WO2008136337A1 - スパッタリング装置及びスパッタリング方法 - Google Patents

スパッタリング装置及びスパッタリング方法 Download PDF

Info

Publication number
WO2008136337A1
WO2008136337A1 PCT/JP2008/057894 JP2008057894W WO2008136337A1 WO 2008136337 A1 WO2008136337 A1 WO 2008136337A1 JP 2008057894 W JP2008057894 W JP 2008057894W WO 2008136337 A1 WO2008136337 A1 WO 2008136337A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
targets
gas
parallel
introducing
Prior art date
Application number
PCT/JP2008/057894
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tatsunori Isobe
Yasuhiko Akamatsu
Takaomi Kurata
Makoto Arai
Takashi Komatsu
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020097021361A priority Critical patent/KR101050121B1/ko
Priority to CN2008800118311A priority patent/CN101657562B/zh
Publication of WO2008136337A1 publication Critical patent/WO2008136337A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2008/057894 2007-05-01 2008-04-24 スパッタリング装置及びスパッタリング方法 WO2008136337A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097021361A KR101050121B1 (ko) 2007-05-01 2008-04-24 스퍼터링 장치 및 스퍼터링 방법
CN2008800118311A CN101657562B (zh) 2007-05-01 2008-04-24 溅镀装置及溅镀方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-120708 2007-05-01
JP2007120708A JP4707693B2 (ja) 2007-05-01 2007-05-01 スパッタリング装置及びスパッタリング方法

Publications (1)

Publication Number Publication Date
WO2008136337A1 true WO2008136337A1 (ja) 2008-11-13

Family

ID=39943448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057894 WO2008136337A1 (ja) 2007-05-01 2008-04-24 スパッタリング装置及びスパッタリング方法

Country Status (5)

Country Link
JP (1) JP4707693B2 (enrdf_load_stackoverflow)
KR (1) KR101050121B1 (enrdf_load_stackoverflow)
CN (1) CN101657562B (enrdf_load_stackoverflow)
TW (1) TWI433949B (enrdf_load_stackoverflow)
WO (1) WO2008136337A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5975653B2 (ja) * 2011-01-25 2016-08-23 Hoya株式会社 マスクブランク製造用スパッタリング装置及び表示装置用マスクブランクの製造方法並びに表示装置用マスクの製造方法
KR20130099194A (ko) * 2011-04-12 2013-09-05 가부시키가이샤 아루박 타겟 및 타겟의 제조 방법
KR20120130518A (ko) * 2011-05-23 2012-12-03 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
JP5875462B2 (ja) * 2012-05-21 2016-03-02 株式会社アルバック スパッタリング方法
AT513190B9 (de) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
JP6196078B2 (ja) * 2012-10-18 2017-09-13 株式会社アルバック 成膜装置
JP6251588B2 (ja) * 2014-02-04 2017-12-20 株式会社アルバック 成膜方法
CN106103787B (zh) * 2014-03-18 2019-06-28 应用材料公司 用于静态反应溅射的工艺气体分段
KR102376098B1 (ko) * 2018-03-16 2022-03-18 가부시키가이샤 알박 성막 방법
KR102395512B1 (ko) 2020-07-16 2022-05-09 제이엔티(주) 자체 안전제동 전동기 구동 노약자 보행보조장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193870A (ja) * 1989-12-25 1991-08-23 Matsushita Electric Ind Co Ltd 低ガス圧力スパッタリング装置
JPH05239634A (ja) * 1991-12-11 1993-09-17 Leybold Ag 陰極スパッタリング装置
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2443972Y (zh) * 2000-08-18 2001-08-22 深圳威士达真空系统工程有限公司 中频反应溅射镀膜设备中反应气体的供气装置
JP4580781B2 (ja) * 2004-03-19 2010-11-17 株式会社アルバック スパッタリング方法及びその装置
JP4922581B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193870A (ja) * 1989-12-25 1991-08-23 Matsushita Electric Ind Co Ltd 低ガス圧力スパッタリング装置
JPH05239634A (ja) * 1991-12-11 1993-09-17 Leybold Ag 陰極スパッタリング装置
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置

Also Published As

Publication number Publication date
TWI433949B (zh) 2014-04-11
JP2008274366A (ja) 2008-11-13
CN101657562A (zh) 2010-02-24
JP4707693B2 (ja) 2011-06-22
CN101657562B (zh) 2011-05-11
KR20090122383A (ko) 2009-11-27
TW200920868A (en) 2009-05-16
KR101050121B1 (ko) 2011-07-19

Similar Documents

Publication Publication Date Title
WO2008136337A1 (ja) スパッタリング装置及びスパッタリング方法
WO2009028552A1 (ja) スパッタリング装置
WO2010123877A3 (en) Cvd apparatus for improved film thickness non-uniformity and particle performance
EP2113310B1 (en) Film depositing apparatus
WO2013016191A3 (en) Methods and apparatus for the deposition of materials on a substrate
CN201648512U (zh) 连续真空镀膜装置
MY182033A (en) Plasma cvd apparatus, plasma cvd method, reactive sputtering apparatus, and reactive sputtering method
WO2012136876A8 (en) Atomic layer deposition with plasma source
GB201121034D0 (en) Apparatus and method for depositing a layer onto a substrate
WO2007118204A3 (en) Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
WO2009117565A3 (en) Method and apparatus of a substrate etching system and process
WO2010128811A3 (ko) 박막 증착 장치 및 이를 구비하는 박막 증착 시스템
JP2010541242A5 (enrdf_load_stackoverflow)
WO2004105095A3 (en) Thin-film deposition evaporator
WO2010101756A3 (en) Web substrate deposition system
WO2009006151A3 (en) Arrays of inductive elements for minimizing radial non-uniformity in plasma
WO2009072426A1 (ja) 真空処理装置及び基板処理方法
WO2009014394A3 (en) Method for depositing ceramic thin film by sputtering using non-conductive target
WO2012096466A3 (ko) 박막 증착 장치 및 이를 포함한 기판 처리 시스템
TW200720456A (en) Large-area magnetron sputtering chamber with individually controlled sputtering zones
TW200634170A (en) Pressure control system in a photovoltaic substrate deposition apparatus
SG165295A1 (en) Electron beam vapor deposition apparatus for depositing multi-layer coating
WO2011034751A3 (en) Hot wire chemical vapor deposition (cvd) inline coating tool
WO2012145702A3 (en) Lithium sputter targets
TW200600595A (en) Evaporation device

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880011831.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08740821

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097021361

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08740821

Country of ref document: EP

Kind code of ref document: A1