JP5594741B2 - 結晶質膜の製造方法および結晶質膜製造装置 - Google Patents

結晶質膜の製造方法および結晶質膜製造装置 Download PDF

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Publication number
JP5594741B2
JP5594741B2 JP2011502729A JP2011502729A JP5594741B2 JP 5594741 B2 JP5594741 B2 JP 5594741B2 JP 2011502729 A JP2011502729 A JP 2011502729A JP 2011502729 A JP2011502729 A JP 2011502729A JP 5594741 B2 JP5594741 B2 JP 5594741B2
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Prior art keywords
film
laser beam
pulse laser
pulse
amorphous
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Japanese (ja)
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JPWO2010101066A1 (ja
Inventor
陵太郎 富樫
亮介 佐藤
俊明 清野
俊夫 井波
秀晃 草間
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Japan Steel Works Ltd
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Japan Steel Works Ltd
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2011502729A 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置 Active JP5594741B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011502729A JP5594741B2 (ja) 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009052404 2009-03-05
JP2009052404 2009-03-05
PCT/JP2010/052935 WO2010101066A1 (ja) 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置
JP2011502729A JP5594741B2 (ja) 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置

Publications (2)

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JPWO2010101066A1 JPWO2010101066A1 (ja) 2012-09-10
JP5594741B2 true JP5594741B2 (ja) 2014-09-24

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JP2011502729A Active JP5594741B2 (ja) 2009-03-05 2010-02-25 結晶質膜の製造方法および結晶質膜製造装置

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Country Link
JP (1) JP5594741B2 (ko)
KR (1) KR101323614B1 (ko)
CN (1) CN102099895B (ko)
TW (1) TWI467659B (ko)
WO (1) WO2010101066A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012120775A1 (ja) 2011-03-04 2014-07-07 パナソニック株式会社 結晶性評価方法、結晶性評価装置、及びそのコンピュータソフト
CN109920809A (zh) * 2019-03-14 2019-06-21 上海交通大学 一种x射线平板探测器及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209069A (ja) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置
JP2003289046A (ja) * 1995-12-14 2003-10-10 Seiko Epson Corp 半導体装置、半導体装置の製造方法、表示装置、電子機器
JP2004342785A (ja) * 2003-05-15 2004-12-02 Sony Corp 半導体製造方法および半導体製造装置
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
TW305063B (ko) 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
JP2000208416A (ja) * 1999-01-14 2000-07-28 Sony Corp 半導体薄膜結晶化方法及びレ―ザ照射装置
TWI456663B (zh) * 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003289046A (ja) * 1995-12-14 2003-10-10 Seiko Epson Corp 半導体装置、半導体装置の製造方法、表示装置、電子機器
JPH10209069A (ja) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置
JP2004342785A (ja) * 2003-05-15 2004-12-02 Sony Corp 半導体製造方法および半導体製造装置
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置

Also Published As

Publication number Publication date
KR20110122787A (ko) 2011-11-11
CN102099895A (zh) 2011-06-15
TWI467659B (zh) 2015-01-01
WO2010101066A1 (ja) 2010-09-10
CN102099895B (zh) 2016-10-12
JPWO2010101066A1 (ja) 2012-09-10
KR101323614B1 (ko) 2013-11-01
TW201034082A (en) 2010-09-16

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