WO2011070887A1 - Field effect transistor - Google Patents
Field effect transistor Download PDFInfo
- Publication number
- WO2011070887A1 WO2011070887A1 PCT/JP2010/070063 JP2010070063W WO2011070887A1 WO 2011070887 A1 WO2011070887 A1 WO 2011070887A1 JP 2010070063 W JP2010070063 W JP 2010070063W WO 2011070887 A1 WO2011070887 A1 WO 2011070887A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- oxide semiconductor
- field effect
- effect transistor
- semiconductor film
- film
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 103
- 239000004065 semiconductor Substances 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 43
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 230000005355 Hall effect Effects 0.000 claims description 6
- 108091006149 Electron carriers Proteins 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 45
- 229910007541 Zn O Inorganic materials 0.000 abstract description 18
- 239000000463 material Substances 0.000 abstract description 13
- 239000012299 nitrogen atmosphere Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- -1 hydrogen compound Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Definitions
- the present invention relates to a field effect transistor including an oxide semiconductor.
- an oxide semiconductor has attracted attention as a novel semiconductor material having high mobility, which is an advantage of poiysilicon, and a uniform element characteristic, which is an advantage of amorphous silicon.
- Patent Document 1 a field effect transistor which includes, as an oxide semiconductor, an oxide including indium (In), zinc (Zn), and gallium (Ga) (a material having an In-Ga-Zn-O composition) has been proposed.
- Patent Document 1 Japanese Published Patent Application No. 2006-173580
- a material having an In-Ga-Zn-0 composition includes an expensive raw material and thus has a problem of high cost.
- An oxide including indium (In), silicon (Si), and zinc (Zn) (a material having an In-Si-Zn-O composition) is used as an oxide semiconductor material.
- the content of Si in the oxide semiconductor film is greater than or equal to 4 mol% and less than or equal to 8 mol%.
- An embodiment of the present invention is a field effect transistor including a gate electrode, a gate insulating film, an oxide semiconductor film, a source electrode, and a drain electrode.
- the oxide semiconductor film is an oxide including indium, silicon, and zinc, and the content of silicon in the oxide semiconductor film is greater than or equal to 4 mol% and less than or equal to 8 mol%.
- FIG. 1 is a cross-sectional schematic view of a field effect transistor including an oxide semiconductor
- FIG. 2 is a graph showing results of comparison between the Si content in an
- FIG. 3 is a graph showing results of measuring an In-Si-Zn-O film by an X-ray diffraction (XRD) analysis method
- FIG. 4 is a graph showing dependence of Hall effect mobility of an In-Si-Zn-O film on the Si content in the film;
- FIG. 7 is a graph showing initial characteristics of a field effect transistor ([1]
- FIG. 16 is a graph showing initial characteristics of a field effect transistor ([4]
- FIGS. 25A to 25D illustrate a manufacturing process of the field effect transistor illustrated in FIG. 1 ;
- FIGS. 26A to 26D illustrate the manufacturing process of the field effect transistor illustrated in FIG. 1.
- FIG. 1 is a cross-sectional schematic view of a field effect transistor including an oxide semiconductor.
- the field effect transistor includes a substrate 10, a base insulating film 20, a gate electrode 30, a gate insulating film 40, an oxide semiconductor film 50, and a metal film 60.
- the oxide semiconductor film 50 is an In-Si-Zn-0 film.
- the field effect transistor illustrated in FIG 1 has a channel-etched bottom-gate structure. Note that the structure of the field effect transistor is not limited thereto, and can be a desired top-gate or bottom-gate structure.
- a glass substrate is used as the substrate 10.
- a glass substrate whose strain point is 730 °C or higher is preferably used.
- a glass substrate which includes more barium oxide (BaO) than boron oxide (B 2 C>3) is preferably used.
- a substrate formed using an insulator such as a ceramic substrate, a quartz glass substrate, a quartz substrate, or a sapphire substrate may also be used as the substrate 10 instead of the glass substrate.
- a crystallized glass substrate or the like can be used as the substrate 10.
- the base insulating film 20 has a function of preventing diffusion of an impurity element from the substrate 10.
- the base insulating film 20 can be formed using one or more films selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and a silicon nitride oxide film.
- the base insulating film 20 does not need to be provided. That is, the gate electrode 30 may be formed over the substrate 10 having an insulating surface.
- a metal conductive film can be used as the gate electrode 30.
- a material of the metal conductive film an element selected from aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), and tungsten (W); an alloy including any of these elements as a component; or the like can be used.
- a three-layer structure of a titanium film, an aluminum film, and a titanium film; a three-layer structure of a molybdenum film, an aluminum film, and a molybdenum film; or the like can be employed.
- the metal conductive film is not limited to a three-layer structure, and may have a single-layer structure, a two-layer structure, or a stacked structure of four or more layers.
- the gate insulating film 40 is in contact with the oxide semiconductor film 50 and thus is preferably a dense film with high withstand voltage. Therefore, it is particularly preferable that the gate insulating film 40 be formed by a high-density plasma CVD method using a microwave (2.45 GHz). This is for reduction of plasma damage in the formation of the gate insulating film 40. As a result, defects generated in the gate insulating film 40 can be reduced, and the condition of an interface with the oxide semiconductor film 50 formed later can be favorable.
- a dangling bond generated when a bond between an impurity and a main component of the oxide semiconductor is cut causes a shift in threshold voltage in a bias-temperature (BT) test, which is a typical test for evaluating reliability of a field effect transistor.
- BT bias-temperature
- the gate insulating film 40 include impurities such as moisture and hydrogen as little as possible.
- the gate insulating film 40 can be formed using a film of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, hafnium oxide, or the like.
- the oxide semiconductor film 50 is the In-Si-Zn-0 film as described above, and the Si content in the film is greater than or equal to 4 mol% and less than or equal to 8 mol%.
- Impurities such as hydrogen, moisture, a hydroxyl group, and hydroxide also referred to as a hydrogen compound
- oxygen which is simultaneously reduced in the step of removing these impurities is supplied to the oxide semiconductor film 50.
- the oxide semiconductor film 50 is purified and becomes electrically i-type (intrinsic). The purpose of this treatment is to suppress fluctuation in electric characteristics of the field effect transistor.
- the concentration of hydrogen included in the oxide semiconductor film 50 is preferably 5 x 10 19 atoms/cm 3 or lower, more preferably 5 x 10 18 atoms/cm 3 or lower, still more preferably 5 x 10 17 atoms/cm 3 or lower, further more preferably lower than 5 x 10 16 atoms/cm 3 .
- the concentration of hydrogen can be measured by secondary ion mass spectrometry (SIMS).
- the density of minority carriers is low and the minority carriers are less likely to be induced.
- tunnel current is difficult to be generated; consequently, off-state current is difficult to flow.
- the field effect transistor including the oxide semiconductor film 50 has resistance to hot carrier deterioration. This is because hot carrier deterioration is mainly caused by increase in the number of carriers due to avalanche breakdown and by injection of the carriers accelerated to high speed to the gate insulating film.
- the metal film 60 is used as a source electrode or a drain electrode.
- a metal material such as aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), or tungsten (W); or an alloy material including any of these metal materials as a component can be used.
- the metal film 60 may have a structure in which a film of refractory metal such as chromium (Cr), tantalum (Ta), titanium (Ti), molybdenum (Mo), or tungsten (W) is stacked on one side or both sides of a metal film of aluminum (Al), copper (Cu), or the like.
- an aluminum material to which an element that prevents generation of hillocks or whiskers in an aluminum film such as silicon (Si), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), neodymium (Nd), scandium (Sc), or yttrium (Y), is added is used, whereby the metal film 60 with high heat resistance can be obtained.
- FIG. 1 A manufacturing process of a field effect transistor having the structure illustrated in FIG. 1 will be described with reference to FIGS. 25A to 25D and FIGS. 26A to 26D.
- the base insulating film 20 is formed over the substrate 10.
- a conductive film 35 is formed over the base insulating film 20.
- the gate electrode 30 is formed in a first photolithography process.
- the gate insulating film 40 is formed over the gate electrode 30.
- an oxide semiconductor film 55 is formed over the gate insulating film 40.
- the oxide semiconductor film 55 is etched so that the oxide semiconductor film 50 is formed.
- a metal film 65 is formed over the oxide semiconductor film 50.
- the metal film 65 is etched so that the metal film 60 is formed.
- the field effect transistor illustrated in FIG. 1 is obtained through the above steps.
- a resist mask used in the first photolithography process may be formed by an inkjet method.
- the resist mask is formed by an inkjet method, a photomask is not used; therefore, manufacturing cost can be reduced.
- the gate insulating film 40 is formed by a sputtering method, for example. It is preferable that, as pretreatment performed before the film formation, the substrate 10 provided with the gate electrode 30 be preheated in a preheating chamber of a sputtering apparatus so that impurities such as hydrogen and moisture adsorbed to the substrate 10 may be removed and eliminated.
- the purpose of this preheating is to prevent the impurities such as hydrogen and moisture from being included in the gate insulating film 40 and the oxide semiconductor film 50 which are formed later as much as possible
- the substrate 10 over which films up to the gate insulating film 40 are formed may be preheated.
- the appropriate temperature of the preheating is higher than or equal to 100 °C and lower than or equal to 400 °C.
- a temperature of higher than or equal to 150 °C and lower than or equal to 300 °C is more preferable.
- a cryopump is preferably used as an evacuation unit in the preheating chamber.
- the oxide semiconductor film 55 is formed by a sputtering method.
- the substrate 10 Before the oxide semiconductor film 55 is formed, the substrate 10 is held in a treatment chamber in a reduced pressure state, and the substrate 10 is heated to a temperature of higher than or equal to room temperature and lower than 400 °C. Then, while a sputtering gas from which hydrogen and moisture are removed is introduced in the state where moisture remaining in the treatment chamber is removed, voltage is applied between the substrate 10 and a target, so that the oxide semiconductor film 55 is formed over the substrate 10.
- an entrapment vacuum pump is used as the evacuation unit for removing moisture remaining in the treatment chamber.
- a cryopump, an ion pump, and a titanium sublimation pump can be given.
- a turbo pump provided with a cold trap can be used as the evacuation unit.
- a compound including a hydrogen atom such as water (H 2 0), or the like (more preferably, also a compound including a carbon atom) is eliminated; thus, the concentration of impurities included in the oxide semiconductor film 55 which is formed in the treatment chamber can be reduced.
- the temperature of the substrate 10 at the time of forming the oxide semiconductor film 55 can be set higher than or equal to room temperature and lower than 400 °C.
- the reverse sputtering refers to a method in which a substrate surface is cleaned with reactive plasma generated by voltage application to the substrate side using an RF power source without voltage application to a target side. Note that the reverse sputtering is performed in an argon atmosphere. Alternatively, nitrogen, helium, oxygen, or the like may be used instead of argon.
- heat treatment for dehydration or dehydrogenation of the oxide semiconductor film 50 is performed. It is appropriate that the heat treatment for dehydration or dehydrogenation is performed at a temperature of higher than or equal to 350 °C and lower than or equal to 750 °C.
- the heat treatment for dehydration or dehydrogenation is performed in a nitrogen atmosphere by putting the substrate 10 provided with the oxide semiconductor film 50 in an electric furnace which is a kind of heat treatment apparatus.
- a high-purity oxygen gas, a high-purity dinitrogen monoxide (N 2 0) gas, or ultra-dry air (a gas in which nitrogen and oxygen are mixed at a ratio of 4: 1 and which has a dew point of -40 °C or lower, preferably -60 °C or lower) is introduced into the same furnace and cooling is performed.
- a high-purity oxygen gas, a high-purity dinitrogen monoxide (N 2 0) gas, or ultra-dry air a gas in which nitrogen and oxygen are mixed at a ratio of 4: 1 and which has a dew point of -40 °C or lower, preferably -60 °C or lower
- water, hydrogen, and the like be not included in the oxygen gas or the N 2 0 gas.
- the purity of an oxygen gas or an N 2 0 gas is 6N (99.9999 %) or higher, preferably 7N (99.99999 %) or higher (i.e., the concentration of impurities in the oxygen gas or the N 2 0 gas is 1 ppm or lower, more preferably 0.1 ppm or lower).
- the heat treatment apparatus is not limited to the electric furnace; for example, a rapid thermal anneal (RTA) apparatus such as a gas rapid thermal anneal (GRTA) apparatus or a lamp rapid thermal anneal (LRTA) apparatus can be used.
- RTA rapid thermal anneal
- GRTA gas rapid thermal anneal
- LRTA lamp rapid thermal anneal
- heat treatment for dehydration or dehydrogenation may be performed after the formation step of the oxide semiconductor film illustrated in FIG 26 A.
- In-Si-Zn-O films Four kinds of In-Si-Zn-O films were formed using targets having different compositions, and characteristics of the In-Si-Zn-O films were compared.
- the compositions of the targets are the following [1 ] to [4]:
- FIG 2 is a graph showing results of comparison between the Si content in an In-Si-Zn-O target and the Si content in an In-Si-Zn-O film.
- the horizontal axis represents the Si content (mol%) in the target
- the vertical axis represents the Si content (mol%) in the film. This graph shows that the Si content in the target is substantially equal to the Si content in the film.
- the Si content in the target shown in the graph of FIG. 2 was obtained by calculation.
- the Si content in the film was measured by Rutherford backscattering spectrometry (RBS).
- FIG. 3 is a graph showing results of measuring an In-Si-Zn-O film by an X-ray diffraction (XRD) analysis method.
- the horizontal axis represents the irradiation angle of an X ray
- the vertical axis represents the intensity of a peak.
- This graph shows that as the Si content in the film is increased, the intensity of a broad peak at 30 deg. to 35 deg. due to In-Zn-O is weakened.
- FIG. 4 is a graph showing dependence of Hall effect mobility of an In-Si-Zn-O film on the Si content in the film.
- the horizontal axis represents the Si content in the film
- the left vertical axis represents the Hall effect mobility
- the right vertical axis represents the carrier density.
- This graph shows that as the Si content in the film is increased, the Hall effect mobility (indicated by a circle in the graph) and the carrier density (indicated by a cross in the graph) are decreased.
- the graph of FIG. 4 shows the following results: when the Si content is 4 mol%, the carrier density is lower than or equal to 1 x 10 20 /cm 3 ; similarly, when the Si content is 4 moI%, the Hall effect mobility is lower than or equal to 20 cm 2 /Vs.
- a sample used in the measurement for obtaining the results shown in the graphs of FIG. 3 and FIG. 4 is a 150-nm-thick In-Si-Zn-O film which has been subjected to heat treatment at 450 °C for 1 hour in an N 2 atmosphere.
- FIG. 5, FIG. 6, FIG. 7, FIG 8, FIG. 9, FIG. 10, FIG. 1 1 , FIG. 12, FIG. 13, FIG. 14, FIG. 1 5, and FIG. 16 are graphs showing h-V g characteristics [ ⁇ og(h)-V % ] of the field effect transistor illustrated in FIG. 1.
- the horizontal axis represents the level of gate voltage V g [V]
- the left vertical axis represents the amount of drain current h [A] (indicated by a solid line in the graphs)
- the right vertical axis represents the field effect mobility ⁇ [cm 2 /Vs] (indicated by a dashed line in the graphs).
- the h- V g characteristics were measured under the condition that the level of drain voltage [V] was 1 V or 10 V and a gate voltage V g [V] of -30 V to 30 V was applied.
- SiON film was used as the gate insulating film 40 and a 100-nm-thick Ti film was used as the metal film 60.
- the thickness of the oxide semiconductor film 50 was 20 nm
- the channel length L was 10 ⁇
- the channel width W was 50 ⁇ .
- the field effect transistor of FIG. 5 was subjected to heat treatment at 350 °C for 1 hour in an N 2 atmosphere.
- the field effect transistor of FIG 6 was subjected to heat treatment at 450 °C for 1 hour in an N 2 atmosphere.
- FIG 5 and FIG. 6 show that the off-state current of each of these field effect transistors is 1 x 1 CT 13 A or less, the on-state current thereof is 1 x 10 ⁇ 5 A or more, and the on/off ratio thereof is 10 8 or more; thus, excellent switching characteristics are obtained. Further, the field effect mobility ⁇ reaches 45 cmVVs.
- FIG. 7 shows that the field effect transistor does not have a sufficient on/off ratio. Further, the field effect transistor is normally on.
- the field effect transistor of FIG. 8 was subjected to heat treatment at 350 °C for 1 hour in an N 2 atmosphere.
- the field effect transistor of FIG. 9 was subjected to heat treatment at 450 °C for 1 hour in an N 2 atmosphere.
- FIG 8 and FIG. 9 show that the off-state current of each of these field effect transistors is 1 x l O -13 A or less, the on-state current thereof is 1 x l O -5 A or more, and the on/off ratio thereof is 10 or more; thus, excellent switching characteristics are obtained. Further, the field effect mobility ⁇ reaches 22 cm /Vs.
- FIG. 10 shows that the field effect transistor does not have a sufficient on/off ratio. Further, the field effect transistor is normally on.
- the field effect transistor of FIG. 1 1 was subjected to heat treatment at 350 °C for 1 hour in an N 2 atmosphere.
- the field effect transistor of FIG. 12 was subjected to heat treatment at 450 °C for 1 hour in an N 2 atmosphere.
- FIG. 1 1 , FIG. 12, and FIG. 13 show that the off-state current of each of these field effect transistors is 1 x 10 ⁇ 13 A or less, the on-state current thereof is 1 ⁇ 10 ⁇ 5 A or more, and the on/off ratio thereof is 10 8 or more; thus, excellent switching characteristics are obtained. Further, the field effect mobility ⁇ reaches 10 cm 2 /Vs.
- the field effect transistor of FIG. 14 was subjected to heat treatment at 350 °C for 1 hour in an N 2 atmosphere.
- the field effect transistor of FIG. 15 was subjected to heat treatment at 450 °C for 1 hour in an N 2 atmosphere.
- FIG. 14, FIG. 15, and FIG. 16 show that the off-state current of each of these field effect transistors is 1 ⁇ 10 -13 A or less, the on-state current thereof is 1 x 10 -6 A or more, and the on/off ratio thereof is 10 7 or more; thus, excellent switching characteristics are obtained.
- the field effect mobility ⁇ is very low.
- FIG. 17, FIG. 18, FIG. 19, FIG. 20, FIG. 21 , FIG. 22, FIG. 23, and FIG. 24 are graphs showing results of bias-temperature (BT) tests performed on the transistor illustrated in FIG. 1.
- the horizontal axis represents the level of gate voltage V % [V]
- the left vertical axis represents the amount of drain current Id [A] (in the graphs, a heavy solid line shows results before the test and a heavy dashed line shows results after the test)
- the right vertical axis represents the field effect mobility ⁇ [cm 2 /Vs] (in the graphs, a solid line shows results before the test and a dashed line shows results after the test).
- the field effect transistor used for the measurement was manufactured in the following manner.
- a 100-nm-thick Ti film was formed as the metal film 60, and then heat treatment was performed at 250 °C for 1 hour in an N 2 atmosphere.
- the channel length L of the field effect transistor was 20 ⁇ and the channel width W thereof was 20 ⁇ .
- the BT tests was performed under the condition that a gate voltage of 20 V (+BT) or a gate voltage of -20 V (-BT) was applied at 150 °C for 1 hour. Note that in the BT test, the level of drain voltage V d [V] was set at 1 V or 10 V.
- FIG. 17 shows results of a +BT test, and the amount of shift in the threshold voltage is 2.66 V.
- FIG. 18 shows results of a -BT test, and the amount of shift in the threshold voltage is -3.42 V.
- FIG. 19 shows results of a +BT test, and the amount of shift in the threshold voltage is 2.90 V.
- FIG. 20 shows results of a -BT test, and the amount of shift in the threshold voltage is -2.59 V.
- FIG. 21 shows results of a +BT test, and the amount of shift in the threshold voltage is 6.04 V.
- FIG. 22 shows results of a -BT test, and the amount of shift in the threshold voltage is -0.22 V.
- FIG. 23 shows results of a +BT test, and the amount of shift in the threshold voltage is 14.48 V.
- FIG. 24 shows results of a -BT test, and the amount of shift in the threshold voltage is -0.12 V.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177027892A KR20170116239A (ko) | 2009-12-11 | 2010-11-04 | 전계 효과 트랜지스터 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009281408 | 2009-12-11 | ||
JP2009-281408 | 2009-12-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011070887A1 true WO2011070887A1 (en) | 2011-06-16 |
Family
ID=44141910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/070063 WO2011070887A1 (en) | 2009-12-11 | 2010-11-04 | Field effect transistor |
Country Status (5)
Country | Link |
---|---|
US (2) | US8492759B2 (ja) |
JP (2) | JP5723584B2 (ja) |
KR (2) | KR20170116239A (ja) |
TW (1) | TWI500153B (ja) |
WO (1) | WO2011070887A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8698214B2 (en) | 2011-10-27 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8729613B2 (en) | 2011-10-14 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952380B2 (en) | 2011-10-27 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9029852B2 (en) | 2011-09-29 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9219160B2 (en) | 2011-09-29 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130040706A (ko) | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9246011B2 (en) | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2015097595A1 (en) | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2017222563A (ja) * | 2016-06-10 | 2017-12-21 | 株式会社半導体エネルギー研究所 | 金属酸化物 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007029844A1 (en) * | 2005-09-06 | 2007-03-15 | Canon Kabushiki Kaisha | Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film |
US20070194379A1 (en) * | 2004-03-12 | 2007-08-23 | Japan Science And Technology Agency | Amorphous Oxide And Thin Film Transistor |
WO2009031634A1 (en) * | 2007-09-05 | 2009-03-12 | Canon Kabushiki Kaisha | Field effect transistor |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69635107D1 (de) * | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) * | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) * | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) * | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US7061014B2 (en) * | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) * | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) * | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
TWI244211B (en) * | 2003-03-14 | 2005-11-21 | Innolux Display Corp | Thin film transistor and method of manufacturing the same and display apparatus using the transistor |
JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7291967B2 (en) * | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
US7492090B2 (en) * | 2003-09-19 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7872259B2 (en) * | 2004-11-10 | 2011-01-18 | Canon Kabushiki Kaisha | Light-emitting device |
CA2585071A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
AU2005302962B2 (en) * | 2004-11-10 | 2009-05-07 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI445178B (zh) * | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI505473B (zh) * | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) * | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) * | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) * | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) * | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4280736B2 (ja) * | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) * | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) * | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) * | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) * | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) * | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) * | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) * | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) * | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
KR100982395B1 (ko) * | 2007-04-25 | 2010-09-14 | 주식회사 엘지화학 | 박막 트랜지스터 및 이의 제조방법 |
US8274078B2 (en) * | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US7910932B2 (en) * | 2007-06-01 | 2011-03-22 | Northwestern University | Transparent nanowire transistors and methods for fabricating same |
JP2009128503A (ja) * | 2007-11-21 | 2009-06-11 | Canon Inc | 薄膜トランジスタ回路とその駆動方法、ならびに発光表示装置 |
WO2009075281A1 (ja) | 2007-12-13 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
US8202365B2 (en) * | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP5372776B2 (ja) * | 2007-12-25 | 2013-12-18 | 出光興産株式会社 | 酸化物半導体電界効果型トランジスタ及びその製造方法 |
WO2009093625A1 (ja) * | 2008-01-23 | 2009-07-30 | Idemitsu Kosan Co., Ltd. | 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置 |
US8586979B2 (en) * | 2008-02-01 | 2013-11-19 | Samsung Electronics Co., Ltd. | Oxide semiconductor transistor and method of manufacturing the same |
JP4623179B2 (ja) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
-
2010
- 2010-11-04 WO PCT/JP2010/070063 patent/WO2011070887A1/en active Application Filing
- 2010-11-04 KR KR1020177027892A patent/KR20170116239A/ko not_active Application Discontinuation
- 2010-11-04 KR KR1020127017572A patent/KR20120102748A/ko not_active Application Discontinuation
- 2010-11-26 TW TW099141021A patent/TWI500153B/zh active
- 2010-12-06 US US12/960,636 patent/US8492759B2/en active Active
- 2010-12-09 JP JP2010274254A patent/JP5723584B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-08 US US13/936,257 patent/US8704222B2/en not_active Ceased
-
2015
- 2015-03-30 JP JP2015069653A patent/JP5927316B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070194379A1 (en) * | 2004-03-12 | 2007-08-23 | Japan Science And Technology Agency | Amorphous Oxide And Thin Film Transistor |
WO2007029844A1 (en) * | 2005-09-06 | 2007-03-15 | Canon Kabushiki Kaisha | Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film |
WO2009031634A1 (en) * | 2007-09-05 | 2009-03-12 | Canon Kabushiki Kaisha | Field effect transistor |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9219160B2 (en) | 2011-09-29 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10290744B2 (en) | 2011-09-29 | 2019-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11791415B2 (en) | 2011-09-29 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9029852B2 (en) | 2011-09-29 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217701B2 (en) | 2011-09-29 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10622485B2 (en) | 2011-09-29 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9741860B2 (en) | 2011-09-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9680028B2 (en) | 2011-10-14 | 2017-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8729613B2 (en) | 2011-10-14 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9087908B2 (en) | 2011-10-14 | 2015-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8698214B2 (en) | 2011-10-27 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9530895B2 (en) | 2011-10-27 | 2016-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9105734B2 (en) | 2011-10-27 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952380B2 (en) | 2011-10-27 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
Also Published As
Publication number | Publication date |
---|---|
US20130292670A1 (en) | 2013-11-07 |
JP2015164196A (ja) | 2015-09-10 |
US8492759B2 (en) | 2013-07-23 |
KR20170116239A (ko) | 2017-10-18 |
JP2011142315A (ja) | 2011-07-21 |
TW201140826A (en) | 2011-11-16 |
JP5927316B2 (ja) | 2016-06-01 |
US8704222B2 (en) | 2014-04-22 |
JP5723584B2 (ja) | 2015-05-27 |
US20110140098A1 (en) | 2011-06-16 |
KR20120102748A (ko) | 2012-09-18 |
TWI500153B (zh) | 2015-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8704222B2 (en) | Field effect transistor | |
US11715800B2 (en) | Semiconductor device, power diode, and rectifier | |
JP5839554B2 (ja) | 半導体装置 | |
US8936965B2 (en) | Semiconductor device and manufacturing method thereof | |
KR101824124B1 (ko) | 반도체 장치 및 그 제작 방법 | |
KR102273623B1 (ko) | 반도체 장치 및 그 제작방법 | |
KR101800852B1 (ko) | 반도체 장치 | |
JP6611866B2 (ja) | 半導体装置 | |
WO2014034872A1 (ja) | 薄膜トランジスタおよび表示装置 | |
JP2017201711A (ja) | 半導体装置 | |
US8853697B2 (en) | Semiconductor device | |
JP5657878B2 (ja) | トランジスタの作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10835809 Country of ref document: EP Kind code of ref document: A1 |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10835809 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20127017572 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10835809 Country of ref document: EP Kind code of ref document: A1 |