WO2008096483A1 - アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法 - Google Patents

アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法 Download PDF

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Publication number
WO2008096483A1
WO2008096483A1 PCT/JP2007/070987 JP2007070987W WO2008096483A1 WO 2008096483 A1 WO2008096483 A1 WO 2008096483A1 JP 2007070987 W JP2007070987 W JP 2007070987W WO 2008096483 A1 WO2008096483 A1 WO 2008096483A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
active matrix
matrix substrate
crystal display
crystal panel
Prior art date
Application number
PCT/JP2007/070987
Other languages
English (en)
French (fr)
Inventor
Kenji Enda
Ikumi Itsumi
Toshihide Tsubata
Masanori Takeuchi
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to CN2007800509359A priority Critical patent/CN101600991B/zh
Priority to EP20070830721 priority patent/EP2120089B1/en
Priority to US12/525,764 priority patent/US8319906B2/en
Priority to JP2008556998A priority patent/JP4851545B2/ja
Publication of WO2008096483A1 publication Critical patent/WO2008096483A1/ja

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/13624Active matrix addressed cells having more than one switching element per pixel
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136259Repairing; Defects
    • G02F1/136263Line defects
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50Protective arrangements
    • G02F2201/506Repairing, e.g. with redundant arrangement against defective part
    • G02F2201/508Pseudo repairing, e.g. a defective part is brought into a condition in which it does not disturb the functioning of the device

Abstract

 走査信号線(16)は、画素領域外からデータ信号線(15)の下を通って画素領域内に至る開口部(29)と、該開口部の両側部分であり、該開口部を介して列方向に向かい合う第1および第2走査電極部(16a・16b)とを有しており、第1走査電極部(16a)の端部のうち画素領域内にある方を第1の端部(EP1)、第2走査電極部(16b)の端部のうち画素領域内にある方を第2の端部(EP2)として、第1のトランジスタのソース電極(9a)およびドレイン電極(8a)はそれぞれ、画素領域内において上記第1走査電極部(16a)に重なるが第1の端部(EP1)には重ならず、第2のトランジスタのソース電極(9b)およびドレイン電極(8b)はそれぞれ、画素領域内において上記第2走査電極部(16b)に重なるが第2の端部(EP2)には重ならない。上記構成によれば、データ信号線(15)および走査信号線(16)の短絡を容易に修正することができる画素分割方式のアクティブマトリクス基板を実現することができる。
PCT/JP2007/070987 2007-02-09 2007-10-29 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法 WO2008096483A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2007800509359A CN101600991B (zh) 2007-02-09 2007-10-29 有源矩阵基板和液晶面板及其制造方法、液晶显示单元、液晶显示装置
EP20070830721 EP2120089B1 (en) 2007-02-09 2007-10-29 Active matrix substrate and liquid crystal panel, liquid crystal display unit, liquid crystal display device and television receiver comprising the same
US12/525,764 US8319906B2 (en) 2007-02-09 2007-10-29 Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, active matrix substrate manufacturing method, and liquid crystal panel manufacturing method
JP2008556998A JP4851545B2 (ja) 2007-02-09 2007-10-29 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007031238 2007-02-09
JP2007-031238 2007-02-09
JP2007-171276 2007-06-28
JP2007171276 2007-06-28

Publications (1)

Publication Number Publication Date
WO2008096483A1 true WO2008096483A1 (ja) 2008-08-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/070987 WO2008096483A1 (ja) 2007-02-09 2007-10-29 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法

Country Status (5)

Country Link
US (1) US8319906B2 (ja)
EP (1) EP2120089B1 (ja)
JP (1) JP4851545B2 (ja)
CN (1) CN101600991B (ja)
WO (1) WO2008096483A1 (ja)

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WO2011046012A1 (ja) * 2009-10-13 2011-04-21 シャープ株式会社 トランジスタ評価装置の製造方法およびトランジスタ評価装置
JP2012113090A (ja) * 2010-11-24 2012-06-14 Hitachi Displays Ltd 液晶表示装置およびその製造方法
KR20120069566A (ko) * 2010-12-20 2012-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20120070321A (ko) * 2010-12-21 2012-06-29 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
US8698703B2 (en) 2008-03-27 2014-04-15 Epson Imaging Devices Corporation Electro-optical device having parallax barrier system
KR20140118010A (ko) * 2013-03-27 2014-10-08 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
KR20140138472A (ko) * 2013-05-24 2014-12-04 엘지디스플레이 주식회사 액정 디스플레이 장치와 이의 제조방법
JPWO2014042074A1 (ja) * 2012-09-13 2016-08-18 シャープ株式会社 液晶表示装置
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KR101060472B1 (ko) * 2007-11-30 2011-08-29 엘지디스플레이 주식회사 액정표시패널의 불량셀 리페어방법
KR101427584B1 (ko) * 2008-01-22 2014-08-08 삼성디스플레이 주식회사 표시 장치
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CN102043284B (zh) * 2011-01-25 2012-06-13 信利半导体有限公司 一种实现高精细显示的液晶显示器
WO2013061556A1 (ja) * 2011-10-27 2013-05-02 シャープ株式会社 液晶表示パネル及びその製造方法
JP2015090435A (ja) * 2013-11-06 2015-05-11 株式会社ジャパンディスプレイ 液晶表示装置
CN104460149B (zh) * 2014-12-03 2017-09-15 深圳市华星光电技术有限公司 一种阵列基板、显示装置
CN105572994A (zh) * 2016-01-27 2016-05-11 深圳市华星光电技术有限公司 阵列基板及液晶显示屏及终端设备
KR102509111B1 (ko) * 2018-05-17 2023-03-13 삼성디스플레이 주식회사 표시 장치
CN111443536A (zh) * 2020-05-14 2020-07-24 成都中电熊猫显示科技有限公司 阵列基板、驱动方法以及液晶显示面板
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JPWO2009001578A1 (ja) * 2007-06-28 2010-08-26 シャープ株式会社 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、液晶パネルの製造方法
JP5064500B2 (ja) * 2007-06-28 2012-10-31 シャープ株式会社 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機
US8698703B2 (en) 2008-03-27 2014-04-15 Epson Imaging Devices Corporation Electro-optical device having parallax barrier system
US9495902B2 (en) 2008-03-27 2016-11-15 Epson Imaging Devices Corporation Electro-optical device having a plurality of subpixel electrodes within a single display element
US8698704B2 (en) 2008-03-27 2014-04-15 Epson Imaging Devices Corporation Electro-optical device having parallax barrier system
WO2011046012A1 (ja) * 2009-10-13 2011-04-21 シャープ株式会社 トランジスタ評価装置の製造方法およびトランジスタ評価装置
JP2012113090A (ja) * 2010-11-24 2012-06-14 Hitachi Displays Ltd 液晶表示装置およびその製造方法
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KR20220061064A (ko) * 2010-12-20 2022-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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JP2016106246A (ja) * 2010-12-20 2016-06-16 株式会社半導体エネルギー研究所 表示装置
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US9568794B2 (en) 2010-12-20 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2017072852A (ja) * 2010-12-20 2017-04-13 株式会社半導体エネルギー研究所 表示装置
US9645463B2 (en) 2010-12-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US9885932B2 (en) 2010-12-20 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2018022165A (ja) * 2010-12-20 2018-02-08 株式会社半導体エネルギー研究所 半導体装置
US11181793B2 (en) 2010-12-20 2021-11-23 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2018194865A (ja) * 2010-12-20 2018-12-06 株式会社半導体エネルギー研究所 半導体装置
KR20190045898A (ko) * 2010-12-20 2019-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102013734B1 (ko) * 2010-12-20 2019-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US11754896B2 (en) 2010-12-20 2023-09-12 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2012145927A (ja) * 2010-12-20 2012-08-02 Semiconductor Energy Lab Co Ltd 表示装置
JP2021047413A (ja) * 2010-12-20 2021-03-25 株式会社半導体エネルギー研究所 液晶表示装置
US10564499B2 (en) 2010-12-20 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20200034991A (ko) * 2010-12-20 2020-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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US8319906B2 (en) 2012-11-27
CN101600991B (zh) 2011-08-10
EP2120089A1 (en) 2009-11-18
EP2120089A4 (en) 2010-05-05
JPWO2008096483A1 (ja) 2010-05-20
JP4851545B2 (ja) 2012-01-11
CN101600991A (zh) 2009-12-09
EP2120089A8 (en) 2010-01-20

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