TW201029785A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
TW201029785A
TW201029785A TW098138676A TW98138676A TW201029785A TW 201029785 A TW201029785 A TW 201029785A TW 098138676 A TW098138676 A TW 098138676A TW 98138676 A TW98138676 A TW 98138676A TW 201029785 A TW201029785 A TW 201029785A
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substrate
processed
laser irradiation
laser
irradiation device
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TW098138676A
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Chinese (zh)
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TWI469840B (en
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Hirohisa Kanbe
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Shibaura Mechatronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment

Abstract

A substrate processing apparatus processes end sections (61a, 61b) of a film surface (61) of a substrate to be processed (60) having a substrate (62) and the film surface (61) provided on the substrate (62). The substrate processing apparatus is provided with: a sucking/holding section (10) which sucks and holds the substrate to be processed (60) from above in a state where the substrate (62) is positioned above the film surface (61); a laser irradiation apparatus (20) which radiates a laser beam (L); and a laser moving section (22) which moves the laser irradiation apparatus (20) in the horizontal direction. The end sections (61a, 61b) of the film surface (61) of the substrate to be processed (60), which is held by means of the sucking/holding section (10), are processed by moving the laser irradiation apparatus (20), while radiating the laser beam (L) from the laser irradiation apparatus (20).

Description

201029785 六、發明說明： 【發明所屬之技術領域】 本發明係關於基板處理裝置及基板處理方法，其係對具 有基板與設於該基板之膜面之被處理基板中該膜面之緣部 照射雷射光而進行處理。 本申請案係對2008年11月13曰申請之曰本特願2〇〇8_ 291064·波主張優先權，此處該特願2〇〇8_291〇64號之所有 内容作為參考併入本文中。 【先前技術】 迄今為止，已知一種基板處理裝置，其係對具有基板與 設於基板之膜面之被處理基板中的膜面照射雷射光者具 備：照射雷射光之雷射照射裝置；在將膜面定位於下方之 狀態下只支持被處理基板之周緣部之台座；及從下方支持 置於該台座之被處理基板之膜面，使被處理基板保持於平 坦狀態之保持機構；該保持機構具有複數之銷形狀之基板 支持部（參照日本特開2001-111078號公報及曰本特開2〇〇2_ 280578號公報）。 但，如先前技術般之利用銷形狀之基板支持部支持膜面 時，由於基板支持部之押壓力而有對膜面產生不良影響之 可能性。另，將大型化之被處理基板以均一面保持有其困 難，被處理基板會撓曲，膜面之處理精度變差。特別在加 工膜面之緣部時，變得只以内部膜面支持被加工基板，給 膜面帶來之不良影響變得更大。 【發明内容】 144648.doc 201029785 本發明係考慮到如上之點而完成者，其目的在於提供一 種基板處理裝置及使用此種基板處理裝置之基板處理方 法，其可在不對膜面帶來不良影響下，確實地防止被處理 基板之撓曲，進而提高膜面之處理精度。 本發明之基板處理裝置，係處理包含基板與設於該基板 之膜面之被處理基板中該膜面之緣部者，其具備： 在前述膜面位於前述基板之另一側之狀態下，從一側吸 附保持前述被處理基板之吸附保持部；[Technical Field] The present invention relates to a substrate processing apparatus and a substrate processing method for irradiating an edge portion of the film surface with a substrate and a substrate to be processed provided on a film surface of the substrate Laser light is processed. The present application is hereby incorporated by reference in its entirety for all of the entire disclosures of the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of [Prior Art] Heretofore, there has been known a substrate processing apparatus which is provided with a laser irradiation apparatus that irradiates laser light to a surface of a substrate having a substrate and a substrate to be processed on a film surface of the substrate; a pedestal that supports only the peripheral portion of the substrate to be processed while positioning the film surface; and a holding mechanism that supports the film surface of the substrate to be processed placed on the pedestal from below to hold the substrate to be processed in a flat state; The mechanism has a plurality of pin-shaped substrate supporting portions (refer to Japanese Laid-Open Patent Publication No. 2001-111078 and Japanese Patent Application Laid-Open No. Hei. However, when the film surface is supported by the substrate supporting portion of the pin shape as in the prior art, there is a possibility that the film surface is adversely affected by the pressing force of the substrate supporting portion. Further, it is difficult to hold the enlarged substrate to be processed on one side, and the substrate to be processed is deflected, and the processing accuracy of the film surface is deteriorated. In particular, when the edge portion of the film surface is processed, the substrate to be processed is supported only by the inner film surface, and the adverse effect on the film surface is further increased. SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object thereof is to provide a substrate processing apparatus and a substrate processing method using the substrate processing apparatus, which can adversely affect the film surface. Next, the deflection of the substrate to be processed is surely prevented, thereby improving the processing precision of the film surface. In the substrate processing apparatus of the present invention, the edge of the film surface including the substrate and the substrate to be processed on the film surface of the substrate is processed, and the film surface is located on the other side of the substrate. Adsorbing and holding the adsorption holding portion of the substrate to be processed from one side;

照射雷射光之雷射照射裝置；及 使前述雷射照射裝置移動之雷射移動部；且 藉由一面從前述雷射照射裝置照射雷射光，-面使該雷 射…、射裝置移動’ *處理以前述吸附保持部所保持之前述 被處理基板中前述膜面之緣部。 本發明之基板處理裝置， 被處理基板之一對定位部； 亦可進而具備夾持並定位前述 刖述吸附保持部從一側吸附保持 述被處理基板； 以前述定位部夾持之前a laser irradiation device that illuminates the laser beam; and a laser moving portion that moves the laser irradiation device; and the laser beam is irradiated from the laser irradiation device, and the laser device is moved to the surface. The edge portion of the film surface in the substrate to be processed held by the adsorption holding portion is processed. In the substrate processing apparatus of the present invention, the one of the substrates to be processed is positioned to be positioned; and the holding and holding unit may be occluded and positioned to suck and hold the substrate to be processed from one side;

前述^位部係在以前述吸附保持部保持前述被處理基板 後’釋放該被處理基板。 t發明之基板處理裝置，亦可進而㈣藉由使前述吸附 保持部旋轉錢前料處縣板㈣之婦驅動部；且 藉由-面從前述雷射照射裳置照射雷射光，一面使該雷 =裝=著特定方向移動，而處理前述被處理基板之 一緣和接者’藉由前述旋轉驅動部使前述被處理基板旋 H4648.doc -4- 201029785 轉後，一面從前述雷射照射裝置照射雷射光，一面使該雷 射照射裝置沿著前述特定方向移動’而處理該被處理基板 之另一緣部。 如此基板處理裝置中，前述雷射照射裝置之下端，亦可 位於比前述吸附保持部之端部更靠近一側。 本發明之基板處理裝置中，前述吸附保持部亦可包含： 與前述被處理基板抵接之抵接部，及設於該抵接部面内之 複數之吸附部； 前述抵接部亦可包含金屬板、及設於該金屬板之下面之 樹脂片。 本發明之基板處理方法，係處理包含基板與設於該基板 之膜面之被處理基板中該膜面之緣部者，其中具備： 藉由吸附保持冑，在冑述膜面位於前述基板之另一側之 狀態下，從一侧吸附保持前述被處理基板之步驟； 從雷射照射裝置照射雷射光之步驟，·及 藉由雷射移動冑，使前述雷射肖射震置於水平方向移動 之步驟；且 藉由-面從前述雷射照射裝置照射雷射，一面使前述雷 射照射裝置移動，而處理以前述吸附保持部所保持之前述 被處理基板中前述膜面之緣部。 本發明之基板處理方法中，亦可在藉由定位部夾持後， 進行從-侧吸附保持前㈣處理基板之㈣，接著 該定位部釋放該被處理基板。 本發明之基板處理方法中，亦可藉由—面從前述雷射照 144648.doc 201029785 射裝置照射雷射光，一面使該雷射照射裝置沿著特定方向 移動，而處理前述被處理基板之一緣部，接著，以旋轉驅 動部使前述被處理基板旋轉後，藉由一面從前述雷射照射 裝置照射雷射光，一面使該雷射照射裝置沿著前述特定方 向移動，而處理該被處理基板之另一緣部。 根據本發明，在基板位於膜面上方之狀態下，藉由吸附 保持部從上方吸附保持該基板，而藉由從雷射照射裝置照 射之雷射光處理膜面之緣部，因此不會給膜面帶來不良影 響，可確實地防止被處理基板之撓曲，進而可使膜面之處 理精度提高。 【實施方式】 以下’關於本發明之基板處理裝置及基板處理方法之實 施形態，參照附圖說明。此處，圖丨至圖丨丨係關於本發明 之實施形態之圖。 基板處理裝置係用以處理具有玻璃基板（基板）62與設於 玻璃基板62之膜面61之被處理基板60中膜面61之緣部 61a、61b(參照圖1)。再者，作為如此被處理基板6〇 ’例如 可舉出用於薄膜太陽電池之基板。 如圖1及圖3(a)(b)所示，基板處理裝置具備：在玻璃基 板62位於膜面61上方（一側）之狀態下，從上方（一側）吸附 保持被處理基板60之吸附保持部1 〇(參照圖1);照射雷射光 L之雷射照射裝置2〇(參照圖1);使雷射照射裝置20於水平 方向移動之雷射移動部22(參照圖3(a)(b))。再者，圖3(a) 係本實施形態之基板處理裝置從上方所見之上方平面圖， 144648.doc 201029785 圖3(b)係該基板處理裝置從側面所見之側面圖。 此處，基板處理裝置’係藉由一面從雷射照射裝置20照 射雷射光L ’ 一面使該雷射照射裝置20沿著特定方向移 •動，以處理藉由吸附保持部10保持之被處理基板60之膜面 , 61之緣部61a、61b之方式而構成（參照圖6(a)(b)及圖7)。 再者，圖6(a)係顯示藉由本實施形態之基板處理裝置所 要處理之緣部61a、61b之範圍之上方平面圖，圖6(b)係顯 馨 示雷射照射裝置20之移動之侧面圖。另，圖7係將藉由本 實施形態之基板處理裝置處理膜面61之緣部61a、61b之樣 態放大之上方平面圖。再者，圖7之符號S係表示從雷射照 射裝置20照射於媒面61之緣部61a、61b之雷射光L之雷射 點。 另，吸附保持部10係以從上方吸附保持藉由定位部5s、 51(後述）所夾持之被處理基板6〇之方式而構成（參照圖 4(a)(b))，另一方面，定位部5s、51係以在藉由吸附保持部 φ 10保持被處理基板60後，釋放該被處理基板60之方式而構 成。 另，如圖1所示’於吸附保持部10之上部，設有藉由使 : 該吸附保持部10旋轉而使被處理基板60旋轉之旋轉驅動部 15。再者，本實施形態中，雖使用於吸附保持部丨〇之上部 設有旋轉驅動部15之樣態進行說明，但不限於此，例如亦 可使用使雷射照射裝置20與雷射移動部22相對於吸附保持 部10旋轉之樣態。 另，如圖1及圖3(b)所示，雷射照射裝置2〇之下端位於 144648.doc 201029785 比吸附保持部ίο之上端更上方（比端部更靠近—侧），而構 成為即使在使吸附保持部10藉由旋轉驅動部15旋轉時，吸 附保持部10與雷射照射裝置20亦不會發生碰撞。 另，如圖2(a)所示，吸附保持部1〇具有與被處理基板6〇 抵接之抵接部U，及設於該抵接部丨丨之面内之複數吸附部 12。再者，本實施形態中，抵接部丨丨具有金屬板14，及設 於該金屬板I4下面之樹脂片13。 另，如圖3(a)(b)所示，於雷射照射裝置2〇及雷射移動部 22之上游側，設有搬送被處理基板6〇之一對搬送部工。 另，於搬送部1附近，設有在搬送方向夾持被處理基板6〇 進行定位之一對定位部51，及在與搬送方向正交之方向夾 持被處理基板60進行定位之二對定位部5 s。 接著，就形成如此構成之本實施形態之作用進行陳述。 並且，後述之說明所使用之圖8(a)_(e)中，為簡化附圖，只 顯示一個雷射照射冑置20與雷射移動部22，但本實施形/態 係使用如圖3⑷之-對雷射照射裝置2G與雷射移動部 盲先，藉由搬送部1 ’搬送作為處理對象之被處理基板 6〇(參照圖3(a)(b))。然後，被處理基板6〇搬送至特定位置 時，彳τ止搬送部1，藉此停止被處理基板6〇之搬送。此 時，玻璃基板62成為位於膜面61上方之 膜㈣中以後述之雷射紅除去之部分抵接。 接著，藉由m部5卜在搬送方向夾持被處理基板 6〇進打定位，且藉由二對定位部&，在與搬送方向正交之 方向夾持被處理基板60進行定位（參照圖3(&)〇?)及圖 144648.doc 201029785 4(a))。 接著’藉由吸附保持部1 〇，從上方吸附保持利用定位部 5s、51夾持之被處理基板60(參照圖。然後，藉由 吸附保持部10保持被處理基板60後，被處理基板6〇從藉由 定位部5s、51之定位中釋放。因此’藉由吸附保持部1〇吸 附保持被處理基板60時，可防止被處理基板60對吸附保持 部10之偏移。 更具體言之’首先’藉由定位部5s、51進行被處理基板 60之定位（參照圖5(a))，接著，若使用釋放被處理基板6〇 後（參照圖5(b)) ’從上方吸附保持被處理基板6〇(參照圖 5(c))之樣態，則藉由吸附保持部1 〇吸附保持被處理基板6〇 時’有被處理基板60對吸附保持部1〇偏移之可能性。 關於此點，根據本實施形態，由於藉由吸附保持部丨〇保 持被處理基板60後，被處理基板60才從藉由定位部58、51 之定位中釋放（參照圖4(a)(b))，因此藉由吸附保持部1〇吸 附保持被處理基板60時，可防止被處理基板60對吸附保持 部10偏移’進而可將被處理基板6〇相對吸附保持部1〇定位 於正確之位置。 藉由如前述之以吸附保持部10保持被處理基板6〇時，藉 由吸附保持部10將被處理基板6〇搬送至雷射加工位置（參 照圖3(b))。 接著’藉由雷射移動部22將雷射照射裝置20於水平方向 移動（參照圖6(a)(b)及圖8(a)(b))。然後，此時，從雷射照 射裝置20照射雷射光如此藉由一面從雷射照射裝置2〇 144648.doc 201029785 照射雷射光L，一面使該雷射照射裝置2〇沿著χ方向（特定 方向）移動’處理被處理基板60之膜面61之一個緣部61a。 此時之雷射照射裝置20之移動，本實施形態中，沿著χ 方向移動後’於Y方向之正方向（與χ方向正交方向之被處 理基板60之内方）移動，接著’變為沿著χ方向之方向與方 才相反之方向移動（參照圖7及圖8(a)(b))。再者，藉由適當 重複如此移動，可在所期望之範圍處理被處理基板6〇之一 個緣部61 a。 如前所述’處理被處理基板6〇之—個緣部6ia時，藉由 ❹ 旋轉驅動部15旋轉被處理基板6〇(參照圖8(c))，之後，再 一面從雷射照射裝置2〇照射雷射光L，一面使雷射照射裝 置20沿著χ方向移動，處理被處理基板6〇之另一緣部 61b(參照圖8(d)(e))。因此，可儘量縮短雷射照射裝置2〇之 移動距離，可使處理效率提高。 更具體言之，使用不藉由旋轉驅動部15旋轉被處理基板 6〇之裝置時’如圖9之箭頭A丨〜As所示，必須使雷射照射裝 置20移動，雷射照射裝置2〇之移動距離變長，處理效率變 @ 差。 與此相對，根據本實施形態，由於藉由旋轉驅動部15使 被處理基板60旋轉，因此可儘量縮短雷射照射裝置之移 ： 動距離，可使處理效率提高（參照圖8(a)_(e))。 另，根據本實施形態，由於藉由吸附保持部丨〇，在玻璃 基板62位於膜面61上方之狀態下，從上方吸附保持被處理 基板60之玻璃基板62，因此位於下方之膜面61 诉叫〇ι不用藉由 144648.doc -10- 201029785 (如先前技術）銷形狀之基板支持部押壓。再者，根據本實 施形態’由於可將玻璃基板62中透過雷射光[之部分以外 之廣大範圍藉由吸附保持部10而保持，因此可確實防止被 處理基板60之撓曲。 如上所述，根據本實施形態，不會給膜面61帶來不良影 響，可確實防止被處理基板6〇之撓曲，進而可使膜面61之 處理精度提高。 即，根據先前技術，由於為防止（大型化）被處理基板6〇 之撓曲，有必要藉由多數銷形狀之基板支持部支持膜面 61’因此給膜面61帶來不良影響之可能性變高。另一方 面，為防止對膜面61產生不良影響，只支持膜面61中以雷 射光L除去之部分（狹小範圍）時，被處理基板⑼變成大幅 撓曲。 與此相對，根據本實施形態，在玻璃基板62位於膜面61 上方之狀態下，從上方吸附保持被處理基板6〇之玻璃基板 62，且可藉由吸附保持部丨〇保持破璃基板62中使雷射光[ 穿透的部分以外之部分（參照圖8(b)(e)) ’因此不會對膜面 61帶來不良影響，可確實防止被處理基板6〇之撓曲。 再者，本實施形態中，因構成為雷射照射裝置2〇之下端 位於比吸附保持部10之上端更上方（參照圖【及圖3(b))，即 使在使吸附保持部1 〇藉由旋轉驅動部i 5旋轉時，吸附保持 邛1 〇與雷射照射裝置2〇亦不會發生碰撞，因此可使吸附保 持部10之水平方向之大小盡可能的擴大，可更確實防止被 處理基板6〇之撓曲。 144648.doc 201029785 另谢由於抵接_具有金屬板14，及設於該金屬板町 面之树脂片參照圖2⑷），因此藉由剛性較高之金屬板 14可防止吸附保持部1()本身撓曲，㈣由樹脂片η可防止 被處理基板60到傷、或被處理基板6〇於旋轉時偏移。 更具體言之’如圖2⑻所示，絲接仙不具有金屬板 14而只包含樹脂構件13，時，雖藉由樹脂片13可防止被處理 基板60刮傷、或被處理基板6〇於旋轉時偏移，但吸附保持 部10本身亦有撓曲之可能性。 與此相對，本實施形態中，如圖2(a)所示，抵接部11具 有金屬板14，且亦具有設於該金屬板丨4下面之樹脂片13， 因此藉由剛性較高之金屬板14可防止吸附保持部1〇本身撓 曲，且藉由樹脂片13可防止被處理基板6〇刮傷、或被處理 基板60於旋轉時偏移。 如上所述’根據本實施形態’不會給膜面61帶來不良影 響，可確實防止被處理基板6〇之撓曲，進而可使膜面61之 處理精度提高’進而可得到如前述之各種效果。 但，本實施形態中，雖使用將玻璃基板62中透射雷射光 L之部分以外藉由吸附保持部10保持之樣態進行了說明， 但不限於此，亦可吸附保持部1 〇之至少與膜面6 1之緣部對 應之部分包含透射雷射光L之構件，以吸附保持部1 〇保持 玻璃基板62之整個面。此時，可更確實防止被加工基板60 之挽曲。 另，前述雖使用玻璃基板62位於上方側，藉由吸附保持 部10從上方側吸附保持該玻璃基板62之樣態進行了說明， 144648.doc 12· 201029785 不限於此，亦可如圖1〇(a)(b)所示，玻璃基板Μ位於膜 面61之下方側’藉由吸附保持部1()從下方側吸附保持該玻 璃基板62。 根據如此構成，由於因配線等關係搬送被加工基板⑽較 困難，故例如將雷射照射裝置2〇配置於一對搬送部1之 間，忒雷射照射裝置2〇可在一對搬送部【間移動，因此亦 可處理膜面61之緣部（參照圖l〇(a)(b)及圖11)。然後，此 時，從搬送部1向上方抬起被加工基板6〇，向上方抬起之 被加工基板60藉由旋轉驅動部15適當旋轉。 【圖式簡單說明】 圖1係顯示本發明之實施形態之基板處理裝置之吸附保 持部、旋轉驅動部及雷射照射裝置之侧面圖； 圖2(a)、（b)係顯示本發明之實施形態之基板處理裝置之 吸附保持部及旋轉驅動部之側面剖面圖； 圖3(a)、（b)係本發明之實施形態之基板處理裝置從上方 所見之上方平面圖，及從側面所見之侧面圖； 圖4(a)、（b)係顯示本發明之實施形態之基板處理裝置 中’藉由定位部定位被處理基板之時點，及藉由吸附保持 部進行吸附保持之時點之侧面圖； 圖5(a)〜(c)係顯示本發明之實施形態之其他例之基板處 理裝置中’藉由定位部定位被處理基板之時點，及藉由吸 附保持部進行吸附保持之時點之側面圖； 圖6(a)、（b)係顯示藉由本發明之實施形態之基板處理裝 置處理之被處理基板之膜面之緣部範圍之上方平面圖，及 144648.doc -13- 201029785 雷射照射裝置之移動之側面圖； 圖7係藉由本發明之實施形態之基板處理裝置處理被處 理基板之膜面之緣部之樣態放大之上方平面圖； 圖8(a)〜(e)係顯示藉由本發明之實施形態之基板處理裝 置’依次處理被處理基板之膜面之緣部之樣態之上方平面 圖； 圖9係顯示藉由本發明之實施形態之其他例之基板處理 裝置’依次處理被處理基板之膜面之緣部之樣態之上方平 面圖； 圖10(a)、（b)係本發明之實施形態之再其他例之基板處 理裝置從側面所見之側面圖；及 圖11係本發明之實施形態之再其他例之基板處理裝置從 上方所見之上方平面圖。 【主要元件符號說明】 1 搬送部 10 吸附保持部 11 抵接部 12 吸附部 13 樹脂片 13' 樹脂構件 14 金屬板 15 旋轉驅動部 20 雷射照射裝置 22 雷射移動部 144648.doc 201029785 51 ' 5s 定位部 60 被處理基板 61 膜面 61 a、61 b 緣部 62 基板 L 雷射光 ❹ 144648.doc -15-The said portion is to release the substrate to be processed after the substrate to be processed is held by the adsorption holding portion. Further, in the substrate processing apparatus of the invention, the adsorption holding unit may be rotated by the female driving unit of the preamplifier plate (4); and the laser beam is irradiated from the laser irradiation by the surface. Ray = Mounting = moving in a specific direction, and processing one of the edges of the substrate to be processed and the carrier's rotation of the substrate to be processed by the aforementioned rotary driving portion, H4648.doc -4- 201029785 The device irradiates the laser light while moving the laser irradiation device along the specific direction to process the other edge portion of the substrate to be processed. In the substrate processing apparatus as described above, the lower end of the laser irradiation device may be located closer to the side than the end portion of the adsorption holding portion. In the substrate processing apparatus of the present invention, the adsorption holding unit may include: an abutting portion that abuts against the substrate to be processed; and a plurality of adsorption portions that are provided in the surface of the abutting portion; and the abutting portion may include a metal plate and a resin sheet disposed under the metal plate. In the substrate processing method of the present invention, the edge portion of the film surface including the substrate and the substrate to be processed on the film surface of the substrate is processed, and the method includes: holding the crucible by adsorption, and positioning the film surface on the substrate a step of adsorbing and holding the substrate to be processed from one side in a state of the other side; a step of irradiating the laser light from the laser irradiation device, and moving the laser beam by the laser to cause the laser to be shaken in the horizontal direction And a step of moving; and irradiating the laser light from the laser irradiation device to move the laser irradiation device to process an edge portion of the film surface in the substrate to be processed held by the adsorption holding portion. In the substrate processing method of the present invention, after the nip is held by the positioning portion, the substrate may be processed (four) before being sucked and held by the side, and then the positioning portion releases the substrate to be processed. In the substrate processing method of the present invention, one of the substrates to be processed may be processed by irradiating the laser light from the laser 144648.doc 201029785 device and irradiating the laser irradiation device in a specific direction. In the edge portion, after the substrate to be processed is rotated by the rotation driving unit, the laser beam is irradiated from the laser irradiation device, and the laser irradiation device is moved in the specific direction to process the substrate to be processed. The other edge. According to the invention, in the state in which the substrate is positioned above the film surface, the substrate is adsorbed and held from above by the adsorption holding portion, and the edge portion of the film surface is treated by the laser light irradiated from the laser irradiation device, so that the film is not applied. The surface adversely affects the deflection of the substrate to be processed, and the processing accuracy of the film surface can be improved. [Embodiment] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. Here, the drawings to the drawings are diagrams relating to embodiments of the present invention. The substrate processing apparatus is for processing the edge portions 61a and 61b (see Fig. 1) having the glass substrate (substrate) 62 and the film surface 61 of the substrate 60 to be processed on the film surface 61 of the glass substrate 62. Further, as the substrate 6〇' thus treated, for example, a substrate for a thin film solar cell can be cited. As shown in FIG. 1 and FIG. 3 (a) and (b), the substrate processing apparatus includes a substrate 60 that is held and held from above (one side) in a state in which the glass substrate 62 is located above (on one side of) the film surface 61. The adsorption holding unit 1 〇 (see FIG. 1 ); the laser irradiation device 2 照射 irradiating the laser light L (see FIG. 1 ); and the laser moving unit 22 that moves the laser irradiation device 20 in the horizontal direction (refer to FIG. 3 (a) ) (b)). Fig. 3(a) is a plan view of the substrate processing apparatus of the present embodiment as seen from above, 144648.doc 201029785. Fig. 3(b) is a side view of the substrate processing apparatus as seen from the side. Here, the substrate processing apparatus ' moves the laser irradiation apparatus 20 in a specific direction while irradiating the laser light L' from the laser irradiation apparatus 20 to process the processing held by the adsorption holding section 10. The film surface of the substrate 60 is formed to have the edge portions 61a and 61b of 61 (see FIGS. 6(a), (b) and 7). Further, Fig. 6(a) is a plan view showing the upper side of the range of the edge portions 61a and 61b to be processed by the substrate processing apparatus of the present embodiment, and Fig. 6(b) shows the side of the movement of the laser irradiation device 20. Figure. Further, Fig. 7 is an upper plan view showing an enlarged state of the edge portions 61a and 61b of the film surface 61 by the substrate processing apparatus of the present embodiment. Further, the symbol S of Fig. 7 indicates the laser spot of the laser beam L irradiated from the edge portions 61a and 61b of the medium surface 61 from the laser irradiation device 20. Further, the adsorption holding unit 10 is configured to suck and hold the substrate to be processed 6夹持 held by the positioning portions 5s and 51 (described later) from above (see FIG. 4(a) and (b)). The positioning portions 5s and 51 are configured to hold the substrate 60 to be processed by the adsorption holding portion φ 10 and then release the substrate 60 to be processed. Further, as shown in Fig. 1, the upper portion of the adsorption holding portion 10 is provided with a rotation driving portion 15 for rotating the substrate 60 to be processed by rotating the adsorption holding portion 10. In the present embodiment, the rotation driving unit 15 is provided on the upper portion of the adsorption holding unit ,. However, the present invention is not limited thereto. For example, the laser irradiation unit 20 and the laser moving unit may be used. 22 is rotated relative to the adsorption holding portion 10. Further, as shown in FIG. 1 and FIG. 3(b), the lower end of the laser irradiation device 2 is located at 144648.doc 201029785, which is higher than the upper end of the adsorption holding portion ίο (closer than the end portion), and is configured to be even When the adsorption holding unit 10 is rotated by the rotation driving unit 15, the adsorption holding unit 10 and the laser irradiation unit 20 do not collide. Further, as shown in Fig. 2(a), the adsorption holding portion 1A has an abutting portion U that abuts against the substrate to be processed 6A, and a plurality of adsorption portions 12 provided in the surface of the abutting portion. Further, in the present embodiment, the abutting portion 丨丨 has a metal plate 14 and a resin sheet 13 provided on the lower surface of the metal plate I4. Further, as shown in Fig. 3 (a) and (b), on the upstream side of the laser irradiation device 2 and the laser moving unit 22, a pair of transporting substrates 6 are transported. Further, in the vicinity of the transport unit 1, a pair of positioning portions 51 for positioning the substrate to be processed 6 in the transport direction and positioning the substrate to be processed in a direction orthogonal to the transport direction are provided. Department 5 s. Next, the effect of the present embodiment thus constituted will be described. Further, in the drawings 8(a) to (e) used in the following description, only one laser irradiation unit 20 and the laser moving unit 22 are shown for simplification of the drawing, but the present embodiment is shown in the figure. In the case of the laser irradiation device 2G and the laser moving unit, the substrate to be processed 6〇 to be processed is transported by the transport unit 1' (see FIGS. 3(a) and 3(b)). Then, when the substrate to be processed 6 is transported to a specific position, the transport unit 1 is stopped by the 彳τ, whereby the transport of the substrate to be processed 6 is stopped. At this time, the glass substrate 62 is a part of the film (4) located above the film surface 61, and the portion where the laser red is removed, which will be described later, abuts. Then, the substrate to be processed 6 is held in the transport direction by the m portion 5, and the substrate to be processed 60 is positioned in the direction orthogonal to the transport direction by the two pairs of positioning portions & Figure 3 (&) 〇?) and Figure 144648.doc 201029785 4(a)). Then, the substrate to be processed 60 held by the positioning portions 5s and 51 is sucked and held from above by the adsorption holding unit 1 (see the figure. Then, the substrate to be processed 60 is held by the adsorption holding unit 10, and the substrate 6 to be processed is held. The crucible is released from the positioning of the positioning portions 5s and 51. Therefore, when the substrate to be processed 60 is adsorbed and held by the adsorption holding portion 1A, the offset of the substrate to be processed 60 against the adsorption holding portion 10 can be prevented. 'Firstly', the positioning of the substrate 60 to be processed is performed by the positioning portions 5s and 51 (see FIG. 5(a)), and then, after the substrate to be processed 6 is released (see FIG. 5(b)), the film is held and held from above. In the state of the substrate 6〇 to be processed (see FIG. 5(c)), the possibility that the substrate to be processed 60 is offset from the adsorption holding portion 1 when the substrate to be processed 6 is adsorbed and held by the adsorption holding portion 1 In this regard, according to the present embodiment, since the substrate 60 to be processed is held by the adsorption holding portion ,, the substrate 60 to be processed is released from the positioning by the positioning portions 58, 51 (refer to Fig. 4(a) ( b)), therefore, the substrate 60 to be processed is adsorbed and held by the adsorption holding portion 1 The substrate to be processed 60 can be prevented from being displaced by the adsorption holding portion 10, and the substrate to be processed 6 can be positioned at the correct position with respect to the adsorption holding portion 1A. The substrate to be processed 6 is held by the adsorption holding portion 10 as described above. At the time of 〇, the substrate to be processed 6 is transported to the laser processing position by the adsorption holding unit 10 (see FIG. 3( b )). Next, the laser irradiation unit 20 is moved in the horizontal direction by the laser moving unit 22 ( 6(a)(b) and Fig. 8(a)(b)). Then, at this time, the laser beam is irradiated from the laser irradiation device 20 so as to be irradiated from the laser irradiation device 2 144648.doc 201029785 The laser beam L moves the laser irradiation device 2 〇 in the χ direction (specific direction) to process one edge portion 61a of the film surface 61 of the substrate 60 to be processed. At this time, the movement of the laser irradiation device 20 is In the embodiment, after moving in the χ direction, the positive direction in the Y direction (inside the substrate to be processed 60 orthogonal to the χ direction) is moved, and then the direction is changed in the direction opposite to the χ direction. Move (refer to Figure 7 and Figure 8 (a) (b)). Again, by appropriate weight By moving in this way, one edge portion 61a of the substrate to be processed 6a can be processed in a desired range. When the edge portion 6ia of the substrate to be processed 6 is processed as described above, the rotation of the rotary driving portion 15 is After the substrate 6 is processed (see FIG. 8(c)), the laser beam L is irradiated from the laser irradiation device 2, and the laser irradiation device 20 is moved in the x direction, and the substrate to be processed 6 is processed. One edge portion 61b (see Fig. 8 (d) (e)). Therefore, the moving distance of the laser irradiation device 2 can be shortened as much as possible, and the processing efficiency can be improved. More specifically, the rotation driving portion 15 is not used. When the apparatus for rotating the substrate 6 is rotated, as shown by the arrows A 丨 to As in Fig. 9, the laser irradiation device 20 must be moved, the moving distance of the laser irradiation device 2 becomes long, and the processing efficiency becomes poor. On the other hand, according to the present embodiment, since the substrate to be processed 60 is rotated by the rotation driving unit 15, the movement distance of the laser irradiation device can be shortened as much as possible, and the processing efficiency can be improved (see Fig. 8(a)_ (e)). According to the present embodiment, the glass substrate 62 of the substrate to be processed 60 is adsorbed and held from above by the adsorption holding portion 状态 in a state where the glass substrate 62 is positioned above the film surface 61, so that the film surface 61 located below It is not necessary to press the pin-shaped substrate support portion by 144648.doc -10- 201029785 (as in the prior art). Further, according to the present embodiment, since a large range other than the portion through which the laser light is transmitted through the glass substrate 62 can be held by the adsorption holding portion 10, the deflection of the substrate 60 to be processed can be surely prevented. As described above, according to the present embodiment, the film surface 61 is not adversely affected, and the deflection of the substrate to be processed 6 can be surely prevented, and the processing accuracy of the film surface 61 can be improved. That is, according to the prior art, in order to prevent (largening) the deflection of the substrate 6 to be processed, it is necessary to support the film surface 61' by the substrate support portion of a plurality of pin shapes, thereby having the possibility of adversely affecting the film surface 61. Becomes high. On the other hand, in order to prevent adverse effects on the film surface 61, only the portion (small range) of the film surface 61 removed by the laser light L is supported, and the substrate (9) to be processed is largely deflected. On the other hand, in the state in which the glass substrate 62 is positioned above the film surface 61, the glass substrate 62 of the substrate to be processed 6 is sucked and held from above, and the glass substrate 62 can be held by the adsorption holding portion 丨〇 In the laser light (the portion other than the penetrating portion (see Fig. 8 (b) (e))", the film surface 61 is not adversely affected, and the deflection of the substrate to be processed 6 can be surely prevented. In the present embodiment, the lower end of the laser irradiation device 2 is located above the upper end of the adsorption holding unit 10 (see FIG. 3 and FIG. 3(b)), even if the adsorption holding unit 1 is used. When the rotation driving unit i 5 rotates, the adsorption holding 邛1 〇 does not collide with the laser irradiation device 2, so that the horizontal direction of the adsorption holding unit 10 can be expanded as much as possible, and the treatment can be prevented more reliably. The deflection of the substrate 6〇. 144648.doc 201029785 Thanks to the contact_with the metal plate 14, and the resin sheet provided on the metal plate surface, referring to Fig. 2 (4)), the adsorption holding portion 1 () itself can be prevented by the metal plate 14 having high rigidity. The deflection (4) prevents the substrate to be processed 60 from being damaged by the resin sheet η, or the substrate 6 to be processed is offset when it is rotated. More specifically, as shown in Fig. 2 (8), when the wire joint does not have the metal plate 14 and only the resin member 13 is included, the resin sheet 13 can prevent the substrate to be processed 60 from being scratched or the substrate to be processed 6 from being smashed. The rotation is shifted, but the adsorption holding portion 10 itself has a possibility of deflection. On the other hand, in the present embodiment, as shown in FIG. 2(a), the contact portion 11 has the metal plate 14, and also has the resin sheet 13 provided under the metal plate 4, so that the rigidity is high. The metal plate 14 prevents the adsorption holding portion 1 itself from being bent, and the resin sheet 13 can prevent the substrate to be processed from being scratched or the substrate 60 to be displaced during rotation. As described above, the "according to the present embodiment" does not adversely affect the film surface 61, and the deflection of the substrate to be processed 6 can be surely prevented, and the processing accuracy of the film surface 61 can be improved. effect. However, in the present embodiment, the state in which the portion of the glass substrate 62 that transmits the laser light L is held by the adsorption holding portion 10 is used. However, the present invention is not limited thereto, and at least the holding portion 1 may be adsorbed. The portion corresponding to the edge portion of the film surface 61 includes a member that transmits the laser light L, and the entire surface of the glass substrate 62 is held by the adsorption holding portion 1A. At this time, the bending of the substrate 60 to be processed can be more reliably prevented. In addition, the glass substrate 62 is located on the upper side, and the glass substrate 62 is adsorbed and held from the upper side by the adsorption holding unit 10, and 144648.doc 12· 201029785 is not limited thereto, and may be as shown in FIG. (a) and (b), the glass substrate Μ is located on the lower side of the film surface 61. The glass substrate 62 is adsorbed and held from the lower side by the adsorption holding portion 1 (). According to this configuration, it is difficult to transport the substrate to be processed (10) due to wiring or the like. Therefore, for example, the laser irradiation device 2 is disposed between the pair of conveying portions 1, and the laser irradiation device 2 can be disposed in the pair of conveying portions. Since it moves, the edge part of the film surface 61 can also be processed (refer FIG. l (a) (b) and FIG. 11). Then, at this time, the substrate to be processed 6 is lifted upward from the conveying unit 1, and the substrate 60 to be lifted upward is appropriately rotated by the rotation driving unit 15. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view showing an adsorption holding portion, a rotation driving portion, and a laser irradiation device of a substrate processing apparatus according to an embodiment of the present invention; and FIGS. 2(a) and (b) are views showing the present invention. Fig. 3 (a) and (b) are plan views of the substrate processing apparatus according to the embodiment of the present invention as seen from above, and seen from the side, and Fig. 3 (a) and (b) are side views of the substrate processing apparatus according to the embodiment of the present invention. 4(a) and 4(b) are side views showing the timing of positioning the substrate to be processed by the positioning portion and the time of adsorption holding by the adsorption holding portion in the substrate processing apparatus according to the embodiment of the present invention. 5(a) to 5(c) are diagrams showing the timing of positioning the substrate to be processed by the positioning portion and the side of the point of adsorption holding by the adsorption holding portion in the substrate processing apparatus according to another example of the embodiment of the present invention. 6(a) and 6(b) are plan views showing the upper edge of the film surface of the substrate to be processed processed by the substrate processing apparatus according to the embodiment of the present invention, and 144648.doc -13 - 201029785 laser irradiation FIG. 7 is a top plan view showing a state in which the edge portion of the film surface of the substrate to be processed is processed by the substrate processing apparatus according to the embodiment of the present invention; FIG. 8(a) to (e) show the borrowing. The substrate processing apparatus according to the embodiment of the present invention sequentially processes the upper side of the edge of the film surface of the substrate to be processed. FIG. 9 is a view showing the substrate processing apparatus of the other embodiment of the present invention. FIG. 10(a) and (b) are side views of a substrate processing apparatus according to still another embodiment of the embodiment of the present invention as seen from the side; and FIG. 11 is a perspective view of the present invention. The substrate processing apparatus according to still another example of the embodiment is a plan view seen from above. [Description of main component symbols] 1 Transfer section 10 Adsorption holding section 11 Abutment part 12 Adsorption section 13 Resin sheet 13' Resin member 14 Metal plate 15 Rotary drive unit 20 Laser irradiation device 22 Laser moving portion 144648.doc 201029785 51 ' 5s positioning portion 60 processed substrate 61 film surface 61 a, 61 b edge portion 62 substrate L laser diaphragm 144648.doc -15-

Claims (1)

201029785 七、申請專利範圍： 1. 一種基板處理裝置’其係處理包含基板與設於該基板之 膜面之被處理基板中該膜面之緣部者，其特徵為具備： 在前述膜面位於前述基板之另一側之狀態下，從一側 吸附保持前述被處理基板之吸附保持部； 照射雷射光之雷射照射裝置；及 使前述雷射照射裝置移動之雷射移動部；且 藉由一面從前述雷射照射裝置照射雷射光，一面使該 雷射照射裝置移動，而處理以前述吸附保持部所保持之 前述被處理基板中前述膜面之緣部。 2.如請求項1之基板處理裝置，其中進而具備夾持並定位 前述被處理基板之一對定位部； 刖述吸附保持部係從一側吸附保持以前述定位部夾持 之前述被處理基板； 前述定位部係在以前述吸附保持部保持前述被處理基 板後，釋放該被處理基板。 3·如請求項1之基板處理裝置，其中 丹肀進而具備藉由使前述 吸附保持部旋轉而使前诚姑虚碑並> ^ . 1疋珂述被處理基板旋轉之旋轉驅動 町衣置照射雷射光，一面名 雷射照射裝置沿著特定方 方向移動，而處理前述被處ϋ 板之緣部’接著，藉由針、+-_^±± 猎由前述紅轉驅動部使前述 基板旋轉後，一面踨‘、+、疮ώ 优耵連被處 面從别述雷射照射裝置照射雷射光， 面使該雷射昭射裝要.儿#义 射裳置沿著前述特定方向移動，而處理 144648.doc 201029785 被處理基板之另一緣部。 4. 如請求項3之基板處理裝置，其中前述雷射照射裝置之 下端，位於比前述吸附保持部之端部更靠近一側。 5. 如請求項1之基板處理裝置，其中前述吸附保持部包 含：與前述被處理基板抵接之抵接部，及設於該抵接部 面内之複數之吸附部； 前述抵接部包含金屬板、及設於該金屬板之下面之樹 脂片。 6· -種基板處理方法’其係處理包含基板與設於該基板之Q 膜面之被處理基板中該膜面之緣部者，其特徵為具備： 藉由前述吸附保持部，在前述膜面位於前述基板之另 一側之狀態下，從一侧吸附保持前述被處理基板之 驟； ’ 從雷射照射裝置照射雷射光之步驟；及 藉由雷射移動部，使前述雷射照射裝置於水平方向 動之步驟；且 °矛多 藉由一面從前述雷射照射裴置昭射 蛋射ί、、、射裝置移動，而虚, I, 處以前述吸附保持部所保持之 則述被處理基板中前述膜面之緣部。 7. 如請求項6之基板處理方法，苴 德，n V, /、糸在藉由疋位部夾持 ί進订從一側吸附保持前述被處理基板之步驟，接 者，藉由該定位部釋放該被處理基板。 楼 8. 如請求項6之基板處理方法，其係藉由一 照射裝置照射雷射光，1 述雷射 俛忑笛射照射裝置沿著特定 144648.doc -2 · 201029785201029785 VII. Patent Application Range: 1. A substrate processing apparatus for processing a substrate including a substrate and a film surface of a substrate to be processed on a film surface of the substrate, wherein the film surface is located on the film surface a state in which the other side of the substrate is in contact with the adsorption holding portion of the substrate to be processed from one side; a laser irradiation device that irradiates the laser beam; and a laser moving portion that moves the laser irradiation device; While the laser beam is irradiated from the laser irradiation device, the laser irradiation device is moved to process the edge portion of the film surface in the substrate to be processed held by the adsorption holding portion. 2. The substrate processing apparatus according to claim 1, further comprising: locating and positioning one of the pair of substrates to be processed; and ???said adsorption holding portion sucking and holding the substrate to be processed held by the positioning portion from one side The positioning unit releases the substrate to be processed after the substrate to be processed is held by the adsorption holding unit. 3. The substrate processing apparatus according to claim 1, wherein the tanzanite further includes a rotation of the substrate to be processed by rotating the adsorption holding portion and > Irradiating the laser light, the laser irradiation device is moved in a specific direction, and the edge portion of the slab is processed. Then, the substrate is driven by the red rotation driving portion by a needle, +-_^±± After the rotation, the 踨', +, and ώ ώ 耵 被 被 被 被 被 被 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从 从While processing 144648.doc 201029785 is the other edge of the substrate being processed. 4. The substrate processing apparatus of claim 3, wherein the lower end of the laser irradiation device is located closer to an end than the end of the adsorption holding portion. 5. The substrate processing apparatus according to claim 1, wherein the adsorption holding unit includes: an abutting portion that abuts against the substrate to be processed; and a plurality of adsorption portions provided in a surface of the abutting portion; wherein the abutting portion includes a metal plate and a resin sheet disposed under the metal plate. a substrate processing method for processing a substrate including a substrate and a substrate surface of a Q film provided on the substrate; wherein the film is provided by the adsorption holding portion a step of adsorbing and holding the substrate to be processed from one side in a state where the surface is located on the other side of the substrate; 'the step of irradiating the laser light from the laser irradiation device; and the laser irradiation device by the laser moving portion a step of moving in a horizontal direction; and the spear is processed by the above-mentioned adsorption holding portion by the above-mentioned adsorption holding portion by one side of the laser irradiation from the laser irradiation, and the moving device is moved. The edge of the film surface in the substrate. 7. The substrate processing method according to claim 6, wherein the n, n V, /, 糸 are accommodating and holding the substrate to be processed from one side by the clamping portion, and the picking is performed by the positioning The portion of the substrate to be processed is released. 8. The substrate processing method of claim 6, wherein the laser light is irradiated by an illumination device, and the laser radiation device is along a specific 144648.doc -2 · 201029785 方向移動，而處理前述被處理基板之一緣部，接著，以 旋轉驅動部使前述被處理基板旋轉後，藉由一面從前述 雷射照射裝置照射雷射光，一面使該雷射照射裝置沿著 前述特定方向移動，而處理該被處理基板之另一緣部。 144648.docMoving in the direction to process one edge of the substrate to be processed, and then rotating the substrate to be processed by the rotation driving unit, and then irradiating the laser beam from the laser irradiation device while the laser irradiation device is irradiated The specific direction is moved to process the other edge of the substrate to be processed. 144648.doc
TW98138676A 2008-11-13 2009-11-13 A substrate processing apparatus and a substrate processing method TWI469840B (en)

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