WO2009078448A1 - 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 - Google Patents

銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 Download PDF

Info

Publication number
WO2009078448A1
WO2009078448A1 PCT/JP2008/073006 JP2008073006W WO2009078448A1 WO 2009078448 A1 WO2009078448 A1 WO 2009078448A1 JP 2008073006 W JP2008073006 W JP 2008073006W WO 2009078448 A1 WO2009078448 A1 WO 2009078448A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper
manufacturing
copper conductor
wiring
conductor film
Prior art date
Application number
PCT/JP2008/073006
Other languages
English (en)
French (fr)
Inventor
Hideo Nakako
Kazunori Yamamoto
Yasushi Kumashiro
Youichi Machii
Shunya Yokozawa
Yoshinori Ejiri
Katsuyuki Masuda
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to JP2009546290A priority Critical patent/JP5163655B2/ja
Priority to CN2008801215234A priority patent/CN101903959B/zh
Priority to US12/808,768 priority patent/US8801971B2/en
Priority to KR1020107013643A priority patent/KR101247431B1/ko
Priority to EP08861192.6A priority patent/EP2234119A4/en
Publication of WO2009078448A1 publication Critical patent/WO2009078448A1/ja

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1635Composition of the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1635Composition of the substrate
    • C23C18/1637Composition of the substrate metallic substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1803Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28Sensitising or activating
    • C23C18/30Activating or accelerating or sensitising with palladium or other noble metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/29294Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8384Sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01044Ruthenium [Ru]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0106Neodymium [Nd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/203Ultrasonic frequency ranges, i.e. KHz
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0315Oxidising metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0709Catalytic ink or adhesive for electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1157Using means for chemical reduction
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/125Inorganic compounds, e.g. silver salt
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12903Cu-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Conductive Materials (AREA)
  • Catalysts (AREA)
  • Chemically Coating (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

 導電性及び配線パターン形成に優れ、配線幅及び配線間スペースが狭くなっても、回路間の絶縁低下のない銅導体膜及びその製造方法並びにパターニングされた銅導体配線を提供する。  還元剤に対して触媒活性を有する金属と銅酸化物を共に含有してなる銅系粒子含有層を、一つの溶液中に銅酸化物をイオン化又は錯体化する薬剤と、銅イオン又は銅錯体を還元し金属銅にする還元剤を含む処理液を用いて処理してなる銅導体膜及びその製造方法並びに銅系粒子含有層が印刷によりパターニングされており、そのパターニングされた粒子含有層を一つの溶液中に銅酸化物をイオン化又は錯体化する薬剤と、銅イオン又は銅錯体を還元し金属銅にする還元剤を共に含む溶液を用いた処理方法により処理して得られるパターニングされた銅導体配線である。
PCT/JP2008/073006 2007-12-18 2008-12-17 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 WO2009078448A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009546290A JP5163655B2 (ja) 2007-12-18 2008-12-17 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液
CN2008801215234A CN101903959B (zh) 2007-12-18 2008-12-17 铜导体膜及其制造方法、导电性基板及其制造方法、铜导体布线及其制造方法、以及处理液
US12/808,768 US8801971B2 (en) 2007-12-18 2008-12-17 Copper conductor film and manufacturing method thereof, conductive substrate and manufacturing method thereof, copper conductor wiring and manufacturing method thereof, and treatment solution
KR1020107013643A KR101247431B1 (ko) 2007-12-18 2008-12-17 구리 도체막 및 그 제조방법, 도전성 기판 및 그 제조방법, 구리 도체 배선 및 그 제조방법, 및 처리액
EP08861192.6A EP2234119A4 (en) 2007-12-18 2008-12-17 COPPER CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR, CONDUCTIVE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, COPPER CONDUCTIVE THREAD AND METHOD FOR MANUFACTURING THE SAME, AND PROCESSING SOLUTION THEREOF

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-325863 2007-12-18
JP2007325863 2007-12-18
JP2008-062966 2008-03-12
JP2008062966 2008-03-12
JP2008-062964 2008-03-12
JP2008062964 2008-03-12
JP2008097349 2008-04-03
JP2008-097349 2008-04-03

Publications (1)

Publication Number Publication Date
WO2009078448A1 true WO2009078448A1 (ja) 2009-06-25

Family

ID=40795561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/073006 WO2009078448A1 (ja) 2007-12-18 2008-12-17 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液

Country Status (7)

Country Link
US (1) US8801971B2 (ja)
EP (1) EP2234119A4 (ja)
JP (1) JP5163655B2 (ja)
KR (1) KR101247431B1 (ja)
CN (1) CN101903959B (ja)
TW (1) TWI399457B (ja)
WO (1) WO2009078448A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011034019A1 (ja) * 2009-09-16 2011-03-24 日立化成工業株式会社 印刷法用インク及びそれに用いられる金属ナノ粒子、並びに配線、回路基板、半導体パッケージ
US20120219703A1 (en) * 2009-10-26 2012-08-30 Industry-Academic Cooperation Foundation, Yonsei University Method for Manufacturing Conductive Metal Thin Film Using Carboxylic Acid
CN102713002A (zh) * 2010-01-28 2012-10-03 独立行政法人科学技术振兴机构 图案化导电膜的形成方法
WO2013018777A1 (ja) 2011-08-03 2013-02-07 日立化成工業株式会社 組成物セット、導電性基板及びその製造方法並びに導電性接着材組成物
JP2013175560A (ja) * 2012-02-24 2013-09-05 Hitachi Chemical Co Ltd 140℃以下で導体化して得られる金属銅膜、金属銅パターン及びそれらの製造方法
CN104475758A (zh) * 2009-09-16 2015-04-01 日立化成工业株式会社 液状组合物
US20150194235A1 (en) * 2012-09-26 2015-07-09 Fujifilm Corporation Method of manufacturing conductive film and composition for forming conductive film
KR20190039942A (ko) * 2016-08-04 2019-04-16 코프린트 테크놀로지스 리미티드 고전도성 구리 패턴을 생산하기 위한 제제 및 공정
WO2023119883A1 (ja) * 2021-12-24 2023-06-29 富士フイルム株式会社 検査装置、印刷システム、検査システム及びキュアシステム、基板の製造方法及びプログラム

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103210452B (zh) * 2010-11-16 2015-06-17 旭硝子株式会社 导电浆料及带导电膜的基材
TWI500050B (zh) * 2011-02-25 2015-09-11 Univ Nat Taiwan 導電薄膜的製法
JPWO2013021567A1 (ja) * 2011-08-11 2015-03-05 三洋電機株式会社 金属の接合方法および金属接合構造
TW201339279A (zh) * 2011-11-24 2013-10-01 Showa Denko Kk 導電圖型形成方法及藉由光照射或微波加熱的導電圖型形成用組成物
KR101353149B1 (ko) * 2011-12-27 2014-01-27 삼성전기주식회사 구리분말 제조방법
JP2013206722A (ja) * 2012-03-28 2013-10-07 Fujifilm Corp 液状組成物、金属銅膜、及び導体配線、並びに金属銅膜の製造方法
JP5275498B1 (ja) * 2012-07-03 2013-08-28 石原薬品株式会社 導電膜形成方法及び焼結進行剤
CN104620168B (zh) * 2013-04-05 2018-07-17 苏州诺菲纳米科技有限公司 带有融合金属纳米线的透明导电电极、它们的结构设计及其制造方法
JP5700864B2 (ja) * 2013-05-15 2015-04-15 石原ケミカル株式会社 銅微粒子分散液、導電膜形成方法及び回路基板
JP5993812B2 (ja) * 2013-07-10 2016-09-14 富士フイルム株式会社 導電膜の製造方法
JP2015026567A (ja) * 2013-07-29 2015-02-05 富士フイルム株式会社 導電膜形成用組成物及び導電膜の製造方法
WO2015152625A1 (ko) 2014-04-01 2015-10-08 전자부품연구원 광 소결용 잉크 조성물, 그를 이용한 배선기판 및 그의 제조 방법
JP6945120B2 (ja) 2014-08-29 2021-10-06 株式会社Flosfia 金属膜形成方法
DE102015200506A1 (de) * 2015-01-15 2016-07-21 Robert Bosch Gmbh Verfahren zur Herstellung einer bondbaren Metallisierung und korrespondierende bondbare Metallisierung
JP6967839B2 (ja) 2016-03-23 2021-11-17 日東電工株式会社 加熱接合用シート、ダイシングテープ付き加熱接合用シート、及び、接合体の製造方法、パワー半導体装置
JP6857166B2 (ja) * 2017-12-15 2021-04-14 Dowaエレクトロニクス株式会社 球状銀粉およびその製造方法
CN109797387B (zh) * 2019-01-24 2020-11-06 山东科技大学 金属表面纳米铜\微合金层自润滑耐磨蚀复合改性方法
JP6874785B2 (ja) * 2019-03-27 2021-05-19 三菱マテリアル株式会社 絶縁銅線および電気コイル
CN116655167B (zh) * 2023-06-21 2024-04-12 广东工业大学 一种处理含络合态铜废水的方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279531A (ja) * 1985-06-05 1986-12-10 Hitachi Ltd 銅と樹脂との接着方法
JPH07197266A (ja) * 1993-12-28 1995-08-01 Nippon Riironaale Kk 酸化銅(i)コロイドの金属化によるダイレクトプレーティング方法
JP2003203522A (ja) 2001-10-31 2003-07-18 Fujikura Kasei Co Ltd 銀化合物ペースト
JP2004225159A (ja) * 2003-01-22 2004-08-12 Texas Instruments Inc 導電性銅構造の形成方法
JP2004273205A (ja) 2003-03-06 2004-09-30 Harima Chem Inc 導電性ナノ粒子ペースト
JP3599950B2 (ja) 1997-04-16 2004-12-08 株式会社アルバック 金属ペーストの焼成方法
JP2005081501A (ja) 2003-09-09 2005-03-31 Ulvac Japan Ltd 金属ナノ粒子及びその製造方法、金属ナノ粒子分散液及びその製造方法、並びに金属細線及び金属膜及びその形成方法
JP2005272961A (ja) * 2004-03-25 2005-10-06 Fuji Photo Film Co Ltd 導電性パターン材料、金属微粒子パターン材料及びパターン形成方法
JP2006124814A (ja) * 2004-11-01 2006-05-18 Asahi Glass Co Ltd プリント配線板用金属箔の製造方法及びプリント配線板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176192A (ja) * 1985-01-31 1986-08-07 株式会社日立製作所 銅と樹脂との接着方法
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
JP3907151B2 (ja) 2000-01-25 2007-04-18 株式会社東芝 半導体装置の製造方法
WO2004103043A1 (ja) * 2003-05-16 2004-11-25 Harima Chemicals, Inc. 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法
US20070172691A1 (en) * 2004-02-04 2007-07-26 Yosi Shacham-Diamond Electroless coating methods for depositing silver-tungsten coatings, kits and products
KR20070111549A (ko) 2005-03-11 2007-11-21 히다치 가세고교 가부시끼가이샤 구리의 표면 처리 방법 및 구리

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279531A (ja) * 1985-06-05 1986-12-10 Hitachi Ltd 銅と樹脂との接着方法
JPH07197266A (ja) * 1993-12-28 1995-08-01 Nippon Riironaale Kk 酸化銅(i)コロイドの金属化によるダイレクトプレーティング方法
JP3599950B2 (ja) 1997-04-16 2004-12-08 株式会社アルバック 金属ペーストの焼成方法
JP2003203522A (ja) 2001-10-31 2003-07-18 Fujikura Kasei Co Ltd 銀化合物ペースト
JP2004225159A (ja) * 2003-01-22 2004-08-12 Texas Instruments Inc 導電性銅構造の形成方法
JP2004273205A (ja) 2003-03-06 2004-09-30 Harima Chem Inc 導電性ナノ粒子ペースト
JP2005081501A (ja) 2003-09-09 2005-03-31 Ulvac Japan Ltd 金属ナノ粒子及びその製造方法、金属ナノ粒子分散液及びその製造方法、並びに金属細線及び金属膜及びその形成方法
JP2005272961A (ja) * 2004-03-25 2005-10-06 Fuji Photo Film Co Ltd 導電性パターン材料、金属微粒子パターン材料及びパターン形成方法
JP2006124814A (ja) * 2004-11-01 2006-05-18 Asahi Glass Co Ltd プリント配線板用金属箔の製造方法及びプリント配線板

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2234119A4

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2479314A4 (en) * 2009-09-16 2017-08-02 Hitachi Chemical Company, Ltd. Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition
JP5903887B2 (ja) * 2009-09-16 2016-04-13 日立化成株式会社 印刷法用インクの製造方法
KR20120094157A (ko) * 2009-09-16 2012-08-23 히다치 가세고교 가부시끼가이샤 인쇄법용 잉크 및 그에 이용되는 금속 나노 입자, 및 배선, 회로 기판, 반도체 패키지
US9457406B2 (en) 2009-09-16 2016-10-04 Hitachi Chemical Company, Ltd. Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition
KR101633152B1 (ko) * 2009-09-16 2016-06-23 히타치가세이가부시끼가이샤 인쇄법용 잉크 및 그에 이용되는 금속 나노 입자, 및 배선, 회로 기판, 반도체 패키지
TWI494471B (zh) * 2009-09-16 2015-08-01 Hitachi Chemical Co Ltd 金屬銅膜及其製造方法、金屬銅圖案及使用其之導體配線、金屬銅凸塊、熱傳導路徑、接合材及液狀組成物
CN102549086A (zh) * 2009-09-16 2012-07-04 日立化成工业株式会社 印刷法用油墨以及用于该油墨的金属纳米粒子、以及布线、电路基板、半导体封装
WO2011034019A1 (ja) * 2009-09-16 2011-03-24 日立化成工業株式会社 印刷法用インク及びそれに用いられる金属ナノ粒子、並びに配線、回路基板、半導体パッケージ
JP5747821B2 (ja) * 2009-09-16 2015-07-15 日立化成株式会社 金属銅膜及びその製造方法、金属銅パターン及びそれを用いた導体配線、金属銅バンプ、熱伝導路、接合材、並びに液状組成物
CN104475758A (zh) * 2009-09-16 2015-04-01 日立化成工业株式会社 液状组合物
US9318233B2 (en) * 2009-10-26 2016-04-19 Hanwha Chemical Corporation Method for manufacturing conductive metal thin film using carboxylic acid
US20120219703A1 (en) * 2009-10-26 2012-08-30 Industry-Academic Cooperation Foundation, Yonsei University Method for Manufacturing Conductive Metal Thin Film Using Carboxylic Acid
US8828555B2 (en) 2010-01-28 2014-09-09 Japan Science And Technology Agency Method for forming patterned conductive film
CN102713002A (zh) * 2010-01-28 2012-10-03 独立行政法人科学技术振兴机构 图案化导电膜的形成方法
US9435032B2 (en) 2010-01-28 2016-09-06 Japan Science And Technology Agency Method for forming patterned conductive film
KR101970373B1 (ko) * 2011-08-03 2019-04-18 히타치가세이가부시끼가이샤 조성물 세트, 도전성 기판 및 그 제조 방법 및 도전성 접착재 조성물
KR20140046012A (ko) * 2011-08-03 2014-04-17 히타치가세이가부시끼가이샤 조성물 세트, 도전성 기판 및 그 제조 방법 및 도전성 접착재 조성물
WO2013018777A1 (ja) 2011-08-03 2013-02-07 日立化成工業株式会社 組成物セット、導電性基板及びその製造方法並びに導電性接着材組成物
JP2013175560A (ja) * 2012-02-24 2013-09-05 Hitachi Chemical Co Ltd 140℃以下で導体化して得られる金属銅膜、金属銅パターン及びそれらの製造方法
US20150194235A1 (en) * 2012-09-26 2015-07-09 Fujifilm Corporation Method of manufacturing conductive film and composition for forming conductive film
KR20190039942A (ko) * 2016-08-04 2019-04-16 코프린트 테크놀로지스 리미티드 고전도성 구리 패턴을 생산하기 위한 제제 및 공정
JP2019529587A (ja) * 2016-08-04 2019-10-17 コププリント テクノロジーズ リミテッドCopprint Technologies Ltd 高導電性銅パターンを製造するための調合物および方法
KR102397518B1 (ko) 2016-08-04 2022-05-13 코프린트 테크놀로지스 리미티드 고전도성 구리 패턴을 생산하기 위한 제제 및 공정
WO2023119883A1 (ja) * 2021-12-24 2023-06-29 富士フイルム株式会社 検査装置、印刷システム、検査システム及びキュアシステム、基板の製造方法及びプログラム

Also Published As

Publication number Publication date
JPWO2009078448A1 (ja) 2011-04-28
US20120125659A1 (en) 2012-05-24
KR101247431B1 (ko) 2013-03-26
TW200940743A (en) 2009-10-01
CN101903959A (zh) 2010-12-01
TWI399457B (zh) 2013-06-21
US8801971B2 (en) 2014-08-12
EP2234119A4 (en) 2015-04-15
KR20100084698A (ko) 2010-07-27
JP5163655B2 (ja) 2013-03-13
EP2234119A1 (en) 2010-09-29
CN101903959B (zh) 2013-01-23

Similar Documents

Publication Publication Date Title
WO2009078448A1 (ja) 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液
CN103429012B (zh) 一种pcb板上的背钻孔的制备方法以及pcb板
TW200731898A (en) Circuit board structure and method for fabricating the same
EP1633175A4 (en) INSULATION INTERIOR FOR PRINTED CONNECTION CARD, PRINTED CONNECTION CARD, AND METHOD OF MANUFACTURING THE SAME
TW200520110A (en) Printed wiring board, its preparation and circuit device
WO2007027558A3 (en) Method of forming pitch multipled contacts
TW200634983A (en) Method of forming a plug
BR0114155A (pt) Banho e método de deposição sem eletricidade de prata em superfìcies metálicas
WO2006098820A3 (en) Method of forming a semiconductor device having a diffusion barrier stack and structure thereof
US20020117400A1 (en) Process for producing printed wiring board
WO2010065301A3 (en) Method of enabling selective area plating on a substrate
TWI256684B (en) Method of fabricate interconnect structures
EP1619719A3 (en) Method of manufacturing a wiring board including electroplating
TW200610463A (en) Circuit board and method of manufacturing the same
CN103108500B (zh) 一种制作分段式金手指的方法
TW200737455A (en) Method for fabricating a metal protecting layer on electrically connecting pad of circuit board
JP2006005176A5 (ja)
WO2009153129A3 (de) Verfahren zur herstellung einer elektronischen baugruppe
WO2007128015A3 (de) Verfahren zur herstellung wenigstens eines leitfähigen elements einer leiterplatte sowie leiterplatte und verwendung eines derartigen verfahrens
TW200802766A (en) Substrate strip and substrate structure and method for manufacturing the same
MY160142A (en) Copper conductor film and manufacturing method thereof, conductive substrate and manufacturing method thereof, copper conductor wiring and manufacturing method thereof and treatment solution
TW200739769A (en) Method of manufacturing wiring board
KR20140108770A (ko) 레이저와 인쇄방식이 하이브리드된 플렉서블 기판 및 이의 제조 방법
JP2003264159A5 (ja)
TW200623983A (en) Method for cutting printed circuit board

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880121523.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08861192

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009546290

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12808768

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107013643

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008861192

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: PI 2010002850

Country of ref document: MY