WO2008117494A1 - 記憶素子及び記憶装置 - Google Patents
記憶素子及び記憶装置 Download PDFInfo
- Publication number
- WO2008117494A1 WO2008117494A1 PCT/JP2007/073242 JP2007073242W WO2008117494A1 WO 2008117494 A1 WO2008117494 A1 WO 2008117494A1 JP 2007073242 W JP2007073242 W JP 2007073242W WO 2008117494 A1 WO2008117494 A1 WO 2008117494A1
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- WO
- WIPO (PCT)
- Prior art keywords
- electrodes
- elements
- current suppression
- storage
- application
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/33—Material including silicon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/532,552 US20100061142A1 (en) | 2007-03-22 | 2007-11-30 | Memory element and memory apparatus |
JP2009506194A JP5066565B2 (ja) | 2007-03-22 | 2007-11-30 | 記憶素子及び記憶装置 |
CN2007800522993A CN101636841B (zh) | 2007-03-22 | 2007-11-30 | 存储元件和存储装置 |
KR1020097021953A KR101151594B1 (ko) | 2007-03-22 | 2007-11-30 | 기억 소자 및 기억 장치 |
EP07832907A EP2128901A4 (en) | 2007-03-22 | 2007-11-30 | STORAGE ELEMENT AND STORAGE DEVICE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007074513 | 2007-03-22 | ||
JP2007-074513 | 2007-03-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008117494A1 true WO2008117494A1 (ja) | 2008-10-02 |
Family
ID=39788236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/073242 WO2008117494A1 (ja) | 2007-03-22 | 2007-11-30 | 記憶素子及び記憶装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100061142A1 (ja) |
EP (1) | EP2128901A4 (ja) |
JP (2) | JP5066565B2 (ja) |
KR (1) | KR101151594B1 (ja) |
CN (1) | CN101636841B (ja) |
WO (1) | WO2008117494A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009069690A1 (ja) * | 2007-11-29 | 2009-06-04 | Sony Corporation | メモリセル |
WO2010004675A1 (ja) * | 2008-07-11 | 2010-01-14 | パナソニック株式会社 | 電流抑制素子、記憶素子、及びこれらの製造方法 |
WO2010032470A1 (ja) * | 2008-09-19 | 2010-03-25 | パナソニック株式会社 | 電流抑制素子、記憶素子、記憶装置および電流抑制素子の製造方法 |
WO2010058569A1 (ja) * | 2008-11-19 | 2010-05-27 | パナソニック株式会社 | 不揮発性記憶素子および不揮発性記憶装置 |
JP2011090758A (ja) * | 2009-09-25 | 2011-05-06 | Sharp Corp | 不揮発性半導体記憶装置 |
JP4688979B2 (ja) * | 2009-07-13 | 2011-05-25 | パナソニック株式会社 | 抵抗変化型素子および抵抗変化型記憶装置 |
JP2013118035A (ja) * | 2011-12-05 | 2013-06-13 | Toshiba Corp | 半導体記憶装置 |
US8675387B2 (en) | 2009-07-28 | 2014-03-18 | Panasonic Corporation | Variable resistance nonvolatile memory device and programming method for same |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011114666A1 (ja) * | 2010-03-18 | 2011-09-22 | パナソニック株式会社 | 電流制御素子、記憶素子、記憶装置および電流制御素子の製造方法 |
US8766231B2 (en) | 2011-03-07 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Nanoscale electronic device with barrier layers |
US9196753B2 (en) * | 2011-04-19 | 2015-11-24 | Micron Technology, Inc. | Select devices including a semiconductive stack having a semiconductive material |
US8563366B2 (en) | 2012-02-28 | 2013-10-22 | Intermolecular Inc. | Memory device having an integrated two-terminal current limiting resistor |
WO2014148872A1 (ko) * | 2013-03-21 | 2014-09-25 | 한양대학교 산학협력단 | 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, 및 이들의 제조방법 |
US8981327B1 (en) | 2013-12-23 | 2015-03-17 | Intermolecular, Inc. | Carbon-doped silicon based selector element |
US8975610B1 (en) | 2013-12-23 | 2015-03-10 | Intermolecular, Inc. | Silicon based selector element |
US9391119B2 (en) * | 2014-06-20 | 2016-07-12 | GlobalFoundries, Inc. | Non-volatile random access memory devices with shared transistor configuration and methods of forming the same |
JP6273184B2 (ja) | 2014-09-03 | 2018-01-31 | 東芝メモリ株式会社 | 抵抗変化型記憶装置及びその製造方法 |
US9735360B2 (en) | 2015-12-22 | 2017-08-15 | Arm Ltd. | Access devices to correlated electron switch |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61174589A (ja) * | 1985-01-29 | 1986-08-06 | セイコーインスツルメンツ株式会社 | 液晶表示装置の製造方法 |
JPH03283469A (ja) * | 1990-03-30 | 1991-12-13 | Toshiba Corp | 液晶表示装置 |
JPH04253024A (ja) * | 1991-01-30 | 1992-09-08 | Seiko Instr Inc | 電気光学装置 |
US6753561B1 (en) * | 2002-08-02 | 2004-06-22 | Unity Semiconductor Corporation | Cross point memory array using multiple thin films |
JP2004319587A (ja) | 2003-04-11 | 2004-11-11 | Sharp Corp | メモリセル、メモリ装置及びメモリセル製造方法 |
JP2006203098A (ja) | 2005-01-24 | 2006-08-03 | Sharp Corp | 不揮発性半導体記憶装置 |
Family Cites Families (21)
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US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
JP2765967B2 (ja) * | 1989-07-26 | 1998-06-18 | 沖電気工業株式会社 | 半導体素子 |
JP2934677B2 (ja) * | 1990-02-01 | 1999-08-16 | セイコーインスツルメンツ株式会社 | 非線形抵抗素子の製造方法 |
GB9113795D0 (en) * | 1991-06-26 | 1991-08-14 | Philips Electronic Associated | Thin-film rom devices and their manufacture |
JP4225081B2 (ja) * | 2002-04-09 | 2009-02-18 | 株式会社村田製作所 | 電子部品の製造方法、電子部品及び弾性表面波フィルタ |
US6917539B2 (en) * | 2002-08-02 | 2005-07-12 | Unity Semiconductor Corporation | High-density NVRAM |
WO2004032196A2 (en) * | 2002-10-03 | 2004-04-15 | Pan Jit Americas, Inc. | Method of fabricating semiconductor by nitrogen doping of silicon film |
US6927074B2 (en) * | 2003-05-21 | 2005-08-09 | Sharp Laboratories Of America, Inc. | Asymmetric memory cell |
JP2005136115A (ja) * | 2003-10-30 | 2005-05-26 | Tdk Corp | 電子デバイス及びその製造方法 |
US20060063025A1 (en) * | 2004-04-07 | 2006-03-23 | Jing-Yi Huang | Method and system for making thin metal films |
CN1860609A (zh) * | 2004-07-22 | 2006-11-08 | 日本电信电话株式会社 | 双稳态电阻值获得器件、其制造方法、金属氧化物薄膜及其制造方法 |
US7646630B2 (en) * | 2004-11-08 | 2010-01-12 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
US20060219546A1 (en) * | 2005-03-31 | 2006-10-05 | Chia-Hong Jan | Concentration-graded alloy sputtering target |
US7812404B2 (en) * | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US20060250836A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | Rewriteable memory cell comprising a diode and a resistance-switching material |
US7446010B2 (en) * | 2005-07-18 | 2008-11-04 | Sharp Laboratories Of America, Inc. | Metal/semiconductor/metal (MSM) back-to-back Schottky diode |
JP3889023B2 (ja) * | 2005-08-05 | 2007-03-07 | シャープ株式会社 | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
KR101048199B1 (ko) * | 2006-11-20 | 2011-07-08 | 파나소닉 주식회사 | 비휘발성 반도체 기억 장치 및 그 제조 방법 |
JP4137994B2 (ja) * | 2006-11-20 | 2008-08-20 | 松下電器産業株式会社 | 不揮発性記憶素子、不揮発性記憶素子アレイおよびその製造方法 |
US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
JP4252624B2 (ja) * | 2007-06-01 | 2009-04-08 | パナソニック株式会社 | 抵抗変化型記憶装置 |
-
2007
- 2007-11-30 WO PCT/JP2007/073242 patent/WO2008117494A1/ja active Search and Examination
- 2007-11-30 KR KR1020097021953A patent/KR101151594B1/ko active IP Right Grant
- 2007-11-30 CN CN2007800522993A patent/CN101636841B/zh active Active
- 2007-11-30 US US12/532,552 patent/US20100061142A1/en not_active Abandoned
- 2007-11-30 JP JP2009506194A patent/JP5066565B2/ja active Active
- 2007-11-30 EP EP07832907A patent/EP2128901A4/en not_active Withdrawn
-
2012
- 2012-08-10 JP JP2012178318A patent/JP5524296B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61174589A (ja) * | 1985-01-29 | 1986-08-06 | セイコーインスツルメンツ株式会社 | 液晶表示装置の製造方法 |
JPH03283469A (ja) * | 1990-03-30 | 1991-12-13 | Toshiba Corp | 液晶表示装置 |
JPH04253024A (ja) * | 1991-01-30 | 1992-09-08 | Seiko Instr Inc | 電気光学装置 |
US6753561B1 (en) * | 2002-08-02 | 2004-06-22 | Unity Semiconductor Corporation | Cross point memory array using multiple thin films |
JP2004319587A (ja) | 2003-04-11 | 2004-11-11 | Sharp Corp | メモリセル、メモリ装置及びメモリセル製造方法 |
JP2006203098A (ja) | 2005-01-24 | 2006-08-03 | Sharp Corp | 不揮発性半導体記憶装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2128901A4 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009069690A1 (ja) * | 2007-11-29 | 2009-06-04 | Sony Corporation | メモリセル |
JP2009135206A (ja) * | 2007-11-29 | 2009-06-18 | Sony Corp | メモリセル |
US8295074B2 (en) | 2007-11-29 | 2012-10-23 | Sony Corporation | Memory cell |
WO2010004675A1 (ja) * | 2008-07-11 | 2010-01-14 | パナソニック株式会社 | 電流抑制素子、記憶素子、及びこれらの製造方法 |
US8422268B2 (en) | 2008-07-11 | 2013-04-16 | Panasonic Corporation | Current control element, memory element, and fabrication method thereof |
WO2010032470A1 (ja) * | 2008-09-19 | 2010-03-25 | パナソニック株式会社 | 電流抑制素子、記憶素子、記憶装置および電流抑制素子の製造方法 |
US8355274B2 (en) | 2008-09-19 | 2013-01-15 | Panasonic Corporation | Current steering element, storage element, storage device, and method for manufacturing current steering element |
JPWO2010058569A1 (ja) * | 2008-11-19 | 2012-04-19 | パナソニック株式会社 | 不揮発性記憶素子および不揮発性記憶装置 |
US8227788B2 (en) | 2008-11-19 | 2012-07-24 | Panasonic Corporation | Nonvolatile memory element, and nonvolatile memory device |
JP4531863B2 (ja) * | 2008-11-19 | 2010-08-25 | パナソニック株式会社 | 不揮発性記憶素子および不揮発性記憶装置 |
US8399875B1 (en) | 2008-11-19 | 2013-03-19 | Panasonic Corporation | Nonvolatile memory element, and nonvolatile memory device |
WO2010058569A1 (ja) * | 2008-11-19 | 2010-05-27 | パナソニック株式会社 | 不揮発性記憶素子および不揮発性記憶装置 |
JP4688979B2 (ja) * | 2009-07-13 | 2011-05-25 | パナソニック株式会社 | 抵抗変化型素子および抵抗変化型記憶装置 |
US8394669B2 (en) | 2009-07-13 | 2013-03-12 | Panasonic Corporation | Resistance variable element and resistance variable memory device |
US8675387B2 (en) | 2009-07-28 | 2014-03-18 | Panasonic Corporation | Variable resistance nonvolatile memory device and programming method for same |
JP2011090758A (ja) * | 2009-09-25 | 2011-05-06 | Sharp Corp | 不揮発性半導体記憶装置 |
JP2013118035A (ja) * | 2011-12-05 | 2013-06-13 | Toshiba Corp | 半導体記憶装置 |
US8908416B2 (en) | 2011-12-05 | 2014-12-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
CN101636841A (zh) | 2010-01-27 |
KR101151594B1 (ko) | 2012-05-31 |
US20100061142A1 (en) | 2010-03-11 |
JP2012253377A (ja) | 2012-12-20 |
EP2128901A4 (en) | 2013-01-09 |
JPWO2008117494A1 (ja) | 2010-07-15 |
KR20100008781A (ko) | 2010-01-26 |
CN101636841B (zh) | 2011-06-22 |
JP5524296B2 (ja) | 2014-06-18 |
JP5066565B2 (ja) | 2012-11-07 |
EP2128901A1 (en) | 2009-12-02 |
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