JP5594741B2 - 結晶質膜の製造方法および結晶質膜製造装置 - Google Patents
結晶質膜の製造方法および結晶質膜製造装置 Download PDFInfo
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- JP5594741B2 JP5594741B2 JP2011502729A JP2011502729A JP5594741B2 JP 5594741 B2 JP5594741 B2 JP 5594741B2 JP 2011502729 A JP2011502729 A JP 2011502729A JP 2011502729 A JP2011502729 A JP 2011502729A JP 5594741 B2 JP5594741 B2 JP 5594741B2
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- film
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- amorphous
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000013078 crystal Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 52
- 238000002425 crystallisation Methods 0.000 claims description 51
- 230000008025 crystallization Effects 0.000 claims description 46
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- 238000002844 melting Methods 0.000 claims description 25
- 230000008018 melting Effects 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 239000013081 microcrystal Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 82
- 239000010409 thin film Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 20
- 238000001069 Raman spectroscopy Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000007787 solid Substances 0.000 description 13
- 239000007790 solid phase Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000002679 ablation Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000003841 Raman measurement Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011502729A JP5594741B2 (ja) | 2009-03-05 | 2010-02-25 | 結晶質膜の製造方法および結晶質膜製造装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009052404 | 2009-03-05 | ||
JP2009052404 | 2009-03-05 | ||
PCT/JP2010/052935 WO2010101066A1 (ja) | 2009-03-05 | 2010-02-25 | 結晶質膜の製造方法および結晶質膜製造装置 |
JP2011502729A JP5594741B2 (ja) | 2009-03-05 | 2010-02-25 | 結晶質膜の製造方法および結晶質膜製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010101066A1 JPWO2010101066A1 (ja) | 2012-09-10 |
JP5594741B2 true JP5594741B2 (ja) | 2014-09-24 |
Family
ID=42709625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011502729A Active JP5594741B2 (ja) | 2009-03-05 | 2010-02-25 | 結晶質膜の製造方法および結晶質膜製造装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5594741B2 (ko) |
KR (1) | KR101323614B1 (ko) |
CN (1) | CN102099895B (ko) |
TW (1) | TWI467659B (ko) |
WO (1) | WO2010101066A1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012120775A1 (ja) | 2011-03-04 | 2012-09-13 | パナソニック株式会社 | 結晶性評価方法、結晶性評価装置、及びそのコンピュータソフト |
CN109920809A (zh) * | 2019-03-14 | 2019-06-21 | 上海交通大学 | 一种x射线平板探测器及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209069A (ja) * | 1997-01-17 | 1998-08-07 | Sumitomo Heavy Ind Ltd | レーザアニール方法及びレーザアニール装置 |
JP2003289046A (ja) * | 1995-12-14 | 2003-10-10 | Seiko Epson Corp | 半導体装置、半導体装置の製造方法、表示装置、電子機器 |
JP2004342785A (ja) * | 2003-05-15 | 2004-12-02 | Sony Corp | 半導体製造方法および半導体製造装置 |
JP2008147487A (ja) * | 2006-12-12 | 2008-06-26 | Japan Steel Works Ltd:The | 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3326654B2 (ja) * | 1994-05-02 | 2002-09-24 | ソニー株式会社 | 表示用半導体チップの製造方法 |
TW305063B (ko) | 1995-02-02 | 1997-05-11 | Handotai Energy Kenkyusho Kk | |
JP2000208416A (ja) * | 1999-01-14 | 2000-07-28 | Sony Corp | 半導体薄膜結晶化方法及びレ―ザ照射装置 |
TWI456663B (zh) * | 2007-07-20 | 2014-10-11 | Semiconductor Energy Lab | 顯示裝置之製造方法 |
-
2010
- 2010-02-25 KR KR1020107029391A patent/KR101323614B1/ko active IP Right Grant
- 2010-02-25 WO PCT/JP2010/052935 patent/WO2010101066A1/ja active Application Filing
- 2010-02-25 JP JP2011502729A patent/JP5594741B2/ja active Active
- 2010-02-25 CN CN201080002151.0A patent/CN102099895B/zh active Active
- 2010-03-04 TW TW99106288A patent/TWI467659B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003289046A (ja) * | 1995-12-14 | 2003-10-10 | Seiko Epson Corp | 半導体装置、半導体装置の製造方法、表示装置、電子機器 |
JPH10209069A (ja) * | 1997-01-17 | 1998-08-07 | Sumitomo Heavy Ind Ltd | レーザアニール方法及びレーザアニール装置 |
JP2004342785A (ja) * | 2003-05-15 | 2004-12-02 | Sony Corp | 半導体製造方法および半導体製造装置 |
JP2008147487A (ja) * | 2006-12-12 | 2008-06-26 | Japan Steel Works Ltd:The | 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102099895B (zh) | 2016-10-12 |
CN102099895A (zh) | 2011-06-15 |
WO2010101066A1 (ja) | 2010-09-10 |
TWI467659B (zh) | 2015-01-01 |
KR101323614B1 (ko) | 2013-11-01 |
TW201034082A (en) | 2010-09-16 |
KR20110122787A (ko) | 2011-11-11 |
JPWO2010101066A1 (ja) | 2012-09-10 |
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