WO2010101066A1 - 結晶質膜の製造方法および結晶質膜製造装置 - Google Patents

結晶質膜の製造方法および結晶質膜製造装置 Download PDF

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WO2010101066A1
WO2010101066A1 PCT/JP2010/052935 JP2010052935W WO2010101066A1 WO 2010101066 A1 WO2010101066 A1 WO 2010101066A1 JP 2010052935 W JP2010052935 W JP 2010052935W WO 2010101066 A1 WO2010101066 A1 WO 2010101066A1
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film
laser beam
pulse
pulse laser
laser light
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PCT/JP2010/052935
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English (en)
French (fr)
Japanese (ja)
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陵太郎 富樫
亮介 佐藤
俊明 清野
俊夫 井波
秀晃 草間
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株式会社日本製鋼所
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Priority to CN201080002151.0A priority Critical patent/CN102099895B/zh
Priority to JP2011502729A priority patent/JP5594741B2/ja
Priority to KR1020107029391A priority patent/KR101323614B1/ko
Priority to TW99106288A priority patent/TWI467659B/zh
Publication of WO2010101066A1 publication Critical patent/WO2010101066A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

Definitions

  • the present invention relates to a crystalline film manufacturing method and a manufacturing apparatus for manufacturing a crystalline film by irradiating an amorphous film with pulsed laser light to finely crystallize the amorphous film.
  • the amorphous silicon film provided on the upper layer of the substrate is irradiated with pulsed laser light to be melted and recrystallized.
  • a solid phase growth method (SPC: SolidSoPhase Crystallization) in which the substrate having an amorphous silicon film as an upper layer is heated in a heating furnace and the silicon film is grown as a solid without melting. Two methods are commonly used.
  • the present inventors have confirmed that a fine polycrystalline film can be obtained by solid-phase growth by irradiating a pulsed laser beam while keeping the substrate temperature in a heated state, and propose this (patent) Reference 1).
  • polysilicon is a stable material and has a long life.
  • the characteristic variation of the TFT is large. This variation in TFT characteristics is more likely to occur due to variations in crystal grain size and the presence of crystalline silicon crystal grain interfaces (crystal grain boundaries) in the TFT channel formation region. Variations in TFT characteristics tend to depend mainly on the crystal grain size and the number of crystal grain boundaries existing between the channels.
  • the electron mobility generally increases.
  • the TFT channel length must be increased instead of those with high field electron mobility, and the size of each pixel of RGB (red, green, blue) depends on the TFT channel length. As a result, high resolution cannot be obtained. For this reason, the degree of demand for fine crystal films with small variations in crystal grain size is increasing.
  • the laser annealing method is a process in which amorphous silicon is once melted and recrystallized, and generally has a large crystal grain size and a large variation in crystal grain size.
  • the field electron mobility is high, the number of crystal grain sizes in the channel region of a plurality of TFTs varies, the random shape, and the difference in crystal orientation between adjacent crystals.
  • the characteristic variation of the TFT is greatly affected.
  • a difference in crystallinity is likely to appear in the laser overlapping portion, and this difference in crystallinity greatly affects the variation in TFT characteristics.
  • the crystal obtained by the solid phase growth method has the smallest particle size and little TFT variation, and is the most effective crystallization method for solving the above problems.
  • the crystallization time is long and it is difficult to adopt for mass production.
  • a batch type heat treatment apparatus that simultaneously treats a plurality of substrates is used. Since a large number of substrates are heated at the same time, it takes a long time to raise and lower the temperature, and the temperature in the substrate tends to be non-uniform.
  • the glass substrate when the glass substrate is heated for a long time at a temperature higher than the strain point temperature of the glass substrate, the glass substrate itself contracts and expands to damage the glass.
  • the crystallization temperature of SPC is higher than the glass transition point, the glass substrate is bent or contracted with a slight temperature distribution. As a result, even if crystallization is possible, a process such as an exposure process is hindered and it is difficult to manufacture a device. Higher processing temperatures require higher temperature uniformity. In general, the crystallization rate depends on the heating temperature, and a treatment time of 600 ° C. for 10 to 15 hours, 650 ° C. for 2 to 3 hours, and 700 ° C. for several tens of minutes is required. In order to perform processing without damaging the glass substrate, a long processing time is required, and this method is difficult to adopt for mass production.
  • the present invention has been made against the background of the above circumstances, and a crystalline film capable of efficiently producing a fine crystalline film with little variation in crystal grain size from an amorphous film without damaging the substrate. It aims at providing the manufacturing method of.
  • the first aspect of the present invention is that the amorphous film on the upper layer of the substrate has a wavelength of 340 to 358 nm and an energy density of 130 to 240 mJ / cm 2.
  • the amorphous film is irradiated with a pulse laser beam having a shot number of 1 to 10 times, and the amorphous film is heated to a temperature not exceeding the crystal melting point to be crystallized.
  • the crystalline film manufacturing apparatus of the present invention includes a pulse laser light source that outputs a pulse laser beam having a wavelength of 340 to 358 nm, an optical system that guides and irradiates the pulse laser beam to an amorphous film, and the laser beam is amorphous.
  • a scanning device that moves the laser light relative to the amorphous film so that the overlap irradiation is performed within a range of 1 to 10 shots.
  • a temperature at which the amorphous film does not exceed the crystalline melting point by irradiating the amorphous film with a pulsed laser beam in the ultraviolet wavelength region with an appropriate energy density and an appropriate number of shots and rapidly heating the amorphous film.
  • a uniform fine crystal having a small variation in particle size for example, a fine crystal having a size of 50 nm or less and having no protrusions can be obtained by a method different from the conventional melting / recrystallization method.
  • the crystal grain size becomes larger than 50 nm, and in the melt crystallization method and SPC (solid phase growth method) using a heating furnace, the variation in crystal grains becomes large and a fine crystal is obtained.
  • the film to be crystallized since the film is heated only to a temperature not exceeding the melting point of the crystal, the film to be crystallized does not change in phase any further, and for example, a pulse laser is used to change only amorphous silicon to crystalline silicon. Similar crystallinity can be obtained at the light overlapping position, and the uniformity is improved. Note that the amorphous film can be heated to a higher temperature as compared with a conventional solid phase growth method by irradiation with pulsed laser light according to the conditions of the present invention.
  • the underlying substrate is unlikely to be damaged.
  • heating of the substrate is not necessary.
  • the present invention does not exclude the heating of the substrate.
  • Wavelength range 340 to 358 nm Since the above wavelength range is a wavelength range with good absorption for an amorphous film, particularly an amorphous silicon film, the amorphous film can be directly heated with a pulsed laser beam in the wavelength range. Therefore, it is not necessary to provide a laser absorption layer indirectly on the amorphous film. In addition, since the laser beam is sufficiently absorbed by the amorphous film, the substrate can be prevented from being heated by the laser beam, and the substrate can be prevented from being bent and deformed, thereby preventing the substrate from being damaged.
  • the wavelength of the laser beam is absorbed by an amorphous film, particularly an amorphous silicon film, but is transmitted, the light on the irradiated portion of the amorphous film is caused by multiple reflection from the lower layer side. Is largely dependent on the deviation (variation) in the thickness of the amorphous film lower layer.
  • laser light can be completely absorbed by the surface layer of an amorphous film, particularly a silicon film, so that a polycrystalline film can be obtained without much consideration of variations in the film thickness of the lower layer.
  • the present invention can be applied to the case where an amorphous film is formed on a metal.
  • silicon of about 50 nm thickness absorbs light but there is also transmitted light. Therefore, the light from the silicon lower layer (buffer layer such as SiO 2 and SiN layer) If the thickness of the buffer layer under the silicon is not uniform due to the influence of multiple reflection, there is a problem that the light absorption rate of silicon also changes. There is a similar problem in the method of providing a capping layer such as SiO 2 on the upper layer of silicon. Further, when the wavelength region of the pulse laser light is in the infrared region, silicon having a thickness of about 50 nm hardly absorbs light. Therefore, it is general to provide a light absorption layer on the upper layer of silicon.
  • the wavelength range of the pulse laser beam is set to 340 to 358 nm in the ultraviolet range.
  • Energy density 130-240 mJ / cm 2
  • the amorphous film remains in the solid phase or exceeds the amorphous melting point and does not exceed the crystalline melting point. It can be heated and crystallized to produce microcrystals. If the energy density is low, the temperature of the amorphous film does not rise sufficiently and crystallization is not sufficiently performed, or crystallization becomes difficult. On the other hand, when the energy density is high, molten crystals are formed or ablation occurs. For this reason, the energy density of the pulse laser beam is limited to 130 to 240 mJ / cm 2 .
  • Number of shots 1 to 10 times
  • the number of shots is large, the amorphous film is heated to a temperature exceeding the crystalline melting point, and melting or ablation may occur. Further, the processing time becomes longer as the number of shots increases, resulting in poor efficiency.
  • Crystallization rate 60-95% It is desirable to set the crystallization rate during crystallization to 60 to 95% within the above conditions of wavelength, energy density, and number of shots.
  • the crystallization rate is less than 60%, it is difficult to obtain sufficient characteristics when used as a thin film transistor. If the energy given to the amorphous film is small, the crystallization rate cannot be increased to 60% or more. On the other hand, if the crystallization rate exceeds 95%, the crystal becomes coarse and it becomes difficult to obtain fine and uniform crystals. When the pulse laser beam is irradiated beyond the crystal melting point, the crystallization rate tends to exceed 95%.
  • the crystallization rate is specifically the ratio of the area of the crystal peak and the area of the amorphous peak obtained by Raman spectroscopy (area of the crystallized Si peak / (area of the amorphous Si peak + the area of the crystallized Si peak). Area).
  • the pulse width (half-value width) of the pulse laser beam is preferably 5 to 100 ns.
  • the pulse width is small, the peak power density increases, and it may be heated to a temperature exceeding the melting point to melt or ablate.
  • the pulse width is large, the peak power density decreases, and it may not be possible to heat to a temperature for solid-phase crystallization.
  • the pulse frequency of the pulse laser beam is desirably 6 to 10 kHz.
  • the pulse frequency of the pulse laser beam is increased to some extent (6 kHz or more), the time interval between shots is reduced, and the heat generated by the pulse laser beam irradiation is held in the amorphous film, which effectively acts on crystallization. .
  • the pulse frequency is too high, melting and ablation are likely to occur.
  • the short axis width of the pulse laser beam is preferably 1.0 mm or less.
  • the amorphous film By scanning the pulsed laser light relative to the amorphous film, the amorphous film can be crystallized along the surface direction.
  • the pulse laser beam side may be moved, the amorphous film side may be moved, or both may be moved.
  • the scanning is desirably performed at a speed of 50 to 1000 mm / second. When this scanning speed is low, the peak power density increases, and the amorphous film may be heated to a temperature exceeding the crystalline melting point to melt or ablate. In addition, when the scanning speed is high, the peak power density decreases, and it may not be possible to heat to a temperature for solid-phase crystallization.
  • the manufacturing apparatus of the present invention can output a pulse laser beam in a desired wavelength range using a solid-state laser light source that outputs a pulse laser beam in the ultraviolet region, and can produce microcrystals with a laser light source having good maintainability. It can be carried out.
  • the pulse laser beam can be irradiated to the amorphous film with the energy density adjusted appropriately by the energy adjusting unit.
  • the energy adjustment unit may adjust the output of the solid-state laser light source to obtain a predetermined energy density, or adjust the energy density by adjusting the attenuation factor of the pulsed laser light output from the solid-state laser light source. You may make it do.
  • the scanning device By scanning the pulse laser light relatively with respect to the amorphous film by a scanning device, a fine and uniform crystal can be obtained at an appropriate crystallization ratio in a large area of the amorphous film.
  • the frequency of the pulse, the short axis width of the pulse laser beam, and the scanning speed are set so that the number of shots in the same region with respect to the amorphous film becomes 1 to 10 by the scanning.
  • the scanning device may be a device that moves the optical system through which the pulse laser beam is guided to move the pulse laser beam, or a device that moves the base on which the amorphous film is disposed.
  • pulsed laser light having a wavelength of 340 to 358 nm and an energy density of 130 to 240 mJ / cm 2 is applied to the amorphous film on the upper layer of the substrate 1 to 10 times.
  • the amorphous film is heated to a temperature that does not exceed the crystal melting point and crystallized, so that the average grain shape is small so that a plurality of crystal grains may exist in the channel region of the TFT.
  • a crystalline film can be manufactured with exceptional uniformity, and the above-described problems can be solved.
  • the wiring width is reduced and the size of the channel formation region (channel length, channel width) of the TFT is also reduced, a stable crystalline film having a small average grain size can be uniformly produced over the entire substrate. Is required.
  • a crystallization technique that minimizes the difference in TFT characteristics between adjacent regions, and the present invention can be realized with certainty according to the present invention.
  • impurities adhering to the film surface can be removed.
  • the transition point of the substrate (glass or the like) is not exceeded, or even if the transition point is exceeded, only the amorphous film is heated to a high temperature with a laser so that the crystal can be processed. It can be made. At the same time, there is an effect that microcrystals of 50 nm or less can be formed in a short time. At the same time, there is an effect that the same crystallites of 50 nm or less can be formed in the overlapping portion (effective for crystallization of a large area). At the same time, it has the effect of minimizing substrate displacement (deflection, deformation, internal stress). At the same time, the substrate is heated to some extent, so that impurities existing in the amorphous film and contamination adhering to the surface are removed.
  • the substrate 8 used in the flat panel display TFT device is targeted, and an amorphous silicon thin film 8a is formed on the substrate 8 as an amorphous film.
  • the amorphous silicon thin film 8a is formed in the upper layer of the substrate 8 by a conventional method, and dehydrogenation treatment is omitted.
  • the type of the target substrate and the amorphous film formed thereon is not limited thereto.
  • FIG. 1 shows an ultraviolet solid laser annealing apparatus 1 used in a method for producing a crystalline film according to an embodiment of the present invention.
  • the ultraviolet solid annealing apparatus 1 is an apparatus for producing a crystalline film according to the present invention. It corresponds to.
  • an ultraviolet solid laser oscillator 2 having a wavelength of 340 to 358 nm and outputting a pulse laser beam having a pulse frequency of 6 to 10 kHz and a pulse width of 5 to 100 ns is installed on the vibration isolation table 6.
  • the ultraviolet solid laser oscillator 2 includes a control circuit 2a that generates a pulse signal.
  • An attenuator (attenuator) 3 is arranged on the output side of the ultraviolet solid laser oscillator 2, and an optical fiber 5 is connected to the output side of the attenuator 3 via a coupler 4.
  • An optical system 7 including condensing lenses 70a and 70b and beam homogenizers 71a and 71b disposed between the condensing lenses 70a and 70b is connected to the transmission destination of the optical fiber 5.
  • a substrate mounting table 9 on which the substrate 8 is mounted is installed in the emission direction of the optical system 7.
  • the optical system 7 is set so as to shape the pulse laser beam into a rectangular or line beam shape having a minor axis width of 1.0 mm or less.
  • the substrate mounting table 9 is movable along the surface direction (XY direction) of the substrate mounting table 9, and is provided with a scanning device 10 that moves the substrate mounting table 9 at high speed along the surface direction. ing.
  • the substrate 8 on which the amorphous silicon thin film 8a is formed as an upper layer is placed on the substrate platform 9.
  • the substrate 8 is not heated by a heater or the like.
  • a pulse signal is generated so that a pulse laser beam having a preset pulse frequency (6 to 10 kHz) and a pulse width of 5 to 100 ns is output.
  • a pulse laser beam having a wavelength of 358 nm is output.
  • the pulse laser beam output from the ultraviolet solid laser oscillator 2 reaches the attenuator 3 and is attenuated at a predetermined attenuation rate by passing through the attenuator 3.
  • the attenuation rate is set so that the pulse laser beam has an energy density defined by the present invention on the processed surface.
  • the attenuator 3 may vary the attenuation rate.
  • the pulsed laser light whose energy density is adjusted is transmitted through the optical fiber 5 and introduced into the optical system 7. In the optical system 7, as described above, it is shaped into a rectangular or line beam shape having a minor axis width of 1.0 mm or less by the condenser lenses 70a and 70b, the beam homogenizers 71a and 71b, etc. Irradiation with an energy density of ⁇ 240 mJ / cm 2 .
  • the substrate mounting table 9 is moved in the minor axis width direction of the line beam by the scanning device 10 along the surface of the amorphous silicon thin film 8a.
  • the pulse laser beam is relatively moved over a wide area of the surface of the amorphous silicon thin film 8a. Irradiated while being scanned.
  • the scanning speed of the pulse laser beam is set to 50 to 1000 mm / second by setting the moving speed by the scanning device, and the pulse laser beam overlaps the same region of the amorphous silicon thin film 8a with the number of shots of 1 to 10 times. Let it be irradiated.
  • the number of shots is determined based on the pulse frequency, the pulse width, the short axis width of the pulse laser beam, and the scanning speed of the pulse laser beam.
  • the heating temperature of the amorphous silicon thin film 8a does not exceed the crystal melting point (for example, about 1000 ° C. to about 1400 ° C.).
  • the heating temperature may be a temperature that does not exceed the amorphous melting point temperature, or a temperature that exceeds the amorphous melting point temperature and does not exceed the crystalline melting point.
  • the crystalline thin film obtained by the irradiation has a crystal grain size of 50 nm or less, no projections as seen in the conventional solid-phase crystal growth method, and uniform and fine high-quality crystallinity.
  • crystal grains can be measured by an atomic force microscope (AFM).
  • the crystallinity of the obtained crystal can be calculated based on the ratio between the area of the crystal peak and the area of the amorphous peak by Raman spectroscopy, and the crystallinity is preferably 60 to 95%.
  • the crystalline thin film can be suitably used for an organic EL display.
  • the use of the present invention is not limited to this, and the present invention can be used as other liquid crystal displays and electronic materials.
  • the pulse laser beam is relatively scanned by moving the substrate mounting table.
  • the pulse laser beam is relatively moved by moving the optical system to which the pulse laser beam is guided at high speed. It is good also as what scans.
  • the polycrystalline silicon thin film obtained by the method of the present invention has a small variation in crystal grain size, is uniformly polycrystallized over the entire surface, and obtains a high-quality polycrystalline silicon thin film. I was able to. At the same time, it was confirmed that the same uniform crystallites were formed in the overlapping portion. It has been found that since the crystal grains are as small as 50 nm or less and no protrusions are formed, and a crystalline silicon film can be obtained uniformly, a silicon film with little variation in TFT characteristics can be provided.
  • the pulsed laser beam was shaped by an optical system so as to be rectangular on the processed surface, and was irradiated to amorphous silicon on the substrate. Amorphous silicon is heated and converted to crystalline silicon.
  • the irradiated thin film was evaluated by SEM photographs shown in FIGS. 3 and 4 and Raman spectroscopic measurement as shown in FIG.
  • the crystallization rate was calculated by the calculation formula (1) based on the Raman spectroscopic measurement result, the area of crystallized Si peak / (area of amorphous Si peak + area of crystallized Si peak).
  • Example 2 In the case of a thin film irradiated with pulse laser light with an energy density of 130 mJ / cm 2 and a pulse frequency of 6 kHz, a microcrystal with a diameter of 10 to 20 nm is produced as shown in Photo 10 when the number of shots is six. did it. When the crystallization rate was evaluated by Raman spectroscopic measurement, it was 85%. Similar results were obtained when the pulse frequency was 8 kHz.
  • Example 3 In the thin film irradiated with the pulse laser beam with the energy density of the pulse laser beam of 140 mJ / cm 2 and the pulse frequency of 6 kHz, when the number of shots is six, as shown in Photo 11, 10 to 20 nm microcrystals can be produced. It was. When the crystallization rate was evaluated by Raman spectroscopic measurement, it was 88%. Similar results were obtained when the pulse frequency was 8 kHz.
  • Example 4 In the thin film irradiated with the pulse laser beam with the energy density of the pulse laser beam of 150 mJ / cm 2 and the pulse frequency of 6 kHz, when the number of shots is six, as shown in Photo 12, 10 to 20 nm microcrystals can be produced. It was. When the crystallization rate was evaluated by Raman spectroscopy, it was 90%. Similar results were obtained when the pulse frequency was 8 kHz.
  • Example 5 With a thin film irradiated with pulse laser light with an energy density of 160 mJ / cm 2 and a pulse frequency of 6 kHz, 20-30 nm microcrystals can be produced when the number of shots is 6 as shown in Photo 13. It was. When the crystallization rate was evaluated by Raman spectroscopy, it was 90%. Similar results were obtained when the pulse frequency was 8 kHz.
  • Example 6 With a thin film irradiated with pulsed laser light with an energy density of 180 mJ / cm 2 and a pulse frequency of 6 kHz, a crystallite of 20 to 30 nm can be produced when the number of shots is 6 as shown in Photo 14. It was. The crystallinity was evaluated by Raman spectroscopy to be 95%. Similar results were obtained when the pulse frequency was 8 kHz.
  • Example 7 With a thin film irradiated with pulse laser light with an energy density of 200 mJ / cm 2 and a pulse frequency of 6 kHz, a crystallite of 40 to 50 nm can be produced when the number of shots is 6 as shown in Photo 15. It was. The crystallinity was evaluated by Raman spectroscopy to be 95%. Similar results were obtained when the pulse frequency was 8 kHz.
  • Example 8 With a thin film irradiated with the pulsed laser beam with a pulsed laser beam energy density of 160 mJ / cm 2 and a pulse frequency of 8 kHz, 10-20 nm microcrystals can be produced when the number of shots is 2 as shown in Photo 19. It was. When the crystallization rate was evaluated by Raman spectroscopic measurement, it was 75%.
  • Example 9 With a thin film irradiated with pulsed laser light with an energy density of 180 mJ / cm 2 and a pulse frequency of 8 kHz, 10-20 nm microcrystals can be produced when the number of shots is 2 as shown in Photo 20. It was. When the crystallization rate was evaluated by Raman spectroscopy, it was 78%.
  • Example 3 the average grain size was 15 nm and the standard deviation ⁇ was 7 nm, and in Comparative Example 1, the average crystal grain size was 72 nm and the standard deviation ⁇ was 42 nm.
  • the polycrystalline silicon thin film obtained by the present invention has a small variation in crystal grains and a high rate of crystallization rate. Furthermore, it was confirmed that the entire surface was uniformly polycrystallized, and the same crystal was produced in the laser overlapping portion. Since the crystal grains are as small as 50 nm or less and no protrusions are formed, and a crystalline silicon film can be obtained uniformly, a silicon film with little variation in TFT characteristics can be provided.
  • Ultraviolet solid state laser annealing treatment equipment 2 Ultraviolet solid state laser oscillator 3 Attenuator (attenuator) Reference Signs List 4 coupler 5 optical fiber 6 vibration isolation table 7 optical system 70a condenser lens 70b condenser lens 71a beam homogenizer 71b beam homogenizer 8 substrate 8a amorphous silicon thin film 9 substrate mounting table 10 scanning device

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PCT/JP2010/052935 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置 WO2010101066A1 (ja)

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CN201080002151.0A CN102099895B (zh) 2009-03-05 2010-02-25 结晶膜的制造方法及结晶膜制造装置
JP2011502729A JP5594741B2 (ja) 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置
KR1020107029391A KR101323614B1 (ko) 2009-03-05 2010-02-25 결정질막의 제조 방법 및 결정질막 제조 장치
TW99106288A TWI467659B (zh) 2009-03-05 2010-03-04 結晶質膜的製造方法以及結晶質膜的製造裝置

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JP5594741B2 (ja) 2014-09-24
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