WO2008136337A1 - Sputtering apparatus and sputtering method - Google Patents

Sputtering apparatus and sputtering method Download PDF

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Publication number
WO2008136337A1
WO2008136337A1 PCT/JP2008/057894 JP2008057894W WO2008136337A1 WO 2008136337 A1 WO2008136337 A1 WO 2008136337A1 JP 2008057894 W JP2008057894 W JP 2008057894W WO 2008136337 A1 WO2008136337 A1 WO 2008136337A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
targets
gas
parallel
introducing
Prior art date
Application number
PCT/JP2008/057894
Other languages
French (fr)
Japanese (ja)
Inventor
Tatsunori Isobe
Yasuhiko Akamatsu
Takaomi Kurata
Makoto Arai
Takashi Komatsu
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to CN2008800118311A priority Critical patent/CN101657562B/en
Priority to KR1020097021361A priority patent/KR101050121B1/en
Publication of WO2008136337A1 publication Critical patent/WO2008136337A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Film qualities, such as film thickness distribution and specific resistance value, are substantially made uniform over the entire surface of a processing substrate for forming a prescribed thin film by reactive sputtering. A sputtering apparatus is provided with a plurality of targets (31a-31d) arranged in parallel at prescribed intervals in a sputtering chamber in a vacuum chamber (11); sputtering power supplies (E1, E2) for supplying each target with power; and gas introducing means (6a, 6b) for introducing a sputtering gas and a reaction gas into the sputtering chamber. The gas introducing means (6b) for introducing the reaction gas hasat least one gas pipe (61b) extending in a direction wherein the targets are arranged in parallel. The gas pipe is arranged on the rear side of the targets by being spaced apart from the targets which are arranged in parallel, and is provided with a jetting port (610) for jetting the reaction gas toward the targets.
PCT/JP2008/057894 2007-05-01 2008-04-24 Sputtering apparatus and sputtering method WO2008136337A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800118311A CN101657562B (en) 2007-05-01 2008-04-24 Sputtering apparatus and sputtering method
KR1020097021361A KR101050121B1 (en) 2007-05-01 2008-04-24 Sputtering Device and Sputtering Method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007120708A JP4707693B2 (en) 2007-05-01 2007-05-01 Sputtering apparatus and sputtering method
JP2007-120708 2007-05-01

Publications (1)

Publication Number Publication Date
WO2008136337A1 true WO2008136337A1 (en) 2008-11-13

Family

ID=39943448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057894 WO2008136337A1 (en) 2007-05-01 2008-04-24 Sputtering apparatus and sputtering method

Country Status (5)

Country Link
JP (1) JP4707693B2 (en)
KR (1) KR101050121B1 (en)
CN (1) CN101657562B (en)
TW (1) TWI433949B (en)
WO (1) WO2008136337A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5975653B2 (en) * 2011-01-25 2016-08-23 Hoya株式会社 Sputtering apparatus for manufacturing mask blank, method for manufacturing mask blank for display apparatus, and method for manufacturing mask for display apparatus
JP5721815B2 (en) * 2011-04-12 2015-05-20 株式会社アルバック Target and target manufacturing method
KR20120130518A (en) * 2011-05-23 2012-12-03 삼성디스플레이 주식회사 Separated target apparatus for sputtering and sputtering method using the same
JP5875462B2 (en) * 2012-05-21 2016-03-02 株式会社アルバック Sputtering method
AT513190B9 (en) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Apparatus and method for plasma coating a substrate, in particular a press plate
JP6196078B2 (en) * 2012-10-18 2017-09-13 株式会社アルバック Deposition equipment
JP6251588B2 (en) * 2014-02-04 2017-12-20 株式会社アルバック Deposition method
CN106103787B (en) * 2014-03-18 2019-06-28 应用材料公司 Process gas segmentation for static reaction sputtering
JP7007457B2 (en) * 2018-03-16 2022-01-24 株式会社アルバック Film formation method
KR102395512B1 (en) 2020-07-16 2022-05-09 제이엔티(주) Self Safe braking motor-driven elderly walking assist device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193870A (en) * 1989-12-25 1991-08-23 Matsushita Electric Ind Co Ltd Low-gas-pressure sputtering device
JPH05239634A (en) * 1991-12-11 1993-09-17 Leybold Ag Cathode sputtering apparatus
JP2005290550A (en) * 2004-03-11 2005-10-20 Ulvac Japan Ltd Sputtering apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2443972Y (en) * 2000-08-18 2001-08-22 深圳威士达真空系统工程有限公司 Air feeding device of reacted gas in equipment for intermediate frequency sputter coating reaction
JP4580781B2 (en) * 2004-03-19 2010-11-17 株式会社アルバック Sputtering method and apparatus
JP4922581B2 (en) * 2005-07-29 2012-04-25 株式会社アルバック Sputtering apparatus and sputtering method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193870A (en) * 1989-12-25 1991-08-23 Matsushita Electric Ind Co Ltd Low-gas-pressure sputtering device
JPH05239634A (en) * 1991-12-11 1993-09-17 Leybold Ag Cathode sputtering apparatus
JP2005290550A (en) * 2004-03-11 2005-10-20 Ulvac Japan Ltd Sputtering apparatus

Also Published As

Publication number Publication date
TW200920868A (en) 2009-05-16
KR20090122383A (en) 2009-11-27
JP2008274366A (en) 2008-11-13
CN101657562B (en) 2011-05-11
TWI433949B (en) 2014-04-11
CN101657562A (en) 2010-02-24
JP4707693B2 (en) 2011-06-22
KR101050121B1 (en) 2011-07-19

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