WO2009050958A1 - 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法 - Google Patents

高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法 Download PDF

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Publication number
WO2009050958A1
WO2009050958A1 PCT/JP2008/066171 JP2008066171W WO2009050958A1 WO 2009050958 A1 WO2009050958 A1 WO 2009050958A1 JP 2008066171 W JP2008066171 W JP 2008066171W WO 2009050958 A1 WO2009050958 A1 WO 2009050958A1
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Prior art keywords
plasma cvd
power
high frequency
feed points
frequency plasma
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PCT/JP2008/066171
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English (en)
French (fr)
Inventor
Masayoshi Murata
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Masayoshi Murata
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Publication date
Application filed by Masayoshi Murata filed Critical Masayoshi Murata
Priority to US12/734,163 priority Critical patent/US20100239757A1/en
Priority to CN2008801207331A priority patent/CN101897005A/zh
Priority to EP08839658A priority patent/EP2237310A1/en
Publication of WO2009050958A1 publication Critical patent/WO2009050958A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

　タンデム型薄膜シリコン太陽電池の製造用のＶＨＦプラズマＣＶＤ装置を構成するプラズマ発生源に関し、定在波の影響及び一対の電極間以外に発生の有害プラズマの発生を抑制し、且つ、供給電力の該一対の電極間以外での消費を抑制可能な大面積・均一のＶＨＦプラズマＣＶＤ装置及びその方法を提供することを目的とする。 　電極上の互いに対向する位置に配置された第１及び第２の給電点間の距離を使用電力の波長の二分の一の整数倍に設定し、２台のパルス変調可能な位相可変２出力の高周波電源から出力される時間的に分離されたパルス電力を供給することにより、腹の位置が該第１及び第２の給電点の位置に合致した第１の定在波と、節の位置が該第１及び第２の給電点の位置に合致した第２の定在波とを時間的に交互に発生させる構成を有することを特徴とするプラズマＣＶＤ装置及びその方法。
PCT/JP2008/066171 2007-10-17 2008-09-08 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法 WO2009050958A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/734,163 US20100239757A1 (en) 2007-10-17 2008-09-08 High frequency plasma cvd apparatus, high frequency plasma cvd method and semiconductor thin film manufacturing method
CN2008801207331A CN101897005A (zh) 2007-10-17 2008-09-08 高频等离子cvd装置与高频等离子cvd法以及半导体薄膜制造法
EP08839658A EP2237310A1 (en) 2007-10-17 2008-09-08 High frequency plasma cvd apparatus, high frequency plasma cvd method and semiconductor thin film manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-269853 2007-10-17
JP2007269853A JP2008047938A (ja) 2007-10-17 2007-10-17 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

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Publication Number Publication Date
WO2009050958A1 true WO2009050958A1 (ja) 2009-04-23

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PCT/JP2008/066171 WO2009050958A1 (ja) 2007-10-17 2008-09-08 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法

Country Status (6)

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US (1) US20100239757A1 (ja)
EP (1) EP2237310A1 (ja)
JP (1) JP2008047938A (ja)
CN (1) CN101897005A (ja)
TW (1) TW200929338A (ja)
WO (1) WO2009050958A1 (ja)

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WO2011153674A1 (zh) * 2010-06-11 2011-12-15 深圳市创益科技发展有限公司 一种硅基薄膜太阳能电池的沉积盒
CN103098559A (zh) * 2010-09-15 2013-05-08 三菱电机株式会社 高频电力供给装置、等离子体处理装置以及薄膜制造方法
KR101337180B1 (ko) 2010-06-11 2013-12-05 션젼 트로니 사이언스 ＆ 테크놀로지 디벨롭먼트 컴퍼니 리미티드 박막 태양 전지를 증착하기 위한 클램프 유닛 및 신호 공급 방법
KR101337011B1 (ko) 2010-06-11 2013-12-05 션젼 트로니 사이언스 ＆ 테크놀로지 디벨롭먼트 컴퍼니 리미티드 실리콘 기반 박막 태양 전지용 가동 지그

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JP2008300873A (ja) * 2008-08-26 2008-12-11 Masayoshi Murata プラズマ表面処理方法及びプラズマ表面処理装置
DE102009014414A1 (de) 2008-10-29 2010-05-12 Leybold Optics Gmbh VHF-Elektrodenanordnung, Vorrichtung und Verfahren
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EP2816586A1 (en) * 2013-06-17 2014-12-24 Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan Large-area plasma generating apparatus
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TWI788390B (zh) 2017-08-10 2023-01-01 美商應用材料股份有限公司 用於電漿處理的分佈式電極陣列
JP6728502B2 (ja) * 2017-09-06 2020-07-22 東芝三菱電機産業システム株式会社 活性ガス生成装置
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JP7210094B2 (ja) * 2017-11-16 2023-01-23 東京エレクトロン株式会社 信号変調同期式プラズマ処理システム
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US10952289B2 (en) 2018-09-10 2021-03-16 Nxp Usa, Inc. Defrosting apparatus with mass estimation and methods of operation thereof
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CN111218674B (zh) * 2020-03-09 2024-09-17 龙鳞(深圳)新材料科技有限公司 Pecvd射频馈入电极系统及pecvd装置

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011153674A1 (zh) * 2010-06-11 2011-12-15 深圳市创益科技发展有限公司 一种硅基薄膜太阳能电池的沉积盒
KR101337180B1 (ko) 2010-06-11 2013-12-05 션젼 트로니 사이언스 ＆ 테크놀로지 디벨롭먼트 컴퍼니 리미티드 박막 태양 전지를 증착하기 위한 클램프 유닛 및 신호 공급 방법
KR101337026B1 (ko) 2010-06-11 2013-12-05 션젼 트로니 사이언스 ＆ 테크놀로지 디벨롭먼트 컴퍼니 리미티드 실리콘 기반 박막 태양 전지용 증착 박스
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CN103098559A (zh) * 2010-09-15 2013-05-08 三菱电机株式会社 高频电力供给装置、等离子体处理装置以及薄膜制造方法

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EP2237310A1 (en) 2010-10-06
TW200929338A (en) 2009-07-01
JP2008047938A (ja) 2008-02-28
CN101897005A (zh) 2010-11-24
US20100239757A1 (en) 2010-09-23

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