TWI469840B - A substrate processing apparatus and a substrate processing method - Google Patents

A substrate processing apparatus and a substrate processing method Download PDF

Info

Publication number
TWI469840B
TWI469840B TW98138676A TW98138676A TWI469840B TW I469840 B TWI469840 B TW I469840B TW 98138676 A TW98138676 A TW 98138676A TW 98138676 A TW98138676 A TW 98138676A TW I469840 B TWI469840 B TW I469840B
Authority
TW
Taiwan
Prior art keywords
substrate
processed
irradiation device
film surface
laser irradiation
Prior art date
Application number
TW98138676A
Other languages
Chinese (zh)
Other versions
TW201029785A (en
Inventor
Hirohisa Kanbe
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of TW201029785A publication Critical patent/TW201029785A/en
Application granted granted Critical
Publication of TWI469840B publication Critical patent/TWI469840B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/0869Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/10Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

基板處理裝置及基板處理方法Substrate processing apparatus and substrate processing method

本發明係關於基板處理裝置及基板處理方法,其係對具有基板與設於該基板之膜面之被處理基板中該膜面之緣部照射雷射光而進行處理。The present invention relates to a substrate processing apparatus and a substrate processing method for irradiating laser light with an edge of the film surface of a substrate to be processed on a film surface of the substrate, and processing the laser beam.

本申請案係對2008年11月13日申請之日本特願2008-291064號主張優先權,此處該特願2008-291064號之所有內容作為參考併入本文中。The present application claims priority to Japanese Patent Application No. 2008-291064, the entire disclosure of which is hereby incorporated by reference.

迄今為止,已知一種基板處理裝置,其係對具有基板與設於基板之膜面之被處理基板中的膜面照射雷射光者,具備:照射雷射光之雷射照射裝置;在將膜面定位於下方之狀態下只支持被處理基板之周緣部之台座;及從下方支持置於該台座之被處理基板之膜面,使被處理基板保持於平坦狀態之保持機構;該保持機構具有複數之銷形狀之基板支持部(參照日本特開2001-111078號公報及日本特開2002-280578號公報)。Heretofore, there has been known a substrate processing apparatus which is provided with a laser irradiation apparatus that irradiates laser light to a film surface having a substrate and a substrate to be processed provided on a film surface of the substrate; a pedestal that supports only the peripheral portion of the substrate to be processed, and a holding mechanism that supports the film surface of the substrate to be processed placed on the pedestal to hold the substrate to be processed in a flat state, and has a plurality of holding mechanisms A substrate supporting portion having a pin shape (refer to Japanese Laid-Open Patent Publication No. 2001-111078 and JP-A-2002-280578).

但,如先前技術般之利用銷形狀之基板支持部支持膜面時,由於基板支持部之押壓力而有對膜面產生不良影響之可能性。另,將大型化之被處理基板以均一面保持有其困難,被處理基板會撓曲,膜面之處理精度變差。特別在加工膜面之緣部時,變得只以內部膜面支持被加工基板,給膜面帶來之不良影響變得更大。However, when the film surface is supported by the substrate supporting portion of the pin shape as in the prior art, there is a possibility that the film surface is adversely affected by the pressing force of the substrate supporting portion. Further, it is difficult to hold the enlarged substrate to be processed on one side, and the substrate to be processed is deflected, and the processing accuracy of the film surface is deteriorated. In particular, when the edge portion of the film surface is processed, the substrate to be processed is supported only by the inner film surface, and the adverse effect on the film surface is further increased.

本發明係考慮到如上之點而完成者,其目的在於提供一種基板處理裝置及使用此種基板處理裝置之基板處理方法,其可在不對膜面帶來不良影響下,確實地防止被處理基板之撓曲,進而提高膜面之處理精度。The present invention has been made in view of the above points, and an object thereof is to provide a substrate processing apparatus and a substrate processing method using the substrate processing apparatus, which can reliably prevent a substrate to be processed without adversely affecting a film surface The deflection increases the processing precision of the film surface.

本發明之基板處理裝置,係處理包含基板與設於該基板之膜面之被處理基板中該膜面之緣部者,其具備:在前述膜面位於前述基板之另一側之狀態下,從一側吸附保持前述被處理基板之吸附保持部;照射雷射光之雷射照射裝置;及使前述雷射照射裝置移動之雷射移動部;且藉由一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置移動,而處理以前述吸附保持部所保持之前述被處理基板中前述膜面之緣部。In the substrate processing apparatus of the present invention, the edge of the film surface of the substrate to be processed including the substrate and the film surface of the substrate is processed, and the film surface is placed on the other side of the substrate. An adsorption holding portion that adsorbs and holds the substrate to be processed from one side; a laser irradiation device that irradiates the laser beam; and a laser moving portion that moves the laser irradiation device; and irradiates the laser beam from the laser irradiation device While the laser irradiation device is moved, the edge portion of the film surface in the substrate to be processed held by the adsorption holding portion is processed.

本發明之基板處理裝置,亦可進而具備夾持並定位前述被處理基板之一對定位部;前述吸附保持部從一側吸附保持以前述定位部夾持之前述被處理基板;前述定位部係在以前述吸附保持部保持前述被處理基板後,釋放該被處理基板。Further, the substrate processing apparatus of the present invention may further include: locating and positioning one of the pair of substrates to be processed; and the adsorption holding portion sucking and holding the substrate to be processed sandwiched by the positioning portion from one side; After the substrate to be processed is held by the adsorption holding portion, the substrate to be processed is released.

本發明之基板處理裝置,亦可進而具備藉由使前述吸附保持部旋轉而使前述被處理基板旋轉之旋轉驅動部;且藉由一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著特定方向移動,而處理前述被處理基板之一緣部,接著,藉由前述旋轉驅動部使前述被處理基板旋轉後,一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著前述特定方向移動,而處理該被處理基板之另一緣部。Further, the substrate processing apparatus of the present invention may further include a rotation driving unit that rotates the substrate to be processed by rotating the adsorption holding unit, and the laser beam is irradiated from the laser irradiation device while the laser beam is irradiated from the laser irradiation device. The irradiation device moves in a specific direction to process one edge of the substrate to be processed, and then, after the substrate is rotated by the rotation driving unit, the laser beam is irradiated from the laser irradiation device while the laser beam is irradiated The radiation irradiation device moves in the specific direction described above, and processes the other edge portion of the substrate to be processed.

如此基板處理裝置中,前述雷射照射裝置之下端,亦可位於比前述吸附保持部之端部更靠近一側。In the substrate processing apparatus as described above, the lower end of the laser irradiation device may be located closer to the side than the end portion of the adsorption holding portion.

本發明之基板處理裝置中,前述吸附保持部亦可包含:與前述被處理基板抵接之抵接部,及設於該抵接部面內之複數之吸附部;前述抵接部亦可包含金屬板、及設於該金屬板之下面之樹脂片。In the substrate processing apparatus of the present invention, the adsorption holding unit may include an abutting portion that abuts against the substrate to be processed, and a plurality of adsorption portions that are provided in the surface of the abutting portion, and the abutting portion may include a metal plate and a resin sheet disposed under the metal plate.

本發明之基板處理方法,係處理包含基板與設於該基板之膜面之被處理基板中該膜面之緣部者,其中具備:藉由吸附保持部,在前述膜面位於前述基板之另一側之狀態下,從一側吸附保持前述被處理基板之步驟;從雷射照射裝置照射雷射光之步驟;及藉由雷射移動部,使前述雷射照射裝置於水平方向移動之步驟;且藉由一面從前述雷射照射裝置照射雷射,一面使前述雷射照射裝置移動,而處理以前述吸附保持部所保持之前述被處理基板中前述膜面之緣部。In the substrate processing method of the present invention, the edge portion of the film surface including the substrate and the substrate to be processed on the film surface of the substrate is processed, and the film holding surface is located on the substrate by the adsorption holding portion. a step of adsorbing and holding the substrate to be processed from one side in a state of one side; a step of irradiating the laser light from the laser irradiation device; and a step of moving the laser irradiation device in a horizontal direction by the laser moving portion; Further, while irradiating the laser light from the laser irradiation device, the laser irradiation device is moved to process the edge portion of the film surface in the substrate to be processed held by the adsorption holding portion.

本發明之基板處理方法中,亦可在藉由定位部夾持後,進行從一側吸附保持前述被處理基板之步驟,接著,藉由該定位部釋放該被處理基板。In the substrate processing method of the present invention, the substrate to be processed may be adsorbed and held from one side after being sandwiched by the positioning portion, and then the substrate to be processed may be released by the positioning portion.

本發明之基板處理方法中,亦可藉由一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著特定方向移動,而處理前述被處理基板之一緣部,接著,以旋轉驅動部使前述被處理基板旋轉後,藉由一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著前述特定方向移動,而處理該被處理基板之另一緣部。In the substrate processing method of the present invention, one of the edge portions of the substrate to be processed may be processed by irradiating the laser beam from the laser irradiation device while moving the laser beam in a specific direction. The rotation drive unit rotates the substrate to be processed, and then irradiates the laser light from the laser irradiation device while moving the laser irradiation device in the specific direction to process the other edge portion of the substrate to be processed.

根據本發明,在基板位於膜面上方之狀態下,藉由吸附保持部從上方吸附保持該基板,而藉由從雷射照射裝置照射之雷射光處理膜面之緣部,因此不會給膜面帶來不良影響,可確實地防止被處理基板之撓曲,進而可使膜面之處理精度提高。According to the invention, in the state in which the substrate is positioned above the film surface, the substrate is adsorbed and held from above by the adsorption holding portion, and the edge portion of the film surface is treated by the laser light irradiated from the laser irradiation device, so that the film is not applied. The surface adversely affects the deflection of the substrate to be processed, and the processing accuracy of the film surface can be improved.

以下,關於本發明之基板處理裝置及基板處理方法之實施形態,參照附圖說明。此處,圖1至圖11係關於本發明之實施形態之圖。Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method of the present invention will be described with reference to the drawings. Here, Fig. 1 to Fig. 11 are views showing an embodiment of the present invention.

基板處理裝置係用以處理具有玻璃基板(基板) 62與設於玻璃基板62之膜面61之被處理基板60中膜面61之緣部61a、61b(參照圖1)。再者,作為如此被處理基板60,例如可舉出用於薄膜太陽電池之基板。The substrate processing apparatus is for processing the edge portions 61a and 61b (see FIG. 1) of the film surface 61 in the substrate 60 to be processed having the glass substrate (substrate) 62 and the film surface 61 provided on the glass substrate 62. Further, as the substrate 60 to be processed as described above, for example, a substrate for a thin film solar cell can be cited.

如圖1及圖3(a)(b)所示,基板處理裝置具備:在玻璃基板62位於膜面61上方(一側)之狀態下,從上方(一側)吸附保持被處理基板60之吸附保持部10(參照圖1);照射雷射光L之雷射照射裝置20(參照圖1);使雷射照射裝置20於水平方向移動之雷射移動部22(參照圖3(a)(b))。再者,圖3(a)係本實施形態之基板處理裝置從上方所見之上方平面圖,圖3(b)係該基板處理裝置從側面所見之側面圖。As shown in FIG. 1 and FIG. 3 (a) and (b), the substrate processing apparatus includes a substrate 60 that is held and held from above (one side) in a state in which the glass substrate 62 is located above (on one side of) the film surface 61. The adsorption holding unit 10 (see FIG. 1); the laser irradiation device 20 that irradiates the laser light L (see FIG. 1); and the laser moving unit 22 that moves the laser irradiation device 20 in the horizontal direction (refer to FIG. 3(a) ( b)). 3(a) is a plan view of the substrate processing apparatus of the present embodiment as seen from above, and FIG. 3(b) is a side view of the substrate processing apparatus as seen from the side.

此處,基板處理裝置,係藉由一面從雷射照射裝置20照射雷射光L,一面使該雷射照射裝置20沿著特定方向移動,以處理藉由吸附保持部10保持之被處理基板60之膜面61之緣部61a、61b之方式而構成(參照圖6(a)(b)及圖7)。Here, the substrate processing apparatus moves the laser irradiation device 20 in a specific direction while irradiating the laser beam L from the laser irradiation device 20 to process the substrate 60 to be processed held by the adsorption holding portion 10. The edge portions 61a and 61b of the film surface 61 are configured as described above (see FIGS. 6(a) and (b) and FIG. 7).

再者,圖6(a)係顯示藉由本實施形態之基板處理裝置所要處理之緣部61a、61b之範圍之上方平面圖,圖6(b)係顯示雷射照射裝置20之移動之側面圖。另,圖7係將藉由本實施形態之基板處理裝置處理膜面61之緣部61a、61b之樣態放大之上方平面圖。再者,圖7之符號S係表示從雷射照射裝置20照射於膜面61之緣部61a、61b之雷射光L之雷射點。Further, Fig. 6(a) is a plan view showing the upper side of the range of the edge portions 61a and 61b to be processed by the substrate processing apparatus of the present embodiment, and Fig. 6(b) is a side view showing the movement of the laser irradiation device 20. In addition, Fig. 7 is an upper plan view showing an enlarged state of the edge portions 61a and 61b of the film surface 61 by the substrate processing apparatus of the present embodiment. Further, the symbol S in Fig. 7 indicates the laser spot of the laser light L irradiated from the edge portions 61a and 61b of the film surface 61 from the laser irradiation device 20.

另,吸附保持部10係以從上方吸附保持藉由定位部5s、5l(後述)所夾持之被處理基板60之方式而構成(參照圖4(a)(b)),另一方面,定位部5s、5l係以在藉由吸附保持部10保持被處理基板60後,釋放該被處理基板60之方式而構成。Further, the adsorption holding unit 10 is configured to suck and hold the substrate 60 to be processed which is sandwiched by the positioning portions 5s and 5l (described later) from above (see FIGS. 4(a) and 4(b)). The positioning portions 5s and 5l are configured to hold the substrate 60 to be processed by the adsorption holding unit 10 and then release the substrate 60 to be processed.

另,如圖1所示,於吸附保持部10之上部,設有藉由使該吸附保持部10旋轉而使被處理基板60旋轉之旋轉驅動部15。再者,本實施形態中,雖使用於吸附保持部10之上部設有旋轉驅動部15之樣態進行說明,但不限於此,例如亦可使用使雷射照射裝置20與雷射移動部22相對於吸附保持部10旋轉之樣態。Further, as shown in FIG. 1, a rotation driving unit 15 that rotates the substrate to be processed 60 by rotating the adsorption holding unit 10 is provided on the upper portion of the adsorption holding unit 10. In the present embodiment, the rotation driving unit 15 is provided on the upper portion of the adsorption holding unit 10. However, the present invention is not limited thereto. For example, the laser irradiation unit 20 and the laser moving unit 22 may be used. The state of rotation with respect to the adsorption holding portion 10.

另,如圖1及圖3(b)所示,雷射照射裝置20之下端位於比吸附保持部10之上端更上方(比端部更靠近一側),而構成為即使在使吸附保持部10藉由旋轉驅動部15旋轉時,吸附保持部10與雷射照射裝置20亦不會發生碰撞。Further, as shown in FIG. 1 and FIG. 3(b), the lower end of the laser irradiation device 20 is located above the upper end of the adsorption holding portion 10 (on the side closer to the end portion), and is configured to be even in the adsorption holding portion. When the rotation driving unit 15 rotates, the adsorption holding unit 10 does not collide with the laser irradiation device 20.

另,如圖2(a)所示,吸附保持部10具有與被處理基板60抵接之抵接部11,及設於該抵接部11之面內之複數吸附部12。再者,本實施形態中,抵接部11具有金屬板14,及設於該金屬板14下面之樹脂片13。Further, as shown in FIG. 2( a ), the adsorption holding unit 10 has an abutting portion 11 that abuts against the substrate 60 to be processed, and a plurality of adsorption portions 12 that are provided in the surface of the abutting portion 11 . Further, in the present embodiment, the abutting portion 11 has a metal plate 14 and a resin sheet 13 provided on the lower surface of the metal plate 14.

另,如圖3(a)(b)所示,於雷射照射裝置20及雷射移動部22之上游側,設有搬送被處理基板60之一對搬送部1。另,於搬送部1附近,設有在搬送方向夾持被處理基板60進行定位之一對定位部5l,及在與搬送方向正交之方向夾持被處理基板60進行定位之二對定位部5s。Further, as shown in FIGS. 3(a) and 3(b), one of the transport unit 1 for transporting the substrate to be processed 60 is provided on the upstream side of the laser irradiation device 20 and the laser moving unit 22. Further, in the vicinity of the transport unit 1, a pair of positioning portions 51 that are positioned to sandwich the substrate 60 in the transport direction and that are positioned to sandwich the substrate 60 in the direction orthogonal to the transport direction are provided. 5s.

接著,就形成如此構成之本實施形態之作用進行陳述。並且,後述之說明所使用之圖8(a)-(e)中,為簡化附圖,只顯示一個雷射照射裝置20與雷射移動部22,但本實施形態係使用如圖3(a)之一對雷射照射裝置20與雷射移動部22。Next, the effect of the present embodiment thus constituted will be described. Further, in Figs. 8(a) to 8(e) used for the description, which will be described later, only one laser irradiation device 20 and the laser moving portion 22 are shown for simplification of the drawing, but this embodiment is as shown in Fig. 3 (a). One of the pair of laser irradiation devices 20 and the laser moving portion 22.

首先,藉由搬送部1,搬送作為處理對象之被處理基板60(參照圖3(a)(b))。然後,被處理基板60搬送至特定位置時,停止搬送部1,藉此停止被處理基板60之搬送。此時,玻璃基板62成為位於膜面61上方之狀態,搬送部1與膜面61中以後述之雷射光L除去之部分抵接。First, the substrate to be processed 60 to be processed is transported by the transport unit 1 (see FIG. 3(a) and (b)). Then, when the substrate to be processed 60 is transported to a specific position, the transport unit 1 is stopped, whereby the transport of the substrate to be processed 60 is stopped. At this time, the glass substrate 62 is placed above the film surface 61, and the conveyance unit 1 is in contact with the portion of the film surface 61 from which the laser light L to be described later is removed.

接著,藉由一對定位部5l,在搬送方向夾持被處理基板60進行定位,且藉由二對定位部5s,在與搬送方向正交之方向夾持被處理基板60進行定位(參照圖3(a)(b)及圖4(a))。Then, the pair of positioning portions 51 l are positioned to sandwich the substrate 60 to be processed in the transport direction, and the pair of positioning portions 5 s are positioned to sandwich the substrate 60 to be aligned in the direction orthogonal to the transport direction (see the figure). 3(a)(b) and Figure 4(a)).

接著,藉由吸附保持部10,從上方吸附保持利用定位部5s、5l夾持之被處理基板60(參照圖4(a)(b))。然後,藉由吸附保持部10保持被處理基板60後,被處理基板60從藉由定位部5s、5l之定位中釋放。因此,藉由吸附保持部10吸附保持被處理基板60時,可防止被處理基板60對吸附保持部10之偏移。Then, the substrate to be processed 60 sandwiched by the positioning portions 5s and 5l is sucked and held from above by the adsorption holding portion 10 (see FIGS. 4(a) and 4(b)). Then, after the substrate 60 to be processed is held by the adsorption holding portion 10, the substrate 60 to be processed is released from the positioning by the positioning portions 5s, 51. Therefore, when the substrate to be processed 60 is adsorbed and held by the adsorption holding portion 10, the offset of the substrate to be processed 60 against the adsorption holding portion 10 can be prevented.

更具體言之,首先,藉由定位部5s、5l進行被處理基板60之定位(參照圖5(a)),接著,若使用釋放被處理基板60後(參照圖5(b)),從上方吸附保持被處理基板60(參照圖5(c))之樣態,則藉由吸附保持部10吸附保持被處理基板60時,有被處理基板60對吸附保持部10偏移之可能性。More specifically, first, the positioning of the substrate 60 to be processed is performed by the positioning portions 5s and 5l (see FIG. 5(a)), and then, after the substrate 60 to be processed is released (see FIG. 5(b)), When the substrate to be processed 60 is sucked and held upward (see FIG. 5( c )), when the substrate 60 to be processed is adsorbed and held by the adsorption holding unit 10 , there is a possibility that the substrate 60 to be processed is displaced from the adsorption holding unit 10 .

關於此點,根據本實施形態,由於藉由吸附保持部10保持被處理基板60後,被處理基板60才從藉由定位部5s、5l之定位中釋放(參照圖4(a)(b)),因此藉由吸附保持部10吸附保持被處理基板60時,可防止被處理基板60對吸附保持部10偏移,進而可將被處理基板60相對吸附保持部10定位於正確之位置。In this regard, according to the present embodiment, after the substrate 60 to be processed is held by the adsorption holding unit 10, the substrate 60 to be processed is released from the positioning by the positioning portions 5s and 51 (refer to FIG. 4(a)(b). Therefore, when the substrate to be processed 60 is adsorbed and held by the adsorption holding portion 10, the substrate to be processed 60 can be prevented from being displaced from the adsorption holding portion 10, and the substrate to be processed 60 can be positioned at the correct position with respect to the adsorption holding portion 10.

藉由如前述之以吸附保持部10保持被處理基板60時,藉由吸附保持部10將被處理基板60搬送至雷射加工位置(參照圖3(b))。When the substrate to be processed 60 is held by the adsorption holding unit 10 as described above, the substrate 60 to be processed is transferred to the laser processing position by the adsorption holding unit 10 (see FIG. 3(b)).

接著,藉由雷射移動部22將雷射照射裝置20於水平方向移動(參照圖6(a)(b)及圖8(a)(b))。然後,此時,從雷射照射裝置20照射雷射光L。如此藉由一面從雷射照射裝置20照射雷射光L,一面使該雷射照射裝置20沿著X方向(特定方向)移動,處理被處理基板60之膜面61之一個緣部61a。Next, the laser irradiation unit 22 is moved in the horizontal direction by the laser moving unit 22 (see FIGS. 6(a) and (b) and FIG. 8(a) and (b). Then, at this time, the laser light L is irradiated from the laser irradiation device 20. By irradiating the laser light L from the laser irradiation device 20, the laser irradiation device 20 is moved in the X direction (specific direction) to process one edge portion 61a of the film surface 61 of the substrate 60 to be processed.

此時之雷射照射裝置20之移動,本實施形態中,沿著X方向移動後,於Y方向之正方向(與X方向正交方向之被處理基板60之內方)移動,接著,變為沿著X方向之方向與方才相反之方向移動(參照圖7及圖8(a)(b))。再者,藉由適當重複如此移動,可在所期望之範圍處理被處理基板60之一個緣部61a。In this embodiment, the movement of the laser irradiation device 20 moves in the X direction and then moves in the positive direction of the Y direction (inside the substrate to be processed 60 orthogonal to the X direction), and then changes. It moves in the direction opposite to the direction in the X direction (see Fig. 7 and Fig. 8(a)(b)). Further, by appropriately repeating such movement, one edge portion 61a of the substrate 60 to be processed can be processed in a desired range.

如前所述,處理被處理基板60之一個緣部61a時,藉由旋轉驅動部15旋轉被處理基板60(參照圖8(c)),之後,再一面從雷射照射裝置20照射雷射光L,一面使雷射照射裝置20沿著X方向移動,處理被處理基板60之另一緣部61b(參照圖8(d)(e))。因此,可儘量縮短雷射照射裝置20之移動距離,可使處理效率提高。As described above, when one edge portion 61a of the substrate 60 to be processed is processed, the substrate 60 to be processed is rotated by the rotation driving unit 15 (see FIG. 8(c)), and then the laser beam is irradiated from the laser irradiation device 20 L, while the laser irradiation device 20 is moved in the X direction, the other edge portion 61b of the substrate 60 to be processed is processed (see Fig. 8 (d) (e)). Therefore, the moving distance of the laser irradiation device 20 can be shortened as much as possible, and the processing efficiency can be improved.

更具體言之,使用不藉由旋轉驅動部15旋轉被處理基板60之裝置時,如圖9之箭頭A1 ~A8 所示,必須使雷射照射裝置20移動,雷射照射裝置20之移動距離變長,處理效率變差。More specifically, when a device that does not rotate the substrate 60 to be processed by the rotation driving portion 15 is used, as shown by arrows A 1 to A 8 in FIG. 9 , the laser irradiation device 20 must be moved, and the laser irradiation device 20 The moving distance becomes longer and the processing efficiency becomes worse.

與此相對,根據本實施形態,由於藉由旋轉驅動部15使被處理基板60旋轉,因此可儘量縮短雷射照射裝置20之移動距離,可使處理效率提高(參照圖8(a)-(e))。On the other hand, according to the present embodiment, since the substrate to be processed 60 is rotated by the rotation driving unit 15, the moving distance of the laser irradiation device 20 can be shortened as much as possible, and the processing efficiency can be improved (refer to Fig. 8(a)-(( e)).

另,根據本實施形態,由於藉由吸附保持部10,在玻璃基板62位於膜面61上方之狀態下,從上方吸附保持被處理基板60之玻璃基板62,因此位於下方之膜面61不用藉由(如先前技術)銷形狀之基板支持部押壓。再者,根據本實施形態,由於可將玻璃基板62中透過雷射光L之部分以外之廣大範圍藉由吸附保持部10而保持,因此可確實防止被處理基板60之撓曲。According to the present embodiment, the glass substrate 62 of the substrate to be processed 60 is sucked and held from above by the adsorption holding portion 10 in a state where the glass substrate 62 is positioned above the film surface 61. Therefore, the film surface 61 located below does not need to be borrowed. The substrate support portion of the pin shape is pressed by (as in the prior art). According to the present embodiment, since the glass substrate 62 can be held by the adsorption holding portion 10 in a wide range other than the portion through which the laser light L is transmitted, the deflection of the substrate 60 to be processed can be surely prevented.

如上所述,根據本實施形態,不會給膜面61帶來不良影響,可確實防止被處理基板60之撓曲,進而可使膜面61之處理精度提高。As described above, according to the present embodiment, the film surface 61 is not adversely affected, and the deflection of the substrate 60 to be processed can be surely prevented, and the processing accuracy of the film surface 61 can be improved.

即,根據先前技術,由於為防止(大型化)被處理基板60之撓曲,有必要藉由多數銷形狀之基板支持部支持膜面61,因此給膜面61帶來不良影響之可能性變高。另一方面,為防止對膜面61產生不良影響,只支持膜面61中以雷射光L除去之部分(狹小範圍)時,被處理基板60變成大幅撓曲。In other words, according to the prior art, in order to prevent (largening) the deflection of the substrate 60 to be processed, it is necessary to support the film surface 61 by the plurality of pin-shaped substrate supporting portions, so that the possibility of adversely affecting the film surface 61 becomes high. On the other hand, in order to prevent the film surface 61 from being adversely affected, only the portion (small range) of the film surface 61 removed by the laser light L is supported, and the substrate to be processed 60 is largely deflected.

與此相對,根據本實施形態,在玻璃基板62位於膜面61上方之狀態下,從上方吸附保持被處理基板60之玻璃基板62,且可藉由吸附保持部10保持玻璃基板62中使雷射光L穿透的部分以外之部分(參照圖8(b)(e)),因此不會對膜面61帶來不良影響,可確實防止被處理基板60之撓曲。On the other hand, in the state in which the glass substrate 62 is positioned above the film surface 61, the glass substrate 62 of the substrate 60 to be processed is adsorbed and held from above, and the glass substrate 62 can be held by the adsorption holding portion 10. The portion other than the portion through which the light L is transmitted (see FIG. 8(b) and (e)) does not adversely affect the film surface 61, and the deflection of the substrate 60 to be processed can be surely prevented.

再者,本實施形態中,因構成為雷射照射裝置20之下端位於比吸附保持部10之上端更上方(參照圖1及圖3(b)),即使在使吸附保持部10藉由旋轉驅動部15旋轉時,吸附保持部10與雷射照射裝置20亦不會發生碰撞,因此可使吸附保持部10之水平方向之大小盡可能的擴大,可更確實防止被處理基板60之撓曲。In the present embodiment, the lower end of the laser irradiation device 20 is located above the upper end of the adsorption holding unit 10 (see FIGS. 1 and 3(b)), even when the adsorption holding portion 10 is rotated. When the driving unit 15 rotates, the adsorption holding unit 10 does not collide with the laser irradiation device 20, so that the horizontal direction of the adsorption holding unit 10 can be expanded as much as possible, and the deflection of the substrate 60 to be processed can be more reliably prevented. .

另,由於抵接部11具有金屬板14,及設於該金屬板14下面之樹脂片13(參照圖2(a)),因此藉由剛性較高之金屬板14可防止吸附保持部10本身撓曲,且藉由樹脂片13可防止被處理基板60刮傷、或被處理基板60於旋轉時偏移。Further, since the abutting portion 11 has the metal plate 14 and the resin sheet 13 provided under the metal plate 14 (see FIG. 2(a)), the adsorption holding portion 10 itself can be prevented by the metal plate 14 having high rigidity. The resin sheet 13 is prevented from being scratched by the resin sheet 13, or is displaced when the substrate 60 is rotated.

更具體言之,如圖2(b)所示,若抵接部11不具有金屬板14而只包含樹脂構件13'時,雖藉由樹脂片13可防止被處理基板60刮傷、或被處理基板60於旋轉時偏移,但吸附保持部10本身亦有撓曲之可能性。More specifically, as shown in FIG. 2(b), when the contact portion 11 does not have the metal plate 14 and only the resin member 13' is included, the resin sheet 13 can prevent the substrate to be processed 60 from being scratched or The processing substrate 60 is displaced at the time of rotation, but the adsorption holding portion 10 itself is also likely to be deflected.

與此相對,本實施形態中,如圖2(a)所示,抵接部11具有金屬板14,且亦具有設於該金屬板14下面之樹脂片13,因此藉由剛性較高之金屬板14可防止吸附保持部10本身撓曲,且藉由樹脂片13可防止被處理基板60刮傷、或被處理基板60於旋轉時偏移。On the other hand, in the present embodiment, as shown in FIG. 2(a), the abutting portion 11 has the metal plate 14, and also has the resin sheet 13 provided under the metal plate 14, so that the metal is made of a relatively high rigidity. The plate 14 can prevent the adsorption holding portion 10 from flexing itself, and the resin sheet 13 can prevent the substrate to be processed 60 from being scratched or the substrate 60 to be processed from being displaced during rotation.

如上所述,根據本實施形態,不會給膜面61帶來不良影響,可確實防止被處理基板60之撓曲,進而可使膜面61之處理精度提高,進而可得到如前述之各種效果。As described above, according to the present embodiment, the film surface 61 can be prevented from being adversely affected, and the deflection of the substrate 60 can be surely prevented, and the processing accuracy of the film surface 61 can be improved, and various effects as described above can be obtained. .

但,本實施形態中,雖使用將玻璃基板62中透射雷射光L之部分以外藉由吸附保持部10保持之樣態進行了說明,但不限於此,亦可吸附保持部10之至少與膜面61之緣部對應之部分包含透射雷射光L之構件,以吸附保持部10保持玻璃基板62之整個面。此時,可更確實防止被加工基板60之撓曲。However, in the present embodiment, the state in which the portion of the glass substrate 62 that transmits the laser light L is held by the adsorption holding portion 10 is used. However, the present invention is not limited thereto, and at least the film of the holding portion 10 may be adsorbed. The portion corresponding to the edge portion of the surface 61 includes a member that transmits the laser light L, and the adsorption holding portion 10 holds the entire surface of the glass substrate 62. At this time, the deflection of the substrate 60 to be processed can be more reliably prevented.

另,前述雖使用玻璃基板62位於上方側,藉由吸附保持部10從上方側吸附保持該玻璃基板62之樣態進行了說明,但不限於此,亦可如圖10(a)(b)所示,玻璃基板62位於膜面61之下方側,藉由吸附保持部10從下方側吸附保持該玻璃基板62。In addition, although the glass substrate 62 is located on the upper side and the glass substrate 62 is adsorbed and held from the upper side by the adsorption holding unit 10, the present invention is not limited thereto, and as shown in FIG. 10(a)(b). As shown in the figure, the glass substrate 62 is located below the film surface 61, and the glass substrate 62 is adsorbed and held from the lower side by the adsorption holding portion 10.

根據如此構成,由於因配線等關係搬送被加工基板60較困難,故例如將雷射照射裝置20配置於一對搬送部1之間,該雷射照射裝置20可在一對搬送部1間移動,因此亦可處理膜面61之緣部(參照圖10(a)(b)及圖11)。然後,此時,從搬送部1向上方抬起被加工基板60,向上方抬起之被加工基板60藉由旋轉驅動部15適當旋轉。According to this configuration, it is difficult to transport the substrate 60 by wiring or the like. Therefore, for example, the laser irradiation device 20 is disposed between the pair of transport units 1, and the laser irradiation device 20 can move between the pair of transport units 1. Therefore, the edge portion of the film surface 61 can also be processed (see FIGS. 10(a)(b) and 11). Then, at this time, the substrate 60 to be processed is lifted upward from the transport unit 1, and the substrate 60 that has been lifted upward is appropriately rotated by the rotary drive unit 15.

1...搬送部1. . . Transport department

10...吸附保持部10. . . Adsorption holding unit

11...抵接部11. . . Abutment

12...吸附部12. . . Adsorption section

13...樹脂片13. . . Resin sheet

13'...樹脂構件13'. . . Resin member

14...金屬板14. . . Metal plate

15...旋轉驅動部15. . . Rotary drive

20...雷射照射裝置20. . . Laser irradiation device

22...雷射移動部twenty two. . . Laser moving department

5l、5s...定位部5l, 5s. . . Positioning department

60...被處理基板60. . . Substrate to be processed

61...膜面61. . . Membrane surface

61a、61b...緣部61a, 61b. . . Edge

62...基板62. . . Substrate

L...雷射光L. . . laser

圖1係顯示本發明之實施形態之基板處理裝置之吸附保持部、旋轉驅動部及雷射照射裝置之側面圖;1 is a side view showing an adsorption holding portion, a rotation driving portion, and a laser irradiation device of a substrate processing apparatus according to an embodiment of the present invention;

圖2(a)、(b)係顯示本發明之實施形態之基板處理裝置之吸附保持部及旋轉驅動部之側面剖面圖;2(a) and 2(b) are side cross-sectional views showing the adsorption holding portion and the rotation driving portion of the substrate processing apparatus according to the embodiment of the present invention;

圖3(a)、(b)係本發明之實施形態之基板處理裝置從上方所見之上方平面圖,及從側面所見之側面圖;3(a) and 3(b) are a plan view of the substrate processing apparatus according to the embodiment of the present invention as seen from above, and a side view seen from the side;

圖4(a)、(b)係顯示本發明之實施形態之基板處理裝置中,藉由定位部定位被處理基板之時點,及藉由吸附保持部進行吸附保持之時點之側面圖;4(a) and 4(b) are side views showing the timing at which the substrate to be processed is positioned by the positioning portion and the time at which the adsorption holding portion is suction-held in the substrate processing apparatus according to the embodiment of the present invention;

圖5(a)~(c)係顯示本發明之實施形態之其他例之基板處理裝置中,藉由定位部定位被處理基板之時點,及藉由吸附保持部進行吸附保持之時點之側面圖;5(a) to 5(c) are side views showing the timing at which the substrate to be processed is positioned by the positioning portion and the time at which adsorption is held by the adsorption holding portion in the substrate processing apparatus according to another example of the embodiment of the present invention. ;

圖6(a)、(b)係顯示藉由本發明之實施形態之基板處理裝置處理之被處理基板之膜面之緣部範圍之上方平面圖,及雷射照射裝置之移動之側面圖;6(a) and 6(b) are plan views showing the upper side of the edge portion of the film surface of the substrate to be processed which are processed by the substrate processing apparatus according to the embodiment of the present invention, and a side view showing the movement of the laser irradiation device;

圖7係藉由本發明之實施形態之基板處理裝置處理被處理基板之膜面之緣部之樣態放大之上方平面圖;Figure 7 is a plan view showing an enlarged top view of the edge portion of the film surface of the substrate to be processed by the substrate processing apparatus according to the embodiment of the present invention;

圖8(a)~(e)係顯示藉由本發明之實施形態之基板處理裝置,依次處理被處理基板之膜面之緣部之樣態之上方平面圖;8(a) to 8(e) are plan views showing a state in which the edge portion of the film surface of the substrate to be processed is sequentially processed by the substrate processing apparatus according to the embodiment of the present invention;

圖9係顯示藉由本發明之實施形態之其他例之基板處理裝置,依次處理被處理基板之膜面之緣部之樣態之上方平面圖;FIG. 9 is a plan view showing a state in which the edge portion of the film surface of the substrate to be processed is sequentially processed by the substrate processing apparatus according to another example of the embodiment of the present invention;

圖10(a)、(b)係本發明之實施形態之再其他例之基板處理裝置從側面所見之側面圖;及10(a) and 10(b) are side views of the substrate processing apparatus according to still another example of the embodiment of the present invention as seen from the side; and

圖11係本發明之實施形態之再其他例之基板處理裝置從上方所見之上方平面圖。Fig. 11 is a plan view of the substrate processing apparatus according to still another example of the embodiment of the present invention as seen from above.

10...吸附保持部10. . . Adsorption holding unit

15...旋轉驅動部15. . . Rotary drive

20...雷射照射裝置20. . . Laser irradiation device

60...被處理基板60. . . Substrate to be processed

61...膜面61. . . Membrane surface

61a、61b...緣部61a, 61b. . . Edge

62...基板62. . . Substrate

L...雷射光L. . . laser

Claims (11)

一種基板處理裝置,其係處理包含基板與設於該基板之膜面之被處理基板中該膜面之緣部者,其特徵為具備:運送部,其在前述膜面位於前述基板之下側之狀態下,運送前述被處理基板至前述定位部;一對定位部,其在前述膜面位於前述基板之下側之狀態下,夾持並定位前述運送部所運送之前述被處理基板;吸附保持部,其在前述膜面位於前述基板之下側之狀態下,從上側吸附保持以前述一對定位部所定位之前述被處理基板;雷射照射裝置,其照射雷射光;及雷射移動部,其使前述雷射照射裝置移動;且藉由一面以使雷射光從前述雷射照射裝置通過前述基板之方式進行照射,一面使該雷射照射裝置移動,而藉由通過前述基板之雷射光處理以前述吸附保持部所保持之前述被處理基板中前述膜面之緣部;前述定位部係在以前述吸附保持部保持前述被處理基板後,釋放該被處理基板。 A substrate processing apparatus for processing an edge portion of the film surface including a substrate and a substrate to be processed on a film surface of the substrate, wherein the film processing device includes a transport portion that is located on a lower side of the substrate a state in which the substrate to be processed is transported to the positioning portion, and a pair of positioning portions sandwich and position the substrate to be processed conveyed by the transport portion while the film surface is located below the substrate; a holding portion that sucks and holds the substrate to be processed positioned by the pair of positioning portions from a top side in a state where the film surface is located on a lower side of the substrate; a laser irradiation device that irradiates laser light; and a laser beam a portion that moves the laser irradiation device and that causes the laser beam to be irradiated from the laser irradiation device through the substrate to move the laser irradiation device while passing through the substrate The illuminating treatment is performed on the edge portion of the film surface in the substrate to be processed held by the adsorption holding portion, and the positioning portion is held by the adsorption holding portion After the substrate, releasing the substrate to be processed. 如請求項1之基板處理裝置,其中前述運送部係僅抵接前述膜面中以雷射光除去之部分。 The substrate processing apparatus of claim 1, wherein the transport portion abuts only a portion of the film surface that is removed by laser light. 如請求項1之基板處理裝置,其進而具備藉由使前述吸附保持部旋轉而使前述被處理基板旋轉之旋轉驅動部。 The substrate processing apparatus according to claim 1, further comprising a rotation driving unit that rotates the substrate to be processed by rotating the adsorption holding unit. 如請求項3之基板處理裝置,其中藉由一面從前述雷射照 射裝置照射雷射光,一面使該雷射照射裝置沿著特定方向移動,而處理前述被處理基板之一緣部,接著,藉由前述旋轉驅動部使前述被處理基板旋轉後,一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著前述特定方向移動,而處理該被處理基板之另一緣部。 The substrate processing apparatus of claim 3, wherein the laser light is irradiated from the foregoing The projecting device irradiates the laser beam and moves the laser irradiation device in a specific direction to process one edge of the substrate to be processed, and then rotates the substrate to be processed by the rotation driving portion The radiation irradiation device irradiates the laser light, and moves the laser irradiation device in the specific direction to process the other edge portion of the substrate to be processed. 如請求項4之基板處理裝置,其中前述雷射照射裝置之下端,位於比前述吸附保持部之端部更靠近上側。 The substrate processing apparatus of claim 4, wherein the lower end of the laser irradiation device is located closer to the upper side than the end of the adsorption holding portion. 如請求項1之基板處理裝置,其中前述吸附保持部包含:與前述被處理基板抵接之抵接部,及設於該抵接部面內之複數之吸附部;前述抵接部包含金屬板、及設於該金屬板之下面之樹脂片。 The substrate processing apparatus according to claim 1, wherein the adsorption holding unit includes: an abutting portion that abuts against the substrate to be processed; and a plurality of adsorption portions provided in a surface of the abutting portion; the abutting portion includes a metal plate And a resin sheet disposed under the metal plate. 如請求項1之基板處理裝置,其中前述吸附保持部保持前述基板中雷射光透過的部分以外之整個部分。 The substrate processing apparatus of claim 1, wherein the adsorption holding portion holds the entire portion other than the portion through which the laser light is transmitted through the substrate. 一種基板處理方法,其係處理包含基板與設於該基板之膜面之被處理基板中該膜面之緣部者,其特徵為具備:藉由運送部,在前述膜面位於前述基板之下側之狀態下,運送前述被處理基板之步驟;藉由一對定位部,在前述膜面位於前述基板之下側之狀態下,夾持並定位前述運送部所運送之前述被處理基板之步驟;藉由吸附保持部,在前述膜面位於前述基板之下側之狀態下,從上側吸附保持以前述一對定位部所定位之前述被處理基板之步驟;從雷射照射裝置照射雷射光之步驟;及 藉由雷射移動部,使前述雷射照射裝置於水平方向移動之步驟;且藉由一面以使雷射光從前述雷射照射裝置通過前述基板之方式進行照射,一面使前述雷射照射裝置移動,而藉由通過前述基板之雷射光處理以前述吸附保持部所保持之前述被處理基板中前述膜面之緣部;在以前述吸附保持部吸附保持前述被處理基板後,前述定位部釋放該被處理基板。 A substrate processing method for processing an edge portion of the film surface including a substrate and a substrate to be processed on a film surface of the substrate, wherein the film portion is disposed under the substrate by the transport portion a step of transporting the substrate to be processed in a side state, and a step of sandwiching and positioning the substrate to be processed carried by the transport portion in a state where the film surface is located on a lower side of the substrate by a pair of positioning portions a step of adsorbing and holding the substrate to be processed positioned by the pair of positioning portions from the upper side in a state where the film surface is located on a lower side of the substrate by the adsorption holding portion; and irradiating the laser light from the laser irradiation device Step; and a step of moving the laser irradiation device in a horizontal direction by a laser moving portion; and moving the laser irradiation device while irradiating the laser beam from the laser irradiation device through the substrate And the edge portion of the film surface in the substrate to be processed held by the adsorption holding portion by laser light irradiation on the substrate; and the positioning portion releases the substrate after the substrate is processed by the adsorption holding portion The substrate to be processed. 如請求項8之基板處理方法,其係藉由一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著特定方向移動,而處理前述被處理基板之一緣部,接著,以旋轉驅動部使前述被處理基板旋轉後,藉由一面從前述雷射照射裝置照射雷射光,一面使該雷射照射裝置沿著前述特定方向移動,而處理該被處理基板之另一緣部。 The substrate processing method according to claim 8, wherein the laser irradiation device irradiates the laser light from the laser irradiation device while moving the laser irradiation device in a specific direction to process one edge of the substrate to be processed, and then, After the substrate to be processed is rotated by the rotation driving unit, the laser beam is irradiated from the laser irradiation device, and the laser irradiation device is moved along the specific direction to process the other edge of the substrate to be processed. . 如請求項8之基板處理方法,其中前述運送部係僅抵接前述膜面中以雷射光除去之部分。 The substrate processing method according to claim 8, wherein the transport portion abuts only a portion of the film surface that is removed by laser light. 如請求項8之基板處理方法,其中在藉由通過前述基板之雷射光處理前述膜面之緣部時,前述吸附保持部保持前述基板中雷射光透過的部分以外之整個部分。 The substrate processing method according to claim 8, wherein the adsorption holding portion holds the entire portion other than the portion through which the laser light is transmitted through the substrate while the edge portion of the film surface is processed by the laser light of the substrate.
TW98138676A 2008-11-13 2009-11-13 A substrate processing apparatus and a substrate processing method TWI469840B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008291064 2008-11-13

Publications (2)

Publication Number Publication Date
TW201029785A TW201029785A (en) 2010-08-16
TWI469840B true TWI469840B (en) 2015-01-21

Family

ID=42169987

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98138676A TWI469840B (en) 2008-11-13 2009-11-13 A substrate processing apparatus and a substrate processing method

Country Status (5)

Country Link
JP (1) JP5480159B2 (en)
KR (1) KR101571585B1 (en)
CN (1) CN102197463B (en)
TW (1) TWI469840B (en)
WO (1) WO2010055855A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5843292B2 (en) * 2013-03-21 2016-01-13 株式会社日本製鋼所 Annealing semiconductor substrate manufacturing method, scanning apparatus, and laser processing apparatus
JP6632846B2 (en) 2014-09-30 2020-01-22 日東電工株式会社 Adhesive sheet

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189515A (en) * 1996-12-24 1998-07-21 Seiko Epson Corp Method and apparatus for removal of inessential object in peripheral edge of substrate
JP2003197570A (en) * 2001-12-21 2003-07-11 Dainippon Screen Mfg Co Ltd Apparatus and method for treating periphery of substrate
JP2006073909A (en) * 2004-09-06 2006-03-16 Tokyo Electron Ltd Substrate treatment device
JP2006287169A (en) * 2004-07-09 2006-10-19 Sekisui Chem Co Ltd Substrate processing apparatus and method therefor
JP2006344718A (en) * 2005-06-08 2006-12-21 Sony Corp Method of removing contamination

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1064863A (en) * 1996-08-21 1998-03-06 Nikon Corp Substrate cleaning device
JP2001345252A (en) * 2000-05-30 2001-12-14 Hyper Photon Systens Inc Laser cutter
JP4108941B2 (en) * 2000-10-31 2008-06-25 株式会社荏原製作所 Substrate gripping apparatus, processing apparatus, and gripping method
JP4554901B2 (en) * 2003-08-12 2010-09-29 株式会社ディスコ Wafer processing method
JP4546227B2 (en) 2004-11-30 2010-09-15 Necエンジニアリング株式会社 Film thickness resistance measuring device
JP4734101B2 (en) * 2005-11-30 2011-07-27 株式会社ディスコ Laser processing equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189515A (en) * 1996-12-24 1998-07-21 Seiko Epson Corp Method and apparatus for removal of inessential object in peripheral edge of substrate
JP2003197570A (en) * 2001-12-21 2003-07-11 Dainippon Screen Mfg Co Ltd Apparatus and method for treating periphery of substrate
JP2006287169A (en) * 2004-07-09 2006-10-19 Sekisui Chem Co Ltd Substrate processing apparatus and method therefor
JP2006073909A (en) * 2004-09-06 2006-03-16 Tokyo Electron Ltd Substrate treatment device
JP2006344718A (en) * 2005-06-08 2006-12-21 Sony Corp Method of removing contamination

Also Published As

Publication number Publication date
KR101571585B1 (en) 2015-11-24
WO2010055855A1 (en) 2010-05-20
CN102197463A (en) 2011-09-21
JP5480159B2 (en) 2014-04-23
KR20110095318A (en) 2011-08-24
JPWO2010055855A1 (en) 2012-04-12
CN102197463B (en) 2015-09-30
TW201029785A (en) 2010-08-16

Similar Documents

Publication Publication Date Title
KR102222005B1 (en) Exposure apparatus and exposure method using the same
JP2012094770A (en) Inspection device and substrate positioning method
JP2006140380A (en) Substrate treatment device
TW201142410A (en) Liquid crystal substrate bonding system
TWI469840B (en) A substrate processing apparatus and a substrate processing method
JP2008210965A (en) Substrate holder and laser annealing apparatus
JP2007316561A (en) Exposure device and exposure method
JP2010168653A (en) Substrate inverting apparatus, vacuum film deposition system and substrate inverting method
TWI705518B (en) A substrate processing apparatus, and a substrate processing method
JP2014225514A (en) Peeling device, peeling system, peeling method, program, and computer storage medium
WO2018003578A1 (en) Alignment device
JP6525845B2 (en) Laser processing equipment
JP2018010273A (en) Alignment device
JP5799304B2 (en) Exposure unit and exposure method using the same
JP5405173B2 (en) Positioning device and positioning method
KR20210005371A (en) Substrate align unit and substrate processing apparatus
JP7085623B2 (en) Board processing method
US20200180071A1 (en) Laser irradiation apparatus
WO2020226179A1 (en) Film processing device
JP2006073946A (en) Glass substrate feeder
JP2012237817A (en) Exposure device and exposure method
JP2013233472A (en) Thin film formation method and thin film formation apparatus
KR20180035660A (en) Substrate arrangement apparatus and substrate arrangement method
JP2007324169A (en) Carrying arm, substrate carrier, and substrate inspection apparatus
JP4256651B2 (en) Scribing equipment

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees