WO2011037388A3 - 그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체 및 그 제조방법 - Google Patents

그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체 및 그 제조방법 Download PDF

Info

Publication number
WO2011037388A3
WO2011037388A3 PCT/KR2010/006461 KR2010006461W WO2011037388A3 WO 2011037388 A3 WO2011037388 A3 WO 2011037388A3 KR 2010006461 W KR2010006461 W KR 2010006461W WO 2011037388 A3 WO2011037388 A3 WO 2011037388A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanomaterials
dimensional
nanostructure
stacked
graphene
Prior art date
Application number
PCT/KR2010/006461
Other languages
English (en)
French (fr)
Other versions
WO2011037388A2 (ko
Inventor
김상욱
이원종
이덕현
한태희
김지은
이진아
이건재
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Priority to US13/322,385 priority Critical patent/US8808860B2/en
Publication of WO2011037388A2 publication Critical patent/WO2011037388A2/ko
Publication of WO2011037388A3 publication Critical patent/WO2011037388A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

본 발명은 그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체에 관한 것으로, 보다 상세하게는, 환원된 그래핀 필름 상에 나노튜브(nanotube), 나노선(nanowire), 나노로드(nanorod), 나노니들(nanoneedle) 및 나노입자(nanoparticle) 중 어느 하나이상의 나노물질이 성장되어 있는 3차원 나노구조체 및 그 제조방법에 관한 것이다. 본 발명은 1차원의 나노물질과 2차원의 그래핀을 혼성시킨 3차원 나노구조체를 제조하여 이들의 시너지 효과를 얻을 수 있게 한다. 본 발명에 따른 나노구조체는 유연성과 신축성이 우수하며, 비평면적인 표면을 포함하는 어느 기판에도 쉽게 옮겨낼 수 있고, 나노물질, 금속촉매, 그래핀 필름 시스템 내의 모든 접합이 오믹 전기 접합(ohmic electrical contact)을 이루어져 전계 방출 디바이스(Field-emitting device)에 쉽게 통합될 수 있어 유용하다.
PCT/KR2010/006461 2009-09-24 2010-09-20 그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체 및 그 제조방법 WO2011037388A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/322,385 US8808860B2 (en) 2009-09-24 2010-09-20 3-dimensional nanostructure having nanomaterials stacked on graphene substrate and fabrication method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0090634 2009-09-24
KR20090090634 2009-09-24

Publications (2)

Publication Number Publication Date
WO2011037388A2 WO2011037388A2 (ko) 2011-03-31
WO2011037388A3 true WO2011037388A3 (ko) 2011-09-09

Family

ID=43796374

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006461 WO2011037388A2 (ko) 2009-09-24 2010-09-20 그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체 및 그 제조방법

Country Status (3)

Country Link
US (1) US8808860B2 (ko)
KR (1) KR101400686B1 (ko)
WO (1) WO2011037388A2 (ko)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8810996B2 (en) 2010-11-22 2014-08-19 The Trustees Of The Stevens Institute Of Technology Inkjet-printed flexible electronic components from graphene oxide
EP2500091A1 (fr) 2011-03-18 2012-09-19 Nanocyl S.A. Composition catalytique pour la synthese de nanotubes de carbone
DE112011100116T5 (de) * 2011-09-16 2013-12-24 Empire Technology Development Llc Graphendefekt-Umbildung
US9011968B2 (en) 2011-09-16 2015-04-21 Empire Technology Development Llc Alteration of graphene defects
KR101830782B1 (ko) 2011-09-22 2018-04-05 삼성전자주식회사 그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터
KR101346321B1 (ko) 2011-10-19 2013-12-31 한국과학기술원 그래핀-탄소나노튜브 나노 구조체 및 그 제조 방법
KR102059700B1 (ko) * 2011-11-18 2019-12-26 윌리엄 마쉬 라이스 유니버시티 그래핀-탄소 나노튜브 하이브리드 물질 및 전극으로서의 용도
US9177688B2 (en) 2011-11-22 2015-11-03 International Business Machines Corporation Carbon nanotube-graphene hybrid transparent conductor and field effect transistor
KR20130069035A (ko) 2011-12-16 2013-06-26 삼성전자주식회사 그래핀상의 하이브리드 나노구조체 형성 방법
CN103288033B (zh) * 2012-02-23 2016-02-17 清华大学 碳纳米管微尖结构的制备方法
US10483104B2 (en) * 2012-03-30 2019-11-19 Kabushiki Kaisha Toshiba Method for producing stacked electrode and method for producing photoelectric conversion device
CN102642807B (zh) * 2012-05-09 2014-11-26 中国科学院合肥物质科学研究院 有序硅纳米线阵列的制备方法
KR101356010B1 (ko) * 2012-06-11 2014-01-28 한국과학기술원 2차원 전사층 및 블록공중합체를 이용한 나노구조체 제조방법, 이에 의하여 제조된 나노구조체 및 그 응용소자
KR101920718B1 (ko) 2012-07-27 2018-11-21 삼성전자주식회사 그래핀 소자 제조 장치 및 이를 이용한 그래핀 소자 제조 방법
US9738526B2 (en) 2012-09-06 2017-08-22 The Trustees Of The Stevens Institute Of Technology Popcorn-like growth of graphene-carbon nanotube multi-stack hybrid three-dimensional architecture for energy storage devices
US9178129B2 (en) 2012-10-15 2015-11-03 The Trustees Of The Stevens Institute Of Technology Graphene-based films in sensor applications
KR101984696B1 (ko) * 2012-10-23 2019-05-31 삼성전자주식회사 나노와이어-그래핀 구조체, 이를 포함한 소자 및 그 제조 방법
US10287677B2 (en) * 2012-11-19 2019-05-14 The Regents Of The University Of California Methods of fabricating pillared graphene nanostructures
KR101349633B1 (ko) * 2012-11-30 2014-02-25 한국과학기술연구원 그래핀 외장에 삽입된 다이아몬드 나노플레이크를 포함하는 다상 탄소 나노구조물 및 이의 제조 방법
KR101920724B1 (ko) 2012-12-11 2018-11-21 삼성전자주식회사 그래핀을 포함하는 전자 소자
TW201428787A (zh) * 2012-12-19 2014-07-16 Basf Se 以石墨烯爲基之平面內超電容器
US20140205841A1 (en) 2013-01-18 2014-07-24 Hongwei Qiu Granules of graphene oxide by spray drying
CN103101877B (zh) * 2013-01-28 2016-04-27 北京大学 一种基于有序纳米线阵列的气敏元件制备方法
KR102059130B1 (ko) 2013-02-14 2019-12-24 삼성전자주식회사 나노구조체와 이를 포함하는 광학소자 및 이들의 제조방법
US9573814B2 (en) 2013-02-20 2017-02-21 The Trustees Of The Stevens Institute Of Technology High-throughput graphene printing and selective transfer using a localized laser heating technique
CN103337449B (zh) * 2013-04-28 2016-01-06 中国科学院合肥物质科学研究院 硅纳米线阵列的移植及其简单器件制备的方法
US9153389B2 (en) * 2013-06-27 2015-10-06 National Taiwan University Of Science And Technology Carbon nanotube-graphene composite, method of forming the same, and electronic device
WO2015069227A1 (en) * 2013-11-05 2015-05-14 The Regents Of The University Of California Metal-oxide anchored graphene and carbon-nanotube hybrid foam
US10166571B2 (en) * 2013-12-10 2019-01-01 Lg Display Co., Ltd. Refining method for microstructure
KR101676641B1 (ko) * 2014-03-31 2016-11-17 한국과학기술원 블록공중합체 나노템플레이트를 이용한 탄소섬유직물/탄소나노튜브 구조전지 전극의 제조 방법
KR101682501B1 (ko) * 2014-07-04 2016-12-05 국민대학교산학협력단 은 나노와이어 패턴층 및 그래핀층을 포함하는 투명전극 및 그 제조방법
CN104851787A (zh) * 2015-04-01 2015-08-19 中国科学院上海微系统与信息技术研究所 一种提高金属电极与石墨烯欧姆接触的方法
KR101754783B1 (ko) 2015-06-11 2017-07-07 서울대학교산학협력단 나노로드 전사방법
US11330984B2 (en) 2015-06-19 2022-05-17 The Trustees Of The Stevens Institute Of Technology Wearable graphene sensors
CN105063556B (zh) * 2015-07-17 2018-09-25 中国科学院合肥物质科学研究院 一种在石墨烯上制备纳米金属颗粒阵列的制备方法
US9927706B2 (en) * 2015-07-20 2018-03-27 The University Of Chicago Atomic layer chemical patterns for block copolymer assembly
CN106882926B (zh) * 2015-12-15 2019-02-26 中国科学院上海硅酸盐研究所 制备石墨烯透明导电薄膜的方法
CN106449133B (zh) * 2016-10-08 2020-03-31 全普半导体科技(深圳)有限公司 单层石墨烯薄膜基复合结构、制备方法及半导体器件
CN111757845B (zh) * 2018-01-12 2023-10-27 洛桑联邦理工学院 储氢材料
CN110127620B (zh) * 2019-05-11 2022-09-16 复旦大学 金属氧化物有序交叉纳米线阵列及其制备方法
AU2020419333A1 (en) * 2020-01-03 2022-07-21 Nanotech Energy, Inc. Electromagnetic interference shielding materials, devices, and methods of manufacture thereof
CN111138627B (zh) * 2020-01-09 2022-04-22 新疆亿元达光电科技有限公司 氧化石墨烯/碳纳米管高强度聚氨酯保温板及其制备方法
FR3107989A1 (fr) * 2020-03-05 2021-09-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur de motif thermique dont la couche de protection surfacique presente une conduction thermique anisotrope
CN113213454B (zh) * 2021-04-21 2022-06-24 温州大学 以石墨烯为催化剂制备单壁碳纳米管的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080012009A (ko) * 2006-08-02 2008-02-11 삼성전자주식회사 탄소 나노 튜브의 형성 방법
KR20080103812A (ko) * 2007-05-25 2008-11-28 한국과학기술원 유기단분자층 및 블록공중합체를 포함하는 나노구조체 및그 제조방법
KR20090019856A (ko) * 2006-05-29 2009-02-25 가부시키가이샤 알박 카본 나노 튜브 성장용 기판, 카본 나노 튜브 성장 방법, 카본 나노 튜브 성장용 촉매의 입경 제어 방법, 및 카본 나노 튜브 직경의 제어 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844510B1 (fr) * 2002-09-12 2006-06-16 Snecma Propulsion Solide Structure fibreuse tridimensionnelle en fibres refractaires, procede pour sa realisation et application aux materiaux composites thermostructuraux
US7449133B2 (en) * 2006-06-13 2008-11-11 Unidym, Inc. Graphene film as transparent and electrically conducting material
KR101435999B1 (ko) * 2007-12-07 2014-08-29 삼성전자주식회사 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극
KR101071906B1 (ko) 2008-11-14 2011-10-11 한국과학기술원 단결정 게르마늄코발트 나노와이어, 게르마늄코발트 나노와이어 구조체, 및 이들의 제조방법
KR101081299B1 (ko) 2009-08-03 2011-11-08 인제대학교 산학협력단 신규한 구조의 탄소계 나노복합체 및 이의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090019856A (ko) * 2006-05-29 2009-02-25 가부시키가이샤 알박 카본 나노 튜브 성장용 기판, 카본 나노 튜브 성장 방법, 카본 나노 튜브 성장용 촉매의 입경 제어 방법, 및 카본 나노 튜브 직경의 제어 방법
KR20080012009A (ko) * 2006-08-02 2008-02-11 삼성전자주식회사 탄소 나노 튜브의 형성 방법
KR20080103812A (ko) * 2007-05-25 2008-11-28 한국과학기술원 유기단분자층 및 블록공중합체를 포함하는 나노구조체 및그 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NAGATSU, MASAAKI ET AL.: "Narrow multi-walled carbon nanotubes produced by chemical vapor deposition using graphene layer encapsulated catalytic metal particles.", CARBON., vol. 44, 2006, pages 3336 - 3341 *

Also Published As

Publication number Publication date
US20120121891A1 (en) 2012-05-17
US8808860B2 (en) 2014-08-19
WO2011037388A2 (ko) 2011-03-31
KR101400686B1 (ko) 2014-05-29
KR20110032999A (ko) 2011-03-30

Similar Documents

Publication Publication Date Title
WO2011037388A3 (ko) 그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체 및 그 제조방법
EP2011572A3 (en) Method for forming catalyst nanoparticles for growing elongated nanostructures
Sun et al. First-principles study of the alkali earth metal atoms adsorption on graphene
MY167410A (en) A nanowire device having graphene top and bottom electrodes and method of making such a device
Biroju et al. Graphene-assisted controlled growth of highly aligned ZnO nanorods and nanoribbons: growth mechanism and photoluminescence properties
EP2458620A3 (en) Fabrication of graphene electronic devices using step surface contour
EP4044213A3 (en) Semiconductor device and method for manufacturing same
JP2016507801A5 (ko)
WO2012061514A8 (en) Grid and nanostructure transparent conductor for low sheet resistance applications
WO2006068654A3 (en) Systems and methods for nanowire growth and manufacturing
EP2423951A3 (en) Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof
EP2219250A3 (en) Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode
EP2626905A3 (en) Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
GB201318578D0 (en) Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates
WO2012047068A3 (ko) 발광소자 및 그 제조방법
EP4293707A3 (en) Direct and sequential formation of monolayers of boron nitride and graphene on substrates
JP2013038073A5 (ja) 蓄電装置の電極及びその作製方法
WO2012078273A3 (en) Nanowire preparation methods, compositions, and articles
JP2012134468A5 (ja) 半導体膜、半導体素子、及び半導体装置
CN104046359B8 (zh) 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品
EP2747147A3 (en) Systems and methods for OHMIC contacts in silicon carbide devices
EP2562814A3 (en) Light emitting device and light emitting device package
WO2012047069A3 (ko) 발광소자 및 그 제조방법
EP2399968A3 (en) Electroconductive pressure-sensitive adhesive tape
WO2012169858A3 (ko) 피가공체를 흡착하는 진공 척에 사용되는 완충시트

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10819029

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13322385

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10819029

Country of ref document: EP

Kind code of ref document: A2