WO2009013967A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009013967A1
WO2009013967A1 PCT/JP2008/061492 JP2008061492W WO2009013967A1 WO 2009013967 A1 WO2009013967 A1 WO 2009013967A1 JP 2008061492 W JP2008061492 W JP 2008061492W WO 2009013967 A1 WO2009013967 A1 WO 2009013967A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
trench
semiconductor region
semiconductor
termination
Prior art date
Application number
PCT/JP2008/061492
Other languages
English (en)
French (fr)
Inventor
Masayuki Hanaoka
Original Assignee
Sanken Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co., Ltd. filed Critical Sanken Electric Co., Ltd.
Priority to CN2008800218004A priority Critical patent/CN101689560B/zh
Priority to US12/670,413 priority patent/US8212313B2/en
Publication of WO2009013967A1 publication Critical patent/WO2009013967A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Thyristors (AREA)

Abstract

　接合終端領域における電界を緩和し、高耐圧化可能な半導体装置を提供する。 　素子領域（５１）と、接合終端領域（５２）とを有し、素子領域は、第１導電型の第１半導体領域（２）と、第２導電型の第２半導体領域（４）と、第１導電型の第３半導体領域（１０）と、第２半導体領域および第３半導体領域を貫通し、底面が第１半導体領域（２）に達するトレンチ（３５）と、トレンチの側面および底面に形成されたゲート絶縁膜（１２）と、トレンチに埋め込まれたゲート電極（８）とを備え、接合終端領域は、素子領域を取り囲むように上面から深さ方向に形成された終端トレンチ（５５）と、終端トレンチの側壁および底面に形成されたゲート絶縁膜（１２）と、終端トレンチ（５５）に埋め込まれたゲート電極（８）とを備え、第２半導体領域（４）の上面から終端トレンチ（５５）の底面までの深さが第２半導体領域の厚みの０．９～２．０倍である。
PCT/JP2008/061492 2007-07-24 2008-06-24 半導体装置 WO2009013967A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800218004A CN101689560B (zh) 2007-07-24 2008-06-24 半导体装置
US12/670,413 US8212313B2 (en) 2007-07-24 2008-06-24 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-192161 2007-07-24
JP2007192161A JP5315638B2 (ja) 2007-07-24 2007-07-24 半導体装置

Publications (1)

Publication Number Publication Date
WO2009013967A1 true WO2009013967A1 (ja) 2009-01-29

Family

ID=40281226

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061492 WO2009013967A1 (ja) 2007-07-24 2008-06-24 半導体装置

Country Status (4)

Country Link
US (1) US8212313B2 (ja)
JP (1) JP5315638B2 (ja)
CN (1) CN101689560B (ja)
WO (1) WO2009013967A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011024842A1 (ja) * 2009-08-28 2011-03-03 サンケン電気株式会社 半導体装置
JP2013033931A (ja) * 2011-06-08 2013-02-14 Rohm Co Ltd 半導体装置およびその製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5452195B2 (ja) 2009-12-03 2014-03-26 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置
CN102130150A (zh) * 2010-12-13 2011-07-20 成都方舟微电子有限公司 半导体器件结终端结构
CN102569388B (zh) * 2010-12-23 2014-09-10 无锡华润上华半导体有限公司 半导体器件及其制造方法
US8754472B2 (en) * 2011-03-10 2014-06-17 O2Micro, Inc. Methods for fabricating transistors including one or more circular trenches
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
CN104040720B (zh) 2012-01-12 2016-12-14 丰田自动车株式会社 半导体装置及其制造方法
CN103280452A (zh) * 2013-05-13 2013-09-04 成都瑞芯电子有限公司 量子场分布的Trench MOSFET沟槽终端结构及制造方法
JP2016225477A (ja) * 2015-05-29 2016-12-28 サンケン電気株式会社 半導体装置
JP6566835B2 (ja) * 2015-10-22 2019-08-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6739372B2 (ja) 2017-02-21 2020-08-12 株式会社東芝 半導体装置
JP6946824B2 (ja) * 2017-07-28 2021-10-06 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6791084B2 (ja) 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置
US11081554B2 (en) * 2017-10-12 2021-08-03 Semiconductor Components Industries, Llc Insulated gate semiconductor device having trench termination structure and method
US10600897B2 (en) * 2017-11-08 2020-03-24 Fuji Electric Co., Ltd. Semiconductor device
KR102472577B1 (ko) * 2018-12-14 2022-11-29 산켄덴키 가부시키가이샤 반도체 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187698A (ja) * 1997-09-02 1999-03-30 Kansai Electric Power Co Inc:The 高耐圧半導体装置及びこの装置を用いた電力変換器
JP2003515915A (ja) * 1999-01-11 2003-05-07 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン パワーｍｏｓ素子及びｍｏｓ素子の製造方法
JP2005032941A (ja) * 2003-07-11 2005-02-03 Fuji Electric Device Technology Co Ltd 絶縁ゲート型半導体装置
JP2005209807A (ja) * 2004-01-21 2005-08-04 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283754A (ja) 1996-04-16 1997-10-31 Toshiba Corp 高耐圧半導体装置
US6693011B2 (en) 2001-10-02 2004-02-17 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power MOS element and method for producing the same
JP3689419B1 (ja) * 2004-03-29 2005-08-31 新電元工業株式会社 半導体装置、半導体装置の製造方法
JP4721653B2 (ja) * 2004-05-12 2011-07-13 トヨタ自動車株式会社 絶縁ゲート型半導体装置
JP2007123570A (ja) * 2005-10-28 2007-05-17 Toyota Industries Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187698A (ja) * 1997-09-02 1999-03-30 Kansai Electric Power Co Inc:The 高耐圧半導体装置及びこの装置を用いた電力変換器
JP2003515915A (ja) * 1999-01-11 2003-05-07 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン パワーｍｏｓ素子及びｍｏｓ素子の製造方法
JP2005032941A (ja) * 2003-07-11 2005-02-03 Fuji Electric Device Technology Co Ltd 絶縁ゲート型半導体装置
JP2005209807A (ja) * 2004-01-21 2005-08-04 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011024842A1 (ja) * 2009-08-28 2011-03-03 サンケン電気株式会社 半導体装置
JP5609876B2 (ja) * 2009-08-28 2014-10-22 サンケン電気株式会社 半導体装置
US8969954B2 (en) 2009-08-28 2015-03-03 Sanken Electric Co., Ltd. Semiconductor device having plurality of peripheral trenches in peripheral region around cell region
JP2013033931A (ja) * 2011-06-08 2013-02-14 Rohm Co Ltd 半導体装置およびその製造方法
US9576841B2 (en) 2011-06-08 2017-02-21 Rohm Co., Ltd. Semiconductor device and manufacturing method

Also Published As

Publication number Publication date
US20100187603A1 (en) 2010-07-29
CN101689560B (zh) 2011-08-17
US8212313B2 (en) 2012-07-03
JP2009032728A (ja) 2009-02-12
CN101689560A (zh) 2010-03-31
JP5315638B2 (ja) 2013-10-16

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