WO2008099630A1 - 連続成膜装置 - Google Patents

連続成膜装置 Download PDF

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Publication number
WO2008099630A1
WO2008099630A1 PCT/JP2008/050348 JP2008050348W WO2008099630A1 WO 2008099630 A1 WO2008099630 A1 WO 2008099630A1 JP 2008050348 W JP2008050348 W JP 2008050348W WO 2008099630 A1 WO2008099630 A1 WO 2008099630A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
forming apparatus
opposing space
continuous film
magnetic field
Prior art date
Application number
PCT/JP2008/050348
Other languages
English (en)
French (fr)
Inventor
Hiroshi Tamagaki
Original Assignee
Kabushiki Kaisha Kobe Seiko Sho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Kobe Seiko Sho filed Critical Kabushiki Kaisha Kobe Seiko Sho
Priority to KR1020097016778A priority Critical patent/KR101148760B1/ko
Priority to CN200880004886XA priority patent/CN101611168B/zh
Priority to EP08703212.4A priority patent/EP2119811B1/en
Priority to BRPI0806472-5A priority patent/BRPI0806472A2/pt
Priority to US12/525,832 priority patent/US8303714B2/en
Publication of WO2008099630A1 publication Critical patent/WO2008099630A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　巻き掛けられた基材Ｓが対向するように平行に対向して配置された一対の成膜ロール２，３と、前記各成膜ロール２，３の内部に設けられ、前記成膜ロールの間の対向空間５に面したロール表面付近にプラズマを収束させるように磁場を発生させる磁場発生部材１２，１３と、一方の電極と他方の電極とが交互に極性が反転するプラズマ電源１４と、前記対向空間５に成膜ガスを供給するガス供給管８及び前記対向空間を真空排気する真空排気手段を有する。前記プラズマ電源１４は、その一方の電極が一方の成膜ロール２に接続され、他方の電極が他方の成膜ロール３に接続される。
PCT/JP2008/050348 2007-02-13 2008-01-15 連続成膜装置 WO2008099630A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097016778A KR101148760B1 (ko) 2007-02-13 2008-01-15 플라즈마 cvd 장치
CN200880004886XA CN101611168B (zh) 2007-02-13 2008-01-15 连续成膜装置
EP08703212.4A EP2119811B1 (en) 2007-02-13 2008-01-15 Continuous film forming apparatus
BRPI0806472-5A BRPI0806472A2 (pt) 2007-02-13 2008-01-15 aparelho para formação contìnua de filme
US12/525,832 US8303714B2 (en) 2007-02-13 2008-01-15 Continuous film forming apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-031585 2007-02-13
JP2007031585A JP4268195B2 (ja) 2007-02-13 2007-02-13 プラズマｃｖｄ装置

Publications (1)

Publication Number Publication Date
WO2008099630A1 true WO2008099630A1 (ja) 2008-08-21

Family

ID=39689876

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050348 WO2008099630A1 (ja) 2007-02-13 2008-01-15 連続成膜装置

Country Status (8)

Country Link
US (1) US8303714B2 (ja)
EP (1) EP2119811B1 (ja)
JP (1) JP4268195B2 (ja)
KR (1) KR101148760B1 (ja)
CN (1) CN101611168B (ja)
BR (1) BRPI0806472A2 (ja)
RU (1) RU2417275C1 (ja)
WO (1) WO2008099630A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012081632A (ja) * 2010-10-08 2012-04-26 Sumitomo Chemical Co Ltd 積層フィルム
JP2012081631A (ja) * 2010-10-08 2012-04-26 Sumitomo Chemical Co Ltd 積層フィルム
EP2487277A4 (en) * 2009-10-05 2015-06-24 Kobe Steel Ltd PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION DEVICE

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240782B2 (ja) * 2009-05-18 2013-07-17 株式会社神戸製鋼所 連続成膜装置
JP5185909B2 (ja) * 2009-10-15 2013-04-17 株式会社神戸製鋼所 プラズマｃｖｄ装置
JP5460236B2 (ja) * 2009-10-22 2014-04-02 株式会社神戸製鋼所 Ｃｖｄ成膜装置
JP5322961B2 (ja) * 2010-01-21 2013-10-23 株式会社神戸製鋼所 プラズマｃｖｄ装置
CN101886253B (zh) * 2010-06-25 2013-09-11 合肥科烨电物理设备制造有限公司 潘宁放电离子源柔性材料真空镀膜机
JP5649510B2 (ja) * 2010-08-19 2015-01-07 キヤノンアネルバ株式会社 プラズマ処理装置，成膜方法，ｄｌｃ皮膜を有する金属板の製造方法，セパレータの製造方法
WO2012046778A1 (ja) * 2010-10-08 2012-04-12 住友化学株式会社 プラズマｃｖｄ成膜による積層体の製造方法
JP5641877B2 (ja) 2010-10-29 2014-12-17 株式会社神戸製鋼所 プラズマｃｖｄ装置
JP5649431B2 (ja) * 2010-12-16 2015-01-07 株式会社神戸製鋼所 プラズマｃｖｄ装置
CN103354844B (zh) * 2011-01-06 2016-01-13 零件喷涂公司 溅射装置
JP5694023B2 (ja) * 2011-03-23 2015-04-01 小島プレス工業株式会社 積層構造体の製造装置
CN103649370B (zh) * 2011-07-06 2016-03-23 株式会社神户制钢所 真空成膜装置
KR20140078761A (ko) 2011-11-22 2014-06-25 가부시키가이샤 고베 세이코쇼 플라즈마 발생원 및 이것을 구비한 진공 플라즈마 처리 장치
JP5828770B2 (ja) 2012-01-24 2015-12-09 株式会社神戸製鋼所 真空成膜装置
KR101557341B1 (ko) * 2012-09-26 2015-10-06 (주)비엠씨 플라즈마 화학 기상 증착 장치
WO2014088302A1 (ko) * 2012-12-06 2014-06-12 (주) 에스엔텍 플라즈마 화학기상 장치
KR101521606B1 (ko) * 2012-12-17 2015-05-19 (주)에스엔텍 플라즈마 화학기상 장치
JPWO2014109250A1 (ja) * 2013-01-08 2017-01-19 コニカミノルタ株式会社 機能性フィルムの製造方法、機能性フィルム製造装置、および機能性フィルムを備える有機エレクトロルミネッセンス素子
KR101444856B1 (ko) * 2013-01-22 2014-09-26 (주)에스엔텍 플라즈마 식각 장치
DK177766B3 (da) * 2013-03-19 2018-04-30 Tresu As Enhed og fremgangsmåde til koronabehandling
KR101538408B1 (ko) * 2013-06-28 2015-07-22 (주)에스엔텍 플라즈마 화학기상 장치
WO2014208943A1 (ko) * 2013-06-28 2014-12-31 (주) 에스엔텍 플라즈마 화학기상 장치
JP6341207B2 (ja) * 2013-08-21 2018-06-13 コニカミノルタ株式会社 ガスバリアーフィルムの製造装置
CN103643221B (zh) * 2013-09-14 2015-10-28 北京印刷学院 具有磁场增强旋转阵列电极的等离子体装置
JP5777688B2 (ja) * 2013-11-25 2015-09-09 株式会社神戸製鋼所 Ｃｖｄ成膜装置
JP2014037637A (ja) * 2013-11-25 2014-02-27 Kobe Steel Ltd Ｃｖｄ成膜装置
GB2562128B (en) * 2017-09-29 2020-08-05 Camvac Ltd Apparatus and Method for Processing, Coating or Curing a Substrate
RU2762700C1 (ru) * 2020-12-18 2021-12-22 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук Cvd - реактор рулонного типа
WO2023157553A1 (ja) * 2022-02-16 2023-08-24 日東電工株式会社 プラズマｃｖｄ装置および膜の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112489A (en) * 1975-03-03 1976-10-04 Airco Inc Process and apparatus for coating substrate
JP2587507B2 (ja) 1989-12-13 1997-03-05 松下電器産業株式会社 薄膜製造装置
JP2003049273A (ja) * 2001-08-08 2003-02-21 Kobe Steel Ltd プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
JP2005504880A (ja) 2001-04-20 2005-02-17 アプライド・プロセス・テクノロジーズ ペニング放電プラズマ源
JP2006501367A (ja) * 2002-10-03 2006-01-12 テトゥラ・ラバル・ホールディングス・アンド・ファイナンス・ソシエテ・アノニム プラズマ強化プロセスを実行するための装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3521318A1 (de) * 1985-06-14 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung
US7294283B2 (en) * 2001-04-20 2007-11-13 Applied Process Technologies, Inc. Penning discharge plasma source
US7023128B2 (en) * 2001-04-20 2006-04-04 Applied Process Technologies, Inc. Dipole ion source
JP5270505B2 (ja) * 2009-10-05 2013-08-21 株式会社神戸製鋼所 プラズマｃｖｄ装置
JP5460236B2 (ja) * 2009-10-22 2014-04-02 株式会社神戸製鋼所 Ｃｖｄ成膜装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112489A (en) * 1975-03-03 1976-10-04 Airco Inc Process and apparatus for coating substrate
JP2587507B2 (ja) 1989-12-13 1997-03-05 松下電器産業株式会社 薄膜製造装置
JP2005504880A (ja) 2001-04-20 2005-02-17 アプライド・プロセス・テクノロジーズ ペニング放電プラズマ源
JP2003049273A (ja) * 2001-08-08 2003-02-21 Kobe Steel Ltd プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
JP2006501367A (ja) * 2002-10-03 2006-01-12 テトゥラ・ラバル・ホールディングス・アンド・ファイナンス・ソシエテ・アノニム プラズマ強化プロセスを実行するための装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2119811A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2487277A4 (en) * 2009-10-05 2015-06-24 Kobe Steel Ltd PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION DEVICE
US9133547B2 (en) 2009-10-05 2015-09-15 Kobe Steel, Ltd. Plasma CVD apparatus
JP2012081632A (ja) * 2010-10-08 2012-04-26 Sumitomo Chemical Co Ltd 積層フィルム
JP2012081631A (ja) * 2010-10-08 2012-04-26 Sumitomo Chemical Co Ltd 積層フィルム

Also Published As

Publication number Publication date
BRPI0806472A2 (pt) 2011-09-27
KR20090107057A (ko) 2009-10-12
US8303714B2 (en) 2012-11-06
EP2119811B1 (en) 2015-09-02
US20100313810A1 (en) 2010-12-16
RU2417275C1 (ru) 2011-04-27
KR101148760B1 (ko) 2012-05-24
EP2119811A4 (en) 2014-05-07
CN101611168A (zh) 2009-12-23
JP4268195B2 (ja) 2009-05-27
JP2008196001A (ja) 2008-08-28
CN101611168B (zh) 2013-10-30
EP2119811A1 (en) 2009-11-18

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