JP4959175B2 - Magnetron sputtering electrode and sputtering apparatus provided with magnetron sputtering electrode - Google Patents

Description

  The present invention relates to a magnetron sputtering electrode for forming a predetermined thin film on a processing substrate by a magnetron sputtering method and a sputtering apparatus provided with the magnetron sputtering electrode.

  In a magnetron sputtering type sputtering apparatus, a magnet assembly having a plurality of magnets with alternating polarities is arranged on a support plate behind the target (on the side facing the sputtering surface). By forming a tunnel-like magnetic flux in front of the target (on the sputtering surface side) and capturing the electrons ionized in front of the target and secondary electrons generated by sputtering, the electron density in front of the target is increased, and these electrons and The plasma density can be increased by increasing the probability of collision with rare gas molecules introduced into the vacuum chamber. For this reason, there is an advantage that the film forming speed can be improved without accompanying a significant temperature rise of the processing substrate, and it is often used to form a predetermined thin film on the processing substrate.

By the way, in recent years, a thin film is often formed by a magnetron sputtering method on a processing substrate having a large area, such as a glass substrate for manufacturing an FPD, and the area of the target is increased accordingly. In this case, in order to efficiently form a film on a large-area processing substrate, it is known that a plurality of magnet assemblies having the above-described configuration are arranged in parallel at regular intervals behind a large-area target (for example, Patent Document 1).
JP-A-8-134640 (see, for example, FIG. 3).

  As described above, if a plurality of magnet assemblies are arranged in parallel at equal intervals behind the target, the plasma distribution in front of the target becomes substantially uniform, and even when a film is formed on a processing substrate having a large area, the processing substrate surface The film thickness distribution can be made substantially uniform. However, for example, when reactive sputtering is performed by introducing a reactive gas such as oxygen together with a sputtering gas such as argon, the reactivity is uneven in the central region and the outer peripheral region of the processing substrate, and the specific resistance is increased in the processing substrate surface. There was a problem that the film quality such as value became non-uniform.

  Therefore, in view of the above points, an object of the present invention is to provide a magnetron sputtering electrode and a sputtering apparatus including the magnetron sputtering electrode that can make film quality such as film thickness distribution and specific resistance value substantially uniform over the entire surface of the processing substrate. It is in.

  In order to solve the above problems, a magnetron sputter electrode according to claim 1 includes a central magnet and a peripheral magnet to form a tunnel-like magnetic flux in front of the target behind the target provided facing the processing substrate. In the magnetron sputter electrode in which at least four magnet assemblies having the same structure are arranged, the interval between the magnet assemblies facing the central region of the processing substrate among the magnet assemblies arranged in parallel is set to the magnet assembly at both ends thereof. It is characterized in that it is set larger than the space between solids.

  According to this, when the interval in the parallel arrangement direction of the magnet assemblies facing the central region of the processing substrate is made larger than that at the both ends, the interval between the magnetic flux lines penetrating the processing substrate is increased. By spreading along the three-dimensional juxtaposed direction, the reaction in front of the processing substrate becomes substantially uniform over the entire surface when the film is formed by reactive sputtering. As a result, the film quality such as the specific resistance can be made uniform in the processing substrate surface.

  Here, when the number of magnet assemblies arranged in parallel is large (for example, 8 or more), the interval between the magnet assemblies is gradually increased from both ends toward the center along the magnet assembly direction. If it is made larger, the oblique component of the plasma is improved along the magnetic field profile, and the reaction in front of the processing substrate may be made substantially uniform over the entire surface.

  Further, if the interval between the magnet assemblies facing the central region of the processing substrate is made constant, a target having a large area can be eroded substantially uniformly over the entire surface, and the entire surface of the processing substrate can be eroded. The film thickness distribution may be made substantially uniform.

  If drive means for reciprocating the magnet assemblies integrally and in parallel along the rear surface of the target is provided, higher utilization efficiency of the target can be achieved by two-dimensional reciprocation of the magnet assembly.

A sputtering apparatus according to claim 5, wherein the magnetron sputtering electrode according to any one of claims 1 to 4 is disposed in a sputtering chamber capable of being evacuated, and gas introduction means for introducing a predetermined gas into the sputtering chamber; A sputtering power source is provided which enables the sputtering power to be applied to the target.

  As described above, the magnetron sputtering electrode of the present invention and the sputtering apparatus equipped with this magnetron sputtering electrode can not only make the film thickness distribution substantially uniform over the entire surface of the processing substrate, but also have a specific resistance even when reactive sputtering is performed. The film quality such as the value can be made substantially uniform.

  Referring to FIGS. 1 and 2, 1 is a magnetron type sputtering apparatus (hereinafter referred to as “sputtering apparatus”) having a magnetron sputtering electrode C of the present invention. The sputtering apparatus 1 is of an in-line type and has a sputtering chamber 11 that can be maintained at a predetermined degree of vacuum through vacuum exhaust means (not shown) such as a rotary pump or a turbo molecular pump. A substrate transfer means (not shown) is provided in the upper space of the sputtering chamber 11. This substrate transport means has a known structure, for example, has a carrier on which the process substrate S is mounted, and can drive the drive means intermittently to sequentially transport the process substrate S to a position facing a target described later. .

  The sputter chamber 11 is provided with gas introduction means 2. The gas introduction means 2 communicates with a gas source 23 via a gas pipe 22 provided with a mass flow controller 21, and a sputtering gas such as argon or a reactive gas used in reactive sputtering is constant in the sputtering chamber 11. It can be introduced at a flow rate of. The reaction gas is selected according to the composition of the thin film to be formed on the processing substrate S, and gas containing oxygen, nitrogen, carbon, hydrogen, ozone, water, hydrogen peroxide, or a mixed gas thereof is used. . A magnetron sputtering electrode C is disposed below the sputtering chamber 11.

  The magnetron sputter electrode C has a target 31 that is substantially rectangular parallelepiped (rectangular in top view). The target 31 is prepared by a known method according to the composition of a thin film to be formed on the processing substrate S such as Al alloy, Mo, or ITO, and indium or tin is applied to a backing plate 32 that cools the target 31 during sputtering. Are attached to the frame 34 of the magnetron sputter electrode C via an insulating plate 33. In this case, the target 31 is set to be larger than the outer dimension of the processing substrate S. For this reason, when forming a film on the processing substrate S having a large area, such as a glass substrate for FPD production, the surface area of the sputtering surface 311 of the target 31 is also increased.

  The magnetron sputter electrode C is located behind the target 31 and is equipped with magnet assemblies 4a to 4h. Each of the magnet assemblies 4 a to 4 h has a support plate (yoke) 41 provided in parallel with the target 31. Each support plate 41 formed in the same shape is composed of a rectangular flat plate formed so as to extend on both sides along the longitudinal direction of the target 31, and is made of a magnetic material that amplifies the attractive force of the magnet. . Further, when a predetermined number of magnet assemblies 4a to 4f are arranged behind the target 31, the individual support plates 41 are arranged so as to become smaller as a whole than the width of the target along the parallel arrangement direction of the magnet assemblies 4a to 4f. The width is fixed.

  On each support plate 41, a bar-shaped central magnet 42 along the longitudinal direction of the target 31 and a peripheral magnet 43 provided along the outer periphery of the support plate 41 are provided alternately with different polarities. In this case, the volume when converted to the same magnetization of the central magnet 42 is about the sum of the volumes when converted to the same magnetization of the peripheral magnet 43 (peripheral magnet: center magnet: peripheral magnet = 1: 2: 1). Designed to be

  As a result, balanced closed-loop tunnel-like magnetic fluxes are formed in front of the target 31, respectively. By capturing electrons ionized in front of the target 31 and secondary electrons generated by sputtering, electrons in front of the target 31 are captured. The plasma density can be increased by increasing the density.

  Here, when the interval between the magnet assemblies is made constant, the plasma distribution in front of the target 31 becomes substantially uniform, and even if the film is formed on the processing substrate S having a large area, the plasma is distributed within the surface of the processing substrate S. Although the film thickness distribution is substantially uniform, when reactive sputtering is performed by introducing a reactive gas such as oxygen, unevenness in the reactivity occurs in the central region of the processing substrate S and the outer peripheral region thereof, and the processing substrate S is in the plane. The film quality such as the specific resistance value may be non-uniform. In this case, the reactivity of the central region generally deteriorates.

  In the present embodiment, the distance between the magnet assemblies 4c, 4d, 4e, and 4f facing the central region of the processing substrate S among the magnet assemblies 4a to 4h that are arranged side by side is smaller than the distance between the both ends. Largely set. That is, as shown in FIG. 2, among the magnet assemblies 4a to 4h arranged side by side, the distance D1 between the magnet assemblies 4c, 4d, 4e, and 4f facing the central region of the processing substrate S is maximized and constant. The distance D2 between the magnet assemblies 4c and 4f on both sides thereof and the magnet assemblies 4b and 4g adjacent to the magnet assemblies 4c and 4f is set to be smaller than D1, and the magnet assemblies 4b and 4g and the magnets located at both ends are set. The distance D3 between the assemblies 4a and 4h was set to be smaller than D2, and the distance between the magnet assemblies 4a to 4h was increased stepwise from the both ends toward the center along the parallel arrangement direction.

  In this case, when the magnetic flux lines M passing through the processing substrate S are represented in a simulated manner, as shown in FIG. 3 (a), as compared with the case where the magnet assemblies are arranged at equal intervals, FIG. As shown in b), when the interval between the magnet assemblies 4a to 4h is changed as described above, the arch of the tunnel-like magnetic flux in front of the target 31 formed by the magnet assemblies 4c to 4f in the central region is more processed substrate. It approaches S. In this case, the plasma formed by the electrons captured by the magnetic flux closer to the processing substrate S is closer to the processing substrate S, and the sputtered particles that are scattered from the target 31 and directed toward the processing substrate S are activated by this plasma. This improves the reactivity in front of the central region of the processing substrate S. As a result, the film quality such as the specific resistance value can be made uniform in the processing substrate surface S.

  Then, the processing substrate S is transported to a position facing the target 31, a predetermined sputtering gas or reaction gas is introduced through the gas introduction means 2, and then negative through a sputtering power source 5 connected to the target 31. When a DC voltage or a high frequency voltage is applied, an electric field perpendicular to the processing substrate S and the target 31 is formed, plasma is generated in front of the target 31, and the target 31 is sputtered to form a film on the processing substrate S. .

  Thereby, when forming a film by reactive sputtering, the reaction in front of the processing substrate S becomes substantially uniform over the entire surface. As a result, the film thickness distribution can be made substantially constant, and the film quality such as the specific resistance value can be made substantially uniform within the processing substrate surface.

  By the way, when each magnet assembly 4a-4h is comprised as mentioned above, the plasma density above the central magnet 42 or the peripheral magnet 43 becomes low, and compared with the periphery, the erosion of the target 31 accompanying the progress of sputtering. The amount is reduced. For this reason, driving means such as an air cylinder (not shown) is provided, and the magnet assemblies 4a to 4h are attached to the driving shaft, and the magnet assemblies 4a to 4h are arranged at two horizontal positions along the parallel direction of the target 31. The position of the tunnel-like magnetic flux may be changed by reciprocally moving 4h in parallel. Thereby, the entire surface including the outer peripheral edge portion of the target 31 can be eroded almost uniformly, and the utilization efficiency of the target 31 can be further enhanced by two-dimensional reciprocation.

  The distances D1, D2, and D3 between the magnet assemblies 4a to 4h are appropriately set in consideration of the size of the support plate 41, the magnetic strength of the central magnet 42 and the peripheral magnet 43 provided on the support plate 41, and the like. In order to increase the utilization efficiency of the target 31 as described above, when the magnet assemblies 4a to 4h are reciprocated between two points, in particular, it is considered that no non-eroding region remains in the central region of the surface of the target 31. However, if the intervals D1, D2, and D3 are set larger than a predetermined value, the film thickness distribution on the processing substrate S cannot be made substantially uniform.

  For example, a target having an outer dimension of 1200 mm × 1400 mm is used as the target 31, and a support plate 41 having an outer dimension of 75 mm × 1440 mm is used, and a rod-like shape is formed on the support plate 41 along the longitudinal direction of the target 31. When the central magnet 42 and the peripheral magnet 43 are provided along the outer periphery of the support plate 41 and the eight magnet assemblies 4a to 4h are reciprocated along the parallel direction within a range of 120 mm, D1 is set to 90 mm. In this case, D2 is set to a range of 65 to 75 mm, and D3 is set to a range of 35 to 40 mm.

  In this embodiment, the eight magnet assemblies 4a to 4h are arranged in parallel with the mutual distances D1 to D3 being changed. However, the number of magnet assemblies and the mutual distance are limited to this. However, if the interval between the magnet assemblies facing the central region of the processing substrate among the magnet assemblies arranged side by side is set larger than the interval at both ends, the same as above An effect is obtained.

In Example 1, an ITO film was formed on the processing substrate S using the sputtering apparatus 1 shown in FIG. 1 in which eight magnet assemblies 4 a to 4 h were arranged in parallel behind the target 31. In this case, a glass substrate (1200 mm × 1300 mm) is used as the processing substrate S, and an external shape of 1700 mm × 1800 mm is used as a target 31 by using a known method in which SnO ₂ is added to In ₂ O ₃ by 10 wt%. It was made to have dimensions and joined to the backing plate 32. Then, an ITO film was formed on the glass substrate S by reactive sputtering.

  Further, a support plate 41 having an outer dimension of 130 mm × 1840 mm is used. On the support plate 41, a rod-shaped central magnet 42 along the longitudinal direction of the target 41 and a peripheral magnet along the outer periphery of the support plate 41. 43. And D1 was set to 110 mm, D2 was set to 65 mm, and D3 was set to 20 mm.

As sputtering conditions, the mass flow controller 21 is controlled so that the pressure in the evacuated sputtering chamber 11 is maintained at 0.67 Pa, and argon (Ar flow rate 100 sccm) as a sputtering gas and H as a reactive gas are used. ₂ O (H ₂ O flow rate 8 sccm) and O ₂ were introduced into the sputtering chamber 11 at a predetermined flow rate. Further, the input power to the target 31 was set to 65 kW, the sputtering time was set to 15 seconds, and the eight magnet assemblies 4a to 4h were formed while reciprocating integrally at 160 mm. FIG. 4 (a) shows that after reactive sputtering is performed on the glass substrate S by changing the gas flow rate of the reaction gas O ₂ under the above conditions, the processing substrate is taken out, and the processing temperature is set to 200 ° C. in an atmospheric annealing furnace. The change in the specific resistance value at predetermined measurement points (P1, P2, P3 (see FIG. 2)) in the glass substrate S surface when set and annealed for 60 minutes is shown.
(Comparative Example 1)

As the comparative example 1, the sputtering apparatus 1 shown in FIG. 1 was used, but nine magnet assemblies arranged in parallel at equal intervals of 46 mm were used (see FIG. 3A). Further, the sputtering conditions were the same as in Example 1, and an ITO film was formed on the same glass substrate S as in Example 1 by reactive sputtering. In FIG. 4B, the reactive gas O ₂ gas flow rate is changed under the above conditions to perform reactive sputtering on the glass substrate S, and after forming the film, the processing substrate is taken out and processed in an atmospheric annealing furnace. A change in the specific resistance value at predetermined measurement points (P1, P2, P3 (see FIG. 2)) in the surface of the glass substrate S when the temperature is set to 200 ° C. and annealing is performed for 60 minutes is shown.

Referring to explain FIGS. 4 (a) and 4 (b), in Comparative Example 1, even by changing the flow rate of O _2, the resistivity is substantially constant at the measurement point P1, P2, P3 As the flow rate of O ₂ increases and the flow rate of O ₂ increases, the difference in specific resistance value between the measurement point P1 in the outer peripheral region of the glass substrate S and the measurement point P2 in the central region of the glass substrate S also increases. _When the flow rate of ₂ is set to 10 sccm, a difference of about 400 μΩ · cm occurs, and it can be seen that the film quality in the surface of the glass substrate S cannot be made substantially uniform.

In contrast, Example 1, when setting the flow rate of _{O 2} in the front and rear 3 sccm, the resistivity is substantially constant at the measurement point P1, P2, P3, also increasing the flow rate of _{O 2} is, the outer peripheral region The difference in specific resistance value between the measurement point P1 and the measurement point P2 in the central region does not increase, and even when the flow rate of O ₂ is set to 10 sccm, the specific resistance value difference is 100 μΩ · cm or less. there were. Thus, it can be seen that the film quality can be kept substantially uniform in the glass substrate S plane.

  In Example 2, a MoN film was formed on the processing substrate S using the sputtering apparatus 1 shown in FIG. 1 in which eight magnet assemblies 4 a to 4 h were arranged in parallel behind the target 31. In this case, a glass substrate (1200 mm × 1300 mm) is used as the processing substrate S, and a target (Mo (99.95%)) is used as the target 31 so as to have an external dimension of 1700 mm × 1800 mm by a known method. Fabricated and joined to backing plate 32. Then, a MoN film was formed on the glass substrate S by reactive sputtering.

  Further, a support plate 41 having an outer dimension of 130 mm × 1840 mm is used. On the support plate 41, a rod-shaped central magnet 42 along the longitudinal direction of the target 41 and a peripheral magnet along the outer periphery of the support plate 41. 43. And D1 was set to 110 mm, D2 was set to 65 mm, and D3 was set to 20 mm.

As sputtering conditions, the mass flow controller 21 is controlled so that the pressure in the sputter chamber 11 being evacuated is maintained at 0.3 Pa, and argon (Ar flow rate: 200 sccm) as a sputtering gas and N as a reaction gas. ₂ was introduced into the sputtering chamber 11 at a predetermined flow rate. Moreover, the input power to the target 31 was set to 110 kW, and the sputtering time was set to 40 seconds. FIG. 5A shows predetermined measurement points (P1, P2) in the surface of the glass substrate S when reactive gas sputtering is performed on the glass substrate S by changing the gas flow rate of the reaction gas N ₂ under the above conditions. , P3 (see FIG. 2))).
(Comparative Example 2)

As the comparative example 2, the sputtering apparatus 1 shown in FIG. 1 was used, but nine magnet assemblies set in parallel at equal intervals of 46 mm were used (see FIG. 3A). Further, the sputtering conditions were the same as in Example 2, and a MoN film was formed on the same glass substrate S as in Example 2 by reactive sputtering. FIG. 5 (b) shows predetermined measurement points (P1, P2) in the surface of the glass substrate S when reactive sputtering is performed on the glass substrate S by changing the gas flow rate of the reaction gas N ₂ under the above conditions. P2 and P3 (see FIG. 2))) are shown.

Referring to explain FIGS. 5 (a) and 5 (b), in Comparative Example 2, only the addition of N ₂ is the reaction gas, and the measurement point P1 of the outer peripheral region of the glass substrate S, a glass substrate A difference occurs in the specific resistance value at the measurement point P2 in the central region of S, and as the flow rate of N ₂ increases, the difference in specific resistance value at the measurement points P1 and P2 increases, and the flow rate of N ₂ increases. When it is set to 200 sccm, a difference of about 100 μΩ · cm occurs, and it can be seen that the film quality in the surface of the glass substrate S cannot be made substantially uniform.

In contrast, Example 2, when the flow rate of _{N 2} is 50sccm less, the specific resistance value at the measurement point P1, P2, P3 are substantially constant, the flow rate of _{N 2} is increased, the measurement of the outer peripheral region Although there is a difference in specific resistance value between the point P1 and the measurement point P2 in the central region, even when the N ₂ flow rate was set to 200 sccm, the specific resistance value difference was 25 μΩ · cm or less. Thus, it can be seen that the film quality can be kept substantially uniform in the glass substrate S plane.

In Example 3, the sputtering apparatus 1 shown in FIG. 1 was used. As the magnet assembly, as shown in FIG. 6A, a magnet assembly having five magnet assemblies arranged in parallel was used. In this case, a glass substrate (550 mm × 650 mm) is used as the processing substrate S, and an outer shape of 910 mm × 880 mm is used by a known method using a target 31 in which 10% by weight of SnO ₂ is added to In ₂ O _3. It was made to have dimensions and joined to the backing plate 32.

  In addition, a support plate 41 having an outer dimension of 130 mm × 900 mm is used, a rod-shaped central magnet 42 along the longitudinal direction of the target 41 on the support plate 41, and a peripheral magnet along the outer periphery of the support plate 41. 43. The distance D4 between the magnet assemblies at both ends was set to 20 mm, and the distance between the magnet assemblies facing the central region of the glass substrate was set to 65 mm (see FIG. 6A).

Then, an ITO film was formed on the glass substrate S at 200 ° C. by reactive sputtering under the same conditions as in Example 1. During film formation, the magnet assembly was reciprocated integrally at 100 mm. In FIG. 7A, a predetermined measurement point (P1, P2) in the glass substrate S surface when reactive sputtering is performed on the glass substrate S by changing the gas flow rate of the reaction gas O ₂ under the above conditions. Changes in the specific resistance values of P2 and P3 (see FIG. 2) are shown.
(Comparative Example 3)

As Comparative Example 3, the sputtering apparatus 1 shown in FIG. 1 was used. As the magnet assembly, as shown in FIG. 6B, a magnet assembly having five magnet assemblies arranged at equal intervals was used. In this case, the distance D6 between the magnet assemblies was set to 43 mm (see FIG. 6B). Further, the sputtering conditions were the same as in Example 3, and an ITO film was formed on the same glass substrate S as in Example 3 by reactive sputtering. In FIG. 7B, a predetermined measurement point (P1, P2) in the glass substrate S surface when reactive sputtering is performed on the glass substrate S by changing the gas flow rate of the reaction gas O ₂ under the above conditions. Changes in the specific resistance values of P2 and P3 (see FIG. 2) are shown.

Referring to explain FIGS. 7 (a) and 7 (b), in Comparative Example 3, in accordance with the flow rate of O ₂ is increased, and the measurement point P1 of the outer peripheral region of the glass substrate S, the center of the glass substrate S The difference in specific resistance value between the measurement point P2 in the region also increases, and when the flow rate of O ₂ is set to 10 sccm, a difference of about 250 μΩ · cm occurs, and the film quality is substantially uniform in the glass substrate S plane. It turns out that it cannot hold.

In contrast, in Example 3, increasing the flow rate of O _2, and the measurement point P1 of the outer peripheral region, the difference between the specific resistance value at the measurement point P2 of the central region does not increase, the flow rate of O ₂ Even when set to 10 sccm, the difference in specific resistance value was 80 μΩ · cm or less. Thereby, it turns out that the film quality can be made substantially uniform in the glass substrate S plane.

The figure which illustrates typically the sputtering device of this invention. The figure explaining arrangement | positioning of a magnet assembly. (A) is a figure which shows the magnetic flux line when a magnet assembly is arrange | positioned at equal intervals, and simulates. (B) is a figure which shows the magnetic flux line when the magnet assembly is arrange | positioned according to this invention. (A) shows the change of the specific resistance value of the predetermined point in the glass substrate surface which formed the ITO film | membrane according to Example 1. FIG. (B) shows the change of the specific resistance value of the predetermined point in the glass substrate surface which formed the ITO film | membrane according to the comparative example 1. FIG. (A) shows the change of the specific resistance value of the predetermined point in the glass substrate surface which formed the MoN film | membrane according to Example 2. FIG. (B) shows the change of the specific resistance value of the predetermined point in the glass substrate surface which formed the MoN film | membrane according to the comparative example 2. FIG. (A) is a figure explaining the modification of arrangement | positioning of the magnet assembly of this invention. (B) is a figure explaining arrangement | positioning of the magnet assembly which is a comparative example of (a). (A) shows the change of the specific resistance value of the predetermined point in the glass substrate surface which formed the ITO film | membrane according to Example 3. FIG. (B) shows the change of the specific resistance value of the predetermined point in the glass substrate surface which formed the ITO film | membrane according to the comparative example 3. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Magnetron sputtering apparatus 31 Target 4a-4h Magnet assembly 42 Central magnet 43 Peripheral magnet 5 Sputtering power supply C Magnetron sputter electrode S Processing substrate

Claims (5)

In a magnetron sputter electrode in which at least four magnet assemblies having a central magnet and peripheral magnets are arranged in parallel behind a target provided opposite to the processing substrate in order to form a tunnel-like magnetic flux in front of the target. A magnetron sputter electrode, characterized in that, in the magnet assembly provided, the interval between the magnet assemblies facing the central region of the processing substrate is set larger than the interval between the magnet assemblies at both ends thereof. 2. The magnetron sputter electrode according to claim 1, wherein the interval between the magnet assemblies is increased stepwise from both ends toward the center along the direction in which the magnet assemblies are arranged side by side. 3. The magnetron sputter electrode according to claim 1, wherein a distance between magnet assemblies facing the central region of the processing substrate is constant. The magnetron sputter electrode according to any one of claims 1 to 3, further comprising driving means for reciprocating the magnet assemblies integrally and in parallel along the rear surface of the target. The magnetron sputter electrode according to any one of claims 1 to 4 is disposed in a sputtering chamber that can be evacuated, and gas introduction means for introducing a predetermined gas into the sputtering chamber and sputtering power can be input to the target. A sputtering apparatus comprising a sputtering power source.

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