WO2010055855A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- WO2010055855A1 WO2010055855A1 PCT/JP2009/069202 JP2009069202W WO2010055855A1 WO 2010055855 A1 WO2010055855 A1 WO 2010055855A1 JP 2009069202 W JP2009069202 W JP 2009069202W WO 2010055855 A1 WO2010055855 A1 WO 2010055855A1
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- Prior art keywords
- substrate
- processed
- laser irradiation
- irradiation device
- film surface
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- 239000000758 substrate Substances 0.000 title claims abstract description 215
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 53
- 239000011521 glass Substances 0.000 description 16
- 230000002411 adverse Effects 0.000 description 8
- 239000012528 membrane Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Definitions
- the present invention relates to a substrate processing apparatus and a substrate processing method for performing processing by irradiating an edge portion of a film surface with laser light among substrates to be processed having a substrate and a film surface provided on the substrate.
- a substrate processing apparatus that irradiates a film surface with laser light among substrates to be processed having a substrate and a film surface provided on the substrate, the laser irradiation apparatus that irradiates laser light, and a film surface.
- a stage that supports only the peripheral edge of the substrate to be processed while positioned below, and a holding mechanism that supports the film surface of the substrate to be processed placed on this stage from below and holds the substrate to be processed in a flat state.
- a holding mechanism having a plurality of pin-shaped substrate support portions (see JP-A-2001-111078 and JP-A-2002-280578).
- the film surface when the film surface is supported by the pin-shaped substrate support portion as in the prior art, the film surface may be adversely affected by the pressing force by the substrate support portion.
- the substrate to be processed when processing the edge of the film surface, the substrate to be processed is supported only by the inner film surface, and the adverse effect on the film surface is further increased.
- the present invention has been made in consideration of such points, and reliably prevents the substrate to be processed from being bent without adversely affecting the film surface, thereby increasing the processing accuracy of the film surface. It is an object of the present invention to provide a substrate processing apparatus that can perform such a process, and a substrate processing method using such a substrate processing apparatus.
- a substrate processing apparatus comprises: Among substrate to be processed having a substrate and a film surface provided on the substrate, in a substrate processing apparatus for processing an edge of the film surface, An adsorption holding unit for adsorbing and holding the substrate to be processed from one side in a state where the film surface is located on the other side of the substrate; A laser irradiation device for irradiating laser light; A laser moving unit for moving the laser irradiation device, By moving the laser irradiation apparatus while irradiating the laser beam from the laser irradiation apparatus, the edge of the film surface is processed in the substrate to be processed held by the suction holding section.
- a substrate processing apparatus comprises: A pair of positioning portions that sandwich and position the substrate to be processed;
- the suction holding part sucks and holds the substrate to be processed sandwiched by the positioning part from one side;
- the positioning unit may release the substrate to be processed after the substrate to be processed is held by the suction holding unit.
- a substrate processing apparatus comprises: A rotation drive unit that rotates the substrate to be processed by rotating the suction holding unit; While irradiating the laser beam from the laser irradiation device, the laser irradiation device is moved along a predetermined direction to process one edge of the substrate to be processed, and then the rotation drive unit is used to process the object to be processed. After rotating the processing substrate, the other edge of the substrate to be processed is processed by moving the laser irradiation device along the predetermined direction while irradiating the laser beam from the laser irradiation device. May be.
- the lower end of the laser irradiation device may be located on one side of the end of the suction holding unit.
- the suction holding part has a contact part that comes into contact with the substrate to be processed, and a plurality of suction parts provided in the surface of the contact part,
- the abutting portion may include a metal plate and a resin sheet provided on the lower surface of the metal plate.
- the substrate processing method comprises: In a substrate processing method for processing an edge portion of a film surface among substrates to be processed having a substrate and a film surface provided on the substrate, A step of sucking and holding the substrate to be processed from one side in a state where the film surface is located on the other side of the substrate by the suction holding unit; Irradiating laser light from a laser irradiation device; A step of moving the laser irradiation device in a horizontal direction by a laser moving unit, By moving the laser irradiation apparatus while irradiating the laser beam from the laser irradiation apparatus, the edge of the film surface is processed in the substrate to be processed held by the suction holding section.
- a step of sucking and holding the substrate to be processed from one side may be performed, and then the substrate to be processed may be released by the positioning unit.
- the laser irradiation device While irradiating the laser beam from the laser irradiation device, the laser irradiation device is moved along a predetermined direction to process one edge of the substrate to be processed, and then the processing target is processed by a rotation drive unit. After the substrate is rotated, the other edge of the substrate to be processed is processed by moving the laser irradiation device along the predetermined direction while irradiating the laser beam from the laser irradiation device. Also good.
- the substrate in a state where the substrate is positioned above the film surface, the substrate is sucked and held from above by the suction holding unit, and the edge of the film surface is processed by the laser light emitted from the laser irradiation apparatus. Therefore, it is possible to reliably prevent the substrate to be processed from being bent without adversely affecting the film surface, and to increase the processing accuracy of the film surface.
- the side view which shows the suction holding
- the side sectional view showing the adsorption holding part and rotation drive part of the substrate processing device by an embodiment of the invention.
- the upper side view which looked at the substrate processing apparatus by embodiment of this invention from upper direction, and the side view which looked from the side.
- the side view which showed the timing which positions a to-be-processed substrate by a positioning part, and the timing which adsorb
- the side view which showed the timing which positions a to-be-processed substrate by a positioning part, and the timing which adsorb
- the upper side figure which showed the range of the edge part of the film surface of the to-be-processed substrate processed by the substrate processing apparatus of embodiment of this invention, and the side view which showed the motion of the laser irradiation apparatus.
- the upper top view which expanded the aspect which processes the edge part of the film surface of a to-be-processed substrate by the substrate processing apparatus of embodiment of this invention.
- the upper top view which showed the aspect which processes the edge part of the film
- the upper top view which showed the aspect which processes the edge part of the film
- the side view which looked at the substrate processing apparatus by another example of embodiment of this invention from the side.
- FIG. 1 to FIG. 11 are diagrams relating to embodiments of the present invention.
- the substrate processing apparatus is used to process edges 61 a and 61 b of the film surface 61 among the substrate 60 to be processed having a glass substrate (substrate) 62 and a film surface 61 provided on the glass substrate 62 ( (See FIG. 1).
- substrate used for a thin film solar cell can be mentioned, for example.
- the substrate processing apparatus moves the substrate 60 above (one side) while the glass substrate 62 is positioned above (one side) the film surface 61.
- An adsorption holding unit 10 (see FIG. 1) that adsorbs and holds the laser beam
- a laser irradiation device 20 see FIG. 1 that irradiates laser light L
- a laser moving unit 22 see FIG. 1 that moves the laser irradiation device 20 in the horizontal direction.
- 3A is an upper plan view of the substrate processing apparatus according to the present embodiment as viewed from above
- FIG. 3B is a side view of the substrate processing apparatus as viewed from the side.
- the substrate processing apparatus irradiates the laser beam L from the laser irradiation apparatus 20 and moves the laser irradiation apparatus 20 along a predetermined direction, whereby the substrate 60 to be processed held by the suction holding unit 10. It is comprised so that the edge parts 61a and 61b of the film surface 61 of this may be processed (refer Fig.6 (a) (b) and FIG. 7).
- FIG. 6A is an upper plan view showing the range of the edge portions 61a and 61b processed by the substrate processing apparatus of the present embodiment
- FIG. 6B shows the movement of the laser irradiation apparatus 20
- FIG. FIG. 7 is an enlarged top plan view showing a mode in which the edges 61a and 61b of the film surface 61 are processed by the substrate processing apparatus of the present embodiment. 7 indicates the laser spot of the laser beam L irradiated from the laser irradiation device 20 to the edges 61a and 61b of the film surface 61.
- the suction holding unit 10 is configured to suck and hold the substrate 60 to be processed sandwiched by the positioning units 5s and 5l (described later) (see FIGS. 4A and 4B).
- the positioning units 5s and 5l are configured to release the substrate 60 after the substrate 60 is held by the suction holding unit 10.
- a rotation driving unit 15 that rotates the substrate to be processed 60 by rotating the suction holding unit 10 is provided on the upper part of the suction holding unit 10.
- a description will be given using a mode in which the rotation driving unit 15 is provided on the upper part of the suction holding unit 10.
- the present invention is not limited to this.
- a mode in which the irradiation device 20 and the laser moving unit 22 are rotated may be used.
- the lower end of the laser irradiation device 20 is located above the upper end of the suction holding unit 10 (one side from the end), and the suction holding unit 10 is Even when rotated by the rotation drive unit 15, the suction holding unit 10 and the laser irradiation device 20 are configured not to collide with each other.
- the suction holding unit 10 includes a contact part 11 that comes into contact with the substrate to be processed 60 and a plurality of suction parts 12 provided within the surface of the contact part 11.
- the contact portion 11 includes a metal plate 14 and a resin sheet 13 provided on the lower surface of the metal plate 14.
- a pair of transport units 1 that transport the substrate to be processed 60 are provided on the upstream side of the laser irradiation device 20 and the laser moving unit 22. Further, in the vicinity of the transport unit 1, a pair of positioning units 5l that sandwich and position the substrate 60 to be processed in the transport direction, and two pairs that position the substrate 60 to be processed in a direction orthogonal to the transport direction. A positioning part 5s is provided.
- FIGS. 8A to 8E used in the following description, only one laser irradiation device 20 and laser moving unit 22 are shown for the sake of simplicity, but in this embodiment, As shown in FIG. 3A, a pair of laser irradiation devices 20 and a laser moving unit 22 are used.
- the substrate 60 to be processed is transported by the transport unit 1 (see FIGS. 3A and 3B). Then, when the substrate 60 to be processed is transferred to a predetermined position, the transfer unit 1 is stopped, whereby the transfer of the substrate 60 to be processed is stopped. At this time, the glass substrate 62 is positioned above the film surface 61, and the transport unit 1 is in contact with a portion of the film surface 61 that is removed by a laser beam L described later.
- the substrate to be processed 60 is sandwiched and positioned by the pair of positioning portions 5l in the transport direction, and the substrate to be processed 60 is sandwiched and positioned by the two pairs of positioning portions 5s in the direction orthogonal to the transport direction. (See FIGS. 3A and 3B and FIG. 4A).
- the substrate to be processed 60 held between the positioning portions 5s and 5l is sucked and held from above by the suction holding unit 10 (see FIGS. 4A and 4B). And after the to-be-processed substrate 60 is hold
- the target substrate 60 is positioned by the positioning portions 5s and 5l (see FIG. 5A), and then the target substrate 60 is released (FIG. 5B).
- Reference when the substrate 60 to be processed is sucked and held from above (see FIG. 5C), the substrate to be processed is held when the substrate 60 is sucked and held by the suction holding unit 10. 60 may deviate from the suction holding unit 10.
- the substrate 60 to be processed is released from the positioning by the positioning portions 5s and 5l after the substrate to be processed 60 is held by the suction holding unit 10 (FIG. 4A).
- the substrate 60 to be processed when the substrate 60 to be processed is sucked and held by the suction holding unit 10, it is possible to prevent the substrate 60 to be displaced from the suction holding unit 10. 10, the substrate 60 to be processed can be positioned at an accurate position.
- the substrate 60 to be processed is held by the suction holding unit 10 as described above, the substrate 60 to be processed is transported to the laser processing position by the suction holding unit 10 (see FIG. 3B).
- the laser irradiation unit 20 is moved in the horizontal direction by the laser moving unit 22 (see FIGS. 6A and 6B and FIGS. 8A and 8B). At this time, the laser beam L is emitted from the laser irradiation device 20. As described above, by irradiating the laser beam L from the laser irradiation device 20 and moving the laser irradiation device 20 along the X direction (predetermined direction), one edge of the film surface 61 of the substrate 60 to be processed. The part 61a is processed.
- the laser irradiation apparatus 20 moves at this time in the positive direction of the Y direction (in the direction orthogonal to the X direction and inward of the substrate to be processed 60) after moving along the X direction. After that, it moves in the direction along the X direction and in the opposite direction (see FIGS. 7 and 8A and 8B). In addition, by repeating such a movement as appropriate, one edge portion 61a of the substrate 60 to be processed can be processed within a desired range.
- the substrate to be processed 60 is rotated by the rotation driving unit 15 (see FIG. 8C), and then the laser irradiation apparatus is again used. While the laser beam L is irradiated from 20, the laser irradiation apparatus 20 moves along the X direction, and the other edge portion 61b of the substrate 60 to be processed is processed (see FIGS. 8D and 8E). For this reason, the moving distance of the laser irradiation apparatus 20 can be shortened as much as possible, and processing efficiency can be improved.
- the laser irradiation apparatus 20 when a substrate whose substrate 60 is not rotated by the rotation drive unit 15 is used, the laser irradiation apparatus 20 must be moved as indicated by arrows A 1 to A 8 in FIG. Therefore, the moving distance of the laser irradiation device 20 becomes long, and the processing efficiency is deteriorated.
- the moving distance of the laser irradiation apparatus 20 can be shortened as much as possible, and the processing efficiency can be improved. (See FIGS. 8A to 8E).
- the suction holding unit 10 can hold a wide range of the glass substrate 62 other than the portion through which the laser beam L is transmitted, it is ensured that the substrate 60 to be processed is bent. Can be prevented.
- the glass substrate 62 of the substrate to be processed 60 is adsorbed and held from above with the glass substrate 62 positioned above the film surface 61, and the glass substrate 62 Since the portion other than the portion through which the laser beam L is transmitted can be held by the suction holding unit 10 (see FIGS. 8B and 8E), the substrate 60 to be processed is not adversely affected on the film surface 61. It is possible to reliably prevent bending.
- the lower end of the laser irradiation device 20 is located above the upper end of the suction holding unit 10 (see FIG. 1 and FIG. 3B), and the suction holding unit 10 is a rotation drive unit. 15 is configured so that the suction holding unit 10 and the laser irradiation device 20 do not collide even when rotated by 15, so that the horizontal size of the suction holding unit 10 can be increased as much as possible. It can prevent more reliably that the to-be-processed substrate 60 bends.
- the contact part 11 has the metal plate 14 and the resin sheet 13 provided in the lower surface of the said metal plate 14 (refer Fig.2 (a)), by the metal plate 14 with high rigidity, It is possible to prevent the suction holding unit 10 itself from being bent, and it is possible to prevent the substrate 60 from being scratched by the resin sheet 13 and the substrate 60 from being displaced during rotation.
- the resin sheet 13 causes the substrate 60 to be processed. Although it is possible to prevent scratches and displacement of the substrate 60 during rotation, there is a possibility that the suction holding unit 10 itself bends.
- the contact portion 11 includes the metal plate 14 and also includes the resin sheet 13 provided on the lower surface of the metal plate 14. Therefore, the suction holding unit 10 itself can be prevented from being bent by the highly rigid metal plate 14, and the substrate 60 is scratched by the resin sheet 13, or the substrate 60 to be processed is rotated during rotation. It is possible to prevent the shift.
- the adsorption holding part 10 At least a portion corresponding to the edge of the film surface 61 may be made of a member that transmits the laser light L, and the suction holding unit 10 may hold the entire surface of the glass substrate 62. In this case, it is possible to more reliably prevent the workpiece substrate 60 from being bent.
- the glass substrate 62 is positioned on the upper side and the glass substrate 62 is sucked and held by the suction holding unit 10 from the upper side.
- the present invention is not limited to this. a) As shown in (b), the glass substrate 62 may be positioned below the film surface 61, and the glass substrate 62 may be sucked and held by the suction holding unit 10 from below.
- the laser irradiation device 20 is disposed between the pair of transfer units 1 and the laser irradiation device 20 is a pair. It becomes possible to process the edge part of the film surface 61 by being movable between the transport parts 1 (see FIGS. 10A and 10B and FIG. 11). In this case, the substrate 60 to be processed is lifted upward from the transport unit 1, and the substrate 60 to be lifted upward is appropriately rotated by the rotation driving unit 15.
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Abstract
Description
基板と、該基板に設けられた膜面とを有する被処理基板のうち、該膜面の縁部を処理する基板処理装置において、
前記膜面が前記基板の他方側に位置する状態で、前記被処理基板を一方側から吸着して保持する吸着保持部と、
レーザ光を照射するレーザ照射装置と、
前記レーザ照射装置を移動させるレーザ移動部と、を備え、
前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を移動させることによって、前記吸着保持部によって保持された前記被処理基板のうち前記膜面の縁部を処理する。
前記被処理基板を挟持して位置決めする一対の位置決め部を、さらに備え、
前記吸着保持部が、前記位置決め部によって挟持された前記被処理基板を一方側から吸着して保持し、
前記位置決め部が、前記吸着保持部によって前記被処理基板が保持された後で、該被処理基板を解放してもよい。
前記吸着保持部を回転させることによって前記被処理基板を回転させる回転駆動部を、さらに備え、
前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を所定の方向に沿って移動させることによって、前記被処理基板の一の縁部を処理し、その後、前記回転駆動部によって前記被処理基板を回転させた後で、前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を前記所定の方向に沿って移動させることによって、該被処理基板の他の縁部を処理してもよい。
前記レーザ照射装置の下端は、前記吸着保持部の端部よりも一方側に位置してもよい。
前記吸着保持部は、前記被処理基板に当接する当接部と、該当接部の面内に設けられた複数の吸着部と、を有し、
前記当接部は、金属プレートと、該金属プレートの下面に設けられた樹脂シートと、を有してもよい。
基板と、該基板に設けられた膜面とを有する被処理基板のうち、該膜面の縁部を処理する基板処理方法において、
吸着保持部によって、前記膜面が前記基板の他方側に位置する状態で、前記被処理基板を一方側から吸着して保持する工程と、
レーザ照射装置からレーザ光を照射する工程と、
レーザ移動部によって、前記レーザ照射装置を水平方向に移動させる工程と、を備え、
前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を移動させることによって、前記吸着保持部によって保持された前記被処理基板のうち前記膜面の縁部を処理する。
位置決め部によって挟持された後で、前記被処理基板を一方側から吸着して保持する工程が行われ、その後、該位置決め部によって、該被処理基板が解放されてもよい。
前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を所定の方向に沿って移動させることによって、前記被処理基板の一の縁部を処理し、その後、回転駆動部によって前記被処理基板を回転させた後で、前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を前記所定の方向に沿って移動させることによって、該被処理基板の他の縁部を処理してもよい。
以下、本発明に係る基板処理装置および基板処理方法の実施の形態について、図面を参照して説明する。ここで、図1乃至図11は本発明の実施の形態に関する図である。
Claims (8)
- 基板と、該基板に設けられた膜面とを有する被処理基板のうち、該膜面の縁部を処理する基板処理装置において、
前記膜面が前記基板の他方側に位置する状態で、前記被処理基板を一方側から吸着して保持する吸着保持部と、
レーザ光を照射するレーザ照射装置と、
前記レーザ照射装置を移動させるレーザ移動部と、を備え、
前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を移動させることによって、前記吸着保持部によって保持された前記被処理基板のうち前記膜面の縁部を処理することを特徴とする基板処理装置。 - 前記被処理基板を挟持して位置決めする一対の位置決め部を、さらに備え、
前記吸着保持部は、前記位置決め部によって挟持された前記被処理基板を一方側から吸着して保持し、
前記位置決め部は、前記吸着保持部によって前記被処理基板が保持された後で、該被処理基板を解放することを特徴とする請求項1に記載の基板処理装置。 - 前記吸着保持部を回転させることによって前記被処理基板を回転させる回転駆動部を、さらに備え、
前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を所定の方向に沿って移動させることによって、前記被処理基板の一の縁部を処理し、その後、前記回転駆動部によって前記被処理基板を回転させた後で、前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を前記所定の方向に沿って移動させることによって、該被処理基板の他の縁部を処理することを特徴とする請求項1に記載の基板処理装置。 - 前記レーザ照射装置の下端は、前記吸着保持部の端部よりも一方側に位置していることを特徴とする請求項3に記載の基板処理装置。
- 前記吸着保持部は、前記被処理基板に当接する当接部と、該当接部の面内に設けられた複数の吸着部と、を有し、
前記当接部は、金属プレートと、該金属プレートの下面に設けられた樹脂シートと、を有することを特徴とする請求項1に記載の基板処理装置。 - 基板と、該基板に設けられた膜面とを有する被処理基板のうち、該膜面の縁部を処理する基板処理方法において、
吸着保持部によって、前記膜面が前記基板の他方側に位置する状態で、前記被処理基板を一方側から吸着して保持する工程と、
レーザ照射装置からレーザ光を照射する工程と、
レーザ移動部によって、前記レーザ照射装置を水平方向に移動させる工程と、を備え、 前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を移動させることによって、前記吸着保持部によって保持された前記被処理基板のうち前記膜面の縁部を処理することを特徴とする基板処理方法。 - 位置決め部によって挟持された後で、前記被処理基板を一方側から吸着して保持する工程が行われ、その後、該位置決め部によって、該被処理基板が解放されることを特徴とする請求項6に記載の基板処理方法。
- 前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を所定の方向に沿って移動させることによって、前記被処理基板の一の縁部を処理し、その後、回転駆動部によって前記被処理基板を回転させた後で、前記レーザ照射装置からレーザ光を照射させつつ、該レーザ照射装置を前記所定の方向に沿って移動させることによって、該被処理基板の他の縁部を処理することを特徴とする請求項6に記載の基板処理方法。
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JPH10189515A (ja) * | 1996-12-24 | 1998-07-21 | Seiko Epson Corp | 基板周縁の不要物除去方法およびその装置 |
JP2001345252A (ja) * | 2000-05-30 | 2001-12-14 | Hyper Photon Systens Inc | レーザ切断機 |
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JP2006073909A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Electron Ltd | 基板処理装置 |
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JPH1064863A (ja) * | 1996-08-21 | 1998-03-06 | Nikon Corp | 基板洗浄装置 |
JP4108941B2 (ja) * | 2000-10-31 | 2008-06-25 | 株式会社荏原製作所 | 基板の把持装置、処理装置、及び把持方法 |
JP4554901B2 (ja) * | 2003-08-12 | 2010-09-29 | 株式会社ディスコ | ウエーハの加工方法 |
JP4546227B2 (ja) | 2004-11-30 | 2010-09-15 | Necエンジニアリング株式会社 | 膜厚抵抗測定装置 |
JP2006344718A (ja) * | 2005-06-08 | 2006-12-21 | Sony Corp | 異物除去方法 |
JP4734101B2 (ja) * | 2005-11-30 | 2011-07-27 | 株式会社ディスコ | レーザー加工装置 |
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JPH10189515A (ja) * | 1996-12-24 | 1998-07-21 | Seiko Epson Corp | 基板周縁の不要物除去方法およびその装置 |
JP2001345252A (ja) * | 2000-05-30 | 2001-12-14 | Hyper Photon Systens Inc | レーザ切断機 |
JP2003197570A (ja) * | 2001-12-21 | 2003-07-11 | Dainippon Screen Mfg Co Ltd | 基板周縁処理装置および基板周縁処理方法 |
JP2006287169A (ja) * | 2004-07-09 | 2006-10-19 | Sekisui Chem Co Ltd | 基材処理装置及び方法 |
JP2006073909A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Electron Ltd | 基板処理装置 |
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