WO2009078448A1 - 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 - Google Patents
銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 Download PDFInfo
- Publication number
- WO2009078448A1 WO2009078448A1 PCT/JP2008/073006 JP2008073006W WO2009078448A1 WO 2009078448 A1 WO2009078448 A1 WO 2009078448A1 JP 2008073006 W JP2008073006 W JP 2008073006W WO 2009078448 A1 WO2009078448 A1 WO 2009078448A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- manufacturing
- copper conductor
- wiring
- conductor film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01044—Ruthenium [Ru]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0709—Catalytic ink or adhesive for electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1157—Using means for chemical reduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/125—Inorganic compounds, e.g. silver salt
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Conductive Materials (AREA)
- Catalysts (AREA)
- Chemically Coating (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009546290A JP5163655B2 (ja) | 2007-12-18 | 2008-12-17 | 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 |
CN2008801215234A CN101903959B (zh) | 2007-12-18 | 2008-12-17 | 铜导体膜及其制造方法、导电性基板及其制造方法、铜导体布线及其制造方法、以及处理液 |
US12/808,768 US8801971B2 (en) | 2007-12-18 | 2008-12-17 | Copper conductor film and manufacturing method thereof, conductive substrate and manufacturing method thereof, copper conductor wiring and manufacturing method thereof, and treatment solution |
KR1020107013643A KR101247431B1 (ko) | 2007-12-18 | 2008-12-17 | 구리 도체막 및 그 제조방법, 도전성 기판 및 그 제조방법, 구리 도체 배선 및 그 제조방법, 및 처리액 |
EP08861192.6A EP2234119A4 (en) | 2007-12-18 | 2008-12-17 | COPPER CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR, CONDUCTIVE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, COPPER CONDUCTIVE THREAD AND METHOD FOR MANUFACTURING THE SAME, AND PROCESSING SOLUTION THEREOF |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-325863 | 2007-12-18 | ||
JP2007325863 | 2007-12-18 | ||
JP2008-062966 | 2008-03-12 | ||
JP2008062966 | 2008-03-12 | ||
JP2008-062964 | 2008-03-12 | ||
JP2008062964 | 2008-03-12 | ||
JP2008097349 | 2008-04-03 | ||
JP2008-097349 | 2008-04-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009078448A1 true WO2009078448A1 (ja) | 2009-06-25 |
Family
ID=40795561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/073006 WO2009078448A1 (ja) | 2007-12-18 | 2008-12-17 | 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8801971B2 (ja) |
EP (1) | EP2234119A4 (ja) |
JP (1) | JP5163655B2 (ja) |
KR (1) | KR101247431B1 (ja) |
CN (1) | CN101903959B (ja) |
TW (1) | TWI399457B (ja) |
WO (1) | WO2009078448A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011034019A1 (ja) * | 2009-09-16 | 2011-03-24 | 日立化成工業株式会社 | 印刷法用インク及びそれに用いられる金属ナノ粒子、並びに配線、回路基板、半導体パッケージ |
US20120219703A1 (en) * | 2009-10-26 | 2012-08-30 | Industry-Academic Cooperation Foundation, Yonsei University | Method for Manufacturing Conductive Metal Thin Film Using Carboxylic Acid |
CN102713002A (zh) * | 2010-01-28 | 2012-10-03 | 独立行政法人科学技术振兴机构 | 图案化导电膜的形成方法 |
WO2013018777A1 (ja) | 2011-08-03 | 2013-02-07 | 日立化成工業株式会社 | 組成物セット、導電性基板及びその製造方法並びに導電性接着材組成物 |
JP2013175560A (ja) * | 2012-02-24 | 2013-09-05 | Hitachi Chemical Co Ltd | 140℃以下で導体化して得られる金属銅膜、金属銅パターン及びそれらの製造方法 |
CN104475758A (zh) * | 2009-09-16 | 2015-04-01 | 日立化成工业株式会社 | 液状组合物 |
US20150194235A1 (en) * | 2012-09-26 | 2015-07-09 | Fujifilm Corporation | Method of manufacturing conductive film and composition for forming conductive film |
KR20190039942A (ko) * | 2016-08-04 | 2019-04-16 | 코프린트 테크놀로지스 리미티드 | 고전도성 구리 패턴을 생산하기 위한 제제 및 공정 |
WO2023119883A1 (ja) * | 2021-12-24 | 2023-06-29 | 富士フイルム株式会社 | 検査装置、印刷システム、検査システム及びキュアシステム、基板の製造方法及びプログラム |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103210452B (zh) * | 2010-11-16 | 2015-06-17 | 旭硝子株式会社 | 导电浆料及带导电膜的基材 |
TWI500050B (zh) * | 2011-02-25 | 2015-09-11 | Univ Nat Taiwan | 導電薄膜的製法 |
JPWO2013021567A1 (ja) * | 2011-08-11 | 2015-03-05 | 三洋電機株式会社 | 金属の接合方法および金属接合構造 |
TW201339279A (zh) * | 2011-11-24 | 2013-10-01 | Showa Denko Kk | 導電圖型形成方法及藉由光照射或微波加熱的導電圖型形成用組成物 |
KR101353149B1 (ko) * | 2011-12-27 | 2014-01-27 | 삼성전기주식회사 | 구리분말 제조방법 |
JP2013206722A (ja) * | 2012-03-28 | 2013-10-07 | Fujifilm Corp | 液状組成物、金属銅膜、及び導体配線、並びに金属銅膜の製造方法 |
JP5275498B1 (ja) * | 2012-07-03 | 2013-08-28 | 石原薬品株式会社 | 導電膜形成方法及び焼結進行剤 |
CN104620168B (zh) * | 2013-04-05 | 2018-07-17 | 苏州诺菲纳米科技有限公司 | 带有融合金属纳米线的透明导电电极、它们的结构设计及其制造方法 |
JP5700864B2 (ja) * | 2013-05-15 | 2015-04-15 | 石原ケミカル株式会社 | 銅微粒子分散液、導電膜形成方法及び回路基板 |
JP5993812B2 (ja) * | 2013-07-10 | 2016-09-14 | 富士フイルム株式会社 | 導電膜の製造方法 |
JP2015026567A (ja) * | 2013-07-29 | 2015-02-05 | 富士フイルム株式会社 | 導電膜形成用組成物及び導電膜の製造方法 |
WO2015152625A1 (ko) | 2014-04-01 | 2015-10-08 | 전자부품연구원 | 광 소결용 잉크 조성물, 그를 이용한 배선기판 및 그의 제조 방법 |
JP6945120B2 (ja) | 2014-08-29 | 2021-10-06 | 株式会社Flosfia | 金属膜形成方法 |
DE102015200506A1 (de) * | 2015-01-15 | 2016-07-21 | Robert Bosch Gmbh | Verfahren zur Herstellung einer bondbaren Metallisierung und korrespondierende bondbare Metallisierung |
JP6967839B2 (ja) | 2016-03-23 | 2021-11-17 | 日東電工株式会社 | 加熱接合用シート、ダイシングテープ付き加熱接合用シート、及び、接合体の製造方法、パワー半導体装置 |
JP6857166B2 (ja) * | 2017-12-15 | 2021-04-14 | Dowaエレクトロニクス株式会社 | 球状銀粉およびその製造方法 |
CN109797387B (zh) * | 2019-01-24 | 2020-11-06 | 山东科技大学 | 金属表面纳米铜\微合金层自润滑耐磨蚀复合改性方法 |
JP6874785B2 (ja) * | 2019-03-27 | 2021-05-19 | 三菱マテリアル株式会社 | 絶縁銅線および電気コイル |
CN116655167B (zh) * | 2023-06-21 | 2024-04-12 | 广东工业大学 | 一种处理含络合态铜废水的方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61279531A (ja) * | 1985-06-05 | 1986-12-10 | Hitachi Ltd | 銅と樹脂との接着方法 |
JPH07197266A (ja) * | 1993-12-28 | 1995-08-01 | Nippon Riironaale Kk | 酸化銅(i)コロイドの金属化によるダイレクトプレーティング方法 |
JP2003203522A (ja) | 2001-10-31 | 2003-07-18 | Fujikura Kasei Co Ltd | 銀化合物ペースト |
JP2004225159A (ja) * | 2003-01-22 | 2004-08-12 | Texas Instruments Inc | 導電性銅構造の形成方法 |
JP2004273205A (ja) | 2003-03-06 | 2004-09-30 | Harima Chem Inc | 導電性ナノ粒子ペースト |
JP3599950B2 (ja) | 1997-04-16 | 2004-12-08 | 株式会社アルバック | 金属ペーストの焼成方法 |
JP2005081501A (ja) | 2003-09-09 | 2005-03-31 | Ulvac Japan Ltd | 金属ナノ粒子及びその製造方法、金属ナノ粒子分散液及びその製造方法、並びに金属細線及び金属膜及びその形成方法 |
JP2005272961A (ja) * | 2004-03-25 | 2005-10-06 | Fuji Photo Film Co Ltd | 導電性パターン材料、金属微粒子パターン材料及びパターン形成方法 |
JP2006124814A (ja) * | 2004-11-01 | 2006-05-18 | Asahi Glass Co Ltd | プリント配線板用金属箔の製造方法及びプリント配線板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61176192A (ja) * | 1985-01-31 | 1986-08-07 | 株式会社日立製作所 | 銅と樹脂との接着方法 |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
JP3907151B2 (ja) | 2000-01-25 | 2007-04-18 | 株式会社東芝 | 半導体装置の製造方法 |
WO2004103043A1 (ja) * | 2003-05-16 | 2004-11-25 | Harima Chemicals, Inc. | 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法 |
US20070172691A1 (en) * | 2004-02-04 | 2007-07-26 | Yosi Shacham-Diamond | Electroless coating methods for depositing silver-tungsten coatings, kits and products |
KR20070111549A (ko) | 2005-03-11 | 2007-11-21 | 히다치 가세고교 가부시끼가이샤 | 구리의 표면 처리 방법 및 구리 |
-
2008
- 2008-12-17 WO PCT/JP2008/073006 patent/WO2009078448A1/ja active Application Filing
- 2008-12-17 KR KR1020107013643A patent/KR101247431B1/ko not_active IP Right Cessation
- 2008-12-17 US US12/808,768 patent/US8801971B2/en not_active Expired - Fee Related
- 2008-12-17 CN CN2008801215234A patent/CN101903959B/zh not_active Expired - Fee Related
- 2008-12-17 JP JP2009546290A patent/JP5163655B2/ja not_active Expired - Fee Related
- 2008-12-17 EP EP08861192.6A patent/EP2234119A4/en not_active Withdrawn
- 2008-12-18 TW TW097149525A patent/TWI399457B/zh not_active IP Right Cessation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61279531A (ja) * | 1985-06-05 | 1986-12-10 | Hitachi Ltd | 銅と樹脂との接着方法 |
JPH07197266A (ja) * | 1993-12-28 | 1995-08-01 | Nippon Riironaale Kk | 酸化銅(i)コロイドの金属化によるダイレクトプレーティング方法 |
JP3599950B2 (ja) | 1997-04-16 | 2004-12-08 | 株式会社アルバック | 金属ペーストの焼成方法 |
JP2003203522A (ja) | 2001-10-31 | 2003-07-18 | Fujikura Kasei Co Ltd | 銀化合物ペースト |
JP2004225159A (ja) * | 2003-01-22 | 2004-08-12 | Texas Instruments Inc | 導電性銅構造の形成方法 |
JP2004273205A (ja) | 2003-03-06 | 2004-09-30 | Harima Chem Inc | 導電性ナノ粒子ペースト |
JP2005081501A (ja) | 2003-09-09 | 2005-03-31 | Ulvac Japan Ltd | 金属ナノ粒子及びその製造方法、金属ナノ粒子分散液及びその製造方法、並びに金属細線及び金属膜及びその形成方法 |
JP2005272961A (ja) * | 2004-03-25 | 2005-10-06 | Fuji Photo Film Co Ltd | 導電性パターン材料、金属微粒子パターン材料及びパターン形成方法 |
JP2006124814A (ja) * | 2004-11-01 | 2006-05-18 | Asahi Glass Co Ltd | プリント配線板用金属箔の製造方法及びプリント配線板 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2234119A4 |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2479314A4 (en) * | 2009-09-16 | 2017-08-02 | Hitachi Chemical Company, Ltd. | Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition |
JP5903887B2 (ja) * | 2009-09-16 | 2016-04-13 | 日立化成株式会社 | 印刷法用インクの製造方法 |
KR20120094157A (ko) * | 2009-09-16 | 2012-08-23 | 히다치 가세고교 가부시끼가이샤 | 인쇄법용 잉크 및 그에 이용되는 금속 나노 입자, 및 배선, 회로 기판, 반도체 패키지 |
US9457406B2 (en) | 2009-09-16 | 2016-10-04 | Hitachi Chemical Company, Ltd. | Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition |
KR101633152B1 (ko) * | 2009-09-16 | 2016-06-23 | 히타치가세이가부시끼가이샤 | 인쇄법용 잉크 및 그에 이용되는 금속 나노 입자, 및 배선, 회로 기판, 반도체 패키지 |
TWI494471B (zh) * | 2009-09-16 | 2015-08-01 | Hitachi Chemical Co Ltd | 金屬銅膜及其製造方法、金屬銅圖案及使用其之導體配線、金屬銅凸塊、熱傳導路徑、接合材及液狀組成物 |
CN102549086A (zh) * | 2009-09-16 | 2012-07-04 | 日立化成工业株式会社 | 印刷法用油墨以及用于该油墨的金属纳米粒子、以及布线、电路基板、半导体封装 |
WO2011034019A1 (ja) * | 2009-09-16 | 2011-03-24 | 日立化成工業株式会社 | 印刷法用インク及びそれに用いられる金属ナノ粒子、並びに配線、回路基板、半導体パッケージ |
JP5747821B2 (ja) * | 2009-09-16 | 2015-07-15 | 日立化成株式会社 | 金属銅膜及びその製造方法、金属銅パターン及びそれを用いた導体配線、金属銅バンプ、熱伝導路、接合材、並びに液状組成物 |
CN104475758A (zh) * | 2009-09-16 | 2015-04-01 | 日立化成工业株式会社 | 液状组合物 |
US9318233B2 (en) * | 2009-10-26 | 2016-04-19 | Hanwha Chemical Corporation | Method for manufacturing conductive metal thin film using carboxylic acid |
US20120219703A1 (en) * | 2009-10-26 | 2012-08-30 | Industry-Academic Cooperation Foundation, Yonsei University | Method for Manufacturing Conductive Metal Thin Film Using Carboxylic Acid |
US8828555B2 (en) | 2010-01-28 | 2014-09-09 | Japan Science And Technology Agency | Method for forming patterned conductive film |
CN102713002A (zh) * | 2010-01-28 | 2012-10-03 | 独立行政法人科学技术振兴机构 | 图案化导电膜的形成方法 |
US9435032B2 (en) | 2010-01-28 | 2016-09-06 | Japan Science And Technology Agency | Method for forming patterned conductive film |
KR101970373B1 (ko) * | 2011-08-03 | 2019-04-18 | 히타치가세이가부시끼가이샤 | 조성물 세트, 도전성 기판 및 그 제조 방법 및 도전성 접착재 조성물 |
KR20140046012A (ko) * | 2011-08-03 | 2014-04-17 | 히타치가세이가부시끼가이샤 | 조성물 세트, 도전성 기판 및 그 제조 방법 및 도전성 접착재 조성물 |
WO2013018777A1 (ja) | 2011-08-03 | 2013-02-07 | 日立化成工業株式会社 | 組成物セット、導電性基板及びその製造方法並びに導電性接着材組成物 |
JP2013175560A (ja) * | 2012-02-24 | 2013-09-05 | Hitachi Chemical Co Ltd | 140℃以下で導体化して得られる金属銅膜、金属銅パターン及びそれらの製造方法 |
US20150194235A1 (en) * | 2012-09-26 | 2015-07-09 | Fujifilm Corporation | Method of manufacturing conductive film and composition for forming conductive film |
KR20190039942A (ko) * | 2016-08-04 | 2019-04-16 | 코프린트 테크놀로지스 리미티드 | 고전도성 구리 패턴을 생산하기 위한 제제 및 공정 |
JP2019529587A (ja) * | 2016-08-04 | 2019-10-17 | コププリント テクノロジーズ リミテッドCopprint Technologies Ltd | 高導電性銅パターンを製造するための調合物および方法 |
KR102397518B1 (ko) | 2016-08-04 | 2022-05-13 | 코프린트 테크놀로지스 리미티드 | 고전도성 구리 패턴을 생산하기 위한 제제 및 공정 |
WO2023119883A1 (ja) * | 2021-12-24 | 2023-06-29 | 富士フイルム株式会社 | 検査装置、印刷システム、検査システム及びキュアシステム、基板の製造方法及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009078448A1 (ja) | 2011-04-28 |
US20120125659A1 (en) | 2012-05-24 |
KR101247431B1 (ko) | 2013-03-26 |
TW200940743A (en) | 2009-10-01 |
CN101903959A (zh) | 2010-12-01 |
TWI399457B (zh) | 2013-06-21 |
US8801971B2 (en) | 2014-08-12 |
EP2234119A4 (en) | 2015-04-15 |
KR20100084698A (ko) | 2010-07-27 |
JP5163655B2 (ja) | 2013-03-13 |
EP2234119A1 (en) | 2010-09-29 |
CN101903959B (zh) | 2013-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009078448A1 (ja) | 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 | |
CN103429012B (zh) | 一种pcb板上的背钻孔的制备方法以及pcb板 | |
TW200731898A (en) | Circuit board structure and method for fabricating the same | |
EP1633175A4 (en) | INSULATION INTERIOR FOR PRINTED CONNECTION CARD, PRINTED CONNECTION CARD, AND METHOD OF MANUFACTURING THE SAME | |
TW200520110A (en) | Printed wiring board, its preparation and circuit device | |
WO2007027558A3 (en) | Method of forming pitch multipled contacts | |
TW200634983A (en) | Method of forming a plug | |
BR0114155A (pt) | Banho e método de deposição sem eletricidade de prata em superfìcies metálicas | |
WO2006098820A3 (en) | Method of forming a semiconductor device having a diffusion barrier stack and structure thereof | |
US20020117400A1 (en) | Process for producing printed wiring board | |
WO2010065301A3 (en) | Method of enabling selective area plating on a substrate | |
TWI256684B (en) | Method of fabricate interconnect structures | |
EP1619719A3 (en) | Method of manufacturing a wiring board including electroplating | |
TW200610463A (en) | Circuit board and method of manufacturing the same | |
CN103108500B (zh) | 一种制作分段式金手指的方法 | |
TW200737455A (en) | Method for fabricating a metal protecting layer on electrically connecting pad of circuit board | |
JP2006005176A5 (ja) | ||
WO2009153129A3 (de) | Verfahren zur herstellung einer elektronischen baugruppe | |
WO2007128015A3 (de) | Verfahren zur herstellung wenigstens eines leitfähigen elements einer leiterplatte sowie leiterplatte und verwendung eines derartigen verfahrens | |
TW200802766A (en) | Substrate strip and substrate structure and method for manufacturing the same | |
MY160142A (en) | Copper conductor film and manufacturing method thereof, conductive substrate and manufacturing method thereof, copper conductor wiring and manufacturing method thereof and treatment solution | |
TW200739769A (en) | Method of manufacturing wiring board | |
KR20140108770A (ko) | 레이저와 인쇄방식이 하이브리드된 플렉서블 기판 및 이의 제조 방법 | |
JP2003264159A5 (ja) | ||
TW200623983A (en) | Method for cutting printed circuit board |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880121523.4 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08861192 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009546290 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12808768 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20107013643 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008861192 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: PI 2010002850 Country of ref document: MY |