200920868 九、發明說明 【發明所屬之技術領域】 本發明是關於處理基板表面指定薄膜形成用的濺鍍裝 置及濺鍍方法。 【先前技術】 磁控管濺鍍方式的濺鍍裝置，是在標靶後方（和標靶 面成背向的側）配置著設有複數磁鐵成交叉磁性的磁鐵組 合體，利用該磁鐵組合體在標靶前方（濺射面側）形成隧 道狀的磁通，捕捉標靶前方電離的電子及濺鍍產生的二次 電子，以提高標靶前方的電子密度，讓該等電子和導入在 真空室內的稀有氣體的氣體分子的衝突槪率提高就能夠提 高等離子密度。因此，該磁控管濺鍍方式的濺鑛裝置具有 可提昇成膜速度等優點，廣泛地被利用在處理基板表面要 形成有指定薄膜的成膜處理，近年來，對於如FPD製造用 玻璃基板般面積大的處理基板也是大多數利用該磁控管濺 銨方式的濺鍍裝置進行成膜處理。 可對大面積處理基板有效成膜的濺鍍裝置，已知有將 複數片標靶在真空室內排列設置成和處理基板相向，針對 排列設置的標靶當中成對的標靶以指定頻率改變成交叉極 性設置電壓外加用的交流電源，藉由將各標靶交替轉換成 陽電極、陰電極，以在陽電極及陰電極間產生輝光放電形 成等離子周圍環境，對各標靶進行濺鍍（專利文獻η 。 在使用上述濺鍍裝置於處理基板表面形成指定薄膜時 -5- 200920868 ’不但要讓處理基板全面能夠有均勻的膜厚，在與濺射氣 體一起導入氧氣、氮氣等反應氣體進行反應性濺鍍時，還 要能夠防止反應氣體偏向導入濺渡室造成處理基板面內產 生不均勻反應導致處理基板面內比抗等膜質不均。因此， 已知有在排列設置的各標靶彼此間的各間隙，沿著標靶長 度側面設有濺射氣體或反應氣體導入用的氣體導管，由氣 體導管從各標靶彼此間的各間隙朝處理基板噴出氣體的技 術（專利文獻2 )。 〔專利文獻1〕日本特開2 0 0 5 - 2 9 0 5 5 0號公報（例如 參照申請專利範圍的記載） 〔專利文獻2〕日本特開2 0 0 4 - 9 1 9 2 7 (例如參照第1 圖及第4圖） 【發明內容】 〔發明欲解決之課題〕 然而，將複數片標靶排列設置成和處理基板相向所構 成的濺鍍裝置，在濺鍍時從各標靶彼此間的間隙不會放出 濺射粒子。因此，若要獲得遍及處理基板表面全面成均勻 的膜厚分佈’最好是盡可能縮小不會放出濺射粒子的空間 。於是’如上述’需在標靶彼此間的間隙沿著其長度側面 設置氣體導管，但儘管如此不會放出濺射粒子的空間縮小 程度還是有限。此外，在該小空間配置指定外徑的氣體導 管實屬困難，反而導致裝置構成複雜其組裝作業變困難。 於是’本發明的第一課題是有鑑於上述各問題點，提 -6- 200920868 供一種簡單構造又容易配置氣體導管，再加上能夠遍及處 理基板全面讓膜厚分佈或比抗等膜質形成大致均勻的濺鍍 裝置。此外’本發明的第二課題是提供一種在使用反應性 濺鍍於處理基板表面形成指定薄膜時，能夠遍及處理基板 全面讓膜厚分佈或比抗等膜質形成大致均勻的濺鍍方法。 〔用以解決課題之手段〕 爲解決上述課題，申請專利範圍第1項所記載的濺鍍 裝置，其特徵爲，具備：於濺鍍室內設隔著指定間隔形成 排列設置的複數標靶；可對各標靶投入電力的濺射電源； 及可對各濺鍍室導入濺射氣體及反應氣體的氣體導入手段 ，上述反應氣體導入濺鍍室用的氣體導入手段，具有朝各 標靶排列設置方向延伸的至少1支氣體導管，該氣體導管 ，在排列設置的各標靶背面側配置成離開各標靶的同時， 具有朝標靶噴射反應氣體的噴射口。 根據本發明時，朝各標靶排列設置方向延伸的至少1 支氣體導管是配置成離開各標靶，因此從形成在氣體導管 的噴射口噴射反應氣體時，該反應氣體會一旦擴散在排列 設置的各標靶背面側的空間，接著通過標靶彼此間的各間 隙朝處理基板供應。如此一來，以簡單的構成就能夠防止 反應氣體形成偏向導入處理基板，能夠防止處理基板內產 生反應性不均造成的處理基板內比抗等膜質不均。 此外，將氣體導管配置在各標靶後方，能夠讓不會放 出濺射粒子的各標靶彼此間的空間盡可能縮小，能夠讓薄 200920868 膜遍及處理基板全面形成均勻膜厚分佈。再加上’本發明 濺鍍裝置和在標靶彼此間的各間隙沿著其長度側面設有導 管的濺鍍裝置相比裝置構成較簡單，此外只要沿著各標靶 排列設置方向配置氣體導管即可，因此其組裝作業容易。 上述濺射電源是做爲可針對排列設置的複數標靶當中 的每一對標靶以指定頻率改變成交叉極性施加電壓的交流 電源，只要構成可將各標靶交替轉換成陽電極、陰電極， 在陽電極及陰電極間產生輝光放電形成等離子周圍環境， 對各標靶進行濺鍍，則各標靶彼此間的空間不需設置陽極 、密封件等任何的構成構件，因此不會放出濺射粒子的各 標靶彼此間的空間可盡可能地縮小。 另外，最好是在上述排列設置的標靶和氣體導管之間 ’設有可在各標靶前方形成隧道狀磁通的磁鐵組合體。 於該狀況下，爲了提高標靶使用效率，最好具備有可 胃上述磁鐵組合體驅動成沿著標靶背面平行往返動作的驅 動手段。 此外，爲解決上述課題，申請專利範圍第5項所記載 的濺鍍方法，是一種在濺鍍室內將標靶配置成和處理基板 牛目向’並且，可針對隔著指定間隔排列設置的複數片標靶 當中的每一對標靶以指定頻率改變成交叉極性施加交流電 壓’一邊導入標靶一邊將各標靶交替轉換成陽電極、陰電 極’在陽電極及陰電極間產生輝光放電形成等離子周圍環 境’對各標靶進行濺鍍的同時，導入反應氣體，藉此在處 理基板表面形成指定薄膜的濺鍍方法，其特徵爲，可將上 -8- 200920868 述氣體一旦擴散在標靶背面側空間後通過各標靶彼此間的 間隙供應處理基板。 〔發明效果〕 如以上說明，本發明的濺鍍裝置是可達到簡單構造， 氣體導管組裝作業容易，再加上能夠遍及處理基板全面讓 膜厚分佈或比抗等膜質形成大致均勻的效果。此外，本發 明的濺鍍方法，由於可讓反應氣體不致偏向導入處理基板 ，因此可達到能夠遍及處理基板全面讓膜厚分佈或比抗等 膜質形成大致均勻的效果。 【實施方式】 〔發明之最佳實施形態〕 參照第1圖進行說明時，圖號1是表示本發明的磁控 管方式濺鍍裝置（以下稱「濺鍍裝置」）。濺鍍裝置1是 線內式濺鍍裝置，具有可透過旋轉泵浦、渦輪泵浦等真空 排氣手段（未圖示）保持成指定真空度的真空室11，構成 濺鍍室。真空室1 1的上部設有基板搬運手段2，該基板搬 運手段2具有習知構造，例如具有處理基板S裝載用的運 載板2 1，由驅動手段間歇性驅動，能夠將處理基板s依 順序搬運至和下述標靶成相向的位置。真空室1 1的下側 ’配置著陰電極c。 本實施形態相關的陰電極c ’具有相對於處理基板S 相向配置的4片標靶3 1 a、3 1 b、3 1 c、3 1 d。各標靶3丨a、 -9 - 200920868 31b、31c、31d是Al、Ti、Mo或ITO等根據欲成膜在處 理基板S上的薄膜組成以習知方法製成，例如是形成爲大 致長方體（從上面看爲長方形）。各標IE 3la、31b、31c 、31d，濺鑛中，是透過銦或錫等接合材結合在標祀31a、 31b、31c、31d冷卻用的支撐板32，以可在真空室n內 成爲浮動的狀態隔著未圖耶絕緣材安裝在陰電極C的框架 〇 標靶31a、31b、31c、31d，配置有：可使其未使用時 的職射面3 1 0排列設置成位於和處理基板S平行的同一平 面上，包圍著其周圍的第1接地密封件3 3 a ;及位於第1 接地密封件3 3 a及基板搬運手段2之間可防止濺射粒子等 附著在真空室1 1內壁或運載板2 1的第2接地密封件3 3 a 。各標靶3 1 a、3 1 b、3 1 c、3 1 d的彼此相向的側面3 1 1彼 此間，並不設置任何陽極或密封件等構成零件。如此一來 ，濺鍍時就能夠讓不會放出濺射粒子的空間盡可能縮小。 各標靶3 1 a、3 1 b、3 1 c、3 1 d的外觀尺寸是設定成各標靶 3 1 a、3 1 b、3 1 c、3 1 d形成排列設置時不會大於處理基板S 的外觀尺寸。 此外，陰電極C，具有分別位於標靶3 1 a、3 1 b、3 1 c 、3 1 d背面側（濺射面3 1 0的相反側，第1圖中爲下側） 的磁鐵組合體4。同一構造的磁鐵組合體4，具有設置成 平行於各標靶3 1 a、3 1 b、3 1 c ' 3 1 d的支撐板4 1。該支撐 板4 1是由比各標靶3 1 a、3 1 b、3 1 c、3 1 d的橫向寬度小， 形成沿著標靶3 1 a、3 1 b、3 1 c、3 1 d長度方向延伸至其兩 -10- 200920868 側的長方形平板構成，以可增加磁鐵吸附力的磁性材 成。支撐板41上，設有：在其中央部配置成棒狀的 磁鐵42 ;及沿著支撐板4 1外圍形成配置的周邊磁鐵 於該狀況時，將中央磁鐵42換算成同磁化時的體積 成例如和周邊磁鐵43換算成同磁化時的體積和相等 邊磁鐵：中央磁鐵：周邊磁鐵=1 : 2 : 1 )。 如此一來，在各標靶 31a、31b、31c、31d的前 濺射面3 1 0側）就會分別形成有均衡的閉環隧道狀磁 藉由捕捉標靶 31a、31b、31c、31d前方電離的電子 鍍產生的二次電子是能夠提高標靶3 1 a、3 1 b、3 1 c -各前方的電子密度使等離子密度變高。 各磁鐵組合體4是分別連結於馬達或氣壓缸等所 的驅動手段5的驅動軸5 1，形成爲能夠一體以平行並 速往返動作在沿著標靶3 1 a、3 1 b、3 1 c、3 1 d排列設 向的2處位置之間。如此一來，就可獲得遍及各標靶 、3 1 b、3 1 c、3 1 d全面的均等侵蝕區域。此外，各 3 1 a、3 1 b、3 1 c、3 1 d當中彼此相鄰接的2個標靶是成 對，成對的各標靶3 1 a、3 1 b或3 1 c、3 1 d，連接有來 交流電源El、E2的輸出電纜ΚΙ、K2。接著，透過交 源El、E2，以指定頻率（1〜400KHZ )交替改變極性 對標靶31a、31b或31c、31d施有電壓。 交流電源E1、E2，具有習知構造，例如是由： 電力的供應成爲可能的電力供應部；及能以指定頻率 改變極性將電壓輸出至各標靶3 1 a、3 1 b或3 1 c、3 1 d 料製 中央 43 〇 設計 (周 方（ 通， 及濺 3 1 d 構成 且等 置方 3 1a 標靶 爲一· 自於 流電 讓一· 可讓 交替 的振 -11 - 200920868 盪部所構成。來自於交流電源E1、E2的輸出電壓的波形 ，大致爲正弦波’但並不限於此’例如也可以是大致方形 波。 此外，真空室1 1設有Ar等稀有氣體形成的濺射氣體 導入用的氣體導入手段6a。氣體導入手段6a具有安裝在 真空室11側壁的氣體導管61a ’氣體導管61a是透過質量 流控制器62 a連通於氣體源6 3 a。經由氣體導管6 1 a導入 至真空室1 1內的濺射氣體，通過第1及第2接地密封件 3 3a、3 3b兩者間及第2接地密封件33b和基板搬運手段2 之間的間隙供應至標靶3 1 a、3 1 b、3 1 c、3 1 d前方的空間 〇 接著，由基板搬運手段2將處理基板S搬運至和一對 標靶3 1 a、3 1 b、3 1 c、3 1 d成相向的位置，如上述導入濺 射氣體，透過交流電源E 1、E2分別對一對標靶3 1 a、3 1 b 及3 1 c、3 1 d施加交流電壓，將各標靶 3 1 a、3 1 b、3 1 c、 31d交替轉換成陽電極、陰電極，以在陽電極及陰電極間 產生輝光放電形成等離子周圍環境。如此一來，等離子周 圍環境中的離子會加速朝向成爲陰電極一方的標靶31a、 3 1 b、3 1 c、3 1 d衝擊，導致標靶原子飛散附著、堆積在處 理基板S表面使處理基板S表面形成有指定薄膜。 另一方面，在使用上述濺鍍裝置1進行反應性濺鍍時 ，在導入濺射氣體的同時導入氧或氮等反應氣體，但若是 讓反應氣體偏向導入真空室1 1，則處理基板S面內會產 生反應性不均，因此有必要防止處理基板S面內比抗等膜 -12- 200920868 質不均。 本實施形態中，是將1支氣體導管61 b設置成離開各 標靶3 1 a、3 1 b、3 1 c、3 1 d，設置在成排列設置的各磁鐵組 合體4的背面側朝各標靶3 1 a、3 1 b、3 1 c、3 1 d的排列設 置方向通過各標靶中心形成延伸’將該氣體導管61b的一 端透過質量流控制器62b連接於氧等反應氣體的氣體源 63b，藉此構成反應氣體用的氣體導入手段6b。 氣體導管61b，例如是具有Φ5〜l〇mm的不銹鋼管， 長度尺寸是設定成比排列設置的標靶3 1 a、3 1 b、3 1 c、3 1 d 全寬還長或同等，於其面向標靶側的片’形成有隔著指定 間隔的3個噴射口 6 1 0。如此一來’當從形成在氣體導管 61b的噴射口 610噴射反應氣體時’反應氣體會一旦擴散 在各標靶3 1 a、3 1 b、3 1 c、3 1 d背面側的空間’接著，通 過排列設置的標靶3 1 a、3 1 b、3 1 c、3 1 d彼此間的各間隙 朝處理基板S供應。 噴射口 6 1 0的開孔位置或其數量及標靶3 1 a、3 1 b、 31c、31d和氣體導管61b的距離，只要構成爲在經由質量 流控制器62b控制流量的反應氣體從噴射口 6 1 0噴出時’ 可讓反應氣體一旦擴散在各標靶3 1 a、3 1 b、3 1 c、3 1 d背 面側的空間，則並無特別限定，但以標靶彼此間的間隙下 方位置設有1個噴射口 6 1 0爲佳。此外’噴射口 6 1 0的口 徑，可根據氣體導管6 1 b的管壁厚度加以適當設定’例如 是設定成φΐ〜2mm。 另一方面，本實施形態中，爲了以最少支數的氣體導 -13- 200920868 管61b有效率地導入反應氣體，是以設有通過標靶31a、 3 1 b、3 1 c、3 1 d中心延伸的1支氣體導管6 1 b爲例子進行 了說明，但裝置的構成上（因爲有磁鐵組合體的驅動手段 )有時是無法配置如上述設置的氣體導管61b。於該狀況 時，也可隔著等距設置在標靶排列設置方向的正交方向。 此時，也可在標靶排列設置方向的正交方向隔著指定間隔 配置複數支氣體導管5 1，對通過排列設置的標靶3 1 a、 3 1 b、3 1 c、3 1 d彼此間的各間隙朝處理基板S供應的反應 氣體的量進行調整。 如上述，由於構成有反應氣體用的氣體導入手段6b， 因此有反應氣體對處理基板S不會有不均的供應，反應氣 體大致均等存在處理基板S的標靶側的空間，該反應氣體 會從標靶3 1 a、3 1 b、3 1 c、3 1 d飛散朝向處理基板S，和等 離子所活化的濺射粒子形成反應附著、堆積在處理基板表 面。其結果，能夠防止處理基板S內反應性不均造成的處 理基板S面內比抗等膜質不均。 另外，由於是將氣體導管6 1 b配置在各標靶3 1 a、3 1 b 、3 1 c、3 1 d的背面側，因此能夠盡可能縮小不會放出濺射 粒子的各標靶3 1 a、3 1 b、3 1 c、3 1 d彼此間的空間，此外 能夠遍及處理基板S全面成膜均勻的膜厚分佈。再加上， 只要在磁鐵組合體4和真空室1 1的壁面之間的空間沿著 各標靶3 1 a、3 1 b、3 1 c、3 1 d排列設置方向配設氣體導管 6 1 b即可，因此裝置構成簡單，此外，其安裝作業也容易 -14- 200920868 另，本實施形態中，針對濺鍍氣體用的氣體導管61 £ 設置在真空室 Π側壁的例子進行了說明，但並不限於此 ，也可將該濺鍍氣體用的氣體導管61a和反應氣體用的氣 體導管相同配置朝標靶3 1 a、3 1 b、3 1 c、3 1 d排列設置方 向延伸。 〔實施例1〕 本實施例1是使用第1圖所示的濺鍍裝置，利用反應 性濺鍍在處理基板S形成有MoNx的薄膜。該狀況下，標 靶是使用 Mo以習知方法成形爲 200mmx 2650mmx厚度 16mm的平面方向大致長方形，接合於支撐板32後，以未 使用時的濺射面和處理基板S大致平行的同一平面上排列 設有14片。氣體導管61a是使用 (j)6mm (內徑 4.3mm)、 長度3 0 0 0 m m的製品，以平行於標靶的狀態配置在距離磁 鐵組合體背面400mm的位置。於該狀況時，以1〇〇mm間 隔形成有Φ2mm的噴射口 6 1 0讓噴射口 6 1 〇可分別位於標 靶彼此間的間隙下方。 此外’處理基板是使用具有2200mitlx2400mm外觀尺 寸的玻璃基板，源鍍條件是以真空室1 1內的壓力可保持 成0.4Pa地控制質量流控制器導入濺射氣體Ar的同時以 500sccm流量供應反應氣體氮氣，從噴射口 61〇噴出。 (比較例1 ) 比較例1是使用和上述相同的濺鍍裝置，以上述相同 -15- 200920868 條件利用反應性濺鍍在處理基板S形成有MoNx 但是，氮氣是和濺射氣體相同透過設置在真空室 的氣體導管，通過第1及第2接地密封件3 3 a、 間及第2接地密封件3 3 b和處理基板S之間的間 標靶3 1 a、3 1 b、3 1 c、3 1 d前方的空間。 分別對經由上述製成的薄膜其遍及玻璃基板 質分佈（薄膜電阻値）進行測定結果，比較例1 處理基板的周邊供應有反應氣體，所以局部性促 板外圍的反應，導致薄膜電阻値愈往處理基板中 低，其膜質分佈爲±4 1 · 3 %。相對於此，實施例} 過標靶彼此間的間隙供應反應氣體，所以其膜質: ± 1 8.4 %，能夠以更均勻的膜厚分佈形成指定薄膜 【圖式簡單說明】 第1圖爲表示本發明濺鍍裝置模式圖。 第2圖爲氣體導管配置說明圖。 【主要元件符號說明】 1 :濺鍍裝置 1 1真空室 3 1 a〜3 1 d :標靶 3 3 a、3 3 b :接地密封件 6a、6b:氣體導入手段 61a、61b:氣體導管 的薄膜。 1 1側壁 33b兩者 隙供應至 全面的膜 ，因是從 進處理基 央區域愈 ，因是通 分佈爲 -16- 200920868 6 1 0 :噴射口BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus and a sputtering method for forming a predetermined film on a substrate surface. [Prior Art] A sputtering device of a magnetron sputtering method is a magnet assembly in which a plurality of magnets are cross-cored and disposed on the rear side of the target (on the side facing away from the target surface), and the magnet assembly is used. A tunnel-shaped magnetic flux is formed in front of the target (sputtering surface side) to capture electrons ionized in front of the target and secondary electrons generated by sputtering to increase the density of electrons in front of the target, and to introduce the electrons into the vacuum. The increase in the collision rate of the gas molecules of the rare gas in the room can increase the plasma density. Therefore, the magnetron sputtering method of the sputtering device has the advantages of being able to increase the film formation speed, and the like, and is widely used for forming a film on a surface of a substrate to be formed with a specified film. In recent years, for a glass substrate such as FPD manufacturing. A processing substrate having a large area is also a film forming process by a sputtering apparatus using the magnetron sputtering method. A sputtering apparatus capable of effectively forming a large-area processing substrate is known in which a plurality of target targets are arranged in a vacuum chamber to face the processing substrate, and the paired targets are arranged at a specified frequency for the aligned targets. The cross-polarity setting voltage is applied to an alternating current power source, and each target is alternately converted into an anode electrode and a cathode electrode to generate a glow discharge between the anode electrode and the cathode electrode to form a plasma surrounding environment, and each target is sputtered (patent Document η. When the specified film is formed on the surface of the substrate by using the above sputtering device -5-200920868 'Not only the processing substrate has a uniform film thickness, but also reacts with a sputtering gas to introduce a reaction gas such as oxygen or nitrogen. In the case of sputtering, it is also possible to prevent the reaction gas from being deflected into the sputtering chamber to cause uneven reaction in the surface of the processing substrate, resulting in unevenness in the in-plane specific resistance of the processing substrate. Therefore, it is known that the targets arranged in the arrangement are mutually Each gap between the gaps is provided with a gas conduit for introducing a sputtering gas or a reactive gas along the side of the target length, and the gas conduit is A technique of ejecting gas to the processing substrate in each of the gaps between the targets (Patent Document 2). [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 2 0 0 5 - 2 9 0 5 5 (for example, refer to the description of the patent application) [Patent Document 2] Japanese Patent Laid-Open No. 2 0 0 4 - 9 1 9 2 7 (For example, refer to FIG. 1 and FIG. 4) [Disclosed Summary] [Problems to be Solved by the Invention] However, a plurality of target targets are arranged in an arrangement. The sputtering apparatus formed to face the substrate is not sputtered from the gap between the targets during sputtering. Therefore, it is preferable to obtain a uniform film thickness distribution throughout the surface of the substrate. The space for sputtering particles is not reduced as much as possible. Thus, as described above, it is necessary to provide a gas conduit along the length side of the gap between the targets, but the degree of spatial reduction of the sputtered particles is not limited. Further, it is difficult to arrange a gas conduit having a specified outer diameter in the small space, and the assembly is complicated, and the assembly work becomes difficult. Thus, the first problem of the present invention is that in view of the above problems, -6-620020868 A gas conduit for easy configuration of a simple structure, and a sputtering device capable of uniformly distributing the thickness of the substrate over the entire substrate or forming a substantially uniform film than the anti-allergic film. Further, the second object of the present invention is to provide When a reactive thin film is formed on a surface of a treated substrate to form a predetermined thin film, a sputtering method in which the film thickness distribution or the film resistance is substantially uniform throughout the processing substrate can be performed. [Means for Solving the Problem] The sputtering apparatus according to claim 1, further comprising: a plurality of targets arranged in a sputtering chamber at a predetermined interval; and a sputtering power source capable of supplying electric power to each of the targets; a gas introduction means for introducing a sputtering gas and a reaction gas into each of the sputtering chambers, wherein the gas introduction means for introducing the reaction gas into the sputtering chamber has at least one gas conduit extending in a direction in which the respective targets are arranged, the gas conduit Having an ejection port for injecting a reaction gas toward the target while being disposed away from the respective targets on the back side of each of the targets arranged in the arrayAccording to the present invention, at least one gas conduit extending toward each of the target array arrangement directions is disposed away from the respective targets, so that when the reaction gas is ejected from the ejection port formed in the gas conduit, the reaction gas is once dispersed in the arrangement. The space on the back side of each target is then supplied toward the processing substrate through the respective gaps between the targets. As a result, it is possible to prevent the reaction gas from being deflected into the processing substrate by a simple configuration, and it is possible to prevent the film thickness unevenness in the processing substrate due to the occurrence of the reaction unevenness in the processing substrate. In addition, by arranging the gas conduit behind each target, the space between the targets that do not emit the sputtered particles can be minimized as much as possible, and the thin film of the 200920868 can be uniformly distributed throughout the processed substrate. In addition, the sputtering device of the present invention and the sputtering device in which the gaps between the targets are disposed along the side of the length thereof are simpler than the device, and the gas conduits are arranged along the direction in which the targets are arranged. It is ok, so its assembly work is easy. The above-mentioned sputtering power source is an alternating current power source which can be changed to a cross polarity application voltage at a specified frequency for each pair of targets of the plurality of targets arranged in an array, as long as the composition can alternately convert each target into an anode electrode and a cathode electrode. A glow discharge is generated between the anode electrode and the cathode electrode to form a plasma surrounding environment. When each target is sputtered, the space between the targets does not need to be provided with any constituent members such as an anode and a seal, so that no splash is emitted. The space between the targets of the shot particles can be reduced as much as possible. Further, it is preferable that a magnet assembly that can form a tunnel-shaped magnetic flux in front of each target is provided between the target and the gas conduit arranged in series. In this case, in order to improve the efficiency of use of the target, it is preferable to provide a driving means in which the above-mentioned magnet assembly is driven to reciprocate in parallel along the back surface of the target. Further, in order to solve the above-described problems, the sputtering method according to the fifth aspect of the invention is a method in which a target is disposed in a sputtering chamber and a substrate is processed, and a plurality of pixels can be arranged in a predetermined interval. Each pair of targets in the target target is changed to a cross polarity to apply an alternating voltage at a specified frequency. While the target is introduced, the targets are alternately converted into an anode electrode and a cathode electrode to generate a glow discharge between the anode electrode and the cathode electrode. A plasma sputtering method in which a target gas is sputtered to each target to form a predetermined film on the surface of the substrate, which is characterized in that the gas of the above-mentioned -8-200920868 can be diffused in the target After the back side space, the processing substrate is supplied through the gap between the respective targets. [Effect of the Invention] As described above, the sputtering apparatus of the present invention has a simple structure and is easy to assemble a gas conduit, and has an effect of making the film thickness distribution or the film formation substantially uniform over the entire substrate. Further, in the sputtering method of the present invention, since the reaction gas can be introduced into the processing substrate without being biased, it is possible to achieve a film thickness distribution or a substantially uniform film formation resistance over the entire substrate. [Embodiment] The preferred embodiment of the invention is described with reference to Fig. 1, and Fig. 1 shows a magnetron sputtering apparatus (hereinafter referred to as "sputtering apparatus") of the present invention. The sputtering apparatus 1 is an in-line sputtering apparatus, and has a vacuum chamber 11 that is maintained at a predetermined degree of vacuum by a vacuum exhausting means (not shown) such as a rotary pump or a turbo pump to constitute a sputtering chamber. The substrate transporting means 2 is provided on the upper portion of the vacuum chamber 1 1. The substrate transporting means 2 has a conventional structure. For example, the carrier plate 2 for loading the processing substrate S is intermittently driven by a driving means, and the processing substrate s can be sequentially driven. Transfer to a position opposite to the target below. The cathode electrode c is disposed on the lower side of the vacuum chamber 1'. The cathode electrode c' according to the present embodiment has four targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d which are disposed to face each other with respect to the processing substrate S. Each of the targets 3丨a, -9 - 200920868 31b, 31c, 31d is made of Al, Ti, Mo, ITO or the like according to a film composition on the substrate S to be formed on the substrate S, for example, formed into a substantially rectangular parallelepiped. (Looks like a rectangle from above). Each of the standard IEs 3a, 31b, 31c, and 31d is a support plate 32 for cooling the labels 31a, 31b, 31c, and 31d through a bonding material such as indium or tin so as to be floatable in the vacuum chamber n. The state is attached to the frame target targets 31a, 31b, 31c, and 31d of the cathode electrode C via the insulating material of the figure, and the arrangement of the job surface 31 is set to be located and processed on the substrate. The first ground seal 3 3 a surrounding the same plane parallel to S and the first ground seal 3 3 a and the substrate transport means 2 prevent spatter particles and the like from adhering to the vacuum chamber 1 1 The inner wall or the second grounding seal 3 3 a of the carrier plate 2 1 . The mutually opposing side faces 3 1 1 of the respective targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d are not provided with any components such as an anode or a seal. In this way, the space for sputtering particles is not reduced as much as possible during sputtering. The external dimensions of each of the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d are set such that the respective targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d are arranged to be arranged without being larger than the processing. The apparent size of the substrate S. Further, the cathode electrode C has a magnet combination located on the back side of the targets 3 1 a, 3 1 b, 3 1 c , and 3 1 d (the opposite side of the sputtering surface 310, and the lower side in Fig. 1). Body 4. The magnet assembly 4 of the same configuration has a support plate 4 1 disposed parallel to the respective targets 3 1 a, 3 1 b, 3 1 c ' 3 1 d. The support plate 41 is formed by a lateral width smaller than the respective targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d, and is formed along the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d. The rectangular plate extending in the longitudinal direction to the side of the two-10-200920868 is formed of a magnetic material capable of increasing the adsorption force of the magnet. The support plate 41 is provided with a magnet 42 that is arranged in a rod shape at the center thereof, and a peripheral magnet that is disposed along the periphery of the support plate 41 in this case, and converts the central magnet 42 into a volume at the same magnetization. For example, the volume and the equivalent side magnet in the same magnetization as the peripheral magnet 43 are: central magnet: peripheral magnet = 1: 2 : 1 ). In this way, equalized closed-loop tunnel-shaped magnetic waves are formed on the front sputter surface 3 1 0 side of each of the targets 31a, 31b, 31c, and 31d, respectively, by ionizing the front sides of the capture targets 31a, 31b, 31c, and 31d. The secondary electrons generated by the electron plating can increase the electron density in front of the targets 3 1 a, 3 1 b, and 3 1 c - to increase the plasma density. Each of the magnet assemblies 4 is a drive shaft 51 that is coupled to a drive unit 5 such as a motor or a pneumatic cylinder, and is formed so as to be able to integrally reciprocate in parallel and at a speed along the targets 3 1 a, 3 1 b, and 3 1 . c, 3 1 d are arranged between the two positions. In this way, an equal erosion zone can be obtained throughout the target, 3 1 b, 3 1 c, and 3 1 d. In addition, two of the targets adjacent to each other among the 3 1 a, 3 1 b, 3 1 c, and 3 1 d are paired, and the paired targets 3 1 a, 3 1 b, or 3 1 c, 3 1 d, connected to the output cable ΚΙ, K2 of the AC power supply El, E2. Next, the voltages are applied to the targets 31a, 31b or 31c, 31d by alternately changing the polarity at a predetermined frequency (1 to 400 kHz) through the intersections E1 and E2. The AC power sources E1, E2 have a conventional configuration, for example, a power supply portion where power supply is possible; and a polarity can be changed at a specified frequency to output a voltage to each target 3 1 a, 3 1 b or 3 1 c , 3 1 d material center 43 〇 design (circumference, and splash 3 1 d constitutes and equals the square 3 1a target is a · from the current to make a · can make alternate vibration -11 - 200920868 The waveform of the output voltage from the AC power sources E1 and E2 is substantially a sine wave 'but not limited to this', and may be, for example, a substantially square wave. Further, the vacuum chamber 1 1 is formed of a rare gas such as Ar. The gas introduction means 6a for introducing a sputtering gas. The gas introduction means 6a has a gas conduit 61a attached to the side wall of the vacuum chamber 11. The gas conduit 61a communicates with the gas source 630a through the mass flow controller 62a. 1 a The sputtering gas introduced into the vacuum chamber 1 1 is supplied to the target through the gap between the first and second grounding seals 3 3a and 3 3b and between the second grounding seal 33b and the substrate carrying means 2 Target 3 1 a, 3 1 b, 3 1 c, 3 1 d ahead Then, the substrate S is transported by the substrate transporting means 2 to a position facing the pair of targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d, and the sputtering gas is introduced as described above, and the AC power is transmitted. E 1 and E2 respectively apply an alternating voltage to a pair of targets 3 1 a, 3 1 b and 3 1 c, 3 1 d, and alternately convert each target 3 1 a, 3 1 b, 3 1 c, 31d into a yang. The electrode and the cathode electrode form a plasma discharge between the anode electrode and the cathode electrode to form a plasma surrounding environment. As a result, ions in the plasma surrounding environment accelerate toward the target 31a, 3 1 b, 3 1 c which becomes the cathode electrode side. The impact of the 3 1 d causes the target atoms to fly and adhere to the surface of the substrate S to form a predetermined film on the surface of the substrate S. On the other hand, when the sputtering device 1 is used for reactive sputtering, the sputtering is introduced. When a reaction gas such as oxygen or nitrogen is introduced while the gas is being injected, if the reaction gas is deflected into the vacuum chamber 1 1, the reaction unevenness occurs in the surface of the substrate S. Therefore, it is necessary to prevent the surface of the substrate S from being treated. -12- 200920868 The quality is uneven. In this embodiment, it is One gas conduit 61 b is disposed away from each of the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d, and is disposed on the back side of each of the magnet assemblies 4 arranged in series toward each of the targets 3 1 a The arrangement direction of 3 1 b, 3 1 c, and 3 1 d is extended by the center of each target. The one end of the gas conduit 61b is connected to the gas source 63b of the reaction gas such as oxygen through the mass flow controller 62b. The gas introduction means 6b constituting the reaction gas. The gas conduit 61b is, for example, a stainless steel tube having a diameter of Φ5 to 10 mm, and the length dimension is set to be longer or equal to the full width of the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d arranged in an array. The sheet 'facing the target side' is formed with three ejection openings 610 separated by a predetermined interval. Thus, when the reaction gas is ejected from the ejection port 610 formed in the gas conduit 61b, the reaction gas will diffuse into the space on the back side of each of the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d. The gaps between the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d which are arranged in alignment are supplied toward the processing substrate S. The opening position of the injection port 610 or the number thereof and the distance between the targets 3 1 a, 3 1 b, 31c, 31d and the gas conduit 61b are configured as follows: the reaction gas is controlled to flow from the mass flow controller 62b. When the port 6 1 0 is ejected, the reaction gas is allowed to diffuse in the space on the back side of each of the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d, but the target is not particularly limited. It is preferable that one injection port 6 1 0 is provided at a position below the gap. Further, the diameter of the "ejection port 610" can be appropriately set according to the thickness of the wall of the gas conduit 6 1 b, for example, φ ΐ 2 mm. On the other hand, in the present embodiment, in order to efficiently introduce the reaction gas with the minimum number of gas guides -13 - 200920868 tubes 61b, it is provided with the targets 31a, 3 1 b, 3 1 c, 3 1 d Although one gas duct 6 1 b extending in the center has been described as an example, the gas conduit 61b provided as described above may not be disposed in the configuration of the apparatus (because of the driving means of the magnet assembly). In this case, it is also possible to set the direction orthogonal to the direction in which the target array is arranged with an equal distance. At this time, the plurality of gas conduits 5 may be disposed at a predetermined interval in the orthogonal direction of the target arrangement direction, and the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d arranged by the array may be placed on each other. Each gap therebetween is adjusted toward the amount of the reaction gas supplied from the processing substrate S. As described above, since the gas introduction means 6b for the reaction gas is formed, there is no uneven supply of the reaction gas to the processing substrate S, and the reaction gas is substantially equal to the space on the target side of the processing substrate S, and the reaction gas is The targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d are scattered toward the processing substrate S, and the sputtered particles activated by the plasma form a reaction adhesion and deposit on the surface of the processing substrate. As a result, it is possible to prevent unevenness in the in-plane specific resistance of the processing substrate S due to the unevenness in reactivity in the processing substrate S. Further, since the gas conduit 6 1 b is disposed on the back side of each of the targets 3 1 a, 3 1 b , 3 1 c, and 3 1 d, it is possible to reduce the number of targets 3 that do not emit sputtered particles as much as possible. The space between 1 a, 3 1 b, 3 1 c, and 3 1 d is uniform, and the film thickness distribution can be uniformly formed over the entire processing substrate S. Further, as long as the space between the magnet assembly 4 and the wall surface of the vacuum chamber 11 is arranged along the respective targets 3 1 a, 3 1 b, 3 1 c, 3 1 d, the gas conduit 6 1 is disposed. b, the apparatus configuration is simple, and the mounting work is also easy. -14-200920868 In the present embodiment, the gas conduit 61 £ for the sputtering gas is provided on the side wall of the vacuum chamber, but the example is described. The gas conduit 61a for the sputtering gas and the gas conduit for the reaction gas may be arranged in the same arrangement direction in the direction in which the targets 3 1 a, 3 1 b, 3 1 c, and 3 1 d are arranged. [Embodiment 1] In the first embodiment, a film of MoNx was formed on the substrate S by reactive sputtering using the sputtering apparatus shown in Fig. 1. In this case, the target is formed into a substantially rectangular shape in the plane direction of 200 mm x 2650 mm x thickness 16 mm by a conventional method using Mo, and after bonding to the support plate 32, the sputtering surface in the unused state is on the same plane substantially parallel to the processing substrate S. There are 14 pieces arranged. The gas conduit 61a is a product having a length of (j) 6 mm (inner diameter 4.3 mm) and a length of 300 mm, and is disposed at a position 400 mm from the back surface of the magnet assembly in a state parallel to the target. In this case, an injection port 6 1 0 of Φ 2 mm is formed at intervals of 1 mm, and the injection ports 6 1 〇 are respectively located below the gap between the targets. Further, the 'processing substrate is a glass substrate having an outer dimension of 2200 mitl x 2400 mm. The source plating condition is to control the mass flow controller to introduce the sputtering gas Ar while the pressure in the vacuum chamber 1 1 can be maintained at 0.4 Pa while supplying the reaction gas at a flow rate of 500 sccm. Nitrogen gas was ejected from the injection port 61. (Comparative Example 1) In Comparative Example 1, the same sputtering apparatus as described above was used, and MoNx was formed on the treated substrate S by reactive sputtering under the same conditions of the above -15-200920868. However, nitrogen gas was provided in the same manner as the sputtering gas. The gas conduit of the vacuum chamber passes through the first and second grounding seals 3 3 a , the intermediate target between the second grounding seal 3 3 b and the processing substrate S 3 a , 3 1 b, 3 1 c , 3 1 d ahead of the space. The film produced through the above was measured for the distribution of the glass substrate (thin film resistance 値), and the reaction gas was supplied to the periphery of the substrate of Comparative Example 1. Therefore, the reaction of the peripheral layer of the plate was locally promoted, and the film resistance was cured. The processing substrate is low and its film quality distribution is ±4 1 · 3 %. On the other hand, in the example}, the reactive gas is supplied to the gap between the targets, so that the film quality is ±1 8.4 %, and the specified film can be formed with a more uniform film thickness distribution. [Simple description of the drawing] Fig. 1 shows the present A schematic diagram of a sputtering device is invented. Figure 2 is an explanatory diagram of the gas conduit configuration. [Description of main components] 1 : Sputtering apparatus 1 1 Vacuum chamber 3 1 a to 3 1 d : Target 3 3 a, 3 3 b : Grounding seals 6a, 6b: Gas introduction means 61a, 61b: Gas conduit film. 1 1 Side wall 33b Both gaps are supplied to the full membrane, because it is from the processing base area, because the distribution is -16- 200920868 6 1 0: injection port
El、Ε2 :濺射電源 S :處理基板 -17-El, Ε2: sputtering power supply S: processing substrate -17-