WO2008102005A3 - Vorrichtung zum bestimmen einer ladungsmenge auf einem kapazitiven element, pixelzelle und verfahren zum bestimmen einer position eines maximums einer hüllkurve eines analogen amplituden-modulierten signals. - Google Patents

Vorrichtung zum bestimmen einer ladungsmenge auf einem kapazitiven element, pixelzelle und verfahren zum bestimmen einer position eines maximums einer hüllkurve eines analogen amplituden-modulierten signals. Download PDF

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Publication number
WO2008102005A3
WO2008102005A3 PCT/EP2008/052185 EP2008052185W WO2008102005A3 WO 2008102005 A3 WO2008102005 A3 WO 2008102005A3 EP 2008052185 W EP2008052185 W EP 2008052185W WO 2008102005 A3 WO2008102005 A3 WO 2008102005A3
Authority
WO
WIPO (PCT)
Prior art keywords
determining
current
pixel cell
envelope
maximum
Prior art date
Application number
PCT/EP2008/052185
Other languages
English (en)
French (fr)
Other versions
WO2008102005A2 (de
Inventor
Jens Doege
Original Assignee
Jens Doege
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jens Doege filed Critical Jens Doege
Priority to JP2009550293A priority Critical patent/JP5337715B2/ja
Priority to KR1020117022543A priority patent/KR101222942B1/ko
Priority to US12/528,340 priority patent/US8669511B2/en
Priority to KR1020117022542A priority patent/KR101229906B1/ko
Priority to KR1020097020014A priority patent/KR101478594B1/ko
Publication of WO2008102005A2 publication Critical patent/WO2008102005A2/de
Publication of WO2008102005A3 publication Critical patent/WO2008102005A3/de
Priority to US15/332,536 priority patent/US10115760B2/en
Priority to US16/174,154 priority patent/US10553636B2/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • H03M1/46—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/04—Measuring peak values or amplitude or envelope of ac or of pulses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/124—Sampling or signal conditioning arrangements specially adapted for A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Image Processing (AREA)

Abstract

Es wird eine Pixelzelle (100; Pixel) beschrieben, mit einem Ausgang (102); einem Photosensor (110; Sensor), der ausgebildet ist, um abhängig von einer Strahlung in einem ersten Messzyklus (τc) einen ersten Messstrom (I DPh1) und in einem zweiten Messzyklus (τc) einen zweiten Messstrom (IDPh2) zu erzeugen; einem Ausgangsknoten (104); einer Stromspeichervorrichtung (120; SI-Mem), die so ausgebildet ist, dass in einem ersten Betriebsmodus ein Strom (IM1) durch die Stromspeichervorrichtung (120) abhängig von dem ersten Messstrom (IDPh1) einprägbar ist, und dass in einem zweiten Betriebsmodus die Stromspeichervorrichtung (120) ausgebildet ist, den eingeprägten Strom (IM1) zu halten, so dass der eingeprägte Strom an dem Ausgangsknoten (104) erfassbar ist; und einer Schalteinheit (130; IO), die ausgebildet ist, um in einem Auslesezyklus eine Differenz des eingeprägten Stroms (IM1) und des zweiten Messstroms (IDPh2) an dem Ausgangsknoten zu bilden und den Ausgangsknoten (104) mit dem Ausgang (102) zu koppeln.
PCT/EP2008/052185 2007-02-24 2008-02-22 Vorrichtung zum bestimmen einer ladungsmenge auf einem kapazitiven element, pixelzelle und verfahren zum bestimmen einer position eines maximums einer hüllkurve eines analogen amplituden-modulierten signals. WO2008102005A2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009550293A JP5337715B2 (ja) 2007-02-24 2008-02-22 ピクセルセル、ピクセルセルを駆動する方法、アナログ振幅変調信号の包絡線の最大の位置を決定する方法、電荷量を決定する装置、容量性要素の電荷量を決定する装置及び方法、回路ノードを所定の電圧に設定する装置及び方法、電荷ベースでアナログ／デジタル変換する装置及び方法、並びに電荷ベースで信号を処理する装置及び方法
KR1020117022543A KR101222942B1 (ko) 2007-02-24 2008-02-22 용량성 소자의 전하량을 결정하는 디바이스, 화소셀 및 아날로그 진폭변조 신호의 포락선의 최고 위치를 결정하는 방법
US12/528,340 US8669511B2 (en) 2007-02-24 2008-02-22 Device and method for determination of a charge amount on a capacitive element, and a device and method for setting a circuit node at a predetermined voltage
KR1020117022542A KR101229906B1 (ko) 2007-02-24 2008-02-22 용량성 소자의 전하량을 결정하는 디바이스, 화소셀 및 아날로그 진폭변조 신호의 포락선의 최고 위치를 결정하는 방법
KR1020097020014A KR101478594B1 (ko) 2007-02-24 2008-02-22 용량성 소자의 전하량을 결정하는 디바이스, 화소셀 및 아날로그 진폭변조 신호의 포락선의 최고 위치를 결정하는 방법
US15/332,536 US10115760B2 (en) 2007-02-24 2016-10-24 Pixel cell and its method for applying voltage generated in a photosensor to a gate capacitance and alternately resetting the applied voltage
US16/174,154 US10553636B2 (en) 2007-02-24 2018-10-29 Pixel cell and its method for applying voltage generated in a photosensor to a gate capacitance and alternately resetting the applied voltage

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102007009146 2007-02-24
DE102007009146.1 2007-02-24
DE102007030315.9 2007-06-29
DE102007030315 2007-06-29
DE102007036973.7 2007-08-06
DE102007036973A DE102007036973A1 (de) 2007-02-24 2007-08-06 Pixelzelle, Verfahren zum Betreiben einer Pixelzelle, Verfahren zum Bestimmen einer Position eines Maximums einer Hüllkurve eines analogen amplituden-modulierten Signals, Vorrichtung zum Bestimmen einer Ladungsmenge, Vorrichtung und Verfahren zum Bestimmen einer Ladungsmenge auf einem kapazitiven Element, Vorrichtung und Verfahren und Setzen eines Schaltungsknotens auf eine vorbestimmte Spannung, Vorrichtung und Verfahren zum ladungsbasierten analog-/digital-Wandeln und Vorrichtung und Verfahren zur ladungsbasierten Signalverarbeitung

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/528,340 A-371-Of-International US8669511B2 (en) 2007-02-24 2008-02-22 Device and method for determination of a charge amount on a capacitive element, and a device and method for setting a circuit node at a predetermined voltage
US14/140,033 Division US9478582B2 (en) 2007-02-24 2013-12-24 Pixel cell and its method for applying voltage generated in a photosensor to a gate capacitance and alternately resetting the applied voltage

Publications (2)

Publication Number Publication Date
WO2008102005A2 WO2008102005A2 (de) 2008-08-28
WO2008102005A3 true WO2008102005A3 (de) 2009-02-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/052185 WO2008102005A2 (de) 2007-02-24 2008-02-22 Vorrichtung zum bestimmen einer ladungsmenge auf einem kapazitiven element, pixelzelle und verfahren zum bestimmen einer position eines maximums einer hüllkurve eines analogen amplituden-modulierten signals.

Country Status (6)

Country Link
US (4) US8669511B2 (de)
JP (1) JP5337715B2 (de)
KR (3) KR101478594B1 (de)
DE (1) DE102007036973A1 (de)
ES (1) ES2631903T3 (de)
WO (1) WO2008102005A2 (de)

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