WO2010050188A1 - 半導体集積回路の動作解析方法、動作解析装置、動作解析プログラム及び動作解析システム - Google Patents
半導体集積回路の動作解析方法、動作解析装置、動作解析プログラム及び動作解析システム Download PDFInfo
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- WO2010050188A1 WO2010050188A1 PCT/JP2009/005672 JP2009005672W WO2010050188A1 WO 2010050188 A1 WO2010050188 A1 WO 2010050188A1 JP 2009005672 W JP2009005672 W JP 2009005672W WO 2010050188 A1 WO2010050188 A1 WO 2010050188A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
- G01R31/2836—Fault-finding or characterising
- G01R31/2846—Fault-finding or characterising using hard- or software simulation or using knowledge-based systems, e.g. expert systems, artificial intelligence or interactive algorithms
- G01R31/2848—Fault-finding or characterising using hard- or software simulation or using knowledge-based systems, e.g. expert systems, artificial intelligence or interactive algorithms using simulation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
Definitions
- the present invention relates to a semiconductor integrated circuit operation analysis method, an operation analysis apparatus, an operation analysis program, and an operation analysis system.
- the first method is a method of analyzing the cause of malfunction by applying noise to the actual device after manufacture by some method and observing the operation of the device from the outside.
- the second method is to model the inside of a target semiconductor integrated circuit with a so-called “LRC network” in which inductance L, resistance R, and capacitance C are expressed based on design information used for manufacturing.
- LRC network inductance L, resistance R, and capacitance C are expressed based on design information used for manufacturing.
- a noise source is inserted into the LRC network, and analysis is performed by simulation.
- Patent Document 1 discloses a noise immunity evaluation device as an “analysis technique based on actual measurement” relating to operation analysis of a semiconductor integrated circuit in consideration of the influence of external noise.
- Patent Document 2 discloses an electromagnetic wave interference analyzing apparatus.
- the noise immunity evaluation apparatus disclosed in Patent Document 1 applies a rectangular wave as noise to an arbitrary location on a board and measures the operation of a semiconductor integrated circuit.
- the electromagnetic wave disturbance analyzing apparatus disclosed in Patent Document 2 models a power supply wiring inside a semiconductor integrated circuit and a power supply wiring outside the semiconductor integrated circuit with an equivalent circuit, and supplies a noise waveform to the equivalent circuit for simulation. Thus, the influence of noise on the semiconductor integrated circuit is analyzed.
- Patent Documents 1 and 2 have room for improvement in the following points.
- Patent Document 1 has an advantage that a malfunction that can actually occur can be accurately analyzed by actually operating the semiconductor integrated circuit.
- the inside of the semiconductor integrated circuit cannot be freely observed, the inside of the semiconductor integrated circuit has to be handled as a black box, and it has been difficult to analyze the operation inside the semiconductor integrated circuit in detail. That is, there is a problem that it is difficult to specify in detail which part of the semiconductor integrated circuit has the cause of malfunction.
- Patent Document 1 is a limit. was there.
- Patent Document 2 has an advantage that the internal operation of the semiconductor integrated circuit can be analyzed in detail.
- the analysis results are not necessarily consistent with the operation of the semiconductor integrated circuit. That is, there is a problem that even if the cause of the malfunction can be identified by the simulation, it cannot be guaranteed that the cause is actually the cause of the malfunction in the actual operation of the semiconductor integrated circuit.
- Patent Document 2 the internal and external power supply wiring of the semiconductor integrated circuit is modeled by replacing it with an equivalent circuit, and the operation analysis is performed by supplying a noise waveform on the equivalent circuit and performing a simulation.
- the semiconductor integrated circuit and its outer package and board are accurately modeled, and the noise shape, noise application location, and noise application timing are determined. It is necessary to apply an appropriate noise pattern that can reliably cause malfunction. At the same time, it is necessary to be able to accurately perform an operation simulation using an appropriate noise pattern that can reliably cause the semiconductor integrated circuit to malfunction.
- the accuracy of the noise pattern and the simulation model requires high consistency between the simulation and the actual operation of the semiconductor integrated circuit, and it is difficult to accurately analyze the operation of the semiconductor integrated circuit considering the influence of external noise. Met.
- the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor integrated circuit operation analysis method and operation capable of performing accurate operation analysis of a semiconductor integrated circuit in consideration of the influence of external noise.
- the object is to provide an analysis device, an operation analysis program, and an operation analysis system.
- the semiconductor integrated circuit operation analysis method of the present invention is an operation analysis method for analyzing the operation of a semiconductor integrated circuit, A semiconductor characteristic extracting step of extracting inductance, resistance and capacitance of each of the semiconductor substrate, the package and the semiconductor integrated circuit from the semiconductor integrated circuit mounted on the semiconductor substrate via a package; An individual network generation step of generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, An integrated network generation step of integrating each generated individual network to generate an integrated network; An operation simulation execution step of inserting a verification noise pattern into an arbitrary location of the generated integrated network and executing an operation simulation of the semiconductor integrated circuit.
- the semiconductor integrated circuit operation analysis apparatus of the present invention includes: Semiconductor characteristic extraction means for extracting inductance, resistance and capacitance of each of the semiconductor substrate, the package and the semiconductor integrated circuit from a semiconductor integrated circuit mounted on the semiconductor substrate via a package; Individual network generation means for generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, Integrated network generating means for integrating each generated individual network and generating an integrated network; Operation simulation executing means for inserting a noise pattern for verification at an arbitrary position of the generated integrated network and executing an operation simulation of the semiconductor integrated circuit.
- An operation analysis program for a semiconductor integrated circuit includes: A semiconductor characteristic extraction procedure for extracting inductance, resistance and capacitance of each of the semiconductor substrate, the package and the semiconductor integrated circuit from a semiconductor integrated circuit mounted on the semiconductor substrate via a package; An individual network generation procedure for generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, An integrated network generation procedure for integrating each generated individual network and generating an integrated network; An operation simulation execution procedure for inserting a noise pattern for verification at an arbitrary location of the generated integrated network and executing an operation simulation of the semiconductor integrated circuit; Is a program for causing a computer to execute.
- An operation analysis system for a semiconductor integrated circuit includes: Semiconductor characteristic extraction means for extracting inductance, resistance and capacitance of each of the semiconductor substrate, the package and the semiconductor integrated circuit from a semiconductor integrated circuit mounted on the semiconductor substrate via a package; Individual network generation means for generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, Integrated network generating means for integrating each generated individual network and generating an integrated network; An operation simulation execution means for inserting a noise pattern for verification at an arbitrary location of the generated integrated network and executing an operation simulation of the semiconductor integrated circuit; From the execution result of the executed operation simulation, noise analysis means for analyzing the operation by the inserted noise pattern for verification, When the analyzed operation is caused by the verification noise pattern, external noise application means for applying the verification noise pattern as the first external noise from the outside of the semiconductor integrated circuit; Device analysis means for performing device analysis by actual operation of the semiconductor integrated circuit to which the first external noise is applied.
- a plurality of components are formed as a single member, and a single component is formed of a plurality of members. It may be that a certain component is a part of another component, a part of a certain component overlaps with a part of another component, or the like.
- the plurality of procedures of the method and computer program of the present invention are not limited to being executed at different timings. For this reason, another procedure may occur during the execution of a certain procedure, or some or all of the execution timing of a certain procedure and the execution timing of another procedure may overlap.
- a semiconductor integrated circuit operation analysis method capable of performing an accurate operation analysis of a semiconductor integrated circuit in consideration of the influence of external noise.
- FIG. 5 is a flowchart showing the operation of the semiconductor integrated circuit operation analysis apparatus according to the present embodiment. It is a block diagram which shows an example of a structure of the computer which implement
- FIG. 1 is a block diagram showing a configuration of a semiconductor integrated circuit operation analysis apparatus 100 according to the present embodiment.
- the semiconductor integrated circuit operation analysis apparatus 100 includes a simulation analysis unit 140 that analyzes the operation of the semiconductor integrated circuit.
- the simulation analysis unit 140 extracts a semiconductor characteristic extraction unit that extracts an inductance L, a resistance R, and a capacitance C of each of the board, the package, and the semiconductor integrated circuit from the semiconductor integrated circuit mounted on the board (semiconductor substrate) via the package.
- an individual network generation unit 111 that generates individual networks of the board, package, and semiconductor integrated circuit from the extracted inductance L, resistance R, and capacitance C, and the generated individual networks
- An integrated network generation unit 112 that generates an integrated network
- an operation simulation execution unit 113 that inserts a verification noise pattern at an arbitrary position of the generated integrated network and executes an operation simulation of the semiconductor integrated circuit are provided. .
- the simulation analysis unit 140 includes a noise analysis unit 114, a simulation operation information storage unit 115, and an external noise application unit 125.
- the motion analysis apparatus 100 includes an external noise pattern generation unit 116, a noise pattern management unit 117, and an actual operation device analysis unit 130.
- the actual operation device analysis unit 130 includes an external noise application unit 118, a device analysis unit 119, and a device operation information storage unit 120.
- the semiconductor characteristic extraction unit 110 downloads package information, board information, and semiconductor integrated circuit information from a network (not shown) by a user using a user interface unit (not shown) or as a data file, or a storage device or various types of information.
- An inductance L, a resistance R, and a capacitance C are extracted for each of the package, the board, and the semiconductor integrated circuit, which are input by reading from the recording medium.
- the semiconductor characteristic extraction unit 110 transmits the extracted inductance L, resistance R, and capacitance C to the individual network generation unit 111.
- these values may be extracted in any way, and the extraction unit Is not limited.
- the individual network generation unit 111 When the individual network generation unit 111 receives the extracted inductance L, resistance R, and capacitance C, the individual network generation unit 111 has an inductance L, resistance R, and capacitance C individual network for each of the package, the board, and the semiconductor integrated circuit. Is generated. The individual network generation unit 111 transmits the generated individual networks to the integrated network generation unit 112.
- the integrated network generation unit 112 When the integrated network generation unit 112 receives each individual network generated from the individual network generation unit 111, the integrated network generation unit 112 integrates the individual networks of the package, the board, and the semiconductor integrated circuit to generate a semiconductor integrated LRC network (integrated network).
- a semiconductor integrated LRC network integrated network
- FIG. 2 is a schematic diagram showing the generated semiconductor integrated LRC network.
- the semiconductor integrated LRC network shown in FIG. 2 is formed by an individual network by the board 201, an individual network by the package 202, and an individual network by the semiconductor integrated circuit 203.
- the board 201 has a power source 204, a noise source 205, and a ground line 207.
- the package 202 has a power supply line 206 and a ground line 207.
- the semiconductor integrated circuit 203 has a power supply line 206, a ground line 207, and a logic circuit 208. Note that the power supply line 206 and the ground line 207 are connected to each other in the board 201, the package 202, and the semiconductor integrated circuit 203.
- the semiconductor integrated circuit 203 has a logic circuit 208 as an example. Further, it is sufficient that a network can be formed inside the semiconductor integrated circuit 203, and it may be at the transistor level, or at the gate array or standard cell level.
- the external noise pattern generation unit 116 receives external noise pattern information from the outside by a user using a user interface unit (not shown), and applies an applied noise pattern (also referred to as an external noise pattern) based on the external noise pattern information. Generate.
- the external noise pattern information sets the noise pattern insertion timing, the noise pattern shape, and the noise pattern insertion position, accepts the settings as parameters, and applies the applied noise pattern based on the accepted parameters. Is generated.
- FIG. 3 is a diagram showing an applied noise pattern 301 modeled with a trapezoidal wave.
- the applied noise pattern 301 is formed of timing elements a, b, c, and d that form noise.
- FIG. 4 shows the timing at which the applied noise pattern 301 is applied.
- the noise application timing 402 shown in FIG. 4 can be set in accordance with an arbitrary signal 401 with the rising or falling time of the signal 401 as a starting point.
- the timing for applying noise (noise application timing 402) is set before the rise time of the signal 401.
- arbitrary coordinates of the board 201 can be set as a location where noise is applied.
- the noise pattern management unit 117 manages the applied noise pattern generated by the external noise pattern generation unit 116.
- the external noise application unit 118 acquires the applied noise pattern generated by the external noise pattern generation unit 116 from the noise pattern management unit 117 and applies it to the actual device (for example, the semiconductor integrated circuit 203).
- the generated applied noise pattern is already existing. Can be used by technology.
- the device analysis unit 119 performs actual evaluation by actually measuring the operation when the applied noise pattern is applied, and stores the device operation information as the evaluation result in the device operation information storage unit 120.
- the device operation information storage unit 120 stores device operation information that is an evaluation result of an actual device.
- the external noise application unit 125 inserts the applied noise pattern managed by the noise pattern management unit 117 into the semiconductor integrated LRC network generated by the integrated network generation unit 112.
- the operation simulation execution unit 113 executes the operation simulation in a state where the applied noise pattern is inserted as a noise source in the semiconductor integrated LRC network. Note that the inserted noise source is converted from the application location set in the external noise pattern generation unit 116 to a position on the semiconductor integrated LRC network and inserted.
- a noise source 205 is inserted in the power supply line 206 of the board 201.
- FIG. 5 is a diagram showing that the noise source 501 is inserted into the ground line 207 of the semiconductor integrated LRC network.
- the noise analysis unit 114 analyzes the simulation result of the semiconductor integrated LRC network. Since the operation simulation has already been executed with the noise source inserted, the noise analysis unit 114 can perform detailed analysis inside the semiconductor integrated circuit 203.
- FIG. 6 is a diagram showing a detailed cause analysis of the malfunction of the semiconductor integrated circuit 203.
- the cause of the malfunction is detailed in the signal wiring level (see the signal wiring 603) related to the hard macrocell 602 in the standard cell 601 as shown in FIG. Can be analyzed.
- the noise analysis unit 114 stores the analyzed analysis result in the simulation operation information storage unit 115.
- the simulation operation information storage unit 115 stores the analysis result analyzed by the noise analysis unit 114.
- the external noise in the present embodiment refers to noise that flows through the power supply, the ground, the signal line, etc. connected to the semiconductor integrated circuit and flows into the semiconductor integrated circuit. Accordingly, it is possible to analyze the cause of the malfunction in the semiconductor integrated circuit due to the flow of such noise.
- the semiconductor integrated circuit in this embodiment is used as a general term for devices, chips, LSIs (Large Scale Integrated Circuits), etc., and includes those generally included as semiconductors.
- the motion analysis device 100 can be realized as a predetermined function realized in the motion analysis device 100 by a computer program, an arbitrary combination thereof, or the like.
- the various components of the present embodiment do not have to be individually independent, and a plurality of components are formed as one block, and one component is formed of a plurality of blocks. It is also possible that a certain component is a part of another component, a part of a certain component overlaps a part of another component, and the like.
- the motion analysis apparatus 100 can read a computer program and execute corresponding information processing, as shown in FIG. 9, a CPU (Central Processing Unit) 902 and a memory 904 of an arbitrary computer 900 as shown in FIG. , A program for realizing the components of the motion analysis apparatus 100 of the present embodiment loaded in the memory 904, a storage unit 906 such as a hard disk for storing the program, and a network 920 connection interface (I / F: Interface) 908.
- I / F: Interface connection interface
- it is realized by any combination of hardware constructed by a general-purpose device, a dedicated logic circuit constructed to execute predetermined information processing, and software.
- the computer 900 is connected to an input device 910 such as a keyboard and a mouse, an output device 912 such as a display and a printer, and an input / output (I / O) unit (not shown) between these input / output devices. May be.
- a CPU 902 is connected to each element of the computer 900 via a bus 909, and controls the entire computer 900 together with each element. It will be understood by those skilled in the art that there are various modifications to the implementation method and apparatus. In the embodiment of the present invention, each drawing shows a functional unit block, not a hardware unit configuration.
- causing the CPU 902 of the computer 900 that implements the motion analysis apparatus 100 to execute various operations corresponding to the computer program in the present embodiment causes the CPU 902 of the computer 900 that implements the motion analysis apparatus 100 to execute various blocks. It also means that the operation is controlled.
- the computer program of the present embodiment may be recorded on a recording medium readable by the computer 900.
- the recording medium is not particularly limited, and various forms can be considered. Further, the program may be loaded from a recording medium into the memory 904 of the computer 900, or may be downloaded to the computer 900 via the network 920 and loaded into the memory 904.
- registering, storing, storing, holding, or saving various types of information and data in the computer 900 that implements the motion analysis apparatus 100 means that the storage unit 906 and the memory 904 fixed to the computer 900 that implements the motion analysis apparatus 100 are used.
- the CPU 902 stores various types of information and data in an information storage device such as a CD-R (Compact Disk Recordable) or DVD (Digital Versatile Disk) loaded in the computer 900 that implements the motion analysis apparatus 100.
- the CPU stores various information and data in the information storage medium using a disk drive, or downloads various information and data by communicating with other devices (not shown) on the network 920 via the interface 908. , Storing in the information storage device or the information storage medium , Etc.
- FIG. 7 is a flowchart showing processing by the motion analysis apparatus 100.
- a description will be given with reference to FIGS. 1, 7, and 9.
- the computer program of the present embodiment is an operation analysis program for a semiconductor integrated circuit. From a semiconductor integrated circuit mounted on a semiconductor substrate via a package, the inductance, resistance, and resistance of each of the semiconductor substrate, the package, and the semiconductor integrated circuit Semiconductor characteristic extraction procedure for extracting capacitance, individual network generation procedure for generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, and each generated An integrated network generation procedure for integrating individual networks and generating an integrated network (step S3 in FIG. 7), and a noise pattern for verification is inserted at an arbitrary location in the generated integrated network (step S5 in FIG. 7) Perform integrated circuit operation simulation The simulation execution procedure is described so as to execute (step S7 in FIG. 7), to the computer 900 (FIG. 9) that.
- the user is connected to the motion analysis apparatus 100 by an input device 910 (FIG. 9) such as a keyboard and a mouse of a computer 900 (FIG. 9) and an output device 912 (FIG. 9) such as a display.
- External noise pattern information input using the interface unit is received.
- the external noise pattern generation unit 116 acquires the external noise pattern information
- the external noise pattern generation unit 116 generates, for example, one applied noise pattern for performing the operation analysis (step S1 in FIG. 7).
- the external noise pattern generation unit 116 transmits the applied noise pattern to the noise pattern management unit 117.
- the noise pattern management unit 117 manages the applied noise pattern.
- the operation analysis apparatus 100 acquires information input by a user using a user interface unit (not shown) for package information, board information, and semiconductor integrated circuit information.
- the semiconductor characteristic extraction unit 110 extracts the inductance L, resistance R, and capacitance C of the board 201, the package 202, and the semiconductor integrated circuit 203, respectively.
- the semiconductor characteristic extraction unit 110 transmits the extracted inductance L, resistance R, and capacitance C to the individual network generation unit 111.
- the individual network generation unit 111 When the individual network generation unit 111 receives the inductance L, resistance R, and capacitance C of the board 201, the package 202, and the semiconductor integrated circuit 203, the individual network generation unit 111 receives the inductance L, A separate network of resistors R and capacitances C is generated. The individual network generation unit 111 transmits the generated individual network of the board 201, the package 202, and the semiconductor integrated circuit 203 to the integrated network generation unit 112.
- the integrated network generation unit 112 When the integrated network generation unit 112 receives the individual network of the board 201, the package 202, and the semiconductor integrated circuit 203, the integrated network generation unit 112 integrates the individual network of the board 201, the package 202, and the semiconductor integrated circuit 203 to generate a semiconductor integrated LRC network ( Step S3 in FIG. When the integrated network generation unit 112 generates the semiconductor integrated LRC network, the integrated network generation unit 112 transmits the semiconductor integrated LRC network to the external noise application unit 125.
- the noise pattern management unit 117 applies the selected applied noise pattern to the external noise application.
- the external noise application unit 125 inserts the applied noise pattern into the semiconductor integrated LRC network received from the integrated network generation unit 112 as a noise source (step S5 in FIG. 7).
- the external noise application unit 125 transmits the semiconductor integrated LRC network in which the noise source is inserted to the operation simulation execution unit 113.
- the operation simulation executing unit 113 executes an operation simulation using the semiconductor integrated LRC network (step S7 in FIG. 7).
- the noise analysis unit 114 analyzes the execution result of the operation simulation of the semiconductor integrated LRC network in which the noise source is inserted. Specifically, as shown in FIG. 6, it is analyzed whether or not the malfunction cause location 604 is detected in the semiconductor integrated circuit 203 (step S9 in FIG. 7). Further, the noise analysis unit 114 stores the analysis result in the simulation operation information storage unit 115.
- the noise analysis unit 114 determines that a malfunction has occurred (YES in step S11 in FIG. 7), and notifies the external noise application unit 118 that a malfunction has occurred.
- the external noise application unit 118 receives a notification that a malfunction has occurred, the external noise application unit 118 applies the applied noise pattern in which the malfunction has occurred to the semiconductor integrated circuit 203 (actual device) to the external noise (corresponding to the first external noise). (Step S13 in FIG. 7).
- the noise analysis unit 114 notifies the external noise application unit 118 that a malfunction has occurred, and the external noise is applied to the semiconductor integrated circuit 203 because the consistency between the simulation result and the semiconductor integrated circuit 203 is confirmed. It is to do.
- the device analysis unit 119 performs actual evaluation by actually measuring the operation of the semiconductor integrated circuit 203 to which the external noise is applied (step S15 in FIG. 7). Then, the device analysis unit 119 stores device operation information that is an evaluation result in the device operation information storage unit 120.
- step S11 determines that no malfunction has occurred (NO in step S11 in FIG. 7), and the process returns to step S1 to generate a new external noise pattern. The processes from step S1 to S9 are repeated.
- the external noise pattern is not necessarily generated every time, and may be sequentially replaced each time the noise pattern management unit 117 manages a plurality of external noise patterns in advance and executes a simulation.
- the semiconductor integrated circuit operation analysis apparatus 100 determines whether each of the board 201, the package 202, and the semiconductor integrated circuit 203 from the input board information, package information, and semiconductor integrated circuit information. An individual network is generated, and each individual network is integrated to generate a semiconductor integrated LRC network.
- the operation analysis apparatus 100 can execute simulation by inserting an arbitrary noise source into the generated semiconductor integrated LRC network, the operation analysis apparatus 100 passes through the power supply line 206 and the ground line 207 of the board 201 and the package 202. The influence of noise entering the semiconductor integrated circuit 203 on the operation can be analyzed accurately.
- the operation analysis apparatus 100 can perform an accurate operation analysis of the semiconductor integrated circuit in consideration of the influence of external noise.
- the operation analysis apparatus 100 for a semiconductor integrated circuit generates a semiconductor integrated LRC network from package information, board information, and semiconductor integrated circuit information as described in the process of step S3 in FIG.
- an operation simulation is executed.
- the processes of steps S3 to S9 described in FIG. 7 are executed by replacing the processes of steps S13 and S15 with the processing procedure.
- an applied noise pattern (corresponding to the second external noise) is first applied to the semiconductor integrated circuit 203 (actual device) (step S13 in FIG. 8).
- step S15 in FIG. 8 after actually measuring the operation of the semiconductor integrated circuit 203 and evaluating it with an actual machine (step S15 in FIG. 8), when a malfunction occurs due to the applied applied noise pattern (YES in step S20 in FIG. 8). ), A semiconductor integrated LRC network is generated, a noise source in which a malfunction occurs (that is, the second external noise) is inserted into the semiconductor integrated LRC network, and an operation simulation is executed.
- FIG. 8 is a flowchart showing the operation of the motion analysis apparatus 100 according to the second embodiment.
- the same processing steps as those in the flowchart shown in FIG. In other words, in this case, the basic processing contents are not changed only by changing the processing procedure.
- the only change in the processing content is that the device analysis unit 119 determines whether or not a malfunction has occurred in step S20.
- the semiconductor integrated circuit operation analysis apparatus 100 performs accurate operation analysis of the semiconductor integrated circuit in consideration of the influence of external noise, as in the case of the first embodiment. It can be carried out.
- the applied noise pattern to be applied can be shared in operation simulation and device analysis by actual measurement, it can be analyzed by device analysis in actual measurement using the applied noise pattern in which malfunction occurred in the operation simulation, An operation simulation can be executed using an applied noise pattern in which a malfunction occurs in an actual device analysis.
- a malfunction analysis method for analyzing the operation of a semiconductor integrated circuit A semiconductor characteristic extracting step of extracting inductance, resistance and capacitance of each of the semiconductor substrate, the package and the semiconductor integrated circuit from the semiconductor integrated circuit mounted on the semiconductor substrate via a package; An individual network generation step of generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, An integrated network generation step of integrating each generated individual network to generate an integrated network; A malfunction simulation execution step of inserting a noise pattern for verification at an arbitrary location of the generated integrated network and executing a malfunction simulation of the semiconductor integrated circuit; A malfunction analysis method comprising: (2) The noise pattern for verification is The malfunction as described in (1) above, which is generated by setting the timing for inserting the verification noise pattern, the shape of the verification noise pattern, and the insertion position of the verification noise pattern as parameters.
- a noise analysis step of analyzing a malfunction by the inserted noise pattern for verification When the analyzed malfunction is caused by the verification noise pattern, an external noise application step of applying the verification noise pattern from the outside of the semiconductor integrated circuit as a first external noise; A device analysis step for performing device analysis by actual operation using the applied first external noise;
- the malfunction simulation execution step includes: When a malfunction is detected as a result of the device analysis, the second external noise is inserted as an arbitrary noise pattern in the integrated network as the verification noise pattern, and a malfunction simulation of the semiconductor integrated circuit is executed.
- a malfunction analysis apparatus having a simulation analysis unit for analyzing the operation of a semiconductor integrated circuit, The simulation analysis unit Semiconductor characteristic extraction means for extracting the inductance, resistance and capacitance of each of the semiconductor substrate, the package and the semiconductor integrated circuit from the semiconductor integrated circuit mounted on the semiconductor substrate via a package; Individual network generation means for generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, Integrated network generating means for integrating each generated individual network and generating an integrated network; A malfunction simulation execution means for inserting a noise pattern for verification at an arbitrary location of the generated integrated network and executing a malfunction simulation of the semiconductor integrated circuit; A malfunction analysis apparatus comprising: (6) The noise pattern for verification is The malfunction as described in (5) above, which is generated by setting the timing for inserting the verification noise pattern, the shape of the verification noise pattern, and the insertion position of the verification noise pattern as parameters.
- the malfunction analysis apparatus having an actual operation device analysis unit that performs device analysis of the operation of the semiconductor integrated circuit by actual operation;
- the simulation analysis unit From the execution result of the executed malfunction simulation, comprising noise analysis means for analyzing a malfunction by the inserted noise pattern for verification, The actual operation device analysis unit
- external noise application means for applying the verification noise pattern as the first external noise from the outside of the semiconductor integrated circuit
- Device analysis means for performing device analysis by actual operation by the applied first external noise
- the malfunction analysis apparatus according to the above (5) or (6), comprising: (8) having an actual operation device analysis unit for performing device analysis of the operation of the semiconductor integrated circuit by actual operation;
- the actual operation device analysis unit Second external noise applying means for applying a second external noise from the outside of the semiconductor integrated circuit;
- Second device analysis means for performing device analysis by actual operation using the applied second external noise,
- the malfunction simulation execution means includes: When a malfunction is detected as a result of the device analysis, the second external noise is inserted as an arbitrary noise pattern in the integrated network as the verification noise pattern,
- a malfunction analysis program for causing a computer to execute a simulation analysis procedure for analyzing the operation of a semiconductor integrated circuit includes: A semiconductor characteristic extraction procedure for extracting inductance, resistance, and capacitance of each of the semiconductor substrate, the package, and the semiconductor integrated circuit from the semiconductor integrated circuit mounted on the semiconductor substrate via a package; An individual network generation procedure for generating individual networks of the semiconductor substrate, the package, and the semiconductor integrated circuit from the extracted inductance, resistance, and capacitance, An integrated network generation procedure for integrating each generated individual network and generating an integrated network; A malfunction simulation execution procedure for inserting a noise pattern for verification at an arbitrary location of the generated integrated network and executing a malfunction simulation of the semiconductor integrated circuit; A malfunction analysis program characterized by comprising: (10) A malfunction analysis system including a simulation analysis unit that analyzes an operation of a semiconductor integrated circuit, and an actual operation device analysis unit that performs device analysis of the operation of the semiconductor integrated circuit by actual
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Abstract
Description
半導体基板にパッケージを介して実装された前記半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出ステップと、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成ステップと、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成ステップと、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行ステップと、を含む。
半導体基板にパッケージを介して実装された半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手段と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手段と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手段と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行手段と、を備える。
半導体基板にパッケージを介して実装された半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手順と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手順と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手順と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行手順と、
をコンピュータに実行させるためのプログラムである。
半導体基板にパッケージを介して実装された半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手段と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手段と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手段と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行手段と、
実行された前記動作シミュレーションの実行結果から、挿入された前記検証用ノイズパターンにより動作を解析するノイズ解析手段と、
解析された前記動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加する外来ノイズ印加手段と、
前記第1の外来ノイズが印加された前記半導体集積回路の実動作によるデバイス解析を行うデバイス解析手段と、を備える。
以下、本発明の実施形態について、図面に基づき説明する。図1は、本実施形態に係る半導体集積回路の動作解析装置100の構成を示すブロック図である。
第1の実施の形態において、半導体集積回路の動作解析装置100は、図7のステップS3の処理において説明したように、パッケージ情報、ボード情報及び半導体集積回路情報から、半導体統合LRCネットワークを生成し、ステップS7の処理において、動作シミュレーションを実行していた。
(1) 半導体集積回路の動作を解析する誤動作解析方法であって、
半導体基板にパッケージを介して実装された前記半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出ステップと、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成ステップと、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成ステップと、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の誤動作シミュレーションを実行する誤動作シミュレーション実行ステップと、
を含むことを特徴とする誤動作解析方法。
(2) 前記検証用ノイズパターンは、
当該検証用ノイズパターンを挿入するタイミング、当該検証用ノイズパターンの形状及び当該検証用ノイズパターンの挿入位置をパラメータとして設定されることにより生成される
ことを特徴とする上記(1)に記載の誤動作解析方法。
(3) 実行された前記誤動作シミュレーションの実行結果から、挿入された前記検証用ノイズパターンにより誤動作を解析するノイズ解析ステップと、
解析された前記誤動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加する外来ノイズ印加ステップと、
印加された前記第1の外来ノイズによって実動作によるデバイス解析を行うデバイス解析ステップと、
を含むことを特徴とする上記(1)又は(2)に記載の誤動作解析方法。
(4) 前記半導体集積回路の外部から第2の外来ノイズを印加する第2の外来ノイズ印加ステップと、
印加された前記第2の外来ノイズによって実動作によるデバイス解析を行う第2のデバイス解析ステップと、を含み、
前記誤動作シミュレーション実行ステップは、
前記デバイス解析の結果によって誤動作が検出されたときは、前記第2の外来ノイズを前記検証用ノイズパターンとして前記統合ネットワークの任意の箇所に挿入し、前記半導体集積回路の誤動作シミュレーションを実行する
ことを特徴とする上記(1)乃至(3)の何れか1つに記載の誤動作解析方法。
(5) 半導体集積回路の動作を解析するシミュレーション解析部を有する誤動作解析装置であって、
前記シミュレーション解析部は、
半導体基板にパッケージを介して実装された前記半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手段と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手段と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手段と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の誤動作シミュレーションを実行する誤動作シミュレーション実行手段と、
を備えることを特徴とする誤動作解析装置。
(6) 前記検証用ノイズパターンは、
当該検証用ノイズパターンを挿入するタイミング、当該検証用ノイズパターンの形状及び当該検証用ノイズパターンの挿入位置をパラメータとして設定されることにより生成される
ことを特徴とする上記(5)に記載の誤動作解析装置。
(7) 前記半導体集積回路の動作を実動作によってデバイス解析を行う実動作デバイス解析部を有し、
前記シミュレーション解析部は、
実行された前記誤動作シミュレーションの実行結果から、挿入された前記検証用ノイズパターンにより誤動作を解析するノイズ解析手段を備え、
前記実動作デバイス解析部は、
解析された前記誤動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加する外来ノイズ印加手段と、
印加された前記第1の外来ノイズによって実動作によるデバイス解析を行うデバイス解析手段と、
を備えることを特徴とする上記(5)又は(6)に記載の誤動作解析装置。
(8) 前記半導体集積回路の動作を実動作によってデバイス解析を行う実動作デバイス解析部を有し、
前記実動作デバイス解析部は、
前記半導体集積回路の外部から第2の外来ノイズを印加する第2の外来ノイズ印加手段と、
印加された前記第2の外来ノイズによって実動作によるデバイス解析を行う第2のデバイス解析手段と、を備え、
前記誤動作シミュレーション実行手段は、
前記デバイス解析の結果によって誤動作が検出されたときは、前記第2の外来ノイズを前記検証用ノイズパターンとして前記統合ネットワークの任意の箇所に挿入し、前記半導体集積回路の誤動作シミュレーションを実行する
ことを特徴とする上記(5)5乃至(7)の何れか1つに記載の誤動作解析装置。
(9) 半導体集積回路の動作を解析するシミュレーション解析手順をコンピュータに実行させる誤動作解析プログラムであって、
前記シミュレーション解析手順は、
半導体基板にパッケージを介して実装された前記半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手順と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手順と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手順と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の誤動作シミュレーションを実行する誤動作シミュレーション実行手順と、
を有することを特徴とする誤動作解析プログラム。
(10) 半導体集積回路の動作を解析するシミュレーション解析部と、前記半導体集積回路の動作を実動作によってデバイス解析を行う実動作デバイス解析部とを有する誤動作解析システムであって、
前記シミュレーション解析部は、
半導体基板にパッケージを介して実装された前記半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手段と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手段と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手段と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の誤動作シミュレーションを実行する誤動作シミュレーション実行手段と、
実行された前記誤動作シミュレーションの実行結果から、挿入された前記検証用ノイズパターンにより誤動作を解析するノイズ解析手段と、を備え、
前記実動作デバイス解析部は、
解析された前記誤動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加する外来ノイズ印加手段と、
印加された前記第1の外来ノイズによって実動作によるデバイス解析を行うデバイス解析手段と、
を備えることを特徴とする誤動作解析システム。
Claims (10)
- 半導体集積回路の動作を解析する動作解析方法であって、
半導体基板にパッケージを介して実装された前記半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出し、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成し、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成し、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する半導体集積回路の動作解析方法。 - 請求項1に記載の半導体集積回路の動作解析方法において、
前記検証用ノイズパターンを挿入するタイミング、当該検証用ノイズパターンの形状及び当該検証用ノイズパターンの挿入位置をパラメータとして受け付け、
受け付けた前記パラメータにより、前記検証用ノイズパターンを生成して挿入する半導体集積回路の動作解析方法。 - 請求項1または2に記載の半導体集積回路の動作解析方法において、
実行された前記動作シミュレーションの実行結果から前記半導体集積回路の動作を解析し、挿入された前記検証用ノイズパターンにより発生する誤動作を検出し、
検出された前記誤動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加し、
前記第1の外来ノイズが印加された前記半導体集積回路の実動作によるデバイス解析を行う半導体集積回路の動作解析方法。 - 請求項1乃至3いずれかに記載の半導体集積回路の動作解析方法において、
前記半導体集積回路の外部から第2の外来ノイズを印加し、
前記第2の外来ノイズが印加された前記半導体集積回路の実動作によるデバイス解析を行い、
前記動作シミュレーションを実行する際に、
前記デバイス解析の解析結果に基づいて、前記半導体集積回路の誤動作が検出されたときは、前記第2の外来ノイズを前記検証用ノイズパターンとして前記統合ネットワークの任意の箇所に挿入し、前記半導体集積回路の動作シミュレーションを実行する半導体集積回路の動作解析方法。 - 半導体基板にパッケージを介して実装された半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手段と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手段と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手段と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行手段と、
を備える半導体集積回路の動作解析装置。 - 請求項5に記載の半導体集積回路の動作解析装置において、
前記動作シミュレーション実行手段は、
当該検証用ノイズパターンを挿入するタイミング、当該検証用ノイズパターンの形状及び当該検証用ノイズパターンの挿入位置をパラメータとして受け付け、
受け付けた前記パラメータにより前記検証用ノイズパターンを生成して挿入する半導体集積回路の動作解析装置。 - 請求項5または6に記載の半導体集積回路の動作解析装置において、
実行された前記動作シミュレーションの実行結果から前記半導体集積回路の動作を解析し、挿入された前記検証用ノイズパターンにより発生する誤動作を検出するノイズ解析手段と、
検出された前記誤動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加する外来ノイズ印加手段と、
前記第1の外来ノイズが印加された前記半導体集積回路の実動作によるデバイス解析を行うデバイス解析手段と、
を備える半導体集積回路の動作解析装置。 - 請求項5乃至7いずれかに記載の半導体集積回路の動作解析装置において、
前記半導体集積回路の外部から第2の外来ノイズを印加する第2の外来ノイズ印加手段と、
前記第2の外来ノイズが印加された前記半導体集積回路の実動作によるデバイス解析を行う第2のデバイス解析手段と、をさらに備え、
前記動作シミュレーション実行手段は、
前記デバイス解析の解析結果に基づいて、前記半導体集積回路の誤動作が検出されたときは、前記第2の外来ノイズを前記検証用ノイズパターンとして前記統合ネットワークの任意の箇所に挿入し、前記半導体集積回路の動作シミュレーションを実行する半導体集積回路の動作解析装置。 - 半導体基板にパッケージを介して実装された半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手順と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手順と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手順と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行手順と、
をコンピュータに実行させるための半導体集積回路の動作解析プログラム。 - 半導体基板にパッケージを介して実装された半導体集積回路から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれのインダクタンス、抵抗及び静電容量を抽出する半導体特性抽出手段と、
抽出された前記インダクタンスと前記抵抗と前記静電容量から、前記半導体基板と前記パッケージと前記半導体集積回路それぞれの個別ネットワークを生成する個別ネットワーク生成手段と、
生成されたそれぞれの前記個別ネットワークを統合し、統合ネットワークを生成する統合ネットワーク生成手段と、
生成された前記統合ネットワークの任意の箇所に検証用ノイズパターンを挿入し、前記半導体集積回路の動作シミュレーションを実行する動作シミュレーション実行手段と、
実行された前記動作シミュレーションの実行結果から前記半導体集積回路の動作を解析し、挿入された前記検証用ノイズパターンにより発生する誤動作を検出するノイズ解析手段と、
検出された前記誤動作が前記検証用ノイズパターンに起因するときは、当該検証用ノイズパターンを前記半導体集積回路の外部から第1の外来ノイズとして印加する外来ノイズ印加手段と、
前記第1の外来ノイズが印加された前記半導体集積回路の実動作によるデバイス解析を行うデバイス解析手段と、
を備える半導体集積回路の動作解析システム。
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US13/062,263 US8341579B2 (en) | 2008-10-27 | 2009-10-27 | Method, apparatus, and system for analyzing operation of semiconductor integrated circuits |
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US20110296369A1 (en) | 2011-12-01 |
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