WO2009090808A1 - 減圧式加熱装置とその加熱方法および電子製品の製造方法 - Google Patents
減圧式加熱装置とその加熱方法および電子製品の製造方法 Download PDFInfo
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- WO2009090808A1 WO2009090808A1 PCT/JP2008/072230 JP2008072230W WO2009090808A1 WO 2009090808 A1 WO2009090808 A1 WO 2009090808A1 JP 2008072230 W JP2008072230 W JP 2008072230W WO 2009090808 A1 WO2009090808 A1 WO 2009090808A1
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- Prior art keywords
- temperature
- heating
- contact
- time
- measuring unit
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 174
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 61
- 230000005855 radiation Effects 0.000 claims description 57
- 238000009529 body temperature measurement Methods 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 6
- 230000006837 decompression Effects 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- 238000012937 correction Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 89
- 239000007789 gas Substances 0.000 description 28
- 239000011800 void material Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0044—Furnaces, ovens, kilns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
- G01K1/143—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations for measuring surface temperatures
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/111—Preheating, e.g. before soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/163—Monitoring a manufacturing process
Definitions
- the present invention relates to a heating technique for heating an object under reduced pressure.
- the present invention relates to a heating device that solders a substrate and an electronic component under reduced pressure, and a heating method thereof.
- the present invention relates to a method for manufacturing an electronic product using the heating device.
- solder is supplied to the first bonding member,
- a second joining member is placed thereon and soldered by heating in a heating device.
- voids hereinafter referred to as voids
- the joint may cause separation, or the heat dissipation efficiency from the second joint member (electronic component) to the first joint member (substrate) may decrease.
- Patent Document 1 discloses a method for manufacturing an electronic product in which solder bonding is performed under reduced pressure. JP 2005-205418 A
- the temperature of the heater in the furnace is controlled in order to ensure the quality of the manufactured electronic products. This is because, if the temperature of the electronic component becomes too high, the characteristics of the electronic component may be changed. On the other hand, if the temperature of the solder is not sufficient, suitable solder bonding cannot be performed. For this reason, it is desirable to grasp the actual temperature of the object rather than the ambient temperature in order to guarantee the characteristics of the electronic component and the solder joint.
- the exact temperature of the object cannot be measured by itself. This is because heating is performed under atmospheric pressure to a temperature lower than the solder solidus (preheating target temperature) and then maintained at this temperature for a while, but the surface of the object is reduced by preheating in reducing gas. To be cleaned. This is because the surface state of the object changes accordingly. If the emissivity of the radiation thermometer is set before the object is cleaned, the measured temperature deviates from the actual object temperature as the surface state of the object changes. In other words, when the pressure and the surface state of the object change, it is difficult to accurately measure the temperature of the object even if a contact-type thermometer or a radiation thermometer is used alone.
- the present invention has been made in order to solve the problems of the conventional techniques described above.
- the problem is that in the process of heating the object under reduced pressure, the actual temperature of the object can be managed throughout the entire process, and the object can be optimally heated based on the actual temperature. It is an object of the present invention to provide a reduced pressure heating apparatus, a heating method thereof, and an electronic product manufacturing method for performing solder bonding using them.
- the reduced pressure heating apparatus of the present invention has a heat treatment chamber in which an exhaust port is formed, and an object to be heated arranged in the heat treatment chamber is heated to a preheating temperature under atmospheric pressure.
- a reduced pressure heating device that preheats and heats to a temperature higher than the preheating temperature under reduced pressure
- the heater that heats the object to be heated in the heat treatment chamber and the temperature of the object to be heated in the heat treatment chamber are measured in contact with each other. It has a contact-type temperature measurement unit, a non-contact type temperature measurement unit that measures the temperature of the heating object in the heat treatment chamber in a non-contact manner, and a control unit that controls the heater and adjusts the non-contact type temperature measurement unit.
- the control unit adjusts the non-contact temperature measurement unit so that there is no error in the measurement value of the non-contact type temperature measurement unit with respect to the measurement value of the contact type temperature measurement unit during preheating under atmospheric pressure. And the adjusted state during heat treatment under reduced pressure. It is characterized in that for controlling the heater based on the measured value of the non-contact temperature measuring unit.
- Such a reduced-pressure heating apparatus accurately measures the temperature of an object to be heated not only under atmospheric pressure but also under reduced pressure, and heats the object under accurate temperature control based on the actual temperature of the object to be heated. Processing can be performed.
- the non-contact temperature measuring unit is a radiation thermometer that detects infrared rays emitted from the object to be heated, and the control unit emits radiation during preheating under atmospheric pressure. Adjust the emissivity setting on the thermometer. This is because the temperature of the heating object can be accurately measured even under reduced pressure.
- the non-contact temperature measuring unit is a radiation thermometer that detects infrared rays emitted from the object to be heated, and the control unit emits radiation during preheating under atmospheric pressure. You may adjust the correction coefficient of the output value of a thermometer. This is because the actual temperature of the object to be heated can be accurately measured.
- a gas inlet is formed in the heat treatment chamber, and preheating under atmospheric pressure is performed when reducing atmosphere gas is introduced into the heat treatment chamber. Good. This is because a reduction reaction takes place on the surface of the object to be heated and it is cleaned.
- a gas supply unit that introduces a reducing atmosphere gas into the heat treatment chamber through the gas inlet. This is because reducing atmosphere gas can be introduced into the heat treatment chamber.
- the above-described reduced pressure heating apparatus may include an exhaust apparatus that is connected to an exhaust port and exhausts the inside of the heat treatment chamber to reduce the pressure. This is because the pressure inside the heat treatment chamber can be reduced.
- the heating method of the present invention is a heating method in which an object is heated while temperature is controlled by a contact-type temperature measurement unit and a non-contact-type temperature measurement unit.
- the target is heated to a preheating temperature lower than the heat treatment temperature while adjusting the emissivity setting in the non-contact temperature measuring unit and controlling the temperature of the target according to the measured value of the temperature measuring unit.
- the object is further heated to the heat treatment temperature while the temperature of the object is controlled by the measured value of the non-contact temperature measuring unit whose emissivity is adjusted in the heating process up to the preheating temperature.
- Such a heating method can heat the object while strictly controlling the temperature without being affected by changes in atmospheric pressure or cleaning of the object.
- the electronic product manufacturing method of the present invention is an electronic product manufacturing method in which an object composed of a plurality of joining members is heated and soldered under reduced pressure, in an atmosphere of a reducing gas at atmospheric pressure, While adjusting the emissivity setting in the non-contact temperature measurement unit and controlling the temperature of the object based on the measured value of the contact temperature measurement unit, the object is heated to a preheating temperature at which the solder does not melt, and the pressure is reduced. Under the reduced pressure, the temperature of the object is controlled by the measured value of the non-contact type temperature measuring unit whose emissivity is adjusted in the heating process up to the preheating temperature, and the temperature is adjusted up to the heat treatment temperature at which the solder melts.
- the object is further heated, and the pressure of the atmosphere is returned to atmospheric pressure while maintaining the heat treatment temperature of the object, and the object is soldered by solidifying the solder under atmospheric pressure.
- Such an electronic product manufacturing method can perform solder bonding by strictly controlling the temperature of an object to be soldered. In addition, voids are less likely to occur inside the solder. In addition, changes in the characteristics of electronic components can be prevented.
- the actual temperature of the object is managed over all the processes, and the decompression type capable of optimally heating the object based on the actual temperature.
- a heating apparatus a heating method thereof, and a method of manufacturing an electronic product that uses them to perform solder bonding.
- FIG. (1) explaining the time of measurement of a contact-type temperature measurement part.
- FIG. (2) explaining the time of measurement of a contact-type temperature measurement part.
- the present invention is embodied in a reduced pressure heating device, a heating method thereof, and a manufacturing method of an electronic product using them.
- the reduced pressure heating apparatus 100 includes an inlet 140, an exhaust outlet 150, a contact temperature measurement unit 110, a radiation thermometer 120, a heater 130, a cylinder 131, and a quartz window 160. And a chamber 190.
- the reduced pressure heating apparatus 100 performs a heat treatment of a heating object inside the chamber 190.
- the chamber 190 is a heat treatment chamber that is sealed during heat treatment, and the atmosphere inside the chamber 190 is replaced by the exhaust port 150 and the introduction port 140 during atmosphere replacement. Further, the pressure inside the chamber 190 can be adjusted. That is, the chamber 190 is depressurized by exhausting gas from the exhaust port 150, and is decompressed to atmospheric pressure by flowing gas from the inlet 140.
- An exhaust device 350 such as a vacuum pump is connected to the exhaust port 150, and a gas supply unit 340 that supplies a reducing gas, an inert gas, and the like is connected to the introduction port 140. It is.
- the reduced pressure heating apparatus 100 heats the substrate 10, the electronic component 20, and the solder 30 in the reduced pressure heating apparatus 100 reduced in pressure as described above, melts the solder 30, and joins the substrate 10 and the electronic component 20. Is for.
- the heater 130 is for contacting and heating the substrate 10.
- the cylinder 131 is an elevating mechanism for moving the heater 130 up and down.
- the lifting mechanism is not limited to the cylinder alone, and any mechanism that can lift and lower the table-like member to be lifted is applicable. Further, the lifting mechanism may be connected to the contact temperature measuring unit 110 instead of the heater 130.
- the contact-type temperature measurement unit 110 is for contacting the substrate 10 and measuring the temperature at the contact point. Further, a gap is formed between the tip of the contact-type temperature measuring unit 110 and the object as shown in FIG.
- the radiation thermometer 120 is an infrared non-contact temperature measuring unit for measuring the surface temperature of the substrate 10 without contact.
- the quartz window 160 is a window provided so that the radiation thermometer 120 can detect infrared rays emitted from the substrate 10.
- the non-contact type temperature measuring unit mentioned here is a non-contact type temperature sensor in which a temperature error occurs between the accurate temperature and the measured temperature in accordance with the change in the surface state of the substrate 10 before and after preheating described later. For example, it is not limited to the infrared type.
- the electronic product manufacturing method according to this embodiment performs heating in two stages.
- the first stage heating preheating stage
- the substrate 10 is heated to the preheating target temperature in the mixed gas atmosphere of the inert gas and the reducing gas under the atmospheric pressure.
- the surface of the wiring of the substrate 10 is reduced and the wettability of the solder 30 is improved. For this reason, a suitable solder joint can be performed.
- the pressure is reduced to a pressure P1 (for example, 10 kPa or less) while maintaining the preheating target temperature.
- the second stage heating is performed under reduced pressure. This is because voids are not generated by soldering under reduced pressure. Even if a void is generated under reduced pressure, the void should be contracted when the internal pressure of the reduced pressure heating apparatus 100 is returned to atmospheric pressure. After this heating, the inside of the reduced pressure heating apparatus 100 is returned to atmospheric pressure, and then the temperature is lowered to solidify the solder 30.
- the preheating target temperature of the substrate 10 is the target temperature of the first stage heating when the substrate 10 is preheated, and is set lower than the solidus temperature of the solder 30 so that the solder 30 does not start to melt.
- the target temperature of the substrate 10 is set to a temperature higher than the liquidus temperature of the solder 30 so that the solder 30 is sufficiently melted and spreads.
- the heat resistance temperature of the electronic component 20 must not be exceeded.
- the solidus temperature of the solder 30 used here is about 235 ° C.
- the liquidus temperature of the solder 30 is about 240 ° C.
- an object on which the solder 30 and the electronic component 20 are placed on the substrate 10 is put into the reduced pressure heating apparatus 100.
- the object is placed on the heater 130.
- a mixture of an inert gas such as nitrogen and a reducing gas such as hydrogen is placed in the reduced pressure heating apparatus 100.
- the pressure inside the reduced pressure heating apparatus 100 after the atmosphere replacement is almost the same as the atmospheric pressure.
- the heater 130 is raised by the cylinder 131.
- the heating of the heater 130 is stopped.
- the substrate 10 is heated by the heater 130 under atmospheric pressure.
- the solder 30 and the electronic component 20 are heated via the substrate 10. Since the atmosphere is replaced with a reducing gas, a reduction reaction occurs on the oxidized surfaces of the substrate 10, the solder 30, and the electronic component 20 by heating during this period. By this cleaning, the wettability of the surface of the substrate 10 with respect to the solder 30 is improved.
- time t1 to Time t2 After time t1, the gas in the reduced pressure heating apparatus 100 is discharged to the outside through the exhaust port 150. For this reason, the pressure inside the reduced pressure heating apparatus 100 decreases.
- the temperature of the substrate 10 is substantially the same as the temperature of the substrate 10 at time t1.
- time t7 The time when the temperature of the substrate 10 reaches room temperature is set to t7. By this time, the solder 30 has solidified. Here, the time at which the substrate 10 is at room temperature is t7, but it may not be at room temperature as long as it is sufficiently lower than the solidus temperature of the solder 30. Subsequent to time t7, the substrate 10 is taken out from the reduced pressure heating apparatus 100.
- FIG. 6 is a block diagram illustrating the temperature control system 200 of the reduced pressure heating apparatus 100.
- the temperature control system 200 of the reduced pressure heating apparatus 100 includes a control unit 180, a contact type temperature measurement unit temperature indicator 112, a radiation thermometer controller 121, and a heater controller 170.
- the control unit 180 performs temperature control, pressure control, and atmosphere replacement in the reduced pressure heating apparatus 100.
- the contact-type temperature measurement unit temperature indicator 112 displays the temperature measured by the contact-type temperature measurement unit 110 and sends temperature data to the control unit 180.
- the radiation thermometer controller 121 is for sending temperature data measured by the radiation thermometer 120 to the control unit 180.
- the heater controller 170 controls an output for heating the substrate 10 by the heater 130.
- the temperature control method by the temperature control system 200 of the reduced pressure heating apparatus 100 will be described with reference to FIG.
- the contact-type temperature measuring unit 110 is in contact with the substrate 10.
- the contact-type temperature measuring unit 110 measures the temperature of the contact point with the substrate 10.
- the temperature measured by the contact temperature measuring unit 110 is sent to the contact temperature measuring unit temperature indicator 112. Further, the temperature measured by the contact-type temperature measurement unit 110 is sent from the contact-type temperature measurement unit temperature indicator 112 to the control unit 180.
- the surface temperature of the substrate 10 is also measured by the radiation thermometer 120.
- the temperature measured by the radiation thermometer 120 is sent to the radiation thermometer controller 121. Further, the temperature measured by the radiation thermometer 120 is sent from the radiation thermometer controller 121 to the control unit 180.
- control unit 180 receives the temperature of the substrate 10 measured by both the contact temperature measuring unit 110 and the radiation thermometer 120.
- the substrate 10 is preheated from time t0 to time t1. Since the reducing atmosphere is provided, the preheating sufficiently cleans the substrate 10. Thereby, the emissivity of infrared rays from the surface of the substrate 10 changes. For this reason, the radiation thermometer 120 cannot measure the exact temperature of the substrate 10 if the emissivity before the cleaning is set. On the other hand, the pressure inside the reduced pressure heating apparatus 100 is substantially equal to the atmospheric pressure. For this reason, an accurate temperature can be measured by the contact-type temperature measuring unit 110. Therefore, from time t0 to time t1, the control unit 180 uses the value measured by the contact temperature measuring unit 110 as the temperature of the substrate 10.
- the control unit 180 adopts the temperature of the contact-type temperature measuring unit 110 and adjusts the emissivity setting in the radiation thermometer 120.
- the control unit 180 calculates an emissivity to be set in the radiation thermometer 120 so that the radiation thermometer 120 outputs the same temperature as the temperature measured by the contact-type temperature measurement unit 110.
- the calculated emissivity is fed back to the radiation thermometer controller 121. Thereby, the emissivity corresponding to the cleaning of the substrate 10 is newly set in the radiation thermometer 120.
- the actual temperature of the substrate 10 can be accurately measured.
- the temperature of the cleaned substrate 10 can be measured by the radiation thermometer 120 under both atmospheric pressure and reduced pressure.
- the pressure inside the reduced pressure heating device 100 decreases.
- the temperature measured by the contact-type temperature measuring unit 110 is lower than the actual temperature of the substrate 10. This is because the gap shown in FIG. 2 exists as described above and the thermal conductivity of the gas decreases.
- the temperature of the substrate 10 measured by the radiation thermometer 120 with adjusted emissivity is adopted instead of the contact temperature measuring unit 110. Based on the temperature measured by the radiation thermometer 120, the heating condition of the heater 130 is set. Further, the time when the temperature of the substrate 10 measured by the radiation thermometer 120 reaches the target temperature is set as t5.
- the pressure inside the reduced pressure heating apparatus 100 is almost equal to the atmospheric pressure. For this reason, the temperature of the substrate 10 is again measured by the contact temperature measuring unit 110. After time t6, the temperature of the substrate 10 may be measured by the contact temperature measuring unit 110.
- the temperature of the substrate 10 measured by the radiation thermometer 120 at time t6 (measured temperature of the substrate 10 between time t1 and time t6) is accurate is measured by the contact temperature measuring unit 110. Can be confirmed.
- the case where there is a difference between the measured temperatures of the contact-type temperature measuring unit 110 and the radiation thermometer 120 at time t6 will be described below.
- the difference in temperature measured by the contact temperature measuring unit 110 and the radiation thermometer 120 at time t6 is caused by further cleaning of the substrate surface from time t1 to time t6.
- the cleaning is considerably advanced by preheating from the time t0 to the time t1, and since the concentration of the reducing gas is low due to the reduced pressure, the difference in the measured temperature should not be large.
- the temperature of the object can be measured more accurately from the next time.
- time t ⁇ b> 6 since the pressure inside the reduced pressure heating apparatus 100 is almost atmospheric pressure, an accurate measurement value can be obtained by the contact temperature measuring unit 110. For this reason, the emissivity which should be set to the radiation thermometer 120 in the time t6 can be calculated
- the emissivity to be set in the radiation thermometer 120 is known by the temperature control method described above. In addition, there is no reason why the emissivity suddenly changes during the period from time t1 to time t6.
- the emissivity is gradually changed from the emissivity to be set at time t1 to the emissivity to be set at time t6.
- the difference in emissivity to be set between time t1 and time t6 is not large.
- the setting of the emissivity in the radiation thermometer 120 can be made to follow and change. Thereby, the object can be heated based on a more accurate temperature from time t1 to time t6 after the next time.
- the temperature of the substrate 10 is measured by the contact temperature measuring unit 110 from time t0 to time t1, and by the radiation thermometer 120 whose emissivity is adjusted from time t1 to time t6, and from time t6 to time t6. It is performed again by the contact-type temperature measuring unit 110 until t7. That is, the temperature of the substrate 10 measured by the contact-type temperature measuring unit 110 is adopted when the pressure inside the reduced pressure heating apparatus 100 is substantially equal to the atmospheric pressure, and when the pressure is lower than the atmospheric pressure, the radiation thermometer 120 is used. The measured temperature of the substrate 10 is employed.
- the actual temperature of the substrate 10 is measured, fed back to the heating conditions of the substrate 10, and the reduced pressure heating apparatus 100 capable of soldering the substrate 10 and the electronic component 20 along the optimum temperature profile, and its heating method and An electronic product manufacturing method using them has been realized.
- the temperature control of the reduced pressure heating apparatus 100 is performed only by the contact temperature measuring unit 110, when it is determined that the temperature of the substrate 10 has reached the target temperature, and the heating of the substrate 10 by the heater 130 is stopped. The actual temperature of the substrate 10 has already exceeded the ultimate target temperature.
- the actual temperature of the substrate 10 cannot be measured even with only the radiation thermometer 120. In this embodiment, there is no such harmful effect.
- the emissivity of the radiation thermometer 120 was adjusted when measuring the actual temperature of the heating object. However, it is also possible to measure the actual temperature of the heating object without adjusting the emissivity of the radiation thermometer 120. For example, there is a case where the control unit 180 corrects the output value of the temperature of the radiation thermometer 120 that is not adjusted for emissivity.
- the output value of the radiation thermometer 120 is corrected from the measured value of the contact temperature measuring unit 110 and the measured value of the radiation thermometer 120.
- a correction coefficient is obtained in advance.
- the actual temperature of the heating object can be measured by the radiation thermometer 120 from time t1 to time t6. Thereby, the effect similar to the 1st form can be acquired.
- the contact-type temperature measurement unit and the non-contact-type temperature measurement unit are used in combination. Under atmospheric pressure, the substrate is heated based on the temperature of the substrate measured by the contact temperature measuring unit, and under reduced pressure, the substrate is heated based on the temperature of the substrate measured by the non-contact temperature measuring unit.
- the substrate temperature can be controlled and heated in all processes.
- a reduced pressure heating apparatus capable of soldering the substrate and the electronic component while suppressing the generation of voids under strict temperature control is realized.
- heating can be controlled not by the heater temperature but by the actual temperature of the substrate.
- the actual temperature of the measured substrate is also a signal for moving to the next process. Therefore, it has become possible to manufacture electronic products with consistent product quality. For this reason, solder joining of a semiconductor element having an atmosphere replacement process to a substrate can be performed with high reliability.
- the object to be soldered may not be a substrate and an electronic component.
- a cooling member and a substrate may be used.
- the cooling member, the substrate, and the electronic component can be soldered at a time.
- the contact-type temperature measuring unit temperature indicator 112, the radiation thermometer controller 121, and the heater controller 170 may all be carried by the control unit 180. This is because there is no change in the effect played.
- the heater does not have to be a contact type.
- An induction coil or the like may be used depending on the lamp heater or the object. Hot air may also be used. Further, after the solder 30 is melted and the inside of the heating apparatus returns to the atmospheric pressure, the cooling may be transferred to another furnace. Also, the liquidus temperature and the solidus temperature of the solder are examples and depend on the type of solder used.
- the contact temperature measuring unit 110 there may be a plurality of contact temperature measuring units 110 and radiation thermometers 120. Also, at time t6, if there is a large difference between the temperatures indicated by the contact temperature measuring unit 110 and the radiation thermometer 120, an alarm can be sounded. Even if no reducing gas is used, it is only necessary that the atmosphere is substantially reducing as viewed from the object. Depending on the object, the atmosphere may be left as it is.
- the contact-type temperature measuring unit 110 and the radiation thermometer 120 may measure a portion closer to the substrate 10. This is because if the measurement points are close, it is considered that the actual temperature difference between the measurement points is small.
- the reduced pressure heating device and the heating method thereof according to the present invention are not limited to solder joint applications. This is because the same effect can be obtained if it is preheated in a reducing gas atmosphere and then heated under reduced pressure.
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
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Abstract
Description
20…電子部品
30…半田
100…減圧式加熱装置
110…接触式温度測定部
112…接触式温度測定部温度指示計
120…放射温度計
121…放射温度計コントローラ
130…加熱器
140…導入口
150…排気口
170…ヒータコントローラ
180…制御部
190…チャンバー
200…温度制御システム
340…ガス供給部
350…排気装置
この後,第1段階の加熱を行う。加熱器130により基板10を加熱し始めた時刻をt0とする。
時刻t0の後,大気圧下で加熱器130により基板10を加熱する。半田30と電子部品20とは基板10を介して加熱される。雰囲気が還元ガスに置換されているため,この期間の加熱により,基板10および半田30および電子部品20の酸化した表面で還元反応が生じる。この清浄化により,半田30に対する基板10の表面の濡れ性が向上する。
基板10が予熱目標温度に達した時刻をt1とする。このとき,半田30は固相線温度に達していないので,まだ溶融していない。また,基板10および半田30および電子部品20の清浄化が進んだ状態となっている。
時刻t1の後,排気口150から減圧式加熱装置100内のガスを外部に排出させる。このため,減圧式加熱装置100の内部の圧力は下がる。なお,基板10の温度は時刻t1における基板10の温度とほぼ同じである。
減圧式加熱装置100の内部の減圧ができたところで,排気口150からのガスの排出を止める。この時刻をt2とする。
時刻t2の後,第2段階の加熱を始める。この際,減圧式加熱装置100の内部を減圧した状態のまま,加熱を行う。
基板10の温度が半田30の固相線温度に達した時刻をt3とする。ここで,半田30と電子部品20とは基板10とほぼ同じ温度に達しているはずである。このため,半田30は溶融し始める。
基板10の温度が半田30の液相線温度に達した時刻をt4とする。ここで,半田30と電子部品20とは基板10とほぼ同じ温度に達しているはずである。このため,半田30はほぼ全て溶融した状態になっている。
基板10が到達目標温度に達した時刻をt5とする。時刻t5で,加熱器130による加熱を停止する。このとき,半田30は完全に溶融し濡れ広がっている。ここで,仮に半田30の内部にボイドが発生していても,ボイドの内圧は減圧式加熱装置100の内部の圧力とほぼ同じである。
時刻t5の後,基板10の温度を一定に保ちつつ,導入口140から減圧式加熱装置100に不活性ガス又はそれに還元ガスを混入したものを少しずつ流入させる。このため,炉内の圧力は徐々に上昇する。ここで,半田30は溶融したままの状態である。仮に半田30の内部にボイドが発生していた場合,減圧式加熱装置100の内部の圧力の上昇に伴い,ボイドは収縮する。
減圧式加熱装置100の内部の圧力がほぼ大気圧となったところで導入口140からのガスの流入を止める。この時刻をt6とする。このとき,半田30は溶融した状態である。時刻t2から時刻t5にかけて半田30の内部にボイドが生じていれば,既に収縮し終えた状態になっている。
時刻t6の後,大気圧を維持したまま基板10の温度を下降させる。これにより,半田30は凝固する。
基板10の温度が常温に達した時刻をt7とする。このときまでには,半田30は凝固している。ここでは基板10が常温となる時刻をt7としたが,半田30の固相線温度より十分下がっていれば,常温でなくともよい。時刻t7よりも後に,基板10を減圧式加熱装置100から取り出す。
Claims (8)
- 排気口が形成された加熱処理室を有し,前記加熱処理室内に配置された加熱対象物を,大気圧下で予熱温度まで予熱し,減圧下で前記予熱温度より高い温度まで加熱処理する減圧式加熱装置において,
前記加熱処理室内の加熱対象物を加熱する加熱器と,
前記加熱処理室内の加熱対象物の温度を接触して測定する接触式温度測定部と,
前記加熱処理室内の加熱対象物の温度を非接触で測定する非接触式温度測定部と,
前記加熱器の制御および前記非接触式温度測定部の調整を行う制御部とを有し,
前記制御部は,
大気圧下での予熱の際に,前記接触式温度測定部の測定値に対して前記非接触式温度測定部の測定値の誤差がなくなるように前記非接触式温度測定部を調整し,
減圧下での加熱処理の際に,その調整された状態での前記非接触式温度測定部の測定値に基づいて前記加熱器を制御することを特徴とする減圧式加熱装置。 - 請求の範囲第1項に記載の減圧式加熱装置において,
前記非接触式温度測定部は,加熱対象物から放射される赤外線を検出する放射温度計であり,
前記制御部は,大気圧下での予熱の際に,前記放射温度計における放射率の設定を調整することを特徴とする減圧式加熱装置。 - 請求の範囲第1項に記載の減圧式加熱装置において,
前記非接触式温度測定部は,加熱対象物から放射される赤外線を検出する放射温度計であり,
前記制御部は,大気圧下での予熱の際に,前記放射温度計の出力値の補正係数を調整することを特徴とする減圧式加熱装置。 - 請求の範囲第1項から第3項までのいずれか1つに記載の減圧式加熱装置において,
前記加熱処理室にガス導入口が形成されており,
前記ガス導入口を通して前記加熱処理室内に雰囲気ガスを導入するガス供給部を有することを特徴とする減圧式加熱装置。 - 請求の範囲第4項に記載の減圧式加熱装置において,
大気圧下での予熱を,前記加熱処理室の内部に還元性の雰囲気ガスを導入した状態で行うことを特徴とする減圧式加熱装置。 - 請求の範囲第1項から第5項までのいずれか1つに記載の減圧式加熱装置において,
前記排気口に接続され,前記加熱処理室の内部を排気して減圧する排気装置を有することを特徴とする減圧式加熱装置。 - 接触式温度測定部と非接触式温度測定部とにより温度制御しつつ対象物を加熱する加熱方法であって,
大気圧の還元ガスの雰囲気中で,前記接触式温度測定部の測定値により前記非接触式温度測定部における放射率の設定の調整と前記対象物の温度制御とをしつつ,加熱処理温度よりも低い予熱温度まで前記対象物を加熱し,
減圧下で,前記予熱温度までの加熱過程にて放射率の設定が調整された前記非接触式温度測定部の測定値により前記対象物の温度制御をしつつ,加熱処理温度まで前記対象物をさらに加熱することを特徴とする加熱方法。 - 複数の接合部材からなる対象物を,減圧下で加熱して半田接合する電子製品の製造方法であって,
大気圧の還元ガスの雰囲気中で,接触式温度測定部の測定値により非接触式温度測定部における放射率の設定の調整と前記対象物の温度制御とをしつつ,半田が溶融するに至らない予熱温度まで前記対象物を加熱し,
減圧し,
減圧下で,前記予熱温度までの加熱過程にて放射率の設定が調整された前記非接触式温度測定部の測定値により前記対象物の温度制御をしつつ,半田が溶融する加熱処理温度まで前記対象物をさらに加熱し,
前記対象物の加熱処理温度を維持しつつ,雰囲気の圧力を大気圧まで戻し, 大気圧下で,半田を凝固させて前記対象物を半田接合することを特徴とする電子製品の製造方法。
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US12/451,070 US8271124B2 (en) | 2008-01-17 | 2008-12-08 | Decompressing type heater, its heating method, and electronic product manufacturing method |
KR1020097017072A KR101006632B1 (ko) | 2008-01-17 | 2008-12-08 | 감압식 가열 장치와 그 가열 방법 및 전자 제품의 제조 방법 |
CN2008800091380A CN101642003B (zh) | 2008-01-17 | 2008-12-08 | 减压式加热装置及其加热方法和电子产品的制造方法 |
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WO2016104710A1 (ja) | 2014-12-26 | 2016-06-30 | 富士電機株式会社 | 加熱冷却機器 |
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KR102105587B1 (ko) * | 2018-12-07 | 2020-05-07 | 삼원동관 주식회사 | 유도 브레이징 접합 장치 및 방법 |
DE102022115545A1 (de) | 2022-06-22 | 2023-12-28 | Ersa Gmbh | Verfahren zum Erwärmen zum Aus- und/oder Einlöten von elektronischen Bauteilen, insbesondere in einem Rework-Lötprozess, und zugehörige Lötanlage |
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CN101642003B (zh) | 2011-05-25 |
DE112008000853B4 (de) | 2022-06-30 |
CN101642003A (zh) | 2010-02-03 |
KR20090103942A (ko) | 2009-10-01 |
JP4263761B1 (ja) | 2009-05-13 |
JP2009170705A (ja) | 2009-07-30 |
US20100121479A1 (en) | 2010-05-13 |
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US8271124B2 (en) | 2012-09-18 |
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