WO2008111336A1 - 磁気カプラ素子および磁気結合型アイソレータ - Google Patents

磁気カプラ素子および磁気結合型アイソレータ Download PDF

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Publication number
WO2008111336A1
WO2008111336A1 PCT/JP2008/051524 JP2008051524W WO2008111336A1 WO 2008111336 A1 WO2008111336 A1 WO 2008111336A1 JP 2008051524 W JP2008051524 W JP 2008051524W WO 2008111336 A1 WO2008111336 A1 WO 2008111336A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic field
magnetic
generation circuit
coupler element
field generation
Prior art date
Application number
PCT/JP2008/051524
Other languages
English (en)
French (fr)
Inventor
Masaaki Yamamoto
Yuichi Kariya
Katsuhisa Toshima
Nobukiyo Kobayashi
Takeshi Yano
Original Assignee
Omron Corporation
The Research Institute For Electric And Magnetic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corporation, The Research Institute For Electric And Magnetic Materials filed Critical Omron Corporation
Priority to EP08704271.9A priority Critical patent/EP2136420A4/en
Priority to US12/531,042 priority patent/US8400748B2/en
Priority to CN2008800081177A priority patent/CN101632183B/zh
Publication of WO2008111336A1 publication Critical patent/WO2008111336A1/ja

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive loop type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low frequency amplifiers, e.g. audio preamplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
    • H03F3/45968—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction
    • H03F3/45991—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using balancing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/003—Printed circuit coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/78—A comparator being used in a controlling circuit of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45538—Indexing scheme relating to differential amplifiers the IC comprising balancing means, e.g. trimming means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45561—Indexing scheme relating to differential amplifiers the IC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45576—Indexing scheme relating to differential amplifiers the IC comprising input impedance adapting or controlling means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45591—Indexing scheme relating to differential amplifiers the IC comprising one or more potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45621—Indexing scheme relating to differential amplifiers the IC comprising a transformer for phase splitting the input signal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

　入力電流に応じて磁界を発生させる励磁コイル７ａ，７ｂを含む磁界発生回路と、磁界発生回路で発生した磁界を印加することで抵抗値が変化する少なくとも１対の磁気抵抗効果素子９ａ，９ｂを含み、磁界発生回路が発生した磁界の強度に応じた電圧差を生じる２つの出力１２ａ，１２ｂを備える検出ブリッジ回路とを有する磁気カプラ素子２の、磁界発生回路および検出ブリッジ回路の幾何学形状を線対称または点対称にそれぞれ形成することで、高周波においても高いＳ／Ｎ比が得られる。
PCT/JP2008/051524 2007-03-12 2008-01-31 磁気カプラ素子および磁気結合型アイソレータ WO2008111336A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08704271.9A EP2136420A4 (en) 2007-03-12 2008-01-31 MAGNETIC COUPLER ELEMENT AND MAGNETIC COUPLING ISOLATOR
US12/531,042 US8400748B2 (en) 2007-03-12 2008-01-31 Magnetic coupler device and magnetically coupled isolator
CN2008800081177A CN101632183B (zh) 2007-03-12 2008-01-31 磁耦合元件以及磁耦合型隔离器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-062035 2007-03-12
JP2007062035A JP4194110B2 (ja) 2007-03-12 2007-03-12 磁気カプラ素子および磁気結合型アイソレータ

Publications (1)

Publication Number Publication Date
WO2008111336A1 true WO2008111336A1 (ja) 2008-09-18

Family

ID=39759279

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051524 WO2008111336A1 (ja) 2007-03-12 2008-01-31 磁気カプラ素子および磁気結合型アイソレータ

Country Status (5)

Country Link
US (1) US8400748B2 (ja)
EP (1) EP2136420A4 (ja)
JP (1) JP4194110B2 (ja)
CN (1) CN101632183B (ja)
WO (1) WO2008111336A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032825A1 (ja) * 2008-09-22 2010-03-25 アルプス電気株式会社 磁気結合型アイソレータ
WO2010032824A1 (ja) * 2008-09-22 2010-03-25 アルプス電気株式会社 磁気結合型アイソレータ
WO2010035873A1 (ja) * 2008-09-29 2010-04-01 オムロン株式会社 磁界検出素子および信号伝達素子

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WO2010137090A1 (ja) * 2009-05-28 2010-12-02 パナソニック株式会社 半導体装置
US9246486B2 (en) 2011-12-16 2016-01-26 Apple Inc. Electronic device with noise-cancelling force sensor
JP5865108B2 (ja) * 2012-02-16 2016-02-17 セイコーインスツル株式会社 磁気センサ装置
CN104603628B (zh) * 2012-08-31 2016-12-14 株式会社日立制作所 磁阻传感器、梯度仪
US9495899B2 (en) * 2013-09-25 2016-11-15 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods
TWI595518B (zh) 2015-11-04 2017-08-11 財團法人工業技術研究院 電隔離器構裝結構及電隔離器的製造方法
TWI573315B (zh) * 2016-01-19 2017-03-01 財團法人工業技術研究院 電隔離器電路
JP2019033159A (ja) * 2017-08-07 2019-02-28 Tdk株式会社 磁気抵抗効果デバイス及び高周波デバイス
JP7156839B2 (ja) * 2018-07-09 2022-10-19 アズビル株式会社 ２線式プロセス装置
US11522436B2 (en) 2019-10-15 2022-12-06 Darrell Schmidt Enterprises, Inc. Permanently magnetized enhanced generator
US11296588B2 (en) 2019-10-15 2022-04-05 Darrell Schmidt Enterprises, Inc. Magnetic coupler
TWI737529B (zh) * 2020-10-30 2021-08-21 精拓科技股份有限公司 數位隔離器
US11418026B1 (en) * 2021-03-22 2022-08-16 International Business Machines Corporation Electrostatic protection device

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JP2001135537A (ja) * 1999-11-05 2001-05-18 Honda Motor Co Ltd 電気信号伝達装置
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032825A1 (ja) * 2008-09-22 2010-03-25 アルプス電気株式会社 磁気結合型アイソレータ
WO2010032824A1 (ja) * 2008-09-22 2010-03-25 アルプス電気株式会社 磁気結合型アイソレータ
US8270127B2 (en) 2008-09-22 2012-09-18 Alps Green Devices Co., Ltd. Magnetic coupling-type isolator
JP5265689B2 (ja) * 2008-09-22 2013-08-14 アルプス・グリーンデバイス株式会社 磁気結合型アイソレータ
WO2010035873A1 (ja) * 2008-09-29 2010-04-01 オムロン株式会社 磁界検出素子および信号伝達素子
EP2343566A1 (en) * 2008-09-29 2011-07-13 Omron Corporation Magnetic field detection element and signal transmission element
EP2343566A4 (en) * 2008-09-29 2014-04-16 Omron Tateisi Electronics Co MAGNETIC FIELD DETECTION ELEMENT AND SIGNAL TRANSMISSION ELEMENT
US8963544B2 (en) 2008-09-29 2015-02-24 The Research Institute For Electric And Magnetic Materials Signal transmission device

Also Published As

Publication number Publication date
CN101632183B (zh) 2012-03-21
JP2008227081A (ja) 2008-09-25
CN101632183A (zh) 2010-01-20
JP4194110B2 (ja) 2008-12-10
US20100134944A1 (en) 2010-06-03
EP2136420A4 (en) 2015-11-04
US8400748B2 (en) 2013-03-19
EP2136420A1 (en) 2009-12-23

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