WO2010134549A1 - 感光性樹脂組成物 - Google Patents
感光性樹脂組成物 Download PDFInfo
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- WO2010134549A1 WO2010134549A1 PCT/JP2010/058462 JP2010058462W WO2010134549A1 WO 2010134549 A1 WO2010134549 A1 WO 2010134549A1 JP 2010058462 W JP2010058462 W JP 2010058462W WO 2010134549 A1 WO2010134549 A1 WO 2010134549A1
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- Prior art keywords
- photosensitive resin
- group
- mass
- resin composition
- compound
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 67
- -1 thiol compound Chemical class 0.000 claims abstract description 67
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- 125000004414 alkyl thio group Chemical group 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 3
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- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
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- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- AGEZXYOZHKGVCM-UHFFFAOYSA-N benzyl bromide Chemical compound BrCC1=CC=CC=C1 AGEZXYOZHKGVCM-UHFFFAOYSA-N 0.000 description 1
- FQUNFJULCYSSOP-UHFFFAOYSA-N bisoctrizole Chemical compound N1=C2C=CC=CC2=NN1C1=CC(C(C)(C)CC(C)(C)C)=CC(CC=2C(=C(C=C(C=2)C(C)(C)CC(C)(C)C)N2N=C3C=CC=CC3=N2)O)=C1O FQUNFJULCYSSOP-UHFFFAOYSA-N 0.000 description 1
- OQROAIRCEOBYJA-UHFFFAOYSA-N bromodiphenylmethane Chemical compound C=1C=CC=CC=1C(Br)C1=CC=CC=C1 OQROAIRCEOBYJA-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- WXZKPELXXQHDNS-UHFFFAOYSA-N decane-1,1-dithiol Chemical compound CCCCCCCCCC(S)S WXZKPELXXQHDNS-UHFFFAOYSA-N 0.000 description 1
- 238000004042 decolorization Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- FJBFPHVGVWTDIP-UHFFFAOYSA-N dibromomethane Chemical compound BrCBr FJBFPHVGVWTDIP-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229940052303 ethers for general anesthesia Drugs 0.000 description 1
- ORBFAMHUKZLWSD-UHFFFAOYSA-N ethyl 2-(dimethylamino)benzoate Chemical compound CCOC(=O)C1=CC=CC=C1N(C)C ORBFAMHUKZLWSD-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- FWQHNLCNFPYBCA-UHFFFAOYSA-N fluoran Chemical compound C12=CC=CC=C2OC2=CC=CC=C2C11OC(=O)C2=CC=CC=C21 FWQHNLCNFPYBCA-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- ALPIESLRVWNLAX-UHFFFAOYSA-N hexane-1,1-dithiol Chemical compound CCCCCC(S)S ALPIESLRVWNLAX-UHFFFAOYSA-N 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- PMRYVIKBURPHAH-UHFFFAOYSA-N methimazole Chemical compound CN1C=CNC1=S PMRYVIKBURPHAH-UHFFFAOYSA-N 0.000 description 1
- 229940086559 methyl benzoin Drugs 0.000 description 1
- 229940012189 methyl orange Drugs 0.000 description 1
- STZCRXQWRGQSJD-GEEYTBSJSA-M methyl orange Chemical compound [Na+].C1=CC(N(C)C)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 STZCRXQWRGQSJD-GEEYTBSJSA-M 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- SHXOKQKTZJXHHR-UHFFFAOYSA-N n,n-diethyl-5-iminobenzo[a]phenoxazin-9-amine;hydrochloride Chemical compound [Cl-].C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=[NH2+])C2=C1 SHXOKQKTZJXHHR-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- SKEQOTBKQUCUGK-UHFFFAOYSA-N o-(2-hydroxyethyl) propanethioate Chemical compound CCC(=S)OCCO SKEQOTBKQUCUGK-UHFFFAOYSA-N 0.000 description 1
- XVKLLVZBGMGICC-UHFFFAOYSA-N o-[3-propanethioyloxy-2,2-bis(propanethioyloxymethyl)propyl] propanethioate Chemical compound CCC(=S)OCC(COC(=S)CC)(COC(=S)CC)COC(=S)CC XVKLLVZBGMGICC-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- YBBJKCMMCRQZMA-UHFFFAOYSA-N pyrithione Chemical compound ON1C=CC=CC1=S YBBJKCMMCRQZMA-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- PYAOPMWCFSVFOT-UHFFFAOYSA-N tisopurine Chemical compound SC1=NC=NC2=C1C=NN2 PYAOPMWCFSVFOT-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- FQYWWLSIKWDAEC-UHFFFAOYSA-N tributoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCOCC1CO1 FQYWWLSIKWDAEC-UHFFFAOYSA-N 0.000 description 1
- WEAPVABOECTMGR-UHFFFAOYSA-N triethyl 2-acetyloxypropane-1,2,3-tricarboxylate Chemical compound CCOC(=O)CC(C(=O)OCC)(OC(C)=O)CC(=O)OCC WEAPVABOECTMGR-UHFFFAOYSA-N 0.000 description 1
- 239000001069 triethyl citrate Substances 0.000 description 1
- VMYFZRTXGLUXMZ-UHFFFAOYSA-N triethyl citrate Natural products CCOC(=O)C(O)(C(=O)OCC)C(=O)OCC VMYFZRTXGLUXMZ-UHFFFAOYSA-N 0.000 description 1
- 235000013769 triethyl citrate Nutrition 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- LTOKKZDSYQQAHL-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-yl)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCC1CO1 LTOKKZDSYQQAHL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- JEVGKYBUANQAKG-UHFFFAOYSA-N victoria blue R Chemical compound [Cl-].C12=CC=CC=C2C(=[NH+]CC)C=CC1=C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 JEVGKYBUANQAKG-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/38—Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/0275—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with dithiol or polysulfide compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
Definitions
- the present invention relates to a photosensitive resin composition that can be developed with an alkaline aqueous solution, and a dry film resist using the composition. More specifically, the present invention uses a photosensitive resin composition suitable for ITO electrode formation and iron alloy etching (chemical milling) in the production of flat panel display display materials and the like, and the composition. It relates to dry film resist.
- the photolithographic method is a method in which a photosensitive resin composition is applied onto a substrate, pattern exposure is performed to polymerize and cure the exposed portion of the photosensitive resin composition, and an unexposed portion is removed with a developer to form a resist on the substrate.
- a method of forming a conductor pattern on a substrate by forming a pattern, forming a conductor pattern by etching or plating, and then peeling and removing the resist pattern from the substrate.
- a method for producing a printed wiring board using a dry film resist will be briefly described.
- a protective layer such as a polyethylene film is peeled from the dry film resist.
- the photosensitive resin layer and the support are laminated on a substrate such as a copper-clad laminate using a laminator so that the substrate, the photosensitive resin layer, and the support are in this order.
- the exposed portion is polymerized and cured by exposing the photosensitive resin layer through a photomask having a wiring pattern.
- the support made of polyethylene terephthalate or the like is peeled off.
- a non-exposed portion of the photosensitive resin layer is dissolved or dispersed and removed by a developing solution such as an aqueous solution having weak alkalinity to form a resist pattern on the substrate.
- a developing solution such as an aqueous solution having weak alkalinity
- a known etching process or pattern plating process is performed using the formed resist pattern as a protective mask.
- the resist pattern is peeled from the substrate to produce a substrate having a conductor pattern, that is, a printed wiring board.
- Patent Document 1 discloses that the adhesion of the photosensitive resin composition to the ITO film is improved by including 0.01 to 0.5 parts by mass of a silane coupling agent.
- Patent Document 2 describes a photosensitive resin composition containing 0.001 to 5 parts by mass of a polyfunctional thiol compound having two or more mercapto groups in one molecule.
- an effect as an adhesion aid for a copper base material is disclosed, and there is no disclosure about an effect of improving adhesion to an ITO film or storage stability.
- the problem to be solved by the present invention is to provide a photosensitive resin composition excellent in chemical resistance, adhesion to an ITO film and excellent in storage stability, and a photosensitive resin laminate using the same. That is.
- the present invention is as follows.
- Alkali-soluble resin 40 to 90% by mass (B) 5 to 50% by mass of a compound having an ethylenically unsaturated double bond, (C) 1 to 20% by mass of a photopolymerization initiator, (D) A photosensitive resin composition comprising 0.001 to 2.5% by mass of an epoxysilane compound and 0.005 to 1.0% by mass of (E) a thiol compound.
- the (E) thiol compound is represented by the following general formula (I): ⁇ In the formula, R 1 is a group having aromaticity. ⁇ The photosensitive resin composition of Claim 1 which is a thiol compound represented by these. [3] The photosensitive resin composition according to [2], wherein the (E) thiol compound represented by the general formula (I) is a heterocyclic compound in which R 1 has aromaticity. .
- the thiol compound (E) is represented by the following general formula (III): ⁇ Wherein R 5 is a kind selected from the group consisting of an alkyl group having 1 to 3 carbon atoms, an alkoxy group having 1 to 3 carbon atoms, an alkylthio group having 1 to 3 carbon atoms, SH, and NR 6 R 7 . Each of R 6 and R 7 is independently a group selected from the group consisting of H, an alkyl group having 1 to 12 carbon atoms, and an aryl group. ⁇ The photosensitive resin composition as described in said [2] which is a compound represented by these.
- the (D) epoxysilane compound is represented by the following general formula (IV): ⁇ Wherein R 8 is an alkyl group having 1 to 5 carbon atoms, A is an alkyl group having 1 to 4 carbon atoms or — (D—O) n —, and D is 1 to 3 carbon atoms N is an integer of 1 to 5, and B is the following general formula (V): It is group which has the functional group represented by these. ⁇
- the photosensitive resin composition according to any one of [1] to [5] above, which is a compound represented by
- a photosensitive resin laminate in which a photosensitive resin layer made of the photosensitive resin composition according to any one of [1] to [7] is laminated on a support film.
- [9] Includes a laminating step of laminating the photosensitive resin laminate according to [8] on a transparent electrode, an exposure step of exposing the laminate, and a developing step of developing the exposed laminate.
- a resist pattern forming method is
- a method for manufacturing an electrode comprising etching the transparent electrode according to a resist pattern obtained by the pattern forming method according to [9].
- a method for producing an iron-based alloy structure comprising etching the iron-based alloy according to a resist pattern obtained by the pattern forming method according to [11].
- a photosensitive resin composition having good adhesion to an ITO film and excellent in storage stability, and a photosensitive resin laminate using the same.
- the photosensitive resin composition of this invention and the photosensitive resin laminated body using the same are excellent in pattern formation, and can be used suitably for the etching use of an ITO film
- the alkali-soluble resin is a vinyl resin containing a carboxyl group, and is, for example, a copolymer such as (meth) acrylic acid, (meth) acrylic acid ester, (meth) acrylonitrile, (meth) acrylamide, and the like.
- the alkali-soluble resin preferably contains a carboxyl group and has an acid equivalent of 100 to 600.
- the acid equivalent refers to the mass of the alkali-soluble resin having 1 equivalent of a carboxyl group therein.
- the acid equivalent is more preferably 250 or more and 450 or less.
- the acid equivalent is preferably 100 or more from the viewpoint of improving development resistance and improving resolution and adhesion, and is preferably 600 or less from the viewpoint of improving developability and peelability.
- the acid equivalent is measured by a potentiometric titration method using a Hiranuma automatic titrator (COM-555) manufactured by Hiranuma Sangyo Co., Ltd., using 0.1 mol / L sodium hydroxide.
- the weight average molecular weight of the alkali-soluble resin is preferably 20,000 or more and 80,000 or less.
- the weight average molecular weight of the alkali-soluble resin is preferably 80,000 or less from the viewpoint of improving developability.
- the edge fuse property is a phenomenon in which the photosensitive resin composition layer protrudes from the end surface of the roll when the photosensitive resin laminate is wound into a roll.
- the cut chip property is the phenomenon that the chip flies when the unexposed film is cut with a cutter.
- the weight average molecular weight of the alkali-soluble resin is more preferably 20,000 or more and 60,000 or less, and further preferably 40,000 or more and 60,000 or less.
- the weight average molecular weight was determined by gel permeation chromatography (GPC) manufactured by JASCO Corporation (pump: Gulliver, PU-1580 type, column: Shodex (registered trademark) manufactured by Showa Denko KK (KF-807, KF-806M). , KF-806M, KF-802.5) in series, moving bed solvent: tetrahydrofuran, polystyrene standard sample (use of calibration curve by Shodex STANDARD SM-105 manufactured by Showa Denko KK) as polystyrene conversion.
- the alkali-soluble resin can be obtained by copolymerizing one or more monomers from the following two types of monomers.
- the first monomer is a carboxylic acid or acid anhydride having one polymerizable unsaturated group in the molecule.
- examples include (meth) acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, maleic anhydride, and maleic acid half ester.
- (meth) acrylic acid is particularly preferable.
- (meth) acryl refers to acryl and / or methacryl. The same applies hereinafter.
- the second monomer is a non-acidic monomer having at least one polymerizable unsaturated group in the molecule.
- methyl (meth) acrylate, n-butyl (meth) acrylate, styrene, and benzyl (meth) acrylate are preferable.
- Benzyl (meth) acrylate is preferred from the viewpoint of floating the bottom of the resist foot after development.
- the copolymerization ratio of the first monomer and the second monomer is preferably 10 to 60% by mass for the first monomer and 40 to 90% by mass for the second monomer. More preferably, the first monomer is 15 to 35% by mass, and the second monomer is 65 to 85% by mass.
- Preferred combinations of the first monomer and the second monomer include the following combinations.
- the blending amount of the photosensitive resin composition of the alkali-soluble polymer is in the range of 40 to 90% by mass, preferably 50 to 70% by mass when the total solid content of the photosensitive resin composition is 100% by mass. %. From the viewpoint of edge fuse property, it is 40% by mass or more, and from the viewpoint of development time, it is 70% by mass or less.
- At least one terminal ethylenically unsaturated group is a photopolymerizable monomer, and specific examples thereof include polypropylene glycol di (meth) acrylate, polyethylene Glycol (meth) acrylate, 2-di (p-hydroxyphenyl) propane (meth) acrylate, glycerol tri (meth) acrylate trimethylol tri (meth) acrylate, polyoxypropyltrimethylolpropane tri (meth) acrylate, polyoxyethyl Trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, trimethylpropanetriglycidyl ether tri (meth) acrylate, vinyl
- the compounding amount of the compound having an ethylenically unsaturated double bond is 5 to 50% by mass when the total solid content of the photosensitive resin composition is 100% by mass. From the viewpoint of sensitivity, resolution, and adhesiveness, it is 5% by mass or more, while from the viewpoint of suppressing cold flow and delayed peeling of the cured resist, it is 60% by mass or less, preferably 25 to 45% by mass. is there.
- (C) photopolymerization initiator
- the content of (C) the photopolymerization initiator is in the range of 0.1 to 20% by mass, and the preferred range is 0.5 to 10% by mass. From the viewpoint of obtaining sufficient sensitivity, it is preferably 0.1% by mass or more. On the other hand, from the viewpoint of sufficiently transmitting light to the bottom of the resist and obtaining good high resolution, it is 20% by mass or less.
- Photoinitiators include 2-ethylanthraquinone, octaethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-chloro Anthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone Quinones such as 2,3-dimethylanthraquinone and 3-chloro-2-methylanthraquinone, aromatic ketones such as benzophenone, Michler's ketone 4,4′-bis (dimethylamino) benzophenone, 4,
- the combination of the above-mentioned lophine dimer and Michler's ketone 4,4′-bis (dimethylamino) benzophenone or 4,4′-bis (diethylamino) benzophenone is a preferable combination from the viewpoints of sensitivity and resolution.
- the amount of the lophine dimer can be appropriately adjusted according to the sensitivity and the development aggregation property.
- 2- (o-chlorophenyl) -4,5-diphenylimidazolyl dimer it is preferably 1% by mass or more from the viewpoint of sensitivity, and preferably 5% by mass or less from the viewpoint of aggregation. More preferably, it is 2 to 4% by mass.
- the amount of 4,4′-bis (diethylamino) benzophenone can be appropriately adjusted in consideration of sensitivity, rectangularity of the resist pattern, and light transmittance at the exposure wavelength.
- it is preferably 0.05% by mass or less in consideration of pattern adhesion and rectangularity. From the viewpoint of sensitivity, 0.01% by mass or more is preferable.
- An epoxy silane compound is an organosilicon compound having both an epoxy group reactively bonded to an organic material and a hydrolyzable alkoxy group reactively bonded to an inorganic material in the molecule, and from the viewpoint of adhesion,
- Specific examples include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxymethyltrimethoxysilane, 3-glycidoxyethyltrimethoxysilane, 3-glycidoxypropyltrimethoxy.
- Silane 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltripropoxysilane, 3-glycidoxypropyltributoxysilane, 3-glycidoxypropyltripentoxysilane, 3-glycidylmethyltrimethoxysilane Examples include 3-glycidylethyltrimethoxysilane, 3-glycidylpropyltrimethoxysilane, and the like.
- the photosensitive resin composition included in the present invention contains 0.005 to 1.0% by mass of the (E) thiol compound, and this can be expected to improve the storage stability.
- the storage stability means that there is no change with time in the contrast when the photosensitive resin laminate is exposed.
- Examples of the compound in which a mercapto group is bonded to a carbon atom having no aromaticity include, for example, octanethiol, hexanedithiol, decanedithiol, 1,4-butanediol bisthiopropionate, 1,4-butanediol bisthioglyco Rate, ethylene glycol bisthioglycolate, ethylene glycol bisthiopropionate, trimethylolpropane, tristhioglycolate, trimethylolpropane tristhiopropionate, trimethylolpropane tris (3-mercaptobutyrate), pentaerythritol tetrakis Thioglycolate, pentaerythritol tetrakisthiopropionate, trimercaptopropionate tris, (2-hydroxyethyl) isocyanurate, pentaerythritol tetrakis-3 It can be mentioned
- Examples of the compound in which a mercapto group is bonded to an aromatic group include the following general formula (I): ⁇ In the formula, R 1 is a group having aromaticity. ⁇ The thiol compound represented by this is mentioned.
- Examples of the aromatic group include phenyl, naphthyl, anthracenyl, imidazolyl, triazoyl, tetrazoyl, benzoimidazolyl, benzotriazoyl, benzotetrazoyl, oxazoyl, benzox
- Examples include zoyl group, thiazoyl group, benzothiazoyl group, thiadiazoyl group, triazine group, pyridyl group, pyrrolyl group, furyl group, thienyl group, and quinolyl group.
- R 1 is preferably a heterocyclic compound having aromaticity from the viewpoint of storage stability.
- the resolution is a negative for resolution evaluation, using a negative in which the line width of the line and the space width are alternately arranged at an equal width of 10 ⁇ m to 50 ⁇ m. The smallest one.
- Examples of the thiol compound represented by the general formula (I) include 2-chlorothiophenol, 3-chlorothiophenol, 4-chlorothiophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, 2-bromothiophenol, 3-bromothiophenol, 4-bromothiophenol, 2-fluorothiophenol, 3-fluorothiophenol, 4-fluorothiophenol, 1,2-dimercaptobenzene, 1,3-dimercaptobenzene, 1,4-dimercaptobenzene, 2,3-dimethylthiophenol, 2,4-dimethylthiophenol, 2,5-dimethylthiophenol, 2,6-dimethylthiophenol, 2, 3-difluorothiophenol, 2,4-difluorothiophenol, 2,5 -Difluorothiophenol, 2,6-difluorothiophenol, 2,3-dichlorothiophenol, 2,4-dichloro
- the thiol compound represented by the general formula (I) is more preferably the following general formula (II): ⁇ In the formula, R 2 is a kind of group selected from the group consisting of SH, SR 3 OR 4 and NR 3 R 4 , and R 3 and R 4 are each independently H, C 1-12 It is a kind of group selected from the group consisting of an alkyl group and an aryl group. ⁇ It is a compound represented.
- Examples of the thiol compound represented by the general formula (II) include 2,4,6-trimercapto-s-triazine, 2-di-n-butylamino-4,6-dimercapto-s-triazine, 2- Anilino-4,6-dimercapto-s-triazine, 6-diallylamino-1,3,5-triazine-2,4-dithiol, 2-dicyclohexylamino-4,6-dimercapto-s-triazine, dimethylamino-1 3,5-triazine-2,4-dithiol.
- thiol compound represented by the above general formula (I) the following general formula (III): ⁇
- R 5 is a kind selected from the group consisting of an alkyl group having 1 to 3 carbon atoms, an alkoxy group having 1 to 3 carbon atoms, an alkylthio group having 1 to 3 carbon atoms, SH, and NR 6 R 7 .
- R 6 and R 7 is independently a group selected from the group consisting of H, an alkyl group having 1 to 12 carbon atoms, and an aryl group.
- the effect of imparting storage stability can also be expected.
- Examples of the thiol compound represented by the general formula (III) include 5-methyl-2-mercapto-1,3,4-thiadiazole, 5-ethyl-2-mercapto-1,3,4-thiadiazole, 5 N-propyl-2-mercapto-1,3,4-thiadiazole, 5-isopropyl-2-mercapto-1,3,4-thiadiazole, 5-methoxy-2-mercapto-1,3,4-thiadiazole, 5 -Ethoxy-2-mercapto-1,3,4-thiadiazole, 5-n-propyloxy-2-mercapto-1,3,4-thiadiazole, 5-isopropyloxy-2-mercapto-1,3,4-thiadiazole 5-methylthio-2-mercapto-1,3,4-thiadiazole, 5-ethylthio-2-mercapto-1,3,4-thiadiazole 5-n-propylthio-2-mercapto-1,3,4-thiadiazole, 5-isopropylthio-2-mercap
- the amount of the photosensitive resin composition of the thiol compound represented by the general formula (I) is 0.005 to 1.0 mass when the total solid content of the photosensitive resin composition is 100 mass%. %, Preferably 0.01 to 0.1% by mass, more preferably 0.03 to 0.08% by mass. From the viewpoint of maintaining storage stability, it is 0.005% by mass or more, and from the viewpoint of resolution, it is 1.0% by mass or less.
- the photosensitive resin composition according to the present invention may contain a leuco dye, a fluoran dye, or a coloring substance.
- a leuco dye By including these dyes, the exposed portion is colored, which is preferable in terms of visibility.
- the inclusion of these dyes is advantageous when the inspection machine or the like reads the alignment marker for exposure when the contrast between the exposed and unexposed areas is higher.
- the leuco dye include tris (4-dimethylaminophenyl) methane [leucocrystal violet] and bis (4-dimethylaminophenyl) phenylmethane [leucomalachite green].
- the content is preferably 0.1 to 10% by mass in the photosensitive resin composition.
- the content is preferably 0.1% by mass or more from the viewpoint of the contrast between the exposed part and the unexposed part, and is preferably 10% by mass or less from the viewpoint of maintaining storage stability.
- the coloring substance include fuchsin, phthalocyanine green, auramine base, paramadienta, crystal violet, methyl orange, Nile blue 2B, Victoria blue, malachite green (Eizen (registered trademark) MALACHITE GREEN manufactured by Hodogaya Chemical Co., Ltd.), basic blue. 20, Diamond Green (Eizen (registered trademark) DIAMOND GREEN GH manufactured by Hodogaya Chemical Co., Ltd.).
- the addition amount is preferably 0.001 to 1% by mass in the photosensitive resin composition.
- a content of 0.001% by mass or more is preferable from the viewpoint of improving handleability, and a content of 1% by mass or less is preferable from the viewpoint of maintaining storage stability.
- the photosensitive resin composition may contain an N-aryl- ⁇ -amino acid compound from the viewpoint of sensitivity.
- N-aryl- ⁇ -amino acid compound N-phenylglycine is preferable.
- the content is preferably 0.01% by mass or more and 1% by mass or less.
- the photosensitive resin composition may contain a halogen compound.
- the halogen compound include amyl bromide, isoamyl bromide, isobutylene bromide, ethylene bromide, diphenylmethyl bromide, benzyl bromide, methylene bromide, tribromomethylphenyl sulfone, carbon tetrabromide, tris (2 , 3-dibromopropyl) phosphate, trichloroacetamide, amyl iodide, isobutyl iodide, 1,1,1-trichloro-2,2-bis (p-chlorophenyl) ethane, chlorinated triazine compounds, among others. Tribromomethylphenylsulfone is preferably used. When the halogen compound is contained, the content is 0.01 to 3% by mass in the photosensitive resin composition.
- the photosensitive resin composition is at least one selected from the group consisting of radical polymerization inhibitors, benzotriazoles, and carboxybenzotriazoles. You may further contain a compound more than a seed
- the radical polymerization inhibitor include p-methoxyphenol, hydroquinone, pyrogallol, naphthylamine, tert-butylcatechol, cuprous chloride, 2,6-di-tert-butyl-p-cresol, 2,2′-methylenebis. (4-methyl-6-tert-butylphenol), 2,2′-methylenebis (4-ethyl-6-tert-butylphenol), nitrosophenylhydroxyamine aluminum salt, diphenylnitrosamine and the like.
- benzotriazoles include 1,2,3-benzotriazole, 1-chloro-1,2,3-benzotriazole, bis (N-2-ethylhexyl) aminomethylene-1,2,3-benzotriazole, Examples thereof include bis (N-2-ethylhexyl) aminomethylene-1,2,3-tolyltriazole, bis (N-2-hydroxyethyl) aminomethylene-1,2,3-benzotriazole, and the like.
- carboxybenzotriazoles include 4-carboxy-1,2,3-benzotriazole, 5-carboxy-1,2,3-benzotriazole, and N- (N, N-di-2-ethylhexyl) aminomethylene.
- Examples thereof include carboxybenzotriazole, N- (N, N-di-2-hydroxyethyl) aminomethylenecarboxybenzotriazole, N- (N, N-di-2-ethylhexyl) aminoethylenecarboxybenzotriazole and the like.
- the total content of the radical polymerization inhibitor, benzotriazoles, and carboxybenzotriazoles is preferably 0.01 to 3% by mass, more preferably 0.05 to 1%, based on the entire photosensitive resin composition. % By mass.
- the content is preferably 0.01% by mass or more from the viewpoint of imparting storage stability to the photosensitive resin composition, and is 3% by mass or less from the viewpoint of maintaining sensitivity and suppressing decolorization of the dye. More preferred.
- the photosensitive resin composition may contain a plasticizer as necessary.
- plasticizers include polyethylene glycol, polypropylene glycol, polyoxypropylene polyoxyethylene ether, polyoxyethylene monomethyl ether, polyoxypropylene monomethyl ether, polyoxyethylene polyoxypropylene monomethyl ether, and polyoxyethylene monoethyl.
- Glycols and esters such as ether, polyoxypropylene monoethyl ether, polyoxyethylene polyoxypropylene monoethyl ether, phthalic acid esters such as diethyl phthalate, o-toluenesulfonic acid amide, p-toluenesulfonic acid amide, citric acid Tributyl, triethyl citrate, acetyl triethyl citrate, acetyl tri-n-propyl citrate, tri-n-acetyl citrate Such as chill, and the like.
- the content of the plasticizer is preferably 5 to 50% by mass, more preferably 5 to 30% by mass in the photosensitive resin composition.
- the content is preferably 5% by mass or more from the viewpoint of suppressing development time delay and imparting flexibility to the cured film, and is preferably 50% by mass or less from the viewpoint of suppressing insufficient curing and cold flow. .
- Photosensitive resin composition preparation solution examples include ketones typified by methyl ethyl ketone (MEK), alcohols typified by methanol, ethanol, and isopropanol.
- MEK methyl ethyl ketone
- the solvent is preferably added to the photosensitive resin composition so that the viscosity of the solution of the photosensitive resin composition applied on the support film is 500 to 4,000 mPa ⁇ s at 25 ° C.
- the photosensitive resin laminate includes a photosensitive resin layer made of a photosensitive resin composition and a support film. If necessary, you may have a protective layer on the surface on the opposite side to the support film side of the photosensitive resin layer.
- the support film used here is preferably a transparent film that transmits light emitted from the exposure light source.
- support films examples include polyethylene terephthalate film, polyvinyl alcohol film, polyvinyl chloride film, vinyl chloride copolymer film, polyvinylidene chloride film, vinylidene chloride copolymer film, polymethyl methacrylate copolymer film, Examples include polystyrene film, polyacrylonitrile film, styrene copolymer film, polyamide film, and cellulose derivative film. These films can be stretched if necessary. The haze is preferably 5 or less. A thinner film is advantageous in terms of image forming property and economic efficiency, but a film having a thickness of 10 to 30 ⁇ m is preferably used in order to maintain the strength.
- the protective layer used in the photosensitive resin laminate is that the protective layer is sufficiently smaller than the support film in terms of adhesion to the photosensitive resin layer and can be easily peeled off.
- a polyethylene film or a polypropylene film can be preferably used as the protective layer.
- a film having excellent releasability disclosed in JP-A-59-202457 can be used.
- the thickness of the protective layer is preferably 10 to 100 ⁇ m, more preferably 10 to 50 ⁇ m.
- the thickness of the photosensitive resin layer in the photosensitive resin laminate varies depending on the application, but is preferably 5 to 100 ⁇ m, more preferably 7 to 60 ⁇ m. The thinner the resolution, the higher the resolution, and the thicker the film strength. .
- a known method can be employed as a method for producing a photosensitive resin laminate by sequentially laminating a support film, a photosensitive resin layer, and, if necessary, a protective layer.
- the photosensitive resin composition used for the photosensitive resin layer is mixed with a solvent that dissolves them to form a uniform solution, which is first applied onto the support film using a bar coater or a roll coater, and then dried to form the support film.
- a photosensitive resin layer made of a photosensitive resin composition can be laminated thereon.
- the thickness of the photosensitive resin layer after drying is preferably 1 to 100 ⁇ m, more preferably 2 to 50 ⁇ m, and still more preferably 3 to 15 ⁇ m.
- the thickness is preferably 3 ⁇ m or more from the viewpoint of tent properties, and is preferably 15 ⁇ m or less from the viewpoint of resolution.
- a photosensitive resin laminate can be produced by laminating a protective layer on the photosensitive resin layer.
- the photosensitive resin laminated body of this invention can be used suitably for the etching (chemical milling) of an iron-type alloy besides ITO.
- iron-based alloys include alloys such as iron-chromium-nickel, 42 alloy, and SUS.
- the iron-based alloy can be used for a lead frame, an electronic device casing, and the like.
- Base material The ITO film is a thin film of indium and tin oxide and is used as a transparent electrode.
- a glass substrate or a transparent resin substrate such as polyethylene terephthalate (PET), polyethylene terephthalate (PEN), or polycarbonate (PC) is formed by a method such as sputtering or vapor deposition.
- the film thickness is generally 20 nm to 300 nm and is appropriately adjusted according to the application.
- Examples of the compound used as a transparent electrode similar to ITO include IZO and SnO 2 .
- the photosensitive resin layer of the photosensitive resin laminate is heated and pressure-bonded to the glass substrate surface with a laminator and laminated.
- the heating temperature at this time is generally 40 to 160 ° C.
- substrate of the obtained resist pattern improves by performing this thermocompression bonding twice or more.
- a two-stage laminator provided with two rolls may be used for pressure bonding, or it may be repeatedly pressed through the roll several times.
- the mask film which has a desired wiring pattern is stuck on a support body, and it exposes using an active light source.
- the active light source used include a high pressure mercury lamp, an ultrahigh pressure mercury lamp, an ultraviolet fluorescent lamp, a carbon arc lamp, and a xenon lamp.
- a parallel light source In order to obtain a finer resist pattern, it is more preferable to use a parallel light source.
- exposure proximity exposure may be performed in a state where the photomask is floated by several tens to several hundreds of um from the support.
- the support on the photosensitive resin layer is peeled off, and then the unexposed portion is developed and removed using a developer of an alkaline aqueous solution to obtain a resist image.
- an aqueous solution of Na 2 CO 3 or K 2 CO 3 is used as the alkaline aqueous solution.
- the alkaline aqueous solution is appropriately selected according to the characteristics of the photosensitive resin layer, but a Na 2 CO 3 aqueous solution having a concentration of about 0.2 to 2% by mass and about 20 to 40 ° C. is generally used.
- a surface active agent, an antifoaming agent, a small amount of an organic solvent for promoting development, and the like may be mixed in the alkaline aqueous solution.
- An amine-based alkaline aqueous solution such as a tetraammonium hydroxide (TMAH) aqueous solution can also be used in consideration of the influence on the substrate.
- the density can be appropriately selected according to the developing speed.
- a heating step at about 100 to 300 ° C. can be further performed in some cases. By carrying out this heating step, chemical resistance can be further improved.
- a hot-air, infrared, or far-infrared heating furnace can be used.
- the ITO film of the substrate exposed by development is etched.
- the conductor pattern is usually formed using an acidic etching solution such as cupric chloride-hydrochloric acid aqueous solution or ferric chloride-hydrochloric acid aqueous solution at 30 to 60 ° C.
- an oxalic acid aqueous solution can be used depending on the type of the ITO film or the base.
- the resist pattern is stripped from the substrate using an aqueous solution having alkalinity stronger than the developer.
- the alkaline aqueous solution for peeling is not particularly limited, but an aqueous solution of NaOH or KOH having a concentration of about 2 to 5% by mass and a temperature of about 40 to 70 ° C. is generally used. A small amount of a water-soluble solvent can also be added to the stripping solution.
- Table 2 below shows the names of the material components in the photosensitive resin composition preparation liquid indicated by abbreviations in Table 1.
- Comparative Example 1 is a composition that does not contain (D) an epoxy silane compound
- Comparative Example 2 is a composition that does not contain (E) a thiol compound
- Comparative Example 3 contains (D) an epoxy silane compound. It is a composition containing excess.
- Etching is performed by immersing the above-mentioned cured resist pattern-attached glass substrate in a ferric chloride-hydrochloric acid aqueous solution (ADEKA Co., Ltd., Adeka Kermica ITO-400) heated to 50 ° C., and etching the glass substrate. Was washed with water.
- a ferric chloride-hydrochloric acid aqueous solution (ADEKA Co., Ltd., Adeka Kermica ITO-400) heated to 50 ° C., and etching the glass substrate. was washed with water.
- the width between lines of the cured resist pattern was measured after development. Furthermore, the line width of the formed circuit pattern after etching was measured.
- the side etch width was calculated by comparing the line width of the cured resist pattern with the line width of the formed circuit pattern after etching. According to the value of side etch width, it was ranked as follows: A: Side etch width value is 8.5 ⁇ m or less; ⁇ : Side etch width value is more than 8.5 ⁇ m and not more than 12.0 ⁇ m; X: The value of the side etch width exceeds 12.0 ⁇ m.
- ⁇ Storage stability evaluation> The polyethylene film is peeled from the photosensitive resin laminate, and after exposure for 15 minutes after exposure, the exposed portion is exposed from the polyethylene terephthalate side using a spectrometer (Nippon Denshoku Industries Co., Ltd., NF333). The contrast of the unexposed area was measured. In addition, the contrast of the same photosensitive resin laminate that was stored for 3 days at a temperature of 23 ° C. and a humidity of 75% was measured according to the same procedure, and ranked according to the difference as follows: A: Contrast difference is 0.8 or less; ⁇ : Contrast difference is more than 0.8 and 1.5 or less; X: Contrast difference exceeds 1.5.
- Evaluation Results Table 1 shows the evaluation results of Examples 1 to 10 and Comparative Examples 1 to 3.
- the present invention relates to a photosensitive resin composition useful for pattern formation such as forming an electrode on an ITO film or SnO 2 film on a glass substrate used as a display material for a flat panel display, and a photosensitive resin laminate. It is useful when forming ITO electrodes in the production of display materials for flat panel displays.
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Abstract
Description
まずドライフィルムレジストからポリエチレンフィルム等の保護層を剥離する。次いで、ラミネーターを用いて銅張り積層板等の基板上に、該基板、感光性樹脂層、支持体の順序になるよう、感光性樹脂層及び支持体を積層する。次いで、配線パターンを有するフォトマスクを介して、該感光性樹脂層を露光することによって、露光部分を重合硬化させる。次いでポリエチレンテレフタレート等からなる支持体を剥離する。次いで、弱アルカリ性を有する水溶液等の現像液により感光性樹脂層の未露光部分を溶解又は分散除去して、基板上にレジストパターンを形成させる。次いで、形成されたレジストパターンを保護マスクとして公知のエッチング処理又はパターンめっき処理を行う。最後に、該レジストパターンを基板から剥離して導体パターンを有する基板、すなわちプリント配線板を製造する。
しかしながら、従来のドライフィルムレジストでは、上記の電極形成において基材が、銅等の一般的な金属と異なり平滑なITO膜、SnO2膜等であるために密着性が悪い。さらに、エッチング時には強酸性に晒されるため、基材からレジストが剥がれ、サイドエッチングが進行し、高い精度のエッチング加工ができないという問題がある。これを克服するためにシランカップリング剤のような密着助剤が導入されている。
また、以下の特許文献2には、1分子内に2個以上のメルカプト基を有する多官能チオール化合物0.001~5質量部を含む感光性樹脂組成物が記載されているが、その用途として、銅基材に対する密着助剤としての効果が開示してあるだけで、ITO膜との密着性や保存安定性向上効果については何ら開示されていない。
すなわち、本本発明は以下の通りのものである。
[3]前記(E)一般式(I)で表されるチオール化合物が、該式中、R1が芳香族性を有する複素環化合物である、前記[2]に記載の感光性樹脂組成物。
[11]前記[8]に記載の感光性樹脂積層体を鉄系合金上にラミネートするラミネート工程、該積層体に露光を行う露光工程、及び該露光された積層体に現像を行う現像工程を含むことを特徴とするレジストパターン形成方法。
[12]
前記[11]に記載のパターン形成方法で得られたレジストパターンに従って前記鉄系合金をエッチングすることを特徴とする鉄系合金構造体の製造方法。
<(A)アルカリ可溶性樹脂>
アルカリ可溶性樹脂とは、カルボキシル基を含有したビニル系樹脂のことであり、例えば、(メタ)アクリル酸、(メタ)アクリル酸エステル、(メタ)アクリロニトリル、(メタ)アクリルアミド等の共重合体である。
(A)アルカリ可溶性樹脂は、カルボキシル基を含有し、酸当量が100~600であることが好ましい。酸当量とは、その中に1当量のカルボキシル基を有するアルカリ可溶性樹脂の質量を言う。
酸当量は、より好ましくは250以上450以下である。酸当量は、現像耐性が向上し、解像度及び密着性が向上する点から、100以上が好ましく、現像性及び剥離性が向上する点から600以下が好ましい。酸当量の測定は、平沼産業(株)製平沼自動滴定装置(COM-555)を使用し、0.1mol/Lの水酸化ナトリウムを用いて電位差滴定法により行われる。
アルカリ可溶性樹脂は、下記の2種類の単量体の中より、各々一種又はそれ以上の単量体を共重合させることにより得られる。
第二の単量体は、非酸性で、分子中に重合性不飽和基を少なくとも一個有する単量体である。例えば、メチル(メタ)アクリレート、エチル(メタ)アクリレート、n-プロピル(メタ)アクリレート、iso-プロピル(メタ)アクリレート、n-ブチル(メタ)アクリレート、iso-ブチル(メタ)アクリレート、tert-ブチル(メタ)アクリレート、2-ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレート、ベンジル(メタ)アクリレート、ビニルアルコールのエステル類、例えば、酢酸ビニル、(メタ)アクリロニトリル、スチレン、及びスチレン誘導体が挙げられる。中でも、メチル(メタ)アクリレート、n-ブチル(メタ)アクリレート、スチレン、ベンジル(メタ)アクリレートが好ましい。現像後のレジストフット部の裾浮きの観点からベンジル(メタ)アクリレートが好ましい。
第一の単量体と第二の単量体の好ましい組み合わせとしては以下の様な組み合わせを挙げることができる。すなわち、アクリル酸ブチル、メタクリル酸メチル、メタクリル酸の共重合体、スチレン、メタクリル酸メチル、メタクリル酸の共重合体、スチレン、メタクリル酸ベンジル、メタクリル酸の共重合体、メタクリル酸ベンジル、メタクリル酸の共重合体、メタクリル酸ベンジル、アクリル酸―2-エチルヘキシル、メタクリル酸の共重合体などが挙げられる。
(A)アルカリ可溶性高分子の感光性樹脂組成物の配合量は感光性樹脂組成物の全固形分質量100質量%とした場合の40~90質量%の範囲であり、好ましくは50~70質量%である。エッジフューズ性の観点から40質量%以上であり、現像時間の観点から70質量%以下である。
(B)エチレン性不飽和二重結合を有する化合物としては、少なくとも一つの末端エチレン性不飽和基を光重合性モノマーであって、具体的な例としては、ポリプロピレングリコールジ(メタ)アクリレート、ポリエチレングリコール(メタ)アクリレート、2-ジ(p-ヒドロキシフェニル)プロパン(メタ)アクリレート、グリセロールトリ(メタ)アクリレートトリメチロールトリ(メタ)アクリレート、ポリオキシプロピルトリメチロールプロパントリ(メタ)アクリレート、ポリオキシエチルトリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、トリメチルプロパントリグリシジルエーテルトリ(メタ)アクリレート、ビスフェノールAエチレングリコール付加ジ(メタ)アクリレート、フェノキシポリエチレングリコール(メタ)アクリレート、ノニルフェノキシポリエチレングリコール(メタ)アクリレート等が挙げられる。
また、ウレタン化合物も挙げられ、例えばヘキサメチレンジイソシアネート、トリレンジイソシアネートがある。これらは、単独で使用しても、2種類以上併用しても構わない。
(C)光重合開始剤としては、一般に知られているものが使用できる。(C)光重合開始剤の含有量は、0.1~20質量%の範囲であり、好ましい範囲は0.5~10質量%である。十分な感度を得るという観点から、0.1質量%以上が好ましく、一方、レジスト底面にまで光を充分に透過させ、良好な高解像性を得るという観点から、20質量%以下である。
光重合開始剤としては、2-エチルアントラキノン、オクタエチルアントラキノン、1,2-ベンズアントラキノン、2,3-ベンズアントラキノン、2-フェニルアントラキノン、2,3-ジフェニルアントラキノン、1-クロロアントラキノン、2-クロロアントラキノン、2-メチルアントラキノン、1,4-ナフトキノン、9,10-フェナントラキノン、2-メチル-1,4-ナフトキノン、9,10-フェナントラキノン、2-メチル-1,4-ナフトキノン、2,3-ジメチルアントラキノン、3-クロロ-2-メチルアントラキノンなどのキノン類、芳香族ケトン類、例えば、ベンゾフェノン、ミヒラーズケトン 4,4´-ビス(ジメチルアミノ)ベンゾフェノン、4,4´-ビス(ジエチルアミノ)ベンゾフェノン、ベンゾイン又はベンゾインエーテル類、ベンゾイン、ベンゾインエチルエーテル、ベンゾインフェニルエーテル、メチルベンゾイン、エチルベンゾイン、ジアルキルケタール類、ベンジルジメチルケタール、ベンジルジエチルケタール、チオキサントン類、ジエチルチオキサントン、クロルチオキサントン、ジアルキルアミノ安息香酸エステル類、ジメチルアミノ安息香酸エチル、オキシムエステル類、1-フェニル-1,2-プロパンジオン-2-O-ベンゾイルオキシム、1-フェニル-1,2-プロパンジオン-2-(O-エトキシカルボニル)オキシム、2-(o-クロロフェニル)-4,5-ジフェニルイミダゾリル二量体、2-(o-クロロフェニル)-4,5-ビス-(m-メトキシフェニル)イミダゾリル二量体、2-(p-メトキシフェニル)-4,5-ジフェニルイミダゾリル二量体、アクリジン化合物、9-フェニルアクリジン、ピラゾリン類、1-フェニル-3-スチリル-5-フェニル-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-スチリル-5-フェニル-ピラゾリン、1-フェニル-3-(4-tert-ブチル-スチリル)-5-(4-tert-ブチル-フェニル)-ピラゾリンなどが挙げられる。これらの化合物は単独で使用しても、2種類以上併用しても構わない。
(D)エポキシシラン化合物とは、分子内に有機材料と反応結合するエポキシ基、及び無機材料と反応結合する加水分解性のアルコキシ基を同時に有する有機ケイ素化合物であり、中でも密着性の観点から、下記一般式(IV):
本発明に含まれる感光性樹脂組成物は、(E)チオール化合物を0.005~1.0質量%含有し、これによって保存安定性を向上させる効果が期待できる。本願において、保存安定性とは感光性樹脂積層体を露光した際のコントラストに、経時変化が無いことを意味する。
(E)チオール化合物としては、芳香族性を有しない炭素原子にメルカプト基が結合した化合物、芳香族性を有する基にメルカプト基が結合した化合物を挙げることができる。
芳香族性を有しない炭素原子にメルカプト基が結合した化合物としては、例えば、オクタンチオール、ヘキサンジチオール 、デカンジチオール 、1,4-ブタンジオールビスチオプロピオネート、1,4-ブタンジオールビスチオグリコレート、エチレングリコールビスチオグリコレート、エチレングリコールビスチオプロピオネート、トリメチロールプロパン、トリスチオグリコレート、トリメチロールプロパントリスチオプロピオネート、トリメチロールプロパントリス(3-メルカプトブチレート)、ペンタエリスリトールテトラキスチオグリコレート、ペンタエリスリトールテトラキスチオプロピオネート、トリメルカプトプロピオン酸トリス、(2-ヒドロキシエチル)イソシアヌレート、ペンタエリスリトールテトラキス-3-メルカプトブチレートを挙げることができる。
芳香族性を有する基にメルカプト基が結合した化合物としては、下記一般式(I):
上記芳香族性を有する基としては、例えば、フェニル基、ナフチル基、アントラセニル基、イミダゾイル基、トリアゾイル基、テトラゾイル基、ベンゾイミダゾイル基、ベンゾトリアゾイル基、ベンゾテトラゾイル基、オキサゾイル基、ベンゾオキサゾイル基、チアゾイル基、ベンゾチアゾイル基、チアジアゾイル基、トリアジン基、ピリジル基、ピロリル基、フリル基、チエニル基、キノリル基が挙げられる。
このような上記一般式(I)で表されるチオール化合物としては、例えば、2-クロロチオフェノール、3-クロロチオフェノール、4-クロロチオフェノール、2-アミノチオフェノール、3-アミノチオフェノール、4-アミノチオフェノール、2-ブロモチオフェノール、3-ブロモチオフェノール、4-ブロモチオフェノール、2-フロロチオフェノール、3-フロロチオフェノール、4-フロロチオフェノール、1,2-ジメルカプトベンゼン、1,3-ジメルカプトベンゼン、1,4-ジメルカプトベンゼン、2,3-ジメチルチオフェノール、2,4-ジメチルチオフェノール、2,5-ジメチルチオフェノール、2,6-ジメチルチオフェノール、2,3-ジフルオロチオフェノール、2,4-ジフルオロチオフェノール、2,5-ジフルオロチオフェノール、2,6-ジフルオロチオフェノール、2,3-ジクロロチオフェノール、2,4-ジクロロチオフェノール、2,5-ジクロロチオフェノール、2,6-ジクロロチオフェノール、3,4-ジメトキシチオフェノール、3-クロロ-4-フルオロチオフェノール、4-イソプロピルチオフェノール、3,5-(トリフルオロメチル)ベンゼンチオール、2-メルカプト安息香酸、2-アミノ-4-クロロチオフェノール、4-アセトアミドチオフェノール、2-クロロ-4-フルオロチオフェノール、4-クロロ-2,5-ジメチルチオフェノール、1,3,5-トリメルカプトベンゼン、5-ブロモ-1,3―ジメルカプトベンゼン2,3,5,6-テトラフルオロチオフェノール、2-メルカプトピリジン、3-メルカプトピリジン、4-メルカプトピリジン、2-メルカプトピリジン-N-オキシド、5-メトキシ-2-ベンズイミダゾールチオール、5-アミノ-2-メルカプトベンズイミダゾール、2-メルカプト-1-メチルイミダゾール、2-メルカプト-5-メチルベンズイミダゾール、2-メルカプト-5-ニトロベンズイミダゾール、4-ヒドロキシ-2-メルカプト-6-(トリフルオロメチル)ピリミジン、4-メルカプトピラゾロ[3,4d]ピリミジン、4,6-ジアミノ-2-メルカプトピリミジン、4,6-ジヒドロキシ-2-メルカプトピリミジン、2-メルカプト-4,6-ジメチルピリミジン、5-フェニル-1,3,4-オキサジアゾール-2-チオール、4,5-ジフェニル-2-メルカプトオキサゾール、2‐ベンゾオキサゾールチオール、3-フェニル-1,2,4-トリアゾール-5-チオール、5-メルカプト-1-メチルテトラゾール、1-フェニル-5-メルカプト一1H-テトラゾール、2-メルカプトイミダゾリンが挙げられる。
(E)上記一般式(I)で表されるチオール化合物の感光性樹脂組成物の配合量は感光性樹脂組成物の全固形分質量100質量%とした場合、0.005~1.0質量%の範囲であり、好ましくは0.01~0.1質量%の範囲であり、より好ましくは0.03~0.08質量%である。保存安定性を維持する観点から0.005質量%以上であり、一方、解像度の観点から1.0質量%以下である。
本願発明に係る感光性樹脂組成物は、ロイコ染料、又はフルオラン染料や着色物質を含有してもよい。これらの染料を含むことにより露光部分が発色するので視認性の点で好ましい。また、これらの染料を含むことは、検査機などが露光のための位置合わせマーカーを読み取る場合、露光部と未露光部のコントラストが大きい方が認識しやすく有利である。
ロイコ染料としては、トリス(4-ジメチルアミノフェニル)メタン[ロイコクリスタルバイオレット]、ビス(4-ジメチルアミノフェニル)フェニルメタン[ロイコマラカイトグリーン]が挙げられる。中でも、コントラストが良好となる観点から、ロイコ染料としては、ロイコクリスタルバイオレットを用いることが好ましい。ロイコ染料を含有する場合の含有量は、感光性樹脂組成物中に0.1~10質量%含むことが好ましい。当該含有量は、露光部分と未露光部分のコントラストの観点から、0.1質量%以上が好ましく、また、保存安定性を維持という観点から、10質量%以下が好ましい。
着色物質としては、例えば、フクシン、フタロシアニングリーン、オーラミン塩基、パラマジエンタ、クリスタルバイオレット、メチルオレンジ、ナイルブルー2B、ビクトリアブルー、マラカイトグリーン(保土ヶ谷化学(株)製 アイゼン(登録商標) MALACHITE GREEN)、ベイシックブルー20、ダイアモンドグリーン(保土ヶ谷化学(株)製 アイゼン(登録商標) DIAMOND GREEN GH)が挙げられる。着色物質を含有する場合の添加量は、感光性樹脂組成物中に0.001~1質量%含むことが好ましい。0.001質量%以上の含有量は、取扱い性向上という観点から、そして1質量%以下の含有量は、保存安定性を維持するという観点から、好ましい。
ラジカル重合禁止剤としては、例えば、p-メトキシフェノール、ハイドロキノン、ピロガロール、ナフチルアミン、tert-ブチルカテコール、塩化第一銅、2,6-ジ-tert-ブチル-p-クレゾール、2,2’-メチレンビス(4-メチル-6-tert-ブチルフェノール)、2,2’-メチレンビス(4-エチル-6-tert-ブチルフェノール)、ニトロソフェニルヒドロキシアミンアルミニウム塩、ジフェニルニトロソアミンなどが挙げられる。
カルボキシベンゾトリアゾール類としては、例えば、4-カルボキシ-1,2,3-ベンゾトリアゾール、5-カルボキシ-1,2,3-ベンゾトリアゾール、N-(N,N-ジ-2-エチルヘキシル)アミノメチレンカルボキシベンゾトリアゾール、N-(N,N-ジ-2-ヒドロキシエチル)アミノメチレンカルボキシベンゾトリアゾール、N-(N,N-ジ-2-エチルヘキシル)アミノエチレンカルボキシベンゾトリアゾールなどが挙げられる。
可塑剤の含有量としては、感光性樹脂組成物中に、5~50質量%含むことが好ましく、より好ましくは、5~30質量%である。当該含有量は、現像時間の遅延を抑え、硬化膜に柔軟性を付与するという観点から、5質量%以上が好ましく、一方、硬化不足やコールドフローを抑えるという観点から、50質量%以下が好ましい。
感光性樹脂組成物を溶解する溶剤としては、メチルエチルケトン(MEK)に代表されるケトン類、メタノール、エタノール又はイソプロパノールに代表されるアルコール類などが挙げられる。当該溶剤は、支持フィルム上に塗布する感光性樹脂組成物の溶液の粘度が25℃で500~4,000mPa・sとなるように、感光性樹脂組成物に添加することが好ましい。
感光性樹脂積層体は、感光性樹脂組成物からなる感光性樹脂層と支持フィルムを含む。必要により、感光性樹脂層の支持フィルム側とは反対側の表面に保護層を有してもよい。ここで用いられる支持フィルムとしては、露光光源から放射される光を透過する透明なものが望ましい。このような支持フィルムとしては、例えば、ポリエチレンテレフタレートフィルム、ポリビニルアルコールフィルム、ポリ塩化ビニルフィルム、塩化ビニル共重合体フィルム、ポリ塩化ビニリデンフィルム、塩化ビニリデン共重合フィルム、ポリメタクリル酸メチル共重合体フィルム、ポリスチレンフィルム、ポリアクリロニトリルフィルム、スチレン共重合体フィルム、ポリアミドフィルム、セルロース誘導体フィルムなどが挙げられる。これらのフィルムは、必要に応じて延伸されたものも使用可能である。ヘーズは5以下のものが好ましい。フィルムの厚みは、薄い方が画像形成性及び経済性の面で有利であるが、強度を維持するために10~30μmのものが好ましく用いられる。
乾燥後の感光性樹脂層の厚さは、1~100μmであることが好ましく、より好ましくは、2~50μm、さらに好ましくは、3~15μmである。当該厚さは、テント性の観点から、3μm以上が好ましく、解像性の観点から、15μm以下が好ましい。
次いで必要により、感光性樹脂層上に保護層をラミネートすることにより感光性樹脂積層体を作製することができる。
以下、本発明の感光性樹脂積層体を用いたITO電極の形成方法(パターン形成)について説明する。
尚、本発明の感光性樹脂積層体はITO以外にも鉄系合金のエッチング(ケミカルミリング)に好適に用いることができる。鉄系合金としては、鉄-クロム-ニッケルなどの合金、42アロイ、SUSなどを挙げることができる。鉄系合金はリードフレームや電子機器躯体などに使用されうる。
(基材)
ITO膜とは、インジウムとスズの酸化物の薄膜で透明な電極として使用される。通常、スパッタや蒸着などの方法により、ガラス基材や透明樹脂基材たとえば、ポリエチレンテレフタレート(PET)やポリエチレンテレナフタレート(PEN)、ポリカーボネート(PC)に製膜される。膜厚は、20nm~300nmが一般的で用途に応じて適宜調節される。またITOに類する透明電極として用いられる化合物としては、IZO、SnO2などが挙げられる。
感光性樹脂組成物の保護層を剥がしながら、ラミネーターで感光性樹脂積層体の感光性樹脂層をガラス基板表面に加熱圧着しラミネートする。この時の加熱温度は一般的に40~160℃である。また、該加熱圧着を二回以上行うことにより、得られるレジストパターンの基板に対する密着性が向上する。この時、圧着は二連のロールを備えた二段式ラミネーターを使用してもよいし、何回か繰り返してロールに通し圧着してもよい。
所望の配線パターンを有するマスクフィルムを支持体上に密着させ活性光源を用いて露光を施す。用いられる活性光線源としては、高圧水銀灯、超高圧水銀灯、紫外線蛍光灯、カーボンアーク灯、キセノンランプなどが挙げられる。また、より微細なレジストパターンを得るためには平行光光源を用いるのがより好ましい。ゴミや異物の影響を極力少なくしたい場合には、フォトマスクを支持体上から数十um以上数百um以上浮かせた状態で露光(プロキシミティー露光)する場合もある。
露光後、感光性樹脂層上の支持体を剥離し、続いてアルカリ水溶液の現像液を用いて未露光部を現像除去してレジスト画像を得る。アルカリ水溶液としては、Na2CO3又はK2CO3の水溶液を用いる。アルカリ水溶液は、感光性樹脂層の特性に合わせて適宜選択されるが、約0.2~2質量%の濃度、約20~40℃のNa2CO3水溶液が一般的である。該アルカリ水溶液中には、表面活性剤、消泡剤、現像を促進させるための少量の有機溶剤などを混入させてもよい。基材への影響を考慮してテトラアンモニウムヒドロキシド(TMAH)水溶液などアミン系のアルカリ水溶液を用いることもできる。現像速度に応じて濃度を適宜選択することができる。
上記の各工程を経てレジストパターンを得ることができるが、場合により、さらに約100~300℃の加熱工程を行うこともできる。この加熱工程を実施することにより、更なる耐薬品性向上が可能となる。加熱には熱風、赤外線、遠赤外線の方式の加熱炉を用いることができる。
現像により露出した基板のITO膜をエッチングする。通常30~60℃の塩化第二銅―塩酸水溶液又は塩化第二鉄―塩酸水溶液等の酸性エッチング液を用いて、導体パターンを形成する。上記エッチング液以外にも、ITO膜や下地の種類に応じてシュウ酸水溶液を用いることもできる。
その後、現像液よりも強いアルカリ性を有する水溶液を用いてレジストパターンを基板から剥離する。剥離用のアルカリ水溶液についても特に制限はないが、濃度約2~5質量%、温度約40~70℃のNaOH、KOHの水溶液が一般に用いられる。剥離液に、少量の水溶性溶媒を加えることもできる。
(実施例1~10、比較例1~3)
まず、実施例及び比較例の評価用サンプルの作製方法を説明し、次いで、得られたサンプルについての評価方法及びその評価結果を示す。
実施例及び比較例における評価用サンプルは次の様にして作製した。
<感光性樹脂積層体の作製>
以下の表1に示す組成(但し、各成分の数字は固形分としての配合量(質量部)を示す。)の感光性樹脂組成物及び溶媒をよく攪拌、混合して感光性樹脂組成物調合液とし、支持体としての16μm厚のポリエチレンテレフタラートフィルムの表面にバーコーターを用いて均一に塗布し、95℃の乾燥機中で2.5分間乾燥して感光性樹脂層を形成した。感光性樹脂組成層の厚みは25μmであった。
次いで、感光性樹脂層のポリエチレンテレフタラートフィルムを積層していない表面上に、保護層として21μm厚のポリエチレンフィルムを張り合わせて感光性樹脂積層体を得た。
90nmのITO膜を積層した0.7mm厚のガラス基材(ジオマテック(株)製)を用意した。
感光性樹脂組成積層体のポリエチレンフィルムを剥がしながら、ホットロールラミネーター(大成ラミネーター(株)製、VA-400III )により、ロール温度110℃でラミネートした。エアー圧は0.40MPaとし、ラミネート速度は1.5m/minとした。
クロムガラスフォトマスクを用いて、オーク製作所製高精度露光機EXM-1066-H-01(ghi線、23W、ギャップ露光方式 150um)により150mJ/cm2の露光量で露光した。なお、クロムガラスフォトマスクには、露光部と未露光部の幅が1:1の比率のラインパターンマスクを用いた。
ポリエチレンテレフタラートフィルムを剥離した後、30℃の1質量%Na2CO3水溶液を所定時間スプレーし、感光性樹脂層の未露光部分を溶解除去した。この際、未露光部分の感光性樹脂層が完全に溶解するのに要する最も少ない時間を最小現像時間をとし、その2倍の時間同条件で現像して硬化レジストパターンを作製した。
上述の硬化レジストパターン付着ガラス基板を50℃に加熱した塩化第二鉄―塩酸水溶液(ADEKA(株)製、アデカケルミカITO-400)中に5分間浸漬してエッチング加工を行い、エッチング後のガラス基板を水洗洗浄した。
次いで、50℃に加熱した3質量%のNaOH水溶液中にエッチング後のガラス基板を3分間浸漬して硬化レジストパターンを剥離した。
<密着性評価>
現像後に硬化レジストパターンのライン間幅を測定した。さらに、エッチング後の形成回路パターンのライン間幅を測定した。硬化レジストパターンのライン間幅とエッチング後の形成回路パターンのライン幅を比較し、サイドエッチ幅を算出した。サイドエッチ幅の値により、下記のようにランク分けした:
◎:サイドエッチ幅の値が8.5μm以下である;
○:サイドエッチ幅の値が8.5μmを超え12.0μm以下である;
×:サイドエッチ幅の値が12.0μmを超える。
感光性樹脂積層体からポリエチレンフィルムを剥がし、上記の露光量にて露光後15分経過した後、スペクトロメーター(日本電色工業(株)、NF333)を用いて、ポリエトレンテレフタラート側から露光部と未露光部のコントラストを測定した。また、温度23℃、湿度75%で3日間保存した同じ感光性樹脂積層体のコントラストを同手順で測定し、その差により下記のようにランク分けした:
◎:コントラストの差が0.8以下である;
○:コントラストの差が0.8を超え1.5以下である;
×:コントラストの差が1.5を超える。
実施例1~10、及び比較例1~3の評価結果を表1に示す。
Claims (12)
- (A)アルカリ可溶性樹脂40~90質量%、(B)エチレン性不飽和二重結合を有する化合物5~50質量%、(C)光重合開始剤1~20質量%、(D)エポキシシラン化合物0.001~2.5質量%、及び(E)チオール化合物0.005~1.0質量%を含む感光性樹脂組成物。
- 前記(E)一般式(I)で表されるチオール化合物が、該式中、R1が芳香族性を有する複素環化合物である、請求項2に記載の感光性樹脂組成物。
- 前記(A)アルカリ可溶性高分子対前記(B)エチレン性不飽和二重結合を有する化合物の質量比が1.5~1.8:1である、請求項1に記載の感光性樹脂組成物。
- 支持フィルム上に請求項1~7のいずれか1項に記載の感光性樹脂組成物からなる感光性樹脂層が積層された感光性樹脂積層体。
- 請求項8に記載の感光性樹脂積層体を透明電極上にラミネートするラミネート工程、該積層体に露光を行う露光工程、及び該露光された積層体に現像を行う現像工程を含むことを特徴とするレジストパターン形成方法。
- 請求項9に記載のパターン形成方法で得られたレジストパターンに従って前記透明電極をエッチングすることを特徴とする電極の製造方法。
- 請求項8に記載の感光性樹脂積層体を鉄系合金上にラミネートするラミネート工程、該積層体に露光を行う露光工程、及び該露光された積層体に現像を行う現像工程を含むことを特徴とするレジストパターン形成方法。
- 請求項11に記載のパターン形成方法で得られたレジストパターンに従って前記鉄系合金をエッチングすることを特徴とする鉄系合金構造体の製造方法。
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JP2016056323A (ja) * | 2014-09-12 | 2016-04-21 | 住友化学株式会社 | 硬化性樹脂組成物 |
CN113845611A (zh) * | 2020-06-28 | 2021-12-28 | 常州强力先端电子材料有限公司 | 支链化改性树脂及包括其的光固化组合物 |
CN113845611B (zh) * | 2020-06-28 | 2024-04-19 | 常州强力先端电子材料有限公司 | 支链化改性树脂及包括其的光固化组合物 |
KR20230123402A (ko) * | 2022-02-16 | 2023-08-23 | 창 춘 플라스틱스 컴퍼니, 리미티드 | 포토레지스트 필름 및 그의 적용 |
JP2023119545A (ja) * | 2022-02-16 | 2023-08-28 | 長春人造樹脂廠股▲分▼有限公司 | フォトレジストフィルム及びその適用 |
KR102609268B1 (ko) | 2022-02-16 | 2023-12-01 | 창 춘 플라스틱스 컴퍼니, 리미티드 | 포토레지스트 필름 및 그의 적용 |
JP7460692B2 (ja) | 2022-02-16 | 2024-04-02 | 長春人造樹脂廠股▲分▼有限公司 | フォトレジストフィルム及びその適用 |
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CN104111584A (zh) | 2014-10-22 |
CN102428406B (zh) | 2014-09-03 |
JPWO2010134549A1 (ja) | 2012-11-12 |
JP5486594B2 (ja) | 2014-05-07 |
TW201106099A (en) | 2011-02-16 |
KR20120022939A (ko) | 2012-03-12 |
CN102428406A (zh) | 2012-04-25 |
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