equipped with a stirrer and a thermometer, 15.48 g of 4,4′-diphenyl ether dicarboxylic acid and 90 g of N-methylpyrrolidone were charged, and the flask was cooled to 5 ° C., and then 12.64 g of thionyl chloride. Was added dropwise and reacted for 30 minutes to obtain a solution of 4,4′-diphenyl ether dicarboxylic acid chloride.
- N-methylpyrrolidone 87.5 g was charged into a 0.5 liter flask equipped with a stirrer and a thermometer, and 18.30 g of bis (3-amino-4-hydroxyphenyl) hexafluoropropane was added and stirred. After dissolution, 8.53 g of pyridine was added, and while maintaining the temperature at 0 to 5 ° C., a solution of 4,4′-diphenyl ether dicarboxylic acid chloride was added dropwise over 30 minutes, and then stirring was continued for 30 minutes.
- polybenzoxazole precursor polybenzoxazole precursor
- Synthesis example 2 [Synthesis of polyimide precursor (component (a)) In a 0.2 liter flask equipped with a stirrer and a thermometer, 10 g (32 mmol) of 3,3 ′, 4,4′-diphenyl ether tetracarboxylic dianhydride (ODPA) and 3.87 g (65 mmol) of isopropyl alcohol were added. Was dissolved in 45 g of N-methylpyrrolidone, and a catalytic amount of 1,8-diazabicycloundecene was added, followed by heating at 60 ° C. for 2 hours, followed by stirring at room temperature (25 ° C.) for 15 hours. Esterification was performed. Thereafter, 7.61 g (64 mmol) of thionyl chloride was added under ice cooling, and the mixture was returned to room temperature and reacted for 2 hours to obtain an acid chloride solution.
- ODPA 4,4′-diphenyl ether tetrac
- required by GPC method standard polystyrene conversion of the polymer I was 14,580, and dispersion degree was 1.6.
- the polymer II had a weight average molecular weight of 19,400 and a dispersity of 2.2.
- Examples 1 to 17 and Comparative Examples 1 to 8 (A) 100 parts by weight of the polymer I or II prepared in Synthesis Example 1 or 2 as component, and (b) component, (c) component, (d) component, and (e) component as shown in Tables 1 and 2, respectively.
- the compounds shown were dissolved in a solvent in which ⁇ -butyrolactone / propylene glycol monomethyl ether acetate was mixed at a weight ratio of 9: 1 in the blending amounts shown in Tables 1 and 2 to prepare photosensitive polymer compositions, respectively.
- the numbers in the tables in the columns of (b), (c), (d) and (e) indicate the amount added (parts by weight) relative to 100 parts by weight of component (a).
- the usage-amount of the solvent was 1.5 times with respect to 100 weight part of (a) component in any case.
- the prepared photosensitive polymer composition was spin coated on a silicon wafer to form a coating film having a dry film thickness of 7 to 12 ⁇ m.
- i-line exposure 100 to 1000 mJ / cm 2 was performed on the coating film through an interference filter.
- development was performed with a 2.38 wt% aqueous solution of tetramethylammonium hydroxide (TMAH) until the exposed silicon wafer was exposed, followed by rinsing with water, and the remaining film ratio (ratio of film thickness before and after development) was 80.
- TMAH tetramethylammonium hydroxide
- the prepared photosensitive polymer composition was spin-coated on a silicon wafer on which aluminum was deposited, and then heated at 120 ° C. for 3 minutes to form a coating film having a thickness of 8 ⁇ m. This coating film was exposed and developed to form a pattern. The formed pattern was heated in an inert gas oven in a nitrogen atmosphere at 100 ° C. for 60 minutes, and then heated at 320 ° C. for 1 hour to obtain a cured film. The cured film patterned on this substrate was mixed with Meltex FZ-7350 and FBZ2 mixed aqueous solution (FZ-7350 / FBZ2 / water) for electroless nickel plating mainly composed of alkaline aqueous solution at 23 ° C.
- the photosensitive polymer composition of the present invention has a good storage stability and maintains a good shape pattern, and is excellent in adhesion, resolution and sensitivity to the substrate. It turns out that it is.
- the comparative example does not use the component (c1) and the component (c2) together, the storage stability is poor in the comparative examples 6, 7, and 8, and the substrate is used in the comparative examples 1, 2, 3, 5, 6, and 7. In the comparative examples 1, 2, 4, 5, 7, and 8, the sensitivity was not improved.
- the photosensitive polymer composition of the present invention can be suitably used as a material for a surface protective film or an interlayer insulating film, and can produce highly reliable electronic components with a high yield.
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Abstract
Description
このような感光性樹脂に対して、近年は、デバイスの構造の変化に伴い、各種配線層への適用が行われており、ここでは、例えばアルミニウム配線との密着性や無電解めっき液等のメッキ液耐性が要求されつつある。
1.下記成分(a)、(b)、(c1)及び(c2)を含有してなる感光性重合体組成物。
(a)アルカリ性水溶液に可溶なポリマー
(b)光により酸を発生する化合物
(c1)同種の二座配位子を3つ有するアルミニウムキレート錯体
(c2)2種又は3種の二座配位子を3つ有するアルミニウムキレート錯体
2.前記(a)成分が、下記式(I)で表される構造単位を有するアルカリ水溶液可溶性ポリアミドである1に記載の感光性重合体組成物。
3.前記(c1)成分が一般式(II’)で表されるアルミニウムキレート錯体であり、(c2)成分が一般式(II)又は(II’’)で表されるアルミニウムキレート錯体である、1又は2に記載の感光性重合体組成物。
但し、式(II’)において、3つのR1及びR2の組み合わせは全て同一である。式(II)において、R1及びR2の組み合わせ、R3及びR4の組み合わせ、並びにR5及びR6の組み合わせは互いに異なる。式(II'')において、2つのR1及びR2の組み合わせは同一であり、R1及びR2の組み合わせ並びにR3及びR4の組み合わせは互いに異なる。)
4.(d)架橋剤をさらに含有する1~3のいずれかに記載の感光性重合体組成物。
5.前記(d)成分が、下記式(III)で表される化合物、下記式(IV)で表される化合物、下記式(V)で表される化合物、及び下記式(V)で表される構造を部分構造として少なくとも1つ有する化合物から選択される化合物である1~4のいずれかに記載の感光性樹脂組成物。
6.前記(d)成分が、式(III)で表される化合物である5に記載の感光性重合体組成物。
7.(e)アルコキシシラン接着剤をさらに含有する1~6のいずれかに記載の感光性重合体組成物。
8.(a)成分100重量部に対して、(b)成分5~100重量部、(c1)及び(c2)成分0.1~50重量、(d)成分1~30重量部、(e)成分0.1~20重量部を含有する7に記載の感光性重合体組成物。
9.1~8のいずれかに記載の感光性重合体組成物を支持基板上に塗布し乾燥する工程、露光する工程、現像する工程及び加熱処理する工程を含むパターンの製造方法。
10.前記露光する工程において使用する光源が、i線である9記載のパターンの製造方法。
11.1~8のいずれかに記載の感光性重合体組成物を硬化してなる硬化物。
12.11に記載の硬化物を表面保護膜又は層間絶縁膜として有してなる電子部品。
尚、(a)成分は、上述した主鎖骨格を2種以上有する共重合体でもよく、又は2種以上の上記ポリマーの混合物でもよい。
尚、上記アルカリ水溶液とは、テトラメチルアンモニウムヒドロキシド水溶液、金属水酸化物水溶液、有機アミン水溶液等のアルカリ性の溶液である。
上記4価の芳香族基としては、4個の結合部位がいずれも芳香環上に存在し、2個のヒドロキシ基がそれぞれUに結合しているアミンのオルト位に位置した構造を有するジアミンの残基が好ましい。
ジアミンの残基は、これらに限定されず、これらの化合物の残基を単独で又は2種以上を組み合わせてもよい。
2価の芳香族基としては、2個の結合部位がいずれも芳香環上に存在するものが好ましい。
これらの化合物の残基を、単独で又は2種以上を組み合わせて使用することができる。
jとkは、モル分率を示し、jとkの和は100モル%であり、jが60~100モル%、kが40~0モル%である。)
これらの化合物は、単独で又は2種以上を組み合わせて用いることができる。
必要に応じてポリマー末端に単独で又は2種のエンドキャップ剤を反応させて片末端又は両末端をそれぞれ飽和脂肪族基、不飽和脂肪族基、カルボキシ基、フェノール水酸基、スルホン酸基、又はチオール基としてもよい。
その際、エンドキャップ率は30~100%が好ましい。
ここで、分子量は、ゲルパーミエーションクロマトグラフィー法により測定し、標準ポリスチレン検量線より換算して得た値である。
具体的には、ジカルボン酸誘導体をジハライド誘導体に変換後、前記ジアミンとの反応を行うことにより合成できる。ジハライド誘導体としては、ジクロリド誘導体が好ましい。
ハロゲン化剤としては通常のカルボン酸の酸クロライド化反応に使用される、塩化チオニル、塩化ホスホリル、オキシ塩化リン、五塩化リン等が使用できる。
反応温度は、-10~70℃が好ましく、0~20℃がより好ましい。
脱ハロゲン化水素剤としては、通常、ピリジン、トリエチルアミン等の有機塩基が使用される。また、有機溶媒としは、N-メチル-2-ピロリドン、N-メチル-2-ピリドン、N,N-ジメチルアセトアミド、N,N-ジメチルホルムアミド等が使用できる。
反応温度は、-10~30℃が好ましく、0~20℃がより好ましい。
上記(b)成分としては、o-キノンジアジド化合物、アリールジアゾニウム塩、ジアリールヨードニウム塩、トリアリールスルホニウム塩等が挙げられ、o-キノンジアジド化合物は感度が高く好ましい。
o-キノンジアジドスルホニルクロリド類としては、例えば、ベンゾキノン-1,2-ジアジド-4-スルホニルクロリド、1,2-ナフトキノン-2-ジアジド-5-スルホニルクロリド、1,2-ナフトキノン-2-ジアジド-4-スルホニルクロリド、等が使用できる。
脱塩酸剤とo-キノンジアジドスルホニルクロリドの好ましい割合は、0.95/1~1/0.95の範囲である。
好ましい反応温度は0~40℃、好ましい反応時間は1~10時間である。
脱塩酸剤としては、炭酸ナトリウム、水酸化ナトリウム、炭酸水素ナトリウム、炭酸カリウム、水酸化カリウム、トリメチルアミン、トリエチルアミン、ピリジン等が挙げられる。
(c1)成分の含有量を0.05重量部以上とすることにより感度が向上し、25重量部以下とすることにより冷凍保存時においての析出等の問題を低減することができる。
但し、式(II)において、R1及びR2の組み合わせ、R3及びR4の組み合わせ、並びにR5及びR6の組み合わせは互いに異なる。式(II'')において、2つのR1及びR2の組み合わせは同一であり、R1及びR2の組み合わせ並びにR3及びR4の組み合わせは互いに異なる。)
これらは単独でも2種以上を組み合わせて用いてもよい。
(d)成分である架橋剤は、本発明の感光性重合体組成物を塗布、露光及び現像後に加熱処理する工程において、ポリマーと反応して架橋する、又は加熱処理する工程において自身が重合する化合物である。
複数のR8は、各々独立に水素原子、1価の有機基、又はR8が互いに結合して置換基を有してもよい環構造を形成してもよい。)
R8の1価の有機基としては、炭素数1~30のアルキル基、又はR8が互いに結合した炭素数が1~8の環構造であってもよい。R8が環構造である場合、酸素原子又は窒素原子を含んでもよい。
Rは炭素数1~20のアルキル基である。例えば炭素数は1~6である。)
R11は好ましくは水素、アルキル基又はアルケニル基である。アルキル基又はアルケニル基の炭素数は1~20が好ましい。
R12は好ましくはアルキル基、アルケニル基、アルコキシアルキル基又はメチロール基である。炭素数は1~20が好ましい。
oは1~4の整数であり、aは1~4の整数であり、bは0~4の整数である。)
Rは、それぞれ独立に、水素原子、アルキル基又はアルケニル基である。炭素数は1~20が好ましい。
R14及びR15は、それぞれ独立に、アルキル基,アルケニル基、メチロール基又はアルコキシアルキル基であり、これらの基は一部にエーテル結合,エステル結合等を有していてもよい。炭素数は1~20が好ましい。
e及びfは、それぞれ独立に、1又は2の整数であり、g及びhは、それぞれ独立に、0~3の整数である。)
これらの化合物は単独又は2種類以上組み合わせ用いることができる。
以下の式(V)で示される化合物又はこの構造を部分構造として分子内に少なくとも1つ有する化合物は(a)成分のアルカリ水溶液への溶解を適度に阻害し、露光部と未露光部との溶解速度差を向上させ、感度、解像度に優れる良好な感光特性を与えることができるので好ましい。
その部分構造を2個分子内に有する下記式(VI)の化合物は、硬化時の架橋反応効率が高く、硬化膜により高い耐薬品性を付与できる点や、例えば280℃以下のより低温での硬化プロセスで用いた場合でも良好な機械特性、基板密着性を発揮できる点で、好ましく使用することができる。
さらに、式(V)の部分構造を3つ以上有する化合物としては、ノボラック樹脂や変性ノボラック樹脂、ポリヒドロキシスチレンのフェノール性水酸基を一部又は全てエポキシ変性した樹脂等を例として挙げることができる。これらエポキシ樹脂は、硬化膜の強度や弾性率を適宜調整する上で好適に用いることができる。このような化合物は1分子中のエポキシ基の数が2つ以上であることが、硬化膜の機械特性、特に十分な破断伸びを与える点で好ましく、5つ以上であることが十分な耐薬品性を発現する上で好ましい。
(e)アルコキシシラン接着剤のアルコキシシラン化合物としては、例えば、ビス(2-ヒドロキシエチル)-3-アミノプロピルトリエトキシシラン、γ-グリシドキシプロピルトリエトキシシラン、γ-メタクリロキシプロピルトリメトキシシラン、尿素プロピルトリエトキシシラン、メチルフェニルシランジオール、エチルフェニルシランジオール、n-プロピルフェニルシランジオール、イソプロピルフェニルシランジオール、n-ブチルシフェニルシランジオール、イソブチルフェニルシランジオール、tert-ブチルフェニルシランジオール、ジフェニルシランジオール、エチルメチルフェニルシラノール、n-プロピルメチルフェニルシラノール、イソプロピルメチルフェニルシラノール、n-ブチルメチルフェニルシラノール、イソブチルメチルフェニルシラノール、tert-ブチルメチルフェニルシラノール、エチルn-プロピルフェニルシラノール、エチルイソプロピルフェニルシラノール、n-ブチルエチルフェニルシラノール、イソブチルエチルフェニルシラノール、tert-ブチルエチルフェニルシラノール、メチルジフェニルシラノール、エチルジフェニルシラノール、n-プロピルジフェニルシラノール、イソプロピルジフェニルシラノール、n-ブチルジフェニルシラノール、イソブチルジフェニルシラノール、tert-ブチルジフェニルシラノール、フェニルシラントリオール、1,4-ビス(トリヒドロキシシリル)ベンゼン、1,4-ビス(メチルジヒドロキシシリル)ベンゼン、1,4-ビス(エチルジヒドロキシシリル)ベンゼン、1,4-ビス(プロピルジヒドロキシシリル)ベンゼン、1,4-ビス(ブチルジヒドロキシシリル)ベンゼン、1,4-ビス(ジメチルヒドロキシシリル)ベンゼン、1,4-ビス(ジエチルヒドロキシシリル)ベンゼン、1,4-ビス(ジプロピルドロキシシリル)ベンゼン、1,4-ビス(ジブチルヒドロキシシリル)ベンゼン等が挙げられる。
これらのうち、好ましくはビス(2-ヒドロキシエチル)-3-アミノプロピルトリエトキシシランが好ましい。これらは単独でも2種以上を組み合わせて用いてもよい。
(e)成分の含有量を0.1重量%以上とすることにより、基板に対する良好な密着性を組成物に与えることができ、20重量部以下とすることにより良好な保存性が得られる。
上記ジアリール化合物としては、ジアリール尿素、ジアリールスルホン、ジアリールケトン、ジアリールエーテル、ジアリールプロパン、ジアリールヘキサフルオロプロパン等の二つのアリール基が結合基を介して結合した化合物が挙げられ、当該アリール基は、フェニル基が好ましい。
テトラアルキルアンモニウム塩としては、当該アルキル基がメチル基、エチル基等であるテトラアルキルアンミニウムハライドが挙げられる。
上記ジアリール尿素化合物としてはジフェニル尿素、ジメチルジフェニル尿素等が挙げられ、テトラメチルアンモニウムハライド化合物としては、テトラメチルアンモニウムクロライド、テトラメチルアンモニウムブロミド、テトラメチルアンモニウムヨーダイド等が挙げられる。
R8及びR9は、それぞれ独立に、アルキル基又はアルケニル基である。
m及びnは、それぞれ独立に、0~5の整数である。)
これらのうち、ジフェニルヨードニウムニトラート、ジフェニルヨードニウムトリフルオロメタンスルホナート及びジフェニルヨードニウム-8-アニリノナフタレン-1-スルホナートが、効果が高く好ましい。
尚、本発明の組成物は(a)、(b)、(c1)及び(c2)成分、並び任意に(d)、(e)及び(f)成分を含めばよく、(a)、(b)、(c1)及び(c2)成分、並び任意の(d)、(e)及び(f)成分の溶媒を除く合計が、例えば90重量%以上、95重量%以上、99重量%以上、又は100重量%でもよい。
本発明の感光性重合体組成物は、これら成分の他に、下記溶剤、添加剤等を本発明の効果を損なわない範囲でさらに含むことができる。
このような界面活性剤あるいはレベリング剤としては、例えば、ポリオキシエチレンウラリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル、ポリオキシエチレンオクチルフェノールエーテル等があり、具体的な市販品としては、メガファックスF171、F173、R-08(大日本インキ化学工業株式会社製商品名)、フロラードFC430、FC431(住友スリーエム株式会社商品名)、オルガノシロキサンポリマーKP341、KBM303、KBM403、KBM803(信越化学工業株式会社製商品名)等が挙げられる。
特に本発明の感光性重合体組成物を用いることにより、感度、解像度、接着性及び耐熱性に優れ、良好な形状のパターンが得られる。
塗布法としては、スピンナー等の塗布法が挙げられ、本発明の組成物を回転塗布後にホットプレート、オーブン等を用いて乾燥することにより感光性重合体被膜を形成することができる。
この活性光線の光源は、i線であると好ましい。
用いる現像液としては、例えば、水酸化ナトリウム、水酸化カリウム、ケイ酸ナトリウム、アンモニア、エチルアミン、ジエチルアミン、トリエチルアミン、トリエタノールアミン、テトラメチルアンモニウムヒドロキシド等のアルカリ水溶液が好ましく、これら水溶液の塩基濃度は、0.1~10重量%であると好ましい。
上記現像液は、さらにアルコール類及び/又は界面活性剤を含んでもよく、これらは現像液100重量部に対して、好ましくは0.01~10重量部、より好ましくは0.1~5重量部の範囲で含むことができる。
上記加熱処理の温度は、好ましくは150~450℃である。
図1~図5は、多層配線構造を有する半導体装置の製造工程を説明する概略断面図であり、第1の工程から第5の工程へと一連の工程を表している。
この表面保護膜層8は、導体層を外部からの応力、α線等から保護し、得られる半導体装置は信頼性に優れる。
尚、上記層間絶縁膜を本発明の感光性重合体組成物を用いて形成してもよい。
本発明の電子部品は、本発明の感光性重合体組成物を用いて形成される表面保護膜又は層間絶縁膜を有すること以外は特に制限されず、様々な構造をとることができる。
[ポリベンゾオキサゾール前駆体((a)成分)の合成]
攪拌機、温度計を備えた0.5リットルのフラスコ中に、4,4’-ジフェニルエーテルジカルボン酸15.48g、N-メチルピロリドン90gを仕込み、フラスコを5℃に冷却した後、塩化チオニル12.64gを滴下し、30分間反応させて、4,4’-ジフェニルエーテルジカルボン酸クロリドの溶液を得た。
次いで、攪拌機、温度計を備えた0.5リットルのフラスコ中に、N-メチルピロリドン87.5gを仕込み、ビス(3-アミノ-4-ヒドロキシフェニル)ヘキサフルオロプロパン18.30gを添加し、攪拌溶解した後、ピリジン8.53gを添加し、温度を0~5℃に保ちながら、4,4’-ジフェニルエーテルジカルボン酸クロリドの溶液を30分間で滴下した後、30分間攪拌を続けた。攪拌した溶液を3リットルの水に投入し、析出物を回収、純水で3回洗浄した後、減圧乾燥してポリヒドロキシアミド(ポリベンゾオキサゾール前駆体)を得た(以下、ポリマーIとする)。
[ポリイミド前駆体((a)成分)の合成]
攪拌機及び温度計を備えた0.2リットルのフラスコ中に、3,3’,4,4’-ジフェニルエーテルテトラカルボン酸二無水物(ODPA)10g(32mmol)とイソプロピルアルコール3.87g(65mmol)とをN-メチルピロリドン45gに溶解し、1,8-ジアザビシクロウンデセンを触媒量添加の後に、60℃にて2時間加熱を行い、続いて室温下(25℃)で15時間攪拌し、エステル化を行った。その後、氷冷下で塩化チオニルを7.61g(64mmol)加え、室温に戻し2時間反応を行い酸クロリドの溶液を得た。
尚、GPC法による重量平均分子量の測定条件は以下の通りであり、ポリマー0.5mgに対して溶媒[THF/DMF=1/1(容積比)]1mLの溶液を用いて測定した。
測定装置:検出器 株式会社日立製作所製L4000 UV
ポンプ:株式会社日立製作所製L6000
株式会社島津製作所製C-R4A Chromatopac
測定条件:カラム Gelpack GL-S300MDT-5 x2本
溶離液:THF/DMF=1/1 (容積比)
LiBr(0.03mol/L)、H3PO4(0.06mol/L)
流速:1.0mL/min、検出器:UV270nm
(a)成分として合成例1又は2で調製したポリマーI又はIIを100重量部、並びに(b)成分、(c)成分、(d)成分及び(e)成分として、それぞれ表1及び2に示す化合物を表1及び2に示す配合量で、γ-ブチロラクトン/プロピレングリコールモノメチルエーテルアセテートを重量比9:1で混合した溶剤に溶解して、それぞれ感光性重合体組成物を調製した。
尚、表1及び2において、(b)、(c)、(d)及び(e)成分の各欄における表内の数字は、(a)成分100重量部に対する添加量(重量部)を示す。また、溶剤の使用量は、いずれも(a)成分100重量部に対して1.5倍で用いた。
調製した感光性重合体組成物を冷凍庫中約-20℃で保管し、2週間後、組成物中に析出物が確認されなかった場合を「A」と評価し、組成物中に析出物が確認された場合を「B」と評価した。
調製した感光性重合体組成物をシリコンウエハ上にスピンコートし、乾燥膜厚7~12μmの塗膜を形成した。超高圧水銀灯を用いて、この塗膜に対して100~1000mJ/cm2のi線露光を干渉フィルターを介して行った。露光後、テトラメチルアンモニウムヒドロキシド(TMAH)の2.38重量%水溶液にて露光部のシリコンウエハが露出するまで現像した後、水でリンスし残膜率(現像前後の膜厚の比)80%以上が得られるパターン形成に必要な最小露光量(感度)を求めた。
パターン開口可能な最小露光量の1.2倍の露光量におけるSiウエハー上のラインアンドスペースパターンにおいて金属顕微鏡(OLYMPUS MX61L、オリンパス(株)製)を用いてパターン性の確認を行い、ラインパターンの剥がれが見られる最小の開口サイズを解像度とした。解像度が小さいほど、より細かいパターン形成ができるため、好ましい。
アルミを蒸着したシリコンウエハ上に、調製した感光性重合体組成物をスピンコートした後、120℃で3分間加熱して膜厚8μmの塗膜を形成した。この塗膜について、露光及び現像を行いパターン形成した。形成したパターンを不活性ガスオーブン中、窒素雰囲気下、100℃で60分加熱した後、320℃で1時間加熱して硬化膜を得た。
この基板上でパターン化した硬化膜を、23℃で、アルカリ性水溶液を主成分とするメルテックス製無電解ニッケルめっき用薬液メルプレートFZ-7350、同FBZ2の混合水溶液(FZ-7350/FBZ2/水=200ml/10ml/790ml、メルテックス(株)製)に10分間浸漬した。
開口パターンから、基板と樹脂層の界面への薬液の染み込みの有無を、上方からの金属顕微鏡による観察で評価した。金属顕微鏡で染み込みが2μm以上確認できる程度の場合を「C」、0.5μm以上2 μm未満の場合を「B」、全く染み込みが確認できない場合を「A」と評価した。
この明細書に記載の文献の内容を全てここに援用する。
Claims (12)
- 下記成分(a)、(b)、(c1)及び(c2)を含有してなる感光性重合体組成物。
(a)アルカリ性水溶液に可溶なポリマー
(b)光により酸を発生する化合物
(c1)同種の二座配位子を3つ有するアルミニウムキレート錯体
(c2)2種又は3種の二座配位子を3つ有するアルミニウムキレート錯体 - 前記(c1)成分が一般式(II’)で表されるアルミニウムキレート錯体であり、(c2)成分が一般式(II)又は(II’’)で表されるアルミニウムキレート錯体である、請求項1又は2に記載の感光性重合体組成物。
但し、式(II’)において、3つのR1及びR2の組み合わせは全て同一である。式(II)において、R1及びR2の組み合わせ、R3及びR4の組み合わせ、並びにR5及びR6の組み合わせは互いに異なる。式(II'')において、2つのR1及びR2の組み合わせは同一であり、R1及びR2の組み合わせ並びにR3及びR4の組み合わせは互いに異なる。) - (d)架橋剤をさらに含有する請求項1~3のいずれかに記載の感光性重合体組成物。
- 前記(d)成分が、下記式(III)で表される化合物、下記式(IV)で表される化合物、下記式(V)で表される化合物、及び下記式(V)で表される構造を部分構造として少なくとも1つ有する化合物から選択される化合物である請求項4に記載の感光性樹脂組成物。
- 前記(d)成分が、式(III)で表される化合物である請求項5に記載の感光性重合体組成物。
- (e)アルコキシシラン接着剤をさらに含有する請求項1~6のいずれかに記載の感光性重合体組成物。
- (a)成分100重量部に対して、(b)成分5~100重量部、(c1)及び(c2)成分0.1~50重量部、(d)成分1~30重量部、(e)成分0.1~20重量部を含有する請求項7に記載の感光性重合体組成物。
- 請求項1~8のいずれかに記載の感光性重合体組成物を支持基板上に塗布し乾燥する工程、露光する工程、現像する工程及び加熱処理する工程を含むパターンの製造方法。
- 前記露光する工程において使用する光源が、i線である請求項9に記載のパターンの製造方法。
- 請求項1~8のいずれかに記載の感光性重合体組成物を硬化してなる硬化物。
- 請求項11に記載の硬化物を表面保護膜又は層間絶縁膜として有してなる電子部品。
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KR (1) | KR101452604B1 (ja) |
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TWI624730B (zh) * | 2012-02-27 | 2018-05-21 | Tokyo Ohka Kogyo Co Ltd | 正型光阻組成物、光阻層合體、光阻圖型之製造方法、及連接用端子之製造方法 |
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TWI484293B (zh) * | 2012-11-07 | 2015-05-11 | Chi Mei Corp | 感光性樹脂組成物及其應用 |
WO2017217293A1 (ja) * | 2016-06-15 | 2017-12-21 | 東レ株式会社 | 感光性樹脂組成物 |
KR102650282B1 (ko) * | 2021-02-04 | 2024-03-22 | 주식회사 엘지화학 | 폴리이미드 수지 및 이를 포함하는 포지티브형 감광성 수지 조성물 |
CN115128898B (zh) * | 2021-03-25 | 2024-06-11 | 北京鼎材科技有限公司 | 一种感光树脂组合物及其应用 |
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- 2011-01-19 WO PCT/JP2011/000250 patent/WO2011089894A1/ja active Application Filing
- 2011-01-19 KR KR1020127018650A patent/KR101452604B1/ko active IP Right Grant
- 2011-01-20 TW TW100102038A patent/TWI414888B/zh active
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TWI624730B (zh) * | 2012-02-27 | 2018-05-21 | Tokyo Ohka Kogyo Co Ltd | 正型光阻組成物、光阻層合體、光阻圖型之製造方法、及連接用端子之製造方法 |
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KR20120102123A (ko) | 2012-09-17 |
TW201135357A (en) | 2011-10-16 |
CN102713756A (zh) | 2012-10-03 |
JPWO2011089894A1 (ja) | 2013-05-23 |
KR101452604B1 (ko) | 2014-10-22 |
JP5146610B2 (ja) | 2013-02-20 |
CN102713756B (zh) | 2014-10-15 |
TWI414888B (zh) | 2013-11-11 |
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