WO2011013326A1 - 液状樹脂組成物、およびそれを用いた半導体装置 - Google Patents
液状樹脂組成物、およびそれを用いた半導体装置 Download PDFInfo
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- WO2011013326A1 WO2011013326A1 PCT/JP2010/004648 JP2010004648W WO2011013326A1 WO 2011013326 A1 WO2011013326 A1 WO 2011013326A1 JP 2010004648 W JP2010004648 W JP 2010004648W WO 2011013326 A1 WO2011013326 A1 WO 2011013326A1
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- IPPWILKGXFOXHO-UHFFFAOYSA-N chloranilic acid Chemical compound OC1=C(Cl)C(=O)C(O)=C(Cl)C1=O IPPWILKGXFOXHO-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- LRBQNJMCXXYXIU-QWKBTXIPSA-N gallotannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@H]2[C@@H]([C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-QWKBTXIPSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- ZETYUTMSJWMKNQ-UHFFFAOYSA-N n,n',n'-trimethylhexane-1,6-diamine Chemical compound CNCCCCCCN(C)C ZETYUTMSJWMKNQ-UHFFFAOYSA-N 0.000 description 1
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- IFXORIIYQORRMJ-UHFFFAOYSA-N tribenzylphosphane Chemical compound C=1C=CC=CC=1CP(CC=1C=CC=CC=1)CC1=CC=CC=C1 IFXORIIYQORRMJ-UHFFFAOYSA-N 0.000 description 1
- VLCLHFYFMCKBRP-UHFFFAOYSA-N tricalcium;diborate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]B([O-])[O-].[O-]B([O-])[O-] VLCLHFYFMCKBRP-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- DMEUUKUNSVFYAA-UHFFFAOYSA-N trinaphthalen-1-ylphosphane Chemical compound C1=CC=C2C(P(C=3C4=CC=CC=C4C=CC=3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 DMEUUKUNSVFYAA-UHFFFAOYSA-N 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L21/00—Compositions of unspecified rubbers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L51/08—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds
- C08L51/085—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds on to polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Definitions
- the present invention relates to a liquid resin composition and a semiconductor device using the same.
- a semiconductor element (chip) and a substrate are electrically connected by solder bumps.
- a liquid resin composition called an underfill material is filled between a chip and a substrate in order to improve connection reliability, thereby reinforcing the periphery of the solder bump.
- Underfill materials are required to have further lower thermal expansion and lower elasticity.
- Patent Documents 1 and 2 So far, a method for solving the decrease in filling property of the underfill material accompanying the increase in the filler content has been proposed (for example, Patent Documents 1 and 2).
- An object of the present invention is to provide a liquid resin composition that is excellent in low thermal linear expansion property and low room temperature elasticity in a flip-chip type semiconductor device, and that is excellent in balance with a narrow gap filling property. .
- (E) Lewis base or a salt thereof is 1,8-diazabicyclo (5.4.0) undecene-7 or 1,5-diazabicyclo (4.3.0) nonene-5, and salts thereof
- the compound (F) includes at least one selected from a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound (1
- a semiconductor device manufactured by sealing a space between a semiconductor chip and a substrate using the liquid resin composition according to any one of (1) to (10).
- the liquid resin composition which is excellent in low thermal linear expansion property and room temperature low elasticity, and is excellent in balance with the filling property to a narrow gap can be provided. .
- the present invention comprises (A) a liquid epoxy resin, (B) an amine curing agent, (C) core-shell rubber particles, and (D) an inorganic filler, and the solid component content is 65% by weight with respect to the entire liquid resin composition. % Liquid resin composition.
- the (A) liquid epoxy resin used in the present invention is not particularly limited in molecular weight or structure as long as it has two or more epoxy groups in one molecule.
- novolak type epoxy resins such as phenol novolac type epoxy resin and cresol novolak type epoxy resin, bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, N, N-diglycidylaniline, N, N— Aromatic glycidylamine type epoxy resins such as diglycidyl toluidine, diaminodiphenylmethane type glycidylamine, aminophenol type glycidylamine, hydroquinone type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, triphenolpropane Type epoxy resin, alkyl modified triphenol methane type epoxy resin, triazine core-containing epoxy resin, dicyclopentadiene modified phenol type Epoxy resins such as xyalkyl resin, naphthol type epoxy resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin having phenylene and / or biphenylene ske
- an epoxy resin containing a structure in which a glycidyl structure or a glycidylamine structure is bonded to an aromatic ring is more preferable from the viewpoint of high heat resistance, mechanical properties, and moisture resistance, and an aliphatic or alicyclic epoxy resin is particularly reliable. It is more preferable to limit the amount to be used from the viewpoint of low adhesiveness. These may be used alone or in combination of two or more.
- the liquid resin composition of the present invention is liquid at room temperature
- the one type of (A) epoxy resin is at room temperature.
- the mixture of all of the two or more types of (A) epoxy resins is liquid at room temperature. Therefore, when the (A) epoxy resin is a combination of two or more types of (A) epoxy resins, the (A) epoxy resin may be a combination of epoxy resins that are all liquid at room temperature, or partly If the mixture becomes liquid at room temperature by mixing with other epoxy resins that are solid at room temperature, the liquid epoxy resin that is liquid at room temperature and the epoxy resin that is solid at room temperature It may be a combination.
- an epoxy resin is a combination of two or more types of epoxy resins
- it is mixed with other components to produce a liquid resin composition.
- the epoxy resin to be used may be mixed separately to produce a liquid resin composition.
- (A) the epoxy resin is liquid at room temperature means that when all the epoxy resins used as the epoxy resin component (A) are mixed, the mixture becomes liquid at room temperature. .
- room temperature refers to 25 ° C.
- liquid refers to the resin composition having fluidity.
- the content of the epoxy resin is not particularly limited, but is preferably 5% by weight or more and 30% by weight or less, and particularly preferably 5% by weight or more and 20% by weight or less of the entire liquid resin composition of the present invention. When the content is within the above range, the reactivity, the heat resistance and mechanical strength of the composition, and the flow characteristics at the time of sealing are excellent.
- the (B) amine curing agent used in the present invention is not particularly limited in structure as long as it can cure an epoxy resin.
- Examples of (B) amine curing agents include diethylenetriamine, triethylenetetraamine, tetraethylenepentamine, m-xylenediamine, trimethylhexamethylenediamine, 2-methylpentamethylenediamine aliphatic polyamine, isophoronediamine, 1,3- Alicyclic polyamines such as bisaminomethylcyclohexane, bis (4-aminocyclohexyl) methane, norbornenediamine, 1,2-diaminocyclohexane, N-aminoethylpiperazine, 1,4-bis (2-amino-2-methylpropyl) ) Piperazine type polyamine such as piperazine, diaminodiphenylmethane, m-phenylenediamine, diaminodiphenylsulfone, diethyltoluenediamine, trimethylenebis (4-aminobenzoate), polytetra Chiren'okishido - and aromatic polyamines
- a curing agent such as an aromatic amine, an aliphatic amine, a solid amine, a phenolic curing agent, and an acid anhydride can be used in combination.
- aromatic polyamine type curing agents are more preferred from the viewpoints of high heat resistance, electrical characteristics, mechanical characteristics, adhesion, and moisture resistance. Furthermore, when the liquid resin composition of this invention is used as an underfill, what exhibits a liquid state at room temperature (25 degreeC) is more preferable.
- the content of the amine curing agent is not particularly limited, but is preferably 5% by weight or more and 30% by weight or less, and particularly preferably 5% by weight or more and 20% by weight or less of the entire liquid resin composition of the present invention. When the content is within the above range, the reactivity, the mechanical properties of the composition, the heat resistance and the like are excellent.
- the ratio of the active hydrogen equivalent of the (B) amine curing agent to the epoxy equivalent of the (A) epoxy resin is preferably 0.6 or more and 1.4 or less, particularly preferably 0.7 or more and 1.3 or less. (B) If the active hydrogen equivalent of the amine curing agent is within the above range, the reactivity and the heat resistance of the resin composition are particularly improved.
- the (C) core-shell rubber particles used in the present invention can lower the elasticity of the resin composition, and the components are not limited as long as they are spherical.
- acrylic rubber, silicone rubber, urethane rubber, styrene-butadiene rubber, butadiene rubber, etc. can be selected. Of these, silicone rubber is more preferable.
- core-shell rubber particles using silicone rubber include core-shell silicone rubber particles in which the surface of the silicone rubber particles is coated with a silicone resin.
- the glass transition temperature of the core part of the core-shell rubber particles is preferably lower than the glass transition temperature of the shell part and lower than room temperature.
- the core and shell need not be the same type of rubber, and it is possible to combine the core with silicone rubber, the shell with acrylic rubber, or the core with butadiene rubber and the shell with acrylic rubber. is there.
- the core-shell rubber particles are particles having a core part at the center and a shell part covering the core part. Covering is not limited to continuously covering the entire outer surface of the core part, and may be partially or discontinuous or non-uniform.
- the core-shell rubber particles are preferably spherical or substantially spherical in that they are difficult to aggregate.
- the average particle diameter of the core-shell rubber particles is preferably 0.01 ⁇ m or more and 20 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 5 ⁇ m or less.
- the average particle size is at least the lower limit, an increase in cohesive force can be reduced, and a decrease in fluidity due to an increase in viscosity can be suppressed.
- the occurrence of resin clogging can be suppressed even in a narrow gap.
- the addition amount of the core-shell rubber particles is not particularly limited, but is preferably 1% by weight or more and 30% by weight or less, more preferably 3% by weight with respect to the solid component of the liquid resin composition. % To 20% by weight, more preferably 3% to 13% by weight.
- the liquid resin composition contains (D) an inorganic filler.
- the reliability of the semiconductor device can be improved.
- inorganic fillers examples include silicates such as talc, fired clay, unfired clay, mica, and glass, titanium oxide, alumina, fused silica (fused spherical silica, fused crushed silica), synthetic silica, and crystalline silica.
- These (D) inorganic fillers may be used alone or in combination of two or more. Among these, fused silica, crystalline silica, and synthetic silica powder are preferable because the heat resistance, moisture resistance, strength, and the like of the resin composition can be improved.
- the shape of the inorganic filler is not particularly limited, but the shape is preferably spherical from the viewpoint of viscosity and flow characteristics.
- the maximum particle size and the average particle size of the inorganic filler are not particularly limited, it is preferable that the maximum particle size is 25 ⁇ m or less and the average particle size is 0.1 ⁇ m or more and 10 ⁇ m or less.
- the maximum particle size and the average particle size are set to the upper limit value or less, the effect of suppressing partial unfilling or poor filling due to filler clogging when the liquid resin composition flows to the semiconductor device is enhanced.
- the viscosity of a liquid resin composition falls moderately by making the said average particle diameter more than the said lower limit, and a filling property improves.
- the addition amount of the inorganic filler is not particularly limited, but is preferably 70% by weight or more and 99% by weight or less, and more preferably 80% by weight with respect to the solid component of the liquid resin composition. % To 98% by weight.
- the solid component in the liquid resin composition is a component that is solid at room temperature and does not dissolve in the epoxy resin.
- the solid component in the liquid resin composition of the present invention corresponds to two types of (D) inorganic filler and (C) core-shell rubber particles.
- the solid component in the liquid resin composition is preferably contained in an amount of 65% by weight or more. More preferably, it is 65% by weight or more and 80% by weight or less.
- the solid component content is 65% by weight or more, the effect of improving the reliability of the semiconductor device is enhanced.
- the solid component content is 80% by weight or less, the balance between the narrow gap filling property and the reliability is achieved. Excellent.
- liquid resin composition of the present invention preferably contains (E) a Lewis base or a salt thereof in order to enable a high content of solid components.
- Examples of (E) Lewis base or a salt thereof include 1,8-diazabicyclo (5.4.0) undecene-7,1,5-diazabicyclo (4.3.0) nonene-5,1,4-diazadicyclo (2.2.2)
- Amine compounds such as octane, imidazoles, diethylamine, triethylenediamine, benzyldimethylamine, 2- (dimethylaminomethylphenol) 2,4,6-tris (dimethylaminomethyl) phenol, or salts thereof
- Phosphine compounds such as triphenylphosphine, phenylphosphine, diphenylphosphine, etc.
- tertiary amine compounds such as benzyldimethylamine, 2- (dimethylaminomethylphenol), 2,4,6-tris (dimethyl) Aminomethyl) phenol, imidazole 1,8-diazabicyclo (5.4.0) undecene-7, 1,5-diazabicyclo (4.3.0) nonene-5, and 1,4-diazadicyclo (2.2.2) octane or these Salts are preferred, and 1,8-diazabicyclo (5.4.0) undecene-7 and 1,5-diazabicyclo (4.3.0) nonene-5 or salts thereof are particularly preferred.
- (E) is a Lewis base salt
- specific examples include a Lewis base phenol salt and a 1,8-diazabicyclo (5.4.0) undecene-7 phenol salt.
- the content of the Lewis base and its salt is not particularly limited, but is preferably 0.005% by weight or more and 0.3% by weight or less of the entire liquid resin composition of the present invention, and 0.01% by weight or more and 0.2% or less. % By weight or less is particularly preferable, and 0.02% by weight or more and 0.1% by weight or less is more preferable.
- the content is equal to or higher than the lower limit, the content of the solid component becomes good, and a good narrow gap filling property is obtained.
- the viscosity of a liquid resin composition is reduced as content is below the said upper limit, and favorable solid component content is obtained.
- the Lewis base or a salt thereof is not particularly limited, but is previously mixed with (A) an epoxy resin and / or (B) an epoxy resin curing agent before producing the liquid resin composition of the present invention. It is preferable. Thereby, the dispersibility of (E) Lewis base or a salt thereof in (A) epoxy resin and / or (B) epoxy resin curing agent is improved, and more solid components can be introduced.
- Premixing means stirring and mixing at room temperature, and there is no particular upper limit on the stirring and mixing time, but stirring and mixing for 1 hour or longer can be accomplished by combining (E) Lewis base or a salt thereof with (A) epoxy resin and / or ( B) It is preferable from the viewpoint of being uniformly dispersed in the epoxy resin curing agent.
- the compound (F) preferably contains a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound.
- a solid component By containing these compounds (F), a solid component There is an effect of containing a high amount.
- Examples of the tetra-substituted phosphonium compound of compound (F) include compounds represented by the following general formula (1).
- P represents a phosphorus atom.
- R1, R2, R3 and R4 each represents an aromatic group or an alkyl group.
- A represents a functional group selected from a hydroxyl group, a carboxyl group, and a thiol group.
- An anion of an aromatic compound having at least one of the groups in the aromatic ring, AH represents an aromatic compound having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring
- X and y are integers of 1 to 3
- z is an integer of 0 to 3
- x y.
- R1, R2, R3 and R4 are preferably an aromatic group or an alkyl group having 1 to 10 carbon atoms.
- R1, R2, R3 and R4 bonded to a phosphorus atom are phenyl groups
- AH is a compound having a hydroxyl group bonded to an aromatic ring, that is, a phenol.
- A is an anion of the phenols because the effect of increasing the content of the solid component is increased.
- Examples of the phosphobetaine compound of compound (F) include a compound represented by the following general formula (2).
- P represents a phosphorus atom
- X1 represents an alkyl group having 1 to 3 carbon atoms
- Y1 represents a hydroxyl group
- f is an integer of 0 to 5
- g is 0 to It is an integer of 3.
- Examples of the adduct of the compound (F) with the phosphine compound and the quinone compound include compounds represented by the following general formula (3).
- P represents a phosphorus atom.
- R5, R6 and R7 represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, and these are the same as each other.
- R8, R9 and R10 each represents a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, which may be the same or different from each other, and R8 and R9 are bonded to each other; (It may be an annular structure.)
- Examples of the phosphine compound used for the adduct of the compound (F) with the phosphine compound and the quinone compound include triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, and tris (benzyl) phosphine.
- An aromatic ring such as an unsubstituted or substituted substituent such as an alkyl group or an alkoxyl group is preferred.
- Examples of the substituent such as an alkyl group or an alkoxyl group include those having 1 to 6 carbon atoms. From the viewpoint of availability, triphenylphosphine is preferable.
- examples of the quinone compound used in the adduct of the compound (F) with the phosphine compound and the quinone compound include o-benzoquinone, p-benzoquinone, and anthraquinone, and among them, p-benzoquinone is preferable from the viewpoint of storage stability.
- Examples of the adduct of the compound (F) with the phosphonium compound and the silane compound include compounds represented by the following general formula (4).
- P represents a phosphorus atom and Si represents a silicon atom.
- R11, R12, R13 and R14 are each an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring. And these may be the same or different from each other, wherein X2 is an organic group bonded to the groups Y2 and Y3, where X3 is an organic group bonded to the groups Y4 and Y5.
- Y2 and Y3 represent a group formed by releasing a proton from a proton donating group, and groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate structure.
- a donating group represents a group formed by releasing protons, and groups Y4 and Y5 in the same molecule are bonded to a silicon atom to form a chelate structure.
- X2 and X3 are the same as each other And or different, Y2, Y3, Y4 and Y5 may be the being the same or different .
- Z1 is an organic group or an aliphatic group, an aromatic ring or a heterocyclic ring.
- examples of R11, R12, R13, and R14 include phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, naphthyl group, hydroxynaphthyl group, benzyl group, methyl group, ethyl group, Examples thereof include n-butyl group, n-octyl group and cyclohexyl group.
- aromatic group having a substituent such as phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, hydroxynaphthyl group or the like
- a substituted aromatic group is more preferred.
- the groups represented by -Y2-X2-Y3- and -Y4-X3-Y5- in general formula (4) are composed of groups in which the proton donor releases two protons.
- proton donors that is, compounds before releasing two protons include, for example, catechol, pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2′-biphenol, 1,1 '-Bi-2-naphthol, salicylic acid, 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chloranilic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2 -Propanediol, glycerin and the like can be mentioned, and among these, catechol, 1,2-dihydroxynaphthalene and 2,3-dihydroxynaphthalene are more preferable.
- Z1 in the general formula (4) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, Aliphatic hydrocarbon groups such as hexyl group and octyl group, aromatic hydrocarbon groups such as phenyl group, benzyl group, naphthyl group and biphenyl group, glycidyloxypropyl group, mercaptopropyl group, aminopropyl group and vinyl group
- a reactive substituent etc. are mentioned, Among these, a methyl group, an ethyl group, a phenyl group, a naphthyl group, and a biphenyl group are more preferable from the surface of thermal stability.
- the amount of the compound (F) added is not particularly limited, but is preferably 0.005 wt% or more and 0.3 wt% or less, more preferably 0.005 wt% or less with respect to the entire liquid resin composition. It is 01 wt% or more and 0.2 wt% or less.
- the content is equal to or higher than the lower limit, the content of the solid component becomes good, and a good narrow gap filling property is obtained.
- the viscosity of a liquid resin composition is reduced as content is below the said upper limit, and favorable solid component content is obtained.
- liquid resin composition of the present invention in addition to the above-described components such as (A) epoxy resin and (B) amine curing agent, a coupling agent, liquid low stress agent, diluent, pigment, difficulty Additives such as a flame retardant, a leveling agent, and an antifoaming agent can be used.
- liquid resin composition of the present invention the above-described components and additives are dispersed and kneaded using an apparatus such as a planetary mixer, three rolls, two hot rolls, and a laika machine, and then defoamed under vacuum. Can be manufactured.
- the semiconductor device of the present invention is manufactured using the liquid resin composition of the present invention. Specifically, a flip chip type semiconductor device can be given. With respect to this flip chip type semiconductor device, a semiconductor element (semiconductor chip) provided with a solder electrode is connected to a substrate, and a gap between the semiconductor chip and the substrate is sealed. A solder resist is formed so that the solder does not flow in a region other than the portion where the solder electrode on the substrate side is joined.
- the semiconductor device of the present invention is manufactured as follows, for example. First, the semiconductor chip provided with the solder electrode is connected to the substrate, and the gap between the semiconductor chip and the substrate is filled with the liquid resin composition of the present invention.
- a method utilizing a capillary phenomenon is common. Specifically, after applying the liquid resin composition of the present invention to one side of a semiconductor chip, and then pouring the gap between the semiconductor chip and the substrate by capillary action, after applying the liquid resin composition to two sides of the semiconductor chip , A method of pouring into the gap between the semiconductor chip and the substrate by capillary action, a through hole is opened in the central portion of the semiconductor chip, and after applying the liquid resin composition of the present invention around the semiconductor chip, the semiconductor chip and the substrate And a method of pouring into the gap by capillary action. Further, instead of applying the whole amount at once, a method of applying in two steps is also performed. In addition, methods such as potting and printing can be used.
- Curing conditions are not particularly limited, but can be cured by heating in a temperature range of 100 ° C. to 170 ° C. for 1 to 12 hours, for example. Further, for example, heat curing may be performed while changing the temperature stepwise, such as heating at 100 ° C. for 1 hour and subsequently heating at 150 ° C. for 2 hours.
- Such semiconductor devices include flip-chip semiconductor devices, cavity down type BGA (Ball Grid Array), POP (Package on Package) type BGA (Ball Grid Array), TAB (Tape Automated Bonding) type BGA (Ball). Grid Array) and CSP (Chip Scale Package).
- the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.
- the compounding quantity in an Example and a comparative example is a weight part.
- Example 1 100 parts by weight of bisphenol F type epoxy resin, 32 parts by weight of aromatic primary amine type curing agent, 25 parts by weight of core shell rubber particles C11, 310 parts by weight of inorganic filler, 4 parts by weight of silane coupling agent 5 parts by weight of the agent, 0.1 part by weight of the fluidity improver, 0.05 part by weight of the colorant are mixed, mixed using a planetary mixer and three rolls, and liquidized by vacuum defoaming treatment.
- a sealing resin composition was prepared. About the obtained liquid sealing resin composition, it evaluated by the following evaluation methods and the result was described in Table 1.
- Viscosity Viscosity (Pa ⁇ s) was measured with a TV-E viscometer at 25 ° C. and 5 rpm. Glass transition temperature, linear expansion coefficient: Using a thermomechanical analyzer (TMA), the liquid sealing resin composition cured in a square columnar shape is measured, and the glass transition temperature (° C.) and linear expansion coefficient (ppm / ° C.) was measured.
- TMA thermomechanical analyzer
- ppm / ° C. linear expansion coefficient
- -Elastic modulus The liquid sealing resin composition hardened in a plate shape was measured using a viscoelasticity measuring device (DMA), and the elastic modulus (GPa) at room temperature (25 ° C) and a frequency of 1 Hz was measured.
- a PHASE-2TEG wafer (wafer thickness: 0.35 mm) manufactured by Hitachi Ultra LSI Co. is used as a circuit protection film of the chip, and a lead / unsolder having Sn / Ag / Cu composition is formed as a solder bump. It cut
- a 0.8 mmt glass epoxy substrate equivalent to FR5 manufactured by Sumitomo Bakelite Co., Ltd. is used as a base, and a solder resist PSR4000 / AUS308 manufactured by Taiyo Ink Mfg. Co., Ltd. is formed on both sides thereof, and the solder bump arrangement described above is formed on one side.
- a corresponding gold-plated pad was cut into a size of 50 mm ⁇ 50 mm and used.
- TSF-6502 manufactured by Kester, rosin flux
- a flux is uniformly applied to a sufficiently smooth metal or glass plate to a thickness of about 50 ⁇ m using a doctor blade, and then the circuit surface of the chip is lightly brought into contact with the flux film using a flip chip bonder. Later, the flux was transferred to the solder bumps, and then the chip was pressed onto the substrate. A heat treatment was performed in an IR reflow furnace, and solder bumps were melted and produced. Cleaning was performed using a cleaning liquid after the melt bonding.
- the liquid sealing resin composition is filled and sealed by heating the substrate on which the manufactured chip is mounted on a hot plate at 110 ° C., and applying the liquid sealing resin composition prepared on one side of the chip to fill the gap.
- the liquid sealing resin composition was heated and cured in an oven at 150 ° C. for 120 minutes to obtain a semiconductor device having a chip thickness of 0.35 mm for evaluation test.
- the obtained semiconductor device was evaluated by the following evaluation methods, and the results are shown in Table 1.
- Temperature cycle property As the temperature cycle test, the semiconductor device subjected to the above reflow test was subjected to a thermal cycle treatment of ( ⁇ 55 ° C./30 minutes) and (125 ° C./30 minutes), and ultrasonic waves were applied every 250 cycles. The presence or absence of peeling of the interface between the semiconductor chip and the liquid resin composition inside the semiconductor device was confirmed with a flaw detector, and the surface of the liquid resin composition on the side surface of the chip was observed using an optical microscope to observe the presence or absence of cracks. The temperature cycle test was finally performed up to 1000 cycles. The case where peeling and cracking were not observed was judged as “good”, and the case where peeling and cracking were observed was judged as “bad”.
- Example 2 A liquid resin composition was prepared in the same manner as in Example 1 except that the core-shell rubber particles C11 were changed to core-shell rubber particles C12 having different particle diameters. Using the obtained liquid resin composition, the liquid resin composition and the semiconductor device were evaluated in the same manner as in Example 1, and the results are shown in Table 1.
- Examples 3 to 6 A liquid resin composition was prepared in the same manner as in Example 1 except that the compounding amount of the core-shell rubber particles C11 and the compounding amount of the inorganic filler were changed to the numerical values shown in Table 1. Using the obtained liquid resin composition, the liquid resin composition and the semiconductor device were evaluated in the same manner as in Example 1, and the results are shown in Table 1.
- Example 1 A liquid resin composition was prepared in the same manner as in Example 1 except that the core-shell rubber particles C11 were not blended and the blending amount of the inorganic filler was changed to the values shown in Table 1. Using the obtained liquid resin composition, the liquid resin composition and the semiconductor device were evaluated in the same manner as in Example 1, and the results are shown in Table 1.
- Example 2 A liquid resin composition was prepared in the same manner as in Example 1 except that the core-shell rubber particles C11 were not blended, liquid polybutadiene was blended, and the blending amount of the inorganic filler was changed to the values shown in Table 1. Using the obtained liquid resin composition, the liquid resin composition and the semiconductor device were evaluated in the same manner as in Example 1, and the results are shown in Table 1.
- Example 3 A liquid resin composition was prepared in the same manner as in Example 1 except that the compounding amount of the core-shell rubber particles C11 and the compounding amount of the inorganic filler were changed to the numerical values shown in Table 1. Using the obtained liquid resin composition, the liquid resin composition and the semiconductor device were evaluated in the same manner as in Example 1, and the results are shown in Table 1.
- the material used by the Example and the comparative example is as follows.
- Bisphenol F type epoxy resin manufactured by Dainippon Ink and Chemicals, EXA-830LVP, bisphenol F type liquid epoxy resin, epoxy equivalent 161
- Aromatic primary amine type curing agent Nippon Kayaku Co., Ltd., Kayahard-AA, 3,3′-diethyl-4,4′-diaminodiphenylmethane, amine equivalent 63.5
- C12 Core-shell silicone rubber particle, manufactured by Shin-Etsu Chemical Co., Ltd., KMP-600, core-shell rubber particle whose surface is covered with silicone resin, average particle size 5 ⁇ m Liquid polybutadiene: Daicel Chemical Industries, PB3600 In
- Examples 1 to 6 contain core-shell rubber particles and contain 65% by weight or more of solid components, so that low elasticity and low thermal linear expansion are achieved, and peeling and cracking occur in the temperature cycle test. I didn't.
- the liquid resin composition containing 65% by weight or more of the solid component including the core-shell rubber particles achieved low elasticity and low thermal linear expansion, and was able to improve the reliability of the semiconductor device.
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Abstract
Description
(1)(A)液状エポキシ樹脂、(B)アミン硬化剤、(C)コアシェルゴム粒子、および(D)無機充填剤を含有し、液状樹脂組成物全体に対する固形成分の含有量が65重量%以上である液状樹脂組成物。
(2)前記液状樹脂組成物の前記固形成分に対する(C)コアシェルゴム粒子の含有量が、1重量%以上30重量%以下である上記(1)の液状樹脂組成物。
(4)(E)ルイス塩基またはその塩をさらに含む上記(1)乃至(3)のいずれかに記載の液状樹脂組成物。
(6)前記液状樹脂組成物全体に対する(E)ルイス塩基またはその塩の含有量が、0.005重量%以上0.3重量%以下である上記(4)または(5)に記載の液状樹脂組成物。
(8)シランカップリング剤をさらに含む上記(1)乃至(7)のいずれかに記載の液状樹脂組成物。
(10)(C)コアシェルゴム粒子の平均粒子径が、0.01μm以上20μm以下である上記(1)乃至(9)のいずれかに記載の液状樹脂組成物。
本発明は、(A)液状エポキシ樹脂、(B)アミン硬化剤、(C)コアシェルゴム粒子、および(D)無機充填剤を含有し、液状樹脂組成物全体に対する固形成分の含有量が65重量%以上である液状樹脂組成物である。以下、本発明を詳細に説明する。
本発明に用いる(A)液状エポキシ樹脂としては、一分子中にエポキシ基を2個以上有するものであれば特に分子量や構造は限定されるものではない。
本発明に用いる(B)アミン硬化剤としては、エポキシ樹脂を硬化し得るものであれば特に構造は限定されない。
これらのアミン硬化剤は、1種単独で用いても、2種以上の組合せでもよい。
本発明に用いる(C)コアシェルゴム粒子は、樹脂組成物を低弾性化させることができ、球状であれば、成分は、限定されるものではない。
本発明に用いる(D)無機充填剤は、破壊靭性などの機械的強度、熱時寸法安定性、耐湿性を向上することから、液状樹脂組成物が(D)無機充填剤を含有することにより、半導体装置の信頼性を特に向上することができる。
本発明の液状樹脂組成物は、上記成分以外に、固形成分の高含有率を可能にするために、(E)ルイス塩基またはその塩を含むことが好ましい。
本発明の半導体装置は、本発明の液状樹脂組成物を用いて製造される。具体的にはフリップチップ型半導体装置が挙げられる。このフリップチップ型半導体装置に関しては、半田電極が具備された半導体素子(半導体チップ)を基板に接続し、該半導体チップと該基板の間隙を封止したものであって、この場合、一般的に基板側の半田電極が接合する部位以外の領域は半田が流れないようにソルダーレジストが形成されている。
まず、半田電極が具備された半導体チップを基板に接続し、半導体チップと基板との間隙に本発明の液状樹脂組成物を充填する。
ビスフェノールF型エポキシ樹脂を100重量部、芳香族1級アミン型硬化剤を32重量部、コアシェルゴム粒子C11を25重量部、無機充填剤を310重量部、シランカップリング剤を4重量部、希釈剤を5重量部、流動性向上剤を0.1重量部、着色剤を0.05重量部、配合し、プラネタリーミキサーと3本ロールを用いて混合し、真空脱泡処理することにより液状封止樹脂組成物を作製した。
得られた液状封止樹脂組成物について、以下の評価方法により評価し、結果を表1に記載した。
・粘度:TV-E型粘度計にて、25℃で5rpmの条件で、粘度(Pa・s)を測定した。
・ガラス転移温度、線膨張係数:熱機械分析装置(TMA)を用いて、四角柱状に硬化した液状封止樹脂組成物を測定し、ガラス転移温度(℃)および線膨張係数(ppm/℃)を測定した。
・弾性率:粘弾性測定装置(DMA)を用いて、板状に硬化した液状封止樹脂組成物を測定し、室温(25℃)、周波数1Hzでの弾性率(GPa)を測定した。
得られた半導体装置について、以下の評価方法により評価し、結果を表1に記載した。
・充填性(流動性):上記作製した半導体装置について、超音波探傷装置を用いて、液状封止樹脂組成物を充填した部分のボイドの発生を確認した。
充填不良ボイドが観察されなかったものを「良好」とし、充填不良ボイドが観察されものを「不良」とした。
剥離および亀裂が観察されなかったものを「良好」、剥離および亀裂が観察されたものを「不良」とした。
剥離および亀裂が観察されなかったものを「良好」、剥離および亀裂が観察されたものを「不良」とした。
コアシェルゴム粒子C11を、粒子径の異なるコアシェルゴム粒子C12とした外は、実施例1と同様の方法によって、液状樹脂組成物を作製した。得られた液状樹脂組成物を用いて、実施例1と同様に、液状樹脂組成物および半導体装置について評価し、結果を表1に記載した。
コアシェルゴム粒子C11の配合量、及び無機充填剤の配合量を表1に示す数値に変えた以外は、実施例1と同様の方法によって、液状樹脂組成物を作製した。得られた液状樹脂組成物を用いて、実施例1と同様に、液状樹脂組成物および半導体装置について評価し、結果を表1に記載した。
コアシェルゴム粒子C11を配合しないものであり、無機充填剤の配合量を表1に示す数値に変えた以外は、実施例1と同様の方法によって、液状樹脂組成物を作製した。得られた液状樹脂組成物を用いて、実施例1と同様に、液状樹脂組成物および半導体装置について評価し、結果を表1に記載した。
コアシェルゴム粒子C11を配合せず、液状ポリブタジエンを配合し、無機充填剤の配合量を表1に示す数値に変えた以外は、実施例1と同様の方法によって、液状樹脂組成物を作製した。得られた液状樹脂組成物を用いて、実施例1と同様に、液状樹脂組成物および半導体装置について評価し、結果を表1に記載した。
コアシェルゴム粒子C11の配合量、及び無機充填剤の配合量を表1に示す数値に変えた以外は、実施例1と同様の方法によって、液状樹脂組成物を作製した。得られた液状樹脂組成物を用いて、実施例1と同様に、液状樹脂組成物および半導体装置について評価し、結果を表1に記載した。
・ビスフェノールF型エポキシ樹脂:大日本インキ化学工業株式会社製、EXA-830LVP、ビスフェノールF型液状エポキシ樹脂、エポキシ当量161
・芳香族1級アミン型硬化剤:日本化薬株式会社製、カヤハード-AA、3,3'-ジエチル-4,4'-ジアミノジフェニルメタン、アミン当量63.5
・コアシェルゴム粒子C11:コアシェルシリコーンゴム粒子、信越化学工業株式会社製、KMP-605、シリコーンゴム粒子の表面をシリコーンレジンにて被覆したコアシェル粒子、平均粒子径2μm
・コアシェルゴム粒子C12:コアシェルシリコーンゴム粒子、信越化学工業株式会社製、KMP-600、シリコーンゴム粒子の表面をシリコーンレジンにて被覆したコアシェルゴム粒子、平均粒子径5μm
・液状ポリブタジエン:ダイセル化学工業株式会社製、PB3600
・無機充填剤:合成球状シリカ、アドマテクス株式会社製、アドマファインSO-E3、合成球状シリカ、最大粒子径24mμ以下、平均粒子径1μm
・シランカップリング剤:エポキシシランカップリング剤、信越化学工業株式会社製、KBM403E、γ-グリシドキシプロピルトリメトキシシラン
・着色剤:三菱化学株式会社製MA-600、カーボンブラック
・希釈剤:東京化成工業株式会社製(試薬)BCSA、エチレングリコールモノ-ノルマル-ブチルエーテルアセテート
・流動性向上剤:1,8-ジアザビシクロ(5,4,0)ウンデセン-7(DBU)
コアシェルゴム粒子を含まない比較例1では、温度サイクル試験中に剥離が発生した。比較例2のようにコアシェルゴム粒子の代わりに、液状のゴム成分が含まれる場合は、弾性率は低下するものの、ガラス転移温度も低下してしまい、耐リフロー試験にて剥離が発生した。耐リフロー試験にて剥離が発生したため、その後の温度サイクル試験は実施しなかった。比較例3のように固形成分が65重量%未満である場合、線膨張係数が大きくなり、比較例1と同様に温度サイクル試験中に剥離が発生した。比較例4のように固形成分が65重量%未満である場合、線膨張係数が大きくなり、温度サイクル試験中にバンプクラックを伴って剥離が発生した。
Claims (11)
- (A)液状エポキシ樹脂、(B)アミン硬化剤、(C)コアシェルゴム粒子、および(D)無機充填剤を含有し、液状樹脂組成物全体に対する固形成分の含有量が65重量%以上である液状樹脂組成物。
- 前記液状樹脂組成物の前記固形成分に対する(C)コアシェルゴム粒子の含有量が、1重量%以上30重量%以下である請求項1記載の液状樹脂組成物。
- (C)コアシェルゴム粒子が、コアシェルシリコーンゴム粒子である請求項1または2に記載の液状樹脂組成物。
- (E)ルイス塩基またはその塩をさらに含む請求項1乃至3のいずれか1項に記載の液状樹脂組成物。
- (E)ルイス塩基またはその塩が、1,8-ジアザビシクロ(5.4.0)ウンデセン-7または1,5-ジアザビシクロ(4.3.0)ノネン-5、およびそれらの塩である請求項4に記載の液状樹脂組成物。
- 前記液状樹脂組成物全体に対する(E)ルイス塩基またはその塩の含有量が、0.005重量%以上0.3重量%以下である請求項4または5に記載の液状樹脂組成物。
- 化合物(F)として、テトラ置換ホスホニウム化合物、ホスホベタイン化合物、ホスフィン化合物とキノン化合物との付加物、およびホスホニウム化合物とシラン化合物との付加物から選ばれた少なくとも1種を含む請求項1乃至6のいずれか1項に記載の液状樹脂組成物。
- シランカップリング剤をさらに含む請求項1乃至7のいずれか1項に記載の液状樹脂組成物。
- (A)液状エポキシ樹脂が、ビスフェノール型エポキシ樹脂である請求項1乃至8のいずれか1項に記載の液状樹脂組成物。
- (C)コアシェルゴム粒子の平均粒子径が、0.01μm以上20μm以下である請求項1乃至9のいずれか1項に記載の液状樹脂組成物。
- 請求項1乃至10のいずれか1項に記載の液状樹脂組成物を用いて、半導体チップと基板との間を封止して製造された半導体装置。
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US13/387,901 US20120126434A1 (en) | 2009-07-31 | 2010-07-20 | Liquid resin composition and semiconductor device using the same |
CA2769176A CA2769176A1 (en) | 2009-07-31 | 2010-07-20 | Liquid resin composition and semiconductor device using the same |
CN2010800335861A CN102471464A (zh) | 2009-07-31 | 2010-07-20 | 液态树脂组合物及使用其的半导体装置 |
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JP2017071704A (ja) * | 2015-10-07 | 2017-04-13 | 日立化成株式会社 | アンダーフィル用樹脂組成物、電子部品装置及び電子部品装置の製造方法 |
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WO2019124476A1 (ja) * | 2017-12-21 | 2019-06-27 | 株式会社ダイセル | 硬化性エポキシ樹脂組成物及びその硬化物、並びに光半導体装置 |
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CN102471464A (zh) | 2012-05-23 |
US20120126434A1 (en) | 2012-05-24 |
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