JP5975653B2 - Sputtering apparatus for manufacturing mask blank, method for manufacturing mask blank for display apparatus, and method for manufacturing mask for display apparatus - Google Patents

Description

The present invention relates to a large mask blank (for a display device) which is an original plate of a large mask (a mask for a display device) used for manufacturing parts of a display device such as a color filter or a thin film transistor (TFT) substrate used in a liquid crystal display panel or the like. The present invention relates to a manufacturing method of a mask blank), a sputtering apparatus suitably used for manufacturing the mask blank, and a manufacturing method of a mask for a display device using the mask blank.
Furthermore, large-sized masks of multiple types of substrate sizes, which are the masters of large-sized masks (masks for display devices) used for manufacturing parts of display devices such as color filters and thin film transistor (TFT) substrates used in liquid crystal display panels, etc. The present invention relates to a method for manufacturing a blank (mask blank for display device), a sputtering apparatus suitably used for manufacturing the mask blank, and a method for manufacturing a mask for display device using the mask blank.

In general, in a manufacturing process of a semiconductor device, a fine pattern is formed using a photolithography method. Also, a number of substrates called photomasks (transfer masks) are usually used for forming this fine pattern. This transfer mask is generally provided with a fine pattern made of a metal thin film on a translucent glass substrate, and the photolithographic method is also used in the production of this transfer mask.

 In manufacturing a transfer mask by photolithography, a mask blank having a thin film (for example, a light shielding film) for forming a transfer pattern (mask pattern) on a light-transmitting substrate such as a glass substrate is used. In the manufacture of a transfer mask using this mask blank, an exposure process for drawing a desired pattern on the resist film formed on the mask blank, and developing the resist film in accordance with the desired pattern drawing, the resist pattern is developed. The development step is formed, the etching step is to etch the thin film in accordance with the resist pattern, and the step is to remove and remove the remaining resist pattern. In the developing step, a desired pattern is drawn on the resist film formed on the mask blank, and then a developing solution is supplied to dissolve a portion of the resist film that is soluble in the developing solution, thereby forming a resist pattern. . In the etching step, the resist pattern is used as a mask to dissolve the exposed portion of the thin film on which the resist pattern is not formed by dry etching or wet etching, thereby forming a desired mask pattern on the light-transmitting substrate. Form. Thus, a transfer mask is completed.

  By the way, the transfer mask is used not only for manufacturing a semiconductor device but also for manufacturing a part of a display device such as a color filter or a thin film transistor (TFT) substrate used in a liquid crystal display panel. In recent years, large-scale mask blanks, which are the masters of large-scale masks used in the manufacture of these components, have been seen in the trend toward large-size and high-quality liquid crystal display panels and the appearance of three-dimensional (3D) liquid crystal display devices. The requirements for characteristics such as defect quality and in-plane uniformity of optical characteristics are becoming stricter.

  In Patent Document 1, even if it is a large substrate, it is aligned over at least a length corresponding to the entire width of the substrate so as to form a thin film having a uniform film thickness distribution perpendicular to the substrate transport direction. An in-line type sputtering apparatus composed of a plurality of target segments is disclosed. In Patent Document 2, a plurality of substrates arranged at predetermined intervals in a direction perpendicular to the moving direction of the substrate can be efficiently formed on a large substrate and the distribution of the film formation can be made uniform. An in-line type sputtering apparatus provided with a sputter cathode group consisting of a plurality of sputter cathodes is disclosed.

JP 2000-129436 A JP 2005-256032 A

  However, the present inventor has found that there are the following problems in the production of a large mask blank using an in-line type sputtering apparatus as disclosed in the above-mentioned prior literature.

  As described above, due to the recent increase in size and image quality of liquid crystal display panels and the like, the demand for the characteristics of large mask blanks is increasing. For example, regarding defect quality, defects with a size of 600 nm or more in the tenth generation There is an increasing demand for the absence of For example, specifically, it is considered practically preferable that the number of defects having a size of 1200 mm × 1400 mm and a size of 600 nm or more is 100 or less. In a conventional in-line type sputtering apparatus, a thin film is formed on the surface of a substrate while the substrate is transported in a predetermined direction with respect to a fixed target placed at a predetermined position facing the substrate in the film forming chamber. Dust generation by the substrate transfer means (movable part) in the chamber cannot be suppressed, and there is a limit to improving the defect quality. In addition, even in the case of a large substrate size, in-plane uniformity of optical characteristics such as film thickness distribution and reflectance variation is becoming stricter. In the case of a large mask blank, there are many types of substrate sizes, from 330 mm x 450 mm for small sizes to 1220 mm x 1400 mm or larger for large sizes, and optical characteristics for any of these many types of substrate sizes In-plane uniformity is required. For example, in a binary mask blank in which a light shielding film and an antireflection film are formed on a transparent substrate, the surface reflectance of the antireflection film is 15% or less (wavelength λ: 436 nm), and the in-plane variation is within ± 3%. Must be.

  In a gradation mask blank (also referred to as a gray tone mask) in which a semi-transparent film, a light-shielding film, and an antireflection film are formed on a transparent substrate, the exposure light transmittance of the semi-transparent film is 5 to 60%. (Wavelength λ: 365 nm to 436 nm), there has been a demand for strict optical property uniformity that the in-plane variation must be within ± 1%. In the in-line type sputtering apparatus as disclosed in the above-mentioned prior document, a plurality of targets are arranged in a direction orthogonal to the substrate transport direction, but film formation is performed while the substrate is transported on the plurality of targets. Therefore, the directionality of the particles from the target to the substrate is not constant, and there is a limit to improving the in-plane uniformity of optical characteristics, and it is difficult to obtain the strict quality required for large mask blanks. Met.

 Therefore, the present invention has been made to solve such a conventional problem, and the object of the present invention is firstly, even if it is a large-sized substrate, and for a plurality of types of substrate sizes. However, it is an object of the present invention to provide a mask blank manufacturing sputtering apparatus that can form a thin film having good defect quality and in-plane uniformity of optical characteristics.

A second object is to provide a method for manufacturing a mask blank for a display device that has good defect quality and good in-plane optical characteristics even in a large size.
A third object is to provide a method for manufacturing a large-sized mask for a display device with few pattern defects and good optical characteristics.

As a result of intensive studies to solve the above problems, the present inventor has completed the following present invention.
That is, in order to solve the above problems, the present invention has the following configuration.
(Configuration 1)
A sputtering apparatus for manufacturing a mask blank used when forming a thin film for forming a transfer pattern on a light-transmitting substrate, wherein the sputtering apparatus is for manufacturing at least one film forming chamber and the film forming chamber. A plurality of sputtering cathodes, a substrate holding means that is disposed opposite to the plurality of sputtering cathodes and holds the substrate so that the substrate is placed at a fixed position during film formation, and a sputtering gas passes between the plurality of sputtering cathodes. And a sputtering gas supply means provided so as to be supplied in the vicinity of the surface of the substrate.

  According to the first aspect of the invention, during film formation in the film formation chamber, the substrate is moved by the substrate holding means for holding the substrate so that the substrate is placed at a fixed position with respect to the sputtering target mounted on the sputtering cathode. Since the film formation is performed in a stationary state, no dust is generated by the substrate transfer means (movable part), so that the defect quality can be improved. In addition, since a plurality of sputtering cathodes are arranged opposite to the substrate and a sputtering gas supply means is provided so that the sputtering gas is supplied to the vicinity of the substrate surface through the plurality of sputtering cathodes. A thin film with good in-plane uniformity of optical characteristics can be formed for any size substrate and for a plurality of types of substrate sizes.

(Configuration 2)
The said sputtering cathode is opposingly arrange | positioned so that the to-be-sputtered surface of the sputtering target attached to the said substrate main surface in which the said thin film is formed in the said sputtering cathode may become parallel. It is a sputtering apparatus for mask blank manufacture.
As in the invention of Configuration 2, the sputtering cathode of the sputtering apparatus according to Configuration 1 is arranged so that the main surface of the substrate on which the thin film is formed is parallel to the sputtering target surface of the sputtering target attached to the sputtering cathode. Since there is no relative movement of the substrate with respect to the target, the particles struck from the sputtering target by the sputtering gas have relatively high rectilinearity because there are few obliquely incident particles as in in-line film formation, and the main surface of the substrate On the other hand, a thin film having a uniform grain growth direction is formed. Therefore, since the film density of the thin film deposited on the main surface of the substrate is increased and the film density is increased, the film thickness required to obtain a desired optical density can be reduced. And high pattern line width uniformity can be obtained.

(Configuration 3)
The sputtering apparatus for manufacturing a mask blank according to Configuration 1 or 2, wherein the number of the sputtering cathodes corresponding to a region including a plurality of substrate sizes is arranged.
As in the invention of Configuration 3, by arranging a number of sputtering cathodes corresponding to a region including a plurality of substrate sizes, a sputtering cathode and a sputtering target can be used for a large-sized substrate and according to a plurality of types of substrate sizes. It is possible to cope with a single sputtering apparatus, and it is possible to form a thin film with good in-plane uniformity of optical characteristics for these multiple types of substrate sizes. .

(Configuration 4)
4. The mask blank manufacturing sputtering apparatus according to claim 1, further comprising a power supply unit that can apply power to each of the plurality of sputtering cathodes independently. 5.
As in the invention of Configuration 4, by including power supply means that can apply power independently to each of the plurality of sputtering cathodes in the sputtering apparatus of Configuration 1, a plurality of types of substrate sizes and thin films to be deposited are provided. The optical properties of the thin film to be formed by controlling the power applied to each sputtering cathode according to the material, required optical properties, uniformity of optical properties, in-plane uniformity of film thickness, application, etc. It is possible to further improve the uniformity of.

(Configuration 5)
The substrate holding means is disposed so as to be positioned below the sputtering cathode, and supports the substrate by contacting a plurality of locations on the back surface opposite to the main surface of the substrate on which the film is formed, depending on the size of the plurality of substrates. The mask blank manufacturing sputtering apparatus according to any one of Structures 1 to 4, further comprising: a substrate supporting unit that performs the above and a lifting unit that lifts and lowers the substrate supporting unit.
As in the invention of the configuration 5, the substrate holding means in the mask blank manufacturing sputtering apparatus of the configuration 1 is disposed so as to be positioned below the sputtering cathode, and the substrate is formed in accordance with a plurality of substrate sizes. A plurality of substrate sizes and weights, such as a mask blank for a display device, by using a substrate supporting means for supporting the substrate in contact with a plurality of positions on the back surface opposite to the main surface and a lifting means for raising and lowering the substrate supporting means. It is not necessary to prepare a substrate holder corresponding to the substrate size used when forming a film with a conventional in-line type sputtering apparatus.

(Configuration 6)
Sputtering cathode moving means for moving the plurality of sputtering cathodes in a plane parallel to the substrate main surface on which the thin film of the translucent substrate is formed according to a plurality of types of substrate sizes. It is a sputtering apparatus for mask blank manufacture as described in any one of the structures 1 thru | or 5 characterized by the above-mentioned.
As in the invention of Configuration 6, by providing a sputtering cathode moving means for moving a plurality of sputtering cathodes in a plane parallel to the main surface of the substrate in accordance with a plurality of types of substrate sizes, a plurality of types of sputtering cathodes are provided. Since it is possible to form a thin film without the need to prepare sputtering targets of different sizes corresponding to the substrate size, it is possible to reduce the manufacturing cost and to form a thin film with excellent in-plane optical characteristics. it can.

(Configuration 7)
In the sputtering cathode, a plurality of cathode units constituting a sputtering cathode arranged in the X-axis direction are arranged in the Y-axis direction, and the sputtering cathode moving means includes a plurality of sputtering cathodes in the cathode unit. The sputtering for mask blank production according to Configuration 6, comprising: X-axis direction moving means for moving the cathode in the X-axis direction; and Y-axis direction moving means for moving the cathode unit in the Y-axis direction. Device.
As in the invention of Configuration 7, in the sputtering cathode of the sputtering apparatus according to Configuration 6, a plurality of cathode units constituting a plurality of sputtering cathodes arranged in the X-axis direction are arranged side by side in the Y-axis direction, The sputtering cathode moving means is adjusted to a substrate size by an X-axis direction moving means for moving a plurality of sputtering cathodes in the cathode unit in the X-axis direction and a Y-axis direction moving means for moving the cathode unit in the Y-axis direction. Therefore, since the position controllability of each sputtering cathode according to the substrate size is good and the drive system for moving each sputtering cathode is small, dust generation is small and defect quality can be improved. .

(Configuration 8)
8. The mask blank manufacturing method according to claim 7, wherein the sputtering cathode and / or the cathode unit includes a Z-axis direction moving means capable of moving in a direction perpendicular to a main surface of the translucent substrate. It is a sputtering device.
As in the invention of Structure 8, each sputtering cathode and / or cathode unit includes a Z-axis direction moving means that can move in a direction perpendicular to the main surface of the light-transmitting substrate. In order to improve the in-plane film thickness uniformity of the thin film formed on the main surface of the substrate, the distance between the sputtering target mounted on each sputtering cathode and the translucent substrate can be controlled. It is possible to further improve the uniformity of the optical characteristics.

(Configuration 9)
The X-axis direction moving means is provided with transmission means for moving each sputtering cathode corresponding to the plurality of sputtering cathodes in the cathode unit, and the transmission means is supplied with power from the power supply means to the sputtering cathode. 8. The mask blank manufacturing sputtering apparatus according to configuration 7, wherein a conductive means for conducting electric power is provided.
As in the ninth aspect of the invention, since the transmission means for moving each sputtering cathode is provided with conduction means for conducting power from the power supply means to each sputtering cathode, the sputtering apparatus can be simplified.

(Configuration 10)
The substrate holding means is disposed so as to be located on the same side as the sputtering cathode, and is configured to contact a plurality of locations on the main surface of the substrate on which the film is formed and to support the substrate above the sputtering cathode. The mask according to any one of Structures 1 to 9, wherein the mask is provided below the sputtering cathode so as to face the substrate main surface. It is a sputtering apparatus for blank manufacture.
As in the tenth aspect of the invention, the substrate holding means is a substrate supporting means that is arranged to be located on the same side as the sputtering cathode and supports the substrate in contact with a plurality of positions on the main surface of the substrate on which the film is formed. In addition, since the sputtering gas supply means is disposed below the sputtering cathode in correspondence with the main surface of the substrate, the sputtering gas introduced into the film forming chamber by the sputtering gas supply means is not drawn around the substrate. Since it is drawn from the side of each sputtering cathode, the flow of sputtering gas with respect to the substrate becomes uniform, and the uniformity of the optical characteristics of the thin film becomes good.

(Configuration 11)
The substrate holding means is disposed on the same side as the sputtering cathode, and contacts a plurality of locations on the main surface of the substrate on which the film is formed in accordance with a plurality of substrate sizes, and above the sputtering cathode. Substrate supporting means configured to support the substrate is provided, and the sputtering gas supply means is disposed below the sputtering cathode so as to face the main surface of the substrate. It is a sputtering device for mask blank manufacture as described in any one of these.
As in the invention of constitution 11, the substrate holding means is disposed so as to be located on the same side as the sputtering cathode, and the substrate is brought into contact with a plurality of locations on the main surface of the substrate to be formed according to the plurality of substrate sizes. By using a supporting substrate supporting means, it can be used for a plurality of substrates with different sizes and weights, such as a mask blank for a display device, and used when forming a film with a conventional in-line sputtering apparatus. There is no need to prepare a substrate holder according to the size of the substrate. Further, since the sputtering gas supply means is disposed below the sputtering cathode corresponding to the main surface of the substrate, the sputtering gas introduced into the film forming chamber by the sputtering gas supply means is not drawn around the substrate, Since the sputtering gas is drawn from the side of the sputtering cathode, the flow of the sputtering gas with respect to the substrate becomes uniform, and the uniformity of the optical characteristics of the thin film is improved.

(Configuration 12)
A method of manufacturing a mask blank for a display device, comprising: forming a thin film for forming a transfer pattern on a light-transmitting substrate using the sputtering apparatus according to any one of configurations 1 to 11. is there.
According to the invention of Configuration 12, since the sputtering gas is supplied in the vicinity of the substrate surface through a plurality of sputtering targets provided facing the substrate, the sputtering gas supplied to the substrate surface Since no distribution flow occurs, as a result, it is possible to obtain a mask blank with good in-plane uniformity of optical characteristics even for a large-sized substrate such as a mask blank for a display device. In addition, during film formation, since the substrate is not moved relative to the sputtering target so that the substrate and the sputtering target are in a fixed positional relationship, the film is formed in a stationary state. A mask blank can be obtained.

(Configuration 13)
A manufacturing method of a mask blank for a display device, wherein a thin film for forming a transfer pattern is formed on a translucent substrate to manufacture a mask blank, wherein the thin film is provided to face the substrate. A plurality of sputtering targets are formed by sputtering with a sputtering gas, and at the time of film formation, the substrate and the sputtering target are formed in a certain positional relationship, and the sputtering gas is It is a manufacturing method of a mask blank for a display device, characterized in that it passes between the plurality of sputtering targets and is supplied in the vicinity of the surface of the substrate.
According to the invention of Configuration 13, since the sputtering gas is supplied in the vicinity of the substrate surface through a plurality of sputtering targets provided facing the substrate, the sputtering gas supplied to the substrate surface Since no distribution flow occurs, as a result, it is possible to obtain a mask blank with good in-plane uniformity of optical characteristics even for a large-sized substrate such as a mask blank for a display device. In addition, during film formation, since the substrate is not moved relative to the sputtering target so that the substrate and the sputtering target are in a fixed positional relationship, the film is formed in a stationary state. A mask blank can be obtained.

(Configuration 14)
14. The method of manufacturing a mask blank for a display device according to the structure 12 or 13, wherein the thin film is a light shielding film, a semi-transparent film, or a laminated film in which a semi-transparent film and a light shielding film are provided in this order. is there.
As in the invention of Configuration 14, as a thin film for forming a transfer pattern on a light-transmitting substrate, a binary mask blank having a light-shielding film, a phase shift mask blank having a semi-light-transmitting film, or a photomask blank It is suitable for manufacturing a mask blank for a display device such as a gradation mask blank in which a laminated film of a semi-transparent film and a light shielding film is formed in this order.

(Configuration 15)
A method for manufacturing a mask for a display device, comprising: patterning the thin film of the mask blank obtained by the method for manufacturing a mask blank for a display device according to any one of Structures 12 to 14 to form a transfer pattern. is there.
The thin film is patterned using a mask blank having good defect quality and good in-plane optical property uniformity obtained by the method for manufacturing a mask blank for a display device according to any one of Structures 12 to 14. By forming the transfer pattern, a large-sized mask for a display device with few pattern defects and good optical characteristics can be obtained.

According to the sputtering apparatus of the present invention, a thin film having a good defect quality and a good in-plane uniformity of optical characteristics, even for a large-sized substrate and for a plurality of types of substrate sizes. Can be formed.
In addition, according to the method for manufacturing a mask blank for a display device according to the present invention, it is possible to obtain a mask blank having good defect quality and good in-plane uniformity of optical characteristics even with a large size.

In addition, according to the method for manufacturing a mask for a display device according to the present invention, the defect quality is good, and the mask blank according to the present invention with good in-plane uniformity of optical characteristics is used, so that there are few pattern defects.
A large-sized mask for a display device with good optical characteristics can be obtained.

It is the whole schematic block diagram concerning one embodiment of the sputtering device for mask blank manufacture of the present invention. It is a figure which shows the arrangement | positioning relationship of the several sputtering cathode with respect to the board | substrate in the film-forming chamber in the sputtering device for mask blank manufacture which is 1st embodiment of this invention. (A) And (b) is a figure which shows the structure of the sputtering gas supply means in the sputtering apparatus for mask blank manufacture which is 1st embodiment of this invention, respectively, and a board | substrate holding means. It is a figure which shows the sputtering gas supply flow path in the sputtering device for mask blank manufacture which is 1st embodiment of this invention. (A) And (b) is a figure which shows arrangement | positioning of the sputtering target in the case of mounting | wearing with the sputtering target of a different material to a some sputtering cathode, respectively. (A) It is a figure which shows the arrangement | positioning relationship of the several sputtering cathode with respect to the large sized substrate in the film-forming chamber in the sputtering apparatus for mask blank manufacture which is 2nd embodiment of this invention. (B) It is a figure which shows the arrangement | positioning relationship of the some sputtering cathode with respect to the medium-sized board | substrate in the film-forming chamber in the sputtering apparatus for mask blank manufacture which is 2nd embodiment of this invention. It is a figure which shows the structure of the sputtering gas supply means in the sputtering apparatus for mask blank manufacture which is 2nd embodiment of this invention, and a board | substrate holding means. It is a figure which shows the X-axis direction moving means and Y-axis direction moving means in the sputtering apparatus for mask blank manufacture which is 2nd embodiment of this invention. It is a figure which shows the detailed structure of the X-axis direction moving means in the sputtering apparatus for mask blank manufacture which is 2nd embodiment of this invention. (A) And (b) is a figure which shows the structure of the sputtering apparatus for mask blank manufacture of this invention used when manufacturing the mask blank of Example 6. FIG. It is a figure which shows the Y-axis direction moving means in the sputtering device for mask blank manufacture of FIG. It is a figure which shows other embodiment in the sputtering device for mask blank manufacture of this invention. It is sectional drawing which shows the manufacturing process of a gradation mask. (A) And (b) is a figure which shows the structure of the sputtering apparatus for mask blank manufacture of this invention used when manufacturing the mask blank of Example 3. FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[First invention (first embodiment)]
First, the mask blank manufacturing sputtering apparatus of this invention is demonstrated.
FIG. 1 is an overall schematic configuration diagram according to an embodiment of the sputtering apparatus of the present invention.
The sputtering apparatus shown in FIG. 1 is a multi-chamber type (cluster type) sputtering apparatus. As its configuration, a plurality (three in FIG. 1) of film forming chambers 2A, 2B, and 2C are connected to each other through the open / close gates (gate valves) 3A, 3B, and 3C around the transfer chamber 1. The transfer chamber 1 is connected to a decompression chamber (not shown) for loading and unloading substrates via an open / close gate (gate valve) 4.

  In the case of the sputtering apparatus having such a configuration, first, a substrate placed in the atmosphere (air in a clean room) is carried into the decompression chamber in which the room is open to the atmosphere, and then vacuum decompression of the decompression chamber is performed. Next, the open / close gates 4 and 3A, which have been closed so far, are opened, and the substrate is transferred from the decompression chamber into the transfer chamber 1 where the pressure is reduced to a predetermined degree of vacuum by a transfer device (transfer robot) (not shown). Then, it is carried through the transfer chamber 1 and loaded into the first film forming chamber 2A, which is also evacuated to a predetermined degree of vacuum. Here, the open / close gates 3A and 4 are closed again. Thereafter, a film forming gas (sputtering gas) is introduced into the film forming chamber 2A, discharge is started when a predetermined gas pressure is reached, and a thin film for pattern formation is formed on the substrate by sputtering. .

If the thin film for pattern formation is composed of a plurality of layers and can be formed with the same sputtering target, after the first layer is formed, the substrate is left in the film formation chamber 2A, and the second and subsequent layers are formed. Form a film. Further, when there are a plurality of pattern forming thin films and the second and subsequent layers need to be formed with different sputtering targets, the film formation is performed in another film forming chamber 2B, for example. In this case, the open / close gates 3A and 3B are opened, the substrate is taken out from the film forming chamber 2A by the transfer device, and is loaded into and installed in the film forming chamber 2B that is vacuum-depressed to a predetermined vacuum degree via the transfer chamber 1. . Here, the open / close gates 3B and 3A are closed. Thereafter, a film forming gas (sputtering gas) is introduced into the film forming chamber 2B, discharge is started when a predetermined gas pressure is reached, and the second and subsequent layers are formed by sputtering.
The second and subsequent layers of the pattern forming thin film may be formed in the same manner using another film forming chamber 2C.

When all the pattern forming thin films to be formed are thus formed, the open / close gate 4 of the decompression chamber (not shown) and the open / close gate of the film forming chamber where the substrate is installed at that time are opened. The substrate is taken out from the film forming chamber by the transfer device, and is transferred to the decompression chamber via the transfer chamber 1 (unloading 6). Then, the decompression chamber is opened to the atmosphere, and the substrate (mask blank on which the pattern forming thin film is formed) is taken out.
As described above, the thin film for pattern formation is formed by sputtering using the sputtering apparatus shown in FIG.

  FIG. 2 is a diagram showing the arrangement relationship of a plurality of sputtering cathodes with respect to the substrate in the film forming chamber in the mask blank manufacturing sputtering apparatus according to the first embodiment of the present invention. FIGS. 3A and 3B are diagrams showing the configuration of the gas supply means and the substrate holding means in the mask blank manufacturing sputtering apparatus according to the first embodiment of the present invention.

  As shown in FIG. 2 and FIGS. 3A and 3B, in the sputtering apparatus of the present invention, a plurality of sputtering cathodes 7 arranged to face the substrate 10 in the film formation chamber (for example, 2A),. Between the sputtering cathodes 7 which are the sputtering gas supply means 9 so that the sputtering gas passes between the plurality of sputtering cathodes 7... And is supplied to the vicinity of the surface of the substrate 10. At least one sputtering gas introduction pipe 91 for one sputtering cathode, and the sputtering gas introduced by the sputtering gas introduction pipe 91 is supplied to the vicinity of the surface of the substrate 10 so that the substrate 10 is sandwiched between them. A turbo molecular pump (TMP) 92 is provided on the back side. Each sputtering cathode 7 is provided with a sputtering shield 75 so as to surround the sputtering target 8 when the sputtering target 8 is mounted on the sputtering cathode 7. When forming a thin film using the sputtering apparatus of the present invention, a sputtering target 8 is attached to each of the plurality of sputtering cathodes 7. In addition, the sputtering apparatus of the present invention is positioned below the sputtering cathode 7 so that the film formation is performed while the substrate 10 is stationary without moving in the film formation chamber during film formation. A substrate support means 95 is provided that supports the substrate 10 in contact with a plurality of locations on the back surface opposite to the main surface of the substrate on which the film is to be formed, according to the plurality of substrate sizes. The substrate support means 95 includes elevating means (not shown) so as to contact at least the outer edge portion of the back surface of the substrate according to the substrate size. When depositing a thin film on a relatively large substrate size, the substrate support means 95 located inside the back surface of the substrate is lowered to a distance away from the substrate by the lifting means so as not to contact the back surface of the substrate. Like that. Note that the substrate support means 95 may be in contact with the inside of the back surface of the substrate that does not affect the transfer of the display device. Further, the substrate supporting means 95 may be detachably attached according to the substrate size without providing the lifting / lowering means. By changing the height of the substrate support means 95, the distance between the substrate 10 and the sputtering target 8 attached to the sputtering cathode 7 can be easily adjusted.

  The sputtering cathode 7 is arranged so as to face the main surface of the substrate 10 on which the thin film is formed and the surface to be sputtered of the sputtering target 8 attached to the sputtering cathode 7 in parallel. Since the substrate main surface and the sputtering target surface of the sputtering target 8 are arranged so as to be parallel to each other, the particles struck from the sputtering target 8 by the sputtering gas have high straightness, and the particles are larger than the substrate main surface. A thin film with uniform growth is formed. Therefore, since the film density of the thin film deposited on the main surface of the substrate is increased and the film density is increased, the film thickness required to obtain a desired optical density can be reduced. And high line width uniformity can be obtained.

  The sputtering cathode 7 is preferably provided with a number of sputtering cathodes corresponding to a region including a plurality of substrate sizes. For example, in FIG. 2, the size (region) of the maximum size substrate on which the sputter deposition is performed is indicated by a broken line S. For example, the region of the maximum size substrate corresponding to the size of the maximum size substrate is shown. It is preferable to arrange a number of sputtering cathodes 7 sufficient to cover. As a result, even a large-sized substrate and a plurality of types of substrate sizes can be handled by a single sputtering apparatus (or a single film formation chamber). On the other hand, a thin film with good in-plane uniformity of optical characteristics can be formed.

  In the present invention, the plurality of sputtering cathodes 7,... Are arranged at a constant interval or close to each other in consideration of the target interval between the sputtering targets 8 mounted on each cathode. Although at least the film forming gas passes between these cathodes and is supplied to the vicinity of the surface of the substrate 10 from a direction substantially perpendicular to the substrate surface, as indicated by an arrow g in FIG. It has at least the necessary gap.

  The distance (distance) between the sputtering target 8 mounted on the sputtering cathode 7 and the substrate 10 facing each other mainly depends on the size of the sputtering target 8. In the case of small and large sizes, the interval can be increased. In the sputtering apparatus of the present invention, although it depends on the size of the sputtering target 8 as described above, the distance between the sputtering target 8 and the substrate 10 is usually preferably in the range of about 30 mm to 400 mm.

  In addition, the sputtering apparatus of the present invention preferably includes a power supply means that can apply power independently to each of the plurality of sputtering cathodes 7. Control the power applied to each sputtering cathode according to multiple types of substrate sizes, thin film materials to be deposited, required optical characteristics, uniformity of optical characteristics, in-plane uniformity of film thickness, application, etc. By performing (including ON / OFF), it becomes possible to further improve the uniformity of the optical characteristics of the thin film to be formed.

Further, the sputtering target 8 made of the same material may be attached to each of the plurality of sputtering cathodes 7..., Or a sputtering target 8 made of a different material may be attached. By alternately mounting two different kinds of sputtering targets on each sputtering cathode 7 (that is, every other same material), it is possible to use different deposition materials without changing the target using one film forming chamber. A laminated film (for example, a laminated film of a MoSi semitranslucent film and a Cr light shielding film) can be formed. For example, as an example of mounting a sputtering target of a different material, as shown in FIG. 5A, when the material of the thin film to be formed is MoSi, the Si sputtering target 81 and the MoSi ₂ sputtering target 82 can be used. . Moreover, as an example in the case of laminating | stacking the laminated film of a different material, it can be set as the Cr sputtering target 83 and the MoSix sputtering target 84 as shown in FIG.5 (b).

  According to the sputtering apparatus of the present invention, since the substrate holding means for holding the substrate so as to be disposed at a fixed position with respect to the sputtering target mounted on the sputtering cathode during film formation, Since the film formation is performed in a state where the substrate does not move and is stationary with respect to the sputtering target, the generation of dust by the substrate transfer means (movable part) does not occur, so that the defect quality can be improved. In addition, the sputtering apparatus of the present invention includes a sputtering gas supply means that disposes a plurality of sputtering cathodes facing the substrate and supplies a sputtering gas in the vicinity of the substrate surface through the plurality of sputtering cathodes. Therefore, the deposition gas is supplied to the entire substrate surface from a direction substantially perpendicular to the substrate surface, and the distribution flow of the sputtering gas supplied to the substrate surface does not occur. In addition, a thin film with excellent in-plane optical characteristics can be formed for a plurality of types of substrate sizes.

[First Invention (Second Embodiment)]
A mask blank manufacturing sputtering apparatus according to the second embodiment of the present invention will be described. In addition, about the structure which overlaps with the sputtering apparatus for mask blank manufacture concerning 1st embodiment demonstrated above, hereafter, it demonstrates using the same name and code | symbol.

FIG. 6A is a diagram showing the positional relationship of a plurality of sputtering cathodes with respect to a large substrate in a film forming chamber in a mask blank manufacturing sputtering apparatus according to the second embodiment of the present invention, and FIG. FIG. 5 is a diagram showing a positional relationship of a plurality of sputtering cathodes with respect to a medium-sized substrate in a film forming chamber in a mask blank manufacturing sputtering apparatus according to a second embodiment of the present invention. FIG. 7 is a diagram showing the configuration of the sputtering gas supply means and the substrate holding means in the sputtering apparatus for manufacturing a mask blank according to the second embodiment of the present invention, and FIG. 8 is for manufacturing the mask blank of the present invention. It is a figure which shows the X-axis direction moving means and Y-axis direction moving means in a sputtering device. In addition, FIG.
It is a figure which shows the detailed structure of the X-axis direction moving means in the sputtering apparatus for mask blank manufacture which is 2nd embodiment of this invention.

  As shown in FIGS. 6 and 7, the sputtering apparatus for manufacturing a mask blank of the present invention includes a plurality of sputtering cathodes 7,... Disposed facing the substrate S in the film forming chamber (for example, 2A). ing. Further, a sputtering gas supply means 9 is provided so that the sputtering gas is supplied to the vicinity of the surface of the substrate S through the plurality of sputtering cathodes 7... Opposite to the surface of the substrate on which the thin film is formed, the substrate is disposed below each of the sputtering cathodes 7. Below each sputtering cathode 7, at least one sputtering gas introduction tube 91 for each sputtering cathode, and sputtering. A turbo molecular pump 92 is provided in the lower part of the film formation chamber so that the sputtering gas introduced by the gas introduction pipe 91 is supplied to the vicinity of the surface of the substrate S. When forming a thin film using the sputtering apparatus of the present invention, a sputtering target 8 is attached to each of the plurality of sputtering cathodes 7. A sputtering shield 75 is provided so as to surround the sputtering target 8 when the sputtering target 8 is attached to each sputtering cathode 7.

  Further, the sputtering apparatus of the present invention is positioned on the same side as the sputtering cathode 7 so that the film formation is performed in a stationary state without moving the substrate S in the film formation chamber during film formation. And a substrate support means 95 for supporting the substrate S above the sputtering cathode 7 in contact with a plurality of locations on the main surface of the substrate on which the film is formed, according to a plurality of substrate sizes. The substrate support means 95 is provided with lifting / lowering means (not shown) so as to contact at least the outer edge of the main surface of the substrate according to the substrate size. When depositing a thin film on a relatively large substrate size, the substrate support means 95 positioned inside the main surface of the substrate is moved up to a distance away from the substrate by the elevating means so as not to contact the main surface of the substrate. Try to descend. The substrate support means 95 may be in contact with the inside of the main surface of the substrate that does not affect the transfer of the display device. Further, the substrate supporting means 95 may be detachably attached according to the substrate size without providing the lifting / lowering means. By changing the height of the substrate support means 95, the distance between the substrate S and the sputtering target 8 mounted on the sputtering cathode 7 can be easily adjusted.

  Further, the sputtering apparatus of the present invention moves the plurality of sputtering cathodes 7,... In a plane parallel to the main surface of the substrate on which the thin film of the substrate S is formed according to a plurality of types of substrate sizes. Sputtering cathode moving means is provided. Referring to FIGS. 7 and 8, the plurality of sputtering cathodes 7,... Arranged in the film forming chamber are the cathode units 30 constituting the sputtering cathodes 7 arranged in the X-axis direction. Are arranged side by side in the Y-axis direction. The sputtering cathode moving means includes an X-axis direction moving means for moving the plurality of sputtering cathodes 7 in the cathode unit 30 in the X-axis direction, and a Y-axis direction moving means for moving the cathode unit 30 in the Y-axis direction. I have. The X-axis direction can be a direction parallel to the short side of the substrate, and the Y-axis direction can be a direction parallel to the long side of the substrate. Further, the X-axis direction can be a direction parallel to the long side of the substrate, and the Y-axis direction can be a direction parallel to the short side of the substrate.

Further, the X-axis direction moving means will be described with reference to FIG.
The X-axis direction moving means is provided with a shaft member 31 that is a transmission means for moving each (individual) sputtering cathode 7 corresponding to the plurality of sputtering cathodes in the cathode unit 30. The engaging member 33 attached under each sputtering cathode 7 engages (threads) with the irregularities threaded on the surface of the shaft member 31 and guides provided under the shaft member 31. The rail 34 is also engaged. A cathode driving motor 35 is attached to one end of the shaft member 31 for rotationally driving it. When the cathode driving motor 35 is driven by the AC power source 36, the shaft member 31 rotates, and the engaging member 33 engaged therewith moves, so that the sputtering cathode 7 in the cathode unit 30 also simultaneously rotates the X axis. Move in the direction.

  The Y-axis direction moving means includes two parallel cathode unit transport rails 32 and 32 arranged along the Y-axis direction at both ends of the cathode unit 30, and for driving the cathode unit 30. And a driving motor 37. When the cathode unit drive motor 37 is driven by a power source (not shown), the cathode unit 30 moves on the cathode unit transport rail 32 in the Y-axis direction.

  As described above, the sputtering cathode moving means having the X-axis direction moving means and the Y-axis direction moving means moves the sputtering cathodes 7 arranged in the cathode unit 30 in the X-axis direction. By moving the cathode unit 30 in the Y-axis direction, the plurality of sputtering cathodes 7 in the cathode unit 30 can be moved in the Y-axis direction for each cathode unit 30.

  FIG. 6 (a) described above shows the positional relationship of the plurality of sputtering cathodes 7,... With respect to the large substrate S in the film forming chamber 2A, and FIG. 6 (b) shows the small and medium substrates in the film forming chamber 2A. The arrangement | positioning relationship of several sputtering cathode 7, ... with respect to S is shown. Since the sputtering apparatus according to the second embodiment of the present invention includes such a sputtering cathode moving means, a thin film can be formed without the need to prepare sputtering targets of different sizes corresponding to a plurality of types of substrate sizes. Can be membrane.

  In the sputtering apparatus according to the second embodiment of the present invention, power can be applied independently to each of the plurality of sputtering cathodes 7..., As in the first embodiment described above. It is preferable to provide power supply means. Control the power applied to each sputtering cathode according to multiple types of substrate sizes, thin film materials to be deposited, required optical characteristics, uniformity of optical characteristics, in-plane uniformity of film thickness, application, etc. By performing (including ON / OFF), it becomes possible to further improve the uniformity of the optical characteristics of the thin film to be formed.

  In the configuration shown in FIG. 9, the X-axis direction moving means in the sputtering cathode moving means is provided with a shaft member 31 that is a transmission means for moving each sputtering cathode 7 in the cathode unit 30. The shaft member 31 serving as the transmission means is provided with conduction means for conducting power from the power supply means (sputtering power source) 38 to the sputtering cathode 7. Specifically, the cathode potential cable 39 from the power supply means 38 is wired to the sputtering cathode 7 via the shaft member 31 and the anode potential cable 40 via the guide rail 34 to the sputtering cathode 7. The power is supplied from the power supply means 38. As described above, since the transmission means for moving each sputtering cathode 7 is provided with the conduction means for conducting the electric power from the power supply means in each sputtering cathode 7, the sputtering apparatus can be simplified.

  Similarly to the first embodiment described above, in each of the sputtering cathodes 7, the main surface of the substrate S on which the thin film is formed and the surface to be sputtered of the sputtering target 8 attached to the sputtering cathode 7 are parallel to each other. Thus, it is preferable to arrange so as to face each other. In the sputtering apparatus of the present invention, since the sputtering cathode moving means for moving the sputtering cathode 7 in a plane parallel to the main surface of the substrate is provided, the main surface of the substrate and the surface to be sputtered of the sputtering target 8 are parallel. It can be easily realized to be arranged opposite to each other.

  In this manner, the substrate main surface and the sputtering target 8 are arranged so as to face each other so that the surface to be sputtered is parallel, so that the particles struck from the sputtering target 8 by the sputtering gas have high straightness and A thin film with uniform grain growth is formed. Therefore, since the film density of the thin film deposited on the main surface of the substrate is increased and the film density is increased, the film thickness required to obtain a desired optical density can be reduced. And high line width uniformity can be obtained.

  The sputtering cathode 7 is preferably provided with a number of sputtering cathodes corresponding to a region including a plurality of substrate sizes. For example, in FIG. 6, the size (region) of the maximum size substrate on which the sputter deposition is performed is indicated by a broken line S. For example, the region of the maximum size substrate corresponding to the size of the maximum size substrate is shown. It is preferable to arrange a number of sputtering cathodes 7 sufficient to cover. In the sputtering apparatus of the second embodiment of the present invention, since the sputtering cathode moving means is provided, the number of sputtering cathodes 7 in consideration of the movable distance of the sputtering cathode 7 by the sputtering cathode moving means is arranged. be able to.

  Further, as in the first embodiment described above, the distance (distance) between the sputtering target 8 mounted on the sputtering cathode 7 and the substrate 10 facing each other mainly depends on the size of the sputtering target 8. In the case of a small size sputtering target, the interval can be reduced, and in the case of a large size, the interval can be increased. In the sputtering apparatus of the present invention, although it depends on the size of the sputtering target 8 as described above, the distance between the sputtering target 8 and the substrate 10 is usually preferably in the range of about 30 mm to 400 mm.

Similarly to the first embodiment described above, a sputtering target 8 made of the same material may be attached to each of the plurality of sputtering cathodes 7..., Or a sputtering target 8 made of a different material may be attached. You can also By alternately mounting two different kinds of sputtering targets on each sputtering cathode 7 (that is, every other same material), it is possible to use different deposition materials without changing the target using one film forming chamber. A laminated film (for example, a laminated film of a MoSi semitranslucent film and a Cr light shielding film) can be formed. For example, as an example of mounting a sputtering target of a different material, when the material of the thin film to be formed is MoSi, it can be a Si sputtering target and a MoSi ₂ sputtering target. Further, examples of the case of laminating the multilayer films of different materials, the Cr sputtering target may be a MoSi _X sputtering target.

  FIG. 10 shows another embodiment of the sputtering apparatus for manufacturing a mask blank according to the present invention. A plurality of sputtering cathodes arranged in the film forming chamber have a rectangular shape with long sides in the X-axis direction. A plurality of sputtering cathodes 7 are arranged side by side in the Y-axis direction. Similarly, each sputtering cathode 7 is equipped with a rectangular sputtering target 8. 10A shows the positional relationship of the plurality of sputtering cathodes 7 with respect to the large substrate S in the film formation chamber 2A, and FIG. 10B shows the relationship between the medium and small size substrates S in the film formation chamber 2A. The arrangement | positioning relationship of several sputtering cathode 7 ... is shown. In this embodiment, two parallel cathode unit transport rails 32, 32 arranged along the Y-axis direction at both ends of the rectangular sputtering cathode 7, and driving for driving the sputtering cathode 7. When the sputtering cathode driving motor is driven by a power source (not shown), the rectangular sputtering cathode 7 becomes the cathode. It moves on the unit transport rail 32 in the Y-axis direction (see FIG. 11).

  FIG. 12 also shows another embodiment of the sputtering apparatus for manufacturing a mask blank according to the present invention. Z-axis direction moving means capable of moving the sputtering cathode 7 in a direction perpendicular to the main surface of the substrate S is also shown. The structure provided is shown. The Z-axis direction moving means includes elevating means 50 for moving the sputtering cathode 7 in the vertical direction and angle adjusting means 51 for adjusting the angle of the sputtering cathode 7 with respect to the main surface of the substrate. FIG. 12 shows a state in which the angle is adjusted so that the two sputtering cathodes 7 on both sides are brought close to the substrate and directed toward the main surface of the substrate as an example.

  Each sputtering cathode 7 is provided with a Z-axis direction moving means that can move in a direction perpendicular to the main surface of the substrate, thereby improving the in-plane film thickness uniformity of the thin film formed on the main surface of the substrate. Since the distance between the sputtering target mounted on the sputtering cathode and the substrate can be controlled, it is possible to further improve the uniformity of the optical characteristics of the formed thin film. FIG. 12 shows a configuration in which each sputtering cathode 7 is provided with a Z-axis direction moving means. However, the present invention is not limited to this. For example, the cathodes that constitute a plurality of sputtering cathodes 7 arranged in the X-axis direction are shown in FIG. The unit 30 may include a Z-axis direction moving unit. Further, each of the sputtering cathode and the cathode unit may be configured to include Z-axis direction moving means.

  As described above, according to the sputtering apparatus according to the second embodiment of the present invention, the substrate is held so as to be disposed at a fixed position with respect to the sputtering target mounted on the sputtering cathode during film formation. Since the substrate holding means is provided, film formation is performed in a state where the substrate does not move with respect to the sputtering target in the film formation chamber and is stationary. In addition, the sputtering apparatus according to the present invention has a plurality of sputtering cathodes opposed to a substrate, and the plurality of sputtering cathodes are arranged according to a plurality of types of substrate sizes. By providing a sputtering cathode moving means for moving in a plane parallel to the surface, Thin films can be formed without the need to prepare sputtering targets of different sizes corresponding to several types of substrate sizes, so manufacturing costs can be reduced and thin films with good in-plane uniformity of optical properties can be formed. Can do.

[Second invention]
The present invention also provides a method for manufacturing a mask blank for a display device.
That is, a mask blank manufacturing method for a display device, characterized in that a thin film for forming a transfer pattern is formed on a translucent substrate using the above-described sputtering apparatus for manufacturing a mask blank of the present invention. .
According to the present invention, since it is possible to form a thin film without the need to prepare sputtering targets of different sizes corresponding to a plurality of types of substrate sizes, manufacturing costs can be reduced and in-plane uniformity of optical characteristics can be achieved. A good thin film can be formed. In addition, during film formation, since the substrate is not moved relative to the sputtering target so that the substrate and the sputtering target are in a fixed positional relationship, the film is formed in a stationary state. A mask blank can be obtained.

  Moreover, this invention is a manufacturing method of the mask blank for display apparatuses which forms the thin film for forming a transfer pattern on a translucent board | substrate, and manufactures a mask blank, Comprising: The said thin film is with respect to the said board | substrate. Are formed by sputtering with a sputtering gas so that the substrate and the sputtering target are in a certain positional relationship. The sputtering gas is supplied to the vicinity of the substrate surface through the plurality of sputtering targets, and is a method for manufacturing a mask blank for a display device.

  Since the sputtering gas is supplied in the vicinity of the substrate surface through a plurality of sputtering targets provided facing the substrate, the flow of the distribution of the sputtering gas supplied to the substrate surface does not occur. As a result, a mask blank having excellent in-plane optical characteristics can be obtained even for a large-sized substrate such as a mask blank for a display device. In addition, during film formation, since the substrate is not moved relative to the sputtering target so that the substrate and the sputtering target are in a fixed positional relationship, the film is formed in a stationary state. A mask blank can be obtained.

In the case of a mask blank for a display device, as the thin film, a light shielding film, a semi-transparent film, or a laminated film in which a semi-transparent film and a light shielding film are provided in this order is used. The light shielding film in this case includes a structure in which an antireflection layer is laminated on the light shielding layer.
That is, the present invention provides a display device binary mask blank in which a light shielding film is formed as a thin film for forming a transfer pattern on a translucent substrate, a display device phase shift mask blank in which a semi-transparent film is formed, It is suitable for manufacturing a photomask blank for a display device, a gradation mask blank for a display device in which a laminated film of a semi-transparent film and a light shielding film is formed in this order.
The binary mask blank is a two-tone mask having a light-shielding portion and a light-transmitting portion (the substrate is exposed) on a light-transmitting substrate, and exposure light used for pattern transfer in addition to the light-shielding portion and the light-transmitting portion. It is used for manufacturing a three-tone mask having a semi-transparent portion composed of a fine light-shielding pattern that is less than the resolution limit.

  Further, the phase shift mask blank has a desired phase difference (for example, 180 ° ± 20 °) necessary for improving the resolution of the pattern on the light-transmitting substrate and a desired transmittance (for example, 1%). It is used for manufacturing a phase shift mask having a semi-transparent portion having a characteristic of ˜20%.

  Moreover, the said photomask blank is used for manufacture of the photomask described in Japanese Unexamined Patent Publication No. 2011-75656, for example. This photomask transfers a predetermined transfer pattern including a line and space pattern to a resist film formed on a workpiece to be etched, and the resist film is used as a mask in the etching process. A photomask formed as a resist pattern, and a line pattern of a line-and-space pattern formed on a translucent substrate is provided by a semi-transparent portion, and a space pattern is provided by the translucent portion. It refers to the photomask that is. Even if the pitch width of the line and space pattern is reduced, the intensity of transmitted light irradiated to the resist film through the light transmitting portion is reduced in the semi-light transmitting portion in the photomask. It has the characteristic which has the transmittance | permeability (for example, 1%-30%) which can suppress.

In the above phase shift mask blank or photomask blank, a light-shielding film is formed on the semi-transparent film, and the phase-shift mask or photo having a semi-translucent part, a light-shielding part, and a translucent part on the translucent substrate. A mask can also be manufactured.
Further, the gradation mask blank has at least one semi-transparent portion made of a semi-transparent film that reduces the exposure light transmittance by a predetermined amount in addition to the light-shielding portion and the light-transmitting portion on the translucent substrate. It is used for the manufacture of multi-tone masks with gradation or higher.

  The translucent substrate for the mask blank is not particularly limited as long as it has transparency with respect to the exposure wavelength to be used. An ultra-high pressure mercury lamp is generally used as an exposure light source used in manufacturing a display device, and exposure wavelengths include multi-lines including i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm). There are cases of wavelength and i-line (wavelength 365 nm). In the present invention, a synthetic quartz substrate and other various glass substrates (for example, soda lime glass, aluminosilicate glass, etc.) can be used.

  In the case of a large mask blank for a display device, there are many types of substrate sizes from 330 mm × 450 mm for small sizes to 1220 mm × 1400 mm for large sizes or larger. The present invention is suitable for manufacturing a mask blank of a large substrate size having a side of 500 mm or more used as such a mask blank for a display device.

  As the material of the light shielding film used for the mask blank for a display device, transition metal alone or a compound thereof such as chromium, tantalum, ruthenium, tungsten, titanium, hafnium, molybdenum, nickel, vanadium, zirconium, niobium, palladium, rhodium or the like is used. The material containing it can be used. For example, a light-shielding film composed of chromium or a chromium compound in which one or more elements selected from elements such as oxygen, nitrogen, and carbon are added to chromium. Further, for example, a light shielding film composed of a tantalum compound in which one or more elements selected from elements such as oxygen, nitrogen, and boron are added to tantalum. There are a light-shielding film having a two-layer structure of a light-shielding layer and a front-surface antireflection layer, or a three-layer structure in which a back-surface antireflection layer is added between the light-shielding layer and the substrate. Moreover, it is good also as a composition gradient film | membrane from which the composition in the film thickness direction of a light shielding film differs continuously or in steps.

In addition, as the light-shielding film, a material containing a compound of transition metal and silicon (including transition metal silicide, particularly molybdenum silicide) can be used.
This light-shielding film is made of a material containing a compound of a transition metal and silicon, and examples thereof include a material mainly composed of these transition metal and silicon and oxygen and / or nitrogen. As the transition metal, molybdenum, tantalum, tungsten, titanium, hafnium, nickel, vanadium, zirconium, niobium, palladium, ruthenium, rhodium, chromium, or the like is applicable. In particular, when the light shielding film is formed of a molybdenum silicide compound, it has a two-layer structure of a light shielding layer (MoSi, etc.) and a surface antireflection layer (MoSiON, etc.), and the back surface antireflection between the light shielding layer and the substrate. There is a three-layer structure to which layers (MoSiON, etc.) are added.

In addition, as the material of the semi-transparent film used for the mask blank for a display device, a material containing a single metal such as chromium, tantalum, tungsten, titanium, molybdenum, silicon, zirconium, aluminum, or a compound thereof, a transition metal, A material containing a compound of silicon (including transition metal silicide, particularly molybdenum silicide) can be used.
This semi-transparent film is made of a material containing a compound of transition metal and silicon (including transition metal silicide), for example, and examples thereof include materials having these transition metal and silicon and oxygen and / or nitrogen as main components. . As the transition metal, molybdenum, tantalum, tungsten, titanium, hafnium, nickel, vanadium, zirconium, niobium, palladium, ruthenium, rhodium, chromium, or the like is applicable. In the case of compounds such as chromium, tantalum, tungsten, titanium, molybdenum, silicon, zirconium, and aluminum, a metal compound obtained by adding one or more elements selected from elements such as oxygen, nitrogen, carbon, and fluorine to these metals Is applicable. The composition ratio and film thickness of each element are adjusted so as to have a predetermined transmittance with respect to the exposure light.

In the case of a gradation mask blank, a phase shift mask blank, and a photomask blank having a light-shielding film on a semi-transparent film, when a material containing the transition metal and silicon is selected as the semi-transparent film material As a material for the light-shielding film, the light-shielding film may be composed of chromium having etching selectivity (having etching resistance), particularly chromium, or a chromium compound in which elements such as oxygen, nitrogen, and carbon are added to chromium. preferable. The composition and film thickness of the light shielding film material are adjusted so that a predetermined light shielding performance (optical density) is obtained in the laminated structure with the semi-transparent film.
Further, an etching stopper film having etching resistance with respect to the light shielding film or the semitransparent film may be provided between the semitransparent film and the light shielding film.

[Third invention]
The present invention also provides a method for manufacturing a mask for a display device.
That is, the present invention is a method for manufacturing a mask for a display device, wherein the thin film of the mask blank obtained by the method for manufacturing a mask blank for a display device according to the present invention is patterned to form a transfer pattern. is there. The thin film can be patterned using a lithography method.
By forming a transfer pattern by patterning the thin film using a mask blank having good defect quality and good in-plane optical property uniformity obtained by the method for manufacturing a mask blank for a display device according to the present invention. Therefore, it is possible to obtain a large-sized mask for a display device that satisfies the high quality required for the mask for a display device in recent years and has few pattern defects and good optical characteristics.

Hereinafter, the embodiment of the present invention will be described more specifically with reference to examples.
Example 1
The substrate to be used is a large synthetic quartz glass substrate (size 1220 mm × 1400 mm, thickness 13 mm).
The following light shielding film was formed on the glass substrate using the sputtering apparatus according to the present invention shown in FIGS.
In the sputtering apparatus according to the present invention,
・ A total of 59 sputtering cathodes are placed in the film forming chamber 2A. ・ Size of one sputtering cathode: Regular hexagon with a side of 125 mm ・ A 9-inch sputtering target (229 mmφ) is placed on each sputtering cathode (substrate main surface and sputtering) (Arranged so that the sputtering surface of the target is parallel)
・ Distance between sputtering target and substrate: 300 mm
It was.

Specifically, a chromium (Cr) target was used as a sputtering target to be attached to each sputtering cathode, and a light shielding film composed of an underlayer, a light shielding layer, and an antireflection layer was formed. First, a CrN layer (underlayer) having a thickness of 14 nm was formed using a mixed gas of argon (Ar) and nitrogen (N ₂ ) (gas flow ratio = 8: 2) as a sputtering gas. Subsequently, a mixed gas of argon (Ar) and methane (CH ₄ ) (gas flow ratio = 95: 5) was used as a sputtering gas to form a 61 nm thick CrC layer (light-shielding layer). Finally, a CrON layer (antireflection layer) having a film thickness of 25 nm is formed using a mixed gas of argon (Ar) and nitric oxide (NO) (gas flow ratio = 85: 15) as a sputtering gas, and the total film A chromium-based light shielding film having a three-layer structure having a thickness of 100 nm was formed.
Each sputtering gas was supplied to the vicinity of the substrate surface through the gaps between the plurality of sputtering cathodes in the film forming chamber. Further, the gas pressure during film formation and the power of the DC power source applied to each sputtering cathode were appropriately adjusted. This light-shielding film is adjusted so that the optical density (OD) is 3.2 in a wavelength region extending from at least i-line to g-line emitted from the ultrahigh pressure mercury lamp.

As described above, a binary mask blank for a display device was produced.
When the spectral reflectance of the obtained binary mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% at least in the wavelength region from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 2%. In addition, as a result of measuring the film surface reflectance in the same manner for the in-plane (equal 30 locations), the variation of the in-plane film surface reflectance is within ± 1.5%, It was confirmed that the optical properties of the light shielding film were uniform.

  Moreover, as a result of performing a defect inspection of the main surface of the mask blank using a defect inspection apparatus (manufactured by Pulse Tech) with a 600 nm sensitivity, the number of defects having a size of 600 nm or more was 70. It was confirmed that the binary mask blank obtained by this example had a good defect quality even if it was a large size.

Next, a display device mask was manufactured using the binary mask blank.
That is, a positive resist film for laser drawing was formed on the surface of the binary mask blank, and a desired pattern was drawn and developed on the resist film to form a predetermined resist pattern. Next, using the resist pattern as a mask, the light shielding film was etched by wet etching to form a transfer pattern.

  When a defect inspection was performed on the thus obtained display device binary mask using the defect inspection apparatus, no pattern defect was detected. That is, a mask for a display device is manufactured by using a mask blank having a good defect quality and good in-plane optical characteristics obtained by the present invention, which is required for a mask for a display device in recent years. It was confirmed that a large-sized mask for a display device with satisfactory pattern quality and few optical defects was obtained.

(Example 2)
The substrate to be used is a large synthetic quartz glass substrate (size 1220 mm × 1400 mm, thickness 13 mm).
The following MoSi semi-transparent film was formed on the glass substrate by using the sputtering apparatus according to the present invention shown in FIGS.
The semi-transparent film was formed in, for example, the film forming chamber 2B other than the film forming chamber 2A in which the light shielding film of Example 1 was formed. The configuration in the film forming chamber 2B was the same as that in the film forming chamber 2A in which the light shielding film of Example 1 was formed except that the sputtering target material to be used was different.

Specifically, a mixed target of molybdenum (Mo) and silicon (Si) (Mo: Si = 20 atomic%: 80 atomic%) is used as a sputtering target mounted on each sputtering cathode, and argon (Ar) is used as the sputtering gas. Then, a MoSi ₄ film (Mo: 20 atomic%, Si: 80 atomic%) having a thickness of 4.5 nm was formed. At this time, the film thickness was adjusted so that the transmittance in the wavelength region from at least the i-line to the g-line emitted from the ultra-high pressure mercury lamp as the exposure light source was 40%.
The sputtering gas was supplied to the vicinity of the substrate surface through the gaps between the plurality of sputtering cathodes in the film forming chamber. Further, the gas pressure during film formation and the power of the DC power source applied to each sputtering cathode were appropriately adjusted.

  When the spectral transmittance of the MoSi semi-transparent film formed on the substrate was measured with a spectrophotometer, the transmissivity of the semi-transparent film was measured at least in the wavelength range from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 4%. Moreover, as a result of measuring the transmissivity of the semi-transparent film in the same way (equal 30 locations), the in-plane transmissivity variation is within ± 1%, even for a large size substrate, It was confirmed that the optical property uniformity in the semi-translucent film was good.

  Moreover, as a result of performing the defect inspection of the MoSi semi-transparent film surface to the substrate on which the MoSi semi-transparent film is formed using a defect inspection apparatus having a sensitivity of 600 nm (manufactured by Pulstec), the size is 600 nm or more. The number of defects was less than 60, and it was confirmed that the defect quality was good.

Next, the following light shielding film was formed on the MoSi semi-transparent film in the film forming chamber 2A as in Example 1.
Specifically, a chromium (Cr) target was used as a sputtering target to be attached to each sputtering cathode, and a light shielding film composed of an underlayer, a light shielding layer, and an antireflection layer was formed. First, a CrN layer (underlayer) having a thickness of 14 nm was formed using a mixed gas of argon (Ar) and nitrogen (N ₂ ) (gas flow ratio = 8: 2) as a sputtering gas. Subsequently, a mixed gas of argon (Ar) and methane (CH ₄ ) (gas flow ratio = 95: 5) was used as a sputtering gas to form a 58 nm thick CrC layer (light-shielding layer). Finally, a CrON layer (antireflection layer) having a film thickness of 25 nm is formed using a mixed gas of argon (Ar) and nitric oxide (NO) (gas flow ratio = 85: 15) as a sputtering gas, and the total film A chromium-based light-shielding film having a three-layer structure having a thickness of 97 nm was formed.

  Note that the gas pressure during film formation and the power of the DC power source applied to each sputtering cathode were appropriately adjusted. This light-shielding film is adjusted to have an optical density (OD) of 3.2 in the wavelength region extending from at least the i-line to the g-line emitted from the ultra-high pressure mercury lamp in the laminated structure with the MoSi semi-transparent film. Yes.

As described above, a gradation mask blank for a display device having a structure in which a MoSi semi-transparent film and a Cr-based light-shielding film were laminated in this order on a glass substrate was produced.
When the spectral reflectance of the obtained gradation mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% in at least the wavelength region extending from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 2%. In addition, as a result of measuring the film surface reflectance in the same manner for the in-plane (equal 30 locations), the variation of the in-plane film surface reflectance is within ± 1.5%, It was confirmed that the optical properties of the light shielding film (antireflection layer) were uniform.

  Moreover, as a result of performing a defect inspection on the main surface of the mask blank using the 600 nm sensitivity defect inspection apparatus for the obtained gradation mask blank, the number of defects having a size of 600 nm or more is less than 85, It was confirmed that the gradation mask blank obtained in this example had good defect quality even if it was a large size.

Next, a gradation mask for a display device was manufactured using the gradation mask blank.
This will be described according to the manufacturing process shown in FIG.
First, a positive resist film 13 for laser drawing was formed on the gradation mask blank in which the semi-transparent film 11 and the light-shielding film 12 were formed on the glass substrate 10 (see FIG. 13A).

Next, a desired pattern is drawn on the resist film 13 formed on the mask blank by using a laser drawing apparatus and then developed to form a resist pattern 13a on a region to be a light shielding portion (see FIG. 13 (b)).
Next, using the resist pattern 13a as a mask, the light shielding film 12 was etched by wet etching to form the light shielding film pattern 12a (see FIG. 13C).
Note that the Cr-based light-shielding film and the MoSi semi-transparent film are resistant to each other's etching conditions.

  Next, the remaining resist pattern 13a is peeled off, and the same resist film as described above is formed again on the entire surface. Then, pattern drawing and development are performed, and a resist pattern 13b is formed on a region to be a semi-translucent portion (FIG. 13). (See (d)). Using the resist pattern 13b and the exposed light-shielding film pattern 12a as a mask, the semi-transparent film 11 on the translucent part region was removed by wet etching.

  The remaining resist pattern 13b was peeled off to obtain a display device gradation mask 20 (see FIG. 13E). The gradation mask 20 is formed on a glass substrate 10 with a light-shielding part 21 made of a laminated film of a semi-transparent film pattern 11a and a light-shielding film pattern 12a, a light-transmitting part 22 from which the glass substrate 10 is exposed, and a semi-transparent film. This is a three-tone mask on which a transfer pattern including the semi-transparent portion 23 made of the pattern 11a is formed.

  When a defect inspection was performed on the thus obtained display device gradation mask using the defect inspection apparatus, no pattern defect was detected. That is, a mask for a display device is manufactured by using a mask blank having a good defect quality and good in-plane optical characteristics obtained by the present invention, which is required for a mask for a display device in recent years. It was confirmed that a large-sized mask for a display device with satisfactory pattern quality and few optical defects was obtained.

(Example 3)
As shown in FIGS. 14A and 14B, the sputtering cathode and sputtering target in the sputtering apparatus of Example 1 described above are arranged with a total of 32 sputtering cathodes below the film forming chamber 2A. And the binary mask blank for display apparatuses was produced like the above-mentioned Example 1 except having used the sputtering device which provided the sputtering gas introduction tube between each sputtering cathode.
When the spectral reflectance of the obtained binary mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% at least in the wavelength region from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The variation range was less than 2%. Further, as a result of measuring the film surface reflectance in the same manner (equal 30 locations), the variation in the film surface reflectance within the surface is within ± 1.0%, and even with a large mask blank, It was confirmed that the optical properties of the light shielding film were uniform.

Compared with the sputtering apparatus described in Example 1, this is because the sputtering gas introduction tube and the turbo molecular pump are provided on the surface side where the thin film (light-shielding film) is formed on the main surface of the substrate. The sputtering gas introduced from the tube is not drawn by the turbo molecular pump while avoiding the substrate, and is drawn from between the sputtering cathodes, which is considered to be due to the uniform flow of the sputtering gas to the substrate.
Moreover, as a result of defect inspection of the main surface of the mask blank using a defect inspection apparatus (manufactured by Pulstec) with a sensitivity of 600 nm on the obtained binary mask blank, the number of defects having a size of 600 nm or more is 50. It was confirmed that the binary mask blank obtained by this example had a good defect quality even if it was a large size.

This is presumably because dust generated from the sputtering target is not deposited on the substrate because the substrate is disposed above the sputtering target.
Moreover, when a mask for a display device was produced using the binary mask blank obtained in the same manner as in Example 1, the pattern defect was not detected, and the high quality required for recent display device masks was achieved. It was confirmed that a large-sized mask for a display device with few pattern defects and good optical characteristics could be obtained.

(Comparative Example 1)
A binary mask blank for a display device was produced in the same manner as in Example 1 except that the light-shielding film was formed using a conventional inline-type sputtering apparatus instead of the sputtering apparatus according to the present invention.
The in-line type sputtering apparatus includes a plurality of sputtering cathodes and sputtering targets having the same size as the sputtering cathode and sputtering target used in the sputtering apparatus of the present invention used in Example 1 in the substrate width direction orthogonal to the substrate transport direction. The one arranged in the same manner as the in-line type sputtering apparatus in the prior art (Patent Literatures 1 and 2) was used. This light-shielding film is adjusted so that the optical density (OD) is 3.2 at least in the wavelength region from the i-line to the g-line emitted from the ultra-high pressure mercury lamp, as in the above-described embodiment. The film was a CrN layer (underlayer) with a thickness of 15 nm, a CrC layer (light-shielding layer) with a thickness of 65 nm, and a CrON layer (antireflection layer) with a thickness of 25 nm, and became a continuous composition gradient film with a total thickness of 105 nm. .
As can be seen by comparing with the film thickness of the light shielding film of Example 1 described above, the film thickness necessary for obtaining the same optical density (OD) of 3.2 should be larger in Comparative Example 1. However, this is considered to be caused by the fact that it is lower than the film density of the light shielding film of Example 1.

  Further, when the spectral reflectance of the obtained binary mask blank was measured with a spectral reflectance meter, the film surface reflectance was 10% on average in the wavelength region extending from at least the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. However, the fluctuation range was in the range of 2%. Further, as a result of measuring the film surface reflectance in the same manner (equal 30 locations), the variation in the film surface reflectance within the surface is as large as ± 5%, which is an optical characteristic required for a large-size mask blank. Uniformity cannot be obtained.

  Moreover, as a result of performing defect inspection on the main surface of the mask blank using the defect inspection apparatus with the sensitivity of 600 nm for the obtained binary mask blank, 120 or more defects having a size of 600 nm or more were detected, and a large size was obtained. The defect quality required for the size mask blank cannot be obtained.

Example 4
The substrate to be used is a large synthetic quartz glass substrate (size 1220 mm × 1400 mm, thickness 13 mm).
The following light-shielding film was formed on the glass substrate using the sputtering apparatus according to the present invention shown in FIGS. 1 and 6 to 9 described above. The sputtering apparatus used in the examples is the sputtering apparatus according to the second embodiment of the present invention described above. The X-axis direction is parallel to the short side of the substrate, and the Y-axis direction is the length of the substrate. A sputtering apparatus having a direction parallel to the side was used.
In the sputtering apparatus according to the present invention,
・ A total of 32 sputtering cathodes are placed in the deposition chamber 2A. ・ Size of one sputtering cathode: regular hexagon with a side of 125 mm. ・ Each sputtering cathode is placed so that the distance between adjacent sputtering cathodes is equal. Gap between each sputtering cathode: 140 mm
・ A 9-inch sputtering target (229 mmφ) is placed on each sputtering cathode (placed so that the substrate main surface and the sputtering target surface of the sputtering target are parallel)
・ Distance between sputtering target and substrate: 350 mm
It was.

Specifically, a chromium (Cr) target was used as a sputtering target to be attached to each sputtering cathode, and a light shielding film composed of an underlayer, a light shielding layer, and an antireflection layer was formed. First, a CrN layer (underlayer) having a thickness of 14 nm was formed using a mixed gas of argon (Ar) and nitrogen (N ₂ ) (gas flow ratio = 8: 2) as a sputtering gas. Subsequently, a mixed gas of argon (Ar) and methane (CH ₄ ) (gas flow ratio = 95: 5) was used as a sputtering gas to form a 61 nm thick CrC layer (light-shielding layer). Finally, a CrON layer (antireflection layer) having a film thickness of 25 nm is formed using a mixed gas of argon (Ar) and nitric oxide (NO) (gas flow ratio = 85: 15) as a sputtering gas, and the total film A chromium-based light shielding film having a three-layer structure having a thickness of 100 nm was formed.
Each sputtering gas was supplied to the vicinity of the substrate surface through the gaps between the plurality of sputtering cathodes in the film forming chamber. Further, the gas pressure during film formation and the power of the DC power source applied to each sputtering cathode were appropriately adjusted. This light-shielding film is adjusted so that the optical density (OD) is 3.2 in a wavelength region extending from at least i-line to g-line emitted from the ultrahigh pressure mercury lamp.

As described above, a binary mask blank for a display device was produced.
When the spectral reflectance of the obtained binary mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% at least in the wavelength region from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 2%. Moreover, as a result of measuring the film surface reflectance in the same manner (equal 30 locations), the variation in the film surface reflectance within the surface is within ± 1.2%, and even with a large mask blank, It was confirmed that the optical properties of the light shielding film were uniform.

  Moreover, as a result of defect inspection of the main surface of the mask blank using a defect inspection apparatus (manufactured by Pulstec) with a sensitivity of 600 nm on the obtained binary mask blank, the number of defects having a size of 600 nm or more is 60. It was confirmed that the binary mask blank obtained by this example had a good defect quality even if it was a large size.

Next, a display device mask was manufactured using the binary mask blank.
That is, a positive resist film for laser drawing was formed on the surface of the binary mask blank, and a desired pattern was drawn and developed on the resist film to form a predetermined resist pattern. Next, using the resist pattern as a mask, the light shielding film was etched by wet etching to form a transfer pattern.

  When a defect inspection was performed on the thus obtained display device binary mask using the defect inspection apparatus, no pattern defect was detected. That is, a mask for a display device is manufactured by using a mask blank having a good defect quality and good in-plane optical characteristics obtained by the present invention, which is required for a mask for a display device in recent years. It was confirmed that a large-sized mask for a display device with satisfactory pattern quality and few optical defects was obtained.

(Example 5)
The substrate to be used is a small and medium synthetic quartz glass substrate (size: 520 mm × 800 mm, thickness: 10 mm).
A binary mask blank for a display device was produced in the same manner as in Example 4 except that a gap was provided so that a sputtering gas was supplied from between the sputtering cathodes, and the distance between the sputtering target and the substrate was 300 mm. . When the spectral reflectance of the obtained binary mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% in the wavelength range from at least the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The variation range was less than 2%. In addition, as a result of measuring the film surface reflectance in the same manner (equal 30 locations), the variation in the film surface reflectance within the surface is within ± 0.8%. It was confirmed that the uniformity of the optical characteristics in the light shielding film was good.

  Moreover, as a result of performing defect inspection of the main surface of the mask blank using a defect inspection apparatus (manufactured by Pulse Tech Co., Ltd.) having a sensitivity of 600 nm on the obtained binary mask blank, the number of defects having a size of 600 nm or more is fifteen. It was confirmed that the binary mask blank obtained by this example had good defect quality even if it was a medium to small size. Moreover, when the mask for display apparatuses was created using the binary mask blank obtained similarly to the above-mentioned Example, the pattern defect was not detected. It has been confirmed that a display device mask of a small and medium size having few pattern defects and good optical characteristics can be obtained that satisfies the high quality required for a display device mask in recent years.

(Example 6)
The substrate to be used is a large synthetic quartz glass substrate (size 1220 mm × 1400 mm, thickness 13 mm).
On the glass substrate, the following light-shielding film was formed using the sputtering apparatus according to the present invention shown in FIG.
In the sputtering apparatus according to the present invention,
・ A total of four sputtering cathodes are arranged in the deposition chamber 2A. ・ A single sputtering cathode size: a rectangular shape of 300 mm × 1400 mm. ・ Each sputtering cathode is arranged so that the distances between adjacent sputtering cathodes are equal. A 250 mm x 1300 mm sputtering target is placed on each sputtering cathode (placed so that the substrate main surface and the sputtering target surface of the sputtering target are parallel)
・ Gap between each sputtering cathode: 133 mm
・ Distance between sputtering target and substrate: 400 mm
It was.
The film forming conditions were the same as in Example 4 to produce a binary mask blank for a display device.

  When the spectral reflectance of the obtained binary mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% at least in the wavelength region from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 2%. In addition, as a result of measuring the film surface reflectance in the same manner for the in-plane (equal 30 locations), the variation of the in-plane film surface reflectance is within ± 1.5%, It was confirmed that the optical properties of the light shielding film were uniform. Compared to Example 4, the variation in in-plane film surface reflectance is 0.3% larger because the rectangular target is a single target in the vertical direction (X-axis direction). This is probably because the film thickness cannot be adjusted.

  Moreover, as a result of performing a defect inspection of the main surface of the mask blank using a defect inspection apparatus (manufactured by Pulse Tech) with a 600 nm sensitivity, the number of defects having a size of 600 nm or more was 70. It was confirmed that the binary mask blank obtained by this example had a good defect quality even if it was a large size. Moreover, when the mask for display apparatuses was created using the binary mask blank obtained similarly to the above-mentioned Example, the pattern defect was not detected. It was confirmed that a large-sized mask for a display device with few pattern defects and good optical characteristics that satisfies the high quality required for a mask for a display device in recent years can be obtained.

(Example 7)
The substrate to be used is a large synthetic quartz glass substrate (size 1220 mm × 1400 mm, thickness 13 mm).
The following MoSi semi-transparent film was formed on the glass substrate using the sputtering apparatus according to the present invention shown in FIGS. 1 and 6 to 9 described above. The semi-transparent film was formed in, for example, the film forming chamber 2B other than the film forming chamber 2A in which the light shielding film of Example 4 was formed. The configuration in the film forming chamber 2B was the same as that in the film forming chamber 2A in which the light-shielding film of Example 4 was formed, except that the sputtering target material used was different.

Specifically, a mixed target of molybdenum (Mo) and silicon (Si) (Mo: Si = 20 atomic%: 80 atomic%) is used as a sputtering target mounted on each sputtering cathode, and argon (Ar) is used as the sputtering gas. Then, a MoSi ₄ film (Mo: 20 atomic%, Si: 80 atomic%) having a thickness of 4.5 nm was formed. At this time, the film thickness was adjusted so that the transmittance in the wavelength region from at least the i-line to the g-line emitted from the ultra-high pressure mercury lamp as the exposure light source was 40%. The sputtering gas was supplied to the vicinity of the substrate surface through the gaps between the plurality of sputtering cathodes in the film forming chamber. Further, the gas pressure during film formation and the power of the DC power source applied to each sputtering cathode were appropriately adjusted.

  When the spectral transmittance of the MoSi semi-transparent film formed on the substrate was measured with a spectrophotometer, the transmissivity of the semi-transparent film was measured at least in the wavelength range from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 4%. Further, as a result of measuring the transmissivity of the semi-transparent film in the same plane (equal 30 locations), the variation in the transmissivity within the plane is within ± 1.2%, which is a large size substrate. It was also confirmed that the uniformity of optical characteristics in the semi-transparent film was good.

  Moreover, as a result of performing the defect inspection of the MoSi semi-transparent film surface to the substrate on which the MoSi semi-transparent film is formed using a defect inspection apparatus having a sensitivity of 600 nm (manufactured by Pulstec), the size is 600 nm or more. The number of defects was less than 60, and it was confirmed that the defect quality was good.

Next, the following light shielding film was formed on the MoSi semi-transparent film in the film forming chamber 2A as in Example 4.
Specifically, a chromium (Cr) target was used as a sputtering target to be attached to each sputtering cathode, and a light shielding film composed of an underlayer, a light shielding layer, and an antireflection layer was formed. First, a CrN layer (underlayer) having a thickness of 14 nm was formed using a mixed gas of argon (Ar) and nitrogen (N ₂ ) (gas flow ratio = 8: 2) as a sputtering gas. Subsequently, a mixed gas of argon (Ar) and methane (CH ₄ ) (gas flow ratio = 95: 5) was used as a sputtering gas to form a 58 nm thick CrC layer (light-shielding layer). Finally, a CrON layer (antireflection layer) having a film thickness of 25 nm is formed using a mixed gas of argon (Ar) and nitric oxide (NO) (gas flow ratio = 85: 15) as a sputtering gas, and the total film A chromium-based light-shielding film having a three-layer structure having a thickness of 97 nm was formed.

  Note that the gas pressure during film formation and the power of the DC power source applied to each sputtering cathode were appropriately adjusted. This light-shielding film is adjusted to have an optical density (OD) of 3.2 in the wavelength region extending from at least the i-line to the g-line emitted from the ultra-high pressure mercury lamp in the laminated structure with the MoSi semi-transparent film. Yes.

  As described above, a gradation mask blank for a display device having a structure in which a MoSi semi-transparent film and a Cr-based light-shielding film were laminated in this order on a glass substrate was produced. When the spectral reflectance of the obtained gradation mask blank was measured with a spectral reflectance meter, the film surface reflectance was an average of 10% in at least the wavelength region extending from the i-line to the g-line emitted from the ultrahigh pressure mercury lamp. The fluctuation range was within a range of less than 2%. Moreover, as a result of measuring the film surface reflectance in the same way (equal 30 locations), the variation in the film surface reflectance within the surface is within ± 1.7%, and even with a large mask blank, It was confirmed that the optical properties of the light shielding film (antireflection layer) were uniform.

  Moreover, as a result of performing the defect inspection of the main surface of the mask blank using the defect inspection apparatus having the sensitivity of 600 nm for the obtained gradation mask blank, the number of defects having a size of 600 nm or more is less than 95, It was confirmed that the gradation mask blank obtained in this example had good defect quality even if it was a large size.

Next, using the gradation mask blank, a gradation mask for a display device was produced according to the manufacturing process shown in FIG.
When a defect inspection was performed on the obtained display device gradation mask using the defect inspection apparatus, no pattern defect was detected. That is, a mask for a display device is manufactured by using a mask blank having a good defect quality and good in-plane optical characteristics obtained by the present invention, which is required for a mask for a display device in recent years. It was confirmed that a large-sized mask for a display device with satisfactory pattern quality and few optical defects was obtained.

  In addition, although the shape of the sputtering cathode shown in the above-described embodiment has been described by taking a regular hexagon as an example, it is not limited to this, and a regular polygon such as a square or a regular octagon, or a rectangle, a rhombus, a trapezoid or the like It can also be square, circular, oval, etc. Further, the shape of the sputtering target is not limited to a circle, and may be a rectangle such as a square or a rectangle. Further, as in the above-described embodiments, the sizes of the sputtering cathodes and the sputtering targets can all be the same, but a plurality of sputtering cathodes and sputtering targets having different sizes can be used.

  In the above-described embodiment, a display device by reactive sputtering using a mixed gas of an inert gas (for example, argon gas) and an active gas (for example, nitrogen gas, methane gas, and nitrogen monoxide gas) as the sputtering gas. Although the mask blank manufacturing method and the mask blank manufacturing sputtering apparatus used therefor have been described, the present invention is not limited to this. Depending on the type of sputtering gas introduced into the mask blank manufacturing sputtering apparatus, the sputtering gas supply means may not be such that the sputtering gas passes between the plurality of sputtering cathodes and is supplied to the vicinity of the substrate surface. In that case, the following structure may be sufficient as the sputtering apparatus for mask blank manufacture of this invention.

(Configuration A) A sputtering apparatus for manufacturing a mask blank used when forming a thin film for forming a transfer pattern on a translucent substrate,
At least one deposition chamber, a plurality of sputtering cathodes disposed in the deposition chamber, and the plurality of sputtering cathodes are disposed opposite to each other, and the substrate is disposed at a fixed position during deposition. A substrate holding means for holding a sputtering gas supply means for supplying a sputtering gas into the film forming chamber,
Furthermore, a sputtering cathode moving means for moving the plurality of sputtering cathodes in a plane parallel to the substrate main surface on which the thin film of the translucent substrate is formed according to a plurality of types of substrate sizes is provided. A sputtering apparatus for manufacturing mask blanks.

  In the sputtering apparatus having the above configuration A, the substrate is moved by the substrate holding means for holding the substrate so that the substrate is arranged at a fixed position with respect to the sputtering target mounted on the sputtering cathode during film formation in the film formation chamber. Since film formation is performed in a stationary state without any dust generation, dust generation by the conventional substrate transfer means does not occur, so that defect quality can be improved. In addition, a sputtering cathode moving means for moving the plurality of sputtering cathodes in a plane parallel to the main surface of the substrate in accordance with a plurality of types of substrate sizes is provided while arranging a plurality of sputtering cathodes opposite to the substrate. By providing it, it is possible to form a thin film without the need to prepare sputtering targets of different sizes corresponding to a plurality of types of substrate sizes, so that the manufacturing cost can be reduced and the in-plane uniformity of optical characteristics can be reduced. A good thin film can be formed.

  In addition, the sputtering apparatus of the above-described configuration A can further have the configurations of the above configurations 7 to 11, and in that case, the effects based on the above configurations 7 to 11 can be achieved.

1 Transfer chamber 2A, 2B, 2C Deposition chamber 3A, 3B, 3C, 4 Open / close gate (gate valve)
5 Loading 6 Unloading 7 Sputtering cathode 75 Sputtering shield 8 Sputtering target 9 Sputtering gas supply means 91 Sputtering gas introduction pipe 95 Substrate support means 10 Substrate 11 Semi-transparent film 12 Light-shielding film 13 Resist film 20 Display device gradation mask 21 Light-shielding Part 22 Translucent part 23 Semi-transparent part

Claims (14)

A mask blank manufacturing sputtering apparatus for use in forming a thin film for forming a transfer pattern on a translucent substrate,
At least one deposition chamber;
A plurality of sputtering cathodes disposed in the deposition chamber;
A substrate holding means that is arranged opposite to the plurality of sputtering cathodes and holds the substrate so that the substrate is arranged at a fixed position during film formation;
Sputtering cathode moving means for moving the plurality of sputtering cathodes in a plane parallel to the substrate main surface on which the thin film of the light-transmitting substrate is formed according to a plurality of types of substrate sizes;
A sputtering gas supply means provided so that a sputtering gas passes between the plurality of sputtering cathodes and is supplied to the vicinity of the substrate surface;
A sputtering apparatus for producing a mask blank, comprising:   The said sputtering cathode is opposingly arranged so that the to-be-sputtered surface of the sputtering target attached to the said board | substrate main surface in which the said thin film is formed in the said sputtering cathode may become parallel. Sputtering apparatus for manufacturing mask blanks.   The sputtering apparatus for manufacturing a mask blank according to claim 1 or 2, wherein a number of the sputtering cathodes corresponding to a region including a plurality of substrate sizes are arranged.   The sputtering apparatus for manufacturing a mask blank according to any one of claims 1 to 3, further comprising power supply means capable of applying power independently to each of the plurality of sputtering cathodes.   The substrate holding means is disposed so as to be positioned below the sputtering cathode, and supports the substrate by contacting a plurality of locations on the back surface opposite to the main surface of the substrate on which the film is formed, depending on the size of the plurality of substrates. The sputtering apparatus for manufacturing a mask blank according to any one of claims 1 to 4, further comprising: a substrate supporting unit that performs the above and a lifting unit that lifts and lowers the substrate supporting unit. In the sputtering cathode, a plurality of cathode units constituting a sputtering cathode arranged in the X-axis direction are arranged in the Y-axis direction, and the sputtering cathode moving means includes a plurality of sputtering cathodes in the cathode unit. and the X-axis direction moving means for moving the cathode in the X-axis direction, any one of claims 1 to 5, characterized in that the cathode unit comprises a Y-axis direction moving means for moving the Y-axis direction, the A sputtering apparatus for producing a mask blank as described in 1. The mask blank according to claim 6 , wherein the sputtering cathode and / or the cathode unit includes a Z-axis direction moving unit that is movable in a direction perpendicular to a main surface of the translucent substrate. Sputtering device for manufacturing. The X-axis direction moving means is provided with transmission means for moving each sputtering cathode corresponding to the plurality of sputtering cathodes in the cathode unit, and the transmission means is supplied with power from the power supply means to the sputtering cathode. The mask blank manufacturing sputtering apparatus according to claim 6 , wherein conductive means for conducting electric power is provided. The substrate holding means is disposed so as to be located on the same side as the sputtering cathode, and is configured to contact a plurality of locations on the main surface of the substrate on which the film is formed and to support the substrate above the sputtering cathode. comprising a substrate supporting means being, the sputtering gas supply means, any one of claims 1 to 4, 6 to 8, characterized in that in opposition to the substrate main surface is disposed below the sputtering cathode A sputtering apparatus for manufacturing a mask blank according to one item. The substrate holding means is disposed on the same side as the sputtering cathode, and contacts a plurality of locations on the main surface of the substrate on which the film is formed in accordance with a plurality of substrate sizes, and above the sputtering cathode. 2. The substrate support means configured to support the substrate, wherein the sputtering gas supply means is disposed below the sputtering cathode so as to face the main surface of the substrate. The sputtering apparatus for mask blank manufacture as described in any one of 4, 6 thru | or 8 . Using the sputtering apparatus according to any one of claims 1 to 10, a method of manufacturing a display device for a mask blank, which comprises forming a thin film for forming a transfer pattern on a transparent substrate . A method of manufacturing a mask blank for a display device, in which a thin film for forming a transfer pattern is formed on a translucent substrate to manufacture a mask blank,
The thin film is formed by sputtering with a sputtering gas on a plurality of sputtering targets provided facing the substrate, and at the time of film formation , the plurality of sputtering cathodes are provided with a plurality of types of sputtering cathodes. Depending on the substrate size, the translucent substrate is moved in a plane parallel to the main surface of the substrate on which the thin film is formed, so that the substrate and the sputtering target are in a fixed positional relationship. And the sputtering gas passes between the plurality of sputtering targets and is supplied to the vicinity of the surface of the substrate. The thin, light-shielding film or HanToruHikarimaku or manufacturing a display device for a mask blank according to claim 11 or 12, characterized in that a laminated film in which a HanToruHikarimaku a light shielding film in this order Method. A method for manufacturing a mask for a display device, comprising: patterning the thin film of the mask blank obtained by the method for manufacturing a mask blank for a display device according to any one of claims 11 to 13 to form a transfer pattern. .

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