WO2010087053A1 - ボンディングワイヤ - Google Patents

ボンディングワイヤ Download PDF

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Publication number
WO2010087053A1
WO2010087053A1 PCT/JP2009/065735 JP2009065735W WO2010087053A1 WO 2010087053 A1 WO2010087053 A1 WO 2010087053A1 JP 2009065735 W JP2009065735 W JP 2009065735W WO 2010087053 A1 WO2010087053 A1 WO 2010087053A1
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WIPO (PCT)
Prior art keywords
coating layer
wire
bonding
copper
bonding wire
Prior art date
Application number
PCT/JP2009/065735
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English (en)
French (fr)
Japanese (ja)
Inventor
長谷川　剛
Original Assignee
タツタ システム・エレクトロニクス株式会社
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Publication of WO2010087053A1 publication Critical patent/WO2010087053A1/ja

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Definitions

  • the present invention relates to a bonding wire for connecting an electrode on an integrated circuit element such as an IC, LSI, transistor or the like and a conductor wiring of a circuit wiring board such as a lead frame, a ceramic substrate, or a printed circuit board by a ball bonding method, and its manufacture. It is about the method.
  • connection method by this kind of ball bonding method is generally in the form shown in FIGS. 1 (a) to 1 (h).
  • the wire P is inserted into the capillary 10a and the ball is attached to the tip thereof.
  • the clamp 10b is opened, and the capillary 10a is lowered toward the electrode a on the integrated circuit element.
  • the ball (FAB) b is captured in the capillary 10a and bonded to the center of the capillary 10a.
  • the capillary 10a grips the ball b and applies heat, weight, and ultrasonic waves to the ball b, whereby the ball b and the electrode a Solid-phase bonding is performed to form a 1st bond and adhere to the electrode a (FIG. 1B).
  • the capillary 10a moves up to a certain height (FIG. (C)) and then moves to a position directly above the conductor wiring c (FIGs. (D) to (e)).
  • a special movement is performed on the capillary 10a so as to attach a “garbage” to the wire P (see the solid line from the chain line in FIG. 4D).
  • Capillary 10a that reaches directly above the conductor wiring c descends toward the conductor wiring c and presses the wire P against the conductor wiring (2nd target) c ((e) to (f) in the figure). At the same time, heat, weight, and ultrasonic waves are applied to the pressed part, thereby deforming the wire P, and stitching for joining the wire P onto the conductor wiring c and a tail for securing the tail in the next step. A bond is formed (FIG. 1 (f)).
  • the capillary 10a moves up with the wire P remaining, and after securing a tail of a certain length at the tip of the capillary 10a, the clamp 10b is closed (by grabbing the wire P).
  • the wire P is torn off from the bond portion (FIG. 1 (g)).
  • the wire P forming the tail bond does not rise together with the capillary 10a.
  • the capillary 10a stops when it rises to the required height, and a high voltage is applied to the tip of the wire P secured at the tip of the capillary 10a with the discharge rod g to discharge (discharge) the spark.
  • the wire P is melted, and the melted wire material becomes a spherical ball b by the surface tension and hardens (FIG. 1 (h)).
  • a gold wire is mainly used as the bonding wire P.
  • gold is expensive, in recent years, an inexpensive copper wire having a copper purity of 99.99% by mass or more has been used. Has been done.
  • a core material 1 made of a copper wire is coated with an oxidation resistant metal 2 is used.
  • gold (Au), platinum (Pt), palladium (Pd), silver (Ag), nickel (Ni) or the like is employed (Patent Documents 1 to 3).
  • the ball b In the bonding wire P made of a metal-coated copper wire, the ball b needs to be made smaller with the miniaturization of integrated circuit elements due to the recent miniaturization of electronic components.
  • the diameter L is preferably 50 ⁇ m or less (paragraph 0009, lines 12 to 14 of Patent Document 1).
  • the ball b when the ball b is in a downward bowl shape (reverse conical shape) in connection to the electrode a of the integrated circuit element, the electrode b is pressed by the sharp end of the ball b when the ball b is pressed against the electrode a.
  • the ball b is preferably a true sphere as much as possible.
  • the thickness t of the covering layer 2 is set to 0.001 or less of the core wire diameter (Patent Document 1, Claim 1), and the thickness t of the covering layer 2 is set to 0.001 to The thickness is set to 0.02 ⁇ m (Claim 1 of Patent Document 3), or the coating layer 2 is formed of an oxidation-resistant metal having a melting point higher than that of copper of the core material 1 (paragraph 0014 of Patent Document 2). Further, in the case of BGA (Ball Grid Array) based on an organic substrate, if the heating temperature (stage temperature) is increased, warping occurs and bonding properties are significantly deteriorated.
  • BGA All Grid Array
  • the bonding wire P coated with a copper wire with an oxidation-resistant metal has been well received by various devices from the past. There is a further demand for improved joint strength.
  • This invention makes it a subject to respond to the request.
  • the present invention adopts all the above-described devices, and the wire diameter L of the bonding wire P is 12 ⁇ m or more and 50.8 ⁇ m or less, and is made of copper having a purity of 99.99 mass% or more.
  • the coating layer 2 having a thickness t of 0.02 to 0.09 ⁇ m made of one or more of gold, platinum, palladium and silver was formed on the entire outer periphery of the core material 1.
  • the reason why the wire diameter L of the bonding wire P is set to 50.8 ⁇ m or less is that the diameter L is set to 50 ⁇ m or less in the above-mentioned Patent Document 1, but if it is 50.8 ⁇ m or less, it does not change to 50 ⁇ m or less. This is because the ball b can be made smaller.
  • the lower limit of the wire diameter L is set to 12 ⁇ m or more because if it is less than 12 ⁇ m, it becomes difficult for the operator to pass the wire P through the capillary 10a before bonding, resulting in poor workability.
  • the reason why the copper purity of the core material 1 is 99.99% by mass or more is to ensure high conductivity of copper.
  • the thickness t of the coating layer 2 shall be 0.02 micrometer or more from the experimental result of the Example and a comparative example.
  • the thickness t is 0.04 ⁇ m or more, more preferably 0.04 ⁇ m or more, based on the results of continuous bonding test.
  • the stage temperature is lowered, the load required for stitch bond bonding increases, and when the thickness t of the coating layer 2 is in the range of 0.02 ⁇ m or more to less than 0.04 ⁇ m, the degree of exposure of the core copper increases and the continuous bonding property increases. This is because may be damaged.
  • the coating layer 2 is thick, the hardness of the ball b increases and the possibility of damage to the Si chip (electrode a) increases. For this reason, the thickness t of the coating layer 2 shall be 0.09 micrometer or less from the experimental result of a postscript Example and a comparative example.
  • the covering layer 2 may be formed of one of these noble metals, but may be a multilayer of two or more metals.
  • this bonding wire P is configured with a bonding wire P having a diameter L of 12 ⁇ m or more and 50.8 ⁇ m or less for connecting the electrode a of the integrated circuit element and the conductor wiring c of the circuit wiring board by the ball bonding method.
  • the core material 1 is made of copper having a purity of 99.99% by mass or more, and the coating layer 2 having a thickness of 0.02 to 0.09 ⁇ m is formed on the entire outer periphery of the core material 1 with at least one of gold, platinum, palladium, and silver. The structure which formed is adopted.
  • the thickness t of the coating layer is set to 0.04 to 0.09 ⁇ m.
  • the bonding wire P having these configurations can be adopted.
  • gold, platinum, palladium, and silver 1 are formed on the entire outer surface of the core 1 made of copper having a purity of 99.99% by mass or more.
  • the coated wire is subjected to diffusion heat treatment to improve the adhesion between the core material and the coating layer, and then drawn to a wire diameter of 12 ⁇ m or more and 50.8 ⁇ m or less. It is possible to adopt a configuration in which the tempering heat treatment is performed so that the thickness becomes equal to or greater than%, and the thickness t of the coating layer 2 is 0.02 to 0.09 ⁇ m.
  • the coating layer 2 is formed of an oxidation resistant metal having a melting point higher than that of the copper of the core material 1, the sphericity of the ball b is increased.
  • the coating layer 2 has a thickness of 0.02 to 0.09 ⁇ m.
  • the margin of the condition for making the ball b a true sphere becomes wider with palladium. This is considered because the melting point of palladium is closer to the melting point of copper than the melting point of platinum. That is, when platinum is used for the coating layer 2, there is a time difference until the platinum melts after the copper is melted by discharge. If palladium is used for the coating layer 2, the difference in melting time is small, so that it is more likely to be a true sphere.
  • the melting point of the pure copper is 1083 ° C.
  • the melting point of gold is 1064 ° C.
  • the melting point of palladium is 1554 ° C.
  • the melting point of silver is 962 ° C.
  • the melting point of platinum is 1772 ° C.
  • the thickness t of the coating layer 2 is 0.04 ⁇ m or more
  • machine troubles are reduced even at a stage temperature of 150 ° C.
  • palladium is particularly adopted for the coating layer 2 and the thickness t of the coating layer 2 is 0.05 ⁇ m or more. It has also been confirmed that no machine trouble occurs even when the stage temperature is set at a lower temperature of 135 ° C. In the case of the palladium coating layer 2, it is considered that this is based on a synergistic effect with the fact that the difference in melting time between copper and palladium is small and the sphere is more likely to become a true sphere.
  • the possibility of damage to the Si chip decreases as can be understood from the experimental results of Examples and Comparative Examples described later. This is because the FAB hardness can be further reduced by setting the copper purity to 99.999 mass% or more.
  • the coating layer 2 is formed by known means such as electrolytic plating, electroless plating, and vapor deposition.
  • the wire P is formed by sequentially passing a copper rod having a large wire diameter through a tool called a die. Since it is finished to a predetermined wire diameter, the coating layer 2 is formed by the above means with an appropriate wire diameter in the middle of this process. At this time, the wire diameter of the core material 1 at the time of coating is determined by workability and cost.
  • the coated wire coated with a metal such as palladium on the entire outer surface is subjected to diffusion heat treatment at 200 to 500 ° C. (temperature of the coated wire) to improve the adhesion between the core material 1 and the coating layer 2, and then the wire diameter is 12 ⁇ m or more.
  • the thickness t of the coating layer 2 can be set to 0.02 to 0.09 ⁇ m by performing a tempering heat treatment so that the wire is drawn to 50.8 ⁇ m or less and further has a tensile elongation of 8% or more. The reason why the tensile elongation is 8% or more is to improve the stitch bondability and obtain more stable bonding properties.
  • the coating layer is made of palladium, the copper purity of the core material can be 99.999% by mass or more, and the thickness t of the coating layer can be 0.05 to 0.09 ⁇ m.
  • the present invention is configured as described above, a bonding wire obtained by coating a noble metal on pure copper having stable bonding strength can be obtained.
  • Examples 1 to 45 and Comparative Examples 1 to 13 shown in Table 1 were manufactured, and the degree of damage of the Si chip (electrode a) at the first bonding portion of the bonding wire P and the continuous bonding property test were performed. That is, first, a copper wire having a diameter of 0.2 to 0.8 mm made of pure copper having a copper purity of 99.99% by mass (in Table 1: 4N) and pure copper having a copper purity of 99.999% by mass (in Table 1: 5N) is used. Prepare and coat the copper wires with noble metals such as Au, Pd, Pt and Ag by electrolytic plating, rewind the coated wires, pass through an annealing furnace, and then rewind them with a take-up reel.
  • noble metals such as Au, Pd, Pt and Ag
  • Diffusion heat treatment was performed.
  • an electric furnace having a furnace core tube having a furnace length of 1 m was used, and nitrogen gas was allowed to flow through the furnace core tube.
  • the furnace temperature was 500 ° C. or more and 800 ° C. or less
  • the temperature of the coated wire was 200 to 500 ° C.
  • the traveling speed of the coated wire was 5 to 60 m / min.
  • the wire is drawn to a wire diameter of 15 to 50.8 ⁇ m, and the tensile elongation is 8% or more.
  • Bonding wires P (Examples 1 to 45 and Comparative Examples 1 to 13) having a thickness t of the coating layer 2 of 0.001 to 0.112 ⁇ m.
  • Table 1 an example showing two kinds of noble metals is a double coating of the two kinds of metals with the same thickness.
  • Table 1 shows the results of the following evaluation on each bonding wire P.
  • Thiickness of coating layer (surface coating layer) 2 Measured by Auger electron spectroscopy. Sputtering was performed from the surface of the coating layer with Ar, and the spectrum was measured for each unit time sputtering. The unit in the depth direction was the sputtering time, and the distance in the depth direction of the target material was calculated in terms of SiO 2 from the sputtering rate of the standard sample SiO 2 measured in advance.
  • Si chip damage at 1st junction (2): After bonding, in order to evaluate the Si chip damage directly under the 1st ball joint, the ball joint a and the electrode film were dissolved with aqua regia, and the cracks of the Si chip were observed with a light microscope and SEM. At this time, when observing 100 joints, one or no minute pits of 5 ⁇ m or less are seen as “A”, and when two or more minute pits of 5 ⁇ m or less are observed, it is practically harmful. Therefore, “B” was given as “D” when cracks of 5 ⁇ m or more were observed.
  • “Comprehensive evaluation” The evaluation of (1) is A for both 200 ° C.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
PCT/JP2009/065735 2009-01-27 2009-09-09 ボンディングワイヤ WO2010087053A1 (ja)

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CN102324392A (zh) * 2011-10-19 2012-01-18 广东佳博电子科技有限公司 一种防氧化的铜基键合丝的制备工艺
JP4860004B1 (ja) * 2011-02-28 2012-01-25 タツタ電線株式会社 ボンディングワイヤ及びその製造方法

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