TW201037777A - Bonding wire - Google Patents

Bonding wire Download PDF

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Publication number
TW201037777A
TW201037777A TW099102279A TW99102279A TW201037777A TW 201037777 A TW201037777 A TW 201037777A TW 099102279 A TW099102279 A TW 099102279A TW 99102279 A TW99102279 A TW 99102279A TW 201037777 A TW201037777 A TW 201037777A
Authority
TW
Taiwan
Prior art keywords
coating layer
wire
copper
bonding wire
bonding
Prior art date
Application number
TW099102279A
Other languages
English (en)
Chinese (zh)
Inventor
Tsuyoshi Hasegawa
Original Assignee
Tatsuta System Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatsuta System Electronics Co Ltd filed Critical Tatsuta System Electronics Co Ltd
Publication of TW201037777A publication Critical patent/TW201037777A/zh

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
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    • H01L2924/20—Parameters
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    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
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    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
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CN103219246A (zh) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 一种镀钯镀银的双镀层键合铜丝的制造方法
CN103597590A (zh) * 2011-02-28 2014-02-19 大自达电线株式会社 键合线及其制造方法

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KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
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CN103597590A (zh) * 2011-02-28 2014-02-19 大自达电线株式会社 键合线及其制造方法
CN103597590B (zh) * 2011-02-28 2016-05-25 大自达电线株式会社 键合线及其制造方法
CN103219247A (zh) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 一种镀银键合铜丝的制造方法
CN103219246A (zh) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 一种镀钯镀银的双镀层键合铜丝的制造方法

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