CN101657562B - 溅镀装置及溅镀方法 - Google Patents

溅镀装置及溅镀方法 Download PDF

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Publication number
CN101657562B
CN101657562B CN2008800118311A CN200880011831A CN101657562B CN 101657562 B CN101657562 B CN 101657562B CN 2008800118311 A CN2008800118311 A CN 2008800118311A CN 200880011831 A CN200880011831 A CN 200880011831A CN 101657562 B CN101657562 B CN 101657562B
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China
Prior art keywords
negative electrode
target
electrode target
parallel
gas
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Chinese (zh)
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CN101657562A (zh
Inventor
矶部辰德
赤松泰彦
仓田敬臣
新井真
小松孝
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN2008800118311A 2007-05-01 2008-04-24 溅镀装置及溅镀方法 Active CN101657562B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007120708A JP4707693B2 (ja) 2007-05-01 2007-05-01 スパッタリング装置及びスパッタリング方法
JP120708/2007 2007-05-01
PCT/JP2008/057894 WO2008136337A1 (ja) 2007-05-01 2008-04-24 スパッタリング装置及びスパッタリング方法

Publications (2)

Publication Number Publication Date
CN101657562A CN101657562A (zh) 2010-02-24
CN101657562B true CN101657562B (zh) 2011-05-11

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Family Applications (1)

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CN2008800118311A Active CN101657562B (zh) 2007-05-01 2008-04-24 溅镀装置及溅镀方法

Country Status (5)

Country Link
JP (1) JP4707693B2 (enrdf_load_stackoverflow)
KR (1) KR101050121B1 (enrdf_load_stackoverflow)
CN (1) CN101657562B (enrdf_load_stackoverflow)
TW (1) TWI433949B (enrdf_load_stackoverflow)
WO (1) WO2008136337A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5975653B2 (ja) * 2011-01-25 2016-08-23 Hoya株式会社 マスクブランク製造用スパッタリング装置及び表示装置用マスクブランクの製造方法並びに表示装置用マスクの製造方法
KR20130099194A (ko) * 2011-04-12 2013-09-05 가부시키가이샤 아루박 타겟 및 타겟의 제조 방법
KR20120130518A (ko) * 2011-05-23 2012-12-03 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
JP5875462B2 (ja) * 2012-05-21 2016-03-02 株式会社アルバック スパッタリング方法
AT513190B9 (de) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
JP6196078B2 (ja) * 2012-10-18 2017-09-13 株式会社アルバック 成膜装置
JP6251588B2 (ja) * 2014-02-04 2017-12-20 株式会社アルバック 成膜方法
CN106103787B (zh) * 2014-03-18 2019-06-28 应用材料公司 用于静态反应溅射的工艺气体分段
KR102376098B1 (ko) * 2018-03-16 2022-03-18 가부시키가이샤 알박 성막 방법
KR102395512B1 (ko) 2020-07-16 2022-05-09 제이엔티(주) 자체 안전제동 전동기 구동 노약자 보행보조장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2443972Y (zh) * 2000-08-18 2001-08-22 深圳威士达真空系统工程有限公司 中频反应溅射镀膜设备中反应气体的供气装置
CN1670243A (zh) * 2004-03-19 2005-09-21 株式会社爱发科 溅射方法及其装置
CN1904132A (zh) * 2005-07-29 2007-01-31 株式会社爱发科 溅射装置和溅射方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193870A (ja) * 1989-12-25 1991-08-23 Matsushita Electric Ind Co Ltd 低ガス圧力スパッタリング装置
DE4140862A1 (de) * 1991-12-11 1993-06-17 Leybold Ag Kathodenzerstaeubungsanlage
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2443972Y (zh) * 2000-08-18 2001-08-22 深圳威士达真空系统工程有限公司 中频反应溅射镀膜设备中反应气体的供气装置
CN1670243A (zh) * 2004-03-19 2005-09-21 株式会社爱发科 溅射方法及其装置
CN1904132A (zh) * 2005-07-29 2007-01-31 株式会社爱发科 溅射装置和溅射方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2005-290550A 2005.10.20
JP特开平5-239634A 1993.09.17

Also Published As

Publication number Publication date
TWI433949B (zh) 2014-04-11
WO2008136337A1 (ja) 2008-11-13
JP2008274366A (ja) 2008-11-13
CN101657562A (zh) 2010-02-24
JP4707693B2 (ja) 2011-06-22
KR20090122383A (ko) 2009-11-27
TW200920868A (en) 2009-05-16
KR101050121B1 (ko) 2011-07-19

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